KR101545145B1 - Method of manufacturing integrated circuit device package - Google Patents

Abstract

A method of fabricating an integrated circuit device package includes forming an electrical connection on one side of an integrated circuit device having a wafer level size, the electrical connection being connectable to the exterior; Thinning the other surface of the integrated circuit device to form the integrated circuit device into a flexible integrated circuit device having a thickness that can be bent or folded; Wherein the flexible integrated circuit device includes a flexible substrate having a flexible substrate and a flexible substrate on at least one side of the flexible integrated circuit device, Forming an anisotropic conductive film on one side of the anisotropic conductive film; And singulating from the wafer level such that the flexible integrated circuit elements in which the anisotropic conductive film is formed are separated from each other.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing an integrated circuit device package,

The present invention relates to a method of manufacturing an integrated circuit device package, and more particularly, to a method of manufacturing an integrated circuit device package having a flexible structure that can be freely bent or folded.

Currently, the electronics industry is broadening its application range. Accordingly, packaging technology for integrated circuit devices such as semiconductor memories is increasingly demanded for high capacity, thinning, miniaturization and the like, and various solutions for solving the problems are being developed. In particular, in recent years, flexible integrated circuit devices capable of flexing have been developed, and flexible integrated circuit device packages capable of flexing with the above-mentioned integrated circuit devices have been developed.

The applicant of the present invention invented the integrated circuit device package having the flexible structure mentioned above and applied for the patent application No. 10-2012-0043755 (hereinafter referred to as 'the reference document') on April 26, 2012. In the manufacture of the integrated circuit device package disclosed in the cited document, after the thinning process is performed on the integrated circuit device so that the integrated circuit device has a flexible structure, an electrical connection for electrical connection with the integrated circuit device is formed . Particularly, in the wiring process for forming the electrical connection portion mentioned above, laser drilling is performed.

However, as disclosed in the cited document, when the laser drilling or the like is performed after thinning the integrated circuit device, the integrated circuit device can be greatly damaged. This is because the thinning process implements a direct impacting process, such as laser drilling, on an integrated circuit device having a thin thickness by thinning.

Therefore, in the manufacture of the integrated circuit device package having the conventional flexible structure, it is possible to damage the contact circuit device package manufactured thereby by performing a process that can directly impact the integrated circuit device having a thin thickness, As a result, there is a problem that the reliability of the integrated circuit device package may be hindered due to the process stress.

It is an object of the present invention to provide an integrated circuit device package manufacturing method capable of minimizing an impact applied to a flexible integrated circuit device in manufacturing a flexible integrated circuit device having a thin or foldable thin thickness and simplifying a manufacturing process .

According to an aspect of the present invention, there is provided a method of manufacturing an integrated circuit device package, the method comprising: forming an electrical connection portion on an outer surface of an integrated circuit device having a wafer level size; Thinning the other surface of the integrated circuit device to form the integrated circuit device into a flexible integrated circuit device having a thickness that can be bent or folded; Wherein the flexible integrated circuit device includes a flexible substrate having a flexible substrate and a flexible substrate on at least one side of the flexible integrated circuit device, Forming an anisotropic conductive film on one side of the anisotropic conductive film; And singulating from the wafer level such that the flexible integrated circuit elements in which the anisotropic conductive film is formed are separated from each other.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the electrical connection portion includes a pad electrically connected to one surface of the integrated circuit device; An insulating film pattern having a contact hole formed to have a flexible thickness and a flexible material which is bent or folded on one surface of the integrated circuit device and is provided to expose the pad; And bumps formed from the pad to the entrance of the contact hole to be electrically connected to the pad.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the thickness of the lower substrate may be 0.8 to 1.2 times the total thickness of the electrical connection portion and the anisotropic conductive film .

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, attachment of the lower substrate can be achieved by performing a transfer process.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the anisotropic conductive film having a size capable of covering the entire area of the wafer level is used to form the flexible integrated circuit device The anisotropic conductive film can be formed on one surface.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, anisotropic conductive paste is spin-coated so as to cover the entire area of the wafer level, The anisotropic conductive film can be formed on one surface.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, an electrical connection part of the flexible integrated circuit element is formed on an anisotropic conductive film of the flexible integrated circuit element separated by the singulation And forming an upper substrate having a connection wiring electrically connected to the electrical connection portion through the anisotropic conductive film.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, the upper substrate may be formed of a flexible and flexible material that can be bent or folded.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, after a lower substrate made of a flexible and flexible material capable of bending or folding is attached to the other surface of the flexible integrated circuit device, The anisotropic conductive film may be formed on one surface of the flexible integrated circuit device in which the electrical connection portion is formed.

