KR101285123B1 - Composition for removing photoresist and transparent conducting film - Google Patents

Abstract

The present invention relates to a stripper composition for removing a photoresist and a transparent conductive film, and more particularly, an organic acid-based transparent conductive film remover capable of removing a transparent conductive film from a semiconductor device, and an organic amine and a solvent. It provides the peeling liquid composition contained in a peeling liquid composition more than a component type. The composition of the present invention may further comprise a glycol ether compound used for the use of the precipitation inhibitor.

The composition of the present invention may include an organic acid-based transparent conductive film remover to remove the transparent conductive film, and the transparent conductive film remover may be used as a corrosion inhibitor including sulfur, thereby preventing corrosion of the metal wiring of the lower metal film. It is possible to selectively or entirely remove not only the patterned photoresist but also the transparent electrodes applied to the photoresist existing on the metal wiring and the transparent electrodes present on the metal wiring while preserving the metal pattern manufactured by the current LCD module process. .

Forresist stripper composition, transparent conductive film stripper composition, additive

Description

Release composition for removing transparent conductive film and resist {Composition for removing photoresist and transparent conducting film}

The present invention is to prevent the corrosion of metal wiring and the like in a two-component or more stripper composition comprising an organic amine and a solvent for removing the photoresist used for forming the metal wiring, and to select a transparent conductive film laminated on the metal wiring or on the photoresist Or it includes a transparent conductive film remover for removing as a whole, and relates to a transparent conductive film and a peeling liquid composition for removing a resist may further include a glycol-like quantum solvent used for precipitation prevention purposes.

In the manufacturing process of semiconductor devices such as integrated circuits (ICs) and ultra-high integrated circuits (VLSIs) and liquid crystal display (LCDs), photolithography processes are generally used to form metal wires. ought. In addition, ITO and IZO, which are typical transparent conductive films, are stacked on a substrate to connect a gay line and a data line to be used as wiring.

In order to remove the resist used in the photoresist process, a stripper solution composed of phenol and its derivatives, alkylbenzenesulfonic acid and chloride-based organic solvents was used in the beginning of the industry. However, since such a releasing agent contains a phenolic compound and a chlorine-based organic solvent, it is toxic and causes corrosion of the lower metal layer, making it difficult to treat the waste liquid, and it is difficult to avoid complicated rinsing processes after peeling because it is non-aqueous. In addition, the etching conditions of the metal and the oxide film are severe due to the tendency of the finer metal wiring to be processed, resulting in greater damage of the photoresist and deterioration of the resist. For this reason, even if treated with an organic solvent, since the resist remains on the substrate, a composition having a high peel strength is required so that there is no residue.

In order to improve this disadvantage, a water-soluble releasing agent composed of an organic amine and a solvent has been proposed and used. In the case of a stripping solution composed of an organic amine and a solvent, it is known as a basic composition of the stripping solution currently used in most processes. However, the change of the metal wiring is made at a high speed every time, and the change of the peeling liquid according to this is calculated | required. The miniaturization of the metal wiring has been required to improve the peeling force by promoting the denaturation of the photoresist by the etching process, and the change of the metal wirings used and the change of the metal wiring into the double or triple structure have the effect of corrosion on the wiring. It needs to be minimized.

To this end, cyclic amines have been proposed to minimize the corrosion of metal wires in the existing chain-type amines, and corrosion inhibitors to prevent galvanic corrosion from double or triple metal wires rather than single film metal wires. This is used.

The prior art as described above has achieved desired results in terms of corrosion prevention and peeling strength improvement as a two-component or more peeling liquid composition containing an organic amine and a solvent, but there is no obvious improvement in terms of partially or entirely removing the transparent conductive film. to be. That is, except for an etchant using an acid, no peeling liquid having a clear ability to remove the transparent conductive film was found. However, in the case of etchant, it has a fatal effect on the metal and cannot remove the photoresist, so it is not suitable for use as a stripping solution having the above function as the stripping solution.

In order to solve the problems of the prior art, an object of the present invention is to include a sulfur-based additives, etc. as an additive for the removal of the transparent conductive film that could not be removed by the conventional peeling liquid composition, transparent as well as photoresist It is to provide a transparent conductive film remover capable of removing all or partially the conductive film, and a release liquid composition for removing a resist including the same.

Another object of the present invention to provide a glycol-like proton solvent to reduce the reaction of the organic amine and the additive, and to include it in a stripping solution composition consisting of an organic amine and a solvent to provide a stripping solution composition that can prevent precipitation will be.

