KR101265642B1 - Light emitting device package and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a light emitting device package and a method of manufacturing the same, and more particularly, to a light emitting device package and a manufacturing method thereof capable of improving luminous efficiency and reliability of the light emitting device. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a first mounting groove on a first surface of a substrate; Forming a second mounting groove and a through hole in an area in the first mounting groove of the substrate; Forming an insulating layer on the substrate; Forming at least one of the first mounting groove and the second mounting groove and an electrode connected to the second surface of the substrate through the through hole; Mounting a light emitting element on an electrode formed in the second mounting groove; And filling the filler material on the upper side of the light emitting device.

PCB, package, submount, mounting groove, PCB.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package,

The present invention relates to a light emitting device package and a method of manufacturing the same, and more particularly, to a light emitting device package and a manufacturing method thereof capable of improving luminous efficiency and reliability of the light emitting device.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized. GaP: N series green LEDs and information communication devices As a light source for a display image of an electronic device.

Such a light emitting diode is a next generation light source of the optoelectronic semiconductor industry led by the 21st century compound semiconductor, and has been attracting attention as a light source that is excellent in energy saving effect compared with the conventional light source and can be semi-permanently used.

In recent years, as the luminance problem, which was the limit of LEDs, has been greatly improved, application markets such as backlight, camera flash, automobile, electric signboard, traffic signal,

Particularly, LEDs for LCD backlight units, which are small in size and high in brightness, are expected to be widely used instead of CCFL lamps, which have been used as light sources for existing backlight units.

Such an LED is packaged and used in a package or submount formed by ceramics or the like while the electrode is bonded to the lead.

1, the LED 3 is connected to the substrate 2 on which the mounting groove 1 is formed, and the package 4, to which the LED 3 is connected, Can be used by being coupled to the PCB substrate 6 on which the substrate 5 is formed.

SUMMARY OF THE INVENTION The present invention provides a light emitting device package capable of bonding a lens having an air gap in a light emitting device package and preventing a short circuit when bonded to a PCB, have.

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a first mounting groove on a first surface of a substrate; Forming a second mounting groove and a through hole in an area in the first mounting groove of the substrate; Forming an insulating layer on the substrate; Forming at least one of the first mounting groove and the second mounting groove and an electrode connected to the second surface of the substrate through the through hole; Mounting a light emitting element on an electrode formed in the second mounting groove; And filling the filler material on the upper side of the light emitting device.

The step of forming the second mounting groove and the through hole may further include the step of simultaneously forming the shot preventing groove in the unit package defining area.

The method may further include attaching a lens on an upper side of the substrate after filling the filler.

On the other hand, the lens can be attached to the upper side of the first mounting groove using an adhesive, and can be attached on the substrate such that an air layer is formed between the lens substrate and the substrate.

The first mounting groove and the second mounting groove may be connected in a stepwise manner, and the filling material may be filled up to the first mounting groove.

According to a second aspect of the present invention, there is provided a light emitting device package including a first mounting groove on which a light emitting element is mounted, a second mounting groove formed on an outer end of the first mounting groove, A substrate on which a pair of through holes are formed; An electrode positioned to connect the first mounting groove and the lower side of the substrate through the through hole; A light emitting element connected to the electrode of the first mounting groove; A filling material filled on the upper side of the light emitting element; And a lens positioned above the substrate.

In the case where a light emitting device package or a submount of a wafer level is bonded to a metal wiring of a PCB substrate by using cream solder, conductive epoxy, or the like, when manufacturing various light emitting units, The solder or the epoxy is brought into contact with the surface of the substrate exposed by the dicing process of the package and is electrically connected to the metal wiring, thereby greatly improving defects and maximizing the production efficiency.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

Like reference numerals designate like elements throughout the description of the drawings. The dimensions of the layers and regions in the figures are exaggerated for clarity. Each embodiment described herein also includes a complementary conductive type embodiment.

It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between . It will be appreciated that if a portion of a component, such as a surface, is referred to as " inner ", it means that it is farther from the outside of the device than other portions of the element.

Further, relative terms such as " beneath " or " overlies " are used herein to refer to a layer or region relative to a substrate or reference layer, Can be used to illustrate.

It will be appreciated that these terms are intended to encompass different orientations of the device in addition to those depicted in the Figures. Finally, the term 'directly' means that there are no intervening elements in the middle. As used herein, the term " and / or " includes any and all combinations and all combinations of related items noted.

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, these elements, components, regions, layers and / Will be understood by those of ordinary skill in the art.

These terms are only used to distinguish one element, component, region, layer or region from another region, layer or region. Thus, the first region, layer or region discussed below may be referred to as a second region, layer or region.

