KR101499953B1 - Vertical structure group III nitride-based semiconductor light-emitting diode device and manufacturing method - Google Patents

Abstract

The present invention relates to a vertical structure group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same, and more particularly, to an n-type ohmic contact electrode structure; A multi-layer structure for a group III nitride-based semiconductor light-emitting diode device in which an n-type nitride-based clad layer, a nitride-based active layer, a p-type nitride-based clad layer, and a surface modification layer are sequentially stacked below the n-type ohmic contact electrode structure; A p-type electrode structure including a current blocking structure in the form of a trench formed on an upper portion of the multilayer structure for the light emitting diode device; And a heat sink support formed under the multi-layer structure for a light emitting diode device in which the p-type electrode structure is formed. The light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.

More specifically, a growth substrate wafer and a functional bonding wafer on which a multi-layer structure for the group III nitride-based semiconductor light-emitting diode device is grown on a growth substrate are bonded to each other by a wafer- to-wafer bonding and a lift-off process to provide a vertical structure group III nitride-based semiconductor light-emitting diode device and its manufacturing method.

 A group III nitride-based semiconductor light emitting diode, a multilayer structure for a light emitting diode device, a surface modification layer, a sacrificial separation layer, a wafer bonding layer, a functional bonding wafer, a current blocking structure, a trench, , Wafer-to-wafer bonding, substrate separation, thermal-chemical degradation

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical structure group III nitride-based semiconductor light-emitting diode device and a fabrication method thereof,

The present invention relates to a method of manufacturing a semiconductor device having a vertical structure using a single crystal group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Structure group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same. More specifically, a growth substrate wafer on which a multi-layer structure for a group III nitride-based semiconductor light-emitting diode device is grown on a growth substrate and a functional bonding wafer manufactured by the present invention are mounted on a wafer- Nitride-based semiconductor light-emitting diode device and its manufacturing method by combining a wafer-to-wafer bonding process and a lift-off process.

Recently, a light emitting diode (LED) device using a group III nitride-based semiconductor single crystal has been used as a nitride-based active layer. In x Al y Ga 1-xy N (0? X, 0? Y, x + ) The material band has a wide band gap. In particular, according to the composition of In, it is known as a material capable of emitting light in the entire region of visible light, and ultraviolet light can be generated in a microwave region depending on the composition of Al. The light emitting diode manufactured using the light emitting diode, Devices for backlighting, medical light sources including white light sources, and the like, have been widely applied. As the range of applications is gradually increasing and increasing, the development of high quality light emitting diodes is becoming very important.

FIG. 14 is a schematic structural cross-sectional view of a conventional structure-based group III nitride-based semiconductor light emitting diode device according to the related art, in which a buffer layer 20, an n-type nitride-based clad layer 30, , A nitride-based active layer 40 and a p-type nitride-based cladding layer 50 are successively grown, and the p-type nitride-based cladding layer 50 has an n-type nitride-based cladding layer Type ohmic contact electrode 60 and an electrode pad 70 are sequentially formed on the p-type nitride-based cladding layer 50. The part of the region An n-type ohmic contact electrode structure 80 is formed on the n-type nitride-based clad layer 30 which is etched and exposed to the air.

The group III nitride-based semiconductor light-emitting diode device shown in FIG. 14 is bonded to a mold cup with an adhesive on the back surface of the sapphire growth substrate, and one lead frame is connected to the n-type ohmic contact electrode structure 80 At the same time, another lead frame and the p-type electrode pad 70 are connected by wire connection. When the external voltage is applied through the n and p electrode pads, electrons and holes are injected from the n-type nitride-based clad layer 30 and the p-type nitride-based clad layer 50, respectively, A charge carrier flows into the nitride-based active layer 40, and two charge carriers are recombined to emit light. The light emitted from the nitride-based active layer 40 is emitted to the four sides of the nitride-based active layer 40. The upper light is emitted to the outside through the p-type nitride-based clad layer 50, A part of the proceeding light goes out to the outside of the light emitting diode device while advancing to the bottom part, and a part of the light goes down the sapphire growth substrate 10 and is absorbed or reflected by the solder used for assembling the light emitting diode device, Based active layer 40 including the nitride-based active layer 40, and then exits to the outside through the nitride-based active layer 40.

However, since the group III nitride-based semiconductor light-emitting diode device is fabricated in a sapphire growth substrate 10 having a low thermal conductivity and electrical insulation property as a horizontal structure, the group III nitride-based semiconductor light-emitting diode device smoothly emits a large amount of heat There is a problem that the overall characteristics of the device are deteriorated.

