KR101528243B1 - Apparatus of evaporation and control method the same - Google Patents

Abstract

The present invention relates to a deposition apparatus and a control method thereof, and more particularly, to a deposition apparatus having a plurality of reaction chambers and a control method thereof.
A deposition apparatus according to the present invention includes: a first chamber set to deposit a first deposition material on an evaporated material; A second chamber set to deposit a second deposition material different from the first deposition material on the deposition target; A third chamber set to deposit the first deposition material on the deposition target; A transfer chamber connected to the first to third chambers and adapted to supply the object to be deposited to at least one of the first to third chambers; And a control unit for transferring the object to be deposited from the transfer chamber to one of the first to third chambers to perform deposition.

Description

Apparatus of evaporation and control method thereof

The present invention relates to a deposition apparatus and a control method thereof, and more particularly, to a deposition apparatus having a plurality of reaction chambers and a control method thereof.

[0002] Recently, with the rapid development of information and communication technology and the expansion of the market, a flat panel display (FPD) has attracted attention as a display device. Examples of such flat panel display devices include a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (OLED).

Among these organic electroluminescent devices, organic electroluminescent devices have very good advantages such as high response speed, low power consumption and light weight compared to conventional liquid crystal display devices, and a need for a separate backlight device, And is receiving the spotlight as a next generation display device.

Such an organic light emitting device is a principle in which an appropriate amount of energy is formed in the organic thin film layer by applying a positive electrode layer, an organic thin film layer and a negative electrode layer on the substrate in order and applying a voltage between the anode and the cathode. That is, the injected electrons recombine with the holes, and the excitation energy that remains is generated by the light. At this time, since the organic light emitting diode can control the wavelength of light generated according to the amount of the dopant of the organic material, full color can be realized.

The detailed structure of the organic light emitting device includes an anode, an anode, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL), an electron injection layer (EIL), and a cathode layer (CIL) are stacked in this order. The light emitting layer (EML) is formed by subdividing into a red light emitting layer (REML), a green light emitting layer (GEML) and a blue light emitting layer (BEML) (Hole Blocking Layer) are selectively formed.

Common methods for forming such thin films on a substrate include vacuum deposition, ion plating, sputtering, and chemical vapor deposition (CVD). Among these, in the vapor deposition of the organic film and the cathode of the organic light emitting element, a substrate is usually mounted in a vacuum chamber, the evaporation material to be adhered to the surface of the substrate is vaporized, and the vaporized evaporation material is condensed on the substrate surface A vacuum deposition method is mainly used.

The deposition apparatus for manufacturing the organic light emitting device panel according to the prior art has at least one cluster structure.

Here, the clusters have a structure in which a plurality of reaction chambers for deposition of an evaporation material are disposed around a transport chamber for transporting the evaporation material. Wherein each of the reaction chambers has a different kind of evaporation source for depositing different deposition layers.

Such a vapor deposition apparatus is provided with only one reaction chamber corresponding to each kind of vapor deposition layer, so that when a problem occurs in one of the reaction chambers or when the alignment error or speed of the substrate entering the reaction chamber is unstable, There is a problem that the cluster or the entire deposition line must be shut down due to one reaction chamber in a state in which the reaction chamber can not be used. Therefore, the resulting economic loss is large.

Also, since only one reaction chamber is used for one deposition reaction, the number of OLED panels that can be produced during a constant tact time is limited. On the other hand, a proposal for a method to maximize the productivity even in the same tact time was urgent.

In addition, conventionally, the deposition time and the deposition rate were adjusted in order to make the thickness of the deposition layer different. For example, in order to form the deposition layer thicker, the thickness of the deposition layer was adjusted by depositing the sample or increasing the deposition rate for a long time while keeping the substrate in the reaction chamber for a long time. However, such a method has a problem in that the efficiency is poor compared with the case where the tact time is lengthened and the waste of the evaporation material is severe.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus and a control method thereof, and more particularly, to a deposition apparatus having a plurality of reaction chambers and a technique for reducing the economic loss and providing a more efficient process through the control method.

According to an embodiment of the present invention, there is provided a plasma processing apparatus comprising: a first chamber set to deposit a first deposition material on an evaporated material; A second chamber set to deposit a second deposition material different from the first deposition material on the deposition target; A third chamber set to deposit the first deposition material on the deposition target; A transfer chamber connected to the first to third chambers and adapted to supply the object to be deposited to at least one of the first to third chambers; And a controller for transferring the object to be deposited from the transfer chamber to one of the first to third chambers to perform deposition. And a deposition apparatus.

