KR101464752B1 - Organic electroluminescent display device - Google Patents

Abstract

The present invention provides a semiconductor device comprising: a substrate; A transistor located on a substrate; A lower electrode connected to a source or a drain of the transistor; A cathode positioned on the lower electrode; A metal electrode located on the cathode and having a thickness of 100 ANGSTROM; A bank layer located on the metal electrode and having an opening; An organic light emitting layer positioned within the opening of the bank layer; And an anode disposed on the organic light emitting layer, wherein the metal electrode comprises at least one of molybdenum (Mo) and tungsten (W).

Organic electroluminescence display, high melting point metal, thickness

Description

[0001] The present invention relates to an organic light emitting display,

The present invention relates to an organic light emitting display.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes located on a substrate.

In addition, the organic light emitting display device may include a top emission type, a bottom emission type, or a dual emission type depending on a direction in which light is emitted. It is divided into a passive matrix and an active matrix depending on the driving method.

In such an organic light emitting display, when a scan signal, a data signal, a power supply, and the like are supplied to a plurality of subpixels arranged in a matrix form, the selected subpixel emits light, thereby displaying an image.

Here, the sub-pixel includes a transistor located on a substrate and an organic light emitting diode located on the transistor. In the case of an organic light emitting diode, there is a normal type in which an anode, an organic light emitting layer and a cathode are formed on a transistor, and an inverted type in which a cathode, an organic light emitting layer and an anode are formed on a transistor.

On the other hand, in the conventional organic light emitting display device in which the organic light emitting diode is an inverted type, there is a problem that when the electrodes constituting the cathode are deposited, the interface of the electrodes is oxidized to lower the reliability and lifetime of the device.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the background art that when the organic light emitting diode included in a subpixel is formed in an inverted shape, the problem of oxidizing the interface of the cathode is solved, And an organic electroluminescent display device capable of improving lifetime.

According to the present invention, there is provided a semiconductor device comprising: a substrate; A transistor located on a substrate; A lower electrode connected to a source or a drain of the transistor; A cathode positioned on the lower electrode; A metal electrode located on the cathode and having a thickness of 100 ANGSTROM; A bank layer located on the metal electrode and having an opening; An organic light emitting layer positioned within the opening of the bank layer; And an anode disposed on the organic light emitting layer, wherein the metal electrode comprises at least one of molybdenum (Mo) and tungsten (W).

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The cathode may be an opaque metal.

The organic luminescent layer may include at least an electron injecting layer located on the metal electrode, an electron transporting layer located on the electron injecting layer, and a luminescent layer located on the electron transporting layer.

The cathode may be an electrode having a lower work function than the lower electrode.

A transistor includes a gate located on a substrate, a first insulating film located on the gate, an active layer located on the first insulating film, a source and a drain contacting the active layer, 2 insulating film.

The transistor includes an active layer located on a substrate, a first insulating film located on the active layer, a gate located on the first insulating film, a second insulating film located on the gate, and a second insulating film located on the second insulating film And may include a source and a drain in contact with the active layer.

The cathode and the metal electrode may be formed by successive vapor deposition in the same vacuum state.

When the thickness of the cathode is 1000 Å and the thickness of the metal electrode is 100 Å, the reflectance of the cathode and the metal electrode may be in the range of 50% to 70% when the wavelength of the visible light is in the range of 710 nm to 800 nm.

The present invention relates to an organic light emitting display device capable of improving the reliability and lifetime of a device by solving the problem that the interface of the cathode is oxidized when the organic light emitting diode included in the sub pixel is formed in an inverted form There is an effect to provide.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an organic light emitting display according to an embodiment of the present invention.

As shown in FIG. 1, the organic light emitting display may include a display unit 130 on which a plurality of subpixels P are disposed. The subpixel P may include a transistor located on the substrate 110 and an organic light emitting diode located on the transistor.

The plurality of subpixels P located on the substrate 110 are vulnerable to moisture or oxygen.

