KR101581090B1 - Apparatus for processing flexible substrate and method of processing flexible substrate using the same - Google Patents

Abstract

The present invention relates to a flexible substrate processing apparatus for processing a flexible substrate in a roll-to-roll manner in an independent space by separating a process region for processing the flexible substrate from the transfer of the flexible substrate, and a flexible substrate processing method using the same, A substrate supply roll disposed inside the chamber for supplying a flexible substrate and a substrate recovery roll disposed inside the chamber for withdrawing the flexible substrate from the substrate supply roll and recovering the flexible substrate, A rotary stage for rotatingly transferring the flexible substrate by supporting the flexible substrate on a curved surface between the supply roll and the substrate recovery roll, a partition wall defining a plurality of process areas in the chamber, and a bias electrode provided on the stage, A plurality of process regions Wherein a plurality of process regions are supplied with process gases, and plasma power is applied to the plurality of process regions by RF power applied to the bias electrode and the plurality of electrodes, respectively, . Accordingly, the flexible substrate processing apparatus and the flexible substrate processing method using the flexible substrate processing apparatus according to the present invention have an effect of improving the productivity by using the roll-to-roll method.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible substrate processing apparatus and a flexible substrate processing method using the flexible substrate processing apparatus and a flexible substrate processing method using the flexible substrate processing apparatus. ≪ Desc / Clms Page number 1 >

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flexible substrate processing apparatus and a flexible substrate processing method using the same, and more particularly, to a flexible substrate processing apparatus that processes a flexible substrate by a roll to roll method and a flexible substrate processing method using the same .

In general, a flexible display is a display made of a flexible substrate such as plastic. Such a flexible display is regarded as a next generation technology of the present display market because it can be folded, bent or rolled into a rolled shape with excellent display characteristics.

In addition, since the flexible display can be continuously manufactured using a roll-to-roll system in comparison with a display manufactured using a conventional glass substrate in a cluster system, the flexible display can reduce the manufacturing cost and improve the productivity due to mass production The market is expected to attract.

Such a roll-to-roll manufacturing method of a conventional flexible display has already been disclosed in Korean Patent Laid-Open Publication No. 2009-0068670, a roll rheol substrate transfer apparatus, a wet etching apparatus and a circuit board manufacturing apparatus (2009.06.29) Lt; / RTI >

The disclosed invention includes a plurality of rollers to enable continuous fabrication of the substrate. However, the present invention has a problem that the roller disposed in the area where the etching process is performed may be directly exposed to the etching gas or the plasma, and the roller may be damaged during the etching process for the substrate.

Korean Patent Publication No. 2009-0068670; Roll rupture substrate transfer device, wet etching device including the same and circuit board manufacturing device (2009.06.29)

An object of the present invention is to provide a flexible substrate processing apparatus in which a roller for transferring a substrate is not directly exposed to a plasma, and a flexible substrate processing method using the same.

A flexible substrate processing apparatus according to the present invention includes a chamber in which a plurality of process regions are formed and a substrate supply roll disposed inside the chamber to supply a flexible substrate and a flexible substrate disposed inside the chamber for withdrawing the flexible substrate from the substrate supply roll A rotary stage which is disposed inside the chamber and rotatably feeds the flexible substrate by supporting the flexible substrate on a curved surface between the substrate supply roll and the substrate recovery roll; And a plasma generating unit including a plurality of processing electrodes arranged in the plurality of processing regions, respectively, and a plasma is generated in the plurality of processing regions by RF power applied to the bias electrode and the plurality of electrodes.

Wherein the substrate supply roll and the substrate recovery roll are provided on one side of the rotation stage, the flexible substrate is supplied in a horizontal direction from the substrate supply roll toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And can be recovered horizontally toward the recovery roll.

Wherein the substrate supply roll and the substrate recovery roll are provided at one side of the rotation stage, the flexible substrate is supplied from the substrate supply roll in the vertical direction toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And can be recovered vertically toward the recovery roll.

The rotary stage is provided with a drum, and the flexible substrate can be supported on the curved surface of the drum.

The plurality of electrodes may be disposed parallel to the tangent line of the rotating stage so as to be individually controllable.

The flexible substrate processing apparatus may further include a plasma sensing unit disposed between the plurality of electrodes and the rotation stage and sensing a generation time point and a disappearance time point of the plasma.

