KR101358641B1 - Thin film deposition method - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus and a control method thereof. In the thin film deposition apparatus according to the present invention, a plurality of substrates are moved along a predetermined closed path and a plurality of gas supply units for supplying source gas and plasma are provided along the closed path to control the thin film deposition apparatus for performing a deposition process. Wherein the substrate is located at a predetermined same position on the closed path at the beginning and at the end of the deposition process, or at a predetermined starting position on the closed path at the beginning of the deposition process. At the end, characterized in that located in the end position facing the starting position along the menopause.

Description

Thin film deposition method

The present invention relates to a thin film formation method.

(CVD), plasma enhanced chemical vapor deposition (PECVD), and atomic layer deposition (MOCVD) as a deposition method for forming a thin film on a substrate such as a semiconductor wafer A technique such as ALD (atomic layer deposition) is used.

20 is a schematic diagram showing the basic concept of the atomic layer deposition method in the substrate deposition method. Referring to FIG. 20, the atomic layer deposition method is a method in which a source gas including a raw material such as trimethyl aluminum (TMA) is sprayed on a substrate, and then an inert purge gas such as argon (Ar) A single molecular layer is adsorbed on the substrate and a reactive gas including a reactant such as ozone (O ₃ ) reacting with the raw material is injected, and then a single atomic layer (not shown) is formed on the substrate through inert purge gas injection and unreacted substance / Al-O).

The conventional thin film deposition apparatus used in the atomic layer deposition method has various kinds depending on the injection direction and the method for the substrate surface on which the source gas, the reactive gas, the purge gas and the like are to be deposited. However, the conventional method of controlling the thin film deposition apparatus by the atomic layer deposition method has a problem that cannot satisfy both the thin film and the substrate throughput of excellent quality. That is, when the thin film of excellent quality is achieved, there is a disadvantage that the throughput of the substrate is remarkably low. On the other hand, when the throughput of the substrate is improved, the quality of the thin film is deteriorated.

An object of the present invention is to provide a method for controlling a thin film deposition apparatus that can significantly improve the throughput of a substrate in order to solve the above problems. In addition, an object of the present invention is to provide a method for controlling a thin film deposition apparatus capable of providing a high quality thin film having a uniform thickness while increasing the substrate throughput.

In the above-described object of the present invention, in the thin film deposition apparatus in which a plurality of substrates are moved along a predetermined closed path and a plurality of gas supply units are provided along the closed path to supply source gas and plasma. The substrate is located at a predetermined same position on the closed path at the beginning and at the end of the deposition process, or at a predetermined starting position on the closed path at the beginning of the deposition process and at the end of the deposition process. It is achieved by a thin film deposition apparatus, characterized in that located in the end position facing the starting position along the closed path.

Here, the closed path includes a pair of straight paths arranged in parallel and spaced apart a predetermined distance and a pair of curved paths connecting the pair of straight paths, the gas supply unit is provided with at least one pair, The pair of gas supply units are provided symmetrically along the pair of straight paths, respectively.

On the other hand, the interval between the gas supply unit disposed in the straight path is greater than the diameter of the substrate, the substrate is located in the space between the gas supply unit at the start and end of the deposition process. In this case, at the beginning and at the end of the deposition process, the substrate is positioned so as not to overlap the gas supply part.

On the other hand, an object of the present invention as described above is a plurality of substrates are moved along a pair of curved paths connecting a pair of straight paths and a pair of straight paths, a plurality of gas supply for supplying a source gas and plasma In addition, at least one or more pairs are provided, and the pair of gas supply units are provided symmetrically along the pair of straight paths, respectively. By the control method of the thin film deposition apparatus characterized in that the one or more pairs of gas supply units provided symmetrically along the pair of straight paths to terminate the supply of plasma and source gas sequentially in the rotational direction of the substrate. Is achieved.

In this case, at least one pair of gas supply units supply plasma and source gas at the beginning of the deposition process, or the one or more pairs of gas supply units provided symmetrically along the pair of straight paths of the substrate. The plasma and source gas supply are sequentially started along the rotational direction.

On the other hand, an object of the present invention as described above is a plurality of substrates are moved along a pair of curved paths connecting a pair of straight paths and a pair of straight paths, a plurality of gas supply for supplying a source gas and plasma In addition, at least one or more pairs are provided, wherein the pair of gas supply units are provided symmetrically along the pair of straight paths, respectively. By the control method of the thin film deposition apparatus characterized in that the one or more gas supply unit to supply any one of the plasma and source gas at the same time, the gas supply unit sequentially supplies the other one in the rotational direction of the substrate. Is achieved. In this case, at the end of the deposition process, the gas supply unit sequentially terminates the supply of the plasma and the source gas along the rotational direction of the substrate.

On the other hand, an object of the present invention as described above is a thin film for performing a deposition process including a plurality of substrates are moved along a predetermined closed path, and provided along the closed path to supply a source gas and plasma; A control method of a deposition apparatus, comprising: a preliminary step of depositing the substrate to a predetermined first thickness or less by the gas supply unit, a deposition step of depositing the substrate to a predetermined first thickness by the gas supply unit, and the gas supply unit And a termination process for depositing the substrate to a predetermined first thickness or less. Here, in the preliminary step, the deposition thickness of the substrate is increased from a predetermined second thickness to a predetermined slope to reach the first thickness. In addition, in the termination process, the deposition thickness of the substrate is reduced from the first thickness to a predetermined third thickness by a predetermined slope. Meanwhile, the preliminary process and the terminating process are performed while the substrate is rotated a predetermined number of times along the closed path.

According to the control method of the present invention having the above-described configuration, even if the interval between the gas supply unit is not constant, the thickness of the thin film deposited on each substrate can be kept uniform. In addition, damage to the inside of the chamber can be prevented when the plasma is supplied by the gas supply unit.

Furthermore, when a thin film required for a substrate is required to have a relatively thin film having a thickness less than or equal to a predetermined thickness, an excellent quality thin film can be obtained by keeping the thickness of the thin film deposited on each substrate almost uniform.

In addition, the control method of the present invention can be applied to both a case where a thin film required for a substrate is relatively thick, having a thickness greater than or equal to a predetermined thickness, and a case where a thin film required for the substrate is relatively thin, having a thickness smaller than or equal to a predetermined thickness. have.

On the other hand, the control method according to the present invention can prevent not only the thickness of the thin film between each substrate, but also the deposition occurs in part to vary the thickness of the thin film in one substrate.

1 is a plan view showing a substrate processing apparatus according to an embodiment,
FIG. 2 is an exploded perspective view showing the chamber in FIG. 1,
3 is a sectional view taken along the line III-III in Fig. 2,
FIG. 4 is a perspective view of the substrate moving part in FIG. 2,
Fig. 5 is a perspective view showing the gas supply unit in Fig. 2,
6, 7 and 8 are cross-sectional views taken along a line VI-VI of Fig. 5 showing the configuration of various gas supply units,
9 is a perspective view showing a gas supply unit according to another embodiment,
10 is a sectional view taken along the line X-X in Fig. 9,
11 is a cross-sectional view showing a gas supply unit according to yet another embodiment,
12 is an enlarged perspective view of the 'A' region of FIG. 11,
FIG. 13 is a plan view schematically illustrating a chamber including a substrate and a gas supply unit in FIG. 2;
14 to 19 are graphs illustrating a control method according to various embodiments of the present disclosure;
20 is a schematic view showing the basic concept of a deposition apparatus.

Hereinafter, a thin film deposition apparatus and a substrate processing apparatus having the thin film deposition apparatus according to various embodiments of the present invention will be described in detail with reference to the drawings.

