KR101594343B1 - Curable composition and method for producing thereof, cured product, and optical semiconductor device - Google Patents
Curable composition and method for producing thereof, cured product, and optical semiconductor device Download PDFInfo
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- KR101594343B1 KR101594343B1 KR1020120118863A KR20120118863A KR101594343B1 KR 101594343 B1 KR101594343 B1 KR 101594343B1 KR 1020120118863 A KR1020120118863 A KR 1020120118863A KR 20120118863 A KR20120118863 A KR 20120118863A KR 101594343 B1 KR101594343 B1 KR 101594343B1
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- polysiloxane
- curable composition
- cured product
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- hydrocarbon compound
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- 239000000203 mixture Substances 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title description 4
- -1 polysiloxane Polymers 0.000 claims abstract description 139
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 107
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 27
- 229930195734 saturated hydrocarbon Natural products 0.000 claims abstract description 27
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 125000003118 aryl group Chemical group 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 238000009835 boiling Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 125000004429 atom Chemical group 0.000 claims description 3
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- 230000000694 effects Effects 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 39
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000003786 synthesis reaction Methods 0.000 description 20
- 238000006459 hydrosilylation reaction Methods 0.000 description 15
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 14
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- 238000006243 chemical reaction Methods 0.000 description 7
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007809 chemical reaction catalyst Substances 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 5
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 125000006038 hexenyl group Chemical group 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 3
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 2
- QEGNUYASOUJEHD-UHFFFAOYSA-N 1,1-dimethylcyclohexane Chemical compound CC1(C)CCCCC1 QEGNUYASOUJEHD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000013006 addition curing Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- SORVFRRXWOKHGG-UHFFFAOYSA-N bis(2-methylprop-1-enylsilyloxy)-diphenylsilane Chemical compound C1(=CC=CC=C1)[Si](O[SiH2]C=C(C)C)(O[SiH2]C=C(C)C)C1=CC=CC=C1 SORVFRRXWOKHGG-UHFFFAOYSA-N 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 125000005023 xylyl group Chemical group 0.000 description 2
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- OMVJZHLKVHCHEW-UHFFFAOYSA-N bis[[hydroxy(dimethyl)silyl]oxy]-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](O[Si](C)(C)O)(O[Si](C)(O)C)C1=CC=CC=C1 OMVJZHLKVHCHEW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000000582 cycloheptyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- ACXIAEKDVUJRSK-UHFFFAOYSA-N methyl(silyloxy)silane Chemical compound C[SiH2]O[SiH3] ACXIAEKDVUJRSK-UHFFFAOYSA-N 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- VTYCDJPJGNRAHU-UHFFFAOYSA-N tris(2-methylprop-1-enylsilyloxy)-phenylsilane Chemical compound C1(=CC=CC=C1)[Si](O[SiH2]C=C(C)C)(O[SiH2]C=C(C)C)O[SiH2]C=C(C)C VTYCDJPJGNRAHU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(해결 수단) 알케닐기를 갖는 폴리실록산 (A), 포화 탄화수소 화합물 (B) 및 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산 (D)를 함유하는 것을 특징으로 하는 경화성 조성물.
(효과) 본 발명의 경화성 조성물은, 택이 충분히 저감된 경화물을 형성할 수 있다. 본 발명의 경화성 조성물로 형성된 경화물을 봉지재 등으로서 갖는 광반도체 장치는, 경화물의 표면에 먼지 등이 부착할 우려가 작고, 또한, 제품의 선별에 사용하는 파츠 피더에서, 패키지끼리가 점착되는 등의 문제가 발생할 우려가 작다.(C) A curable composition characterized by containing a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B) and a polysiloxane (D) having at least two silicon atom-bonded hydrogen atoms per molecule.
(Effect) The curable composition of the present invention can form a cured product having sufficiently reduced tackiness. The optical semiconductor device having a cured product formed of the curable composition of the present invention as an encapsulating material or the like is less likely to adhere to dust or the like on the surface of the cured product and the packages are adhered to each other in a part feeder used for sorting products There is little concern that such problems will occur.
Description
본 발명은, 경화성 조성물 및 그의 제조 방법, 경화물, 및 광반도체 장치에 관한 것이다.The present invention relates to a curable composition, a method for producing the same, a cured product, and an optical semiconductor device.
부가 경화형 실리콘 고무 조성물은, 내후성, 내열성, 경도, 신장 등의 고무적 성질이 우수한 경화물을 형성하는 점에서 LED의 패키지 봉지제 등의 여러 가지의 용도에 사용되고 있다. 그러나, 그 경화물의 표면에 택이 있기 때문에 먼지가 부착하고, 또한, 제품의 선별에 사용하는 파츠 피더(parts feeder)에서, 패키지끼리가 점착되는 등의 문제가 있다.The addition-curable silicone rubber composition is used in various applications such as package encapsulant for LED in that it forms a cured product having excellent properties such as weather resistance, heat resistance, hardness and elongation. However, there is a problem that dust adheres to the surface of the cured product, and the packages adhere to each other in a parts feeder used for sorting products.
택을 없애기 위해서는, 경질 실리콘 수지를 이용하면 좋지만, 그의 경화물은 내충격성이 낮고, 특히 열충격에 의해 크랙이 발생하기 쉽다는 문제가 있다.In order to eliminate the tack, a hard silicone resin may be used, but the cured product thereof has a low impact resistance, and cracks tend to occur particularly due to thermal shock.
그래서, 양자의 특성을 이용하여, 부가 경화형의 실리콘 고무 조성물에 레진 형상의 오르가노폴리실록산을 배합함으로써 경화물의 강도를 향상시키는 방법 및, 부가 경화형의 실리콘 고무 조성물의 경화물의 위에 레진을 피복하는 방법 등이 제안되어 있다(특허문헌 1, 2).Thus, a method of improving the strength of the cured product by compounding an organopolysiloxane in the form of a resin to the addition-curing type silicone rubber composition using the properties of both, and a method of coating a resin on the cured product of the addition curing type silicone rubber composition, etc. (Patent Documents 1 and 2).
본 발명은, 택이 저감된 경화물을 얻을 수 있는 경화성 조성물 및 그의 제조 방법, 당해 경화성 조성물로부터 얻어지는 경화물, 당해 경화물을 갖는 광반도체 장치를 제공하는 것을 목적으로 한다.An object of the present invention is to provide a curable composition capable of obtaining a cured product having reduced tackiness, a process for producing the same, a cured product obtained from the curable composition, and an optical semiconductor device having the cured product.
상기 목적을 달성하는 본 발명은 이하와 같다.The present invention for achieving the above object is as follows.
[1] 알케닐기를 갖는 폴리실록산 (A), 포화 탄화수소 화합물 (B) 및 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산 (D)를 함유하는 경화성 조성물.[1] A curable composition containing a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B) and a polysiloxane (D) having at least two silicon atom-bonded hydrogen atoms per molecule.
[2] 포화 탄화수소 화합물 (B)의 비점이, 1기압하 50℃∼150℃인 상기 [1]에 기재된 경화성 조성물.[2] The curable composition according to the above [1], wherein the boiling point of the saturated hydrocarbon compound (B) is 50 ° C to 150 ° C under 1 atm.
[3] 포화 탄화수소 화합물 (B)의 함유 비율이, 0.1∼5000ppm인 상기 [1] 또는 [2]에 기재된 경화성 조성물.[3] The curable composition according to [1] or [2], wherein the content of the saturated hydrocarbon compound (B) is 0.1 to 5000 ppm.
[4] 포화 탄화수소 화합물 (B)가, 포화 지환식 탄화수소 화합물인 상기 [1]∼[3] 중 어느 한 항에 기재에 경화성 조성물.[4] The curable composition according to any one of [1] to [3], wherein the saturated hydrocarbon compound (B) is a saturated alicyclic hydrocarbon compound.
