KR101256205B1 - Organic light emitting compound and organic light emitting device comprising the same - Google Patents
Organic light emitting compound and organic light emitting device comprising the same Download PDFInfo
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- KR101256205B1 KR101256205B1 KR1020100095388A KR20100095388A KR101256205B1 KR 101256205 B1 KR101256205 B1 KR 101256205B1 KR 1020100095388 A KR1020100095388 A KR 1020100095388A KR 20100095388 A KR20100095388 A KR 20100095388A KR 101256205 B1 KR101256205 B1 KR 101256205B1
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- South Korea
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- compound
- light emitting
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 237
- 239000010410 layer Substances 0.000 claims description 174
- 238000002347 injection Methods 0.000 claims description 67
- 239000007924 injection Substances 0.000 claims description 67
- 125000003118 aryl group Chemical group 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
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- 230000000903 blocking effect Effects 0.000 claims description 15
- 125000001072 heteroaryl group Chemical group 0.000 claims description 14
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 9
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 claims description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 6
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- 125000001424 substituent group Chemical group 0.000 claims description 2
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- 230000000052 comparative effect Effects 0.000 description 30
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 5
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- MAGFQRLKWCCTQJ-UHFFFAOYSA-M 4-ethenylbenzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-M 0.000 description 4
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- 150000001412 amines Chemical class 0.000 description 2
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- GOXNHPQCCUVWRO-UHFFFAOYSA-N dibenzothiophen-4-ylboronic acid Chemical compound C12=CC=CC=C2SC2=C1C=CC=C2B(O)O GOXNHPQCCUVWRO-UHFFFAOYSA-N 0.000 description 2
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- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- RTJJOTXIMVMVKJ-UHFFFAOYSA-N [4-(4,5-diphenyl-1,2,4-triazol-3-yl)phenyl]boronic acid Chemical compound C1=CC(B(O)O)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=CC=C1 RTJJOTXIMVMVKJ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XRWSZZJLZRKHHD-WVWIJVSJSA-N asunaprevir Chemical compound O=C([C@@H]1C[C@H](CN1C(=O)[C@@H](NC(=O)OC(C)(C)C)C(C)(C)C)OC1=NC=C(C2=CC=C(Cl)C=C21)OC)N[C@]1(C(=O)NS(=O)(=O)C2CC2)C[C@H]1C=C XRWSZZJLZRKHHD-WVWIJVSJSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- MIOPJNTWMNEORI-UHFFFAOYSA-N camphorsulfonic acid Chemical compound C1CC2(CS(O)(=O)=O)C(=O)CC1C2(C)C MIOPJNTWMNEORI-UHFFFAOYSA-N 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125797 compound 12 Drugs 0.000 description 1
- 229940126142 compound 16 Drugs 0.000 description 1
- 229940125961 compound 24 Drugs 0.000 description 1
- 229940125846 compound 25 Drugs 0.000 description 1
- 229940127573 compound 38 Drugs 0.000 description 1
- 229940125844 compound 46 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical class C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- CSLSCVHILGCSTE-UHFFFAOYSA-N dibenzothiophen-2-ylboronic acid Chemical compound C1=CC=C2C3=CC(B(O)O)=CC=C3SC2=C1 CSLSCVHILGCSTE-UHFFFAOYSA-N 0.000 description 1
- VBXDEEVJTYBRJJ-UHFFFAOYSA-N diboronic acid Chemical compound OBOBO VBXDEEVJTYBRJJ-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- PIDFDZJZLOTZTM-KHVQSSSXSA-N ombitasvir Chemical compound COC(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@H]1C(=O)NC1=CC=C([C@H]2N([C@@H](CC2)C=2C=CC(NC(=O)[C@H]3N(CCC3)C(=O)[C@@H](NC(=O)OC)C(C)C)=CC=2)C=2C=CC(=CC=2)C(C)(C)C)C=C1 PIDFDZJZLOTZTM-KHVQSSSXSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H10K85/649—Aromatic compounds comprising a hetero atom
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Abstract
Description
유기발광화합물 및 이를 구비한 유기발광소자에 관한 것으로서, 보다 상세하게는 유기발광소자 적용시, 우수한 발광 효율 및 발광 휘도를 구현할 수 있는 유기발광화합물과 상기 화합물을 포함한 유기막을 채용한 유기발광소자에 관한 것이다.The present invention relates to an organic light emitting compound and an organic light emitting device having the same. It is about.
발광 소자(light emitting device)는 자발광형 소자로 시야각이 넓으며 콘트라스트가 우수할 뿐만 아니라 응답시간이 빠르다는 장점을 가진다. 상기 발광 소자는 발광층(emitting layer)에 무기 화합물을 사용하는 무기 발광 소자와 유기 화합물을 사용하는 유기발광소자(Organic Light Emitting Device: OLED)로 구분된다. 유기발광소자는 무기 발광 소자에 비하여 높은 휘도, 낮은 구동전압, 짧은 응답속도 등의 물성이 우수하고 다색화가 가능하다는 점에서 많은 연구의 대상이 된다.The light emitting device is a self-luminous device, and has a wide viewing angle, excellent contrast, and fast response time. The light emitting device is classified into an inorganic light emitting device using an inorganic compound and an organic light emitting device (OLED) using an organic compound in an emitting layer. The organic light emitting device is a subject of much research in that it is excellent in physical properties such as high luminance, low driving voltage, short response speed, and multicolored, compared to the inorganic light emitting device.