1 is a plan view showing the overall configuration of a substrate processing apparatus 1000 according to an embodiment.

Referring to FIG. 1, the substrate processing apparatus 1000 includes a thin film deposition apparatus 100 for performing a process such as a deposition operation on a substrate, a load lock chamber 700 capable of switching to a vacuum or atmospheric pressure state, And a plurality of boats 820 for loading a substrate on which deposition has been completed. Here, the thin film deposition apparatus 100 includes a chamber 110 in which a substrate is accommodated and a deposition operation is performed, and a substrate inlet / outlet unit 600 that draws and draws the substrate. Although the substrate processing apparatus 1000 according to the present embodiment is assumed to have two chambers 110, it is not limited thereto.

When a substrate is supplied to the chamber 110 of the thin film deposition apparatus 100, a first robot arm (not shown) inside the load lock chamber 700 transfers the substrate from the boat 810 into the load lock chamber 700 . Subsequently, the load lock chamber 700 is switched to a vacuum state, and the second robot arm 610 of the substrate inlet / outlet unit 600 passes the substrate to supply the substrate to the chamber 110. When the substrate is taken out of the chamber 110, the process proceeds in the reverse order. Hereinafter, the thin film deposition apparatus 100 of the substrate processing apparatus 1000 will be described in detail.

2 is a perspective view showing the thin film deposition apparatus 100. FIG. In FIG. 2, the chamber lid 120 is shown in an exploded perspective view to show the internal structure of the thin film deposition apparatus 100.

2, the thin film deposition apparatus 100 includes a chamber 110, a gas supply unit 200 provided in the chamber 110 to supply at least one of a process gas and a purge gas of at least one kind, a chamber 110, A substrate transfer portion 600 for moving a plurality of substrates W along a predetermined movement path within the chamber 110 and a substrate transfer portion 600 for transferring the substrate W into and out of the chamber 110 have.

The chamber 110 accommodates the substrate W therein to perform a deposition operation on the substrate, and provides a space for providing various components. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

The chamber 110 includes a chamber body 130 having a predetermined space therein and opening and closing the opened upper portion of the chamber body 130. An opening 134 through which the substrate W is drawn into and drawn out of the chamber 110 and a connector 132 connecting the substrate inlet and outlet 600 and the opening 134 are formed at one side of the chamber body 130 do.

The openings 134 may be provided in the chamber body 130 in pairs. 1, when two chambers 110 are provided in the substrate processing apparatus 1000 to connect the two chambers 110 to one substrate inlet / outlet unit 600, productivity and compatibility It is for this reason. That is, when the chamber 110 is manufactured regardless of the direction of the chamber 110 connected to the substrate inlet / outlet part 600, a pair of openings 134 are provided to improve the productivity. In addition, when it is necessary to change the connection portion of the chamber 110 while the chamber 110 is connected to the substrate inlet / outlet portion 600, the substrate inlet / outlet portion may be connected to the other opening portion to improve the compatibility have. On the other hand, when the substrate inlet / outlet part 600 is connected to one opening of the pair of openings 134, the other one opening is sealed with a shielding member (not shown).

In this embodiment, the substrate inlet / outlet part 600 is connected to the chamber 110 and serves to draw the substrate into the chamber 110 or to draw the substrate W after the deposition to the outside of the chamber 110 . When the substrate supporting unit 150 moves by the substrate moving unit 180 as described later, the substrate on which the deposition is completed is moved by the second robot arm 610 of the substrate receiving and feeding unit 600 through the opening 134 Withdraw. The substrate requiring the deposition is supplied to the substrate support 150 inside the chamber 110 through the opening 134 by the second robot arm 610 of the substrate inlet / As described above, in this embodiment, the substrate is pulled in and pulled out by a single device. Therefore, the number of components can be reduced and the installation area can be reduced as compared with a separate device for introducing and withdrawing the substrate, for example, a substrate inlet and a substrate outlet separately. In addition, since the components are reduced, the configuration can be simplified and the maintenance can be easily performed in the future.

Meanwhile, the chamber lid 120 of the chamber 110 is provided with a gas supply unit 200 for supplying at least one of a process gas and a purge gas of one or more types, which will be described in detail later.

The chamber body 130 of the chamber 110 is provided with a substrate transfer part 180 for transferring the substrate W along a predetermined movement path. The movement path includes a linear path L for moving the substrate supporting part 150 supporting the substrate W along a predetermined straight line and a curved path C for moving the substrate supporting part 150 along a predetermined curve do.

The conventional thin film deposition apparatus has a so-called " shower head " for supplying a process gas and / or a purge gas, rotates the substrate circularly at a predetermined speed, and supplies the process gas to the showerhead to perform deposition Respectively. However, in such a shower head system, the moving path of the substrate is formed in a circular shape, so that the rotation angular velocity of the circular central portion and the outer peripheral portion are different. Therefore, the deposition of the substrate region adjacent to the center of the circle and the substrate region adjacent to the circular outline proceeds differently, and the thickness of the deposition varies on one substrate. In this embodiment, in order to solve the above-described problems, when the substrate W is moved to perform deposition, the deposition operation is performed while the substrate W moves linearly. That is, the substrate includes a linear path through which the substrate can move linearly, and a deposition operation is performed while the substrate moves along the linear path. When the substrate moves along the linear path, the surface area of the substrate moves all at the same speed, so there is no possibility that the thickness of the deposition is changed during the deposition operation.

In the present embodiment, the aforementioned movement path includes a straight path L for moving the substrate supporting part 150 along a predetermined straight line, and a curved path C for moving the substrate supporting part 150 along a predetermined curve. For example, the substrate moving part 180 moves the substrate supporting part 150 along a predetermined closed loop. Here, the menopausal path may be defined as a path that passes the starting point again while moving along a predetermined path from one starting point. To this end, the substrate transfer part 180 according to the present embodiment can move the substrate support part 150 along a pair of straight path L and a curved path C, respectively. That is, a pair of linear paths L are arranged substantially parallel to each other at a predetermined interval, and a pair of curved paths C are connected between the linear paths L. Here, the curved path C may be a semicircular shape having a predetermined radius, or may be any curved shape other than a straight shape.

Accordingly, in this embodiment, the gas supply part 200 is provided along the straight path L of the substrate transfer part 180. If the process gas is supplied while the substrate W is mounted on the substrate supporter 150 and moves along the linear path L, the velocity of all the regions of the substrate W becomes constant, It can be made uniform.

Also, in this embodiment, the substrate inlet / outlet part 600 may be provided in the curved path C. As described above, when the substrate W moves along the curved path C, the rotational angular velocity of the surface region of the substrate W varies along the central portion and the outer portion of the curved line. Accordingly, the curved path C may include a substrate inlet / outlet part 600 to allow the substrate W to be drawn into and / or drawn out of the chamber 110, thereby improving space utilization. In this case, the above-described opening 134 may be provided in the chamber body 130 adjacent to the curved path C. Hereinafter, the substrate moving unit 180 will be described in more detail with reference to the accompanying drawings.

FIG. 3 is a cross-sectional view taken along the line III-III in FIG. 2, and FIG. 4 is a partial perspective view showing the structure of the substrate moving part 180 in detail.

3 and 4, the substrate moving unit 180 includes a power transmitting member 190 to which the substrate supporting unit 150 is connected and interlocked, a power transmitting member 190 for moving the power transmitting member 190 along the linear path and the curved path And a guide part 160 for movably supporting the driving part and the substrate supporting part 150.