In order to achieve the above object,

A compound represented by Formula 1, a compound represented by Formula 2, 2-mercaptopropiolic acid (thiolactic acid) represented by Formula 3, (Thiolactic acid), N- (2-mercaptopropionyl represented by Formula 4 ) Glycine (N- (2-mercaptopropionyl) glycine), thiobenzoic acid (Thiobenzoic acid) represented by the formula (5), and oxalacetic acid (Oxalacetic acid) provides at least one transparent conductive film removing agent selected from the group consisting of. .

[Formula 1]

[Formula 2]

(3)

[Formula 4]

[Chemical Formula 5]

(In Formula 1 and 2, R and R 'are each independently a combination of one or more selected from the group consisting of alkyl groups having 1 to 10 carbon atoms, hydroxy alkyl (alkyl alcohol), alkyl amine, carboxylic acid and thio acid) Is a group consisting of

The transparent conductive film remover may further include 10 to 20% by weight of the polar solvent used as a precipitation inhibitor in the total composition.

The present invention also provides a release liquid composition for removing a transparent conductive film and resist, which comprises a transparent conductive film remover in an amount of 0.1 to 10 parts by weight, based on 100 parts by weight of the composition containing an organic amine and a solvent.

In the composition, it is preferable that the solvent further comprises 10 to 20% by weight in the total composition of the proton polar solvent used as a precipitation inhibitor.

The composition of the present invention may include the transparent conductive film remover in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the composition including 5 to 50% by weight of the organic amine and 50 to 95% by weight of the quantum polar solvent.

In addition, the composition is transparent to 100 parts by weight of the composition comprising 5 to 50% by weight of the organic amine, and 50 to 95% by weight of the proton polar solvent containing 10 to 20% by weight of the proton polar solvent used as a precipitation inhibitor. Conductive film remover in an amount of 0.01 to 10 parts by weight.

The composition comprises a transparent conductive film remover in an amount of 0.01 to 10 parts by weight based on 100 parts by weight of the composition including 5 to 50% by weight of the organic amine and 50 to 95% by weight of the aprotic polar solvent.

The composition has a transparent conductivity with respect to 100 parts by weight of the composition comprising 5 to 50% by weight of the organic amine, and 50 to 95% by weight of the aprotic polar solvent containing 10 to 20% by weight of the protic polar solvent used as a precipitation inhibitor. Membrane remover in an amount of 0.01 to 10 parts by weight.

The composition is a transparent conductive film remover 0.01 to 10 to 100 parts by weight of the composition comprising 5 to 50% by weight of the organic amine, 10 to 80% by weight of the protic polar solvent, and 15 to 70% by weight of the aprotic polar solvent It includes in parts by weight.

The composition comprises 5 to 50% by weight of the organic amine, 10 to 80% by weight of the protonic polar solvent containing 10 to 20% by weight of the protic polar solvent used as a precipitation inhibitor and 15 to 70% by weight of the aprotic polar solvent To 100 parts by weight of the composition to be contained, the transparent conductive film remover is included in an amount of 0.01 to 10 parts by weight.

Hereinafter, the present invention will be described in detail.

Organic amines play an important role in photoresist stripping systems. Organic amines are strongly alkaline and can be strongly penetrated into the polymer matrix of the deteriorated or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implantation processes to break or weaken the bonds present in the molecule or between molecules. It has been used since the early days of the industry to show a role of facilitating removal by.

Accordingly, the present invention is to add a small amount of an organic acid containing sulfur, that is, a substance capable of removing the transparent conductive film to the peeling liquid composition, thereby giving a function of removing the transparent conductive film not possessed by the existing peeling liquid. There is this. That is, the present invention can form a transparent conductive film using an organic acid additive containing sulfur and remove the transparent conductive film by separating indium and oxide. In addition, the organic acid additive of the present invention is physically or chemically adsorbed to the metal as mercapto-based to help prevent the metal from corrosion.

In addition, the present invention provides a proton polar polar solvent, which is a precipitation preventing agent, which can be used for a long time by removing and alleviating precipitates generated by a reaction between an amine and an organic acid and a reaction between a stripping solution and an organic acid. The present invention can remove the transparent conductive film and the resist without generating a precipitate produced by the reaction of the organic acid containing the organic amine and sulfur for a long time by using the proton polar solvent as a precipitation inhibitor.

In particular, the inclusion of sulfur in the transparent conductive film remover provided in the present invention has an excellent performance in removing the IZO transparent conductive film, which is an alternative to the ITO transparent conductive film due to the depletion of tin.

