[go: up one dir, main page]

KR101587678B1 - Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same - Google Patents

Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same Download PDF

Info

Publication number
KR101587678B1
KR101587678B1 KR1020120117603A KR20120117603A KR101587678B1 KR 101587678 B1 KR101587678 B1 KR 101587678B1 KR 1020120117603 A KR1020120117603 A KR 1020120117603A KR 20120117603 A KR20120117603 A KR 20120117603A KR 101587678 B1 KR101587678 B1 KR 101587678B1
Authority
KR
South Korea
Prior art keywords
photo
layer
thermal conversion
parts
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120117603A
Other languages
Korean (ko)
Other versions
KR20140051524A (en
Inventor
김장순
김상환
최태이
조명현
김대현
Original Assignee
(주)엘지하우시스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)엘지하우시스 filed Critical (주)엘지하우시스
Priority to KR1020120117603A priority Critical patent/KR101587678B1/en
Publication of KR20140051524A publication Critical patent/KR20140051524A/en
Application granted granted Critical
Publication of KR101587678B1 publication Critical patent/KR101587678B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 발명은 광열변환필름 및 이를 이용한 OLED(Organic Light Emitting Diode)용 전사 필름에 관한 것으로, 보다 상세하게는 기재층과 광열변환층이 일체화된 광열변환필름을 포함함으로써 두께 정밀도가 높고, 광열변환층의 손상 가능성이 낮아 OLED 생산성을 향상시킬 수 있는 광열변환필름 및 이를 이용한 OLED용 전사 필름에 관한 것이다.The present invention relates to a photothermal conversion film and a transfer film for an OLED (Organic Light Emitting Diode) using the same, and more particularly, to a photovoltaic conversion film comprising a photothermal conversion film in which a base layer and a photothermal conversion layer are integrated, Which can improve the OLED productivity, and a transfer film for an OLED using the same.

Description

기재층과 광열변환층이 일체화된 광열변환필름 및 이를 이용한 OLED용 전사 필름 {LIGHT TO HEAT CONVERSION FILM WITH INTEGRATED BASE-LAYER AND LIGHT TO HEAT CONVERSION LAYER AND TRANSFER FILM FOR OLED USING THE SAME}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photo-thermal conversion film having a substrate layer and a photo-thermal conversion layer integrated with each other, and a transfer film for an OLED using the same. BACKGROUND ART [0002]

본 발명은 광열변환필름 및 이를 이용한 OLED(Organic Light Emitting Diode)용 전사 필름에 관한 것으로, 보다 상세하게는 기재층과 광열변환층이 일체화된 광열변환필름을 포함함으로써 두께 정밀도가 높고, 광열변환층의 손상 가능성이 낮아 OLED 생산성을 향상시킬 수 있는 광열변환필름 및 이를 이용한 OLED용 전사 필름에 관한 것이다.
The present invention relates to a photothermal conversion film and a transfer film for an OLED (Organic Light Emitting Diode) using the same, and more particularly, to a photovoltaic conversion film comprising a photothermal conversion film in which a base layer and a photothermal conversion layer are integrated, Which can improve the OLED productivity, and a transfer film for an OLED using the same.

디스플레이에 있어서, OLED(Organic Light Emitting Diode)는 LCD(Liquid Crystal Display)에 비하여 자체 발광성, 고휘도, 빠른 응답속도 등의 여러 장점이 있어, 많은 연구가 이루어지고 있다. In OLED (Organic Light Emitting Diode), OLED (Organic Light Emitting Diode) has many advantages such as self-luminous property, high luminance, fast response speed, etc., compared with LCD (Liquid Crystal Display).

OLED에는 유기발광 물질이 포함된다. 이러한 유기발광 물질의 경우 종래에는 주로 증착 방법이 이용되었다. 그러나, 증착 방법의 경우, 형성되는 유기발광 물질층의 균질화가 어려운 문제점이 있었다. OLEDs include organic light emitting materials. In the case of such an organic luminescent material, a deposition method has been mainly used. However, in the case of the deposition method, it has been difficult to homogenize the layer of the organic light emitting material to be formed.

최근에는 전사 필름에 광열변환층과 유기발광물질층을 형성하고, 레이저 등으로 광을 조사할 때, 광열변환층에 포함된 물질이 광을 흡수하여 열을 방출하는 과정을 통하여 유기발광물질층이 기판에 전사되는 열전사 방법이 이용되고 있다. 열전사 방법의 경우, 증착 방법에 비하여 유기발광물질층의 균질화가 용이한 장점이 있다. In recent years, a photothermal conversion layer and an organic light emitting material layer are formed on a transfer film, and when a light is irradiated with a laser or the like, a material contained in the photothermal conversion layer absorbs light to emit heat, A thermal transfer method is used which is transferred onto a substrate. In the case of the thermal transfer method, the organic light emitting material layer can be homogenized more easily than the vapor deposition method.

그런데, 기존의 전사 필름은 도 1에 나타낸 바와 같이 기재층(10) 상에 광열변환층(20)을 별도로 두고 있었는바, 이러한 경우 층이 많아지므로 두께 정밀도가 낮아질 가능성이 높고, 카본블랙이 함유된 광열변환층(20) 상에 중간층(30)을 코팅할 경우, 용제로 인하여 광열변환층이 손상될 가능성이 높다는 문제가 있었다.However, in the conventional transfer film, as shown in Fig. 1, the photo-thermal conversion layer 20 is separately formed on the base layer 10. In this case, since there are many layers, there is a high possibility that the thickness precision is lowered, When the intermediate layer 30 is coated on the photo-thermal conversion layer 20, there is a high possibility that the photo-thermal conversion layer is damaged due to the solvent.

본 발명에 관련된 배경기술로는 대한민국 공개특허공보 제10-2011-0069708호(2011.06.23. 공개)에 개시된 광열 변환 시트, 그것을 사용한 유기 전계 발광 소재 시트, 및 유기 전계 발광 장치의 제조 방법이 있다.
Background art related to the present invention is a photo-thermal conversion sheet disclosed in Korean Patent Laid-Open Publication No. 10-2011-0069708 (published on June 23, 2011), an organic electroluminescent material sheet using the same, and a method of manufacturing an organic electroluminescent device .