Specifically, a pair of pulleys 182 and 184 are provided at a predetermined distance from the inner bottom of the chamber body 130, and a power transmitting member 190 is provided surrounding the pair of pulleys 182 and 184. Here, the power transmitting member 190 may be formed of, for example, a belt, a chain, or the like. One of the pair of pulleys is connected to a motor (not shown) to serve as a drive pulley 182 for moving the power transmitting member 190, and the other pulley serves to drive the drive pulley 182, And serves as a driven pulley 184 that rotates together by the drive shaft 190. Therefore, in this embodiment, the pair of pulleys 182 and 184 and the motor correspond to the drive unit.

The substrate support 150 supporting the substrate W is connected to the power transmitting member 190 and moves together with the power transmitting member 190. More specifically, the substrate supporter 150 includes a susceptor 152 on which the substrate W is placed, a lower supporter 156 provided below the susceptor 152 and having a later-described rolling member 158, And a connection portion 154 connecting the lower support portion 156 and the susceptor 152 and connected to the power transmitting member 190.

The susceptor 152 has a susceptor 152 on which a substrate W is mounted and a susceptor 152 is mounted on the susceptor 152 in order to prevent movement of the substrate W during movement of the substrate supporter 150. [ (See Fig. 2). The connection portion 154 is connected vertically downward from one end of the susceptor 152.

The substrate supporting unit 150 moves in conjunction with the movement of the power transmitting member 190. The substrate supporting unit 150 moves along the moving path of the substrate supporting unit 150 while moving the substrate supporting unit 150, The guide portion 160 can be provided. The guide unit 160 may be implemented in various forms. In this embodiment, the guide unit 160 is provided as a linear motion (LM) guide provided below the substrate support unit 150. That is, the LM guide is provided at the bottom of the chamber body 130, and the substrate support 150 is moved along the LM guide while being supported by the LM guide.

As described above, the substrate moving unit 180 moves the substrate supporting unit 150 along a straight path and a curved path. The path through which the substrate supporting unit 150 moves is substantially formed by the guide unit 160 do. Accordingly, in this embodiment, the guide portion 160 is provided to include a straight path and a curved path, and specifically, each of the guide portions 160 is configured to include a pair of a straight path L and a curved path C, respectively. A pair of linear paths L are provided at predetermined intervals, and the configuration in which both ends of the linear path L are connected by the curved path C is as described above.

The substrate support 150 may include a roller 158 corresponding to the guide 160 so that the substrate support 150 can move along the guide 160. For example, the lower support portion 156 of the substrate supporting portion 150 is provided with a guide portion 160, that is, a roller capable of moving along the LM guide. When the substrate supporting unit 150 moves in conjunction with the power transmitting member 190, the substrate supporting unit 150 is supported by the guide unit 160 and moves along the guide unit 160. The power transmitting member 190 provides a force to move the substrate supporting part 150 and the guide part 160 moves the substrate supporting part 150 while the substrate supporting part 150 moves, .

On the other hand, a connection portion 154 is vertically connected to one end of the susceptor 152 downward. The connecting portion 154 is connected to the power transmitting member 190 to allow the power transmitting member 190 to move together with the power transmitting member 190 when the power transmitting member 190 moves. The connecting portion 154 is preferably detachably connected to the power transmitting member 190. This is because it may happen that the substrate support 150 is separated from the power transmitting member 190 for maintenance of the substrate support 150.

Referring to FIGS. 2 and 3, a heating unit 170 for heating the substrate W may be provided below the substrate supporting unit 150. The heating unit 170 is provided at a lower portion spaced apart from the susceptor 152 for supporting the substrate W to heat the substrate W.

Specifically, the heating unit 170 includes a plurality of heating plates 172 provided along the movement path of the substrate supporting unit 150. The heating plate 172 is provided at a predetermined distance from the susceptor 152 that supports the substrate W to heat the substrate W. In this embodiment, the substrate supporter 150 includes a susceptor 152, a connection part 154 vertically connected downward from one end of the susceptor 152, and a lower support part 156. That is, the cross section of the substrate support part 150 may have a '⊃' or '⊂' shape as shown in FIG. 3. The heating plate 172 is provided in a space between the susceptor 152 and the lower holding portion 156 to prevent interference between the substrate supporting portion 150 and the heating plate 172 during movement of the substrate supporting portion 150 do.

In the chamber 110, a substrate receiving part 140 for receiving and drawing out the substrate W may be provided. The substrate receiving portion 140 receives the substrate W supplied into the chamber 110 by the substrate inlet / outlet portion 600 and places the substrate W on the substrate supporting portion 150, The substrate W can be drawn out to the outside of the chamber 110 by separating the substrate W from the substrate W. [ For this purpose, the substrate receiving portion 140 is preferably provided adjacent to the substrate inlet / outlet portion 600. Accordingly, the substrate receiving portion 140 can be provided in the curved path C.

The substrate receiving portion 140 includes a plurality of receiving pins 142 that are vertically movable and a driving portion 144 that moves the receiving pins 142 up and down. The receiving pins 142 are plurally provided to support the substrate W, and are formed of, for example, three. In FIG. 2, reference numeral 146 denotes a through hole provided in the heating plate 172 so that the receiving pin 142 can move up and down. That is, in the course of movement of the substrate supporting part 150, the curved path C is provided with the substrate drawing-out part 600, and the substrate drawing pin 142 is heated The plate 172 has a through hole 146 through which the substrate receiving pin 142 can move. Needless to say, the number of the through holes 146 is formed corresponding to the number of the substrate receiving pins 142.

Meanwhile, as described above, the gas supply unit 200 is provided along the linear path L while the substrate supporting unit 150 is moving. In FIG. 2, three gas supply units 200 are shown as being provided along the straight path L, but this is merely an example, and can be appropriately adjusted according to the length of the straight path and the width of the gas supply unit 200. The gas supply unit 200 is provided on the chamber 110, specifically, on the chamber lid 120. Specifically, the chamber lid 120 is provided with an opening 122, and the gas supply part 200 is provided in the opening 122. [ Hereinafter, the gas supply unit 200 will be described in detail with reference to the drawings.

FIG. 5 is an enlarged perspective view of the gas supply unit 200 in FIG. 2. FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5 and shows a specific configuration of the gas supply unit 200.

5 and 6, the gas supply unit 200 includes a cover 205 for sealing the opening of the chamber lid 120, and a first process gas (or 'material gas') or a second process gas At least two gas supply modules 300 for supplying a purge gas and a plasma electrode 350 provided between the gas supply module 300 and supported by the chamber lid 120.

The cover 205 is provided on the upper part of the chamber lid 120 to seal the opening of the chamber lid 120. Accordingly, although not shown in the drawings, a gasket (not shown) may be provided between the cover 205 and the chamber lid 120 for sealing. The cover 205 may be provided with a process gas, purge gas, or various lines for the gas to be exhausted, to the gas supply module 300, which will be described in detail later.

Specifically, the cover 205 may be provided with a first supply line 210 for supplying a first process gas (or a 'source gas') and / or a purge gas. The first supply line 210 is connected to a first process gas source (not shown) and / or a purge gas source (not shown) to supply the first process gas and / or purge gas to the gas supply module 300 . Further, the cover 205 may further include a second supply line 220 for supplying a second process gas (or 'reaction gas'). The second supply line 220 may be connected to a second process gas source (not shown) to supply the second process gas toward the plasma electrode 350. The cover 205 may further include an exhaust line 230 for exhausting the process gas and / or the purge gas supplied from the gas supply module 300. The exhaust line 230 is connected to a pumping unit (not shown) to exhaust the residual gas inside the chamber 110 by pumping the pumping unit.