Accordingly, the present invention provides a transparent conductive film remover capable of removing a transparent conductive film and inhibiting erosion of a metal wiring, and provides a release liquid composition comprising the same in a two-component or more stripper composition composed of an organic amine and a solvent. . In addition, the present invention can provide a peeling liquid composition that can prevent the erosion of the metal wiring by including a glycol-like proton solvent that can reduce the reactivity of the transparent conductive film remover to prevent precipitation as a use of the precipitation inhibitor. have.

The transparent conductive film removing agent in the present invention is preferably a compound containing at least one or more functional groups such as -SH, -OH, -COOH, etc., which has the effect of removing the transparent conductive film. In addition, the new organic acid produced by reacting with -NH ₂ of the -SH group and the amine also has many effects in removing the transparent conductive film. The -SH and -OH functional groups are excellent in corrosion protection by physical and chemical adsorption with metals.

The transparent conductive film remover can remove the transparent conductive film even with a single component, has a more efficient performance in removing the transparent conductive film by reacting with the stripper compositions, and at the same time maintains a corrosion protection phenomenon for the metal wiring. .

Examples of the transparent conductive film remover include a compound represented by Formula 1, a compound represented by Formula 2, 2-mercaptopropiolic acid (Thiolactic acid) represented by Formula 3, and N- represented by Formula 4. (2-mercaptopropionyl) glycine (N- (2-mercaptopropionyl) glycine), mercapto compounds such as thiobenzoic acid represented by the formula (5) and oxalic acid compounds such as oxalacetic acid (Oxalacetic acid) It may be used by selecting one or more from the group consisting of.

[Formula 1]

[Formula 2]

(3)

[Formula 4]

[Chemical Formula 5]

(In Formula 1 and 2, R and R 'are each independently a combination of one or more selected from the group consisting of alkyl groups having 1 to 10 carbon atoms, hydroxy alkyl (alkyl alcohol), alkyl amine, carboxylic acid and thio acid) Is a group consisting of

In addition, the present invention may further comprise 10 to 20% by weight of the quantum polar solvent used as a precipitation inhibitor in the transparent conductive film remover. The precipitation inhibitor may be further included in 10 to 10% by weight of the solvent in the peeling liquid composition. The precipitation inhibitor may be the same as the proton polar solvent, ethylene glycol is most effective.

In the composition of the present invention, it is preferable to use one or more organic amines selected from the group consisting of chain amines. Examples of the chain amine include monoethanolamine, ethylenediamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, 1-amino-2-propanol, diethanolamine, and iminobispropyl Amines, 2-methylaminoethanol, N-methylethanolamine, triethylaminoethanol and the like.

In the present invention, the content of the organic amine is preferably used at 5 to 50% by weight based on the total composition when at least two or more selected from the group mentioned above. At this time, if the content of the amine is less than 5% by weight, there is a problem that the resist removal performance is reduced, and when the content of the amine exceeds 50% by weight, the corrosion may be severe.

The solvent used in the present invention may be a protic polar solvent, an aprotic polar solvent or a mixture thereof, and may include 50 to 99% by weight in 100 parts by weight of the total composition of the amine and the solvent.

When the quantum polar solvent is subjected to the process of removing the resist under high temperature conditions, volatilization does not easily occur due to the high boiling point, and thus the performance of the stripping solution is continuously maintained by maintaining the composition ratio at the beginning of using the stripping solution. do. In addition, the quantum polar solvent lowers the surface force on the lower film quality of the resist under high temperature conditions to facilitate the removal of the photoresist, and low freezing point and high flash point may act advantageously in terms of storage stability. In addition, it possesses the dissolving ability and the ability to lower the reaction produced by the reaction between organic amines and organic acids containing sulfur, which has the effect of inhibiting the production of deadly precipitates or reactants that may occur during the TFT-LCD process. have.

Such proton polar solvents may be mixed with amines, and compounds having almost infinite solubility with water may be used. For example, ethylene glycol, ethylene glycol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, Diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, etc. which are diethylene glycol monoalkyl ethers can be selected and used 1 or more types.

