KR101622182B1 - Method of fabricating oxide thin film transistor - Google Patents

Abstract

A method of manufacturing an oxide thin film transistor according to the present invention is a thin film transistor using an amorphous zinc oxide (ZnO) based semiconductor as an active layer, wherein a protective film is formed of a double layer of an inorganic insulating film and an organic insulating film, .

Further, the organic insulating film is used as a photosensitive material to perform a photo process, thereby simplifying the process and reducing the cost.

An oxide thin film transistor, an inorganic insulating film, an organic insulating film,

Description

TECHNICAL FIELD [0001] The present invention relates to an oxide thin film transistor,

The present invention relates to a method of manufacturing an oxide thin film transistor, and more particularly, to a method of manufacturing an oxide thin film transistor using an amorphous zinc oxide based semiconductor as an active layer.

Recently, interest in information display has increased, and a demand for using portable information media has increased, and a light-weight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out. Particularly, among such flat panel display devices, a liquid crystal display (LCD) is an apparatus for displaying an image using the optical anisotropy of a liquid crystal, and is excellent in resolution, color display and picture quality and is actively applied to a notebook or a desktop monitor have.

The liquid crystal display comprises a color filter substrate, an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

An active matrix (AM) method, which is a driving method mainly used in the liquid crystal display, is a method of driving a liquid crystal of a pixel portion by using an amorphous silicon thin film transistor (a-Si TFT) to be.

Hereinafter, the structure of a typical liquid crystal display device will be described in detail with reference to FIG.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

As shown in the figure, the liquid crystal display comprises a color filter substrate 5, an array substrate 10, and a liquid crystal layer (not shown) formed between the color filter substrate 5 and the array substrate 10 30).

The color filter substrate 5 includes a color filter C composed of a plurality of sub-color filters 7 implementing colors of red (R), green (G) and blue (B) A black matrix 6 for separating the sub-color filters 7 from each other and shielding light transmitted through the liquid crystal layer 30 and a transparent common electrode for applying a voltage to the liquid crystal layer 30 8).

The array substrate 10 includes a plurality of gate lines 16 and data lines 17 arranged vertically and horizontally to define a plurality of pixel regions P and a plurality of gate lines 16 and data lines 17 A thin film transistor T which is a switching element formed in the intersection region and a pixel electrode 18 formed on the pixel region P. [

The color filter substrate 5 and the array substrate 10 are bonded together to face each other by a sealant (not shown) formed on the periphery of the image display area to constitute a liquid crystal display panel. The color filter substrate 5 (Not shown) formed on the color filter substrate 5 or the array substrate 10 are bonded to each other.

Meanwhile, since the liquid crystal display device described above is a light-emitting device rather than a light emitting device and has technical limitations such as brightness, contrast ratio, and viewing angle, the liquid crystal display device is a light- Development of a new display device capable of overcoming the disadvantages has been actively developed.

OLED (Organic Light Emitting Diode), which is one of the new flat panel display devices, has excellent viewing angle and contrast ratio compared to liquid crystal displays because it is a self-luminous type. Lightweight thin type can be used because it does not need backlight And is also advantageous in terms of power consumption. In addition, it has the advantage of being able to drive a DC low voltage and has a high response speed, and is particularly advantageous in terms of manufacturing cost.

In recent years, studies have been actively made on the enlargement of an organic electroluminescent display. In order to achieve this, development of a transistor ensuring stable operation and durability by securing a constant current characteristic as a driving transistor of an organic electroluminescent device is required.

The amorphous silicon thin film transistor used in the above-described liquid crystal display device can be manufactured in a low temperature process, but has a very small mobility and does not satisfy a constant current bias condition. On the other hand, the polycrystalline silicon thin film transistor has a high mobility and a satisfactory constant current test condition, but it is difficult to obtain a uniform characteristic, so it is difficult to make a large area and a high temperature process is required.

In this case, a general amorphous silicon thin film transistor uses a silicon nitride film (SiNx) as a protective film for protecting an active layer. However, the oxide thin film transistor has an amorphous silicon thin film transistor and an amorphous silicon thin film transistor When the SiNx is used as a protective film in another way, the characteristics of the oxide semiconductor are lost and the thin film transistor can not be realized.