Here, the control unit may selectively transfer the object to be deposited from the transfer chamber to the first chamber or the third chamber to perform deposition.

Wherein the control unit sequentially transfers the object to be deposited from the transfer chamber to the first chamber and the third chamber to perform deposition.

According to an embodiment of the present invention, there is provided a plasma processing apparatus comprising: a plurality of deposition chambers set to deposit different materials on an object to be deposited; A preliminary chamber set to the same condition as any one of the deposition chambers;

A control unit for depositing the object to be deposited in one of the deposition chamber and the preliminary chamber to advance the deposition; And a deposition apparatus.

Here, the control unit sequentially deposits the object to be deposited in the deposition chamber and the preliminary chamber to proceed the deposition.

According to an embodiment of the present invention, the third chamber may be set to the same condition as the first chamber. Depositing a first evaporation material by supplying a first evaporation material to a first chamber; Depositing a second evaporation material different from the first material by supplying the first evaporation material to the second chamber; Depositing a first evaporated material by supplying a second evaporated material to the first chamber or the third chamber; And depositing a second deposition material different from the first material by supplying the second deposition material into the second chamber; And a control device for controlling the deposition device.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: depositing a first evaporation material by supplying a first evaporation material to a first chamber; Depositing a second evaporation material different from the first material by supplying the first evaporated material to the second chamber; setting a third chamber to the same condition as the first chamber; Depositing a first evaporated material by supplying a second evaporated material to the third chamber; And depositing a second evaporation material by supplying the second evaporation material to the second chamber.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: setting a third chamber to the same condition as the first chamber; Depositing a first evaporation material by supplying a first evaporation material to a first chamber; Depositing a second evaporation material different from the first material by supplying the first evaporation material to the second chamber; Depositing a first evaporated material by supplying a second evaporated material to a chamber of the first or third chamber in which deposition conditions have been set; And depositing a second evaporation material by supplying the second evaporation material to the second chamber.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: setting a third chamber to the same condition as the first chamber; Depositing a first deposition material by supplying an evaporated material to the first chamber; Depositing a first deposition material by supplying the deposited material to the third chamber; And depositing a second evaporation material different from the first material by supplying the evaporation material to the second chamber.

According to an embodiment of the present invention, the third chamber may be set to the same condition as the first chamber. Depositing a first evaporation material by supplying a first evaporation material to a first chamber; Depositing a first evaporation material on the first evaporation material supplied to the third chamber; Depositing a second evaporation material different from the first material by supplying the first evaporation material to the second chamber; Depositing a first deposition material on the second deposition material by sequentially supplying the first deposition material to the first chamber and the third chamber; And depositing a second deposition material different from the first material by supplying the second deposition material into the second chamber; And a control device for controlling the deposition device.

Such general and specific aspects may be practiced using apparatuses, methods, computer programs, or any combination of apparatus, methods, and computer programs.

According to the embodiment of the present invention, since a plurality of reaction chambers are provided for one deposition reaction, there is an advantage that the cluster or the entire line is not interrupted even if some reaction chambers can not be used.

Further, since a plurality of reaction chambers are provided, productivity can be maximized.

1 is a schematic view showing a deposition apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view showing a reaction chamber included in a deposition apparatus according to an embodiment of the present invention. FIG.
FIGS. 3 to 5 are flowcharts illustrating a method of controlling a deposition apparatus according to an embodiment of the present invention. FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, an embodiment of a deposition apparatus according to the present invention will be described in detail with reference to the accompanying drawings. Referring to the accompanying drawings, the same or corresponding components are denoted by the same reference numerals, Is omitted.

FIG. 1 is a schematic view showing a deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic view showing the structure of a reaction chamber 6 included in a deposition apparatus of the present invention.

As shown in FIG. 1, the deposition apparatus according to the present invention includes an evaporation material supply part 1 for supplying an evaporation material for manufacturing an organic light emitting device, and an evaporation material transported from the evaporation material supply part And a plurality of clusters (2, 3, 4) to be processed for each manufacturing process by an evaporation material deposition program stored in the apparatus. Although the first to third clusters are shown in Fig. 1, the number of clusters is not limited thereto.

Each cluster is composed of a transfer chamber 5, a reaction chamber 6, and a spare chamber 6a, and has a control unit (not shown) for collectively controlling each component.