When the content of the quantum polar solvent is a two-component composition, it is preferable to use 50 to 95% by weight based on the total composition. At this time, if the content is less than 50% by weight, the content of the amine is relatively increased to increase corrosion, and precipitation may occur, and thus, a decrease in the use time of the stripping solution may occur. Deterioration may occur at the time of use. In the case of a composition of three or more components, it is preferable to use 10 to 80% by weight based on the total composition. At this time, if the content is less than 10% by weight, the weight of the aprotic polar solvent and the amine compound is increased, and the corrosion of the metal wiring is increased, and the ability to dissolve the polymer gelled by the amine compound and the aprotic polar solvent is increased. This lack of resist has a problem that the ability to remove the resist falls, and if it exceeds 80% by weight, there is a problem that the resist removal ability is lowered because the weight percent of the aprotic polar solvent is relatively reduced.

In the present invention, the aprotic polar solvent functions to dissolve the polymer gel mass separated by the amine compound at a unit molecular level. In particular, it is possible to prevent the phenomenon of poor resist reattachment caused mainly in the cleaning process. The aprotic polar solvents include dimethyl sulfoxide, N-methyl-2-pyrrolidone, N, N-dimethylaceamide, N, N-dimethylformamide, N, N-dimethylimidazole, gamma-buty Rolactone, sulfolane, dimethyl sulfoxide and the like, and these may be used by selecting one or more kinds.

When the content of the aprotic polar solvent is a two-component composition, it is preferable to use 50 to 95% by weight based on the total composition, and when the content is less than 50% by weight, the content of the amine is relatively increased and the corrosion becomes severe. When it exceeds 95% by weight, the resist removal performance is lowered. In the case of a composition of three or more components, it is preferable to use 15 to 70% by weight based on the total composition. At this time, if the content is less than 15% by weight, there is a problem in that the resist removal ability is lowered. When the content is more than 70% by weight, the corrosion of metal wiring is severe, and the weight removal rate of the glycol ether, which is a relatively protonic polar solvent, is reduced, resulting in resist removal ability and There is a problem of poor cleaning capacity.

In addition, in the present invention, in the case of the proton polar solvent, aprotic polar solvent or a mixture thereof, it is most preferable to further include 10 to 20% by weight of an additive which is a proton polar solvent which does not generate precipitates in the stripping solution. . At this time, if the amount of the quantum polar solvent used for preventing precipitation and prolonged use is less than 10% by weight, it is insufficient to control precipitation, and when it exceeds 20% by weight, the ability to remove the transparent conductive film is deteriorated. have.

The amount of the transparent conductive film remover used in the stripper composition of the present invention may be included in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the total composition of the amine and the solvent, and when the content is less than 0.1 parts by weight, the transparent conductive film is removed. There exists a problem which is not, and when it exceeds 10 weight part, there exists a problem which precipitation in peeling liquid and peeling of a photoresist are difficult.

The manufacturing method of the peeling liquid composition of this invention is not specifically limited, It can manufacture by mixing the said components by a conventional method. The invention is then applied using a applicator and patterned by conventional methods. The usage-amount of the peeling liquid composition of this invention can be adjusted with the kind of photosensitive resin and the thickness of a film | membrane. The transparent conductive film includes ordinary transparent electrodes such as ITO and IZO, and may be included as long as the transparent conductive film is included in a substrate such as a semiconductor or a liquid crystal display device, and is not particularly limited.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the examples are only for illustrating the present invention and are not limited thereto.

(Examples 1 to 23 and Comparative Examples 1 to 5)

Each component was mixed according to the composition and content shown in Table 1 below to prepare a photoresist stripper composition.

The peelability test for evaluating the transparent conductive film, photoresist peeling liquid composition of this invention, and the peeling liquid composition of a comparative example used the following method.

(Peelability test)

In order to confirm the pattern of peeling force that changes when an additive for removing the transparent conductive film is added, the peelability test was conducted and the results are shown in Table 1.

After coating a transparent conductive film of IZO with a thickness of 1500 to 500 μm on a bare-glass by sputtering method, the glass is used as a specimen to peel off the transparent conductive film and photoresist. Was removed. In addition, to test the photoresist removal efficiency of the stripper composition, a commonly used forge-type resist composition (DTFR-3650B, Dongjin Semichem Chem) was spin-coated on the bare glass at 2500 rpm and 100 on a hot plate. Heat treatment was carried out for 90 sec at a temperature of ℃. The coating film thickness of 1.5 mu m was measured in nanometer units, and then the wafer was heat-treated at 170 DEG C for 20 minutes after exposure and development to obtain a resist film. This wafer was immersed in the peeling solution described in the Example and the comparative example, maintaining the peeling solution temperature at 70 degreeC, and peeling performance was evaluated based on the following evaluation criteria. Immersion was carried out immediately after and volatilization at 70 ° C. for 24 hours to evaluate the peeling performance. And after depositing the transparent conductive film of IZO by sputtering method on the wafer heat-treated the above photoresist, while maintaining the peeling solution temperature at 70 ℃, the peeling performance of the following Examples and Comparative Examples was immersed in the following evaluation criteria It evaluated based on. Immersion was carried out immediately after and after 24 hours of volatilization to evaluate the peeling performance.