본 발명의 목적은 상기와 같은 문제점을 해결하기 위하여, 기재층과 광열변환층이 일체화된 광열변환필름을 포함함으로써 두께 정밀도가 높고, 광열변환층의 손상 가능성이 낮아 OLED 생산성을 향상시킬 수 있는 광열변환필름 및 이를 이용한 OLED용 전사 필름을 제공하는 것이다.
An object of the present invention is to solve the above-mentioned problems, and it is an object of the present invention to provide a light-heat conversion film in which a base layer and a photo-thermal conversion layer are integrated, And a transfer film for OLED using the same.

상기의 목적을 달성하기 위한 본 발명의 실시예에 따른 광열변환필름은 광열변환물질이 포함된 기재층을 포함함으로써 기재층과 광열변환층이 일체화된 것을 특징으로 한다.
In order to accomplish the above object, the light-heat conversion film according to an embodiment of the present invention includes a substrate layer including a photo-thermal conversion material, so that the substrate layer and the photo-thermal conversion layer are integrated.

상기 다른 목적을 달성하기 위한 본 발명의 실시예에 따른 OLED용 전사 필름은 광열변환물질이 포함된 기재층 및 상기 광열변환물질이 포함된 기재층 상에 형성되는 유기발광물질층을 포함함으로써, 기재층과 광열변환층이 일체화된 것을 특징으로 한다.
According to another aspect of the present invention, there is provided a transfer film for an OLED, including a base layer including a photo-thermal conversion material and an organic light emitting material layer formed on the base layer including the photo- Layer and the photo-thermal conversion layer are integrated.

본 발명에 따른 광열변환필름은 광열변환효율을 그대로 유지하면서도, 층 구조가 단순해 짐에 따라 두께 정밀도가 높아지고, 코팅 공정이 줄어들게 됨에 따라 이물 혼입 등의 문제가 배제되어 제품의 신뢰성이 높아진다는 효과가 있다. 또한 카본블랙이 함유된 광열변환층 상에 중간층을 코팅할 경우, 용제로 인한 광열변환층의 손상을 효과적으로 방지할 수 있다.The photothermal conversion film according to the present invention has the advantages that the thickness precision is increased and the coating process is reduced as the layer structure is simplified while maintaining the light heat conversion efficiency as it is, . In addition, when the intermediate layer is coated on the photo-thermal conversion layer containing carbon black, damage to the photo-thermal conversion layer due to the solvent can be effectively prevented.

따라서, 본 발명에 따른 광열변환필름을 이용한 OLED용 전사 필름의 경우, 상기와 같은 효과로 인하여 신뢰도가 높은 OLED의 생산성을 향상시킬 수 있다.
Therefore, in the case of the transfer film for OLED using the photo-thermal conversion film according to the present invention, the productivity of the OLED with high reliability can be improved due to the above-mentioned effects.

도 1은 종래의 광열변환필름의 개략적인 단면을 나타낸 것이다.
도 2는 본 발명의 실시예에 따른 광열변환필름의 개략적인 단면을 나타낸 것이다.
도 3은 본 발명의 다른 실시예에 따른 광열변환필름의 개략적인 단면을 나타낸 것이다.
도 4는 본 발명의 실시예에 따른 OLED용 전사 필름의 개략적인 단면을 나타낸 것이다.
도 5는 본 발명의 다른 실시예에 따른 OLED용 전사 필름의 개략적인 단면을 나타낸 것이다.
1 is a schematic cross-sectional view of a conventional photo-thermal conversion film.
2 is a schematic cross-sectional view of a photo-thermal conversion film according to an embodiment of the present invention.
3 is a schematic cross-sectional view of a photothermal conversion film according to another embodiment of the present invention.
4 is a schematic cross-sectional view of a transfer film for an OLED according to an embodiment of the present invention.
5 is a schematic cross-sectional view of a transfer film for an OLED according to another embodiment of the present invention.

본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나, 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described in detail below. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

이하, 본 발명의 광열변환필름 및 이를 이용한 OLED용 전사 필름에 관하여 상세히 설명하기로 한다.
Hereinafter, a photothermal conversion film of the present invention and a transfer film for an OLED using the same will be described in detail.

도 2는 본 발명의 실시예에 따른 광열변환필름(100)의 개략적인 단면을 나타낸 것이다.2 is a schematic cross-sectional view of a photo-thermal conversion film 100 according to an embodiment of the present invention.

도 2를 참조하면, 본 발명의 실시예에 따른 광열변환필름(100)은 광열변환물질(111)이 포함된 기재층(110)을 포함한다. Referring to FIG. 2, a photo-thermal conversion film 100 according to an embodiment of the present invention includes a base layer 110 including a photo-thermal conversion material 111.

이로써 본 발명의 광열변환필름(100)은 종래의 광열변환필름과 대비하여 볼 때 기재층과 광열변환층이 일체화된 것을 특징으로 한다.
Thus, the photo-thermal conversion film 100 of the present invention is characterized in that the base layer and the photo-thermal conversion layer are integrated as compared with the conventional photo-thermal conversion film.

상기 기재층(110)에 포함되는 광열변환물질(111)은 열 전사 도너로부터 영구 수용체로의 전사층의 전사를 가능하게 하기 위하여 입사 방사선(예컨대, 레이저광)을 흡수하고 입사 방사선의 적어도 일부분을 열로 변환한다.The photothermal conversion material 111 included in the base layer 110 absorbs incident radiation (e.g., laser light) to enable transfer of the transfer layer from the heat transfer donor to the permanent receiver, and at least a portion of the incident radiation Heat.

상기 광열변환물질(111)은 전자기 스펙트럼의 적외, 가시, 및/또는 자외 영역 내의 광을 흡수한다.The photo-thermal conversion material 111 absorbs light in the infrared, visible, and / or ultraviolet regions of the electromagnetic spectrum.

본 발명의 광열변환물질(111)은, 예를 들어 염료(예컨대, 가시광선 염료, 자외선 염료, 적외선 염료, 형광 염료 및 방사선 편광 염료), 안료, 금속, 금속 화합물, 금속 필름, 및 다른 적합한 흡수 재료를 포함할 수 있다.The photo-thermal conversion material 111 of the present invention can be used in a wide variety of applications including, for example, dyes (such as visible light dyes, ultraviolet dyes, infrared dyes, fluorescent dyes and radiation polarized dyes), pigments, metals, metal compounds, Materials.