In addition, as shown in FIG. 14, in order to form two ohmic contact electrodes and electrode pads, it is necessary to remove a part of the nitride based active layer 40, thereby reducing the light emitting area and thus it is difficult to realize a high-quality light emitting diode device , The number of chips in a wafer of the same size is reduced, and the price competitiveness lags behind.

In addition, after the manufacturing process of the light emitting diode device is completed on the wafer, the lapping, polishing, scribing, sawing, and braking breaking of the sapphire growth substrate 10 and the cleavage plane of the group III nitride-based semiconductor during a mechanical process such as etching or breaking of the sapphire substrate 10.

In order to solve the problem of the group III nitride-based semiconductor light-emitting diode device having a horizontal structure as described above, the growth substrate 10 is removed so that two ohmic contact electrodes and electrode pads are opposed to the upper and lower portions of the light- A vertically structured group III nitride-based semiconductor light-emitting diode device in which an externally applied current flows in one direction to improve light-emitting efficiency is disclosed in a number of documents (US Pat. No. 6,071,795, US Pat. No. 6,335,263, US 20060189098) have.

FIG. 15 is a cross-sectional view showing a typical manufacturing process of a vertical structure group III nitride-based semiconductor light emitting diode device as an example of the prior art. As shown in FIG. 15, in a typical vertical structure light emitting diode device manufacturing method, a multi-layer structure for a light emitting diode device is formed on a sapphire growth substrate 10 using MOCVD or MBE growth equipment, a reflective p-type Ohmic contact electrode structure 90 is formed on the p-type nitride-based clad layer 50, and then a supporting substrate wafer prepared separately from the growth substrate wafer is solder bonded at a temperature of less than 300 ° C. Next, the sapphire growth substrate is removed to fabricate a vertical structure light emitting diode device.

15, an undoped GaN or InGaN buffer layer 20 and an n-type nitride-based clad layer 30 (not shown) are sequentially grown on an upper portion of a sapphire substrate 10 using an MOCVD growth equipment. A nitride-based active layer 40 formed of InGaN and GaN and a p-type nitride-based cladding layer 50 are successively grown on the p-type nitride-based cladding layer 50 (FIG. 15A) A reflective p-type ohmic contact electrode structure 90 and a soldering reaction preventive layer 100 are sequentially formed on the upper surface of the substrate 100 to prepare a growth substrate wafer (FIG. 15B). Thereafter, as shown in FIG. 15C, two ohmic contact electrodes 120 and 130 are formed on the upper and lower portions of the electrically conductive support substrate 110, and a soldering material (for example, 140 are deposited to prepare a supporting substrate wafer. Thereafter, the surface of the grown substrate wafer The soldering material diffusion preventing layer 100 and the soldering material 140 of the ground substrate wafer are soldered and joined as shown in FIG. 15D. Thereafter, the sapphire growth substrate 10 is irradiated with a laser having a strong energy to the rear surface of the sapphire growth substrate 10, which is the rear surface of the growth substrate wafer on which the plurality of light emitting diode devices are manufactured, from the plurality of light emitting diode devices The undoped GaN or InGaN buffer layer 20 which has been damaged by laser damage ( laser lift off ) ( LLO ) is transferred to the front side until the n-type nitride clad layer 30 is exposed using a dry etching process (FIG. 15E), and an n-type ohmic contact electrode structure 80 is formed on the n-type nitride-based clad layer 30 corresponding to the plurality of light emitting diode devices (FIG. 15F). Finally, the plurality of light emitting diode elements and the electrically conductive support substrate 110 are mechanically (e.g., mechanically, mechanically, electrically, etc.) lapping, polishing, scribing, sawing, A cutting process is performed to separate the light emitting diode into a single light emitting diode device (Fig. 15G).

However, the above-described vertical process light emitting diode device manufacturing process has various problems as described below, and it is difficult to safely secure a single vertically structured light emitting diode device in a large quantity. That is, since the soldering bonding is performed in a low temperature range, a high temperature process higher than the soldering bonding temperature can not be performed in the subsequent steps, and it is difficult to realize a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are coupled between different dissimilar wafers, thermal stress is generated at the time of bonding, which seriously affects the reliability of the light emitting diode device.