◎ ... Removal within 20 minutes after sleep Removed within 30 minutes after sleeping

△ ... Removed within 60 minutes after bedtime X…. Can't be removed after sinking

However, since precipitation cannot be used in the TFT-LCD process at the time of precipitation occurrence, there is no meaning of peeling force evaluation, and evaluation was not conducted.

Amine Magnetostrictive
Polar solvent Quantum property
Polar solvent Precipitation inhibitor Transparent conductive film remover Precipitation Peel force Kinds amount Kinds amount Kinds amount Kinds amount Kinds amount






room
city
Yes One MEA 30 NMP 30 DEGBE 25 EG 15 ADD-3 2 X ◎ 2 MIPA 30 NMP 30 DEGBE 25 EG 15 ADD-3 2 X △ 3 AEE 30 NMP 30 DEGBE 25 EG 15 ADD-3 2 X △ 4 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-4 2 X ◎ 5 MIPA 30 NMP 30 DEGBE 25 EG 15 ADD-4 2 X △ 6 AEE 30 NMP 30 DEGBE 25 EG 15 ADD-4 2 X △ 7 AEE 15 NMP 30 DEGBE 50 EG 10 ADD-3 3 X ◎ 8 MEA 15 NMP 30 DEGBE 40 EG 20 ADD-3 3 X △ 9 MEA 20 NMP 30 DEGBE 25 EG 15 ADD-3 One X △ 10 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-3 One X ○ 11 MEA 20 NMP 30 DEGBE 25 EG 15 ADD-3 1.5 X ○ 12 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-3 1.5 X ○ 13 MEA 20 NMP 30 DEGBE 25 EG 15 ADD-3 2 X ◎ 14 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-3 2 X ◎ 15 MEA 40 DEGBE 60 ADD-3 2 X ○ 16 MEA 40 DEGBE 45 EG 15 ADD-3 2 X ○ 17 MEA 40 NMP 60 ADD-3 2 X ○ 18 MEA 30 NMP 55 EG 15 ADD-3 2 X ○ 19 MEA 30 NMP 30 DEGBE 40 ADD-3 2 X ○ 20 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-1 2 X ○ 21 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-2 2 X ○ 22 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-4 2 X ○ 23 MEA 30 NMP 30 DEGBE 25 EG 15 ADD-5 2 X ○
ratio
School
Yes One MEA 30 NMP 30 DEGBE 25 EG 15 X X 2 MIPA 30 NMP 30 DEGBE 25 EG 15 X X 3 AEE 30 NMP 30 DEGBE 25 EG 15 X X 4 MEA 15 NMP 30 DEGBE 55 EG 5 ADD-3 3 ○ 5 MEA 30 NMP 30 DEGBE 25 MG 15 ADD-3 3 ○

Note) in the above table

MEA: Monoethanolamine

NMEA: N-methylethanolamine

MIPA: Methylisopropylamine (1-Amino-2-propanol)

AEE: 2- (2-aminoethoxyethanol) (2- (2-Aminoethoxy) ethanol)

DEGBE: Diethyleneglycolbutylether

NMP: N-methyl-pyrrolydone

EG: Ethyleneglycol

EGME: Ethyleneglycolmethylether

ADD-1: Chemical represented by Chemical Formula 1

ADD-2: Chemical represented by Chemical Formula 2

ADD-3: Chemical represented by Chemical Formula 3

ADD-4: Chemical represented by Chemical Formula 4

ADD-5: Chemical represented by Chemical Formula 5

In the results of Table 1, in the case of the present invention, including the additive for removing the transparent conductive film, it can be seen that the peeling force is superior and do not precipitate compared to Comparative Examples 1 to 6. At this time, Comparative Examples 4 to 6 are examples for confirming that precipitation occurs when the composition is changed.

As described above, the composition according to the present invention, including a transparent conductive film remover, not only has excellent removal power of the transparent conductive film for producing metal wiring, but also has excellent effect on resist removal power, thereby causing unwanted Al to be generated during the process. There is an effect that can completely remove and clean the transparent conductive film and resist without corrosion of the metal wiring of the lower metal film such as Mo, Mo. In addition, the present invention may adjust the removal rate of the transparent conductive film applied as a whole to produce the transparent electrode, thereby removing the entire transparent conductive film and the partial or optional transparent conductive film.