≪ Embodiment 1 >

2, a substrate 10 made of a semiconductor or ceramic such as silicon is used to mount a light emitting device 20 on a mounting portion (not shown) 11, a bathtub, and a through hole 12 are formed using a bulk micromachining technique.

Thereafter, an insulation layer 30 for electrical insulation between the substrate 10 and the electrode wiring is formed, and front electrodes 40 for electrical connection with the light emitting device 20 are formed on the insulation layer 30 And the rear electrodes 41 for electrical connection with the metal wiring of the PCB substrate (not shown) are interconnected through the through holes 12. A reflective film 21 may be formed on the inside of the mounting portion 11 where the front electrode 40 is formed.

The light emitting device 20 is bonded on the submount substrate 10 so as to be connected to the front electrode 40 and the filling material 50 in which a phosphor and a silicone resin are mixed is attached to the mounting portion 11, And a light emitting device package which is flatly filled on the upper side thereof and has uniform brightness.

In order to control the distribution of the light emitted from the light emitting device 20, the light emitting device package includes a lens 60 having a patterned shape formed on a glass 70 by a molding method, .

Then, the lens substrate is bonded to the light emitting device package and separated into individual package units by a dicing process. Then, the rear electrode 41 of the submount and the PCB metal wiring (not shown) are connected to the cream solder or the conductive epoxy a light emitting device package module can be manufactured by using epoxy or the like.

As described above, when the light emitting device package module is manufactured, the outer surface of the flat filler 50 located on the substrate 10 of the light emitting device package is bonded to the flat glass surface of the lens substrate.

Therefore, an air gap is not generated between the two bonded surfaces, which may not be suitable for a package structure having an air layer between the bonding surfaces of the light emitting device package substrate and the lens substrate.

3, a structure 80 for forming an air layer may be formed on a portion including the unit package division area A on the package. In this case, a manufacturing process for forming such a structure 80 is added.

≪ Embodiment 2 >

Hereinafter, another embodiment of the light emitting device package manufacturing method will be described in detail.

4, the first mask 120 is patterned on the silicon substrate 100, and the substrate 100 is bulk-etched on the first mask 120, (110). The first mounting groove 110 may provide a space for forming an air gap between the package and the lens substrate when the lens substrate is attached later.

5, the first mask 120 used for forming the first mounting groove 110 is removed, and the second mounting groove 130 (see FIG. 6 And a second mask 121 for forming a through hole 140 and a shot preventing groove 150 are formed.

The through holes 140 serve to interconnect the front side electrodes formed on the front surface of the substrate 100 and the back side electrodes formed on the rear surface of the substrate 100 .

Then, the substrate 100 is patterned using the second mask 121 to form the second mounting groove 130, the through hole 140, and the short prevention groove 150 as shown in FIG. 7 by a bulk etching method. And then the second mask 121 is removed.

In this embodiment, as shown in FIG. 7, a second mounting groove 130 is formed in the first mounting groove 110 for manufacturing a submount having an air gap between the package and the lens substrate The depth h of the first mounting groove 110 and the distance w between the first mounting groove 110 and the second mounting groove 130 are set to be equal to each other. Are each suitably about 10 to 200 mu m.

In addition, the substrate 100, aluminum (aluminum), aluminum nitride as well as silicon (silicon) (aluminum nitride; AlN), aluminum oxide (aluminum oxide; AlO _x), PSG (photo sensitive glass), sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), PCB substrate, and the like.

As a bulk etching method for forming the first mounting groove 110, the second mounting groove 130, the through hole 140 and the shorting preventing groove 150, a wet etching method, a dry etching method, a dry etching method, a laser drilling method, or the like may be used, and two or more of the above methods may be used together. As a representative method of the dry etching method, a deep reactive ion etching etching method.

In this embodiment, in the process of forming the first mounting groove 110, the second mounting groove 130, the through hole 140, and the short-circuiting prevention groove 150, a [100] orientation single crystal silicon substrate is used KOH solution or an anisotropic wet etching solution such as TMAH or EDP.

In this way, when the wet etching is performed, the mounting grooves 110 and 130 having the inclined surfaces of about 50 to 60 degrees (preferably 54.74 degrees) are formed. The width of the second mounting groove 130 for mounting the light- The depth may vary depending on the size or thickness of the light emitting device, and light emitted from the side of the light emitting device can be used as efficiently as possible.

In order to separate the positive electrode and the negative electrode from each other in forming the through hole 140, it is more preferable to divide the through hole 140 for the positive electrode and the through hole 140 for the negative electrode Do.

Meanwhile, in the above-described etching process, it is necessary to use masks 120 and 121 for separating etching portions and portions to be protected from etching. In this case, the mask layer used is a material which can be used as a mask for a long time And a silicon nitride film or a silicon oxide film may be used.