[5] 알케닐기를 갖는 폴리실록산 (A)가, 아릴기를 갖는 폴리실록산인 상기 [1]∼[4] 중 어느 한 항에 기재된 경화성 조성물.[5] The curable composition according to any one of [1] to [4], wherein the polysiloxane (A) having an alkenyl group is a polysiloxane having an aryl group.
[6] 알케닐기를 갖는 폴리실록산 (A), 포화 탄화수소 화합물 (B) 및 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산 (D)를 함유하는 경화성 조성물의 제조 방법으로서, 상기 폴리실록산 (A) 및 폴리실록산 (D) 중 적어도 어느 한쪽을, 상기 포화 탄화수소 화합물 (B)를 합성 용매로서 이용하여 합성하고, 얻어진 폴리실록산 함유 합성 용액의 농축물을 이용하는 것을 특징으로 하는 경화성 조성물의 제조 방법.[6] A process for producing a curable composition comprising a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B) and a polysiloxane (D) having at least two silicon atom-bonded hydrogen atoms per molecule, ) And the polysiloxane (D) are synthesized by using the saturated hydrocarbon compound (B) as a synthesis solvent, and a concentrate of the obtained polysiloxane-containing synthesis solution is used.
[7] 상기 [1]∼[5] 중 어느 한 항에 기재된 경화성 조성물을 경화함으로써 얻어지는 경화물.[7] A cured product obtained by curing the curable composition according to any one of [1] to [5].
[8] 반도체 발광 소자와, 당해 반도체 발광 소자를 피복하는, 상기 [7]에 기재된 경화물을 갖는 광반도체 장치.[8] A semiconductor optical device having a semiconductor light emitting element and the cured body according to [7], which covers the semiconductor light emitting element.
본 발명의 경화성 조성물은, 택이 충분히 저감된 경화물을 형성할 수 있다. 본 발명의 경화성 조성물로 형성된 경화물을 봉지재 등으로서 갖는 광반도체 장치는, 경화물의 표면에 먼지 등이 부착할 우려가 작고, 또한, 제품의 선별에 사용하는 파츠 피더에서, 패키지끼리가 점착되는 등의 문제가 발생할 우려가 작다.The curable composition of the present invention can form a cured product having sufficiently reduced tackiness. The optical semiconductor device having a cured product formed of the curable composition of the present invention as an encapsulating material or the like is less likely to adhere to dust or the like on the surface of the cured product and the packages are adhered to each other in a part feeder used for sorting products There is little concern that such problems will occur.
도 1은 광반도체 장치의 일 구체예를 나타내는 개략도이다.1 is a schematic view showing one specific example of a photosemiconductor device.
(발명을 실시하기 위한 형태)(Mode for carrying out the invention)
<경화성 조성물>≪ Curable composition >
본 발명의 경화성 조성물은, 알케닐기를 갖는 폴리실록산 (A), 포화 탄화수소 화합물 (B) 및 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산 (D)를 함유한다. 본 발명의 경화성 조성물은, 그 외, 하이드로실릴화 반응용 촉매 (C)나 첨가제를 함유할 수 있다.The curable composition of the present invention contains a polysiloxane (A) having an alkenyl group, a saturated hydrocarbon compound (B) and a polysiloxane (D) having at least two silicon atom-bonded hydrogen atoms per molecule. The curable composition of the present invention may further contain a catalyst (C) for hydrosilylation reaction and an additive.
또한, 본 발명에 있어서 「폴리실록산」이란, 실록산 단위 (Si-O)가 2개 이상 결합한 분자 골격을 갖는 화합물을 의미한다.In the present invention, "polysiloxane" means a compound having a molecular skeleton in which two or more siloxane units (Si-O) are bonded.
폴리실록산Polysiloxane (A) (A)
폴리실록산 (A)는, 알케닐기를 갖는 폴리실록산이다. 폴리실록산 (A)는 본 조성물의 주성분이며, 폴리실록산 (D)와의 하이드로실릴화 반응에 의해 경화되어, 경화물의 주체가 된다.The polysiloxane (A) is a polysiloxane having an alkenyl group. The polysiloxane (A) is the main component of the composition and is cured by the hydrosilylation reaction with the polysiloxane (D) to become the main component of the cured product.
폴리실록산 (A)는, 폴리실록산 (D)와의 하이드로실릴화 반응에 의해 경화될 수 있는 한 특별히 제한은 없다.The polysiloxane (A) is not particularly limited as long as it can be cured by a hydrosilylation reaction with the polysiloxane (D).
폴리실록산 (A)는, 폴리실록산 (D)와 동일한 화합물이라도 좋다. 즉, 폴리실록산 (A) 및 폴리실록산 (D)는, 동일 분자 내에 알케닐기와 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산이라도 좋다. 이러한 폴리실록산은, 본 조성물의 주제(主劑)인 동시에 가교제로서 기능한다.The polysiloxane (A) may be the same compound as the polysiloxane (D). That is, the polysiloxane (A) and the polysiloxane (D) may be a polysiloxane having an alkenyl group and at least two silicon-bonded hydrogen atoms in the same molecule. Such a polysiloxane functions as a main agent and a crosslinking agent of the present composition.
폴리실록산 (A)가 갖는 알케닐기로서는, 예를 들면, 비닐기, 알릴기, 프로페닐기, 이소프로페닐기, 부테닐기, 이소부테닐기, 펜테닐기, 헵테닐기, 헥세닐기 및 사이클로헥세닐기 등을 들 수 있다. 이들 중에서도, 비닐기, 알릴기 및 헥세닐기가 바람직하다.Examples of the alkenyl group of the polysiloxane (A) include vinyl, allyl, propenyl, isopropenyl, butenyl, isobutenyl, pentenyl, heptenyl, . Of these, a vinyl group, an allyl group and a hexenyl group are preferable.
폴리실록산 (A)에 있어서의 알케닐기의 함유량은, 폴리실록산 (A) 중에 포함되는 전체 Si 원자의 수를 100몰%로 할 때, 3∼50몰%인 것이 바람직하고, 보다 바람직하게는 5∼40몰%이고, 더욱 바람직하게는 10∼30몰%이다. 알케닐기의 함유량이 상기 범위 내이면, 폴리실록산 (A)와 폴리실록산 (D)와의 하이드로실릴화 반응이 적합하게 진행되어, 강도가 강한 경화물을 얻을 수 있다.The content of the alkenyl group in the polysiloxane (A) is preferably from 3 to 50 mol%, more preferably from 5 to 40 mol%, based on 100 mol% of all the Si atoms contained in the polysiloxane (A) Mol%, and more preferably 10 to 30 mol%. When the content of the alkenyl group is within the above range, the hydrosilylation reaction between the polysiloxane (A) and the polysiloxane (D) proceeds appropriately, and a cured product having high strength can be obtained.
폴리실록산 (A)는, 아릴기를 갖는 폴리실록산인 것이 바람직하다.The polysiloxane (A) is preferably a polysiloxane having an aryl group.
폴리실록산 (A)가 아릴기를 가지면, LED 봉지재로서 이용했을 때에 높은 휘도가 얻어진다는 특성이 발현한다. 폴리실록산 (A) 중에 포함되는 전체 Si 원자의 수를 100몰%로 할 때, 폴리실록산 (A)에 포함되는 아릴기의 함유량은 30∼120몰%인 것이 바람직하고, 보다 바람직하게는 50∼110몰%, 더욱 바람직하게는 70∼100몰%이다. 아릴기의 함유량이 30∼120몰%의 범위 내에 있을 때, 본 조성물로부터 휘도가 높고, 굴절률이 높은 경화막이 얻어진다. 상기 아릴기로서는, 페닐기, 톨릴기, 자일릴기, 나프틸기 등을 들 수 있다.When the polysiloxane (A) has an aryl group, a characteristic that a high luminance is obtained when used as an LED encapsulant is exhibited. When the total number of Si atoms contained in the polysiloxane (A) is 100 mol%, the content of the aryl group in the polysiloxane (A) is preferably 30 to 120 mol%, more preferably 50 to 110 mol% %, More preferably 70 to 100 mol%. When the content of the aryl group is within the range of 30 to 120 mol%, a cured film having a high luminance and a high refractive index can be obtained from the composition. Examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group.