Accordingly, the substrate 110 and the sealing substrate 140 can be sealed by providing the sealing substrate 140 and forming the adhesive member 150 on the outer substrate 110 of the display unit 130. On the other hand, the plurality of subpixels P may be driven by the driving unit 160 positioned on the substrate 110 to represent an image.

The driving unit 160 may generate a scan signal, a data signal, and the like corresponding to various signals supplied from the outside, and may supply the generated signals to a plurality of subpixels P located on the display unit 130.

The driving unit 160 may include a scan driver for supplying a scan signal to a plurality of subpixels P and a data driver for supplying a data signal to the plurality of subpixels P. [ Here, the driving unit 160 schematically shows the scan driving unit and the data driving unit formed on one chip, and at least one of the scan driving unit and the data driving unit is divided into the outside of the substrate 110 or the substrate 110 Can be located.

Hereinafter, the cross-sectional structure of the subpixel P according to an embodiment of the present invention will be described in more detail.

FIG. 2 is a cross-sectional view of a subpixel according to an embodiment of the present invention, FIG. 3 is an enlarged view of an area A of FIG. 2, and FIG. 4 is a structural view of an organic light emitting diode.

Referring to FIG. 2, a substrate 110 may be positioned.

The substrate 110 can be selected to have excellent mechanical strength and dimensional stability as a material for forming devices. As a material of the substrate 110, a glass plate, a metal plate, a ceramic plate, or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, Resin, etc.) and the like.

A buffer layer 111 may be positioned on the substrate 110. The buffer layer 111 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as an alkali ion or the like flowing out from the substrate 110. The buffer layer 111 may be made of silicon oxide (SiO ₂ ), silicon nitride (SiN x), or the like.

A gate 112 may be located on the buffer layer 111. The gate 112 is formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper Or an alloy thereof. The gate 112 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, And may be a multilayer composed of any one selected or an alloy thereof. Also, the gate 112 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 may be located on the gate 112. The first insulating layer 113 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 114 may be located on the first insulating layer 113. The active layer 114 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer for lowering the contact resistance.

On the active layer 114, the source 115a and the drain 115b may be positioned. The source 115a and the drain 115b may be formed of a single layer or multiple layers and may be formed of a single layer of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). When the source 115a and the drain 115b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum, or molybdenum / aluminum-neodymium / molybdenum.

The second insulating film 116 may be located on the source 115a and the drain 115b. The second insulating film 116 may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto. The second insulating film 116 may be a passivation film.

The above is a description of the transistor located on the substrate 110. Hereinafter, an organic light emitting diode positioned on a transistor will be described.

A transparent lower electrode 117 may be positioned on the second insulating film 116. The lower electrode 117 may be made of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), but is not limited thereto.

A cathode 118 may be positioned on the lower electrode 117. The cathode 118 may be a reflector reflecting external light. The cathode 118 may be an electrode having a lower work function than the lower electrode 117. The cathode 118 may be an aluminum alloy such as aluminum neodymium (AlNd), but it may be an opaque electrode having a lower work function than the lower electrode 117.

A metal electrode 119 may be positioned on the cathode 118. The metal electrode 119 serves as a protective layer for preventing the aluminum-based cathode 118 from being oxidized. The metal electrode 119 is formed in consideration of the reflectance and the work function of the cathode 118.

Accordingly, it is advantageous that the metal electrode 119 is formed of a thin refractory metal (having a low oxidation rate) on the cathode 118, and is thinner than the cathode 118 and has a thickness in the range of 10 ANGSTROM to 100 ANGSTROM . Here, the material of the refractory metal may include molybdenum (Mo), chromium (Cr), titanium (Ti), and tungsten (W).

When the thickness d1 of the metal electrode 119 is set to 10 angstroms or more, the cathode 118 can be prevented from being oxidized. When the thickness d1 of the metal electrode 119 is set to 100 angstroms or less, The cathode 118 can be prevented from being oxidized and the reflectance can be prevented from being lowered.