That is, the oxide semiconductor is an oxygen-based material, which is susceptible to external stimuli and hydrogen, so that when a protective film is formed by a SiNx applied to a general amorphous silicon thin film transistor, It is impossible to realize a thin film transistor.

2 is a cross-sectional view schematically showing the structure of a general oxide thin film transistor.

As shown in the figure, a general oxide thin film transistor includes a gate electrode 21 formed on a predetermined substrate 10, a gate insulating film 15a formed on the gate electrode 21, a gate insulating film 15b formed on the gate insulating film 15a, The source and drain electrodes 22 and 23 and the protective film 15b formed on the source and drain electrodes 22 and 23 and the source and drain electrodes 22 and 23 electrically connected to a predetermined region of the active layer 24, And a pixel electrode 18 electrically connected to the electrode 23.

A portion of the passivation layer 15b is partially removed to expose a portion of the drain electrode 23. The pixel electrode 18 is electrically connected to the drain electrode 23 are electrically connected to each other.

At this time, the general oxide thin film transistor uses a single layer of a protective layer made of silicon oxide (SiO ₂ ) to protect the oxide semiconductor. SiO ₂ should be deposited at a low temperature of 300 ° C or less due to the characteristics of the oxide semiconductor. As a result, the density and characteristics of the membrane deteriorate, which is susceptible to external environmental changes such as high humidity.

3A and 3B are graphs showing transfer characteristics of the general oxide thin film transistor shown in FIG.

3A shows an initial transfer characteristic of the oxide thin film transistor when SiO ₂ deposited at a low temperature is used as a protective film, and FIG. 3B shows a transfer characteristic of the oxide thin film transistor measured under a high humidity condition.

As shown in the figure, a general oxide thin film transistor using SiO ₂ deposited at a low temperature as a protective film has a deteriorated device characteristic such as an increase in an S-factor (A) and an off current (B) .

This is because the film density is low as SiO ₂ is deposited at a low temperature, so that it is sensitive to the external environment such as humidity.

An object of the present invention is to provide a method of manufacturing an oxide thin film transistor using an amorphous zinc oxide-based semiconductor as an active layer.

It is another object of the present invention to provide a method for fabricating an oxide thin film transistor which can prevent degradation of device characteristics due to an external environment and simplify a process and reduce cost.

Other objects and features of the present invention will be described in the following description of the invention and claims.

According to another aspect of the present invention, there is provided a method for fabricating an oxide thin film transistor including forming an active layer made of a-IGZO semiconductor on a gate insulating film, forming an inorganic insulating film made of SiO ₂ at a temperature of 300 ° C or less, Forming a second protective film by exposing and developing the photosensitive organic insulating film through a predetermined mask and selectively patterning the inorganic insulating film using the second protective film as a mask And forming a first protective film having a contact hole exposing a part of the drain electrode.

As described above, the method for manufacturing an oxide thin film transistor according to the present invention provides an effect of being applicable to a large-area display by using an amorphous zinc oxide-based semiconductor as an active layer.

In addition, a method of manufacturing an oxide thin film transistor according to the present invention is characterized in that a protective film is formed of a double layer of an inorganic insulating film and an organic insulating film in the oxide semiconductor, thereby preventing deterioration of device characteristics due to the external environment, The process is simplified and the cost is reduced.

In addition, the method of manufacturing an oxide thin film transistor according to the present invention can use a process line of a 4-mask process applied to a general amorphous silicon thin film transistor, thereby reducing manufacturing costs.

Hereinafter, preferred embodiments of a method of manufacturing an oxide thin film transistor according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 4 is a cross-sectional view schematically showing the structure of an oxide thin film transistor according to an embodiment of the present invention, and schematically shows the structure of an oxide thin film transistor using an amorphous zinc oxide-based semiconductor as an active layer.

As shown in the drawing, the oxide thin film transistor according to the embodiment of the present invention includes a gate electrode 121 formed on a substrate 110, a gate insulating film 115a formed on the gate electrode 121, Drain electrodes 122 and 123 electrically connected to a predetermined region of the active layer 124 and source and drain electrodes 122 and 123 formed on the active layer 124. The active layer 124 is formed of amorphous zinc oxide- And a pixel electrode 118 electrically connected to the drain electrode 123. The protective layer 115b is formed of a double layer of a first insulating layer 115b 'and a second insulating layer 115b'

A portion of the passivation layer 115b is partially removed to expose a portion of the drain electrode 123. The pixel electrode 118 is electrically connected to the drain electrode 123 are electrically connected to each other.