Claims (17)

A compound represented by Formula 1, a compound represented by Formula 2, N- (2-mercaptopropionyl) glycine represented by Formula 4 (N- (2-mercaptopropionyl) glycine), thiobenzoic acid represented by Formula 5 ( Thiobenzoic acid) and oxalacetic acid (Oxalacetic acid) is selected from one or more, A transparent conductive film remover further comprising 10 to 20% by weight of ethylene glycol in the total composition as a precipitation inhibitor. [Formula 1]

[Formula 2]

[Formula 4]

[Chemical Formula 5]

(In Formula 1 and 2, R and R 'are each independently a group consisting of a combination of one or more selected from the group consisting of alkyl groups, hydroxy alkyl (alkyl alcohol), alkyl amine and thio acid having 1 to 10 carbon atoms) to be.) delete delete To 100 parts by weight of a composition comprising an organic amine and a solvent, which do not contain water, A release liquid composition for removing a transparent conductive film and resist, comprising the transparent conductive film remover according to claim 1 in an amount of 0.1 to 10 parts by weight. delete The method of claim 4, wherein the amine is contained in an amount of 1 to 50% by weight in 100 parts by weight of the total composition of the amine and the solvent. The method of claim 4, wherein the organic amine is monoethanolamine, ethylenediamine, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, 1-amino-2-propanol, diethanolamine A peeling liquid composition for removing a transparent conductive film and resist, which is a chain amine compound selected from the group consisting of iminobispropylamine, 2-methylaminoethanol, N-methylethanolamine, and triethylaminoethanol. The stripper composition according to claim 4, wherein the solvent is a proton polar solvent, an aprotic polar solvent or a mixture thereof. The method of claim 8, wherein the proton polar solvent is ethylene glycol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethyl glycol ethyl ether, diethylene glycol butyl ether and diethyl A peeling liquid composition for removing a transparent conductive film and a resist, which is a glycol ether compound selected from the group consisting of glycol propyl ether. The method of claim 8, wherein the aprotic polar solvent is N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, N, N-dimethylimidazole, gamma-buty A peeling liquid composition for removing the transparent conductive film and the resist selected from the group consisting of rockactone, sulfolane, and dimethyl sulfoxide. 5. The stripper composition for removing a transparent conductive film and resist of claim 4, wherein the solvent further comprises 10 to 20% by weight of a quantum polar solvent used as a precipitation inhibitor in the total composition. 12. The release liquid composition according to claim 11, wherein the precipitation preventing agent is ethylene glycol. The composition according to claim 4, wherein the composition comprises 5 to 50% by weight of organic amine and 50 to 95% by weight of a quantum polar solvent containing 10 to 20% by weight of the quantum polar solvent used as a precipitation inhibitor. The transparent conductive film and resist removal composition containing the transparent conductive film removal additive in an amount of 0.01-10 weight part with respect to a part. The method of claim 4, wherein the composition is an amount of 0.01 to 10 parts by weight of an additive for removing a transparent conductive film based on 100 parts by weight of a composition containing 5 to 50% by weight of an organic amine and 50 to 95% by weight of an aprotic polar solvent. A transparent conductive film and a resist removal composition comprising a. The composition of claim 4, wherein the composition comprises 5 to 50% by weight of an organic amine and 50 to 95% by weight of an aprotic polar solvent containing 10 to 20% by weight of a protonic polar solvent used as a precipitation inhibitor. The transparent conductive film and resist removal composition containing the transparent conductive film removal additive in an amount of 0.01-10 weight part with respect to a part. The method according to claim 4, wherein the composition is transparent conductive relative to 100 parts by weight of the composition comprising 5 to 50% by weight of the organic amine, 10 to 80% by weight of the protic polar solvent, and 15 to 70% by weight of the aprotic polar solvent. A transparent conductive film and resist removal composition comprising the film removal additive in an amount of 0.01 to 10 parts by weight. The composition of claim 4, wherein the composition comprises 5 to 50% by weight of organic amine, and 10 to 80% by weight of aprotic polar solvent and 10 to 20% by weight of aprotic polar solvent used as precipitation inhibitor. To about 100 parts by weight of the composition comprising from 70% by weight, a transparent conductive film and resist removing composition comprising an additive for removing the transparent conductive film in an amount of 0.01 to 10 parts by weight.