More recently, in order to solve the problems occurring in the vertical structure group III nitride-based semiconductor light-emitting diode device manufactured by the soldering bonding, a metal thick film such as Cu, Ni or the like instead of the electrically conductive support substrate formed by soldering bonding Is formed on the reflective p-type ohmic contact electrode structure 90 by an electroplating process and is partially used for product production. However, the following processes occurring in the vertical-type light emitting diode fabrication process combined with the electroplating process, that is, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, Problems such as poor performance of the device and occurrence of defects still remain as a problem to be solved.

Disclosure of the Invention The present invention has been made in recognition of the above-mentioned problems. It is an object of the present invention to provide a method of manufacturing a semiconductor device, A growth substrate wafer having a p-type electrode structure including a multilayer structure for a III-nitride-based semiconductor light-emitting diode element and an effective current blocking structure, and a functional bonded wafer including a support substrate devised by the present invention functional bonding wafer to a vertical structure light emitting diode device and a manufacturing method thereof.

More specifically, a growth substrate wafer and a functional bonding wafer, on which a multi-layer structure for a group III nitride-based semiconductor light-emitting diode device is grown on a growth substrate, are wafer-to-wafer bonded, -off process to sequentially remove the growth substrate and the support substrate to provide a vertical structure group III nitride-based semiconductor light emitting diode device and a manufacturing method thereof.

In order to achieve the above object,

n-type ohmic contact electrode structure; A multi-layer structure for a group III nitride-based semiconductor light-emitting diode device in which an n-type nitride-based clad layer, a nitride-based active layer, a p-type nitride-based clad layer, and a surface modification layer are sequentially stacked below the n-type ohmic contact electrode structure; A p-type electrode structure composed of a current blocking structure in the form of a trench and an electrode thin film layer on the top of the multilayer structure for the light emitting diode device; And a heat sink support formed on the bottom of the p-type electrode structure. The vertical Group III nitride-based semiconductor light emitting diode device includes:

In the vertical structure group III nitride-based semiconductor light-emitting diode device of the present invention, the surface modification located above the multi-layer structure for the group III nitride-based semiconductor light-emitting diode device includes a spuerlattice structure, n Type conductivity group of InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductivity InGaN, AlInN, InN, AlGaN or a group III nitride system having a nitrogen-polar surface. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

In the vertical structure group III nitride-based semiconductor light-emitting diode device of the present invention, the current blocking structure, which is a part of the p-type electrode structure, is etched vertically at least deeper than the thickness of the surface modification layer, Some areas of the layer have a trench shape exposed to the air.

In the vertical structure group III nitride-based semiconductor light emitting diode device of the present invention, the electrode thin film layer, which is a part of the p-type electrode structure, is formed by partially partially depositing an electrically conductive material film on the surface modification layer and the p- Or through a complete deposition.

The electrically conductive electrode thin film layer in contact with the p-type nitride-based clad layer of the multilayer structure for the light-emitting diode element forms a schottky contacting interface, The electrically conductive thin film layer that is in contact forms an ohmic contacting interface.

The p-type electrode structure including the current blocking structure prevents vertical current injection in the vertical direction when driving the vertically structured light emitting diode device and suppresses horizontal current spreading in the horizontal direction Thereby improving the overall performance of the LED.

In the vertical structure group III nitride-based semiconductor light-emitting diode device of the present invention, the p-type electrode structure not only serves to prevent current concentration phenomenon in the vertical direction, but also provides high reflection to light, prevention of diffusion of materials, Or a multi-layered electrode thin film layer capable of performing oxidation prevention of the material.

In order to accomplish the above object, the present invention provides a method of manufacturing a vertical structure light emitting diode device using a multi-layer structure for a group III nitride-based semiconductor light emitting diode device,

A growth substrate wafer in which a multi-layer structure for a group III nitride-based light-emitting diode element is sequentially grown on an upper portion of a growth substrate and including an n-type nitride-based clad layer, a nitride-based active layer, a p- Forming a trench-type current blocking structure on the surface modification layer using an etching process; forming a p-type electrode structure by grafting with the current blocking structure; Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on a support substrate; Forming a composite wafer-bonded in a wafer-to-wafer manner; Separating the growth substrate of the long-term plate wafer; forming surface irregularities and an n-type ohmic contact electrode structure on the n-type nitride-based clad layer in the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer.

The current blocking structure of the p-type electrode structure formed on the surface modification layer maximizes the horizontal current spreading in the horizontal direction when the device is driven. The n-type nitride- Type ohmic contact electrode structure, and are arranged so as to face each other at the same position in the vertical direction.