The plurality of electrodes may be capable of adjusting a distance to the rotation stage.

A slip portion for reducing the frictional force generated between the flexible substrate and the rotary stage is formed on the rotary stage, the slip portion includes a first groove formed in an oblique direction with respect to a moving direction of the flexible substrate, And may be formed as a second groove formed in an oblique direction with respect to the traveling direction and intersecting the first groove.

An inert gas may be introduced into the first and second grooves.

The chamber may include a first chamber in which the substrate supply roll and the substrate recovery roll are disposed, and a second chamber in which the rotation stage and the plasma generation unit are disposed.

The second chamber may be maintained at a lower pressure than the first chamber.

Wherein the chamber further comprises a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber, Can be discharged.

The process gas may be an etching gas or a deposition gas.

The flexible substrate processing method according to the present invention comprises the steps of: (a) releasing a flexible substrate from a substrate supply roll disposed in a chamber; and (b) supporting the flexible substrate on a curved surface of a rotating stage disposed inside the chamber. (C) a bias electrode provided in the rotation stage; and a plurality of process electrodes arranged in a plurality of process regions formed in the chamber, the process gas being supplied to the plurality of process regions, And (d) recovering the flexible substrate to a substrate collection roll disposed within the chamber.

In the step (c), the plurality of electrodes arranged in parallel to the tangential line on the rotating stage are individually controlled, and plasma may be sequentially generated with respect to the flexible substrate.

In the step (c), the generation timing and the disappearance timing of the plasma may be sensed in each of the plurality of process areas.

Wherein the chamber comprises a first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside and a second chamber in which the rotation stage and the plasma generation unit are disposed inside, and before the step (a) And the second chamber is kept at a lower pressure than the first chamber.

Wherein the chamber further comprises a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber, It can be discharged to the outside of the chamber.

In the step (c), an etching process or a deposition process may be performed on the flexible substrate.

In the step (c), the pre-processing, the main processing, and the post-processing may be sequentially performed on the flexible substrate.

The flexible substrate processing apparatus according to the present invention and the flexible substrate processing method using the same can not only improve the productivity by using the roll-to-roll method but also prevent the roller for transferring the substrate from being directly exposed to the plasma, So that the maintenance can be facilitated.

The technical effects of the present invention are not limited to the effects mentioned above, and other technical effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing a flexible substrate processing apparatus according to the present embodiment,
2 is a cross-sectional view schematically showing a buffer chamber according to the present embodiment,
3 is a cross-sectional perspective view showing a rotation stage of the flexible substrate processing apparatus according to the present embodiment,
4 is a schematic view showing a flexible substrate processing apparatus according to another embodiment,
5 is a schematic view showing a flexible substrate processing apparatus according to another embodiment,
6 is a flowchart showing a flexible substrate processing method according to this embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present embodiments are not limited to the embodiments described below, but may be implemented in various forms. In addition, the shape of elements and the like in the drawings may be exaggerated for clarity, and elements denoted by the same reference numerals in the drawings denote the same elements.

In addition, the flexible substrate to be processed by the flexible substrate processing apparatus according to this embodiment, which will be described below, can withstand a high process temperature and can have a low coefficient of thermal expansion (CTE), excellent chemical resistance, As the material, FRP (Fiber Reinforced Plastic), PET, PEN, PC, PES, AryLite, COC and the like can be used. The flexible substrate may be provided with a predetermined pattern for forming a thin film transistor, and the flexible substrate may be wound and rolled. At this time, a barrier film for protecting the pattern formed on the surface of the substrate may be adhered to the roll-shaped substrate.

In addition, the flexible substrate processing apparatus of the present embodiment is provided with an ECCP (Enhanced Capacitive Coupled Plasma) device capable of applying a frequency source for accelerating ions generated through plasma to an electrode It is previously known that the flexible substrate processing apparatus according to the present invention can be applied to other flexible substrate processing apparatuses that generate plasma to perform processing on the flexible substrate.

Fig. 1 is a configuration diagram briefly showing a flexible substrate processing apparatus according to the present embodiment.

1, a flexible substrate processing apparatus 100 according to the present embodiment includes a substrate supply unit 110, a substrate collection unit 130, a first chamber 150, a second And includes a chamber 170 and a buffer chamber 190.