In particular, the protective layer 115b according to the embodiment of the present invention includes a first protective layer 115b 'made of an inorganic insulating layer such as SiO ₂ deposited at a low temperature of 300 ° C or lower, benzocyclobutene (BCB) and a second protective film 115b "made of an organic insulating film such as a photo acryl.

At this time, the first protective layer 115b 'may be formed to a thickness of about 1000 to 3000 Å, and the second protective layer 115b "may be formed to a thickness of about 1 to 5 袖 m.

The oxide thin film transistor according to the embodiment of the present invention is formed using the amorphous zinc oxide based semiconductor to form the active layer 124 to satisfy the high mobility and constant current test conditions, It has advantages.

The oxide thin film transistor in which an amorphous zinc oxide based semiconductor material is applied to the active layer 124 is used as a material of the liquid crystal display device, And an organic light emitting display.

In recent years, a great deal of attention and activity have been focused on transparent electronic circuits. Since the oxide thin film transistor in which the amorphous zinc oxide based semiconductor material is applied to the active layer 124 has high mobility and can be manufactured at a low temperature, There is an advantage that it can be used in electronic circuits.

Particularly, the oxide thin film transistor according to the embodiment of the present invention is characterized in that an active layer 124 made of a-IGZO semiconductor containing heavy metals such as indium (In) and gallium (Ga) is formed on the ZnO .

The a-IGZO semiconductor is transparent because it can transmit visible light, and the oxide thin film transistor fabricated from the a-IGZO semiconductor has a mobility of 1 to 100 cm ² / Vs, and has a higher mobility characteristic than the amorphous silicon thin film transistor .

In addition, the a-IGZO semiconductor can produce UV light emitting diode (LED), white LED, and other components having a wide band gap and high color purity and can process at low temperature to produce a light and flexible product It has the characteristic that it can be.

Moreover, since the oxide thin film transistor fabricated from the a-IGZO semiconductor exhibits a uniform characteristic similar to that of an amorphous silicon thin film transistor, the structure of the oxide thin film transistor is as simple as an amorphous silicon thin film transistor and has advantages of being applicable to a large area display.

The oxide thin film transistor according to an embodiment of the present invention having such characteristics can control the carrier concentration of the active layer 124 by controlling the oxygen concentration in the reactive gas during the sputtering, .

As described above, the oxide thin film transistor is mainly used at a low temperature (less than 300 캜) SiO ₂ in which hydrogen (H) groups are small as a protective film of an oxide semiconductor. This is because when the SiO ₂ is deposited at a high temperature, the a-IGZO semiconductor is damaged and the device tends to be metalized. However, when SiO ₂ is deposited at a low temperature, the film density and characteristics are lowered, and the back channel of the active layer is greatly affected by the external environment such as humidity and the device characteristics are lowered.

Accordingly, the oxide thin film transistor of the present invention is characterized in that a protective film is formed of a double layer of an inorganic insulating film and an organic insulating film and a photosensitive material is used for the organic insulating film in order to prevent degradation of the device characteristics, thereby simplifying the process and reducing the cost .

5A and 5B are graphs showing transfer characteristics of the oxide thin film transistor according to the embodiment of the present invention shown in FIG.

5A illustrates an initial transfer characteristic of an oxide thin film transistor according to an embodiment of the present invention in which SiO ₂ deposited at a low temperature is used as a first protective layer and a second protective layer is formed using an organic insulating layer on the first protective layer. And FIG. 5B is a transfer characteristic of the oxide thin film transistor according to the embodiment of the present invention measured under high humidity conditions.

As shown in the figure, the oxide thin film transistor according to the embodiment of the present invention exhibits excellent device characteristics without changing the S-factor and the off current in the initial state even under the high humidity condition.

Hereinafter, a process for manufacturing an oxide thin film transistor according to an embodiment of the present invention will be described in detail with reference to the drawings.

FIGS. 6A to 6G are cross-sectional views sequentially illustrating the manufacturing process of the oxide TFT according to the embodiment of the present invention shown in FIG. 4. Referring to FIGS. 6A to 6G, the manufacturing process of the oxide TFT using the photosensitive organic insulating film For example.