The sacrificial separation layer of the functional bonded wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The heat sink support of the functional bonded wafer is formed of an electrically conductive material film having a thickness of at least 10 microns or more, using electro-plating, physical vapor deposition (PVD), chemical vapor deposition (CVD) .

The wafer bonding layer present on the growth substrate and the support substrate is formed of an electrically conductive material having a strong bonding force under a certain pressure and temperature. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.

In addition to the electrical and optical properties of the group III nitride-based semiconductor light-emitting diode device, the steps such as annealing and surface treatment are introduced before and after each step as means for enhancing the mechanical adhesion between layers .

As described above, since the group III nitride-based semiconductor light emitting diode manufactured by the present invention has the p-type electrode structure having the current blocking structure, the current in one direction vertical direction Thereby preventing the vertical current injection and promoting the horizontal current spreading in the horizontal direction, thereby improving the overall performance of the LED.

In addition, according to the method for manufacturing a vertical structure group III nitride-based semiconductor light emitting diode according to the present invention, a wafer bending phenomenon at the time of wafer-to-wafer bonding and a manufacturing process for a single layered light- It is possible to improve the processability and yield of a fab process.

Hereinafter, the manufacture of a group III nitride-based semiconductor optoelectronic device, which is a light emitting diode and a device manufactured according to the present invention, will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing the structure of a group III nitride-based semiconductor light-emitting diode device according to an embodiment of the present invention.

1, an n-type nitride-based clad layer 301, a nitride-based active layer 401, a p-type nitride-based clad layer 501, and a surface modification layer (not shown) are formed on the bottom surface of the n- 601, a p-type electrode structure 701 composed of a current blocking structure 11 and an electrode thin film layer 12, wafer bonding layers 901 and 402, a heat sink support 302 and a die bonding layer 403 A light emitting diode 1 which is a vertically structured light emitting element is formed.

More specifically, unevenness 203 is formed on the surface of the n-type nitride-based clad layer 301, which is a light-emitting surface, advantageously effectively emitting light generated in the nitride-based active layer 401 to the outside, An n-type ohmic contact electrode structure 303 is formed on the n-type nitride-based clad layer 301.

Although not shown, a passivation film is formed on the side surface of the vertical structure light emitting diode 1 to protect the nitride based active layer 401 exposed through the side surface. At this time, the passivation film is formed of an electrically insulating oxide, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A surface modification layer 601 is formed on a lower surface of the p-type nitride-based cladding layer 501 of the light emitting diode 1 having the passivation film formed thereon. A current blocking structure 11 A p-type electrode structure 701 composed of an electrode thin film layer 12 is formed.

After the n-type nitride-based clad layer 301, the nitride-based active layer 401 and the p-type nitride-based clad layer 501 are grown, the surface modification layer 601 is grown continuously in the MOCVD and MBE chambers And the surface modification layer 601 may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, And a group III nitride system having a nitrogen-polar surface formed thereon.

In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

The p-type electrode structure 701 is composed of a current blocking structure 11 and an electrode thin film layer 12. The current blocking structure 11 is etched deeper than the thickness of the surface modification layer 601, Type cladding layer 501 is formed on the p-type nitride-based cladding layer 501 which is exposed to the air and has a trench shape in which a part of the p-type nitride- The electrode thin film layer 12, which is electrically conductive, is formed by vapor deposition.

1, the electrode thin film layer 12 constituting the p-type electrode structure 701 contacts the p-type nitride-based cladding layer 501 and the surface modification layer 601 at the same time. At this time, the electrode thin film layers 12a, 12b, and 12e in contact with the p-type nitride-based clad layer 501 form a schottky contacting interface, while electrons in contact with the surface modification layer 601 The conductive material films 12c and 12d are forming an ohmic contacting interface.

Meanwhile, a part of the area 11 of the current blocking structure 701 is formed of air or an electrically insulating material.

The p-type electrode structure 701 is a multi-layered structure of a metal, an alloy, or a solid solution capable of performing high reflection to light, preventing diffusion of substances, improving adhesion of materials, Respectively.

The wafer bonding layers 901 and 402 positioned between the p-type electrode structure 701 and the heat sink supporter 302 are formed of an electrically conductive material and the p-type electrode structure 701 and the p- And the heat sink support 302 is structurally connected.

In particular, the vertical-structured light-emitting diode 1 according to the embodiment of the present invention includes the p-type nitride-based clad layer 501, the interface reforming layer 601 formed on the p- and includes a p-type electrode structure 701, thereby improving current spreading in the horizontal direction and increasing external light emitting efficiency.

