KR101304622B1 - Cleaning solution - Google Patents
Cleaning solution Download PDFInfo
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- KR101304622B1 KR101304622B1 KR1020060082367A KR20060082367A KR101304622B1 KR 101304622 B1 KR101304622 B1 KR 101304622B1 KR 1020060082367 A KR1020060082367 A KR 1020060082367A KR 20060082367 A KR20060082367 A KR 20060082367A KR 101304622 B1 KR101304622 B1 KR 101304622B1
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- South Korea
- Prior art keywords
- cleaning composition
- cleaning
- weight
- surfactant
- reducing agent
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- 238000004140 cleaning Methods 0.000 title claims abstract description 74
- 239000000203 mixture Substances 0.000 claims abstract description 51
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000003638 chemical reducing agent Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 14
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 8
- 239000003599 detergent Substances 0.000 claims description 8
- 239000002736 nonionic surfactant Substances 0.000 claims description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 5
- 229940035024 thioglycerol Drugs 0.000 claims description 5
- 239000011668 ascorbic acid Substances 0.000 claims description 4
- 235000010323 ascorbic acid Nutrition 0.000 claims description 4
- 229960005070 ascorbic acid Drugs 0.000 claims description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000003945 anionic surfactant Substances 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 claims description 2
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 claims description 2
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 4
- -1 carboxylate salts Chemical class 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000005260 corrosion Methods 0.000 description 18
- 230000007797 corrosion Effects 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000356 contaminant Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910019142 PO4 Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 235000021317 phosphate Nutrition 0.000 description 5
- 229920000056 polyoxyethylene ether Polymers 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 239000012459 cleaning agent Substances 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Natural products O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 150000008054 sulfonate salts Chemical class 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical class OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 150000002314 glycerols Chemical class 0.000 description 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 229940117986 sulfobetaine Drugs 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/88—Ampholytes; Electroneutral compounds
- C11D1/94—Mixtures with anionic, cationic or non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/16—Metals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은, 알루미늄 또는 알루미늄을 포함하고 있는 합금이 노출되어 있는 표면을 세정하는 세정제 조성물을 제공한다. 본 발명의 세정제 조성물은 반도체소자, 또는 액정소자, PDP, 유기발광소자 등의 평판 디스플레이 기판을 세정하는데 이용될 수 있다. This invention provides the cleaning composition which wash | cleans the surface by which aluminum or the alloy containing aluminum is exposed. The cleaning composition of the present invention can be used to clean flat panel display substrates such as semiconductor devices, liquid crystal devices, PDPs, organic light emitting devices, and the like.
세정제, 평판디스플레이 Cleaner, Flat Panel Display
Description
본 발명은 알루미늄 또는 알루미늄을 포함하고 있는 합금이 노출되어 있는 표면을 세정하는 세정제 조성물에 관한 것이다. 보다 상세하게는, 알루미늄 및 알루미늄 합금에 대해 부식성이 없고, 유무기 오염물 및 파티클 등의 제거에 적합한 세정제 조성물과 이를 이용한 세정 방법에 관한 것이다. The present invention relates to a cleaning composition for cleaning a surface on which aluminum or an alloy containing aluminum is exposed. More particularly, the present invention relates to a cleaning composition which is not corrosive to aluminum and an aluminum alloy and is suitable for removing organic inorganic contaminants, particles, and the like, and a cleaning method using the same.
반도체 소자나 액정 디스플레이로 대표되는 평판 디스플레이(Flat Panel Display, FPD)소자는, 성막, 노광, 배선, 에칭 등의 공정을 거쳐 제조되는데, 이러한 공정 중, 각종의 유기물이나 무기물 등의 오염물이나 파티클이 기판 표면에 부착하여 오염이 발생한다. 이러한 오염물이 부착되어 있는 채, 후속 공정을 실시했을 경우, 막의 핀홀이나 피트, 배선의 단선이나 브릿지(Bridge) 등을 발생시켜, 제품의 수율을 저하시킨다.Flat panel display (FPD) devices, which are represented by semiconductor devices or liquid crystal displays, are manufactured through processes such as film formation, exposure, wiring, and etching, and during this process, contaminants and particles such as various organic materials and inorganic materials are generated. Adherence to the substrate surface results in contamination. If such a contaminant is attached and the subsequent process is performed, pinholes or pits of the film, disconnection of wires, bridges, or the like are generated, thereby lowering the yield of the product.