폴리실록산 (A)는, 하기식 (1)로 나타나는 폴리실록산인 것이 바람직하다. 폴리실록산 (A)가, 이와 같이 폴리실록산쇄를 구성하는 동일한 규소 원자에 2개의 아릴기가 결합되어 있는 실록산 단위를 가지면, 본원의 경화성 조성물로부터 얻어지는 경화물의 내습성이 높아진다.The polysiloxane (A) is preferably a polysiloxane represented by the following formula (1). When the polysiloxane (A) has a siloxane unit in which two aryl groups are bonded to the same silicon atom constituting the polysiloxane chain, the humidity resistance of the cured product obtained from the curable composition of the present invention is enhanced.
(식 중, R1, R2 및 R3은, 각각 독립적으로, 알킬기, 알케닐기, 아릴기 또는 글리시독시알킬기를 나타내고; (Wherein R 1 , R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group or a glycidoxyalkyl group;
RAr1은 아릴기를 나타내고; R Ar1 represents an aryl group;
X는 수소 원자 또는 탄소수 1∼3의 알킬기를 나타내고; X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms;
a, c, e 및 f는 각각 독립적으로 0 이상의 정수를 나타내고; a, c, e and f each independently represent an integer of 0 or more;
b 및 d는 각각 독립적으로 1 이상의 정수를 나타냄)b and d each independently represent an integer of 1 or more)
식 (1) 중, R1, R2 및 R3은, 각각 독립적으로, 알킬기, 알케닐기, 아릴기 또는 글리시독시알킬기를 나타내고; In the formula (1), R 1 , R 2 and R 3 each independently represent an alkyl group, an alkenyl group, an aryl group or a glycidoxyalkyl group;
즉, 부호 a가 붙여진 1개의 실록산 단위(구조 단위)에 대해서는, 3개 존재하는 R1은, 각각 독립적으로, 알킬기라도, 알케닐기라도, 아릴기라도, 글리시독시알킬이라도 좋다. 예를 들면 3개의 R1 중 2개 이상의 R1이 알킬기인 경우, 그 알킬기는 동일한 알킬기라도, 상이한 알킬기라도 좋다. 부호 a가 2 이상의 정수인 경우, 부호 a가 붙여진 각 실록산 단위는 동일해도 상이해도 좋다. R2 및 R3에 대해서도 R1과 동일하다.That is, with respect to one siloxane unit (structural unit) to which the symbol a is attached, the three R 1 s present may be, independently of each other, an alkyl group, an alkenyl group, an aryl group or glycidoxyalkyl. For example, when two or more R < 1 > of three R < 1 > are alkyl groups, the alkyl groups may be the same alkyl group or different alkyl groups. When the symbol a is an integer of 2 or more, the siloxane units attached with the symbol a may be the same or different. R 2 and R 3 are also the same as R 1 .
단, 부호 a가 붙여진 실록산 단위에 존재하는 R1, 부호 c가 붙여진 실록산 단위에 존재하는 R2 및 부호 d가 붙여진 실록산 단위에 존재하는 R3 중 적어도 2개는 알케닐기이고, 상기식 (1)로 나타나는 폴리실록산 (A) 1분자 중에 적어도 2개의 알케닐기가 존재한다. 예를 들면, 부호 a가 붙여진 1개의 실록산 단위에 존재하는 3개의 R1 중 1개가 알케닐기이고, 그 실록산 단위가 2개 이상 존재해도 좋다. 부호 a가 붙여진 1개의 실록산 단위에 존재하는 3개의 R1 중 2개 이상이 알케닐기이고, 그 실록산 단위가 1개 이상 존재해도 좋다. 부호 a가 붙여진 1개의 실록산 단위에 존재하는 3개의 R1 중 1개가 알케닐기이고, 그 실록산 단위가 1개 존재하며, 부호 c가 붙여진 1개의 실록산 단위에 존재하는 2개의 R2 중 1개가 알케닐기이고, 그 실록산 단위가 1개 이상 존재해도 좋다.However, R 3, at least two of the dog by the numeral R 2 and the sign of a is present in R 1, the siloxane units of the sign c attached present in the attached siloxane units, d present on the attached siloxane units is an alkenyl group, the formula (1 ) Of at least two alkenyl groups in one molecule of the polysiloxane (A). For example, one out of three R < 1 > groups present in one siloxane unit attached with the symbol a is an alkenyl group and two or more siloxane units may be present. Two or more of the three R < 1 > s present in one siloxane unit attached with the symbol a may be an alkenyl group, and at least one siloxane unit may be present. One of the three R 1 s present in one siloxane unit attached with the symbol a is an alkenyl group, one siloxane unit is present, and one of the two R 2 groups present in one siloxane unit, And one or more siloxane units may be present.
또한, 부호 c가 붙여진 실록산 단위에 대해서는, 동일한 규소 원자에 결합하는 2개의 R2 중, 한쪽의 R2가 아릴기인 경우에는, 다른 한쪽의 R2는 아릴기가 아니다.Further, when two of R 2, R 2 is an aryl group of one of the coupling for the siloxane units, a code c attached, to the same silicon atoms, R 2 and the other terminal is not an aryl group.
상기 알킬기로서는, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 사이클로프로필기, 사이클로펜틸기, 사이클로헥실기, 사이클로헵틸기, 사이클로옥틸기, 보르닐기, 노르보르닐기, 아다만틸기 등을 들 수 있다. 이들 중에서도, 메틸기가 바람직하다.Examples of the alkyl group include a methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, And adamantyl group. Among these, a methyl group is preferable.
상기 알케닐기로서는, 비닐기, 알릴기, 프로페닐기, 이소프로페닐기, 부테닐기, 이소부테닐기, 펜테닐기, 헵테닐기, 헥세닐기 및 사이클로헥세닐기 등을 들 수 있다. 이들 중에서도, 비닐기, 알릴기 및 헥세닐기가 바람직하다.Examples of the alkenyl group include vinyl, allyl, propenyl, isopropenyl, butenyl, isobutenyl, pentenyl, heptenyl, hexenyl and cyclohexenyl. Of these, a vinyl group, an allyl group and a hexenyl group are preferable.
상기 아릴기로서는, 페닐기, 톨릴기, 자일릴기, 나프틸기 등을 들 수 있다. 이들 중에서도, 페닐기가 바람직하다.Examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group. Among them, a phenyl group is preferable.
상기 글리시독시알킬기로서는, 글리시독시프로필 등을 들 수 있다.Examples of the glycidoxyalkyl group include glycidoxypropyl and the like.
식 (1) 중, RAr1은 아릴기를 나타낸다. RAr1이 나타내는 아릴기는, 상기 R1, R2 및 R3이 나타내는 아릴기와 동일하다.In the formula (1), R Ar1 represents an aryl group. The aryl group represented by R Ar1 is the same as the aryl group represented by R 1 , R 2 and R 3 .
식 (1) 중, X는 수소 원자 또는 탄소수 1∼3의 알킬기를 나타낸다.In the formula (1), X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.
식 (1) 중, a, c, e 및 f는 각각 독립적으로 0 이상의 정수를 나타낸다. b 및 d는 각각 독립적으로 1 이상의 정수를 나타낸다.In the formula (1), a, c, e and f each independently represent an integer of 0 or more. b and d each independently represent an integer of 1 or more.