상기한 재료 중 특히 본 발명에 있어서, 바람직한 광열변환물질(111)은 카본블랙 또는 산화텅스텐계 물질인 것이 바람직하다. 카본블랙의 경우, 레이저광을 흡수하여 열로 방출하는 능력이 우수하며, 산화텅스텐계 물질은 적외선 흡수능이 우수하여, 레이저 조사시 광열변환 효과가 우수하다.Among the above materials, in the present invention, the preferable photo-thermal conversion material 111 is preferably a carbon black or a tungsten oxide-based material. In the case of carbon black, the ability to absorb laser light and emit it as heat is excellent. The tungsten oxide-based material has excellent infrared absorbing ability and is excellent in light-heat conversion effect upon laser irradiation.

특히 상기 산화텅스텐계 물질은 WO2 .72등과 같은 산화텅스텐 분말을 포함할 수 있다. In particular, the tungsten oxide-based materials may include tungsten oxide powder, such as WO 2 .72.

또한, 산화텅스텐계 물질은 수소 또는 금속 함유 산화텅스텐(MxWO3, M은 수소 또는 금속, 0.1<x<1) 분말을 포함할 수 있다. 상기 금속은 Li, Na, K, Rb, Cs, Ca, Ba, Sr, Fe, Sn, Mo, Nb, Ta, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga, In 및 Tl 중에서 1종 이상 선택될 수 있다. 금속 함유 산화텅스텐의 예로, K0 .33WO3, Rb0 .33WO3, Cs0 .33WO3등을 제시할 수 있으며, 세슘(Cs)이 함유된 Cs0 .33WO3를 이용하는 것이 광열변환효율 및 광투과도 측면에서 보다 바람직하다.
Further, the tungsten oxide-based material may include hydrogen or metal-containing tungsten oxide (M x WO 3 , where M is hydrogen or a metal, 0.1 <x <1) powder. The metal may be selected from the group consisting of Li, Na, K, Rb, Cs, Ca, Ba, Sr, Fe, Sn, Mo, Nb, Ta, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, And Tl. Examples of the metal-containing tungsten oxide may include K 0 .33 WO 3 , Rb 0 .33 WO 3 , Cs 0 .33 WO 3 , and the like. Cs 0 .33 WO 3 containing cesium (Cs) It is more preferable in terms of light-heat conversion efficiency and light transmittance.

한편 상기 광열변환물질(111)의 함량은, 기재층 함유 물질 전체 100중량부 대비 10~70중량부, 특히 바람직하게는 15~30중량부인 것이 바람직하다.On the other hand, the content of the photothermal conversion material 111 is preferably 10 to 70 parts by weight, particularly preferably 15 to 30 parts by weight, based on 100 parts by weight of the total amount of the substrate layer-containing material.

광열변환물질의 종류에 따라 정확한 수치는 다를 수 있으나 기재층에 함유되는 물질 전체를 100중량부로 할 때, 광열변환물질의 함량이 10중량부 미만일 경우에는 광열변환효율이 낮아져 전사효율 또한 낮아질 가능성이 있고, 70중량부를 초과하는 경우에는 광열변환물질이 기재층에 균일하게 도포되기가 어렵고 응집될 수 있다. 또한 광열변환물질의 방해로 수지들이 고분자 도막을 형성하기 어렵게 된다. 따라서 전사의 균질도가 떨어질 가능성이 있다.
If the content of the photo-thermal conversion material is less than 10 parts by weight, the light-to-heat conversion efficiency may be lowered and the transfer efficiency may be lowered, if the total amount of the material contained in the substrate layer is 100 parts by weight If the amount is more than 70 parts by weight, the photo-thermal conversion material may hardly be uniformly applied to the substrate layer and may be agglomerated. In addition, it is difficult for resins to form a polymer coating film due to interference of photo-thermal conversion materials. Therefore, there is a possibility that the homogeneity of the transcript is lowered.

또한, 상기 광열변환물질(111)이 포함된 기재층(110)의 O.D값은 0.5~4.5인 것이 바람직하다. The O.D. value of the substrate layer 110 including the photo-thermal conversion material 111 is preferably 0.5 to 4.5.

O.D(Optical Density: 광학밀도) 값은 일정한 세기를 가진 어떤 파장의 빛이 매질을 통과한 후, 광도가 그 일정세기로 될 때의 양을 의미하는 것으로서, 본 발명에서는 흡광도의 개념으로 사용한다.Optical Density (O.D.) value refers to the amount of light having a constant intensity after a certain wavelength of light passes through the medium, and is used as a concept of absorbance in the present invention.

O.D값이 0.5미만일 경우에는 기재층이 충분히 부풀어 전사가 되려면 큰 세기의 입사 방사선이 필요하기 때문에 유기발광물질에 해를 입힐 가능성이 있고, 4.5를 초과할 경우에는 과도한 열 발생으로 인해 광열변환층이 부푸는 도중에 광열변환층 내부가 터지거나 기재층의 급격한 온도 상승이 유기발광물질에 악영향을 끼칠 수 있으며 목표치 이상의 면적이 전사될 가능성 또한 존재한다.
If the OD value is less than 0.5, the base layer may be sufficiently swollen to be transferred, and a large intensity of incident radiation is required, which may cause damage to the organic luminescent material. If the OD value is more than 4.5, There is a possibility that the inside of the photo-thermal conversion layer is blown up or the rapid temperature rise of the substrate layer may adversely affect the organic luminescent material during the blowing, and the area above the target value may be transferred.