현재기판을 세정하기 위해 널리 사용되는 세정방법에서는 제4급암모늄염 예를 들면, 수산화테트라메틸암모늄(TMAH), 또는 수산화트리메틸(2-히드록시에틸)암모늄 등을 0.1~20중량%로 사용하는데, 상기 세정방법은 유무기 오염물 제거나 파티클 제거에는 어느 정도 효과가 있지만, 기판 상에 형성되어 있는 게이트 전극 및 소스/드레인 전극을 형성하는 알루미늄 혹은 알루미늄 합금 배선에 치명적인 부식현상을 발생시켜 소자 제조 공정의 전체적인 수율 저하 및 액정표시소자의 신뢰성을 저하시키는 등의 많은 문제점이 있다.상기와 같은 문제를 해결하기 위하여, 여러가지 세정제 조성물이 제안이 되고 있다.예를 들면, 일본 공개 특허2002-69495에는, 금속을 부식시키지 않는 세정제 조성물로서 환원제를 포함한 세정제 조성물이 제안되어 있다. 그렇지만, 이 특허는 상기 세정제 조성물이 적용되는 금속을 Cu로 한정하고 있으며, 알루미늄 등의 금속에 관한 효과는 전혀 있지 않다. In the cleaning method widely used to clean the current substrate, a quaternary ammonium salt such as tetramethylammonium hydroxide (TMAH) or trimethyl (2-hydroxyethyl) ammonium hydroxide is used at 0.1 to 20% by weight. Although the cleaning method has some effects on the removal of organic and inorganic contaminants and particles, it causes fatal corrosion on the aluminum or aluminum alloy wirings forming the gate electrode and the source / drain electrode formed on the substrate. There are many problems, such as lowering of the overall yield and lowering the reliability of the liquid crystal display device. In order to solve the problems described above, various cleaning compositions have been proposed. For example, Japanese Unexamined Patent Application Publication No. 2002-69495 As a cleaning composition which does not corrode, a cleaning composition containing a reducing agent has been proposed. However, this patent restricts the metal to which the said cleaning composition is applied to Cu, and has no effect with respect to metals, such as aluminum.
본 발명은, 알루미늄 또는 알루미늄을 포함하고 있는 합금이 노출되어 있는 표면을 세정하는 세정제 조성물로서, 유무기오염물이나 파티클 제거에 적합한 동시에, 알루미늄 혹은 알루미늄 합금 배선을 부식시키지 않는 세정제 조성물을 제공하는 것을 그 목적으로 한다.The present invention provides a cleaning composition for cleaning an exposed surface of aluminum or an alloy containing aluminum, which is suitable for removing organic contaminants and particles, and which does not corrode aluminum or aluminum alloy wiring. The purpose.
이에 상기 목적을 달성하기 위하여, 세정력이 우수한 알칼리성 화합물과 부식의 발생을 억제하는 환원제를 사용하여, 세정력이 우수한 동시에 알루미늄 혹은 알루미늄 합금 배선을 부식시키지 않는 세정제을 개발하여 본 발명을 완성하였다.In order to achieve the above object, the present invention has been developed by using an alkaline compound having excellent cleaning power and a reducing agent which suppresses the occurrence of corrosion, and developing a cleaning agent having excellent cleaning power and not corroding aluminum or aluminum alloy wiring.
본 발명은 알루미늄 또는 알루미늄을 포함한 합금이 노출되어 있는 표면을 세정하는 세정제 조성물로서, 알칼리성 화합물 및 환원제를 포함하며, 세정제 조성물 내 환원제의 함량(중량%)이 알칼리성 화합물의 함량(중량%)보다 높은 것을 특징으로 한다.The present invention is a cleaning composition for cleaning the surface exposed to aluminum or an alloy containing aluminum, comprising an alkaline compound and a reducing agent, the content (wt%) of the reducing agent in the cleaning composition is higher than the content (wt%) of the alkaline compound It is characterized by.