As shown in FIG. 6A, a predetermined gate electrode 121 is formed on a substrate 110 made of a transparent insulating material.

At this time, the amorphous zinc oxide-based composite semiconductor to be applied to the oxide thin film transistor of the present invention can be used for low-temperature deposition such as a plastic substrate and a soda lime glass. In addition, since the amorphous characteristics are exhibited, it is possible to use the substrate 110 for a large area display.

The gate electrode 121 is formed by selectively depositing a first conductive layer on the entire surface of the substrate 110, and then patterning the conductive layer by a photolithography process.

Here, the first conductive layer may be formed of one selected from the group consisting of aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), nickel (Ni), chromium A low resistance opaque conductive material such as molybdenum (Mo), titanium (Ti), platinum (Pt), tantalum (Ta) The first conductive layer may be formed of an opaque conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like. Or may be formed as a laminated multilayer structure.

6B, an inorganic insulating film such as SiNx or SiO ₂ or a high dielectric oxide film such as hafnium (Hf) oxide or aluminum oxide is formed on the entire surface of the substrate 110 on which the gate electrode 121 is formed Thereby forming a gate insulating film 115a.

At this time, the gate insulating layer 115a may be formed by Chemical Vapor Deposition (CVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

The amorphous zinc oxide based semiconductor layer is formed on the entire surface of the substrate 110 on which the gate insulating layer 115a is formed and then selectively patterned through a photolithography process to form the amorphous zinc oxide based semiconductor layer on the gate electrode 121. [ The active layer 124 is formed.

The amorphous zinc oxide-based semiconductor may be an amorphous zinc oxide-based semiconductor, for example, a gallium oxide (Ga ₂ O ₃ ), an indium oxide (In ₂ O ₃ ), and a zinc oxide ZnO). Alternatively, a chemical vapor deposition (CVD) method such as chemical vapor deposition or atomic layer deposition (ALD) may be used in addition to the sputtering method.

The a-IGZO semiconductor may be formed using a complex oxide target such as an atomic ratio of gallium, indium and zinc of 1: 1: 1, 2: 2: 1, 3: 2: 1, 4: 2: .

Here, the oxide thin film transistor according to the present invention can control the carrier concentration of the active layer 124 by controlling the oxygen concentration in the reactive gas during the sputtering for forming the amorphous zinc oxide-based semiconductor layer, It is possible to secure a uniform device characteristic under the condition of%.

Next, as shown in FIG. 6C, a second conductive layer is formed on the entire surface of the substrate 110 on which the active layer 124 is formed.

The second conductive layer may be formed of a low resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, nickel, chromium, molybdenum, titanium, platinum or tantalum to form a source electrode and a drain electrode. Also, the second conductive layer may be an opaque conductive material such as indium-tin-oxide or indium-zinc-oxide, or may have a multi-layer structure in which two or more conductive materials are stacked.

The second conductive layer is selectively patterned through a photolithography process to form a source electrode 122 and a drain electrode 123 electrically connected to the source region and the drain region of the active layer 124.

Although the active layer 124 and the source / drain electrodes 122 and 123 are separately formed through two mask processes in the embodiment of the present invention, The active layer 124 and the source / drain electrodes 122 and 123 may be simultaneously formed by a single mask process by using a half-tone mask or a diffraction mask. In this case, a process line of a 4-mask process applied to a general amorphous silicon thin film transistor can be used, thereby providing a manufacturing cost reduction effect.

6D, an inorganic insulating film 115 'and an organic insulating film 115' 'are sequentially formed on the entire surface of the substrate 110 on which the active layer 124 and the source / drain electrodes 122 and 123 are formed. .

At this time, the inorganic insulating film 115 'may be made of SiO ₂ deposited at a low temperature of 300 ° C or less, and its thickness may be about 1000 to 3000 Å. The organic insulating layer 115 '' may be formed of a photosensitive material such as benzocyclobutene or photoacrylic to a thickness of about 1 to 5 μm.

By using the photosensitive organic insulating film 115 "as the second protective film in this way, an additional photoresist coating step for the photolithography process becomes unnecessary.