폴리실록산 (A)가, 부호 b가 붙여진 실록산 단위, 즉 폴리실록산쇄를 구성하는 동일한 규소 원자에 2개의 아릴기가 결합하고 있는 실록산 단위를 가짐으로써, 본 경화성 조성물로부터 얻어지는 경화물의 내습성이 향상된다.The polysiloxane (A) has a siloxane unit bonded with the symbol b, that is, a siloxane unit in which two aryl groups are bonded to the same silicon atom constituting the polysiloxane chain, whereby the moisture resistance of the cured product obtained from the present curable composition is improved.
a, b, c, d, e 및 f의 합계를 100%로 한 경우, a의 비율은, 바람직하게는 0∼70%, 보다 바람직하게는 0∼40%이다. b의 비율은, 바람직하게는 1∼70%, 보다 바람직하게는 1∼40%이다. c의 비율은, 바람직하게는 0∼70%, 보다 바람직하게는 0∼40%이다. d의 비율은, 바람직하게는 1∼80%, 보다 바람직하게는 30∼70%이다. e의 비율은, 바람직하게는 0∼50%, 보다 바람직하게는 0∼20%이다. f의 비율은, 바람직하게는 0∼40%, 보다 바람직하게는 0∼10%이다.When the sum of a, b, c, d, e and f is 100%, the ratio of a is preferably 0 to 70%, more preferably 0 to 40%. b is preferably from 1 to 70%, more preferably from 1 to 40%. c is preferably 0 to 70%, and more preferably 0 to 40%. d is preferably from 1 to 80%, more preferably from 30 to 70%. The proportion of e is preferably 0 to 50%, more preferably 0 to 20%. The ratio of f is preferably 0 to 40%, more preferably 0 to 10%.
폴리실록산 (A)는, 겔 투과 크로마토그래피에 의해 측정한 폴리스티렌 환산의 중량 평균 분자량이 100∼50000의 범위에 있는 것이 바람직하고, 500∼5000의 범위에 있는 것이 보다 바람직하다. 폴리실록산 (A)의 중량 평균 분자량이 상기 범위 내에 있으면, 본 조성물을 이용하여 봉지재를 제조할 때에 취급하기 쉽고, 또 본 조성물로부터 얻어지는 경화물은 광반도체 봉지재로서 충분한 강도를 갖는다.The polysiloxane (A) preferably has a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography in the range of 100 to 50000, more preferably 500 to 5000. When the weight average molecular weight of the polysiloxane (A) is within the above range, the sealant is easily handled when the sealant is produced using the composition, and the cured product obtained from the composition has sufficient strength as the optical semiconductor encapsulant.
폴리실록산 (A)의 제조 방법으로서는, 일본공개특허공보 평6-9659호, 일본공개특허공보 2003-183582호, 일본공개특허공보 2007-008996호, 일본공개특허공보 2007-106798호, 일본공개특허공보 2007-169427호 및 일본공개특허공보 2010-059359호 등에 기재된 공지의 방법, 예를 들면, 적당한 합성 용매 중에서 각 단위원이 되는 클로로실란이나 알콕시실란을 공(共)가수 분해하는 방법이나, 공가수 분해물을 알칼리 금속 촉매 등에 의해 평형화 반응하는 방법 등을 들 수 있다. 합성 용매로서 포화 탄화수소 화합물 (B)를 이용하여 폴리실록산 (A)를 합성하면, 얻어진 폴리실록산 (A) 함유 합성 용액에는 포화 탄화수소 화합물 (B)가 함유되어 있기 때문에, 그의 농축물을 이용하여 경화성 조성물을 조제하면, 포화 탄화수소 화합물 (B)를 첨가하는 조작을 생략할 수 있다.As a method for producing the polysiloxane (A), there are known methods for producing the polysiloxane (A) in JP-A 6-9659, JP-A 2003-183582, JP-A 2007-008996, JP-A 2007-106798, 2007-169427 and JP-A-2010-059359, for example, a method of co-hydrolyzing chlorosilane or alkoxysilane as each unit source in a suitable synthesis solvent, and a method of co- And a method in which the decomposition product is subjected to equilibration reaction with an alkali metal catalyst or the like. When the polysiloxane (A) is synthesized by using the saturated hydrocarbon compound (B) as the synthetic solvent, the resulting polysiloxane (A) -containing synthetic solution contains the saturated hydrocarbon compound (B) , The operation of adding the saturated hydrocarbon compound (B) can be omitted.
포화 탄화수소 화합물 (B)The saturated hydrocarbon compound (B)
본 발명의 경화성 조성물은, 폴리실록산 (A) 및 폴리실록산 (D)와 함께 포화 탄화수소 화합물 (B)를 함유함으로써, 택이 충분히 저감된 경화물을 형성할 수 있다.The curable composition of the present invention contains a saturated hydrocarbon compound (B) together with the polysiloxane (A) and the polysiloxane (D), whereby a cured product having sufficiently reduced tackiness can be formed.
포화 탄화수소 화합물 (B)로서는, n-펜탄(36℃), n-헥산(69℃), n-헵탄(98℃), n-옥탄(126℃) 등의 포화 지방족 탄화수소 화합물; Examples of the saturated hydrocarbon compound (B) include saturated aliphatic hydrocarbon compounds such as n-pentane (36 ° C), n-hexane (69 ° C), n-heptane (98 ° C) and n-octane (126 ° C);
메틸사이클로헥산(101℃), 사이클로헥산(81℃), 에틸사이클로헥산(130℃), 디메틸사이클로헥산(124℃), 사이클로헵탄(118℃), 사이클로옥탄(149℃) 등의 포화 지환식 탄화수소 화합물; Saturated alicyclic hydrocarbons such as methyl cyclohexane (101 DEG C), cyclohexane (81 DEG C), ethyl cyclohexane (130 DEG C), dimethyl cyclohexane (124 DEG C), cycloheptane (118 DEG C) compound;
을 들 수 있다(괄호 내는 1기압하에서의 비점을 나타냄). 이들 중에서도 포화 지환식 탄화수소 화합물이, 경화물의 택을 보다 효과적으로 저감할 수 있는 점에서 바람직하다.(Parentheses indicate the boiling point under 1 atm). Among these, a saturated alicyclic hydrocarbon compound is preferred because it can more effectively reduce the tack of the cured product.
포화 탄화수소 화합물 (B)의 비점은, 1기압하에서 50℃∼150℃인 것이 바람직하고, 보다 바람직하게는 70∼140℃, 더욱 바람직하게는 80∼130℃이다. 포화 탄화수소 화합물 (B)의 비점이 1기압하에서 50℃∼150℃이면, 경화물의 택을 보다 저감할 수 있다.The boiling point of the saturated hydrocarbon compound (B) is preferably 50 占 폚 to 150 占 폚, more preferably 70 to 140 占 폚, and even more preferably 80 to 130 占 폚 under 1 atm. If the boiling point of the saturated hydrocarbon compound (B) is 50 占 폚 to 150 占 폚 under 1 atm, the tack of the cured product can be further reduced.
본 발명의 경화성 조성물에 있어서, 포화 탄화수소 화합물 (B)의 함유 비율은, 0.1∼5000ppm인 것이 바람직하고, 보다 바람직하게는 0.1∼1000ppm, 더욱 바람직하게는 0.1∼100ppm이다. 포화 탄화수소 화합물 (B)의 함유 비율이 상기 범위 내이면, 경화물의 택을 보다 효과적으로 저감할 수 있다.In the curable composition of the present invention, the content ratio of the saturated hydrocarbon compound (B) is preferably 0.1 to 5000 ppm, more preferably 0.1 to 1000 ppm, and still more preferably 0.1 to 100 ppm. When the content of the saturated hydrocarbon compound (B) is within the above range, the curing product can be more effectively reduced.