As another example of the above-mentioned bulk etching, a method in which a wet etching method and a dry etching method are mixed may be used. For example, the first mounting groove 110 for forming the air layer is formed by the dry etching method using the deep reactive ion etching method, and the second mounting groove 13 for mounting the light emitting element, the through hole 140, The short prevention groove 150 may be formed by an anisotropic wet etching method.

In this case, since the first mounting groove 110 can be formed by using the photoresist used in patterning as an etching mask, the silicon nitride film or the silicon oxide film used for forming the first mounting groove 110 It is possible to omit the process of forming or removing the first mask 120, thereby saving manufacturing cost.

Next, an insulation layer 200 for electrical insulation of the substrate 100 is mounted on the substrate 100 including the mounting portions 110 and 130 formed on the substrate 100, the short-prevention groove 150, and the through- 100) surface.

In order to form the insulating layer 200, a silicon oxide film having excellent insulating properties is formed on the entire surface of the substrate 100 by a method such as thermal oxidation.

As a method for forming the insulating layer 200 other than the above method, a silicon nitride film may be deposited by an LPCVD method or a PECVD method to be used as the insulating layer 200.

The insulating layer 200 may be omitted when an insulator such as aluminum nitride (AlN) or aluminum oxide (AlO _x ) is used as the substrate 100.

8, when the insulating layer 200 is formed on the substrate 100 on which the mounting portions 110 and 130 and the through holes 150 are formed, the front electrode 300 and the rear electrode 310 Is formed by patterning the electrode. The front electrode 300 and the rear electrode 310 are connected to each other through the through hole 140.

As the method of forming the electrodes 300 and 310, the following three methods can be used.

First, it is a method by electroplating. First, after the mounting portions 110 and 130 of the light emitting device, the through holes 140, and the short prevention groove 150 are formed as described above, the rear surface of the substrate 100 of the three-dimensional structure in which the insulating layer 200 is formed And a seed metal is deposited on both sides of the front surface.

An electrode including the front electrode 300 and the rear electrode 310 is formed on the bonding metal by electroplating or electroless plating.

Thereafter, a photoresist is coated, expose and developed to etch the electrodes 300 and 310 so that the electrodes 300 and 310 are separated from each other by a positive electrode and a negative electrode, do.

After the photoresist is patterned before forming the electrodes 300 and 310 and then the electrodes 300 and 310 are formed by the plating method, the photoresist is removed and the bonding metal (not shown) is etched, The electrodes may be formed by separating the negative electrodes from each other.

Second, it is a lift-off method. First, a photoresist is coated on both the front and back surfaces of the substrate 100, exposed and developed so that the two electrodes and the negative electrode are separated from each other.

Thereafter, the electrodes 300 and 310 are deposited on the front, back, and through holes by a sputtering method or an E-beam evaporation method, and the applied photoresist is lifted off The state shown in FIG. 8 is obtained.

In addition to such a structure, a metal layer may be formed by electroplating or electroless plating to increase the thickness of the electrodes 300 and 310 to complement the electrodes 300 and 310.

Third, it is a lift-off and electroplating mixing method. First, a front electrode 300 or a rear electrode 310 is formed on the front surface or the rear surface of the substrate 100 by the lift-off method described above.

Electrodes are formed on the opposite surface of the electrode formed by the lift-off method by electroplating or electroless plating, and the front electrode 300 and the rear electrode 310 thus formed are electrically connected to each other through the through- .

The metal for forming the electrodes 300 and 310 should not only be excellent in electrical characteristics but also be excellent in adhesion to an insulating layer. Generally, a metal such as titanium (Ti), chromium Cr, tantalum, or the like may be used as an adhesion layer.

In addition, gold (Au), copper (Cu), and aluminum (Al), which are typical materials that can be easily deposited in a semiconductor process while having excellent electrical characteristics, can be used.

At this time, the metal for forming the electrode is exposed to high temperature when the components of the module are coupled during the post-process. Since the adhesion layer Ti or Cr is diffused into Au to decrease the electrical characteristics of Au, To prevent this, a diffusion barrier layer such as platinum (Pt) or nickel (Ni) may be used between the adhesive layer of Ti and Cr and Au.

Therefore, the structure of the electrodes 300 and 310 can form a Ti / Pt / Au or Cr / Ni / Au structure or a Cr / Cu / Ni / Au structure.

A bonding metal (not shown) may be required to form the electrodes 300 and 310 by such an electroplating method. Such a bonding metal should have excellent electrical characteristics such as metal for the electrodes 300 and 310 And adhesion to the insulating layer 200 should be excellent.

Therefore, it is possible to use Cr, Au, Au, Al, and Al as bonding layers by using titanium, chromium, tantalum or the like as an adhesion layer, Cr / Cu, Ti / Au, Ta / Cu, and Ta / Ti / Cu.