First, the substrate supply unit 110 supplies the flexible substrate S. The substrate supply unit 110 may include a substrate supply roll 111 and a barrier discharge roll 113.

 The flexible substrate S provided in the form of a roll may be supported on the substrate feed roll 111. And the barrier discharge rolls 113 are disposed on one side of the substrate supply roll 111. [ The barrier discharge roll 113 is wound around the barrier film B1 that is peeled from the flexible substrate S. [

And a lip roll LR may be disposed between the substrate feed roll 111 and the barrier discharge roll 113. [ The lip roll LR is formed so that bubbles are prevented from being generated between the flexible substrate S and the barrier film B 1 when the barrier film B 1 peeled off from the flexible substrate S is adhered to the flexible substrate S again do.

More specifically, in order to confirm in advance the tension of the flexible substrate S in the process of setting the initial equipment, the flexible substrate S is unwound from the substrate supply roll 111, and the barrier film (B1) . The flexible substrate S on which the barrier film B1 has been peeled off can be recovered in the substrate supply roll 111 by again bonding the barrier film B1 for the actual process. At this time, the lip roll LR can prevent bubbles from being generated between the flexible substrate S and the barrier film B1 which are to be adhered again.

 On the other hand, the substrate recovery unit 130 winds the flexible substrate S wound on the substrate supply roll 111. The substrate recovery unit 130 may include a substrate recovery roll 131 and a barrier supply roll 133.

A drive motor (not shown) may be installed on the substrate recovery roll 131 to provide power to the flexible substrate S to be wound on the substrate recovery roll 131. The flexible substrate S supported on the substrate supply roll 111 in the form of a roll can be withdrawn from the substrate supply roll 111 and recovered to the substrate recovery roll 131 in accordance with the rotation of the substrate recovery roll 131. [ The barrier supply roll 133 is disposed on one side of the substrate recovery roll 131. The barrier supply roll 133 supplies the barrier film (B2) for protecting the surface of the flexible substrate (S). Thus, the surface of the flexible substrate S can be protected by attaching the barrier film B2 to the surface of the flexible substrate S recovered in the substrate recovery roll 131. [

And a lip roll LR may be disposed between the substrate recovery roll 131 and the barrier supply roll 133. [ The lip roll LR prevents bubbles from being generated between the flexible substrate S and the barrier film B2 during the process of adhering the flexible substrate S and the barrier film B2.

The substrate supply unit 110 and the substrate recovery unit 130 are disposed inside the first chamber 150. Here, the first chamber 150 provides a clean environment by shielding the space to which the flexible substrate S is transferred from the outside. A first exhaust pump (not shown) for exhausting the interior of the chamber is connected to the first chamber 150 so that the interior of the first chamber 150 can be maintained at a predetermined pressure (for example, 10 ^-2 Torr) have.

In the second chamber 170, a series of processing steps for the flexible substrate S are performed. Since the second chamber 170 has a structure that communicates with the first chamber 150 by the buffer chamber 190, the gas or particles supplied to the inside of the second chamber 170 can flow into the first chamber 150 Can be introduced.

However, in the present embodiment, the internal pressure is maintained at a lower pressure than the internal pressure of the first chamber 150 by the second exhaust pump (not shown) connected to the second chamber 170 at one side. Accordingly, the gas or particles in the second chamber 170 may not flow out into the first chamber 150. The detailed configuration of the second chamber 170 will be described in detail with reference to the accompanying drawings.

The buffer chamber 190 may be disposed between the first chamber 150 and the second chamber 170. For example, the buffer chamber 190 includes a first buffer chamber 191 disposed between the outlet 150a of the first chamber 150 and an inlet 170a of the second chamber 170, a second chamber 170 And a second buffer chamber 193 disposed between the outlet 170c of the first chamber 150 and the inlet 150c of the first chamber 150. Here, the first and second buffer chambers 191 and 193 may have the same configuration. Hereinafter, a single buffer chamber 190 will be described.

2 is a cross-sectional view schematically showing a buffer chamber according to the present embodiment.