한편, 본 발명에 있어서, 상기 광열변환물질(111)이 포함된 기재층(110)의 두께는 50~200㎛인 것이 바람직하다. 광열변환물질이 포함된 기재층(110)의 두께가 50㎛미만인 경우에는 광 조사시 광열변환물질이 필름 두께 방향으로 전사에 필요한 충분한 두께로 팽창하지 않을 수 있다. 반대로, 광열변환물질이 포함된 기재층(110)의 두께가 200㎛초과인 경우에는 두께가 200㎛까지 증가할 때 얻을 수 있는 전사 효율 증가 등의 효과없이 단순히 두께만 증가할 수 있다.Meanwhile, in the present invention, the thickness of the substrate layer 110 including the photo-thermal conversion material 111 is preferably 50 to 200 μm. When the thickness of the substrate layer 110 including the photo-thermal conversion material is less than 50 占 퐉, the photo-thermal conversion material may not expand to a thickness sufficient for transfer in the film thickness direction during light irradiation. Conversely, when the thickness of the substrate layer 110 including the photo-thermal conversion material is more than 200 μm, the thickness can be simply increased without the effect of increase in transfer efficiency, which is obtained when the thickness increases to 200 μm.

한편, 본 발명에 있어서 상기 기재층(110)은 상기 광열변환물질(111) 이외에 PE(polyethylene), PET(polyethylene terephthalate), PP(polypropylene), PMMA(Poly(methyl methacrylate)), PVC(polyvinyl chloride), PC (polycarbonate), PS(polystyrene) 등 다양한 재질의 고분자를 포함할 수 있다. 특히 PET를 이용하는 것이 바람직하다. PET의 경우, 광열변환을 위한 광 조사시에 광 투과율이 높아 변형 방지를 통한 형상 유지가 용이한 장점이 있다. In the present invention, the base layer 110 may be formed of a material selected from the group consisting of polyethylene (PE), polyethylene terephthalate (PP), polypropylene (PP), poly (methyl methacrylate) ), Polycarbonate (PC), polystyrene (PS), and the like. Particularly, PET is preferably used. In the case of PET, since the light transmittance is high at the time of light irradiation for photo-thermal conversion, it is easy to maintain the shape by preventing deformation.

본 발명의 상기 기재층(110)은 상기 PET등 고분자와 상기한 광열변환물질(111)을 혼합하고 가열, 압출하는 과정에 의하여 제조할 수 있다.
The base layer 110 of the present invention can be prepared by mixing the polymer such as PET and the photo-thermal conversion material 111, and heating and extruding the mixture.

한편, 도 3은 본 발명의 다른 실시예에 따른 광열변환필름(100')의 개략적인 단면을 나타낸 것이다. 3 is a schematic cross-sectional view of a photothermal conversion film 100 'according to another embodiment of the present invention.

도 3에 나타낸 바와 같이, 본 발명의 광열변환필름은 상기 광열변환물질(111)이 포함된 기재층(110) 상에 중간층(120)이 더 형성되어 있을 수 있다.3, the light-heat conversion film of the present invention may further include an intermediate layer 120 formed on a base material layer 110 including the photo-thermal conversion material 111.

상기 중간층(120)은 전사물의 손상 및 오염을 최소화하고, 전사물의 왜곡을 감소시키는 역할을 한다. The intermediate layer 120 serves to minimize damage and contamination of the transfer material and reduce distortion of the transfer material.

이를 위하여 중간층(120)은 높은 내열성을 갖는 것이 바람직한바, 중간층(120)은 중합체 필름, 금속층(예컨대 증착 금속층), 무기층(예컨대 무기 산화물(예컨대 실리카, 티타니아 및 다른 금속 산화물)의 졸-겔 침착층 및 증착층) 및 유기/무기 복합층을 포함한다. 여기에서 유기재료는 열경화성 및 열가소성 재료를 포함한다. The intermediate layer 120 is preferably made of a polymer film, a metal layer (e.g., a deposited metal layer), an inorganic layer (e.g., an inorganic oxide such as silica, titania, and other metal oxides) A deposition layer and a deposition layer) and an organic / inorganic composite layer. Wherein the organic material includes thermosetting and thermoplastic materials.

상기 열경화성 재료로는 가교 결합되거나 가교 결합 가능한 폴리아크릴레이트, 폴리메타크릴레이트, 폴리에스테르, 에폭시 및 폴리우레탄을 포함하지만, 이에 제한되지 않으며, 열, 방사 또는 화학적 처리에 의해 가교 결합될 수 있는 수지를 포함한다.The thermosetting materials include, but are not limited to, crosslinkable or crosslinkable polyacrylates, polymethacrylates, polyesters, epoxies, and polyurethanes, resins that can be cross-linked by thermal, .

또한 상기 열가소성 재료는 예를 들어 열가소성 전구체로서 광열변환층 상에 코팅된 후 가교 결합되어 가교 결합 중간층을 형성할 수 있는 것이라면 제한이 없다. The thermoplastic material is not limited as long as it can be coated on the photo-thermal conversion layer, for example, as a thermoplastic precursor, and then crosslinked to form a crosslinked intermediate layer.

본 발명에 있어서 상기 중간층(120)은 광개시제, 계면활성제, 안료, 가소제 및 코팅 보조제를 포함한 첨가제를 함유할 수 있다.
In the present invention, the intermediate layer 120 may contain an additive including a photoinitiator, a surfactant, a pigment, a plasticizer, and a coating aid.

본 발명에 있어서 상기 중간층(120)의 두께는 0.1~3㎛인 것이 바람직하다. 중간층의 두께가 0.1㎛ 미만일 경우, 광열변환층(120) 보호 효과가 불충분할 수 있다. 반대로, 중간층의 두께가 3㎛를 초과하는 경우, 광 조사시 광열변환층의 팽창에도 불구하고, 중간층으로부터 전사물의 부착력이 약해지지 않을 수 있다.
In the present invention, the thickness of the intermediate layer 120 is preferably 0.1 to 3 占 퐉. If the thickness of the intermediate layer is less than 0.1 탆, the protective effect of the photo-thermal conversion layer 120 may be insufficient. On the other hand, when the thickness of the intermediate layer exceeds 3 占 퐉, the adhesion of the transfer material from the intermediate layer may not be weakened, despite the expansion of the photo-thermal conversion layer during light irradiation.

한편, 도 4는 본 발명의 실시예에 따른 OLED용 전사 필름(200)의 개략적인 단면을 나타낸 것이다.4 is a schematic cross-sectional view of a transfer film 200 for an OLED according to an embodiment of the present invention.

