KR101381947B1 - Led module with thermoelectric semiconductor - Google Patents

Abstract

The present invention, the first substrate having one side and the other side; A second substrate facing the other surface of the first substrate; A plurality of thermoelectric semiconductors disposed between the first substrate and the second substrate; And it discloses a thermoelectric semiconductor integrated LED module comprising a light emitting device mounted on one surface of the first substrate.

Description

Thermoelectric semiconductor integrated LED module {LED module with thermoelectric semiconductor}

The present invention relates to an LED module in which the LED is mounted directly on the thermoelectric module.

A light emitting diode (LED) is a device that forms a minority carrier (electron or hole) injected by using a pn junction structure of a semiconductor and emits light having a predetermined wavelength by recombination thereof. Various types are known, such as a red light emitting device, a green light emitting device using GaP, etc., and a blue light emitting device using InGaN / AlGaN double hetero structure.

LEDs have been widely used for display or lighting because of their high light conversion efficiency and relatively low power consumption, fast response speed, simple lighting circuit, and excellent safety.

However, LEDs have a problem in that a large amount of heat is emitted and deteriorated easily, and a light output efficiency is deteriorated by high temperature. Therefore, the technology for cooling the LED is a technology that has been recently issued and is an essential problem for the commercialization of the LED.

Recently, research on LED cooling technology using Peltier effect of thermoelectric module has been actively conducted. As an example, Korean Laid-Open Patent Publication No. 2009-0029341 discloses a technology in which a printed circuit board on which an LED chip is mounted is fixed to a thermoelectric module and cooled.

However, as shown in FIG. 1, the structure in which the printed circuit board 2 on which the LED 1 is mounted is attached to the upper substrate 3 of the thermoelectric module 6 by adhesive or soldering may be applied by adhesive or soldering. There is a problem that the heat resistance increases. Thus, the efficiency with which heat is released to the lower substrate 4 by the thermoelectric semiconductor 5 is reduced. In addition, since the thermal resistance of the printed circuit board 2 itself also occurs, there is a problem that the heat dissipation characteristics are further deteriorated.

The present invention provides a thermoelectric semiconductor integrated LED module in which the LED is mounted directly on the thermoelectric module to maximize the heat dissipation performance.

The present invention forms an electrode pattern directly on the thermoelectric module and provides a thermoelectric semiconductor integrated LED module having excellent reliability since the electrode pattern is not peeled off during soldering.

Thermoelectric semiconductor integrated LED module according to an aspect of the present invention, the first substrate having one surface and the other surface; A second substrate facing the other surface of the first substrate; A plurality of thermoelectric semiconductors disposed between the first substrate and the second substrate; And a light emitting device mounted on one surface of the first substrate.

In the thermoelectric semiconductor integrated LED module according to an aspect of the present invention, the first substrate and the second substrate is an alumina (Al ₂ O ₃ ) substrate, the thermoelectric semiconductor absorbs heat generated from the first substrate to Release to 2 boards.

In the thermoelectric semiconductor integrated LED module according to an aspect of the present invention, a first electrode pattern on which the light emitting device is mounted is formed on one surface of the first substrate, and the first electrode pattern includes silver (Ag) and lead (Pd). It includes.

In the thermoelectric semiconductor integrated LED module according to an aspect of the present invention, the first electrode pattern may be an alloy in which silver (Ag) and lead (Pd) are mixed at 5: 5 to 7: 3.

In the thermoelectric semiconductor integrated LED module according to an aspect of the present invention, it comprises a first solder to bond the light emitting element and the first electrode pattern, the first solder comprises tin (Sn).

In the thermoelectric semiconductor integrated LED module according to another aspect of the present invention, an LED is bonded to an electrode pattern formed on one surface of the thermoelectric module by solder, and the electrode pattern is an alloy in which silver (Ag) and lead (Pd) are mixed. And the solder comprises tin (Sn).

In a thermoelectric semiconductor integrated LED module according to another aspect of the present invention, one surface of the thermoelectric module is made of alumina, and the electrode pattern is mixed with silver (Ag) and lead (Pd) in a ratio of 5: 5 to 7: 3. Alloys.