As described above, the gas supply unit 200 is provided with the gas supply module 300 for supplying the first process gas and / or the purge gas. The gas supply module 300 has a supply channel 212 through which the first process gas and / or purge gas travels. In this embodiment, the gas supply module 300 is seated and fixed at the edge of the opening 122 of the chamber lid 120. The gas supply module 300 is spaced apart from the adjacent gas supply modules by a predetermined distance to form a space therebetween.

The provision of the gas supply module 300 for supplying the process gas and / or the purge gas as in the present embodiment has an advantage that various types of gas can be supplied. That is, when the gas supply unit is formed integrally with one member as in the conventional case, there is a problem that the gas supply unit needs to be replaced as a whole when the number of the gas supplied or the order of the gas changes depending on the type of the substrate, . However, in the present embodiment, the gas supply module 300 is detachably provided, so that the number of the gas supplied by adjusting the number of the gas supply module 300 provided in the opening 122 of the chamber lid 120 is appropriately adjusted. It is possible to adjust. Accordingly, the number of the gas supply module 300 can be easily increased even if the number of the supplied gas and the order of the gas are changed, so that the gas supply unit 200 according to the present embodiment has an advantage of excellent compatibility with the conventional one .

Although the gas supply unit 200 includes two gas supply modules 300 on both sides of the plasma electrode 350 in the present embodiment, this is only an example, and the number of the gas supply modules 300 is It can be adjusted appropriately. It is also possible to provide the same number of gas supply modules 300 on both sides of the plasma electrode 350 or to provide different numbers of gas supply modules 300 on both sides of the plasma electrode 350 .

As described above, the cover 205 is connected to the first supply line 210 for supplying the first process gas and / or the purge gas. The first supply line 210 extends into the interior of the cover 205 to supply the first process gas and / or purge gas to the supply channels 212 of the gas supply module 300. Although not shown in the drawings, the first supply line 210 may have a plurality of supply holes or a supply slit of a predetermined length. The first supply line 210 may be connected to the supply channel 212 of the direct gas supply module 300 or may be connected to the supply channel 212 of the cover 205, 206 may be provided. That is, the supplemental channel 206 extends along the cover 205 at the first supply line 210 and communicates with the supply channel 212. Therefore, the gas supplied from the first supply line 210 is supplied through the auxiliary channel 206 and the supply channel 212.

On the other hand, when the first process gas is supplied through the gas supply module 300, it is preferable that the first process gas is not directly exhausted from the end of the supply channel 212 and a sufficient deposition time is maintained at the substrate surface. This is because the more the process gas has a sufficient deposition time at the substrate surface, the more favorable the deposition. It is also preferable that the process gas is uniformly diffused and supplied toward the substrate W when the process gas is supplied. This is because, when the deposition process is performed on the substrate W, it is advantageous for uniform deposition thickness that the process gas is uniformly diffused and supplied on the surface of the substrate W. [

Thus, in this embodiment, the gas supply module 300 is provided with a confinement portion 315 that allows the gas to diffuse uniformly at the end of the supply channel 212 and allows the process gas to remain sufficiently at the surface of the substrate W . The limiting part 315 is provided at an end of the gas supply module 300 so that the gas supplied by the supply channel 212 is discharged to a predetermined space (hereinafter referred to as a 'reaction space' ). ≪ / RTI > That is, as shown in FIG. 6, the step portion 312 may be provided to form a reaction space at the end of the gas supply module 300. Accordingly, the reaction space having a wider width than the width of the supply channel 212 is formed to form the limiting part 315. Accordingly, the process gas supplied through the supply channel 212 is diffused in the reaction space defined by the defining unit 315 and supplied to the surface of the substrate W. Further, the process gas is divided by the defining unit 315, The substrate is brought into contact with the substrate for a sufficient time. Here, the step portion 312 forming the defining portion 315 has been described as an example, and can be implemented in various forms.

On the other hand, various process gases are supplied into the chamber 110, and when such process gas remains in the chamber 110, deposition may occur in an undesired region other than the substrate due to mutual reaction. Such unnecessary deposition requires a frequent cleaning operation of the thin film deposition apparatus 100 when the thin film deposition apparatus 100 is used for a long time, which causes a lot of time and cost in maintenance. Therefore, the thin film deposition apparatus 100 may include an exhaust means for exhausting the gas remaining in the chamber 110. The thin film deposition apparatus 100 of this embodiment is provided with an exhaust means in the gas supply unit 200.

Specifically, the gas supply unit 200 includes at least two gas supply modules 300, and at least one of the gas supply modules 300 is provided at a predetermined distance from the other. Thus, a space between the gas supply modules 300 forms an exhaust channel 332 for exhausting the residual gas. That is, in this embodiment, a space is provided between the gas supply modules for supplying the process gas and / or the purge gas, instead of forming the exhaust channel by providing a separate member for forming the exhaust channel, as an exhaust channel . Therefore, in this embodiment, the number of constituent elements and the manufacturing process can be reduced when the gas supply unit is manufactured, so that it is possible to remarkably reduce the cost and time when assembling the thin film deposition apparatus. The exhaust channel 332 is connected to an exhaust line 230 provided in the cover 205 to exhaust the residual gas to the outside by pumping the pumping unit.

Meanwhile, unnecessary vapor deposition may occur in the exhaust channel 332 due to the reaction between the process gases when the process gas capable of reacting with each other is exhausted together with the gas exhausted through the exhaust channel 332. That is, deposition may occur outside the gas supply module 300. This prevents the exhaust gas from being smoothly exhausted, and thus requires a cleaning operation. However, in the case of performing the cleaning operation, if the gas supply module 300 is separated and cleaned, a process of reassembling becomes necessary. This increases the cost, process and time of assembling, which is a problem. Hereinafter, a gas supply unit according to another embodiment will be described in order to solve the above problems.

Fig. 7 shows a gas supply unit according to another embodiment for solving the above-mentioned problems. This embodiment differs from the embodiment of FIG. 6 in that the exhaust member 330 for forming the exhaust channel 332 is provided. Hereinafter, the differences will be mainly discussed.

Referring to FIG. 7, an exhaust member 330 is provided in a space between the pair of gas supply modules 300, and the exhaust member 330 has an exhaust channel 332 therein. The exhaust channel 332 forms a passage through which the remaining process gas or purge gas is exhausted. Accordingly, even if evaporation occurs due to the reaction of the process gas exhausted through the exhaust channel 332, the exhaust member 330 is separated to perform the cleaning operation, thereby reducing the time and cost required for reassembling. This is because, when the exhaust member 330 is reassembled, the exhaust member 330 can be closely attached to the adjacent gas supply module 300 and assembled easily.

6 and 7 illustrate a pair of gas supply modules 300 on both sides of the plasma electrode 350 and an exhaust channel 332 between the pair of gas supply modules 300. [ Fig. However, the exhaust channel 332 may be provided before the gas supply along the direction in which the substrate W moves. That is, the exhaust gas may be removed prior to supplying the process gas and / or the purge gas to remove the residual gas on the substrate. 8 shows an example in which the exhaust channel 332 is provided first in the gas supply section along the moving direction of the substrate. Hereinafter, Fig. 8 assumes that the substrate moves from the right side to the left side in the figure when the substrate moves under the gas supply unit.

8, a gas supply module 300 (gas supply module located at the rightmost position in FIG. 8) provided adjacent to the chamber lid 120 is spaced apart from the chamber lid 120 by a predetermined distance, And an exhaust member 330 is provided between the module 300 and the chamber lid 120. As a result, when the substrate moves from right to left, it is possible to exhaust the remaining gas on the surface of the substrate prior to supplying the process gas and / or the purge gas along the moving direction to perform a uniform deposition operation. In the meantime, although the gas supply unit of the present embodiment is shown to include the exhaust member 330 forming the exhaust gas channel 332 at the edge, the exhaust member 330 may be omitted. That is, it goes without saying that the exhaust channel 332 may be formed as a space between the chamber lid 120 and the gas supply module 300. Also, although not shown in the drawings, the exhaust channel may be provided at the end along the moving direction of the substrate.