도 4에 나타낸 바와 같이 본 발명의 OLED용 전사 필름(200)은 광열변환물질(111)을 포함하는 기재층(110) 및 유기발광물질층(130)을 포함한다.As shown in FIG. 4, the OLED transfer film 200 of the present invention includes a base layer 110 including a photo-thermal conversion material 111 and a layer 130 of an organic light emitting material.

즉, 도 4에 도시된 OLED용 전사 필름(200)은 도 2에 도시된 광열변환필름(100) 상에 유기발광물질층(130)이 더 형성되어 있다. That is, in the OLED transfer film 200 shown in FIG. 4, an organic light emitting material layer 130 is further formed on the light heat conversion film 100 shown in FIG.

예를 들어, 레이저를 이용하여 광 조사시 기재층(110)에 포함된 광열변환물질(111)이 광을 흡수한 후 열로 방출하면서 광열변환층이 필름 두께방향으로 팽창하게 되고, 이에 따라, 유기발광물질층(130)이 박리되면서 전사 대상이 되는 기판에 전사가 이루어질 수 있게 된다.
For example, when the light is irradiated by using a laser, the photo-thermal conversion material 111 included in the base layer 110 absorbs light and emits the heat, thereby causing the photo-thermal conversion layer to expand in the film thickness direction, The light emitting material layer 130 is peeled off and transferred to the substrate to be transferred.

도 5는 본 발명의 다른 실시예에 따른 OLED용 전사 필름(200')의 개략적인 단면을 나타낸 것이다.5 is a schematic cross-sectional view of a transfer film 200 'for an OLED according to another embodiment of the present invention.

도 5를 참조하면, 도시된 OLED용 전사 필름은 광열변환물질(111)을 포함하는 기재층(110), 중간층(120) 및 유기발광물질층(130)을 포함한다. 5, the illustrated transfer film for an OLED includes a base layer 110, an intermediate layer 120, and an organic luminescent material layer 130 including a photothermal conversion material 111.

도 5에 도시된 예의 경우, 중간층(120)에 의하여 기재층(110)이 보호되는 것을 제외하고는 도 4에 도시된 예와 동일하므로, 그 상세한 설명은 생략하기로 한다.
In the case of the example shown in FIG. 5, the same as the example shown in FIG. 4, except that the base layer 110 is protected by the intermediate layer 120, and a detailed description thereof will be omitted.

실시예Example

이하, 본 발명의 바람직한 실시예를 통해 본 발명의 구성 및 작용을 더욱 상세히 설명하기로 한다. 다만, 이는 본 발명의 바람직한 예시로 제시된 것이며 어떠한 의미로도 이에 의해 본 발명이 제한되는 것으로 해석될 수는 없다. Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

여기에 기재되지 않은 내용은 이 기술 분야에서 숙련된 자이면 충분히 기술적으로 유추할 수 있는 것이므로 그 설명을 생략하기로 한다.
The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

1. One. 실시예Example 1~16 1 to 16

하기 표 1에 기재된 조성으로 광열변환물질을 포함하는 103㎛ 두께의 기재층을 형성함으로써 광열변환필름 시편을 제조하였다.
A photo-thermal conversion film specimen was prepared by forming a base layer having a thickness of 103 mu m containing a photothermal conversion material in the composition shown in Table 1 below.

구 분division 광열변환물질Photothermal conversion material 고분자Polymer 광열변환물질의 함량
(기재층 구성물질 전체 100중량부 기준)
Content of photo-thermal conversion material
(Based on 100 parts by weight of the entirety of the substrate layer constituting material)
기재층의 O.D값The O.D. value of the substrate layer
실시예 1Example 1 WO2 .72 WO 2 .72 PETPET 15중량부15 parts by weight 0.80.8 실시예 2Example 2 WO2 .72 WO 2 .72 PETPET 20중량부20 parts by weight 1.11.1 실시예 3Example 3 WO2 .72 WO 2 .72 PETPET 25중량부25 parts by weight 1.41.4 실시예 4Example 4 WO2 .72 WO 2 .72 PETPET 30중량부30 parts by weight 1.71.7 실시예 5Example 5 Cs0 .33WO3 Cs 0 .33 WO 3 PETPET 15중량부15 parts by weight 0.90.9 실시예 6Example 6 Cs0 .33WO3 Cs 0 .33 WO 3 PETPET 20중량부20 parts by weight 1.21.2 실시예 7Example 7 Cs0 .33WO3 Cs 0 .33 WO 3 PETPET 25중량부25 parts by weight 1.61.6 실시예 8Example 8 Cs0 .33WO3 Cs 0 .33 WO 3 PETPET 30중량부30 parts by weight 1.91.9 실시예 9Example 9 카본 블랙Carbon black PETPET 15중량부15 parts by weight 2.22.2 실시예 10Example 10 카본 블랙Carbon black PETPET 20중량부20 parts by weight 2.92.9 실시예 11Example 11 카본 블랙Carbon black PETPET 25중량부25 parts by weight 3.73.7 실시예 12Example 12 카본 블랙Carbon black PETPET 30중량부30 parts by weight 4.54.5 실시예 13Example 13 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
PETPET 15중량부15 parts by weight 2.02.0
실시예 14Example 14 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
PETPET 20중량부20 parts by weight 2.82.8
실시예 15Example 15 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
PETPET 25중량부25 parts by weight 3.63.6
실시예 16Example 16 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
PETPET 30중량부30 parts by weight 4.24.2

2. 2. 비교예Comparative Example 1~6 1 to 6

(1) 비교예 1~4(1) Comparative Examples 1 to 4

하기 표 2에 기재된 광열변환물질을 포함하는 3㎛ 두께의 광열변환층을 100㎛ 두께의 PET 필름 상에 형성하였다. 각각의 예에서 바인더로 우레탄 아크릴레이트(광열변환 물질의 20중량부)를 이용하였고, 광개시제로 Irgacure 651(BASF사 제조, 광열변환 물질의 0.5중량부)을 이용하였다. 용매는 이소프로필 알콜을 이용하였으며, 상기의 광열변환물질, 바인더, 광개시제 및 용매로 이루어진 조성물의 점도는 20cps이었다.
A photo-thermal conversion layer having a thickness of 3 mu m containing the photo-thermal conversion material described in Table 2 was formed on a PET film having a thickness of 100 mu m. In each example, urethane acrylate (20 parts by weight of photo-thermal conversion material) was used as a binder, and Irgacure 651 (0.5 parts by weight of photo-thermal conversion material, manufactured by BASF) was used as a photoinitiator. The solvent used was isopropyl alcohol, and the viscosity of the composition comprising the photo-thermal conversion material, the binder, the photoinitiator and the solvent was 20 cps.