According to the invention, the LED is mounted directly on the thermoelectric module to maximize the heat dissipation performance.

In addition, since the electrode pattern is directly formed on the thermoelectric module, the electrode pattern does not come off during soldering, and thus the reliability is excellent.

1 is a view showing a structure in which the LED module is mounted on a conventional thermoelectric module,
2 is a perspective view of a thermoelectric semiconductor integrated LED module according to an embodiment of the present invention,
3 is a cross-sectional view along the AA direction of FIG.
4 is a view showing one surface and the other surface of the first substrate of the thermoelectric module according to an embodiment of the present invention,
5 is a view showing one surface and the other surface of the second substrate of the thermoelectric module according to an embodiment of the present invention,
6 is a view showing the configuration of a thermoelectric module according to an embodiment of the present invention,
7 is a conceptual diagram illustrating a process in which a thermoelectric module emits heat emitted from an LED according to an embodiment of the present invention.

The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated and described in the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Terms including ordinals, such as first, second, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

2 is a perspective view of a thermoelectric semiconductor integrated LED module according to an embodiment of the present invention, Figure 3 is a cross-sectional view of a thermoelectric semiconductor integrated LED module according to an embodiment of the present invention.

2 and 3, the thermoelectric semiconductor integrated LED module according to the present invention includes a thermoelectric module 100, a light emitting device 140 mounted on the thermoelectric module 100, and the thermoelectric module 100. It includes a heat dissipation plate 200, and the heat dissipation member 300 is fixed to the heat dissipation plate 200, the heat applied from.

In the thermoelectric module 100, a plurality of thermoelectric semiconductors 130 are disposed between the first substrate 110 and the second substrate 120 to absorb heat from the first substrate 110 when power is applied to the second substrate ( 120). The thermoelectric module 100 may be applied to a variety of known structures that can implement the Peltier effect.

The light emitting device 140 is directly mounted on the first substrate 110 of the thermoelectric module 100 and configured to quickly discharge heat emitted from the light emitting device 140 to the outside. Existing light emitting devices are mounted on a circuit board to form a package, and then attached to the thermoelectric module using an adhesive or the like, which causes a problem in that the heat dissipation efficiency decreases due to the heat resistance generated from the adhesive and the substrate.

However, according to the present invention, since the light emitting device 140 is directly mounted on the thermoelectric module 100 without a separate circuit board, heat dissipation is maximized. That is, one surface of the thermoelectric module 100 serves as a circuit board.

In this case, the light emitting device 140 may be configured as an LED package and electrically connected to an electrode pattern formed on the first substrate 110. However, the light emitting device 140 is not limited thereto, and an LED chip (bare chip) may be directly mounted. When the light emitting device 140 is an LED chip, a separate cover and a fluorescent layer may be added. Hereinafter, the light emitting device 140 will be described as being an LED package.

The heat dissipation plate 200 serves to discharge heat to the outside in contact with the thermoelectric module 100. The heat dissipation plate 200 may be made larger than the thermoelectric module 100 so that the thermoelectric module 100 is seated, and a separate heat dissipation member 300 so as to quickly discharge the heat applied from the thermoelectric module 100 to the outside. ) Can be fixed.

The heat dissipation member 300 may be applied to any of the heat dissipating components, and may be manufactured in the same shape as the heat dissipation fin in addition to the pipe shape shown. In this case, the heat dissipation member 300 may be fixed to the heat dissipation plate 200 by the clip 310. However, the present invention is not limited thereto and may be fixed using a separate adhesive.

According to the present invention, since the LED 140 is directly mounted on the thermoelectric module 100, the heat emitted from the LED 140 is directly emitted through the thermoelectric module 100, and thus the cooling effect is maximized.

4 is a view showing one surface and the other surface of the first substrate of the thermoelectric module according to an embodiment of the present invention, Figure 5 is a view showing one surface and the other surface of the second substrate of the thermoelectric module according to an embodiment of the present invention. 6 is a view showing the configuration of a thermoelectric module according to an embodiment of the present invention.