2 is a cross-sectional view illustrating the structure of a group III nitride-based semiconductor light-emitting diode device according to an embodiment of the present invention.

2, an n-type nitride-based clad layer 301, a nitride-based active layer 401, a p-type nitride-based clad layer 501, and a surface modification layer (not shown) are formed on the bottom surface of the n-type ohmic contact electrode structure 303 601, a p-type electrode structure 801 composed of a current blocking structure 11 and an electrode thin film layer 12, wafer bonding layers 901 and 402, a heat sink support 302 and a die bonding layer 403 A light emitting diode 2 as a vertically structured light emitting element is formed.

More specifically, unevenness 203 is formed on the surface of the n-type nitride-based clad layer 301, which is a light-emitting surface, advantageously effectively emitting light generated in the nitride-based active layer 401 to the outside, An n-type ohmic contact electrode structure 303 is formed on the n-type nitride-based clad layer 301.

Although not shown, a passivation film is formed on the side surface of the vertical structure light emitting diode 2 to protect the nitride based active layer 401 exposed through the side surface. At this time, the passivation film is formed of an electrically insulating oxide, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A surface modification layer 601 is formed on a lower surface of the p-type nitride-based cladding layer 501 of the light emitting diode 2 having the passivation film formed thereon, and a current blocking structure 11 A p-type electrode structure 701 composed of an electrode thin film layer 12 is formed.

After the n-type nitride-based clad layer 301, the nitride-based active layer 401 and the p-type nitride-based clad layer 501 are grown, the surface modification layer 601 is grown continuously in the MOCVD and MBE chambers And the surface modification layer 601 may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, And a group III nitride system having a nitrogen-polar surface formed thereon.

In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

The p-type electrode structure 801 is composed of a current blocking structure 11 and an electrode thin film layer 12. The current blocking structure 11 is etched deeper than the thickness of the surface modification layer 601, Type cladding layer 501 is formed on the p-type nitride-based cladding layer 501 which is exposed to the air and has a trench shape in which a part of the p-type nitride- The electrode thin film layer 12, which is electrically conductive, is formed by vapor deposition.

2, the electrode thin film layer 12 constituting the p-type electrode structure 801 contacts the p-type nitride-based cladding layer 501 and the surface modification layer 601 at the same time. At this time, the electrode thin film layers 12a, 12b, and 12e in contact with the p-type nitride-based clad layer 501 form a schottky contacting interface, while electrons in contact with the surface modification layer 601 The conductive material films 12c and 12d are forming an ohmic contacting interface.

Meanwhile, a part of the region 12 of the current blocking structure 801 is formed of an electrically conductive material.

The p-type electrode structure 801 may be a multi-layered structure of a metal, an alloy, or a solid solution capable of performing high reflection to light, preventing diffusion of materials, improving adhesion of materials, Respectively.

The wafer bonding layers 901 and 402 positioned between the p-type electrode structure 801 and the heat sink supporter 302 are formed of an electrically conductive material, and the p-type electrode structure 801 and the p- And the heat sink support 302 is structurally connected.

In particular, the vertical-structured light-emitting diode 2 according to the embodiment of the present invention includes the p-type nitride-based cladding layer 501, the interface reforming layer 601 formed on the p- and includes the p-type electrode structure 801, thereby improving the current spreading in the horizontal direction and increasing the external light emitting efficiency.

3 to 13 are cross-sectional views illustrating a method of fabricating a vertical structure group III nitride-based semiconductor light emitting diode according to an embodiment of the present invention.

3 is a cross-sectional view of a growth substrate wafer on which a group III nitride-based semiconductor light-emitting diode multi-layer structure is grown on a growth substrate.

3, an n-type nitride-based cladding layer 301, a nitride-based active layer 401, and a p-type conductivity-based cladding layer 301, which are basically made of an n-type conductive single crystal semiconductor material, are formed on the growth substrate 101, A p-type nitride-based cladding layer 501 made of a single-crystal semiconductor material, and an interface reforming layer 601. More specifically, the n-type nitride-based clad layer 301 may be composed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 401 may have a multi-quantum well structure And an undoped InGaN layer. The upper nitride-based cladding layer 501 may be composed of a p-type conductive GaN layer and an AlGaN layer. The n-type nitride-based cladding layer 301 and the n-type nitride-based cladding layer 301 are grown before the basic multilayer structure for the light-emitting diode element composed of the Group III nitride-based semiconductor layer described above is grown by using a well-known process such as MOCVD or MBE single crystal growth Another buffer layer such as InGaN, AlN, SiC, SiCN, or GaN is formed on the uppermost growth surface of the growth substrate 101 in order to improve lattice matching with the growth surface of the growth substrate 101 201 are preferably formed.