이하, 본 발명에 대해 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 세정제 조성물 내 알칼리성 화합물은 대기 중의 유무기 오염물이나 파티클을 제거하는데 탁월한 성능을 나타내며, 환원제는 금속의 부식을 억제하는 역할을 한다The alkaline compound in the cleaning composition of the present invention exhibits excellent performance in removing organic-inorganic contaminants and particles, and a reducing agent serves to suppress corrosion of metals.
세정제 조성물 중의 환원제의 중량%농도 A와 알칼리성 화합물의 중량%농도 B의 비 A/B는 1.1 이상이 바람직하며, 2 이상인 것이 보다 바람직하다. 이는 A/B가 1.1 미만일 경우 금속의 부식이 발생할 가능성이 있기 때문이다.The ratio A / B of the weight% concentration A of the reducing agent in the cleaning composition to the weight% concentration B of the alkaline compound is preferably 1.1 or more, more preferably 2 or more. This is because corrosion of metal may occur when A / B is less than 1.1.
본 발명의 세정제 조성물은 알칼리성 화합물 0.05~2 중량%, 환원제 0.1~5 중량% 및 잔량의 물을 포함하며, 환원제의 함량이 알칼리성 화합물의 함량보다 높은 것을 특징으로 한다.The detergent composition of the present invention comprises an alkaline compound of 0.05 to 2% by weight, a reducing agent of 0.1 to 5% by weight and the residual amount of water, characterized in that the content of the reducing agent is higher than the content of the alkaline compound.
알칼리성 화합물의 함량은 세정제 조성물 총 중량 중 0.05~2 중량%, 바람직하게는 0.1~1 중량% 이다. 이는, 만일 알칼리성 화합물의 함량이 0.05 중량% 미만이면 세정력이 현저히 낮아지며, 2 중량%를 초과하면 금속의 부식이 상당히 증가하기 때문이다. 상기 알칼리성 화합물은, 모노 에탄올 아민, 모노 이소프로필 아민, 하이드록실 아민, 암모니아수, 테트라메틸암모늄 하이드록사이드 및 이들의 혼합물로 이루어진 군으로부터 선택된 것을 포함하며, 바람직하게는 테트라메틸 암모늄 하이드록사이드이다.The content of the alkaline compound is 0.05 to 2% by weight, preferably 0.1 to 1% by weight of the total weight of the detergent composition. This is because if the content of the alkaline compound is less than 0.05% by weight, the cleaning power is significantly lowered, and if it exceeds 2% by weight, the corrosion of the metal is significantly increased. The alkaline compound includes one selected from the group consisting of mono ethanol amine, mono isopropyl amine, hydroxyl amine, ammonia water, tetramethylammonium hydroxide and mixtures thereof, preferably tetramethyl ammonium hydroxide.
상기 환원제는 금속의 부식을 방지하는 역할을 하며, 환원제의 함량은 세정제 조성물 총 중량 중 0.1~5 중량%, 바람직하게는 1~3 중량% 이다. 만일 환원제의 함량이 0.1 중량% 미만이면 금속의 부식이 발생하며, 5 중량%를 초과하면 세정력을 저하시킬 수 있다. 환원제의 구체적인 예로는 티오글리콜(Thioglycol), 티오글리세롤(thioglycerol), 티오글리콜산(Thioglycolic acid), 티오디아세트산(Thiodiacetic acid), 티오아세트산(thioacetic acid), 티오디에탄올(thiodiethanol), 아스코르빅산, 포름산, 옥살산 또는 이들의 혼합물이 있으며, 바람직하게는 티오글리세롤 또는 아스코르빅산을 단독으로 또는 혼합하여 사용한다.The reducing agent serves to prevent corrosion of the metal, the content of the reducing agent is 0.1 to 5% by weight, preferably 1 to 3% by weight of the total weight of the cleaning composition. If the content of the reducing agent is less than 0.1% by weight of the corrosion of the metal occurs, if it exceeds 5% by weight can reduce the cleaning power. Specific examples of reducing agents include thioglycol, thioglycerol, thioglycolic acid, thiodiacetic acid, thioacetic acid, thiodiethanol, and ascorbic acid. , Formic acid, oxalic acid or mixtures thereof, preferably thioglycerol or ascorbic acid are used alone or in combination.