폴리실록산Polysiloxane (D) (D)
폴리실록산 (D)는, 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산이다. 즉 폴리실록산 (D)는, 1분자당 적어도 2개의 Si-H기(하이드로실릴기)를 갖는다. 폴리실록산 (D)는 폴리실록산 (A)에 대한 가교제이며, 폴리실록산 (A)와의 하이드로실릴화 반응에 의해 경화물을 형성한다.The polysiloxane (D) is a polysiloxane having at least two silicon-bonded hydrogen atoms per molecule. That is, the polysiloxane (D) has at least two Si-H groups (hydrosilyl groups) per molecule. The polysiloxane (D) is a crosslinking agent for the polysiloxane (A) and forms a cured product by a hydrosilylation reaction with the polysiloxane (A).
폴리실록산 (D)로서는, 종래의 하이드로실릴계 폴리실록산 조성물에 있어서 가교제로서 사용되고 있는, 1분자당 적어도 2개의 규소 원자 결합 수소 원자를 갖는 폴리실록산이면 좋다.The polysiloxane (D) may be a polysiloxane having at least two silicon-bonded hydrogen atoms per molecule, which is used as a crosslinking agent in a conventional hydrosilyl-based polysiloxane composition.
전술한 바와 같이, 폴리실록산 (D)는 폴리실록산 (A)와 동일한 화합물이라도 좋다.As described above, the polysiloxane (D) may be the same compound as the polysiloxane (A).
폴리실록산 (D)의 구체예로서는, 특허문헌 1∼3에 기재된 오르가노하이드로젠폴리실록산 등을 들 수 있다.Specific examples of the polysiloxane (D) include organohydrogenpolysiloxanes described in Patent Documents 1 to 3 and the like.
폴리실록산 (D)는, 예를 들면, 페닐트리메톡시실란, 디페닐디메톡시실란 등의 알콕시실란과, 1,1,3,3-테트라메틸디실록산 등의 하이드로젠실록산을 공지의 방법에 의해 적당한 합성 용매 중에서 반응시킴으로써 얻을 수 있다. 합성 용매로서 포화 탄화수소 화합물 (B)를 이용하여 폴리실록산 (D)를 합성하면, 얻어진 폴리실록산 (D) 함유 합성 용액에는 포화 탄화수소 화합물 (B)가 함유되어 있기 때문에, 그의 농축물을 이용하여 경화성 조성물을 조제하면, 포화 탄화수소 화합물 (B)를 첨가하는 조작을 생략할 수 있다.The polysiloxane (D) can be produced, for example, by reacting an alkoxysilane such as phenyltrimethoxysilane or diphenyldimethoxysilane with a hydrogen siloxane such as 1,1,3,3-tetramethyldisiloxane by a known method In a suitable synthetic solvent. When the polysiloxane (D) is synthesized by using the saturated hydrocarbon compound (B) as the synthetic solvent, the resulting polysiloxane (D) -containing synthetic solution contains the saturated hydrocarbon compound (B) , The operation of adding the saturated hydrocarbon compound (B) can be omitted.
본 발명의 경화성 조성물에 있어서의 폴리실록산 (D)의 함유량으로서는, 폴리실록산 (A) 중의 알케닐기 양에 대한 폴리실록산 (D) 중의 규소 원자 결합 수소 원자량의 몰비가 0.1∼5가 되는 양인 것이 바람직하고, 보다 바람직하게는 0.5∼2, 더욱 바람직하게는 0.7∼1.4가 되는 양이다. 폴리실록산 (D)의 함유량이 상기 범위 내이면, 조성물의 경화는 충분히 진행하고, 또한, 얻어지는 경화물은 충분한 내열성을 갖는다.The content of the polysiloxane (D) in the curable composition of the present invention is preferably such that the molar ratio of the amount of silicon atom-bonded hydrogen atoms in the polysiloxane (D) to the amount of alkenyl groups in the polysiloxane (A) is 0.1 to 5, Preferably 0.5 to 2, and more preferably 0.7 to 1.4. When the content of the polysiloxane (D) is within the above range, the curing of the composition proceeds sufficiently, and the obtained cured product has sufficient heat resistance.
하이드로실릴화Hydrosilylation 반응용 촉매 (C) The reaction catalyst (C)
하이드로실릴화 반응용 촉매 (C)는, 하이드로실릴화 반응을 촉진하기 위한 촉매이다.The hydrosilylation reaction catalyst (C) is a catalyst for promoting the hydrosilylation reaction.
하이드로실릴화 반응용 촉매 (C)로서는, 종래의 하이드로실릴계 폴리실록산 조성물에 있어서 하이드로실릴화 반응용 촉매로서 사용되고 있는 촉매이면 특별히 제한되는 일 없이 사용할 수 있다.The hydrosilylation reaction catalyst (C) can be used without particular limitation, as long as it is a catalyst that is used as a hydrosilylation reaction catalyst in a conventional hydrosilyl-based polysiloxane composition.
하이드로실릴화 반응용 촉매 (C)의 구체예로서는, 백금계 촉매, 로듐계 촉매, 팔라듐계 촉매를 들 수 있다. 이들 중에서, 본 조성물의 경화 촉진의 관점에서 백금계 촉매가 바람직하다. 백금계 촉매로서는, 백금-알케닐실록산 착체 등을 들 수 있다. 알케닐실록산으로서는, 예를 들면, 1,3-디비닐-1,1,3,3-테트라메틸디실록산, 1,3,5,7-테트라메틸-1,3,5,7-테트라비닐사이클로테트라실록산 등을 들 수 있다. 특히, 착체의 안정성의 관점에서, 1,3-디비닐-1,1,3,3-테트라메틸디실록산이 바람직하다.Specific examples of the hydrosilylation reaction catalyst (C) include platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts. Among these, platinum-based catalysts are preferable from the viewpoint of promoting curing of the composition. Platinum-based catalysts include platinum-alkenylsiloxane complexes and the like. Examples of the alkenylsiloxane include 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinyl Cyclotetrasiloxane, and the like. Particularly, from the viewpoint of stability of the complex, 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is preferable.
본 발명의 경화성 조성물에 있어서의 하이드로실릴화 반응용 촉매 (C)는, 폴리실록산 (A)와 폴리실록산 (D)와의 하이드로실릴화 반응이 현실적으로 진행되는 양, 예를 들면 경화성 조성물 중 0.01ppm∼10000ppm을 이용한다.The catalyst (C) for the hydrosilylation reaction in the curable composition of the present invention is an amount such that the hydrosilylation reaction between the polysiloxane (A) and the polysiloxane (D) proceeds practically, for example, 0.01 ppm to 10000 ppm .
첨가제additive
본 발명의 경화성 조성물은, 본 발명의 목적이 달성되는 한, 필요에 따라서, 예를 들면, 흄드 실리카, 석영 분말 등의 미립자 형상 실리카, 산화 티탄, 산화 아연 등의 무기 충전제, 에티닐사이클로헥산올, 사이클로-테트라메틸테트라비닐테트라실록산 등의 반응 지연제, 디페닐비스(디메틸비닐실록시)실란, 페닐트리스(디메틸비닐실록시)실란, 디페닐비스(디메틸하이드록시실록시)실란 등의 희석제, 안료, 난연제, 내열제, 산화 방지제 등의 첨가제를 함유할 수 있다.As long as the object of the present invention is achieved, the curable composition of the present invention may contain, for example, inorganic fillers such as fine particulate silica such as fumed silica and quartz powder, titanium oxide, zinc oxide, , A reaction retarder such as cyclo-tetramethyltetravinyltetrasiloxane, a diluent such as diphenylbis (dimethylvinylsiloxy) silane, phenyltris (dimethylvinylsiloxy) silane or diphenylbis (dimethylhydroxysiloxy) silane , Pigments, flame retardants, heat resistance agents, antioxidants, and the like.
조성물의 제조 방법Method for producing a composition
본 발명의 경화성 조성물은, 상기 각 성분, 즉 폴리실록산 (A), 포화 탄화수소 화합물 (B), 폴리실록산 (D), 필요에 따라서 하이드로실릴화 반응용 촉매 (C) 및 첨가제를 믹서 등 공지의 방법에 의해 균일하게 혼합함으로써 제조할 수 있다.The curable composition of the present invention is obtained by mixing the above components, that is, the polysiloxane (A), the saturated hydrocarbon compound (B), the polysiloxane (D), the catalyst for hydrosilylation reaction (C) And then mixing them uniformly.