Hereinafter, a plasma electrode for supplying a plasma during a deposition operation will be described in detail with reference to the drawings.

Referring to FIG. 6, the gas supply unit 200 according to the present embodiment includes two or more gas supply modules 300, and the plasma electrode 350 is provided between the gas supply modules 300.

Specifically, the plasma electrode 350 is supported by the chamber lid 120. That is, the plasma electrode 350 is not supported by the adjacent gas supply module 300 or the cover 205 but is supported by the chamber lead 120. The gas supply module 300 is detachably mounted on the chamber lid 120 and is not suitable for supporting the plasma electrode 350. The cover 205 is removed when the gas supply unit 200 is maintained and repaired. Therefore, if the plasma electrode 350 is supported on the cover 205, it is troublesome to detach the plasma electrode 350. Accordingly, in this embodiment, when the plasma electrode 350 is provided, the plasma electrode 350 is supported by the chamber lid 120.

An electrode supporting part 360 of an insulating material is provided on the chamber lead 120 to support the plasma electrode 350 and the plasma electrode 350 is mounted on the electrode supporting part 360. Although not shown in the drawing, power is supplied to the plasma electrode 350 through the chamber lid 120 and the electrode support 360. At least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode. Preferably, the gas supply modules 300 located on both sides of the plasma electrode 350 are grounded, And serves as a ground electrode.

The cover 205 of the gas supply unit 200 further includes a second supply line 220 for supplying a second process gas for generating plasma. The second process gas is supplied from the second supply line 220 toward the plasma electrode 350. In this case, dispersion means may be provided so that the second process gas is uniformly dispersed around the plasma electrode. The dispersion means may be provided in the plasma electrode 350 and may include a dispersion unit 355 provided in the plasma electrode 350. The dispersion unit 355 is provided in the plasma electrode 350 toward the second supply line 220 to which the second process gas is supplied and serves as a so-called 'diffuser' for dispersing the second process gas.

Specifically, when the cross section of the dispersing unit 355 is viewed, the width of the upper portion is narrower than the width of the lower portion. Thus, a narrow top portion is provided facing the second process gas supply portion such that the second process gas is uniformly distributed to both sides of the plasma electrode 350 along the dispersion portion 355. The dispersion unit 355 may be formed integrally with the plasma electrode 350 or may be formed as a separate member. As a result, a magnetic field is formed between the plasma electrode 350 and the adjacent gas supply module 300 serving as the ground electrode, and the second process gas passes through the magnetic field to become a plasma state to supply radicals toward the lower substrate. do.

Although the plasma electrode 350 is supported by the chamber lid 120 in the above embodiment, the plasma electrode 350 may be supported by the chamber body 130. Figs. 9 and 10 show a configuration in which the plasma electrode 350 is supported by the chamber body 130. Fig. Hereinafter, differences from the above-described embodiment will be mainly described.

FIG. 9 is a perspective view showing a gas supply unit according to another embodiment, and FIG. 10 is a cross-sectional view taken along the line X-X in FIG.

Referring to FIGS. 9 and 10, an electrode support 360 supporting the plasma electrode 350 is connected to the chamber body 130. More specifically, the electrode supporting portion 360 includes a connection portion 362 selectively connected to one side of the chamber body 130, and a support bar 364 supporting the plasma electrode 350 and bent at the connection portion 362 do. The electrode supporting portion 360 is made of an insulating material, which is the same as the above-described embodiment.

The electrode supporting portion 360 is assembled from the outside of the chamber body 130 toward the inside of the chamber 110 or from the inside to the outside of the chamber body 130 as shown in FIG. Therefore, only the connecting portion 362 is visible outside the chamber body 130. The plasma electrode 350 may be previously seated on the support bar 364 when the electrode support 360 is assembled to the chamber body 130. That is, the plasma electrode 350 is mounted on the electrode supporting part 360, and the electrode supporting part 360 is connected to the chamber body 130. Although not shown in the drawing, a gasket or the like may be provided on the contact surface or the like for sealing between the connection portion 362 and the chamber body 130. [ Further, although not shown in the figure, power is supplied to the plasma electrode 350 through the chamber body 130 and the electrode support 360. [ At least one of the gas supply modules 300 adjacent to the plasma electrode 350 is grounded to serve as a ground electrode. Preferably, all of the gas supply modules 300 located on both sides of the plasma electrode 350 are grounded, And serves as an electrode.

As a result, the plasma electrode 350 is said to be supported by the chamber 110, and is specifically supported by the chamber lead 120 or supported by the chamber body 130.

On the other hand, in the above-described embodiment, it is assumed that the substrate transfer unit 180 rotates the substrate W in one direction along a predetermined movement path. However, the thin film deposition apparatus according to the present invention is not limited thereto, and the substrate transfer unit 180 may rotate the substrate W in both directions along the transfer path. For example, when the substrate W is rotated along the movement path, the substrate moving unit 180 changes the rotation direction of the substrate W at a predetermined time interval, or when the substrate W moves along the movement path The rotation direction of the substrate W can be changed. Such a change in the rotational direction of the substrate W may be performed by changing the rotational direction of a motor (not shown) connected to the drive pulley 182 of the substrate transfer unit 180. [ However, if the rotation direction of the substrate W is changed for a predetermined period of time or a predetermined number of rotations, the configuration of the gas supply unit 200 may be different from that of the above embodiment. That is, in the atomic layer deposition method, a thin film can be formed on the substrate W by supplying the first process gas (source gas or source gas) of the disposal to the substrate W and then supplying the second process gas (reaction gas) It is because. Accordingly, the structure of the gas supply unit, which can be applied to a case where the relative movement direction of the substrate W with respect to the gas supply unit is changed for a predetermined time or a predetermined number of rotations, will be described.

11 is a side sectional view showing one embodiment of a gas supply portion that can be applied when the relative movement direction of the substrate W with respect to the gas supply portion is changed.

Referring to FIG. 11, the gas supply unit 2000 according to the present embodiment has a symmetrical structure along the movement path of the substrate W. FIG. That is, since the substrate W is rotated in both directions along the movement path, the gas supply unit 2000 has a symmetrical structure along the movement path of the substrate W, which is advantageous for the deposition of the thin film. That is, since the gas supply part 2000 is symmetrically provided around the central part, the substrate can be deposited on both sides of the substrate in both directions.

In this embodiment, the gas supply unit 2000 includes a first gas supply unit for supplying the first process gas to the center. The first gas supply means includes a first supply line 2110 to which the first process gas is supplied and a first auxiliary channel 2112 to move the first process gas to be supplied toward the substrate W, 2312). Therefore, the gas supply unit 2000 according to the present embodiment is provided symmetrically about the first gas supply means. Hereinafter, a specific configuration of the gas supply unit 2000 will be described with reference to the drawings.

The gas supply part 2000 includes a cover part 2100, a first body part 2300 connected to the cover part 2100 and connected to the upper part of the chamber lead 120, And a second body portion 2500 connected to the plasma electrode 2400 to support the plasma electrode 2400 and to provide an auxiliary exhaust channel 2553.