The transfer chamber 5 is located at the central portion of the clusters 2, 3, 4 and is connected to the plurality of reaction chambers 6. The deposited body is transferred to the reaction chamber 6 through the transfer chamber 5 and the transfer chamber 5 is connected to the transfer mechanism 6 for transferring the object to be deposited on the one reaction chamber 6 onto the other reaction chamber 6 5a.

A control unit (not shown) collectively controls the entire deposition apparatus to transfer the object to be deposited from the transfer chamber 5 to one of the plurality of reaction chambers 6 to perform deposition.

One or more reaction chambers 6 are present per cluster, and are located around the transfer chamber 5. Each of the reaction chambers 6 is provided with a different kind of evaporation source for depositing different evaporation layers on the evaporation body. That is, although a plurality of reaction chambers 6 are shown in FIG. 1, there is no reaction chamber having the same vapor source.

The preliminary chamber 6a has the same structure and function as the reaction chamber 6 and may be provided at least one per cluster. The preliminary chamber 6a may be disposed between the reaction chambers 6 and is not limited to the position shown. The preliminary chamber 6a is set in the same condition as any one of the plurality of reaction chambers 6, that is, it is provided with the same evaporation source as some of the reaction chambers 6, .

Referring to FIG. 2, the structure of the reaction chamber 6 is as follows. The preliminary chamber 6a has the same or similar structure as the reaction chamber 6 described below, so a detailed description thereof will be omitted. Also, the structure of the reaction chamber according to the present invention may be such that the substrate supporting unit rotates as shown in FIG. 2, but the present invention is not limited thereto, and other structures other than the evaporation source moving system may be adopted.

The inside of the reaction chamber 6 is kept in a vacuum and can have an inlet 11 on one side and an outlet 12 on the other side and the reaction chamber 6 can be connected to the reaction chamber 6 through the inlet 11 and the outlet 12. [ The substrate transfer means 13 can be disposed so as to penetrate the substrate.

A substrate supporting part may be mounted on the substrate transferring part so that the substrate supporting part can be rotatably rotated. The substrate 100 on which the deposition material is to be deposited is transferred into the reaction chamber 6 by the substrate transferring part 13, ) And mounted in the chamber. The substrate supporting unit 14 may be installed separately from the substrate transferring unit 13 and mounted inside the reaction chamber 6.

An evaporation source 20 is installed in the reaction chamber 6 opposite to where the substrate supporting part 14 is disposed. The evaporation source 20 deposits the evaporation material as the evaporation material is received, heated and vaporized. At least one evaporation source 20 can be installed, and includes at least one evaporation furnace for containing the evaporation material and a separate heating means for heating the evaporation furnace. The evaporation source 20 can be installed on a separate mounting table 15. [

Conventionally, only one reaction chamber for forming one deposition layer is provided, so that any one of the reaction chambers performs periodic maintenance, malfunctions, or when the alignment state or speed of the substrate loaded into the reaction chamber is unstable When the reaction chamber can not be used, there is a problem that the entire cluster or the deposition apparatus must be stopped. On the other hand, the deposition apparatus according to the present invention can perform the deposition reaction in place of the reaction chamber 6 which can not be used by providing at least one spare chamber 6a per cluster. Therefore, there is a feature that the conventional problems can be solved and non-stop deposition can be performed.

Also, conventionally, since only one reaction chamber 6 is used for one deposition reaction, the number of OLED panels that can be produced during a constant tact time is limited. However, since the pre-chamber 6a of the present invention is provided, the same deposition reaction can be performed in a plurality of chambers during a constant tact time, thereby improving the productivity.

In addition, the deposition apparatus according to the present invention may include a stock chamber 7 for storing a mask. In addition, two transfer buffer chambers 8 for transferring the objects to be deposited can be provided between the deposition source supplying section 1 and the first cluster 2, And a rotary buffer chamber 9 for rotating the chamber 8 and the evaporation body.

3 to 5 are flowcharts illustrating a control method of a deposition apparatus according to an embodiment of the present invention.

Assuming A to E reaction chambers having respective evaporation sources to form a to e vapor deposition layers as shown in Table 1 below, V, W, X with evaporation sources of any one of a to e , Y, and Z, respectively.

Types of deposition materials a b c d e Type of reaction chamber A B C D E Types of reserve chambers V, W, X, Y, Z

Referring to FIG. 3, the method for controlling a deposition apparatus according to the present invention is characterized in that a spare chamber is used instead of the reaction chamber.