또한, 폴리실록산 (A)나 폴리실록산 (D) 등의 폴리실록산을, 포화 탄화수소 화합물 (B)를 합성 용매로서 이용하여 합성하고, 얻어진 폴리실록산 함유 합성 용액의 농축물을, 하이드로실릴화 반응용 촉매 (C) 등의 다른 성분에 혼합함으로써 제조할 수도 있다.It is also possible to synthesize a polysiloxane such as polysiloxane (A) or polysiloxane (D) by using a saturated hydrocarbon compound (B) as a synthesis solvent, and to concentrate the obtained polysiloxane-containing synthesis solution in a hydrosilylation reaction catalyst (C) , And the like.
본 발명의 경화성 조성물의 25℃에 있어서의 점도로서는, 바람직하게는 1∼1000000mPa·s이고, 보다 바람직하게는 10∼10000mPa·s이다. 점도가 이 범위 내이면, 본 조성물의 조작성이 향상된다.The viscosity of the curable composition of the present invention at 25 占 폚 is preferably 1 to 1000000 mPa 占 퐏, and more preferably 10 to 10000 mPa 占 퐏. When the viscosity is within this range, the operability of the composition is improved.
본 발명의 경화성 조성물은, 1액으로서 조제할 수도 있고, 2액으로 나누어 조제하여, 사용시에 2액을 혼합하여 사용할 수도 있다. 필요에 따라서, 아세틸렌 알코올 등의 경화 억제제를 소량 첨가해도 좋다.The curable composition of the present invention may be prepared as a single solution, or may be prepared by dividing into two solutions, and two solutions may be mixed at the time of use. If necessary, a small amount of a curing inhibitor such as acetylene alcohol may be added.
<경화물><Hard goods>
본 발명의 경화성 조성물을 경화함으로써 경화물을 얻을 수 있다.A cured product can be obtained by curing the curable composition of the present invention.
본 발명의 경화성 조성물을 경화하는 방법으로서는, 예를 들면, 경화성 조성물을 기판 상에 도포한 후, 100∼180℃에서 1∼13시간 가열하는 방법을 들 수 있다.Examples of the method of curing the curable composition of the present invention include a method of applying the curable composition on a substrate and then heating at 100 to 180 캜 for 1 to 13 hours.
<광반도체 장치><Optical Semiconductor Device>
본 발명의 광반도체 장치는, 반도체 발광 소자와, 당해 반도체 발광 소자를 피복하는 상기 경화물을 갖는다. 본 발명의 광반도체 장치는, 반도체 발광 소자에 상기 경화성 조성물을 피복하여, 그 조성물을 경화함으로써 얻어진다. 경화성 조성물을 경화하는 방법은 전술한 바와 같다.The optical semiconductor device of the present invention has a semiconductor light emitting element and the cured product covering the semiconductor light emitting element. The optical semiconductor device of the present invention is obtained by covering the curable composition with a semiconductor light emitting element and curing the composition. The method of curing the curable composition is as described above.
광반도체 장치로서는, LED(Light Emitting Diode, 발광 다이오드) 및 LD(Laser Diode) 등을 들 수 있다.Examples of the optical semiconductor device include an LED (Light Emitting Diode) and an LD (Laser Diode).
도 1은, 본 발명의 광반도체 장치의 일 구체예의 개략도이다. 광반도체 장치(1)는, 전극(6)과, 전극(6) 상에 설치되고, 와이어(7)에 의해 전극(6)과 전기적으로 접속된 반도체 발광 소자(2)와, 반도체 발광 소자(2)를 수용하도록 배치된 리플렉터(3)와, 리플렉터(3) 내에 충전되어, 반도체 발광 소자(2)를 봉지하는 봉지재(4)를 갖는다. 봉지재(4)는, 본 발명의 경화성 조성물을 경화하여 얻어진다. 봉지재(4) 중에는, 실리카나 형광체 등의 입자(5)가 분산되어 있다.1 is a schematic view of one embodiment of the optical semiconductor device of the present invention. The optical semiconductor device 1 includes an
전술한 바와 같이, 본 발명의 경화성 조성물을 경화하여 얻어지는 봉지재(경화물)의 택은 작기 때문에, 봉지재에 먼지 등이 부착할 우려가 작고, 또한, 제품의 선별에 사용하는 파츠 피더에서, 패키지끼리가 점착될 우려는 작다.As described above, since the tackiness of the encapsulating material (cured product) obtained by curing the curable composition of the present invention is small, there is little concern that dust or the like adheres to the encapsulating material, and in the part feeder used for sorting products, It is unlikely that the packages will stick together.
(실시예)(Example)
1. One. 폴리실록산의Polysiloxane 합성 synthesis
1-1. 구조 해석1-1. Structural analysis
폴리실록산의 구조는, 29Si NMR 및 13C NMR로 해석했다.The structure of the polysiloxane was analyzed by 29 Si NMR and 13 C NMR.
1-2. 중량 평균 분자량1-2. Weight average molecular weight
중량 평균 분자량(Mw)은, 겔 투과 크로마토그래피(GPC)에 의해 하기 조건으로 측정하여, 폴리스티렌 환산값으로서 구했다.The weight average molecular weight (Mw) was determined by gel permeation chromatography (GPC) under the following conditions and was found as a polystyrene reduced value.
장치 : HLC-8120C(토소사 제작)Device: HLC-8120C (manufactured by Toso Co., Ltd.)
칼럼 : TSK-gel MultiporeHXL-M(토소사 제작)Column: TSK-gel MultiporeHXL-M (manufactured by Toso Co., Ltd.)
