KR101360732B1 - Light emitting diode package - Google Patents

Abstract

The present invention relates to a light emitting diode package and a manufacturing method thereof.

A light emitting diode package according to an embodiment of the present invention includes a base substrate on which electrode pads are formed; A silicon frame attached to the substrate with an open element receiving hole; It includes a light emitting diode electrically connected to the electrode pad in the open device receiving hole.

LED, package, silicon

Description

Light Emitting Diode Package {LED PACKAGE}

1 is a cross-sectional view showing a conventional LED package.

2 is a front view showing a silicon wafer in manufacturing a light emitting diode package according to an embodiment of the present invention.

3 is a front view of the base substrate in manufacturing the LED package according to the embodiment of the present invention.

4 is an exploded cross-sectional view of a silicon wafer and a substrate according to an embodiment of the present invention.

5 is a side cross-sectional view of a light emitting diode mounted on a stacked structure of a silicon wafer and a substrate according to an exemplary embodiment of the present invention.

6 is a front view of the LED package according to the embodiment of the present invention.

7 is a side cross-sectional view of FIG. 6.

<Explanation of symbols for the main parts of the drawings>

100: light emitting diode package 101: silicon wafer

101a: silicon frame 103: element storage hole

105: reflecting surface 107: package boundary hole

111 base substrate 112 insulating layer

113,115 electrode pad 119 adhesive

121: light emitting diode 122: wire

123: mold member

The present invention relates to a light emitting diode package and a manufacturing method thereof.

A light emitting diode is a semiconductor device that can realize various colors by forming a light emitting source using compound semiconductor materials such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP.

In general, the criteria for determining the characteristics of the light emitting diode device include a range of color, luminance, and luminance intensity, and the characteristics of the light emitting diode device are primarily applied to the compound semiconductor material used in the light emitting diode device. Although determined by the secondary element, the package structure for mounting a chip as a secondary element is also greatly influenced, and thus, a lot of attention has been paid to the package structure.

Particularly, according to the trend toward miniaturization and slimming of information and communication devices, light emitting diodes are being miniaturized, such as resistors, capacitors, and noise filters, and are directly mounted on a printed circuit board (PCB). It is made of Surface Mount Device (SMD) type. Accordingly, light emitting diode lamps, which are used as display devices, have also been developed as SMDs. Such SMD type LED lamps can replace conventional lighting lamps, which are used as lighting indicators, character indicators, and image indicators that produce various colors.

1 is a cross-sectional view illustrating a structure of a light emitting diode package according to the prior art.

As shown in FIG. 1, the LED package 20 includes a substrate (PCB) 10, an electrode pad 12 and 13, a light emitting device 14, and a filler 16 on which a reflective cup 11 is formed. do.

A pair of electrode pads 12 and 13 are formed on the substrate 10, and a light emitting element 14 is mounted on one of the electrode pads 12 and 13 by a conductive adhesive, and the light emitting element 14 is disposed on the substrate 10. Is connected to the pair of electrode pads 12 and 13 and the wire 15, respectively.

One or more light emitting devices 14 may be mounted in a package, for example, a blue LED chip or a red / blue / green LED chip.

Outside the region where the light emitting device 14 is mounted, a cup cup etched in the shape of a cup is formed on the substrate, and the reflecting cup 11 is used for light emitted from the light emitting device 14. The structure is inclined to reflect in the direction.

Filler 16, such as a transparent resin, is filled in the reflective cup 11. The filler 16 mainly uses epoxy or silicone materials, and in some cases, phosphor powder is added.

In the conventional LED package, a material constituting the package body uses a polymer material such as PPA resin. Such polymer materials have problems such as deterioration in luminous efficiency, shape deformation at high temperatures, and discoloration with time.

In addition, since the package is configured through mold manufacturing, the cost of mold manufacturing is wasted, and the shape and size are restricted.

The present invention provides a light emitting diode package and a method of manufacturing the same.

The present invention provides a light emitting diode package using a silicon frame on the outside of the package and a method of manufacturing the same.