In the above structure, the cathode 118 and the metal electrode 119 may be formed by continuous vapor deposition in the same vacuum state. Therefore, the cathode 118 and the metal electrode 119 are successively deposited in the same chamber without vacuum breakdown, and these are formed by photolithography, etching, and removal, respectively.

The bank layer 120 may be located on the metal electrode 119. The bank layer 120 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin. The bank layer 120 has openings on the metal electrode 119.

The organic light emitting layer 121 may be positioned in the opening of the bank layer 120 so as to be in contact with the metal electrode 119. The organic light emitting layer 121 may include at least an electron injection layer located on the metal electrode 119, an electron transporting layer located on the electron injection layer, and a light emitting layer located on the electron transporting layer.

A transparent anode 122 may be disposed on the organic light emitting layer 121. The anode 122 may be made of a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

Referring to FIG. 4, the organic light emitting diode including the organic light emitting layer 121 will be described in more detail as follows.

The electron injection layer 121a may be positioned on the metal electrode 119. The electron injection layer 121a may function to facilitate the injection of electrons and may include Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

The electron transport layer 121b may be located on the electron injection layer 121a. The electron transport layer 121b serves to smooth the transport of electrons and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, But are not limited thereto.

The light emitting layer 121c may be positioned on the electron transporting layer 121b. The light emitting layer 121c may include a material that emits red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 121c is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl)), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate wherein the dopant comprises at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 121c is green, it may be made of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 121c is blue, it may include a host material including CBP or mCP, and may include a phosphorescent material including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

The hole transport layer 121d may be positioned on the light emitting layer 121c. The hole transport layer 121d serves to smooth the transport of holes and may be formed by using NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'- , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) But is not limited thereto.

A hole injection layer 121e may be disposed on the hole transport layer 121d. The hole injecting layer 121e may serve to smoothly inject holes into the light emitting layer 121c and may be formed of cupper phthalocyanine (CuPc), poly (3,4) -ethylenedioxythiophene (PAN), polyaniline (PANI) N, N-dinaphthyl-N, N'-diphenyl benzidine), but the present invention is not limited thereto.

Here, the present invention is not limited to FIG. 4, and at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted.

In the above description, the transistor included in the sub-pixel P is the Batam gate. Hereinafter, the transistor included in the sub-pixel P is a top gate will be described as an example.

FIG. 5 is a cross-sectional view of a subpixel according to another embodiment of the present invention, FIG. 6 is an enlarged view of a region B in FIG. 5, and FIG. 7 is a structural view of an organic light emitting diode.

Referring to FIG. 5, the substrate 210 may be positioned.

The substrate 210 can be selected to have excellent mechanical strength and dimensional stability as a material for forming devices. As the material of the substrate 210, a glass plate, a metal plate, a ceramic plate, or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, Resin, etc.) and the like.

The buffer layer 211 may be located on the substrate 210. The buffer layer 211 may be formed to protect a thin film transistor formed in a subsequent process from an impurity such as alkali ions or the like, which flows out from the substrate 210. The buffer layer 211 may be made of silicon oxide (SiO ₂ ), silicon nitride (SiN x), or the like.

The active layer 214 may be located on the buffer layer 211. The active layer 214 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown here, the active layer 214 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 214 may include an ohmic contact layer for lowering the contact resistance.

The first insulating layer 213 may be located on the active layer 214. The first insulating layer 213 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

A gate 212 may be positioned on the first insulating film 213. The gate 212 may be formed of any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) Or an alloy thereof. The gate 212 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a multilayer composed of any one selected or an alloy thereof. In addition, the gate 212 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The second insulating film 216a may be located on the gate 212. [ The second insulating layer 216a may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto. The second insulating film 216a may be a passivation film.

A source 215a and a drain 215b may be positioned on the second insulating film 216a. The source 215a and the drain 215b may be formed of a single layer or multiple layers and may be formed of a single layer of molybdenum (Mo), aluminum (Al), chromium (Cr) And may be made of any one selected from the group consisting of gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) When the source 215a and the drain 215b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

A third insulating film 216b may be disposed on the source 215a and the drain 215b. The third insulating film 216b may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto. The third insulating film 216b may be a planarizing film.