Referring to FIG. 4A, a first electrode pattern 113 on which the LED 140 may be mounted is formed on one surface 111 of the first substrate 110 of the thermoelectric module 100. The first electrode patterns 113 are formed in the same number as the LEDs 140 are mounted, and pads 115 and 116 are formed at ends thereof to which power is connected.

The first substrate 110 and the second substrate 120 may be made of a material (eg, an alumina substrate) that is electrically insulated and has high thermal conductivity. Therefore, regions other than the electrode pattern are formed are electrically insulated.

In detail, the first electrode pattern 113 is formed of an alloy in which silver (Ag) and lead (Pd) are mixed at 5: 5 to 7: 3. When the adhesive is used when the LED 140 is mounted, there is a problem that the heat dissipation efficiency is low due to high thermal resistance. Therefore, in the present invention, the LED 140 is mounted on the first electrode pattern 113 using solder.

However, the solder is generally a paste in which tin and silver are mixed, so when the first electrode pattern 113 is formed only of silver, the silver component is formed of tin of the solder. Sn). Thus, a problem arises in which the first electrode pattern 113 is peeled off the substrate. This problem affects the reliability of the LED 140.

Therefore, in the present invention, the first electrode pattern 113 is formed of an alloy mixed with silver (Ag) and lead (Pd) to prevent the electrode pattern from peeling off during soldering. Preferably, silver (Ag) and lead (Pd) are mixed at 5: 5 to 7: 3, which is advantageous to prevent peeling of the electrode during soldering.

Referring to FIG. 4B, a second electrode pattern 117 is formed on the other surface 112 of the first substrate 110. The second electrode pattern 117 is not directly connected to a power source, but serves to electrically connect the N-type thermoelectric semiconductor and the P-type thermoelectric semiconductor.

The second electrode pattern 117 may be applied to any kind of conductive material. For example, an electrode pattern may be formed using an alloy in which silver (Ag) and lead (Pd) are mixed. The arrangement of the second electrode pattern 117 is appropriately adjusted according to the insertion position of the thermoelectric semiconductor 130.

Referring to FIG. 5A, a third electrode pattern 123 is formed on one surface 121 of the second substrate 120. The third electrode pattern 123 is an electrode that contacts the N-type thermoelectric semiconductor 130 and the P-type thermoelectric semiconductor 130 to apply power. Pads 124 and 125 to which power is applied are formed at ends of one surface 121. In addition, as shown in (b) of FIG. 5, the metal layer 126 is printed on the other surface 122 of the second substrate 120 to be bonded to the heat dissipation plate 200 by soldering. The material of the metal layer 126 is not limited.

6 is a view showing the configuration of a thermoelectric module according to an embodiment of the present invention, Figure 7 is a conceptual diagram showing a process in which the thermoelectric module emits heat emitted from the LED according to an embodiment of the present invention.

Referring to FIG. 6, an N-type thermoelectric semiconductor 131 and a P-type thermoelectric semiconductor may be interposed between the second electrode pattern 117 of the first substrate 110 and the third electrode pattern 123 of the second substrate 120. 132 is mounted. In this case, an epoxy coating covering the thermoelectric semiconductor 130 may be performed.

Referring to FIG. 7, when power is applied to the thermoelectric semiconductors 131 and 132, an endothermic reaction occurs in the region of the first substrate 110 and an exothermic reaction occurs in the region of the second substrate 120. Therefore, heat emitted from the LED 140 may be rapidly released to the second substrate 120 through the thermoelectric semiconductor 130. As described above, since the LED 140 is directly formed on the upper surface of the first substrate 110, heat dissipation is further maximized.

Hereinafter, a manufacturing step of the thermoelectric semiconductor integrated LED module will be described.

First, an Ag / Pd electrode pattern (first electrode pattern 113) is formed on one surface of the first alumina substrate 110 and dried. After the Ag / Pd electrode pattern (second electrode pattern, 117) is formed on the other surface and dried, the first alumina substrate is fired at a temperature of 850 ° C. or higher to finish pattern formation on the first alumina substrate.