The cover portion 2100 is connected to a plurality of supply lines to which various gases are supplied and an exhaust line to which residual gas is exhausted. As described above, the first supply line 2110 to which the first process gas is supplied is connected to the substantially central portion. The exhaust line 2150, the purge gas supply line 2120, the second supply line 2130, and the exhaust line 2150 are connected in order from the first supply line 2110 to the right. On the other hand, an exhaust line 2150, a purge gas supply line 2120, a second supply line 2130, and an exhaust line 2150 are symmetrically connected to the left side of the first supply line 2110. The cover part 2100 is also provided with a first auxiliary channel 2112 to which the first process gas supplied from the first supply line 2110 is supplied and an auxiliary exhaust channel 2152 to exhaust the remaining gas to the exhaust line 2150, A purge gas supplementary channel 2122 supplied with the purge gas supplied from the purge gas supply line 2120 and a second auxiliary channel 2132 supplied with the second process gas supplied from the second supply line 2130 do.

Meanwhile, the cover portion 2100 is connected to the first body portion 2300. A first through hole 2102 is formed in the cover part 2100 and a first fastening hole 2302 is formed in the first body part 2300 and connected by bolts or the like. The first body portion 2300 is connected to the upper portion of the chamber lid 120. The first body portion 2300 can be seated along the edge of the opening 122 with the opening 122 in the chamber lid 120 as described above. In this case, a second through hole 2304 may be provided in the first body part 2300 and may be connected to the chamber lead 120 by a bolt or the like.

The first body part 2300 may include a supply channel and an exhaust channel for supplying various gases. Specifically, the first supply channel 2312 communicating with the first auxiliary channel 2112 and supplying the first process gas toward the substrate, and the first exhaust channel 2352 communicating with the auxiliary exhaust channel 2152 to exhaust the remaining gas. ), A purge gas supply channel 2232 communicating with the purge gas auxiliary channel 2122 and supplying a purge gas, and a second supply channel 2332 communicating with the second auxiliary channel 2132 and supplying a second process gas. Equipped. The second exhaust channel 2353 located at the outer periphery of the first body part 2300 is connected to the second body part 2500 to be described later. . Specifically, the length of the second exhaust channel 2353 provided in the first body portion 2300 is shorter than the length of the first exhaust channel 2352.

Meanwhile, the second body part 2500 is connected to the lower part of the first body part 2300. For example, the second body portion 2500 may have a third through hole 2506, and the first body portion 2300 may have a second fastening hole 2306 and may be fastened with a bolt or the like.

The second body part 2500 includes an electrode support part 2510 supporting the plasma electrode 2400 and an auxiliary exhaust channel 2553 communicating with the second exhaust channel 2353. Accordingly, the upper portion of the plasma electrode 2400 is supported by the cover portion 2100, and the lower portion thereof is supported by the electrode supporting portion 2510 of the second body portion 2500. On the other hand, the second process gas is supplied toward the plasma electrode 2400 through the second supply line 2130, the second auxiliary channel 2132, and the second supply channel 2332. In this case, the first body portion 2300 facing the plasma electrode 2400 may serve as a ground electrode.

Meanwhile, the first body part 2300 may further include a dispersing member 2700 for uniformly dispersing the first process gas and the purge gas. A fourth through hole 2702 is provided in the dispersing member 2700 and a third fastening hole 2308 corresponding to the fourth through hole 2702 is formed in the first body portion 2300 and can be connected by the fastening member. FIG. 12 is an enlarged perspective view of the 'A' region of the dispersing member 2700 in FIG.

12, the dispersion member 2700 has a first dispersion channel 2712 that communicates with the first supply channel 2312. [ The first dispersion channel (2712) communicates with the plurality of first dispersion holes (2750). The first process gas moved along the first supply channel 2312 is supplied to the lower substrate W through the first dispersion channel 2712 and the first dispersion hole 2750. [ In this case, the first process gas is uniformly dispersed and supplied through the plurality of first dispersion holes 2750.

The dispersing member 2700 also has a second dispersion channel 2722 in communication with the purge gas supply channel 2322. The second dispersion channel (2722) communicates with the plurality of second dispersion holes (2740). The purge gas moved along the purge gas supply channel 2322 is supplied to the lower substrate W through the second dispersion channel 2722 and the second dispersion hole 2740. [ In this case, the first process gas is uniformly dispersed and supplied through the plurality of second dispersion holes 2740.

On the other hand, the dispersing member 2700 is configured not to cover the lower portion of the second supply channel 2332 and the plasma electrode 2400. This is because it is preferable that the radicals are supplied without passing through the dispersion member 2700 when the radical is supplied by the plasma electrode 2400.

Hereinafter, a control method of performing the deposition process by the thin film deposition apparatus having the above configuration will be described in detail with reference to the accompanying drawings. FIG. 13 is a plan view schematically illustrating a chamber 110 having a substrate W and a gas supply unit 200 in FIG. 2. In FIG. 13, as an example, 10 substrates and three pairs of gas supply units 200 are provided. Hereinafter, a description will be given assuming a configuration of the substrate and the gas supply unit according to FIG. 13 when describing the control method, but the present invention is not limited thereto.

Further, as described above, the substrate W is moved along a predetermined menopause path, and the menopausal path is divided into a pair of straight path L, which are arranged in parallel and spaced apart from each other by a predetermined distance, And a pair of curved paths (C). In this case, the gas supply unit 200 is provided with at least one pair, and are paired one by one and are provided symmetrically along the pair of straight paths (L). Here, the meaning of 'a pair of gas supply units are symmetrically provided along a pair of straight path' means the following. That is, when the gas supply unit 'A' and 'D' are paired in FIG. 13, when the gas supply unit A is disposed along one straight path (the upper straight path in the drawing), the gas supply unit D It is arranged along one straight path (the lower straight path in the figure) symmetrically with respect to the center part. A pair of forming gas supply units 'B' and 'E', or another pair of forming gas supply units 'C' and 'F' are similarly arranged. As a result, if any one of the pair of gas supply portions is disposed in one straight path, the remaining one gas supply portion is disposed in a different straight path symmetrically with respect to the central portion of the menopause.

In the following description, 'source gas' refers to a first process gas or a source gas, and 'plasma supply' refers to supplying a second process gas or a reaction gas toward the plasma electrode 350 to supply radicals toward the substrate . Hereinafter, a control method of the thin film deposition apparatus will be described in detail with reference to FIGS. 13 to 13. The control method described below can be performed by a control unit (not shown) that controls each component of the above-described thin film deposition apparatus.

The thickness of the thin film formed on the surface of the substrate W when the thin film is formed on the substrate surface by the thin film deposition apparatus is proportional to the number of times the thin film is passed through the gas supply unit 200. [ Accordingly, unlike FIG. 13, if the distance between neighboring gas supply units is the same, the position of the substrate may be any position at the end of the deposition process. This is because the number of times that the substrate passes through the gas supply unit is the same for each substrate. However, in the thin film deposition apparatus according to the present invention, the substrate moves along a closed path formed by a pair of straight paths and curved paths, and the gas supply unit is disposed along the straight paths except for the curved paths. That is, the distances between the gas supply units 200 along the movement path of the substrate are not equal to each other. Therefore, the number of times the substrate W is passed through the gas supply part 200 may vary depending on whether the substrate W is located in a straight path or a curved path at the time when the deposition process is completed.

In order to solve the above problems, the substrate W is positioned at a predetermined position on the closed path at the beginning and at the end of the deposition process, or at a predetermined starting position on the closed path at the start of the deposition process. At the end of the process can be located at the end position facing the above-described start position along the closed route.