또한, 본 발명에 따른 세정제 조성물은 계면활성제를 추가로 포함할 수 있다. 계면활성제는 금속 표면을 세정할 때 표면에 세정제 조성물이 닿는 접촉각을 낮추어 세정 속도를 향상시키는 역할을 한다. 계면활성제의 함량은 세정제 조성물 총 중량 중 0.0001~1 중량%, 바람직하게는 0.01~0.5 중량% 이다. 만일 계면활성제의 함량이 0.0001 중량% 미만이면 세정 속도를 향상시킬 수 없으며, 1 중량%를 초과하면 다량의 거품이 발생하게 되기 때문이다. In addition, the detergent composition according to the present invention may further include a surfactant. The surfactant serves to improve the cleaning speed by lowering the contact angle at which the cleaning composition comes into contact with the surface of the metal. The content of the surfactant is 0.0001 to 1% by weight, preferably 0.01 to 0.5% by weight of the total weight of the detergent composition. If the content of the surfactant is less than 0.0001% by weight it is not possible to improve the cleaning rate, if it exceeds 1% by weight because a large amount of foam is generated.
상기 계면활성제는 음이온계 계면활성제, 비이온계 계면활성제 또는 불소계 계면활성제를 단독으로 사용하거나 2종 이상을 혼합하여 사용할 수 있으며, 특히 비이온계 계면활성제가 바람직하다.The surfactant may be used alone or in combination of two or more kinds of anionic surfactants, nonionic surfactants or fluorine-based surfactants, and particularly preferably nonionic surfactants.
상기 음이온계 계면활성제의 구체적인 예로는, 고급지방산 알칼리염(비누), N-아크릴아미노산염, 알킬에테르 카르복시산염 및 아실화펩티트 설폰산염와 같은 카르복시산염; 알킬설폰산염, 알킬벤젠 및 알킬아미노산염; 알킬나프탈렌 설폰산염, 및 설포호박산염과 같은 설폰산염; 황산화유, 알킬황산염, 알킬에테르황산염, 알킬아릴에테르황산염 및 알킬아미드황산염과 같은 황산에스테르염; 및 알킬인산 염, 알킬에테르인산염 및 알킬아릴에테르인산염과 같은 인산에스테르염이 있다.Specific examples of the anionic surfactants include carboxylate salts such as higher fatty acid alkali salts (soaps), N-acrylic amino acid salts, alkyl ether carboxylates, and acylated peptide sulfonates; Alkyl sulfonates, alkylbenzenes and alkylamino acid salts; Sulfonate salts such as alkylnaphthalene sulfonate salts, and sulfobacter acid salts; Sulfate ester salts such as sulfated oil, alkyl sulfate, alkyl ether sulfate, alkylaryl ether sulfate and alkylamide sulfate; And phosphate ester salts such as alkyl phosphates, alkyl ether phosphates and alkyl aryl ether phosphates.