The interface reforming layer 601 located on the p-type nitride-based cladding layer 501 is continuously formed in a growth equipment chamber using MOCVD and MBE, which are single-crystal group III nitride-based semiconductor growth equipment, A well-known superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, ) Group III nitride system having a Group III nitride system. In particular, it is preferable that the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

FIG. 4 is a cross-sectional view after etching, which is the first process for forming a current blocking structure, which is a part of a p-type electrode structure, on an upper layer of a growth substrate wafer.

Referring to FIG. 4, the p-type nitride-based cladding layer 501 is exposed to the air by etching deeper than the thickness h of the interface reforming layer 601 in the vertical direction.

FIG. 5 is a cross-sectional view showing deposition of an electrically conductive material film, which is a second process for forming an electrode thin film layer which is a part of a p-type electrode structure of a growth substrate wafer.

5, the electrode thin film layer 12, which is electrically conductive, is deposited on the p-type nitride-based clad layer 501 exposed on the atmosphere and the interface reforming layer 601 to complete the p-type electrode structure 701 do. In particular, the p-type electrode structure 701 can be divided into six regions. The electrode thin film layers 12a, 12b and 12e contacting the p-type nitride-based cladding layer 501 exposed to the atmosphere are schottky contacting and the electrode thin film layers 12c and 12d contacting the upper surface of the interface reforming layer 601 form an ohmic contacting interface.

In addition, a part of the region 11 of the p-type electrode structure 701 may be made of an oxide which is air or electrically insulating.

6 to 7 are cross-sectional views of a wafer bonding layer formed on a p-type electrode structure.

Referring to FIG. 6, a wafer bonding layer 901, which is electrically conductive, is deposited on a portion of the upper portion of the p-type electrode structure 701. At this time, the wafer bonding layer 901 may be a multi-layered structure of a metal, an alloy, or a solid solution capable of performing high reflection on light, prevention of diffusion of materials, improvement of adhesion of materials, . In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

Referring to FIG. 7, a wafer bonding layer 901, which is electrically conductive, is deposited over the entire region of the p-type electrode structure 701. At this time, the wafer bonding layer 901 may be a multi-layered structure of a metal, an alloy, or a solid solution capable of performing high reflection on light, prevention of diffusion of materials, improvement of adhesion of materials, . In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

8 is a cross-sectional view of a multi-functional bonding wafer including a supporting substrate proposed by the present invention.

Referring to FIG. 8, a sacrificial separation layer 202, a heat sink support 302, and a wafer bonding layer 402 are sequentially formed on a support substrate 102.

It is preferable that the support substrate 102 is selected so as to suppress the wafer bending phenomenon and the crystal defects introduced into the multilayer structure for the light-emitting diode device during the wafer-to-wafer bonding, Further, if the thermal expansion coefficient of the growth substrate 101 is the same or similar to that of the growth substrate 101, it is not limited to use.

The sacrificial separation layer 202 is not limited to the use of any material that generates chemical decomposition (CMP), a chemical wet etching solution, or a decomposition reaction using a photon beam having a specific wavelength band. Examples of the material include ZnO, GaN, InGaN , InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, Au, Ag, Pd, SiO2 and SiNx.

The heat sink support 302 is a single layer or multilayer structure composed of a metal, an alloy or a solid solution and furthermore the heat sink support 302 has a deposition rate of Rapid electroplating, physical vapor deposition (PVD), and chemical vapor deposition (CVD) methods.

The wafer bonding layer 402 is formed as a multi-layer of metal, alloy, or solid solution capable of performing high reflection on light, preventing diffusion of materials, improving adhesion of materials, or preventing oxidation of materials . In this case, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt and Cr.

9 is a cross-sectional view illustrating a process of wafer-to-wafer bonding a multi-functional wafer including a growth substrate wafer on which a multilayer structure for a group III nitride-based semiconductor light emitting diode device is formed and a support substrate, ≪ / RTI >

9, the complex 3 is formed by a direct wafer bonding process between the wafer bonding layer 901 of the growth substrate wafer and the wafer bonding layer 402 of the functional bonding wafer.

The wafer bonding is preferably performed by applying an external hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas .

Further, a surface treatment and a heat treatment process may be introduced to improve the mechanical bonding force between the two materials 901 and 402 and the formation of the ohmic contact interface before and after the wafer bonding.