As shown in FIG. 2, the buffer chamber 190 may be disposed between the first chamber 150 and the gate valve G of the second chamber 170. Here, each of the buffer chambers 190 is connected to a third exhaust pump (not shown) for exhausting the inside of the chamber. At this time, the internal pressure of the buffer chamber 190 is maintained at a higher pressure than the internal pressure of the second chamber 170, and may be maintained at a lower pressure than the internal pressure of the first chamber 150. Thus, the buffer chamber 190 can be prevented from introducing gas or particles from the second chamber 170.

The buffer chamber 190 may be supplied with an inert gas capable of blocking gas or particles introduced from the second chamber 170. Here, the inert gas may be a nitrogen (N2) gas as shown in FIG. 2, and at least one diffusion plate 190a may be disposed inside the buffer chamber 190. FIG.

The diffusion plate 190a diffuses the inert gas introduced into the buffer chamber 190 inside the buffer chamber 190. For this purpose, a plurality of diffusion holes 190b may be formed in the diffusion plate 190a. The diffusion plates 190a may be disposed in pairs so as to face each other in the buffer chamber 190. The space between the pair of diffusion plates 190a may be a transport path through which the flexible substrate S is transported Can be formed. An idle roller 181 for guiding and supporting the flexible substrate S may be disposed in the buffer chamber 190.

Accordingly, the buffer chamber 190 discharges the inert gas and the gas or particles introduced from the second chamber 170 together with the third exhaust pump to the outside of the chamber even if the gas or particles are introduced from the second chamber 170 . Accordingly, the buffer chamber 190 prevents gas or particles from entering the first chamber 150, thereby preventing the interior of the first chamber 150 from being contaminated.

However, in the present embodiment, the internal pressure of the buffer chamber 190 is maintained at a higher pressure than the internal pressure of the second chamber 170 and is maintained at a lower pressure than the internal pressure of the first chamber 150, The chamber 190 may be connected to a first exhaust pump that is evacuating the interior of the first chamber 150 such that the internal pressure maintains the same pressure as the internal pressure of the first chamber 150.

The second chamber 170 is provided with a rotation stage 171, a plasma generating unit 173, a barrier rib 175 and a plasma sensing unit 177.

First, the gates G1 and G2 are disposed at the entrance 170a and the exit 170c side of the second chamber 170. The gates G1 and G2 can open and close the second chamber 170 to form an entry / exit path of the flexible substrate S. [

3 is a cross-sectional perspective view showing a rotation stage of the flexible substrate processing apparatus according to the present embodiment.

As shown in FIG. 3, the rotating stage 171 is disposed inside the second chamber 170. The rotation stage 171 supports the flexible substrate S and can rotate and transfer the flexible substrate S from the substrate supply unit 110 (see FIG. 1) to the substrate recovery unit 130 (see FIG. 1). Here, the rotary stage 171 is provided as a drum so that the flexible substrate S is continuously transferred to the plasma generating portion 173.

The rotation stage 171 rotates from the inlet 170a side to the outlet 170c side of the second chamber 170 while the flexible substrate S carried into the second chamber 170 is supported on the curved surface . Here, the rotation stage 171 may be rotatably provided. To this end, the rotation axis of the rotation stage 171 is arranged to penetrate the side wall of the second chamber 170. At this time, a sealing member 170e is disposed between the rotation shaft and the side wall of the second chamber 170. [ The sealing member 170e maintains the pressure inside the second chamber 170 and allows the rotation stage 171 to rotate. Here, the sealing member 170e may be provided with a magnetic fluid seal.

Further, the rotating stage 171 can be heated or cooled to approximately 25 to 50 占 폚 according to the process. Thus, the rotating stage 171 may be provided with a heating unit 171a and a cooling unit 171c.

First, the heating portion 171a is disposed in the inner space of the rotation stage 171. [ Here, the heating unit 171a heats the inner space of the rotation stage 171, so that the flexible substrate S can be heated by radiant heat. At this time, the heating unit 171a may be provided with a heating cable or a heating coil.

The cooling unit 171c may be provided on the outer wall of the rotary stage 171 forming the curved surface of the rotary stage 171 so that the flexible substrate S may be cooled. Here, the cooling section 171c may be formed as a cooling channel on the outer wall of the rotating stage 171. [ The cooling section 171c may include a coolant inlet / outlet section 171ca. The refrigerant inlet / outlet portion 171ca is disposed on the rotary shaft of the rotary stage 171 so that cooling fluid can be supplied to and discharged from the cooling portion 171c. Here, the refrigerant inlet / outlet portion 171ca may be provided with a slip ring.