구 분division 광열변환물질Photothermal conversion material 비교예 1Comparative Example 1 WO2 .72 WO 2 .72 비교예 2Comparative Example 2 Cs0 .33WO3 Cs 0 .33 WO 3 비교예 3Comparative Example 3 카본 블랙Carbon black 비교예 4Comparative Example 4 염료 PC-970 (욱성화학)
(Phthalo Cyanine type)
Dye PC-970 (WOO SUNG CHEMICAL)
(Phthalo Cyanine type)

(2) 비교예 5(2) Comparative Example 5

실시예 1과 동일하게 광열변환필름 시편을 제조하되, 광열변환물질의 함량을 기재층 구성물질 전체 100중량부 대비 5중량부로 하였다.
A photothermal conversion film specimen was prepared in the same manner as in Example 1 except that the content of the photothermal conversion material was changed to 5 parts by weight based on 100 parts by weight of the entirety of the substrate layer constituting material.

(3) 비교예 6(3) Comparative Example 6

실시예 1과 동일하게 광열변환필름 시편을 제조하되, 광열변환물질의 함량을 기재층 구성물질 전체 100중량부 대비 80중량부로 하였다.
A photothermal conversion film specimen was prepared in the same manner as in Example 1 except that the content of the photothermal conversion material was changed to 80 parts by weight based on 100 parts by weight of the entirety of the substrate layer constituting material.

3. 물성평가 결과3. Results of physical property evaluation

상기 실시예 및 비교예에 따른 광열변환필름 시편에 대한 물성평가결과는 하기 표3에 나타낸 바와 같다.The evaluation results of physical properties of the photothermal conversion film specimens according to Examples and Comparative Examples are shown in Table 3 below.

광열변환
물질
Photo-thermal conversion
matter
기재층-광열
변환층 일체화여부
Base layer - light heat
Whether the conversion layer is integrated
광열변환
물질의
함량
(기재층 구성물질 전체 100중량부 기준)
Photo-thermal conversion
Of matter
content
(Based on 100 parts by weight of the entirety of the substrate layer constituting material)
O.D값O.D value 광열
변환
효율(%)
Light heat
conversion
efficiency(%)
두께
편차
(㎛)
thickness
Deviation
(탆)
광열
변환층 손상
여부
Light heat
Conversion layer damage
Whether
실시예 1Example 1 WO2 .72 WO 2 .72 15중량부15 parts by weight 0.8
(기재층)
0.8
(Substrate layer)
200200 ±0.03± 0.03 ××
실시예2Example 2 WO2 .72 WO 2 .72 20중량부20 parts by weight 1.1
(기재층)
1.1
(Substrate layer)
210210 ±0.02± 0.02 ××
실시예3Example 3 WO2 .72 WO 2 .72 25중량부25 parts by weight 1.4
(기재층)
1.4
(Substrate layer)
215215 ±0.03± 0.03 ××
실시예4Example 4 WO2 .72 WO 2 .72 30중량부30 parts by weight 1.7
(기재층)
1.7
(Substrate layer)
220220 ±0.02± 0.02 ××
실시예 5Example 5 Cs0 .33WO3 Cs 0 .33 WO 3 15중량부15 parts by weight 0.9
(기재층)
0.9
(Substrate layer)
200200 ±0.03± 0.03 ××
실시예 6Example 6 Cs0 .33WO3 Cs 0 .33 WO 3 20중량부20 parts by weight 1.2
(기재층)
1.2
(Substrate layer)
210210 ±0.02± 0.02 ××
실시예 7Example 7 Cs0 .33WO3 Cs 0 .33 WO 3 25중량부25 parts by weight 1.6
(기재층)
1.6
(Substrate layer)
215215 ±0.02± 0.02 ××
실시예8Example 8 Cs0 .33WO3 Cs 0 .33 WO 3 30중량부30 parts by weight 1.9
(기재층)
1.9
(Substrate layer)
220220 ±0.03± 0.03 ××
실시예9Example 9 카본 블랙Carbon black 15중량부15 parts by weight 2.2
(기재층)
2.2
(Substrate layer)
220220 ±0.03± 0.03 ××
실시예10Example 10 카본 블랙Carbon black 20중량부20 parts by weight 2.9
(기재층)
2.9
(Substrate layer)
220220 ±0.03± 0.03 ××
실시예 11Example 11 카본 블랙Carbon black 25중량부25 parts by weight 3.7
(기재층)
3.7
(Substrate layer)
215215 ±0.05± 0.05 ××
실시예
12
Example
12
카본 블랙Carbon black 30중량부30 parts by weight 4.5
(기재층)
4.5
(Substrate layer)
210210 ±0.08± 0.08 ××
실시예
13
Example
13
염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
15중량부15 parts by weight 2.0
(기재층)
2.0
(Substrate layer)
205205 ±0.03± 0.03 ××
실시예
14
Example
14
염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
20중량부20 parts by weight 2.8
(기재층)
2.8
(Substrate layer)
210210 ±0.03± 0.03 ××
실시예
15
Example
15
염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
25중량부25 parts by weight 3.6
(기재층)
3.6
(Substrate layer)
210210 ±0.05± 0.05 ××
실시예 16Example 16 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
30중량부30 parts by weight 4.2
(기재층)
4.2
(Substrate layer)
205205 ±0.06± 0.06 ××
비교예1Comparative Example 1 WO2 .72 WO 2 .72 ×× -- 0.7
(광열변환층)
0.7
(Photo-thermal conversion layer)
200200 ±0.07± 0.07
비교예2Comparative Example 2 Cs0 .33WO3 Cs 0 .33 WO 3 ×× -- 1.2
(광열변환층)
1.2
(Photo-thermal conversion layer)
220220 ±0.05± 0.05
비교예3Comparative Example 3 카본 블랙Carbon black ×× -- 2.6
(광열변환층)
2.6
(Photo-thermal conversion layer)
200200 ±0.09± 0.09
비교예4Comparative Example 4 염료 PC-970
(욱성화학)
(Phthalo Cyanine type)
Dye PC-970
(Woo Sung Chemical)
(Phthalo Cyanine type)
×× -- 4.1
(광열변환층)
4.1
(Photo-thermal conversion layer)
160160 ±0.07± 0.07
비교예5Comparative Example 5 WO2 .72 WO 2 .72 5중량부5 parts by weight 0.4
(기재층)
0.4
(Substrate layer)
150150 ±0.02± 0.02 ××
비교예6Comparative Example 6 WO2 .72 WO 2 .72 80중량부80 parts by weight 3.9
(기재층)
3.9
(Substrate layer)
180180 ±0.09± 0.09 ××