Thereafter, an Ag / Pd electrode pattern (third electrode pattern 123) is formed on one surface of the second alumina substrate 120 and dried. After the Ag layer 126 is formed on the other surface and dried, the first alumina substrate 120 is baked at a temperature of 850 ° C. or more to finish pattern formation on the second alumina substrate.

Subsequently, high temperature solders of 96.5 sn and 3.5 Ag are printed on the second electrode pattern 117 and the third electrode pattern 123, and the thermoelectric module 100 is soldered after mounting the thermoelectric semiconductor 130 therebetween. To make.

Thereafter, a low temperature solder is printed on the first electrode pattern 113 formed on one surface of the first alumina substrate and the LED 140 is mounted.

Thereafter, solder is printed and soldered between the Ag layer 126 formed on the other surface of the second alumina substrate 120 and the heat dissipation plate 200. Thereafter, the epoxy coating on the thermoelectric semiconductor 140 is cured to complete the fabrication.

The table below shows data experimenting whether the heat emitted from the LED was effectively released by the thermoelectric semiconductor integrated LED module manufactured by the above-described method. Here, the comparative example was experimented with the structure of the conventional thermoelectric module shown in FIG.

LED module load LED temperature Comparative example (conventional) Experimental Example (Invention) DC 13.5V, 500mA 36.2 ℃ 25.4 DEG C 1.7 ℃ DC 13.5V, 700mA 46.6 ℃ 34.4 ℃ 10.5 ℃ DC 13.5V, 1.0A 62.5 DEG C 43.5 ℃ 19.2 ℃ DC 13.5V, 1.2A 76.5 ℃ 50.6 ℃ 28.2 ℃ DC 13.5V, 1.4A 88.0 ℃ 60.2 ℃ 37.5 ℃

As can be seen in Table 1, according to the present invention as compared to the conventional structure it can be seen that the heat dissipation efficiency is significantly improved. Specifically, it can be seen that the difference in heat dissipation effect increases as the temperature of the LED module increases with increasing amount of current.

When the current applied to the LED is 1.4A, the temperature of the LED goes up to 88 ° C, but since the heat is rapidly released by the thermoelectric module, it can be seen that the temperature falls to 37.5 ° C. Therefore, it can be seen that the present invention is very excellent in preventing degradation of LEDs and improving light output efficiency.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

100: thermoelectric module 110: the first substrate
120: second substrate 130: thermoelectric semiconductor
140: LED 200: heat dissipation plate
300: heat dissipating member

Claims (12)

A first substrate having one side and the other side;
A second substrate facing the other surface of the first substrate;
A plurality of thermoelectric semiconductors disposed between the first substrate and the second substrate;
A light emitting device mounted directly on one surface of the first substrate;
A first electrode pattern formed on one surface of the first substrate to mount the light emitting device; And
A first solder is bonded to the light emitting device and the first electrode pattern,
The first electrode pattern includes silver (Ag) and lead (Pd), and the solder includes tin (Sn), thermoelectric semiconductor integrated LED module.
The method of claim 1,
The first substrate and the second substrate is an alumina (Al ₂ O ₃ ) substrate, the thermoelectric semiconductor absorbs heat generated in the first substrate and emits to the second substrate, the thermoelectric semiconductor integrated LED module.
delete The method of claim 1,
The first electrode pattern is an alloy in which silver (Ag) and lead (Pd) are mixed in a 5: 5 to 7: 3, thermoelectric semiconductor integrated LED module.
delete The method of claim 1,
The first solder is an alloy in which tin (Sn) and silver (Ag) are mixed, the thermoelectric semiconductor integrated LED module.
The method of claim 1,
The thermoelectric semiconductor integrated LED module, the electrode pattern for applying power to the thermoelectric semiconductor is formed on the other surface of the first substrate and one surface of the second substrate.
The method of claim 1,
A heat dissipation plate to which the second substrate is attached,
And the second substrate and the heat dissipation plate are joined by a second solder.
9. The method of claim 8,
Thermoelectric semiconductor integrated LED module comprising a heat radiation member attached to the heat radiation plate.
The method of claim 1,
The light emitting device is an LED chip or LED package, thermoelectric semiconductor integrated LED module.
delete delete

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