A slip portion 171g for reducing a frictional force between the curved surface of the rotary stage 171 and the flexible substrate S may be formed on the curved surface of the rotary stage 171. [

That is, the slip portion 171g includes a first groove 171ga formed in an oblique direction with respect to the traveling direction of the flexible substrate S and a second groove 171g formed in the oblique direction with respect to the traveling direction of the flexible substrate S, And a second groove 171gc formed to intersect with the first groove 171g. The first and second grooves 171ga and 171gc may be formed in plural numbers. The slip portion 171g prevents the entire surface area of the flexible substrate S from being in surface contact with the rotating stage 171 to alleviate the frictional force between the curved surface of the rotating stage 171 and the flexible substrate S .

In addition, a gas inlet hole (not shown) may be provided in a region where the first and second grooves 171ga and 171gc intersect to allow the inert gas to flow into the first and second grooves 171ga and 171gc. Thus, the flexible substrate S can be slipped and transported from the curved surface of the rotating stage 171. [

Referring to FIG. 1 again, as described above, the processing apparatus of the present embodiment may be provided with an ECCP (Enhanced Capacitive Coupled Plasma) apparatus. The plasma generating unit 173 includes a bias electrode 173a, (173c).

First, the bias electrode 173a may be provided on the rotating stage 171. [ At this time, although not shown, the bias electrode 173a may be provided as a separate electrode in the rotation stage 171, or the rotation stage 171 itself may be provided as an electrode. A slip ring 173 (see FIG. 2) may be disposed on the rotating shaft of the rotating stage 171, as the rotating stage 171 can be rotatably provided. Here, the slip ring 173 transmits a high frequency power for generating a plasma and a separate high frequency power contributing thereto to the bias electrode 173a, and the rotation stage 171 can rotate.

One surface of the electrode 173c facing the rotating stage 171 may be disposed parallel to the tangent of the rotating stage 171, that is, the tangent of the bias electrode 173a. For example, the electrode 173c is disposed apart from the curved surface of the rotating stage 171. [ Here, the electrode 173c may be installed inside the second chamber 170 so as to face the bias electrode 173a. The electrode 173c may be provided in the form of a showerhead for introducing a process gas contributing to plasma generation. Here, the process gas may be an etching gas or a deposition gas on which the etching process or the deposition process for the flexible substrate S is performed.

Further, the electrode 173c may be provided in a plurality so that a plurality of processes can be performed on the flexible substrate S being transported. The plurality of electrodes 173c may be provided so as to be individually controllable. Thus, the maintenance apparatus and the substrate processing process can be facilitated by the plurality of electrodes 173c. For example, when the operation of one of the plurality of electrodes 173c is stopped, a continuous process for the flexible substrate S may be possible by using another electrode.

The bias electrode 173a and the plurality of electrodes 173c enable the capacitive coupling plasma to be continuously generated in one region of the flexible substrate S. Thus, in the processing apparatus 100, the flexible substrate S is transferred and can be continuously processed. The bias electrode 173a and the plurality of electrodes 173c divide the flexible substrate S by regions and generate and control a separate plasma in each region. The bias electrode 173a and the electrodes 173a and 173c allow the continuous process for the flexible substrate S to be performed without stopping the transfer of the flexible substrate S and the process time for the flexible substrate S There is an advantage that it can be shortened.

In addition, the plurality of electrodes 173c can be arranged so as to be able to adjust the distance to the bias electrode 173a. To this end, each electrode 173c may be axially connected to a drive unit 180 disposed outside the second chamber 170. [ A bellows 181 is provided between the driving unit 180 and the second chamber 170 to prevent the pressure inside the second chamber 170 from changing through the connection area between the driving unit 180 and the electrode 173c So that the internal pressure of the second chamber 170 can be maintained.

Meanwhile, the barrier ribs 175 may define a generation region of plasma generated by the bias electrode 173a and the plurality of electrodes 173c. That is, the barrier ribs 175 allow a plurality of process regions to be formed in the second chamber 170. Here, the barrier rib 175 may extend from the side wall of the second chamber 170 toward the curved surface of the rotating stage 171 between the plurality of electrodes 173c. At this time, the partition 175 is disposed so that one end facing the rotation stage 171 is separated from the curved surface of the rotation stage 171 by a space through which the flexible substrate S can pass.