상기 비이온계 계면활성제는 수용액에서 이온으로 해리하는 기를 가지고 있지 않는 계면활성제로서, -OH기를 가지고 있다. 비교적 친수성은 작지만 분자내에 에스테르, 산아미드, 에테르 결합을 갖고 있다. 비이온 계면활성제의 구체적인 예로는, 알킬 및 알킬아릴 폴리옥시에틸렌에테르, 알킬아릴포름알데히드 축합 폴리옥시에틸렌 에테르 및 폴리옥시프로필렌을 친유기로 하는 블록폴리머와 같은 에테르형; 글리세린에스테르의 폴리옥시에틸렌에테르, 솔비탄 에스테르의 폴리옥시에틸렌에테르, 및 솔비톨 에스테르의 폴리옥시에틸렌에테르와 같은 에스테르에테르형; 폴리에틸렌글리콜지방산에스테르, 글리세린에스테르, 솔비탄에스테르, 프로필렌 글리콜에스테르, 슈가에스테르 및 알킬 폴리 글루코시드와 같은 에스테르형; 및 지방산알카놀아미드, 폴리옥시에틸렌지방산아미드, 폴리옥시에틸렌알킬아민, 및 아민 옥사이드와 같은 함질소형이 있다.The nonionic surfactant is a surfactant which does not have a group dissociated into ions in an aqueous solution, and has a -OH group. Although relatively hydrophilic, the molecule has ester, acid amide, and ether linkages. Specific examples of nonionic surfactants include ether type such as alkyl and alkylaryl polyoxyethylene ethers, alkylaryl formaldehyde condensed polyoxyethylene ethers and block polymers having polyoxypropylene as a lipophilic; Ester ether types such as polyoxyethylene ether of glycerin ester, polyoxyethylene ether of sorbitan ester, and polyoxyethylene ether of sorbitol ester; Ester types such as polyethylene glycol fatty acid esters, glycerin esters, sorbitan esters, propylene glycol esters, sugar esters and alkyl polyglucosides; And nitrogen-containing types such as fatty acid alkanolamides, polyoxyethylene fatty acid amides, polyoxyethylene alkylamines, and amine oxides.
상기 불소계 계면활성제의 구체적인 예로는, 과불소알킬 카르복시산염, 과불소알킬 설폰산염, 과불소알킬 황산염, 및 과불소알킬 인산염과 같은 음이온계; 과불소 알킬 아민염, 및 과불소알킬 4급화 암모늄염과 같은 양이온계; 과불소알킬 카르복시 베타인, 및 과불소알킬 설포베타인과 같은 양쪽성 이온계; 및 불소화알킬 폴리옥시에틸렌, 및 과불소알콜 폴리옥시에틸렌과 같은 비이온계 계면활성제가 있다.Specific examples of the fluorine-based surfactant include anionics such as perfluoroalkyl carboxylate, perfluoroalkyl sulfonate, perfluoroalkyl sulfate, and perfluoroalkyl phosphate; Cationic systems such as perfluoroalkyl amine salts, and perfluoroalkyl quaternized ammonium salts; Amphoteric ionic systems such as perfluoroalkyl carboxy betaine, and perfluoroalkyl sulfobetaine; And nonionic surfactants such as fluorinated alkyl polyoxyethylene, and perfluoroalcohol polyoxyethylene.
본 발명에 따른 세정제 조성물을 사용하는 세정방법은 특별히 한정되지 않으며, 침지 세정법, 요동 세정법, 초음파 세정법, 샤워·스프레이 세정법, 퍼들 세정 법, 브러쉬 세정법, 또는 교반 세정법 등이 이용될 수 있는데, 특히 침지 세정법 또는 초음파 세정법이 바람직하다.The cleaning method using the cleaning composition according to the present invention is not particularly limited, and an immersion cleaning method, a rocking cleaning method, an ultrasonic cleaning method, a shower spray cleaning method, a puddle cleaning method, a brush cleaning method, or a stirring cleaning method may be used. Cleaning or ultrasonic cleaning is preferred.
세정제 조성물에 기판을 침지하거나 초음파를 이용하는 세정 방법은 실온에서 수행 가능하여, 고온에서 세정할 필요가 없기 때문에 에너지를 절약할 수 있을 뿐 아니라, 금속의 부식도 최소화할 수 있다. 여기서, 실온이란 10~40℃, 바람직하게는 20~30℃, 보다 바람직하게는 약 25℃를 가리킨다. The cleaning method by immersing the substrate in the cleaning composition or by using ultrasonic waves can be performed at room temperature, and thus it is not necessary to clean at a high temperature, thereby saving energy and minimizing corrosion of the metal. Here, room temperature means 10-40 degreeC, Preferably it is 20-30 degreeC, More preferably, it points out about 25 degreeC.