In the method of manufacturing an integrated circuit device package according to an embodiment of the present invention, an anisotropic conductive film is formed on one surface of the flexible integrated circuit device in which the electrical connection portion is formed to be electrically connected in a direction perpendicular to the electrical connection portion It is possible to attach a lower substrate made of a flexible and flexible material which can be bent or folded on the other surface of the flexible IC device.

According to the manufacturing method of the integrated circuit device package of the present invention, after the wiring process for forming the electrical connection portion is performed in the manufacture of the integrated circuit device package having the flexible or foldable flexible structure, the integrated circuit device is formed to have a thin structure And performs a thinning process. That is, in the method of manufacturing an integrated circuit device package of the present invention, a wiring process for forming an electrical connection portion is performed on an integrated circuit device having a relatively thick thickness. Particularly, in the case of a wiring process, a photolithography process and the like can be performed instead of laser drilling.

Therefore, in the case of the integrated circuit device package obtained by the manufacturing method of the present invention, since the impact applied to the integrated circuit device can be relatively reduced, the damage to the integrated circuit device can be minimized, It is expected that the reliability of the integrated circuit device package can be improved by sufficiently reducing it.

According to the method of manufacturing an integrated circuit device package of the present invention, the anisotropic conductive film can bond the electrical connection portion formed on one surface of the flexible IC device and the upper substrate.

As described above, in the present invention, by using the anisotropic conductive film, the flexible integrated circuit element and the upper substrate can be bonded together with the electrical connection between the flexible integrated circuit element and the upper substrate, so that the process can be simplified. As a result, An improvement in productivity due to the manufacture of the integrated circuit device package can be expected.

1 to 5 are cross-sectional views schematically showing a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.
6 is a view for explaining a process of transferring a lower substrate in FIG. 3 in a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.
FIGS. 7 and 8 are views for explaining a process of forming the anisotropic conductive film of FIG. 4 in the method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

While the present invention has been described in connection with certain exemplary embodiments, it is obvious to those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "comprising ", etc. is intended to specify that there is a stated feature, figure, step, operation, component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

1 to 5 are cross-sectional views schematically showing a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

Referring to FIG. 1, an electrical connection portion 47 is formed on one surface of the integrated circuit device 40, which is electrically connectable to the outside.

Here, examples of the integrated circuit device 40 include semiconductor devices such as memory devices and non-memory devices, and active devices and passive devices. The integrated circuit device 40 can be obtained by forming circuit patterns and the like having various structures on a semiconductor substrate 41 made of a silicon material. In addition, the integrated circuit element 40 may have a wafer level size, and can then perform a fabrication process to obtain an integrated circuit device package at the wafer level. Therefore, the integrated circuit device 40 in the present invention can perform a manufacturing process for obtaining an integrated circuit device package in a state having a wafer-level structure, not separately separated, and can perform singulation ) ≪ / RTI > process.

Thus, since the fabrication of the integrated circuit device package of the present invention can be performed at the wafer level, it is possible to improve the process efficiency according to the manufacture of the integrated circuit device package. This is because when manufacturing an integrated circuit device package for an integrated circuit device (not shown) having a structure that is separately separated as compared with the case of manufacturing the integrated circuit device package for the wafer level structure integrated circuit device 40 Handling is not easy.

The electrical connection portion 47 includes a pad 43 electrically connected to the circuit pattern mentioned above on one side of the integrated circuit element 40, that is, the semiconductor substrate 41 on which the circuit pattern is formed, the integrated circuit element 40 An insulating film pattern 45 having a contact hole provided to expose the pad 43 and having a flexible thickness and a flexible material which can be bent or folded on one surface of the pad 43, And a bump 46 formed from the pad 43 to the entrance of the contact hole to be connected. That is, the electrical connection 47 in the present invention can include the pad 43, the insulating film pattern 45, and the bump 46, so that the pad 43 and the bump 46 are applied as electric wiring And the insulating film pattern 45 can be applied as an interlayer insulator.

The electrical connection portion 47 mentioned above can be obtained by performing the following process.

The insulating film pattern 45 having contact holes exposing the integrated circuit elements 40, that is, the pads 43 on one surface of the semiconductor substrate 41 on which the circuit pattern is formed, is formed. The insulation film pattern 45 may be obtained by forming an insulation film on one surface of the integrated circuit device 40 on which the pad 43 is formed and then performing a photolithography process using the photoresist as a mask.