용리액 : THF, 유량 0.5mL/분, 부하량 5.0%, 100μLEluent: THF, flow rate 0.5 mL / min, loading 5.0%, 100 μL
1-3.1-3. 폴리실록산의Polysiloxane 합성 synthesis
[합성예 1] 폴리실록산 (A-1)의 합성[Synthesis Example 1] Synthesis of polysiloxane (A-1)
교반기, 환류 냉각관, 투입구, 온도계 부착 4구 플라스크에 1,3-디비닐-1,1,3,3-테트라메틸디실록산 37.3g, 페닐트리메톡시실란 234g, 디페닐디메톡시실란 97.7g, 물 55g, 트리플루오로메탄술폰산 0.3g 및 중합 용매인 메틸사이클로헥산 146g을 투입하여 혼합하고, 1시간 가열 환류했다. 냉각 후, 하층을 분리 제거하고, 상층인 메틸사이클로헥산 용액층을 물세정했다. 물세정한 메틸사이클로헥산 용액층에 물 30g과 수산화 칼륨 0.3g과 3-글리시독시프로필메틸디메톡시실란 4.4g을 더하여 1시간 가열 환류했다. 이어서, 메탄올을 증류 제거하여, 과잉의 물을 공비탈수로 제거했다. 이어서 4시간 가열 환류했다. 반응 후의 메틸사이클로헥산 용액은 냉각 후, 아세트산 0.3g으로 중화하여 물세정했다. 물 제거 후, 메틸사이클로헥산을 감압하에 증류 제거하여, 메틸사이클로헥산 용액을 농축하고, 평균 단위식이, (ViMe2SiO1 /2)20(PhSiO3/2)59(Ph2SiO2 /2)20(EpMeSiO2 /2)1(Vi는 비닐기, Me는 메틸기, Ph는 페닐기, Ep는 글리시독시프로필기를 나타냄)로 나타나는 폴리실록산 (A-1)을 함유하는 메틸사이클로헥산 용액을 얻었다. 이 폴리실록산 (A-1)의 중량 평균 분자량은 1600이었다.Necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer was charged with 37.3 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 234 g of phenyltrimethoxysilane, 97.7 g of diphenyldimethoxysilane 55 g of water, 0.3 g of trifluoromethanesulfonic acid, and 146 g of methylcyclohexane as a polymerization solvent were added and mixed, and the mixture was heated under reflux for 1 hour. After cooling, the lower layer was separated and removed, and the upper layer of the methyl cyclohexane solution layer was water-filtered. To the water-washed methylcyclohexane solution layer were added 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxysilane, and the mixture was heated under reflux for 1 hour. Then, the methanol was distilled off, and excess water was removed by azeotropic dehydration. The mixture was heated under reflux for 4 hours. After the reaction, the methylcyclohexane solution was cooled, neutralized with 0.3 g of acetic acid, and then water-filtered. After removal of water, evaporated methylcyclohexane under reduced pressure, methylcyclohexyl concentrating the hexane solution, the average unit expression, and (ViMe 2 SiO 1/2) 20 (PhSiO 3/2) 59 (
[합성예 2] 폴리실록산 (A-2)의 합성[Synthesis Example 2] Synthesis of polysiloxane (A-2)
교반기, 환류 냉각관, 투입구, 온도계 부착 4구 플라스크에 1,3-디비닐-1,1,3,3-테트라메틸디실록산 37.3g, 페닐트리메톡시실란 234g, 디페닐디메톡시실란 97.7g, 물 55g, 트리플루오로메탄술폰산 0.3g 및 중합 용매인 톨루엔 146g을 투입하여 혼합하고, 1시간 가열 환류했다. 냉각 후, 하층을 분리 제거하고, 상층인 톨루엔 용액층을 물세정했다. 물세정한 톨루엔 용액층에 물 30g과 수산화 칼륨 0.3g과 3-글리시독시프로필메틸디메톡시실란 4.4g을 더하여 1시간 가열 환류했다. 이어서, 메탄올을 증류 제거하여, 과잉의 물을 공비탈수로 제거했다. 이어서 4시간 가열 환류했다. 반응 후의 톨루엔 용액은 냉각 후, 아세트산 0.3g으로 중화하여 물세정했다. 물 제거 후, 톨루엔을 감압하에 증류 제거하여, 톨루엔 용액을 농축하고, 평균 단위식이, (ViMe2SiO1 /2)20(PhSiO3 /2)59(Ph2SiO2 /2)20(EpMeSiO2 /2)1(Vi는 비닐기, Me는 메틸기, Ph는 페닐기, Ep는 글리시독시프로필기를 나타냄)로 나타나는 폴리실록산 (A-2)를 함유하는 톨루엔 용액을 얻었다. 이 폴리실록산 (A-2)의 중량 평균 분자량은 1600이었다.Necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer was charged with 37.3 g of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 234 g of phenyltrimethoxysilane, 97.7 g of diphenyldimethoxysilane , 55 g of water, 0.3 g of trifluoromethanesulfonic acid and 146 g of toluene as a polymerization solvent were added and mixed, and the mixture was heated under reflux for 1 hour. After cooling, the lower layer was separated and removed, and the upper toluene solution layer was water-filtered. To the water-washed toluene solution layer were added 30 g of water, 0.3 g of potassium hydroxide and 4.4 g of 3-glycidoxypropylmethyldimethoxysilane, and the mixture was heated under reflux for 1 hour. Then, the methanol was distilled off, and excess water was removed by azeotropic dehydration. The mixture was heated under reflux for 4 hours. After the reaction, the toluene solution was cooled, neutralized with 0.3 g of acetic acid, and water-filtered. After removal of water, to distil off the toluene under reduced pressure to concentrate the toluene solution, and the average unit expression, (ViMe 2 SiO 1/2 ) 20 (PhSiO 3/2) 59 (
[합성예 3] 폴리실록산 (D-1)의 합성[Synthesis Example 3] Synthesis of polysiloxane (D-1)
교반기, 환류 냉각관, 투입구, 온도계 부착 4구 플라스크에 디페닐디메톡시실란 220g과 트리플루오로메탄술폰산 0.6g을 투입하여 혼합하고, 1,1,3,3-테트라메틸디실록산 60.5g을 더하여 교반하면서 아세트산 108g을 30분간 걸쳐 적하했다. 적하 종료 후, 혼합액을 교반하면서 50℃로 승온하여 3시간 반응시켰다. 이어서, 80℃까지 승온하여 2시간 반응시켰다. 반응 종료 후, 실온까지 냉각한 후, 톨루엔과 물을 더하고, 잘 혼합하여 정치(靜置)하고, 수층을 분리 제거했다. 상층인 톨루엔 용액층을 3회 물세정한 후, 감압 농축하여, 하기식 (2)에 나타내는 폴리실록산 (D-1)을 얻었다.220 g of diphenyldimethoxysilane and 0.6 g of trifluoromethanesulfonic acid were added to a four-necked flask equipped with a stirrer, a reflux condenser, an inlet and a thermometer, and 60.5 g of 1,1,3,3-tetramethyldisiloxane was added thereto While stirring, 108 g of acetic acid was added dropwise over 30 minutes. After completion of dropwise addition, the mixture was heated to 50 캜 while stirring, and reacted for 3 hours. Subsequently, the temperature was raised to 80 DEG C and the reaction was carried out for 2 hours. After completion of the reaction, the reaction mixture was cooled to room temperature, toluene and water were added, mixed well and allowed to stand, and the aqueous layer was separated and removed. The toluene solution layer as the upper layer was washed with water three times and then concentrated under reduced pressure to obtain a polysiloxane (D-1) represented by the following formula (2).
[합성예 4] 폴리실록산 (A-3)의 합성[Synthesis Example 4] Synthesis of polysiloxane (A-3)
교반기, 환류 냉각관, 투입구, 온도계 부착 4구 플라스크에 디페닐디메톡시실란 81g과 트리플루오로메탄술폰산 0.2g을 투입하여 혼합하고, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 62g을 더하여 교반하면서 아세트산 60g을 30분간 걸쳐 적하했다. 적하 종료 후, 혼합액을 교반하면서 50℃로 승온하여 3시간 반응시켰다. 반응 종료후, 실온까지 냉각한 후, 톨루엔과 물을 더하고, 잘 혼합하여 정치하고, 수층을 분리 제거했다. 상층인 톨루엔 용액층을 3회 물세정한 후, 감압 농축하여, 디페닐비스(디메틸비닐실록시)실란(이하 폴리실록산 (A-3)이라고 씀)을 얻었다.81 g of diphenyldimethoxysilane and 0.2 g of trifluoromethanesulfonic acid were added to a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, followed by mixing to obtain 1,3-divinyl-1,1,3,3-tetra 62 g of methyldisiloxane were added and 60 g of acetic acid was added dropwise over 30 minutes while stirring. After completion of dropwise addition, the mixture was heated to 50 캜 while stirring, and reacted for 3 hours. After the completion of the reaction, the mixture was cooled to room temperature, toluene and water were added, mixed well, and the aqueous layer was separated and removed. The toluene solution layer as the upper layer was washed with water three times and then concentrated under reduced pressure to obtain diphenylbis (dimethylvinylsiloxy) silane (hereinafter referred to as polysiloxane (A-3)).
2. 경화성 조성물의 조제2. Preparation of a curable composition
2-1. 2-1. 메틸사이클로헥산의Of methylcyclohexane 함유 비율 Content ratio
메틸사이클로헥산 및 톨루엔의 함유 비율은, 가스 칼럼 크로마토그래피(GC)에 의해 하기 조건으로 측정했다.The content ratio of methylcyclohexane and toluene was measured by gas column chromatography (GC) under the following conditions.
장치 : Agilent Technologies 7890ADevice: Agilent Technologies 7890A
칼럼 : DB-1701Column: DB-1701
검출기 : FID.Detector: FID.