That is, after the predetermined mask 180 is placed on the substrate 110 on which the photosensitive organic insulating film 115 'is formed, the exposure and development processes are performed. As shown in FIG. 6E, A predetermined organic insulating film pattern 115 '', that is, a second protective film is formed.

6F, the inorganic insulating layer 115 'is selectively patterned using the organic insulating layer pattern 115' 'as a mask. Then, as shown in FIG. 6F, the inorganic insulating layer 115' A protective film 115b on which a contact hole 140 for exposing a part is formed is formed.

At this time, the protective layer 115b used in the oxide thin film transistor according to the embodiment of the present invention includes the first protective layer 115b 'made of an inorganic insulating layer and the second protective layer 115b' 'formed of a photosensitive organic insulating layer, .

6G, a third conductive layer is formed on the entire surface of the substrate 110 on which the protective layer 115b is formed, and then selectively removed through a photolithography process, And a pixel electrode 118 electrically connected to the drain electrode 123 through the contact hole 140 is formed.

The third conductive layer may be a transparent conductive layer having a high transmittance such as indium tin oxide (ITO) or indium zinc oxide (IZO) ≪ / RTI >

As described above, in the method of manufacturing an oxide thin film transistor according to an embodiment of the present invention, since the photosensitive organic insulating film is used as the second protective film, the process of applying the photosensitive film, the strip process, and the patterning process of the second protective film are unnecessary, However, the present invention is not limited thereto. In the present invention, a non-photosensitive organic insulating film may be used as the second protective film, which will be described in detail through another manufacturing method of the following oxide thin film transistor.

7A to 7G are cross-sectional views sequentially illustrating another manufacturing process of the oxide thin film transistor according to the embodiment of the present invention shown in FIG. 4, except that an organic insulating film having no photosensitivity is used as the second protective film. Which is substantially the same as the manufacturing process of the oxide thin film transistor according to the embodiment of the present invention.

As shown in FIG. 7A, a predetermined gate electrode 221 is formed on a substrate 210 made of a transparent insulating material.

At this time, the amorphous zinc oxide-based compound semiconductor to be applied to the oxide thin film transistor of the present invention can be used for low-temperature deposition such as a plastic substrate and a soda lime glass. In addition, since the amorphous characteristics are exhibited, it is possible to use the substrate 210 for a large area display.

The gate electrode 221 is formed by selectively depositing a first conductive layer on the entire surface of the substrate 210, and then patterning the conductive layer through a photolithography process.

7B, an inorganic insulating film such as SiNx or SiO ₂ or a gate insulating film 215a made of hafnium oxide or a high-dielectric oxide film such as aluminum oxide is formed on the entire surface of the substrate 210 on which the gate electrode 221 is formed. ).

The amorphous zinc oxide based semiconductor layer is formed on the entire surface of the substrate 210 on which the gate insulating layer 215a is formed and then selectively patterned through a photolithography process to form the amorphous zinc oxide based semiconductor layer on the gate electrode 221. [ The active layer 224 is formed.

At this time, the amorphous zinc oxide-based semiconductor may be formed of, for example, an amorphous zinc oxide-based composite semiconductor. Particularly, the a-IGZO semiconductor may be formed by a sputtering method using a composite target of gallium oxide, indium oxide and zinc oxide In addition, it is also possible to use a chemical vapor deposition method such as chemical vapor deposition or atom deposition.

The a-IGZO semiconductor may be formed using a complex oxide target such as an atomic ratio of gallium, indium and zinc of 1: 1: 1, 2: 2: 1, 3: 2: 1, 4: 2: .

The oxide thin film transistor according to the present invention can control the carrier concentration of the active layer 224 by controlling the oxygen concentration in the reactive gas during the sputtering for forming the amorphous zinc oxide based semiconductor layer, It is possible to secure a uniform device characteristic under the condition of%.

Next, as shown in FIG. 7C, a second conductive layer is formed on the entire surface of the substrate 210 on which the active layer 224 is formed.

The source electrode 222 and the drain electrode 223, which are electrically connected to the source region and the drain region of the active layer 224, are formed by selectively patterning the second conductive layer through a photolithography process.

7D, an inorganic insulating film 215 'and an organic insulating film 215' 'are sequentially formed on the entire surface of the substrate 210 on which the active layer 224 and the source / drain electrodes 222 and 223 are formed. .