S301, the first evaporated substance to be deposited is prepared. The first object to be deposited may be subjected to a pretreatment process of cleaning and processing before deposition.

S302, the first evaporated material is introduced into the chamber A, and the reaction of evaporating the a material proceeds. S303, the first evaporated material formed with the evaporation layer containing a material is supplied to the B chamber to form a vapor deposition layer of the evaporation material b. The first deposited material having the a deposition layer and the b deposition layer formed in step S304 is charged into the C chamber to deposit the c material and the first deposited material is charged into the D chamber and the E chamber in steps S305 and S306, The material and the e-material are deposited in sequence.

According to S307 and S308, the X chamber as the preliminary chamber is set to the same deposition condition as the A chamber, and the Y chamber is set to the same deposition condition as the C chamber. In this process, the impurities in the chamber are removed, the deposition source is introduced, the deposition plate is replaced, and the deposition source is heated to perform the deposition reaction. The conditions for providing the spare chamber such as the X chamber and the Y chamber, as in the case of the A chamber and the C chamber, include a case where the reaction chamber is periodically repaired, the evaporation source is consumed and maintenance is required, This is the case where suspension is required.

S309, a second body to be deposited is prepared. The second substance to be deposited is put into the X chamber by S310 to deposit a material. In step S311, the A-chamber can adjust the deposition conditions, perform periodic maintenance work, and introduce the substrate regardless of the production of the normal line, irrespective of the deposition process of the second substance to be deposited.

According to S312, the second substance to be deposited with the substance a is deposited in the B chamber to deposit the substance b. According to S313, the second body to be deposited is put into the Y chamber to deposit the substance C. In this case, the C chamber can perform the maintenance work similarly to the A chamber.

S315 and S316, the second substance to be deposited is sequentially injected into the D chamber and the E chamber to deposit the substance d and the substance e.

When a case in which a particular reaction chamber can not be used as described above is detected, the preparatory chamber is operated in place of the reaction chamber, and the deposited body is put into the preliminary chamber, whereby the corresponding cluster or the entire process It solves the problems that had to be stopped and has the advantage of non-stop deposition.

The method of controlling a deposition apparatus according to another embodiment of the present invention as shown in FIG. 4 is characterized in that a preliminary chamber and a reaction chamber are simultaneously used to simultaneously perform a deposition reaction on one or more substrates.

The first deposited material and the second deposited material are prepared by S401. There may be a plurality of evaporation sources, and the number of evaporation sources is not limited to two.

The deposition conditions are set to be the same so that the preparatory chambers V, W, X, Y and Z chambers correspond to the reaction chambers A, B, C, D and E chambers, respectively, by S402 to S406. Thereby, one or more chambers capable of forming the a to e deposition layers can be present.

The priority order of the A chamber and the V chamber under the same deposition condition is confirmed by S407. In this case, the priority is a condition for determining to which chamber the first evaporated material is to be put. Here, the first substance to be evaporated may be an evaporated substance designated by the engineer, or may be an evaporated substance which arrives first in the transporting chamber among the plurality of evaporated substances. Priority may be that the first of the plurality of chambers having the same deposition condition has a higher priority, and the particular chamber designated by the engineer may have a higher priority.

In step S408, when the A chamber takes precedence, the first evaporated material is introduced into the A chamber to deposit a material. In step S409, the second evaporation material is introduced into the V chamber having a small priority, and a material is evaporated.

If the V chamber is prioritized by S410, the first substance to be deposited is put into the V chamber to deposit a material. In step S411, the second evaporation material is introduced into the A chamber having a lower priority, and a material is evaporated.

In S412, the priority order of the B and W chambers under the same deposition conditions is confirmed. When the B chamber takes precedence in S413 to S414, the first substance to be deposited is put into the B chamber and the second substance to be deposited is put into the W chamber to deposit the substance b. If the W chamber takes precedence according to S415 to S416, the first substance to be deposited is put into the W chamber and the second substance to be deposited is put into the B chamber to deposit the substance b.

The priority order of the C chamber and the X chamber under the same deposition condition is confirmed by S417, and the first substance to be deposited is charged into the chamber having a high priority order by S418 to S421 to deposit the substance C.

Such a configuration is similarly applied to the D chamber having the d material and the E chamber and the Z chamber having the Y chamber and the e material, as shown in S422 to S431, and a duplicate description will be omitted.