The plasma sensing unit 177 may be disposed in a region partitioned by the barrier ribs 175, respectively. The plasma sensing unit 177 can confirm the plasma state. Here, the plasma sensing unit 177 senses the generation time point and the extinction time point of the capacitively coupled plasma in the area where each is disposed. Accordingly, the plasma sensing unit 177 can detect the progress of the etching or deposition process on the flexible substrate S during transport. Accordingly, in the processing apparatus 100, the divisional transferring time of the flexible substrate S passing through the partitioned region and the entire transferring time of the flexible substrate S passing through the entire divided region can be controlled, There is an advantage that a more precise process can be performed.

The idler roller 181, the load cell 183, and the tension adjuster 183 for smoothly transferring the flexible substrate S from the substrate supply unit 110 to the substrate recovery unit 130 are provided in the first chamber 150, A roller 185 may be disposed.

At first, the idle roller 181 is provided between the substrate supply unit 110 and the substrate recovery unit 130 to form a transport path of the flexible substrate S. The load cell 183 is mounted on the rotary shaft of the idler roller 181 and can sense the pressure transmitted to the rotary shaft of the idler roller 181 and the tension of the flexible substrate S.

In addition, the tension adjusting roller 185 may be provided at least from the substrate supplying unit 110 to the substrate collecting unit 130. For example, the tension adjusting roller 185 may be provided on the inlet side of the first chamber 150 and on the outlet side of the first chamber 150, respectively. The tension regulating roller 185 controls the tension of the flexible substrate S to be supplied and recovered in parallel to the flexible substrate S based on the tension of the flexible substrate S sensed by the load cell 183. [ can do. Here, the tension adjusting roller 185 may be configured such that the surface of the flexible substrate S on which the flexible substrate S is in contact is subjected to a silicone treatment so that the tension of the flexible substrate S can be adjusted according to the rotation speed control.

1, two idler rollers 181 are arranged between the substrate feed roll 111 and the buffer chamber 190, and one idler roller 181 is disposed between the buffer chamber 190 and the substrate recovery unit 130, The number of the idle rollers 181 and the number of the tension adjusting rollers 185 is not limited to the number of the rollers of the present invention And should not be construed as limiting the scope of the rights.

On the other hand, as described above, since the predetermined pattern is already formed on the surface of the flexible substrate S and the flexible substrate S is provided in the form of a roll in which the barrier film B1 is adhered, It may remain.

A drying unit 187 for drying the flexible substrate S may be disposed between the substrate feed roll 111 and the first buffer chamber 191 to remove the moisture remaining on the flexible substrate S. [ A heating unit 189 for stabilizing the temperature of the flexible substrate S may be installed between the drying unit 187 and the first buffer chamber 191 by heating the flexible substrate S through the drying unit 187 have.

1, the drying unit 187 and the heating unit 189 are shown as being provided in a single unit between the substrate supply roll 111 and the first buffer chamber 191. However, The unit 189 is placed between the substrate supply roll 111 and the first buffer chamber 191 and between the second buffer chamber 193 and the substrate recovery roll 131 in the temperature and surface state of the flexible substrate S You can install as many as you like.

An end position controller 120 may be installed on the side from which the flexible substrate S is unwound from the substrate supply roll 111 and the side from which the flexible substrate S is wound toward the substrate recovery roll 131. The end position controller 120 causes the flexible substrate S to be released from the substrate supply roll 111 while the tension of the flexible substrate S is maintained and the tension of the flexible substrate S controlled by the tension adjusting roller 185 And can be wound on the substrate recovery roll 131 in a state of being held.

1, the processing apparatus 100 includes the first chamber 150, the second chamber 170, and the buffer chamber 190. However, in the present invention, The processing apparatus according to the present invention can be composed of a single chamber C as shown in Fig.

In addition, in this embodiment, the first chamber 150, the second chamber 170, and the buffer chamber 190 are connected in the horizontal direction so that the flexible substrate S is supplied in the horizontal direction toward the second chamber 170 , The processed flexible substrate S is recovered in the horizontal direction from the second chamber 170 toward the first chamber 150. However, the processing apparatus is not limited to the first chamber 150, The second chamber 170 and the buffer chamber 190 are connected in the longitudinal direction so that the flexible substrate S is vertically fed toward the second chamber 170 and the processed flexible substrate S is transferred to the second chamber 170. [ Can be recovered in the vertical direction from the first chamber 150 to the first chamber 150

Hereinafter, a flexible substrate processing method according to the present embodiment will be described with reference to the accompanying drawings.