A light emitting diode package according to an embodiment of the present invention includes a base substrate on which electrode pads are formed; A silicon frame attached to the substrate with an open element receiving hole; It includes a light emitting diode electrically connected to the electrode pad in the open device receiving hole. In addition, the LED package according to the embodiment includes a base substrate on which the electrode pad is formed; A frame having an open element receiving hole and attached to the base substrate; A light emitting diode electrically connected to the electrode pad in the open element receiving hole; And a silver layer between the frame and the electrode pad. In addition, in an embodiment, the horizontal width of the frame may be smaller than the horizontal width of the base substrate. In addition, the silver layer may directly contact the bottom of the frame. In some embodiments, the electrode pad exposed to the outside of the frame may be parallel to the top surface of the base substrate. In addition, one end of the electrode pad may be exposed to the outside of the frame. In addition, the embodiment includes a reflective surface formed inside the open element receiving hole of the frame, the reflective surface may be formed with a reflective metal material. In addition, the silver layer may contact the lower portion of the reflective surface. In addition, the thickness of the silver layer may be thinner than the thickness of the frame. The reflective surface may contact the electrode pad.

A method of manufacturing a light emitting diode package according to an embodiment of the present invention includes forming an open device receiving hole in a silicon wafer; Forming an electrode pad on the base substrate; Attaching a silicon wafer on the base substrate such that an electrode pad is placed inside the open device receiving hole; Mounting a light emitting diode on the electrode pad; And cutting the silicon wafer on which the light emitting diode is mounted in a package unit.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

2 to 5 are views illustrating a process of manufacturing a light emitting diode package according to an embodiment of the present invention, FIG. 2 is a plan view showing a silicon wafer, FIG. 3 is a plan view showing a base substrate, and FIG. 4 is a silicon wafer and a base substrate. 5 is a side sectional view showing a state in which a light emitting diode is mounted on a base substrate.

Referring to FIG. 2, an open element accommodating hole 103 and a package boundary hole 107 having a circular or polygonal (eg, hexahedral) shape are formed in the prepared silicon wafer 101. The open holes 103 and 107 have a structure in which the entire thickness (eg, at least 150 μm) of the wafer is etched through a semiconductor etching process. Here, the element accommodating holes 103 are arranged at both sides of the package boundary hole 107 at regular intervals.

The silicon wafer 101 is an electrical insulator having an electrical conductivity of 10 ¹⁰ Ωcm or more, and may be formed of a silicon wafer formed of a material having high thermal conductivity of 140 W / mK or more.

The reflective surface 105 inclined at an angle (for example, 90 to 160 degrees) outward with respect to the bottom is formed around the open element storage hole 103. A metal material (eg, Ag or Al) having high light reflectivity is deposited on the reflective surface 105.

Here, the silicon wafer 101 may include not only a silicon material but also a silicon carbide (SiC) material. The silicon material may be made of a frame having a thickness thinner than a material such as ceramic, and may prevent the frame from being deformed or discolored with temperature and time.

Referring to FIG. 3, the base substrate 111 may be formed of a metal substrate such as aluminum oxide, copper, and tungsten having good thermal conductivity. In the base substrate 111, a pair of electrode pads 113 and 115 for forming an electrode are formed at a position corresponding to the element accommodating hole 103 of the silicon wafer of FIG. 2 in a land pattern form.

In this case, an insulating layer 112 may be formed on the base substrate 111 as shown in FIGS. 3 and 4 to form the electrode pads 113.

As shown in FIGS. 4 and 5, after the upper silicon wafer 101 and the lower base substrate 111 are positioned to face each other, the base substrate 111 is formed in the element accommodating hole 103 of the silicon wafer 101. ) So that the positive electrode pads 113 and 115 of the () are placed and the package boundary hole 107 is placed between the positive electrode pads (113 and 115), and then attach the silicon wafer 101 to the base substrate 111. . Here, the silicon wafer 101 may be bonded onto the substrate 111 using an adhesive agent 119 such as an Ag adhesive material or a polymer resin such as epoxy.