As a result, according to the present invention, since there are a plurality of chambers for forming a specific deposition layer, the deposition reaction can be performed simultaneously on a plurality of substrates during the same tact-time, thereby improving productivity.

The control method of the deposition apparatus according to FIG. 5 is to use a plurality of the preliminary chambers simultaneously with the reaction chamber according to the thickness of the deposition layer.

The material to be deposited is prepared by S501.

S502 and S503 determine which of the spare chambers is to be set to the same deposition condition as the reaction chamber. It is preferable to set the thickness of the specific deposition layer and set the preparatory chamber according to the thickness of the set deposition layer. In one embodiment, the thickness of the vapor deposition layer is two times larger than the conventional thickness, and the vapor deposition layer is deposited three times as thick as the conventional vapor deposition layer. In this case, the X chamber is set to the same deposition condition as the A chamber, and the Y and Z chambers are set to the same deposition conditions as the C chamber.

However, the examples of the types of deposition samples and the thicknesses of the deposition layers are not limited to those described above. In addition to the above embodiments, deposition layers of various thicknesses may be formed by exchanging the deposition sources of the preliminary chambers.

And it is confirmed whether or not the A chamber and the X chamber are prioritized by S504. The priority order is the same as in S407. If there is a difference, the order of input is determined as to which chamber the first chamber is to be charged first and the other chamber to be charged later. Since the input condition is the same as S407, It will be omitted.

If the A chamber takes precedence over the X chamber by steps S505 and S506, the substance to be deposited is first deposited in the chamber A, and the substance a is deposited in the chamber A, and the substance a is further deposited. When the X chamber takes precedence over the A chamber according to S507 and S508, the deposited body is first put into the X chamber and then into the A chamber.

The deposited body having the double layer a deposited by S509 is put into the chamber B and the material b is deposited.

S510 to S523, the deposited body is sequentially supplied to each of the chambers in the order of priority among the C, Y, and Z chambers to form a three-fold thick c-deposited layer.

Finally, the material to be deposited is put into the D chamber and the E chamber by S524 and S525 to deposit the d and e materials.

By using a plurality of chambers to form the same deposition layer, it is possible to control the thickness of the deposition layer with the same tact time, thereby reducing waste of materials and improving productivity.

Although the present invention has been described with reference to the preferred embodiments of the present invention, the types and numbers of the preliminary chamber and the reaction chamber described above, and the types and numbers of the evaporation sources are not limited thereto. And can be modified and changed.

Many embodiments other than the above-described embodiments are within the scope of the claims of the present invention.

1: Deposited material supply part 2, 3, 4: First to third clusters
5: Transfer chamber 5a:
6: reaction chamber 6a: spare chamber
7: stock chamber 8: movable buffer chamber
9: rotation buffer chamber 11: inlet
12: exit 13: substrate transfer means
14: substrate supporting part 15: mounting base
20: evaporation source 100: substrate

Claims (5)

delete A first chamber for depositing a first deposition material on an evaporated material; and a second chamber for depositing a second evaporated material different from the first evaporated material on the evaporated material;
Depositing the first deposition material in the first chamber and the second deposition material in the second chamber;
Setting the third chamber to the same condition as the first chamber if an abnormality of the first chamber is captured; And
Depositing the first deposition material in the third chamber instead of the first chamber and depositing the second deposition material in the second chamber,
Depositing a first deposition material on the object to be deposited in the third chamber and then depositing the object on which the first deposition material is deposited into the second chamber to continuously deposit the second deposition material in the second chamber, Wherein the deposition apparatus is a deposition apparatus. A first chamber set to deposit a first deposition material on an evaporated material;
A second chamber set to deposit a second deposition material different from the first deposition material on the deposition target;
A third chamber set at the same condition as the first chamber to deposit the first evaporation material on the evaporation material;
A transfer chamber connected to the first to third chambers and adapted to supply the object to be deposited to at least one of the first to third chambers; And
Determining a priority order of the first chamber and the third chamber, using a higher priority among the first chamber and the third chamber, and preliminarily using one of the first chamber and the third chamber, And a controller for controlling the operation of the control unit,
After depositing the first deposition material using the chamber having the higher priority among the first chamber and the third chamber, the deposition subject material on which the first deposition material is deposited is injected into the second chamber to continuously perform the deposition process / RTI > The method of claim 3,
Wherein the chamber first arriving at a deposition condition among the first chamber and the third chamber has a high priority. The method of claim 3,
Wherein the priority is preset by a user.

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