Then, the bump 46 is formed in the contact hole of the insulating film pattern 45. The formation of the bump 46 referred to above is achieved primarily by filling the conductive material to form bumps 46 in the contact holes. At this time, the bump 46 may be formed to fill from the pad 43 to the entrance of the contact hole. The pad 43 may be electrically connected to the outside by the bump 46 mentioned above.

In the present invention, by performing a process such as a photolithography process or the like before forming a structure such as the electrical connection portion 47 on the integrated circuit device 40 with a flexible integrated circuit device having a flexible or foldable thickness to be described later .

Therefore, in the manufacturing method of the integrated circuit device package of the present invention, a small impact is applied to the flexible integrated circuit device as compared with the conventional photolithography process, laser drilling process, and the like. In particular, in the method of manufacturing the integrated circuit device package of the present invention, a small impact may be applied even if a laser drilling process is performed instead of the photolithography process. This is because the photolithography process, the laser drilling process, and the like are performed on the integrated circuit device 40 having a relatively thick thickness as compared with the flexible integrated circuit device.

Therefore, as described in the present invention, since the photolithography process, the laser drilling process, and the like that can be impacted before forming the flexible integrated circuit device are performed, the reliability of the integrated circuit device package having the flexible structure, .

Further, in the case of the insulating film pattern 45 in the electrical connection portion, it is made of a flexible thickness and a flexible material which can be bent or folded as mentioned above. Thus, the insulating film pattern 45 may have a film structure.

In the case of the bump 46 in the electrical connection part, it is made of a flexible material. Accordingly, the bump 46 can be made of a metal material having excellent ductility.

As described above, in the present invention, the integrated circuit device package described later can have a flexible structure by forming the electrical connection portion 47 to have a flexible thickness and a flexible material.

Referring to FIG. 2, the other surface of the integrated circuit device 40 is thinned. That is, the semiconductor substrate 41 is thinned to have a thin thickness. As described above, in the present invention, the integrated circuit element 40 is formed of a flexible integrated circuit element 53 having a thickness that can be bent or folded by thinning the other surface of the integrated circuit element 40. And reference numeral 55 denotes a semiconductor substrate of a silicon material having a thin thickness for manufacturing the flexible integrated circuit element 53. [

Here, the thickness of the flexible integrated circuit element 53 which can be bent or folded may be about 1.0 to 50 mu m. That is, the integrated circuit device 40 is thinned to a thickness of about 1.0 to 50 μm. If the thickness is less than about 1.0 占 퐉, it is not preferable because the flexible integrated circuit element 53 is not easily handled because it is too thin, and if the thickness exceeds about 50 占 퐉, the flexible integrated circuit element 53 is bent It is not preferable because it has no foldable structure.

Referring to FIG. 3, a lower substrate is attached to the other surface of the flexible IC device 53. That is, the lower substrate 51 for packaging is attached to the other surface of the flexible IC device 53. The substrate 51 mentioned above is also made of a flexible thickness and a flexible material. Thus, examples of the lower substrate 51 include a lead frame, a printed circuit board, and a flexible printed circuit board, which are made of a flexible thickness and a flexible material.

As described above, in the present invention, the lower substrate 51 made of flexible and flexible material is attached to the other surface of the flexible IC device 53 so that the flexible IC device 53 is packaged, thereby obtaining the integrated circuit device package 63 can do. Particularly, since the integrated circuit device package 63 in the present invention has the electric connection portion 47, the flexible integrated circuit element 53 and the lower substrate 51 made of flexible thickness and flexible material, the integrated circuit device package 63 ) Itself can be flexible enough to bend or fold. Thus, the integrated circuit device package 63 of the present invention can also have a bent or folded structure.

The lower substrate 51 may be attached to the other surface of the flexible IC device 53_ by performing a transfer process.

Hereinafter, the transfer process for attaching the lower substrate 51 will be described.

6 is a view for explaining a process of transferring a lower substrate in FIG. 3 in a method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

Referring to FIG. 6, a transfer material 200 to which a flexible integrated circuit element 53 is attached is provided on a first adhesive tape 203. Here, the first adhesive tape 203 may be provided so as to have an adhesive strength somewhat weaker than the original adhesive force of the first adhesive tape 203 by ultraviolet ray irradiation, heating, or the like. The first adhesive tape 203 mentioned above may include a curable adhesive tape which is weakened in adhesion when irradiated with ultraviolet rays or heated. Examples of the above-mentioned curable adhesive tape include an ultraviolet curable adhesive tape, a thermosetting adhesive tape and the like.