10 is a cross-sectional view illustrating a process of lifting off a growth substrate in a wafer bonded composite.

The process of separating the growth substrate 101, which is a part of the growth substrate wafer in the combined composite 3, may be performed by chemical-mechanical polishing depending on the optical and chemical properties of the growth substrate 101, chemical wet etching using an etching solution, At least one of the thermal-chemical decomposition processes using a photon beam is used.

10, the growth substrate 101 may be separated from the substrate 101 using a laser photon beam used only when the growth substrate 101 is optically transparent, such as sapphire and AlN substrates. Separation process. More specifically, although the light of the laser beam having a strong energy passes through the rear surface of the transparent growth substrate 101 without absorption, the band gap wavelength of the buffer layer 201, which is a multilayer structure for the light-emitting diode device, The laser beam is absorbed by the laser beam, and at the same time, the temperature of 700 ° C or higher is generated, and the thermochemical decomposition reaction of the buffer layer 201 occurs to separate the growth substrate 101.

11 is a cross-sectional view of a composite in which surface irregularities are introduced on the n-type nitride-based clad layer after the growth substrate of the growth substrate wafer is separated.

Referring to FIG. 11, a process step is performed after the growth substrate 101 is stably removed using a substrate separation process such as chemical-mechanical polishing, chemical wet etching, thermal-chemical decomposition or the like. As a chemical wet etching or dry etching Type nitride-based clad layer 301 is exposed by using a wet or dry etching method and the surface of the n-type nitride-based clad layer 301 exposed to the atmosphere is subjected to surface roughness or patterning ) Step 203 is performed.

12 is a cross-sectional view of a composite in which an n-type ohmic contact electrode structure is formed on a surface irregularity or patterned n-type nitride-based clad layer.

Referring to FIG. 12, an n-type ohmic contact electrode structure 303 is formed on the n-type nitride-based clad layer 301 having the surface irregularities or patterned portions 203. The n-type ohmic contact electrode structure 303 has the same dimensions and shape as the trench-like current blocking structure 11 which is a part of the p-type electrode structures 701 to 801 formed on the p-type nitride- At the same time, they are opposed to each other at the same position in the vertical direction from the viewpoint of the sectional view of the light emitting diode.

A surface treatment or a heat treatment may be performed before or after the n-type ohmic contact electrode structure 303 is laminated on the n-type nitride-based clad layer 301 in order to improve the performance of the light emitting diode device .

13 is a cross-sectional view of a vertically structured light emitting diode structure shown after lifting off a support substrate in a bonded composite and forming a die bond layer at the bottom of the heat sink support.

The process of separating the supporting substrate 102, which is a part of the functional bonded wafer in the combined composite 3, may be carried out by chemical-mechanical polishing, chemical wet etching using an etching solution or the like depending on the optical and chemical properties of the growth substrate 102 At least one of the thermal-chemical decomposition processes using a photon beam is used.

Referring to FIG. 13, after the support substrate 102 is separated, a die bonding layer 403 is formed to finally complete the vertical structure light emitting diode device.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention as defined by the appended claims. something to do.

1 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a first embodiment of the present invention,

2 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a second embodiment of the present invention,

FIGS. 3 to 13 are cross-sectional views illustrating a method of fabricating a vertical structure group III nitride-based semiconductor light emitting diode device according to an embodiment of the present invention,

FIG. 14 is a schematic structural cross-sectional view of a group III nitride-based semiconductor light-emitting diode device of a horizontal structure according to the prior art,

15 is a cross-sectional view illustrating a manufacturing process of a vertical structure group III nitride-based semiconductor light emitting diode according to the prior art.

Claims (14)