The light emitting diode 121 is attached to one of the electrode pads 113 and 115 of the base substrate 111 by using a conductive adhesive, and bonded to the other pad by a wire 122. Here, the light emitting diode 121 may be used as a compound semiconductor such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP. For example, the light emitting diode 121 may be configured as one or more blue LED chips or one or more red / green / blue LED chips for lighting. have. The light emitting diode 121 may be mounted on the electrode pad by wire bonding or flip chip bonding.

In addition, a transparent mold member 123 of silicon or epoxy is filled around the device accommodating hole 103 and the light emitting diode 121 region. In this case, the yellow member for YAG or silicate may be contained in the mold member 123, which excites blue light as yellow light when a blue LED chip is mounted therein, and blue and yellow light are mixed to white light. To output

Thereafter, the silicon wafer 101 is cut in each package unit using the package boundary hole 109 to obtain the individual LED package 100 as illustrated in FIGS. 6 and 7.

6 is a front view of the LED package according to the present invention, Figure 7 is a side cross-sectional view of FIG.

6 and 7, the light emitting diode package 100 forms electrode pads 113 and 115 on the base substrate 111, and then forms a silicon frame 101a having a container-shaped element accommodating hole 103. Attach it. At this time, the silicon frame 101a is attached onto the base substrate 111 using the adhesive 109.

Here, the container-shaped element accommodating hole 103 has a structure in which a reflective surface 105 inclined in an outward direction of 90 to 160 degrees or more with respect to the bottom surface is formed.

In addition, the light emitting diode 121 is mounted on the electrode pads 113 and 115 of the base substrate 111 with the wires 122, and then the transparent mold member containing the phosphor is filled in the container-shaped element accommodating hole 103. By curing, the LED package is completed.

In this case, both ends of the electrode pads 113 and 115 of the base substrate 111 may be exposed to the outside of the package, and may be electrically connected to both terminals of the electrode pads 113 and 115 from the outside.

In addition, the present invention may be equipped with a protective element for protecting the light emitting diode on the silicon frame or on the internal electrode pad.

The light emitting diode package 100 is a chip on board (COB) type and has excellent heat dissipation and light efficiency, and thus may be provided for a power package of 3W or more.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications not illustrated in the drawings are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

According to the LED package and the manufacturing method thereof according to the present invention, since the outer frame of the silicon material is used for the LED package, there is an effect that can be made thinner than using a material such as ceramic.

In addition, since the outer frame of the silicon material is used, the disadvantages due to the shape and discoloration can be compensated for, thereby improving the reliability of the package.

Claims (13)

A base substrate on which electrode pads are formed; A frame having an open element receiving hole and attached to the base substrate; A light emitting diode electrically connected to the electrode pad in the open element receiving hole; A silver layer between the frame and the electrode pad; And And a reflective surface formed inside the opened element accommodating hole of the frame. The reflective surface is in contact with the electrode pad, The silver layer is in contact with the lower portion of the light emitting diode package. The method according to claim 1, The base substrate is a light emitting diode package comprising a metal substrate. The method according to claim 1, A light emitting diode package comprising an insulating layer formed between the base substrate and the electrode pad. The method according to claim 1, The horizontal width of the frame A light emitting diode package smaller than the horizontal width of the base substrate. In accordance with claim 1, And a mold member formed in the open element accommodating hole and around the light emitting diode. The method according to claim 1, The silver layer is, A light emitting diode package in direct contact with the bottom of the frame. The method according to claim 1, The electrode pad exposed to the outside of the frame is parallel to the top surface of the base substrate. The method according to claim 1, The LED package around the open element receiving hole is formed with a reflective surface inclined to more than 90 degrees ~ less than 160 degrees with respect to the bottom surface. The method according to any one of claims 1 to 8, The silver layer LED package as an adhesive layer. The method according to any one of claims 1 to 8, One end of the electrode pad The light emitting diode package exposed to the outside of the frame. The method according to any one of claims 1 to 8, The reflective surface is a light emitting diode package formed with a reflective metal material. delete The method according to any one of claims 1 to 8, The thickness of the silver layer is A light emitting diode package thinner than the thickness of the frame.

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