At this time, the inorganic insulating film 215 'may be made of SiO ₂ deposited at a low temperature of 300 ° C or less, and its thickness may be about 1000 to 3000 Å. The organic insulating layer 215 "may be formed of a non-photosensitive material with a thickness of about 1 to 5 mu m.

Thereafter, a predetermined photoresist layer 270 is formed on the substrate 210 on which the organic insulating layer 215 'is formed, and then the photoresist layer 270 is exposed and developed through the mask 280. Then, as shown in FIG. 7E, A predetermined photoresist pattern 270 'made of a photoresist is formed.

7F, when the inorganic insulating film 115 'and the organic insulating film 115' are selectively patterned using the photoresist pattern 270 'as a mask, A protective film 215b having a contact hole 240 exposing a part of the electrode 223 is formed.

At this time, the protective film 215b used in the oxide thin film transistor according to the embodiment of the present invention is composed of a first protective film 215b 'made of an inorganic insulating film and a second protective film 215b' made of a non- .

After the photoresist layer 270 'is removed through a strip process, a third conductive layer is formed on the entire surface of the substrate 210 on which the passivation layer 215b is formed, as shown in FIG. 7G. Thereafter, the third conductive film is selectively removed through a photolithography process, thereby forming a third conductive film on the substrate 210. The third conductive film is electrically connected to the drain electrode 223 through the contact hole 240, Electrode 218 is formed.

As described above, the present invention can be applied not only to liquid crystal display devices but also to other display devices manufactured using thin film transistors, for example, organic electroluminescent display devices in which organic electroluminescent devices are connected to driving transistors.

Further, the present invention has an advantage that it can be used in a transparent electronic circuit or a flexible display by applying an amorphous zinc oxide-based semiconductor material having high mobility and being processable at a low temperature as an active layer.

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

2 is a cross-sectional view schematically showing the structure of a general oxide thin film transistor.

FIGS. 3A and 3B are graphs showing transfer characteristics of the general oxide thin film transistor shown in FIG. 2; FIG.

4 is a cross-sectional view schematically showing the structure of an oxide thin film transistor according to an embodiment of the present invention.

5A and 5B are graphs showing transfer characteristics of an oxide thin film transistor according to an embodiment of the present invention shown in FIG.

6A to 6G are cross-sectional views sequentially illustrating the manufacturing process of the oxide thin film transistor according to the embodiment of the present invention shown in FIG.

7A to 7G are cross-sectional views sequentially showing another manufacturing process of the oxide thin film transistor according to the embodiment of the present invention shown in FIG.

DESCRIPTION OF REFERENCE NUMERALS

110, 210: substrate 115a, 215a: gate insulating film

115b, 215b: protective film 115b'215b ': first protective film

115b ", 215b ": second protective film 121, 221: gate electrode

122, 222: source electrode 123, 223: drain electrode

124,224: active layer

Claims (7)

Forming a gate insulating film on a substrate on which a gate electrode is formed; Forming an active layer made of a-IGZO semiconductor on the gate insulating film; Forming a source electrode and a drain electrode on the substrate on which the active layer is formed; Sequentially forming an inorganic insulating film made of SiO ₂ and a photosensitive organic insulating film at a temperature of 300 ° C or lower on the substrate on which the source electrode and the drain electrode are formed; Exposing and developing the photosensitive organic insulating film through a predetermined mask to form a second protective film; Forming a first protective film having a contact hole for selectively exposing a portion of the drain electrode by selectively patterning the inorganic insulating film using the second protective film as a mask; And And forming a pixel electrode electrically connected to the drain electrode through the contact hole. delete The method for manufacturing an oxide thin film transistor according to claim 1, wherein the photosensitive organic insulating film is formed of benzocyclobutene or photoacryl. The method of claim 1, wherein the inorganic insulating layer is formed to a thickness of 1000 to 3000 Å, and the organic insulating layer is formed to a thickness of 1 to 5 탆. The method of manufacturing an oxide thin film transistor according to claim 1, wherein the substrate is formed of a glass substrate or a plastic substrate. delete The method for manufacturing an oxide thin film transistor according to claim 1, wherein the active layer is formed with an oxygen concentration of 1 to 20% in a reactive gas during sputtering.

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