For example, when the substrate W is located at the same position on the closed path at the start and end of the deposition process, the substrate W is located at the position of the substrate 1 at the start of the deposition process, and the deposition process is completed. In this case, it may be defined as a case in which the position of the substrate once again. The number of times that each substrate passes through the gas supply unit is 6, 12, 18, 24, etc., when the substrate is rotated in a single unit as in the case where the deposition process starts at the first position and ends at the first position again. And the same is true for a substrate located at another position. In this embodiment, since the total number of gas supply units is six, the number of times the substrate passes through the gas supply unit is increased by a multiple of six, which is the number of the total gas supply unit. As a result, all the substrates pass through the gas supply part the same number of times after the completion of the deposition process, so that the thickness of the thin film formed on each substrate becomes constant.

On the other hand, when a plurality of substrates W are located at a predetermined starting position on the menopause path at the start of the deposition process and are located at the end position facing the above-described starting position along the menopause path at the end of the deposition process, Can be explained as follows. For example, in Figure 13 it is located at the position of substrate 1 at the beginning of the deposition process, and facing the position of substrate 1 at the end of the deposition process (i.e., symmetrically located at the center of the closed path). 6 may be located at the position of the substrate. That is, when the deposition process starts at a predetermined starting position and ends at the end position opposed to the menopause, the number of times each substrate passes through the gas supply unit is equal to the total number of gas supply units 3, 9, 15, And the same is true for the other positioned substrates. However, there is a difference in that the gas supply unit passes three times when the first and second rotational positions are rotated in the first half compared with the case where the start position and the end position are the same. In this case as well, all the substrates pass through the gas supply part the same number of times after the end of the deposition process, so that the thickness of the thin film formed on each substrate becomes constant.

On the other hand, in the case of depositing a thin film on a substrate, the thickness of the thin film can be changed even in one substrate. For example, when the deposition process is terminated while one substrate is passing through the gas supply unit, the substrate region past the gas supply unit is deposited and the region not yet passing through the gas supply unit is not deposited. The thickness of the thin film may vary.

In order to solve the above problems, the distance between the gas supply units 200 disposed on the straight path in the thin film deposition apparatus 100 according to the present embodiment may be disposed beyond the diameter of the substrate W, and the deposition process At the start and at the end of the substrate may be located in the space between the gas supply unit 200. That is, the substrate W is positioned so as not to overlap with the gas supply unit 200 at the start and end of the deposition process. As described above, when the substrate W is positioned between the adjacent gas supply units at the beginning and the end of the deposition process, it is possible to prevent partial deposition on one substrate by the gas supply unit 200 do. Therefore, it is possible to prevent the thickness of the thin film from changing in one substrate, thereby obtaining a uniform thin film.

On the other hand, when a plurality of gas supply units are provided as in the above-described thin film deposition apparatus, the thickness of the thin film formed on each substrate can be maintained uniform by appropriately adjusting the source gas and the plasma supply of the gas supply unit. Hereinafter, the present invention will be described with reference to the drawings.

14 and 15 are graphs illustrating a control method of a thin film deposition apparatus according to another embodiment, and specifically, a control method of a gas supply unit of the thin film deposition apparatus. In FIG. 14 and FIG. 15, the horizontal axis means time t, and the vertical axis indicates whether plasma and source gas are supplied from each gas supply unit A to F. In FIG. 14 and 15 illustrate a case where the plasma and the source gas are supplied together from each gas supply unit 200 and terminated together. Hereinafter, a control method according to the present embodiment will be described in detail with reference to the drawings.

14 and 15, the control method according to the present embodiment includes one or more pairs of gas supply units symmetrically provided along a pair of straight paths at the end of the deposition process along the rotational direction of the substrate W. FIG. The plasma and source gas supply will be sequentially terminated.

Specifically, it is assumed that the substrate W rotates counterclockwise in the thin film deposition apparatus having the configuration as shown in FIG. 13. As shown in FIG. 14 and FIG. 15, when the deposition process is completed, a pair of gas supply units 'A' and 'D' first finish supplying plasma and source gas, and then rotate the direction of rotation of the substrate W. Accordingly, a pair of gas supply units 'B' and 'E' sequentially terminate supply of plasma and source gas, and finally, a pair of gas supply units 'C' and 'F' terminate supply of plasma and source gas. do. That is, at the end of the deposition termination, the pair of gas supply parts 200 symmetrically provided along the pair of linear paths sequentially terminates the plasma and source gas supply. In this way, at the end of the deposition process, the pair of gas supply portions symmetrically arranged along the pair of linear paths are sequentially supplied with the plasma and the source gas along the rotation direction of the substrate, The number of times of deposition by the gas supply unit can be kept constant within a predetermined range.

Meanwhile, in FIG. 14 and FIG. 15, the driving of each gas supply unit is the same at the end of the deposition process, but the driving of each gas supply unit may be different at the start of the deposition process. That is, as shown in FIG. 14, at least one pair of gas supply units 200 may simultaneously supply the plasma and the source gas at the start of the deposition process. In this case, at the same time as the start of the deposition process or at a predetermined time, all the gas supply units 200 supply the plasma and the source gas at substantially the same time.

Alternatively, as shown in FIG. 15, at least one pair of gas supply units symmetrically provided along a pair of straight paths at the start of the deposition process may sequentially start supplying plasma and source gas along the rotational direction of the substrate. have. That is, the pair of gas supply units 'A' and 'D' start supplying plasma and source gases first, and then sequentially form a pair of gas supply units 'B' and 'E' 'Starts to supply plasma and source gases, and finally the pair of gas supplies' C' and 'F' begin to supply the plasma and source gas. In the control method according to FIG. 15, a pair of gas supply units sequentially start or stop driving at the beginning and the end of the deposition process, so that the number of depositions by the gas supply unit for each substrate is fixed within a narrower range. I can keep it.

16 and 17 illustrate a control method according to another embodiment.

16 and 17, at the start of the deposition process, the gas supply unit simultaneously supplies any one of the plasma and the source gas, and the gas supply unit sequentially supplies the other one along the rotational direction of the substrate. .

Specifically, referring to FIG. 16, at least one pair of gas supply units supply plasma simultaneously at the start of the deposition process. Further, the gas supply unit is sequentially driven from A to F along the rotation direction of the substrate to supply the source gas. On the other hand, FIG. 17, on the contrary, at least one pair of gas supply units supply the source gas at the start of the deposition process. In addition, the gas supply unit sequentially drives A to F along the rotation direction of the substrate to supply the plasma.

That is, in the present embodiment, at the same time as the start of the deposition process or at a predetermined time, all of the gas supply units 200 supply one of the plasma and the source gas, and the other one of the gas supply units along the rotational direction of the substrate. It is driven and supplied sequentially.

On the other hand, at the end of the deposition process in this embodiment, the gas supply unit is to terminate the supply of the plasma and source gas sequentially in the rotational direction of the substrate. That is, when the deposition process is terminated, the gas supply unit sequentially terminates the supply of the plasma and the source gas from A to F along the rotation direction of the substrate.

As a result, according to the control method of FIG. 16 and FIG. 17, plasma and source gas supply by the gas supply unit are sequentially terminated along the rotational direction of the substrate so that the number of depositions by the gas supply unit for each substrate is fixed within a predetermined range. I can keep it. Further, even when the gas supply by the gas supply unit is started, at least one gas is sequentially supplied along the rotation direction of the substrate, so that the number of times of deposition by the gas supply unit can be kept constant within a narrower range.

18 shows a control method according to another embodiment.

Referring to FIG. 18, in the present embodiment, an inert gas such as argon (Ar) gas is supplied as a purge gas through a second supply line 220 that supplies a second process gas toward the plasma electrode, and then to the plasma electrode. Power is supplied to the 350 and a reaction gas such as O ₂ is supplied to the plasma electrode.