2-2. 경화성 조성물의 조제2-2. Preparation of curable composition
[실시예 1][Example 1]
합성예 1에서 얻은 폴리실록산 (A-1)의 메틸사이클로헥산 용액을 농축하여, 폴리실록산 (A-1) 함유 농축액(1)을 얻었다. 폴리실록산 (A-1) 함유 농축액(1), 폴리실록산 (A-3), 하기 C-1, 하기 D-1 및 하기 E-1 성분을 하기표 1에 나타내는 비율로 혼합하여, 실시예 1의 경화성 조성물을 얻었다. 경화성 조성물 중에 포함되는 메틸사이클로헥산(B 성분)은, 합성예 1의 중합 용매 유래이다.The methyl cyclohexane solution of the polysiloxane (A-1) obtained in Synthesis Example 1 was concentrated to obtain a concentrate (1) containing polysiloxane (A-1). The polysiloxane (A-1) containing concentrate (1), polysiloxane (A-3), the following C-1, the following D-1 and the following E-1 component were mixed in the ratios shown in the following Table 1, A composition was obtained. The methylcyclohexane (component B) contained in the curable composition was derived from the polymerization solvent of Synthesis Example 1. [
[실시예 2 및 3][Examples 2 and 3]
합성예 1에서 얻은 폴리실록산 (A-1)의 메틸사이클로헥산 용액을 농축하고, 실시예 1의 폴리실록산 (A-1) 함유 농축액(1)로부터 농축도가 높은 폴리실록산 (A-1) 함유 농축액(2)와, 더욱 농축도가 높은 폴리실록산 (A-1) 함유 농축액(3)을 얻었다. 폴리실록산 (A-1) 함유 농축액(1) 대신에 폴리실록산 (A-1) 함유 농축액(2)를 이용한 것 이외는 실시예 1과 동일한 순서로, 하기표 1에 나타내는 비율로 각 성분을 혼합하여, 실시예 2의 경화성 조성물을 얻었다. 폴리실록산 (A-1) 함유 농축액(1) 대신에 폴리실록산 (A-1) 함유 농축액(3)을 이용한 것 이외는 실시예 1과 동일한 순서로, 하기표 1에 나타내는 비율로 각 성분을 혼합하여, 실시예 3의 경화성 조성물을 얻었다. 각 경화성 조성물 중에 포함되는 메틸사이클로헥산(B 성분)은, 합성예 1의 중합 용매 유래이다.The methylcyclohexane solution of the polysiloxane (A-1) obtained in Synthesis Example 1 was concentrated to obtain a
[비교예 1][Comparative Example 1]
합성예 2에서 얻은 폴리실록산 (A-2)의 톨루엔 용액으로부터 톨루엔을 증류 제거하여, 폴리실록산 (A-2)를 얻었다. 하기표 1에 나타내는 비율로 각 성분을 혼합하여, 메틸사이클로헥산(B 성분)을 함유하지 않은 비교예 1의 경화성 조성물을 얻었다.Toluene was distilled off from the toluene solution of the polysiloxane (A-2) obtained in Synthesis Example 2 to obtain a polysiloxane (A-2). Each component was mixed at the ratios shown in Table 1 below to obtain a curable composition of Comparative Example 1 containing no methylcyclohexane (component B).
표 1 중의 각 성분의 상세는 이하와 같다.Details of each component in Table 1 are as follows.
C-1 : 백금과 1,3-디비닐-1,1,3,3-테트라메틸디실록산과의 착체(백금 금속량 4질량%)C-1: Complex of platinum with 1,3-divinyl-1,1,3,3-tetramethyldisiloxane (amount of platinum metal: 4% by mass)
E-1 : 에티닐사이클로헥산올E-1: Ethynyl cyclohexanol
3. 경화성 조성물의 평가3. Evaluation of the curable composition
실시예 1∼3 및 비교예 1의 경화성 조성물에 대해서, 하기, 3-1∼3-3의 수법으로, 평가했다. 평가 결과를 상기표 1에 나타낸다.The curable compositions of Examples 1 to 3 and Comparative Example 1 were evaluated by the following methods 3-1 to 3-3. The evaluation results are shown in Table 1 above.
3-1. 점도3-1. Viscosity
경화성 조성물의 점도를, E형 점도계를 이용하여 25℃에서 측정했다.The viscosity of the curable composition was measured at 25 캜 using an E-type viscometer.
3-2. 경도3-2. Hardness
경화성 조성물을 테플론(상표명)의 평판에 2㎜ 두께의 테두리를 끼워, 테두리의 높이가 되도록 도포하고, 150℃의 열풍 순환식 오븐에서 5시간 가열함으로써 세로 50㎜, 가로 50㎜, 높이 1㎜의 경화물을 제작했다. 이 경화물의 단단함을 JIS K6253에 규정된 타입 D 듀로미터에 의해 측정했다.The curable composition was coated on a flat plate of Teflon (trade name) with a 2 mm thick rim to have a rim height, and heated in a hot air circulating oven at 150 캜 for 5 hours to prepare a 50 mm long, 50 mm wide, A cured product was produced. The hardness of the cured product was measured by a Type D durometer specified in JIS K6253.
3-3-1. 택(촉진에 의한 평가)3-3-1. Tack (evaluation by facilitation)
경화성 조성물을 테플론의 평판에 2㎜ 두께의 테두리를 끼워, 테두리의 높이가 되도록 도포하고, 150℃의 열풍 순환식 오븐에서 5시간 가열함으로써 세로 50㎜, 가로 50㎜, 높이 1㎜의 경화물을 제작했다. 이 경화물의 표면을 손가락으로 만져 그의 택에 대해서, 하기에 나타내는 기준으로 평가했다.The curable composition was coated on a flat plate of Teflon with a rim of 2 mm in thickness so as to have a rim height and heated in a hot air circulating oven at 150 캜 for 5 hours to obtain a cured product having a length of 50 mm, . The surface of the cured product was touched with a finger, and its tack was evaluated based on the following criteria.
A : 끈적임 없음A: No stickiness
B : 끈적임 있음B: Sticky
3-3-2. 택(택 시험 장치에 의한 평가)3-3-2. Tack (Evaluation by tack testing device)
경화성 조성물을 평활 기판에 100㎛ 두께가 되도록 도포하고, 150℃의 열풍 순환식 오븐에 5시간 가열함으로써, 경화물을 제작했다. 얻어진 경화물의 택을 택 시험 장치로 측정했다. 측정 방법의 상세는 이하와 같다.The curable composition was coated on a smooth substrate to a thickness of 100 mu m and heated in a hot air circulating oven at 150 DEG C for 5 hours to prepare a cured product. The obtained cured product was measured by a tester. Details of the measurement method are as follows.
장치명 : TAC-1000(주식회사 레스카 제작)Device name: TAC-1000 (manufactured by Resca Co., Ltd.)
단자 : SUS제 10㎜φTerminal: SUS 10mmφ
단자 온도:25℃Terminal temperature: 25 ℃
압입압 : 0.05MPaSuction pressure: 0.05 MPa
압입 시간 : 60초간Indentation time: 60 seconds
Claims (8)
포화 탄화수소 화합물 (B)의 비점이, 1기압하 50℃∼150℃인 경화성 조성물.The method according to claim 1,
Wherein the boiling point of the saturated hydrocarbon compound (B) is 50 占 폚 to 150 占 폚 under 1 atm.
경화성 조성물의 총 중량에 기초하는, 포화 탄화수소 화합물 (B)의 함유 비율이, 0.1∼5000ppm인 경화성 조성물.The method according to claim 1,
Wherein the content ratio of the saturated hydrocarbon compound (B) based on the total weight of the curable composition is 0.1 to 5000 ppm.
포화 탄화수소 화합물 (B)가, 포화 지환식 탄화수소 화합물인 경화성 조성물.The method according to claim 1,
Wherein the saturated hydrocarbon compound (B) is a saturated alicyclic hydrocarbon compound.
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