The first adhesive tape 203 has a structure in which the peripheral edge portion is supported by the ring frame 205. The transfer material 200 including the flexible integrated circuit element 53 attached to the first adhesive tape 203 on which the peripheral portion is supported by the ring frame 205 is placed on the plate 11. [

The plate 11 on which the transfer material 200 to which the flexible integrated circuit element 53 is attached is attached to the first adhesive tape 203 in a state of supporting the ring frame 205 by using the frame supporting portion 15 Tension can be applied to the first adhesive tape 203 by moving the chuck table 13 up and down. Here, applying tension to the first adhesive tape 203 is intended to more easily detach the flexible integrated circuit element 53 from the first adhesive tape 203.

Further, the plate 11 on which the transfer material 200 is placed is conveyed in the first direction. At this time, the transfer of the plate 11 may be performed by the plate 11 itself, or may be performed using the transfer unit 31 or the like.

The second adhesive tape 301 is fed and collected along the roller 21 of the attaching / detaching portion 19. At this time, the roller 21 of the attaching / detaching unit 19 may be provided so as to rotate in the second direction from the first direction. In addition, the supply and recovery of the second adhesive tape are made by the members denoted by reference numerals 23 and 25.

Here, the second adhesive tape 301 mentioned above may include a curable adhesive tape such as an ultraviolet curable adhesive tape, a thermosetting adhesive tape or the like which is the same as the first adhesive tape 203. In addition, in the case of the second adhesive tape 301, since the ultraviolet ray irradiation or heating is not performed, the adhesive force of the second adhesive tape 301 can be higher than that of the first adhesive tape 203.

As described above, the plate 11 is fed in the first direction and the attachment / detachment unit 19 is rotated in the second direction from the first direction to attach / detach the attachment / detachment unit 19 and the transfer material 200 in the first region The flexible integrated circuit element 53 is brought into contact. At this time, the adhesive force of the second adhesive tape 301 on the attaching / detaching unit 19 is greater than the adhesive force of the first adhesive tape 203 on which the flexible IC device 53 is attached, The flexible integrated circuit element 53 is transferred and attached to the second adhesive tape 301 because tension is applied.

The flexible integrated circuit element 53 to be transferred to the second adhesive tape 301 of the attaching / detaching unit 19 is moved in the second direction from the first direction in accordance with the rotation of the roller 21 of the attaching / detaching unit 19 Rotate. At this time, the original adhesive force of the second adhesive tape 301 is weakened by using the adhesive strength weakening portion 29. That is, ultraviolet ray irradiation or heating is performed on the second adhesive tape 301 by using the adhesive strength weakening section 29, so that the original adhesive force of the second adhesive tape 301 can be weakened. Thus, the second adhesive tape 301 can have a weakened adhesive force than the original adhesive force.

The flexible integrated circuit element 53 to be transferred to the second adhesive tape 301 is brought into contact with the lower substrate 51 which is conveyed in the second direction in the second direction in accordance with the rotation of the roller 21 as mentioned above.

In this way, the lower substrate 51 is transferred in the second direction and the detachable attachment 19 is rotated in the second direction from the first direction, so that the lower substrate 51 and the second adhesive tape 301 Is brought into contact with the flexible integrated circuit element 53 attached thereto.

The flexible integrated circuit element 51 mentioned above can be transferred and attached from the first adhesive tape 203 of the transfer material 200 to the lower substrate 51.

Therefore, by carrying out the transfer process of the present invention, the integrated circuit device package 63 can be obtained by attaching the lower substrate 51 to the other surface of the flexible IC device 53 as shown in FIG.

Although not shown, a die attach bonding film can be used in the above-mentioned transfer step. That is, the transfer process can be performed by interposing a die attach bonding film between the lower substrate 51 and the flexible IC device 53. [

Referring again to FIG. 3 and FIG. 4, an anisotropic conductive film 57 is formed on one side of the flexible integrated circuit device 53 to which the lower substrate 51 is attached on the other side. That is, the anisotropic conductive film 57 is formed on one surface of the flexible integrated circuit element 53 in which the electrical connection portion 47 is formed.

Hereinafter, the process for forming the anisotropic conductive film 57 will be described.