In this case, the electrodes 300 and 310 may be formed of Cr / Cu / Cu / Ni / Au or Cr / Au / Au, Cr / Au / Cu / Ni /

Thereafter, in order to improve the efficiency of light emitted from the light emitting device, a reflective layer (not shown) is formed on a bottom surface and at an inclined surface of at least one of the first mounting portion 110 and the second mounting portion 130 of the light emitting device, ) May be formed.

As such a reflective film material, aluminum (Al) or silver (Ag) excellent in reflectivity can be used. The reflective layer may be formed by coating a photoresist on the entire surface, exposing and developing the layer, and then patterning the bottom surface or the inclined surface on which the light emitting device is mounted to expose a metal layer for the reflective layer by a sputtering method or an E-beam deposition method And can be formed by lift-off.

Also, a reflective film may be formed by depositing a reflective film layer on the entire surface and then etching unnecessary portions after patterning.

At this time, the metal forming the reflective film should be formed so as not to be electrically connected to both the electrodes and the negative electrodes of the electrodes 300 and 310 at the same time or not to be overlapped with each other. In order to bond the electrodes to the electrode metal of the light emitting device, It is more preferable that a reflective metal is not formed in a region where a solder or an Au stud 410 (see FIG.

Next, as shown in FIG. 9, on the front electrode 300 described above by a method such as a conductive solder or Au stud 410 bonding on the silicon submount fabricated in the wafer unit, (400) are electrically connected to each other.

Thereafter, the second mounting groove 130 (see FIG. 1) in which the light emitting device 400 is mounted is formed by using a filler material 500 such as a mixture of a phosphor and a silicon gel or an epoxy or silicone gel having excellent translucency. ) Fill the inner and upper parts flatly.

10, a lens 620 having a patterned shape is formed on a lens substrate 610 such as glass to control the distribution of light emitted from the light emitting device 400, (600) is bonded onto the above-described submount using an adhesive (630).

 As described above, the adhesive 630 is applied to the upper side of the submount, that is, the portion including the unit element division region A, to form an air gap 700 (see FIG. 6) between the lens substrate 610 and the filler 500 of the submount. ) Can be fabricated.

The wafer unit package in which the substrate 100 of the light emitting device package and the lens substrate 610 are bonded is separated into individual package units along the unit device division area A by a dicing process.

In this submount, the light emitting device package module can be manufactured by bonding the rear electrode 310 and the PCB metal wiring (not shown) using cream solder, conductive epoxy or the like.

In another method for manufacturing a package module, the wafer-based submount substrate 100 is separated into individual package units by a dicing process, and then the rear electrode 310 and the PCB metal wiring (not shown) May be bonded by using a cream solder, a conductive epoxy, or the like, and the cut lens may be bonded to each package unit to manufacture the light emitting device package module.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It is natural to belong to the scope.

1 is a perspective view showing an example of a general light emitting device package coupled onto a PCB substrate.

2 and 3 are sectional views showing a first embodiment of the present invention.

4 to 10 are cross-sectional views showing the manufacturing steps of the second embodiment of the present invention.

11 is a cross-sectional view illustrating a light emitting device package according to a second embodiment of the present invention.

Claims (10)

Forming a first mounting groove on a first side of the substrate; Forming a second mounting groove and a through hole in a stepped shape with the first mounting groove in an area of the first mounting groove of the substrate; Forming an insulating layer on the substrate; Forming at least one of the first mounting groove and the second mounting groove and an electrode connected to the second surface of the substrate through the through hole; Mounting a light emitting element on an electrode formed in the second mounting groove; And filling the filler material on the upper side of the light emitting device. The method according to claim 1, wherein the step of forming the second mounting groove and the through hole further comprises forming a shot preventing groove in the unit package defining area at the same time. The method of claim 1, further comprising attaching a lens on an upper side of the substrate after the step of filling the filler. The method of manufacturing a light emitting device package according to claim 3, wherein the lens is attached to the upper side of the first mounting groove using an adhesive. The method according to claim 3, wherein the lens is attached on a substrate such that an air layer is formed between the lens substrate and the substrate. delete In the light emitting device package, A substrate on which at least one pair of through-holes are formed; a first mounting groove on which the light emitting device is mounted; a second mounting groove formed on an outer end of the first mounting groove; A short prevention groove located on a lower edge of the substrate; An electrode positioned to connect the first mounting groove and the lower side of the substrate through the through hole; A light emitting element connected to the electrode of the first mounting groove; A filling material filled on the upper side of the light emitting element; And a lens positioned above the substrate. delete The light emitting device package according to claim 7, wherein an air layer is disposed between the upper side of the filler and the lens. The light emitting device package according to claim 7, wherein the filling material is filled in the first mounting groove.

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