상기 표 3에서 광열변환 효율은 Laser Continuous wave를 이용하여 50W로 기재층의 이면에서 1.0m/min으로 조사하여 초기 두께 대비 부푼 정도를 평가한 것이다.
In Table 3, the light-to-heat conversion efficiency was evaluated by irradiating the back side of the substrate layer with 1.0 m / min at 50 W using a laser continuous wave to evaluate the degree of swelling versus initial thickness.

표 3을 참조하면, 기재층과 광열변환층이 일체화된 실시예 1 내지 4의 경우, 기재층과 광열변환층을 분리한 비교예 1 내지 4와 대비하여 볼 때, 대동소이한 광열변환효율을 나타내었다. 대신 비교예의 경우 두께편차가 심하였고, 광열변환층 손상이 수반되었는바, 본 발명의 실시예에 의한 광열변환필름이 신뢰성이 우수함을 확인할 수 있었다.
In the case of Examples 1 to 4 in which the base layer and the photo-thermal conversion layer were integrated, the light-to-heat conversion efficiency of the photo-thermal conversion layer was improved compared to Comparative Examples 1 to 4 in which the base layer and the photo- Respectively. In the comparative example, the thickness variation was large and the photothermal conversion layer damage was accompanied, and it was confirmed that the photothermal conversion film according to the embodiment of the present invention is excellent in reliability.

또한, 실시예 1 내지 4의 경우, 광열변환물질의 함량을 달리한 비교예 5, 6과 대비하여 볼 때, O.D값에서 차이가 있는바, 다른 모든 조건이 일치할 때 기재층의 O.D 값은 기재층이 함유하는 광열변환물질의 절대량과 비례한다는 사실을 확인할 수 있었다. 또한 비교예 6과 같이 광열변환물질의 함량이 본 발명의 범위를 벗어나 너무 많은 경우에는 광열변환물질이 기재층에 균일하게 도포되기가 어렵고 응집되어서, 광열변환물질의 방해로 수지들이 고분자 도막을 형성하기 어려웠고, 전사의 균질도가 떨어졌다.
In the case of Examples 1 to 4, OD values of the base layer are different from each other in comparison with Comparative Examples 5 and 6 in which the content of photo-thermal conversion material is different, It can be confirmed that the absolute value of the photo-thermal conversion material contained in the base layer is proportional to the absolute amount. When the content of the photo-thermal conversion material is too much beyond the range of the present invention as in Comparative Example 6, it is difficult for the photo-thermal conversion material to uniformly coat the base layer and coagulate to thereby cause the resin to form a polymer film And the homogeneity of the warrior was lowered.

이상에서는 본 발명의 실시예를 중심으로 설명하였으나, 이는 예시적인 것에 불과하며, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 기술자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호범위는 이하에 기재되는 특허청구범위에 의해서 판단되어야 할 것이다.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. . Accordingly, the true scope of the present invention should be determined by the following claims.

Claims (20)