6 is a flowchart showing a flexible substrate processing method according to this embodiment.

As shown in Fig. 6, the flexible substrate S is provided in the form of a roll and is supported on the substrate supply roll 111. Fig. Thereafter, the process starts as the substrate recovery roll 131 is rotated. Of course, before the process is started, the first chamber 150 is exhausted by the first exhaust pump, the second chamber 170 is exhausted by the second exhaust pump, and the buffer chamber 190 Is exhausted. Accordingly, a process environment in which a low pressure is maintained in the second chamber 170 compared to the first chamber 150 and the buffer chamber 190 may be established (step S11).

Thereafter, the barrier film adhered to the flexible substrate S, which is fed from the substrate feed roll 111, is wound around the barrier discharge roll 113 and discharged therefrom. Then, the flexible substrate S on which the barrier film (B1) is peeled passes through the drying unit 187 and the moisture is removed. The flexible substrate S having passed through the drying unit 187 is heated by the heating unit 171c and the temperature can be stabilized. The flexible substrate S is transferred to the second chamber 170 through the first buffer chamber 191 (step S13). At this time, an inert gas may be introduced into the slip portion 171g.

Thereafter, the flexible substrate S carried into the second chamber 170 is supported on the curved surface of the rotary stage 171 and transported. The plasma generated in the plasma generating portion 173 is generated in the second chamber 170. Here, the bias electrode 173a and the plurality of electrodes 173c disposed in the plurality of process regions can generate plasma for one region of the flexible substrate S being transported.

The flexible substrate S passes through the rotating stage 171, that is, between the bias electrode 173a and the plurality of electrodes 173c, and can be etched or deposited (step S15). At this time, the barrier ribs 175 may divide the area where the plurality of electrodes 173c are disposed to prevent interference between the plasma. Here, the heating unit 171a and the cooling unit 171c can stabilize the temperature of the flexible substrate S by heating or cooling the flexible substrate S, and the plasma sensing unit 177 can stabilize the temperature of the flexible substrate S The time point of generation of the plasma and the time of disappearance of the plasma can be sensed.

In addition, in a plurality of process regions, a series of processes for the flexible substrate S being transferred can be sequentially performed by the pre-process, the main process, and the post-process, so that the flexible substrate S, (S) can be processed.

Subsequently, the completed flexible substrate S is discharged to the first chamber 150 through the second buffer chamber 193. Thereafter, the flexible substrate S is wound around the substrate recovery roll 131. Here, the barrier supply roll 133 supplies the barrier film (B2) to the flexible substrate (S). Thus, the flexible substrate S is protected by the barrier film B2 on its surface and wound on the substrate recovery roll 131 (step S17).

Therefore, the flexible substrate processing apparatus according to the present embodiment and the flexible substrate processing method using the same can not only improve the productivity by using the roll-to-roll system, but also can be applied to a transfer space for transferring the flexible substrate, And the quality of the product can be improved since the process region to be performed is separated.

In addition, although the present embodiment describes that the flexible substrate is continuously supplied to the inside of the second chamber and the continuous process is performed, the processing apparatus controls the transfer of the flexible substrate and the process for the substrate is performed by step by step Step) method.

In addition, the present embodiment is characterized in that the first chamber, the buffer chamber, and the second chamber are laterally connected so that the processing for the flexible substrate is performed in the vertical direction inside the second chamber, but the processing apparatus includes the first chamber, The buffer chamber and the second chamber are connected in the longitudinal direction so that processing for the flexible substrate can be processed horizontally inside the second chamber.