The above is a description of the transistor located on the substrate 210. Hereinafter, an organic light emitting diode positioned on a transistor will be described.

A transparent lower electrode 217 may be positioned on the third insulating film 216b. The lower electrode 217 may be made of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) as a transparent material, but is not limited thereto.

A cathode 218 may be positioned on the lower electrode 217. The cathode 218 may be a reflector reflecting external light. The cathode 218 may be an electrode having a lower work function than the lower electrode 217. The cathode 218 may be an aluminum alloy such as aluminum neodymium (AlNd), but may be an opaque electrode having a lower work function than the lower electrode 217.

A metal electrode 219 may be positioned on the cathode 218. The metal electrode 219 serves as a protective layer for preventing the aluminum-based cathode 218 from being oxidized. The metal electrode 219 is formed in consideration of the reflectance and the work function of the cathode 218.

Accordingly, it is advantageous that the metal electrode 219 is formed of a thin refractory metal (having a low oxidation rate) on the cathode 218, and is thinner than the cathode 218 and has a thickness in the range of 10 ANGSTROM to 100 ANGSTROM . Here, the material of the refractory metal may include molybdenum (Mo), chromium (Cr), titanium (Ti), and tungsten (W).

When the thickness d2 of the metal electrode 219 is set to be equal to or less than 10 angstroms, the cathode 218 can be prevented from being oxidized. When the thickness d2 of the metal electrode 219 is made equal to or less than 100 angstroms, To prevent the cathode 218 from being oxidized and to prevent the reflectance from being lowered.

In the above structure, the cathode 218 and the metal electrode 219 may be formed by continuous vapor deposition in the same vacuum state. Therefore, the cathode 218 and the metal electrode 219 are successively deposited in the same chamber without vacuum breakdown, and these are formed by photolithography, etching, and removal, respectively.

The bank layer 220 may be located on the metal electrode 219. The bank layer 220 may include an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin. The bank layer 220 has openings on the metal electrodes 219.

The organic light emitting layer 221 may be located in the opening of the bank layer 220 to be in contact with the metal electrode 219. The organic light emitting layer 221 may include at least an electron injection layer located on the metal electrode 219, an electron transporting layer located on the electron injection layer, and a light emitting layer located on the electron transporting layer.

A transparent anode 222 may be disposed on the organic light emitting layer 221. The anode 222 may be made of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) as a transparent material, but the present invention is not limited thereto.

Referring to FIG. 7, the organic light emitting diode including the organic light emitting layer 221 will be described in more detail as follows.

The electron injection layer 221a may be located on the metal electrode 219. The electron injection layer 221a serves to smooth the injection of electrons and may use Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq.

An electron transporting layer 221b may be positioned on the electron injection layer 221a. The electron transporting layer 221b serves to smooth the transport of electrons and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, But are not limited thereto.

The light emitting layer 221c may be positioned on the electron transporting layer 221b. The light emitting layer 221c may include materials that emit red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light-emitting layer 221c is red, it includes a host material including carbazole biphenyl (CBP) or mCP (1,3-bis (carbazol-9-yl)), and bis (1-phenylisoquinoline) acetylacetonate wherein the dopant comprises at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 221c is green, it may be made of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 221c is blue, it may include a host material including CBP or mCP, and may include a phosphorescent material including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

A hole transport layer 221d may be positioned on the light emitting layer 221c. The hole transport layer 221d serves to smooth the transport of holes and includes a hole transport layer such as NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) -triphenylamine) But the present invention is not limited thereto.

A hole injection layer 221e may be disposed on the hole transport layer 221d. The hole injection layer 221e may function to smoothly inject holes into the light emitting layer 221c and may be formed of a material selected from the group consisting of CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) N, N-dinaphthyl-N, N'-diphenyl benzidine), but the present invention is not limited thereto.