본 발명의 세정제 조성물을 사용할 수 있는 기판은 특정 장치에 포함되어 있는 것에 한정되지 않으며, 반도체소자, 또는 평판 디스플레이 소자에 사용되는 금속을 포함하는 막질이라면 어떤 것이라도 가능하다. The board | substrate which can use the cleaning composition of this invention is not limited to what is contained in the specific apparatus, As long as it is a film | membrane quality containing the metal used for a semiconductor element or a flat panel display element, it is possible.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시한다. 그러나 하기의 실시예는 본 발명을 보다 쉽게 이해하기 위하여 제공되는 것일 뿐, 이에 의해 본 발명의 내용이 한정되는 것은 아니다. Hereinafter, preferred embodiments of the present invention will be described in order to facilitate understanding of the present invention. However, the following examples are merely provided to more easily understand the present invention, and the contents of the present invention are not limited thereto.
실시예Example 1~4 및 1 to 4 and 비교예Comparative example 1~3 1-3 : 세정제 조성물의 제조 : Preparation of Cleaning Composition
교반기가 설치되어 있는 혼합조에 하기 표 1에 기재된 성분과 함량을 사용하여 상온에서 1시간 동안 500rpm의 속도로 교반하여 세정제 조성물을 제조하였다.The cleaning composition was prepared by stirring at a speed of 500 rpm for 1 hour at room temperature using the components and contents shown in Table 1 in a mixing tank equipped with a stirrer.
실험예Experimental Example : 세정력 및 부식성 평가 : Evaluation of detergency and corrosion
본 발명에 따른 세정제 조성물의 세정력 및 부식성을 평가하기 위하여, 하기와 같은 실험을 수행하였다. In order to evaluate the detergency and corrosion of the detergent composition according to the present invention, the following experiment was performed.
1. 세정력 평가1. Evaluation of cleaning power
상기 실시예 1~4 및 비교예 1~3에서 제조한 세정제 조성물 15L를 스프레이(Spray) 장비에 넣고, 표면을 PSL(Polystylene Latex)로 오염시킨 기판을 일정 시간 세정 후, 상기 세정물을 꺼내어 1분 동안 물로 수세한다. 스핀 드라이어(Spin dryer)로 건조시킨다.15L of the cleaning composition prepared in Examples 1 to 4 and Comparative Examples 1 to 3 were placed in a spray equipment, and the substrate was contaminated with PSL (Polystylene Latex) for a predetermined time, and then the cleaning product was taken out. Wash with water for minutes. Dry with a spin dryer.
PSL 오염: PSL를 물에 일정농도로 희석시켜 일정량을 기판에 떨어뜨려 1분간 방치한 후 스핀 드라이어로 건조시킨다.PSL contamination: Dilute PSL to a certain concentration in water, drop a certain amount onto the substrate, leave for 1 minute, and dry with a spin dryer.
2. 부식성 평가2. Corrosion assessment
상기 실시예 1~4 및 비교예 1~3에서 제조한 세정제 조성물 100㎖를 각각 용량 250㎖의 비이커에 넣고, 유리 위에 알루미늄 단일막이 형성된 기판을 30분 동안 침지하여 세정을 하였다. 상기 세정물을 꺼내어 물로 수세하고, 질소가스로 세정물 표면의 물을 제거한 후 건조하고, 부식 정도를 육안 관찰 및 4-포인트 프로브(point probe)로 관측하였다.100 ml of the cleaning composition prepared in Examples 1 to 4 and Comparative Examples 1 to 3 were placed in a beaker having a capacity of 250 ml, respectively, and the substrate having the aluminum single layer formed thereon was immersed for 30 minutes for cleaning. The washings were taken out, washed with water, dried with nitrogen gas to remove the water on the surface of the washings, and dried, and the degree of corrosion was observed by visual observation and a four-point probe.
세정력과 부식성의 결과(알루미늄 막에 대한 에칭속도가 1Å/min초과이면 X로 표기하였다.)는 표 1에 나타내었다.The results of detergency and corrosiveness (marked with X when the etching rate for the aluminum film exceeds 1 μs / min) are shown in Table 1.