This can impart stability of the process by discharging using an inert gas which discharges well even at low initial voltage. In addition, since the reactive gas such as O ₂ is supplied to the already discharged plasma space, there is no initial instability and a uniform plasma can be maintained even during a long process time, thereby producing a stable and uniform thin film. Although not shown in the drawings, the inert gas supply can be stopped after the reactive gas is supplied to the plasma electrode 350. This is because it is not necessary to continuously supply the inert gas since the inside of the chamber 110 has already been filled with the inert gas.

On the other hand, in the control method according to the above-described embodiments, the position of the substrate at the beginning and the end of the deposition process, or the plasma and source gas supply by the gas supply unit are important factors. This is because the thickness of each substrate is determined according to the number of times each substrate passes through the gas supply unit or whether plasma or source gas is supplied. However, when the thin film required for the substrate is required to have a relatively thick thickness of not less than a predetermined thickness, the start position and the end position of the substrate as described above may not be important. This is because the difference in thickness of the thin film caused by the difference in the number of times passing through the gas supply unit is negligibly smaller than the thickness of the entire thin film. On the contrary, when a thin film having a relatively thin thickness of less than a predetermined thickness is required for the substrate, the difference in the thickness of the thin film caused by the difference in the number of times the substrate passes through the gas supply unit serves as an important factor.

As a result, the control method according to the above-described embodiments can be applied to the latter case, that is, when the thin film required for the substrate is thinner than a predetermined thickness and a relatively thin film is required. For example, when the thickness of a thin film required for a substrate is approximately several tens of angstroms, a relatively thin film is required, and thus a control method according to the present invention is required. However, in order to always apply the above-described control method in the case where such a thin film is required, it is necessary to control the position of the substrate of the thin-film deposition apparatus or the gas supply unit with very precise control. This may require a very precise program for controlling the thin film deposition apparatus, which can act as a factor for raising the unit cost of the thin film deposition apparatus. Therefore, a control method which does not require precise control of the thin film deposition apparatus will be described below.

19 shows a control method according to another embodiment for solving the above problem.

Referring to FIG. 19, in the present exemplary embodiment, the substrate is deposited by the respective gas supply units 200 in a preliminary step (S110) and each gas supply unit 200 has a predetermined first thickness. And a termination step (S150) of depositing the substrate to a predetermined first thickness or less by the deposition step (S130) for depositing the gas and each gas supply unit (200). That is, when the thickness of the thin film deposited on the substrate in the deposition process is one time, the thickness of the thin film deposited on the substrate is defined as a first thickness, And a preliminary process and a termination process for controlling the preliminary process.

For example, when each substrate passes through the gas supply part in the deposition process, the thickness of the thin film deposited on the substrate is 1 Å, and the thickness of the thin film is less than 1 Å in the preliminary process and the end process. Here, the term 'controlling the gas supply unit' is used to mean that the thickness of the thin film deposited on the lower substrate is controlled by controlling the source gas and the plasma supply supplied from the gas supply unit. For example, in the deposition process, the amount of the source gas and the plasma supplied by the gas supply unit is controlled so that the thickness of the thin film deposited on the substrate becomes 1 mm when each substrate passes the gas supply unit once. Here, the amounts of the source gas and the plasma supplied by the gas supply unit are not limited to specific values. This is because it depends on the configuration of the gas supply part, that is, the size of the substrate together with the number of the gas supply module 300 and the plasma electrode 350 provided in the gas supply part.

Meanwhile, in the present exemplary embodiment, the gas supply unit is controlled to increase the deposition thickness of the substrate in the preliminary process from a predetermined second thickness to a predetermined inclination to reach the first thickness, and the deposition thickness of the substrate is controlled in the finishing process. The gas supply unit is controlled to decrease from one thickness to a predetermined third thickness by a predetermined slope. Here, the second thickness and the third thickness may be the same, for example, as shown in FIG. 19, the second thickness and the third thickness may be 0.1 mm 3.

That is, when the preliminary process is started, the substrate moves along the movement path, and the gas supply unit is controlled so that the thickness of the thin film deposited on the substrate gradually increases from the second thickness. Then, when the substrate passes through the gas supply part once, and the thickness of the thin film to be deposited reaches a predetermined first thickness, the deposition process is started, and the rate at which the substrate moves also reaches the first rate .

In the deposition process, when the substrate passes the gas supply unit once, a thin film having a first thickness is deposited on each substrate. In addition, in the deposition process, the substrate moves along the movement path at a predetermined speed. In the deposition process, the substrate is rotated a predetermined number of times along the moving path (or closed path) for a predetermined time by the thickness of the thin film required for the substrate. When the number of rotations is calculated, the thickness of the thin film formed on the substrate may be calculated in the above-described preliminary process and the termination process described later to calculate the number of times required in the deposition process. In this case, it is calculated by reflecting the size of the substrate, the number of gas supply units, and the like.

And the termination step is performed when the substrate is rotated by the number of revolutions required during the deposition process. In the finishing step, the above-described preliminary process is carried out upside down. That is, the gas supply unit is controlled while the substrate moves along the movement path to control the gas supply unit so that the thickness of the thin film deposited on the substrate gradually decreases from the first thickness. Then, when the substrate passes through the gas supply part once, the termination process is terminated when the thickness of the thin film to be deposited reaches a predetermined third thickness.

Meanwhile, the preliminary process and the end process may be performed while the substrate rotates a predetermined number of times along the menopausal path, for example, while the substrate is rotated 10 times.

As a result, in the preliminary process and the end process described above, the thickness of the thin film deposited when the substrate passes through each gas supply unit is much smaller than the deposition process in which the deposition process is performed in earnest. Therefore, even if there is a difference in the number of times each substrate passes through the gas supply unit in the preliminary process and the end process, the thickness of the thin film caused by the difference becomes extremely small. Therefore, in this embodiment, the position of the substrate does not act as an important factor in the preliminary process and the end process.

Further, since the control method according to the present embodiment does not act as an important factor in the position of the substrate, there are cases in which a thin film required for the substrate is relatively thick, such as a predetermined thickness or more, It can be applied to a case where a relatively thin film is required.

100 ... Thin Film Deposition Device 110 ... Chamber
120 ... chamber lead 130 ... chamber body
140 ... substrate receiving portion 142 ... receiving pin
144 ... driving part 150 .... substrate supporting part
152 ... susceptor 154 ... connection
156 ... bottom support portion 158 ... roller
160 ... guide portion 170 ... heating portion
180 < SEP >
184 .... driven pulley 190 ... belt
200 ... gas supply unit 205 ... cover
210 ... first supply line 212 ... supply channel
220 ... second supply line 230 ... exhaust line
300 ... gas supply module 315 ... limited portion
330 ... exhaust member 332 ... exhaust channel
350 ... Plasma electrode 355 ... dispersion part
360 ... Electrode supporter 600 ... Substrate inlet /
610 ... second robot arm 700 ... load lock chamber
810, 820 ... boat 1000 ... substrate processing apparatus

Claims (13)

delete delete delete delete delete delete delete delete delete In the thin film forming method for forming a thin film on the substrate including a plurality of substrates moving along the closed path, the plurality of gas supply unit is provided along the closed path to supply the source gas and the plasma,
A preliminary step of depositing the substrate to a first thickness or less by the respective gas supply units;
A deposition step of depositing the substrate to the first thickness by the gas supply units; And
And an end step of depositing the substrate to the first thickness or less by the respective gas supply parts. 11. The method of claim 10,
And in the preliminary step, increasing the deposition thickness of the substrate from a second thickness to the first thickness. 11. The method of claim 10,
And the deposition thickness of the substrate is reduced from the first thickness to a third thickness in the terminating step. 11. The method of claim 10,
And the preliminary process and the terminating process are performed while the substrate is rotated a predetermined number of times along the closed path.

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