광열변환물질이 포함된 기재층을 포함함으로써, 기재층과 광열변환층이 일체화된 광열변환필름이고, 상기 광열변환물질은 산화텅스텐계 물질이며, 상기 산화텅스텐계 물질은 산화텅스텐 분말을 포함하고, 상기 산화텅스텐 물질은 WO2.72, Cs0.33WO3 및 이들의 조합으로 이루어진 군으로부터 선택된 하나를 포함하며,
상기 광열변환물질이 포함된 기재층의 O.D값은 0.8~1.9인 것을 특징으로 하는 광열변환필름.
A photo-thermal conversion film comprising a substrate layer containing a photo-thermal conversion material, the photo-thermal conversion material being a tungsten oxide material, the tungsten oxide material including tungsten oxide powder, Wherein the tungsten oxide material comprises one selected from the group consisting of WO 2.72 , Cs 0.33 WO 3, and combinations thereof,
Wherein an OD value of the substrate layer containing the photo-thermal conversion material is 0.8 to 1.9.
삭제delete 삭제delete 삭제delete 삭제delete 제 1항에 있어서,
상기 광열변환물질의 함량은,
기재층 함유 물질 전체 100중량부 대비 10~70중량부인 것을 특징으로 하는 광열변환필름.
The method according to claim 1,
The content of the photo-
Is 10 to 70 parts by weight based on 100 parts by weight of the entire substrate layer-containing material.
삭제delete 제 1항에 있어서,
상기 광열변환물질이 포함된 기재층의 두께는 50~200㎛인 것을 특징으로 하는 광열변환필름.
The method according to claim 1,
Wherein the thickness of the substrate layer containing the photo-thermal conversion material is 50 to 200 占 퐉.
제 1항에 있어서,
상기 광열변환물질이 포함된 기재층 상에는 중간층이 더 형성되어 있는 것을 특징으로 하는 광열변환필름.
The method according to claim 1,
Wherein an intermediate layer is further formed on the substrate layer containing the photo-thermal conversion material.
제 9항에 있어서,
상기 중간층의 두께는 0.1~3㎛인 것을 특징으로 하는 광열변환필름.
10. The method of claim 9,
Wherein the intermediate layer has a thickness of 0.1 to 3 占 퐉.
광열변환물질이 포함된 기재층; 및
상기 광열변환물질이 포함된 기재층 상에 형성되는 유기발광물질층을 포함함으로써, 기재층과 광열변환층이 일체화된 OLED용 전사 필름이고, 상기 광열변환물질은 산화텅스텐계 물질이며, 상기 산화텅스텐계 물질은 산화텅스텐 분말을 포함하고, 상기 산화텅스텐 물질은 WO2.72, Cs0.33WO3 및 이들의 조합으로 이루어진 군으로부터 선택된 하나를 포함하며, 상기 광열변환물질이 포함된 기재층의 O.D값은 0.8~1.9인 것을 특징으로 하는 OLED용 전사 필름.
A base layer containing a photothermal conversion material; And
Wherein the photo-thermal conversion material is a tungsten oxide-based material, and the tungsten oxide-based material is a tungsten oxide-based material, and the photo-thermal conversion material is a tungsten oxide- Wherein the base material comprises tungsten oxide powder and the tungsten oxide material comprises one selected from the group consisting of WO 2.72 , Cs 0.33 WO 3 and combinations thereof, wherein the OD value of the base layer comprising the photo-thermal conversion material is 0.8 Lt; RTI ID = 0.0 &gt; 1. &lt; / RTI &gt;
삭제delete 삭제delete 삭제delete 삭제delete 제 11항에 있어서,
상기 광열변환물질의 함량은,
기재층 함유 물질 전체 100중량부 대비 10~70중량부인 것을 특징으로 하는 OLED용 전사 필름.
12. The method of claim 11,
The content of the photo-
Is 10 to 70 parts by weight based on 100 parts by weight of the entire substrate layer-containing material.
삭제delete 제 11항에 있어서,
상기 광열변환물질이 포함된 기재층의 두께는 50~200㎛인 것을 특징으로 하는 OLED용 전사 필름.
12. The method of claim 11,
Wherein the thickness of the substrate layer containing the photo-thermal conversion material is 50 to 200 占 퐉.
제 11항에 있어서,
상기 광열변환물질이 포함된 기재층 상에는 중간층이 더 형성되어 있는 것을 특징으로 하는 OLED용 전사 필름.
12. The method of claim 11,
And an intermediate layer is further formed on the base layer containing the photo-thermal conversion material.
제 19항에 있어서,
상기 중간층의 두께는 0.1~3㎛인 것을 특징으로 하는 OLED용 전사 필름.
20. The method of claim 19,
Wherein the intermediate layer has a thickness of 0.1 to 3 占 퐉.
KR1020120117603A 2012-10-23 2012-10-23 Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same Active KR101587678B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120117603A KR101587678B1 (en) 2012-10-23 2012-10-23 Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120117603A KR101587678B1 (en) 2012-10-23 2012-10-23 Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same

Publications (2)

Publication Number Publication Date
KR20140051524A KR20140051524A (en) 2014-05-02
KR101587678B1 true KR101587678B1 (en) 2016-01-21

Family

ID=50885161

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120117603A Active KR101587678B1 (en) 2012-10-23 2012-10-23 Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same

Country Status (1)

Country Link
KR (1) KR101587678B1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001026184A (en) * 1999-07-15 2001-01-30 Fuji Photo Film Co Ltd Dampening water-free lithographic original plate
JP2008066439A (en) * 2006-09-06 2008-03-21 Konica Minolta Holdings Inc Method for producing organic thin film transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129345A (en) * 2009-12-17 2011-06-30 Fujifilm Corp Photothermal conversion sheet, organic electroluminescent material sheet using it, and method of manufacturing organic electroluminescent device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001026184A (en) * 1999-07-15 2001-01-30 Fuji Photo Film Co Ltd Dampening water-free lithographic original plate
JP2008066439A (en) * 2006-09-06 2008-03-21 Konica Minolta Holdings Inc Method for producing organic thin film transistor

Also Published As

Publication number Publication date
KR20140051524A (en) 2014-05-02

Similar Documents

Publication Publication Date Title
KR102286678B1 (en) Light to heat conversion layer and donor sheet
EP2874193B1 (en) Photothermal conversion film having good visible light transmittance, and transfer film for oled using same
KR102543285B1 (en) Light to heat conversion layer and donor sheet
KR102355561B1 (en) Light to heat conversion layer and donor sheet
KR101188548B1 (en) Thermal imaging donor film controlling laser pattern resolution and energy field and the device using the same
KR101525999B1 (en) Thermal transfer film
KR101587678B1 (en) Light to heat conversion film with integrated base-layer and light to heat conversion layer and transfer film for oled using the same
KR101937878B1 (en) Light to heat conversion film with wavelength selectivity and transfer film for oled using the same
KR20150062090A (en) Thermal transfer film and electroluminescence display device prepared using the same
KR20130072573A (en) Donor Film for Laser Thermal Transfer Method
JP2007140098A (en) Optical film for display
US9620715B2 (en) Thermal transfer film, method for manufacturing same, and organic electroluminescent device manufacturing therefrom
KR101381266B1 (en) Donor film having antistatic property
KR101340548B1 (en) Light-to-heat conversion layer and thermal transfer film comprising the same
KR101768148B1 (en) Donor sheet and Mothod for fabricating uesing the same
KR101470077B1 (en) Light to heat conversion film with excellent visible ray transmission and transfer film for oled using the same
KR102132279B1 (en) Doner film for lazer induced thermal imazing
KR20110132021A (en) LTI Donor Film
KR101775750B1 (en) Donor film for oled with excellent heat-resistance
KR102175753B1 (en) Doner film for laser induced thermal imazing
KR101659115B1 (en) Thermal transfer film and electroluminescence display device prepared using the same
KR101450279B1 (en) Donor film for liti process
KR20150106265A (en) Thermal transfer film and electroluminescence display device prepared using the same
KR20170115180A (en) Doner film for oled and manufacturing method of oled using the same
TW201408484A (en) Thermal transfer film and organic electroluminescent device prepared using the same

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20121023

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20131113

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20121023

Comment text: Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140911

Patent event code: PE09021S01D

AMND Amendment
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150424

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20151026

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20150424

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20140911

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20151026

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20150623

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20141211

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20160114

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20151228

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20151026

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20150623

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20141211

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160115

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160115

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190107

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190107

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20200102

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20200102

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210104

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20220103

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20221226

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20231226

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20241219

Start annual number: 10

End annual number: 10