[표 1][Table 1]
TMAH
(중량%)Alkaline compounds
TMAH
(weight%)
계면활성제
(중량%)Nonionic
Surfactants
(weight%)
(중량%)water
(weight%)
(중량%)TGL
(weight%)
(중량%)Ascorbic acid
(weight%)
(에칭속도≤1Å/min)○
(Etching Speed≤1Å / min)
(에칭속도≤1Å/min)○
(Etching Speed≤1Å / min)
(에칭속도≤1Å/min)○
(Etching Speed≤1Å / min)
(에칭속도≤1Å/min)○
(Etching Speed≤1Å / min)
(완전 제거)〉
(Completely removed)
(에칭속도≤1Å/min)○
(Etching Speed≤1Å / min)
(반투명해짐)〉
(Translucent)
* TMAH : 수산화테트라메틸암모늄* TMAH: Tetramethylammonium Hydroxide
* TGL : 티오글리세롤* TGL: Thioglycerol
표 1에 나타난 바와 같이, 본 발명에 따른 세정제 조성물은 세정력이 우수할 뿐 아니라, 부식성도 나타나지 않음을 확인하였다. 또한, 계면활성제를 추가로 포함하는 경우 세정력이 보다 우수하였다.As shown in Table 1, the cleaning composition according to the present invention was confirmed that not only excellent cleaning power, but also no corrosiveness. In addition, the cleaning power was better when the surfactant is further included.
반면, 비교예 1과 비교예 3에서 제조한 세정제 조성물은 금속에 대한 세정 효과는 우수하나 금속층의 부식으로 사용이 불가하며, 비교예 2에서 제조한 세정제 조성물은 금속에 대한 부식성은 양호하나 세정력이 낮아 세정제 조성물로서 사용이 불가하다.On the other hand, the cleaning composition prepared in Comparative Example 1 and Comparative Example 3 is excellent in the cleaning effect on the metal but can not be used as a corrosion of the metal layer, the cleaning composition prepared in Comparative Example 2 has good corrosion resistance to the metal but the cleaning power It is low and cannot be used as a cleaning composition.
상기 결과로 본 발명에 따른 세정제 조성물을 사용하면 금속을 부식시키지 않으면서 기판 위의 오염물을 깨끗하게 제거하는 것이 용이함을 알 수 있다.As a result, it can be seen that using the cleaning composition according to the present invention, it is easy to clean the contaminants on the substrate without corrosion of the metal.
본 발명은 알루미늄 또는 알루미늄을 포함하는 합금이 노출되어 있는 표면을 세정하는 세정제 조성물에 관한 것으로, 알루미늄 및 알루미늄 합금에 대해 부식성이 없고, 유무기오염물 및 파티클 등의 제거에 적합하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning composition for cleaning a surface on which aluminum or an alloy containing aluminum is exposed.
특히 본 발명에 따른 세정제는, 금속의 부식을 일으키지 않을 뿐만 아니라 기판위의 오염물을 양호하게 제거할 수 있다. 금속이 사용되지 않는 공정에서는 TMAH 단독으로 세정제로써 사용이 가능하며, 이 때의 TMAH는 세정력이 우수하다. 그러나 금속층이 있을 경우 부식이 심해 사용이 불가하다. 따라서, 본 발명에 따른 세정제는, 기존에 사용해 오던 세정력과 동등 이상의 능력을 가지고 있으며, 금속의 부식이 발생하지 않아 금속층이 있는 기판에서도 사용이 가능하다. 따라서 본 발명의 세정제 조성물은, 반도체소자, 액정표시소자, PDP, 유기발광소자 등의 평판 디스플레이 소자에 사용되는 금속을 포함하는 기판일 수 있다.In particular, the cleaning agent according to the present invention can not only cause metal corrosion but also can remove contaminants on the substrate well. In a process where no metal is used, TMAH alone can be used as a cleaning agent, and TMAH at this time has excellent cleaning power. However, if there is a metal layer, the corrosion is severe and cannot be used. Therefore, the cleaning agent according to the present invention has a capability equal to or higher than that of the conventionally used cleaning power, and since the corrosion of the metal does not occur, it can be used even in a substrate having a metal layer. Therefore, the cleaning composition of the present invention may be a substrate containing a metal used in a flat panel display device such as a semiconductor device, a liquid crystal display device, a PDP, an organic light emitting device.
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