FIGS. 7 and 8 are views for explaining a process of forming the anisotropic conductive film of FIG. 4 in the method of manufacturing an integrated circuit device package according to an embodiment of the present invention.

7, an anisotropic conductive film (not shown) is formed on one surface of the flexible integrated circuit device 53 of the wafer level integrated circuit device package 63 using an anisotropic conductive film having a size capable of covering the entire area of the wafer level The film 57 can be formed.

8, on the one surface of the flexible integrated circuit element 53 of the wafer-level integrated circuit device package 63, by performing spin coating of the anisotropic conductive paste so as to cover the entire area of the wafer level, The conductive film 57 can be formed.

In particular, the above-mentioned spin coating can be achieved by a rotary chuck 81 capable of rotating a wafer level integrated circuit device package 63, and by the rotation of the rotary chuck 81 mentioned, The anisotropic conductive film 57 is provided on one surface of the flexible integrated circuit element 53 of the integrated circuit device package 63 by being provided from the central area on one surface of the flexible integrated circuit element 53 of the circuit element package 63 to the peripheral area, Can be formed.

Referring again to FIG. 4, the above-mentioned anisotropic conductive film 57 uniformly disperses conductive particles serving as electricity in an adhesive organic material having insulating properties and forms it in a film form, It may have conductivity in the thickness direction, and may have insulating property in the longitudinal direction of the film form. That is, the anisotropic conductive film 57 can be electrically connected only in one direction. In addition, since the anisotropic conductive film 57 can also be provided in the form of a film, it can have a flexible material property that can be bent or folded.

Thus, by forming the anisotropic conductive film 57 in the present invention, electrical connection can be made in a direction perpendicular to the electrical connection part 47 of the flexible IC device 53. [

The provision of the anisotropic conductive film 57 as referred to in the present invention electrically connects between the electrical connection 47 of the integrated circuit device package 63 and the connection wiring of an upper substrate to be described later, 57) to adhere the upper substrate.

Therefore, since the integrated circuit device package 63 of the present invention is provided with the above-described anisotropic conductive film 57, adhesion of the upper substrate can be attained together with electrical connection, so that the process can be simplified.

As mentioned above, since the anisotropic conductive film 57 also has a bent or folded structure, the integrated circuit device package 63 in which the anisotropic conductive film 57 is formed can also have a bent or folded structure have.

In the integrated circuit device package 63 manufactured according to the present invention, the total thickness L2 of the electrical connection portion 47 and the anisotropic conductive film 57 and the thickness L1 of the lower substrate 51 should be related to each other. This is because if the tensile force is applied to the entirety of the electrical connection portion 47 and the anisotropic conductive film 57 with the flexible integrated circuit element 53 as a neutral plane when the integrated circuit device package 63 is bent, And a tensile force is applied to the lower substrate 51 when a compressive force is applied to the entirety of the electrical connection portion 47 and the anisotropic conductive film 57. As described above, if the total thickness L2 of the electrical connection portion 47 and the anisotropic conductive film 57 and the thickness L1 of the lower substrate 51 are not related to each other, the integrated circuit device package 63 may be bent A situation may occur in which the entire electrical connection portion 47 and the anisotropic conductive film 57 or the lower substrate 51 are damaged.

Therefore, the thickness L1 of the lower substrate 51 is preferably about 0.8 to 1.2 times, and more preferably about 0.9 to 1.1 times, based on the total thickness L2 of the electrical connection portions 47 and the anisotropic conductive film 57 .

And performs the singulation from the wafer level. In this case, the singulation mentioned above may be achieved by irradiation of a laser, or may be achieved by carrying out a sowing process using a diamond wheel. As described above, in the present invention, the flexible integrated circuit element 53, that is, the integrated circuit device package 63, on which the anisotropic conductive film 47 is formed can be separated from each other by performing singulation from the wafer level.

5, an electrical connection portion 47 of the flexible integrated circuit element 63 is formed on the anisotropic conductive film 57 of the flexible integrated circuit element 53 of the integrated circuit element package 63 separated by being singulated, And an interconnection line 61 electrically connected to the electrical connection part 47 through the anisotropic conductive film 57. The upper substrate 62 is formed of a conductive material such as silicon nitride or the like.

In the case of the above-mentioned upper substrate 62, it may be made of a flexible thickness and a flexible material which can be bent or folded. In particular, examples of the above-mentioned upper substrate 62 include a flexible printed circuit board and the like. Accordingly, the integrated circuit device package 63 of the present invention can have a flexible structure that can be bent or folded as a whole.