n-type ohmic contact electrode structure; A multi-layer structure for a group III nitride-based semiconductor light-emitting diode device in which an n-type nitride-based clad layer, a nitride-based active layer, a p-type nitride-based clad layer, and a surface modification layer are sequentially stacked below the n-type ohmic contact electrode structure; A p-type electrode structure disposed under the multilayer structure for the light-emitting diode device; And a heat sink support disposed below the p-type electrode structure, The p-type electrode structure may include an electrode thin film layer disposed under the multilayer structure for the light emitting diode, and a current blocking structure disposed in a trench shape in the electrode thin film layer overlapping the n-type ohmic contact electrode structure. structure, Wherein the current blocking structure comprises an atmospheric or electrically insulating material, Wherein the electrode thin film layer further includes a protrusion including the current blocking structure, and the protrusion is formed in a vertical structure group group III group disposed in contact with the surface modification layer of the multilayer structure for the light emitting diode element and the p- Nitride based semiconductor light emitting diode device. n-type ohmic contact electrode structure; A multi-layer structure for a group III nitride-based semiconductor light-emitting diode device in which an n-type nitride-based clad layer, a nitride-based active layer, a p-type nitride-based clad layer, and a surface modification layer are sequentially stacked below the n-type ohmic contact electrode structure; A p-type electrode structure disposed under the multilayer structure for the light emitting diode device; And a heat sink support disposed below the p-type electrode structure, Wherein the p-type electrode structure includes an electrode thin film layer disposed under the multilayer structure for the light emitting diode element, and a current blocking structure disposed in a trench shape in the electrode thin film layer; The surface modification layer may be formed of a superlattice structure, n-type conductivity of InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductivity of InGaN, AlInN, InN, AlGaN or nitrogen polarity. Group III-nitride system having a surface; Wherein the surface modification layer has a hole in a region overlapping the n-type ohmic contact electrode structure, Wherein the current blocking structure is disposed in a hole of the surface modification layer. 3. The method of claim 2, Wherein the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components. delete The method according to claim 1, Wherein the electrode thin film layer as a part of the p-type electrode structure is an electroconductive material film deposited on at least a part of the surface modification layer and the p-type nitride-based cladding layer. 6. The method of claim 5, The refilled electroconductive electrode thin film layer in contact with the p-type nitride-based clad layer forms a schottky contacting interface, while the electrically conductive electrode thin film layer in contact with the surface modification layer has an ohmic contact interface ohmic contacting interface of a Group III nitride based semiconductor light emitting diode device. The method according to claim 1, The p-type electrode structure has a function of preventing a current concentration phenomenon in a vertical direction and a multi-layer structure capable of performing high reflection to light, preventing diffusion of materials, improving adhesion of materials, type nitride semiconductor light-emitting diode device having an electrode thin film layer of a Group III nitride-based semiconductor light-emitting device. The method according to claim 1, The heat sink support is formed by wafer bonding of a 10-micron meter or more electrically conductive material film formed by electro-plating, physical vapor deposition (PVD), or chemical vapor deposition (CVD) A vertical group III nitride semiconductor light emitting diode device formed under the structure. A growth substrate wafer in which a multi-layer structure for a group III nitride-based light-emitting diode element is sequentially grown on an upper portion of a growth substrate and including an n-type nitride-based clad layer, a nitride-based active layer, a p- Preparing, Forming a trench-type current blocking structure on the surface modification layer through an etching process; Forming a p-type electrode structure by grafting with the current blocking structure; Forming a wafer bonding layer on the p-type electrode structure, Preparing a functional bonded wafer in which a sacrificial separation layer, a heat sink support, and a wafer bonding layer are sequentially stacked on a support substrate; Forming a composite of the growth substrate wafer and the functional bonded wafer in a wafer-to-wafer manner by wafer bonding; Separating the growth substrate of the growth substrate wafer from the composite; Forming a surface irregularity and an n-type ohmic contact electrode structure on the n-type nitride-based clad layer in the composite from which the growth substrate has been removed; And separating the supporting substrate of the functional bonded wafer from the composite from which the growth substrate has been removed. 10. The method of claim 9, Type nitride semiconductor light emitting diode device according to claim 1, wherein the step of forming the trench-type current blocking structure exposes the p-type nitride-based cladding layer to the atmosphere by etching the surface of the p- ≪ / RTI > 10. The method of claim 9, A vertical structure group in which an optical reflector layer, a diffusion barrier layer, a mechanical adhesive layer, or an oxidation protection layer is added in the step of forming the p-type electrode structure, Method for manufacturing a Group III nitride-based semiconductor light-emitting diode device. 10. The method of claim 9, Type semiconductor substrate having the same dimension and shape as the current blocking structure in the step of forming the n-type ohmic contact electrode structure and vertically arranged in the same position as the current blocking structure in the vertical direction, A method of manufacturing a light emitting diode device. 10. The method of claim 9, Wherein at least one of chemical-mechanical polishing, chemical wet etching, or a heat-chemical decomposition process is carried out in the step of separating the growth substrate and the support substrate. 10. The method of claim 9, The sacrificial separation layer may include a vertical structure group III nitride-based semiconductor formed of any one selected from the group consisting of ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, Au, Ag, Pd, SiO2, A method of manufacturing a light emitting diode device.

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