Here, the present invention is not limited to FIG. 7, and at least one of the electron injection layer 221a, the electron transport layer 221b, the hole transport layer 221d, and the hole injection layer 221e may be omitted.

8 is a graph of reflectance according to an embodiment of the present invention.

8, when the thickness of the cathode is 1000 Å and the thickness of the metal electrode is 100 Å, the reflectivity of the cathode and the metal electrode is in the range of 50% to 70% when the wavelength of the visible light is in the range of 710 nm to 800 nm Lt; / RTI >

8, when the thickness of the cathode is 1000 Å and the thickness of the metal electrode is 100 Å, the reflectance of the cathode and the metal electrode in the visible light wavelength range of 710 nm to 800 nm is in the range of 30% to 48% Lt; / RTI >

Therefore, when the organic light emitting diode is inverted as in the present invention, if the thickness of the metal electrode is formed in consideration of the reflectance of the cathode, the cathode is oxidized, and the reflectance at a specific visible light wavelength range The problem of degradation can also be solved.

As described above, according to the embodiment of the present invention, when the organic light emitting diode included in a sub-pixel is formed in an inverted form, the problem of oxidation of the cathode interface due to oxygen or moisture is solved, There is an effect of providing an electroluminescent display device. Further, the present invention solves the problem that the cathode is oxidized by forming a metal electrode on the cathode, and also has the effect of solving the problem that the reflectance of the cathode is lowered in a specific visible light wavelength range.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1 is a schematic plan view of an organic light emitting display according to an embodiment of the present invention.

2 is a cross-sectional view of a subpixel in accordance with one embodiment of the present invention.

3 is an enlarged view of the area A in Fig.

4 is a structural view of an organic light emitting diode.

5 is a cross-sectional view of a subpixel according to another embodiment of the present invention;

Fig. 6 is an enlarged view of a region B in Fig. 5; Fig.

7 is a structural view of an organic light emitting diode.

8 is a graph of reflectance according to an embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

110, 210: substrate 112, 212: gate

113, 213: first insulating film 114, 214: active layer

117, 217: lower electrode 118, 218: cathode

119, 219: metal electrode 120, 220: bank layer

121, 221: organic light emitting layer 122, 222: anode

Claims (10)

Board; A transistor located on the substrate; A lower electrode connected to a source or a drain of the transistor; A cathode positioned on the lower electrode; A metal electrode located on the cathode and having a thickness of 100 ANGSTROM; A bank layer located on the metal electrode and having an opening; An organic light emitting layer disposed in an opening of the bank layer; And And an anode disposed on the organic light emitting layer, Wherein the metal electrode comprises at least one of molybdenum (Mo) and tungsten (W). delete delete The method according to claim 1, The cathode may further comprise: Wherein the transparent electrode is an opaque metal. The method according to claim 1, The organic light- An electron injection layer disposed on the metal electrode, an electron transport layer positioned on the electron injection layer, and a light emitting layer disposed on the electron transport layer. The method according to claim 1, The cathode may further comprise: Wherein the lower electrode is an electrode having a lower work function than the lower electrode. The method according to claim 1, The transistor comprising: A first insulating film disposed on the gate; an active layer disposed on the first insulating film; a source and a drain contacting the active layer; and a source and drain disposed on the source and drain, And a second insulating film formed on the first insulating film. The method according to claim 1, The transistor comprising: An active layer located on the substrate; a first insulating layer located on the active layer; a gate located on the first insulating layer; a second insulating layer located on the gate; And a source and a drain which are in contact with the active layer. The method according to claim 1, The cathode and the metal electrode are electrically connected to each other, And the second electrode is formed by successive vapor deposition in the same vacuum state. The method according to claim 1, When the thickness of the cathode is 1000 ANGSTROM and the thickness of the metal electrode is 100 ANGSTROM, When the wavelength of the visible light is in the range of 710 nm to 800 nm And the reflectance of the cathode and the metal electrode ranges from 50% to 70%.

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