In addition, although the above-described upper substrate 62 is described as being formed after singulation, it is also possible to perform singulation after the upper substrate 62 is formed. That is, after the upper substrate 62 is formed at the wafer level, singulation is performed to separate the integrated circuit device package 63 from each other.

In the present invention, after the lower substrate 51 made of a flexible and flexible material capable of bending or folding on the other surface of the flexible integrated circuit device 63 is attached, The anisotropic conductive film 57 is formed on one surface of the flexible integrated circuit element 63 in which the electrical connection portion 47 is formed so as to be connected to the electrical connection portion 47. However, After the anisotropic conductive film 57 is formed on one surface of the flexible integrated circuit element 63 in which the electrical connection portion 47 is formed so as to be electrically connected to the flexible integrated circuit element 63 in the direction It is possible to attach the lower substrate 51 made of a flexible thickness and a flexible material.

As described above, according to the present invention, after the wiring process for obtaining the integrated circuit device package with the flexible structure is performed, the integrated circuit device is thinned to have a thin structure, Since the damage can be minimized and the process stress can be sufficiently reduced, the reliability of the integrated circuit device package can be improved, and as a result, an improvement in product competitiveness can be expected.

Further, in the present invention, by using the anisotropic conductive film, since the flexible integrated circuit element and the upper substrate can be bonded together with the electrical connection between the flexible integrated circuit element and the upper substrate, the process can be simplified, The productivity according to the manufacture of the package can be improved, and as a result, the price competitiveness can be expected to be improved.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

40: integrated circuit element 41, 55: silicon substrate
43: pad 45: insulating film pattern
46: Bump 47: Electrical connection
51: lower substrate 53, 63: flexible integrated circuit element
57: anisotropic conductive film 61: connection wiring
62: upper substrate 81: rotary chuck

Claims (10)

Forming an electrical connection capable of being electrically connected to the outside on one surface of the integrated circuit device having a wafer level size;
Thinning the other surface of the integrated circuit device to form the integrated circuit device into a flexible integrated circuit device having a thickness that can be bent or folded;
Wherein the flexible integrated circuit device includes a flexible substrate having a flexible substrate and a flexible substrate on at least one side of the flexible integrated circuit device, Forming an anisotropic conductive film on one side of the anisotropic conductive film;
Singing from the wafer level such that the flexible integrated circuit elements in which the anisotropic conductive film is formed are separated from each other; And
And a connection wiring which is disposed on the anisotropic conductive film of the flexible integrated circuit device separated by the singulation and which is disposed to face the electrical connection portion of the flexible integrated circuit device and is electrically connected to the electrical connection portion via the anisotropic conductive film, And forming an upper substrate on which the integrated circuit device package is mounted . The electronic apparatus according to claim 1,
A pad electrically connected to one surface of the integrated circuit device;
An insulating film pattern having a contact hole formed to have a flexible thickness and a flexible material which is bent or folded on one surface of the integrated circuit device and is provided to expose the pad; And
And bumps formed from the pads to the openings of the contact holes to be electrically connected to the pads. 2. The method of claim 1, wherein the thickness of the lower substrate is 0.8 to 1.2 times the thickness of the electrical connection portion and the anisotropic conductive film. 2. The method of claim 1, wherein attachment of the lower substrate is accomplished by performing a transfer process. The anisotropic conductive film according to claim 1, wherein the anisotropic conductive film is formed on one surface of the flexible integrated circuit device at the wafer level using the anisotropic conductive film having a size capable of covering the entire area of the wafer level Of the integrated circuit device package. The anisotropic conductive film of claim 1, wherein the anisotropic conductive film is formed on one surface of the flexible integrated circuit device at the wafer level by spin coating an anisotropic conductive paste so as to cover the entire area of the wafer level Of the integrated circuit device package. delete The method of claim 1, wherein the upper substrate is made of a flexible and flexible material that can be bent or folded. 2. The flexible integrated circuit device according to claim 1, wherein after attaching a lower substrate made of flexible and flexible material capable of bending or folding to the other surface of the flexible integrated circuit device, Wherein an anisotropic conductive film is formed on one surface of the flexible integrated circuit element to be formed. 2. The flexible integrated circuit device according to claim 1, wherein an anisotropic conductive film is formed on one surface of the flexible integrated circuit device in which the electrical connection portion is formed to be electrically connected in a direction perpendicular to the electrical connection portion, Wherein the lower substrate is made of flexible thickness and flexible material that can be bent or folded.

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