One embodiment of the invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

100: Flexible substrate processing apparatus
110:
130: substrate recovery unit
150: first chamber
170: Second chamber
190: buffer chamber

Claims (20)

A chamber in which a plurality of process regions are formed;
A substrate supply roll disposed inside the chamber to supply a flexible substrate;
A drying unit disposed in the chamber and drying the flexible substrate drawn out from the substrate feed roll to remove moisture present in the flexible substrate;
A substrate recovery roll disposed inside the chamber to withdraw the flexible substrate from the substrate supply roll and recover the flexible substrate;
A rotary stage disposed inside the chamber and supporting the flexible substrate on a curved surface between the substrate supply roll and the substrate recovery roll to rotate and feed the flexible substrate; And
And a plasma generation unit including a bias electrode provided on the stage and an electrode arranged in each of the plurality of process regions,
Wherein plasma is generated by the RF power applied to the bias electrode and the plurality of electrodes in the plurality of process regions.
The method according to claim 1,
Wherein the substrate supply roll and the substrate recovery roll are provided on one side of the rotation stage, the flexible substrate is supplied in a horizontal direction from the substrate supply roll toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And is recovered horizontally toward the recovery roll.
The method according to claim 1,
Wherein the substrate supply roll and the substrate recovery roll are provided at one side of the rotation stage, the flexible substrate is supplied from the substrate supply roll in the vertical direction toward the rotation stage, and the processed flexible substrate is transferred from the rotation stage to the substrate And is vertically recovered toward the recovery roll.
The method according to claim 1,
Wherein the rotating stage is provided with a drum,
Wherein the flexible substrate is supported on a curved surface of the drum.
The method according to claim 1,
Wherein the plurality of electrodes are arranged parallel to the tangent line of the rotating stage so that individual control is possible.
The method according to claim 1,
Further comprising a plasma sensing unit disposed between the plurality of electrodes and the rotation stage for sensing a generation time point and a disappearing time point of the plasma.
The method according to claim 1,
Wherein the plurality of electrodes are adjustable in spacing with respect to the rotation stage.
The method according to claim 1,
Wherein the rotation stage is provided with a slip portion for reducing a frictional force generated between the flexible substrate and the rotation stage,
Wherein the slip section is provided with a first groove formed diagonally with respect to a moving direction of the flexible substrate and a second groove formed with an oblique direction with respect to a moving direction of the flexible substrate and intersecting the first groove The flexible substrate processing apparatus.
9. The method of claim 8,
And an inert gas is introduced into the first and second grooves.
The method according to claim 1,
The chamber
A first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside,
And a second chamber in which the rotation stage and the plasma generation unit are disposed inside.
11. The method of claim 10,
Wherein the second chamber is maintained at a lower pressure than the first chamber.
11. The method of claim 10,
Wherein the chamber further comprises a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber,
Wherein the buffer chamber discharges particles that can flow in from the second chamber to the outside.
The method according to claim 1,
Wherein the process gas introduced into the chamber is an etching gas or a deposition gas.
(a) the flexible substrate is unwound from a substrate feed roll disposed within the chamber and the moisture remaining on the flexible substrate is dried by the drying unit;
(b) the flexible substrate is supported on a curved surface of a rotating stage disposed inside the chamber and rotated;
(c) a bias electrode provided in the rotary stage; and an electrode disposed in each of a plurality of process regions formed in the chamber, each generating plasma on the flexible substrate based on a process gas provided in the plurality of process regions ; And
(d) the flexible substrate is recovered as a substrate recovery roll disposed inside the chamber.
15. The method of claim 14,
Wherein in the step (c), the plurality of electrodes arranged in parallel to the tangent line on the rotating stage are individually controlled so that plasma is sequentially generated with respect to the flexible substrate.
15. The method of claim 14,
Wherein the step (c) includes sensing the generation time point and the disappearing time point of the plasma in each of the plurality of process areas.
15. The method of claim 14,
Wherein the chamber comprises a first chamber in which the substrate supply roll and the substrate recovery roll are disposed inside, and a second chamber in which the rotation stage and the plasma generation portion are disposed inside,
Further comprising: before the step (a), the second chamber is kept at a lower pressure than the first chamber.
18. The method of claim 17,
Wherein the chamber further comprises a buffer chamber disposed between the first chamber and the second chamber and maintained at a higher pressure than the second chamber,
Wherein the buffer chamber discharges particles that can flow from the second chamber to the outside of the buffer chamber.
15. The method of claim 14,
The step (c)
Wherein the flexible substrate is subjected to an etching process or a deposition process.
15. The method of claim 14,
The step (c)
Wherein the pre-processing, the main processing, and the post-processing are sequentially performed on the flexible substrate.

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