상기 유기발광소자는 일반적으로 애노드/유기 발광층/캐소드의 적층구조를 가지며, 애노드/정공주입층/정공수송층/발광층/전자수송층/전자주입층/캐소드 또는 애노드/정공주입층/정공수송층/발광층/정공저지층/전자수송층/전자주입층/캐소드 등과 같은 다양한 구조를 가질 수 있다.The organic light emitting device generally has a stack structure of anode / organic light emitting layer / cathode, and includes anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode or anode / hole injection layer / hole transport layer / light emitting layer / It may have various structures such as a hole blocking layer / electron transport layer / electron injection layer / cathode.
발광효율이 높고 작동수명이 긴 유기발광소자가 구현되기 위해서 고성능의 유기발광화합물이 중요시된다.In order to realize an organic light emitting device having high luminous efficiency and long operating life, a high performance organic light emitting compound is important.
따라서, 높은 발광효율 및 발광휘도를 가지는 발광물질이 요구된다.Therefore, a light emitting material having high luminous efficiency and luminous luminance is required.
첫번째 기술적 과제는 새로운 유기발광화합물을 제공하는 것이다.The first technical challenge is to provide new organic light emitting compounds.
두 번째 기술적 과제는 발광효율 및 발광휘도가 향상된 유기발광소자를 제공하는 것이다.The second technical problem is to provide an organic light emitting device having improved luminous efficiency and luminous brightness.
한 측면에 따라 하기 화학식 I로 표시되는 유기발광 화합물이 제공된다.According to one aspect, an organic light emitting compound represented by the following formula (I) is provided.
<화학식 I><Formula I>
상기 화학식 I에서,In Formula I,
A가 CH, 또는 N이며;A is CH or N;
B1, B2 및 B3가 서로 독립적으로 공유결합, 페닐렌기, 비페닐렌기 또는 9,9'-스파이로바이플루오레닐렌기이며,B 1 , B 2 and B 3 are each independently a covalent bond, a phenylene group, a biphenylene group or a 9,9'-spirobifluorenylene group,
R1, R2 및 R3가 서로 독립적으로 , , 카바졸릴기, N-(C1-C5알킬)카바졸릴기, N-(C6-C20아릴)카바졸릴기, 치환 또는 비치환된 트리아졸기, 9,9'-디(C1-C5알킬)실라플루오레닐기, 9,9'-디(C6-C20아릴)실라플루오레닐기, 디벤조티오페닐기, 트리페닐레닐기, 9,9'-스파이로바이플루오레닐기 또는 페닐기이며,R 1 , R 2 and R 3 are independently of each other , , Carbazolyl group, N- (C 1 -C 5 alkyl) carbazolyl group, N- (C 6 -C 20 aryl) carbazolyl group, substituted or unsubstituted triazole group, 9,9'-di (C 1 -C 5 alkyl) silafluorenyl group, 9,9'-di (C 6 -C 20 aryl) silafluorenyl group, dibenzothiophenyl group, triphenylenyl group, 9,9'-spirobifluorenyl group Or a phenyl group,
CY1, CY2, CY3가 서로 독립적으로 치환 또는 비치환된 C6-C50방향족 고리, 또는 치환 또는 비치환된 C2-C50헤테로방향족 고리이며,CY1, CY2, CY3 are each independently a substituted or unsubstituted C 6 -C 50 aromatic ring, or a substituted or unsubstituted C 2 -C 50 heteroaromatic ring,
단, R1, R2 및 R3가 동시에 페닐기가 아니다.Provided that R 1 , R 2 and R 3 are not a phenyl group at the same time.
다른 한 측면에 따라, 제1전극; 제2전극; 및 상기 제1전극과 상기 제2전극 사이에 적어도 한 층의 유기막을 포함하는 유기발광소자로서, 상기 유기막이 전술한 바와 같은 유기발광화합물을 포함하는 유기발광소자를 제공한다.According to another aspect, the first electrode; A second electrode; And an organic light emitting device including at least one organic film between the first electrode and the second electrode, wherein the organic film includes an organic light emitting compound as described above.
한 측면에 따른 새로운 유기발광화합물을 구비한 유기발광소자는 발광효율 및 발광휘도가 향상된다.An organic light emitting device having a new organic light emitting compound according to one aspect improves luminous efficiency and luminous luminance.
도 1a 내지 1c는 각각, 본 발명을 따르는 유기발광소자의 일 구현예의 구조를 간략하게 나타낸 단면도이다.1A to 1C are cross-sectional views schematically illustrating structures of one embodiment of an organic light emitting diode according to the present invention.
이하에서 예시적인 하나 이상의 구현예에 따른 유기발광화합물 및 이를 구비한 유기발광소자에 대하여 더욱 상세히 설명한다.Hereinafter, an organic light emitting compound and an organic light emitting device having the same according to at least one exemplary embodiment will be described in more detail.
본 명세서에서 유기발광화합물은 유기발광소자에 사용되는 화합물이라는 의미로서 반드시 발광이 가능한 화합물로 그 범위가 한정되지 않으며, 그 적용 범위도 유기 발광층에 한정되지 않고, 정공주입층, 정공수송층, 전자주입층 및 전자수송층 등 유기발광소자를 구성하는 어느 층에나 모두 사용될 수 있다.In the present specification, the organic light emitting compound is a compound used in an organic light emitting device, which is not necessarily limited to a compound capable of emitting light, and its application range is not limited to the organic light emitting layer, and includes a hole injection layer, a hole transport layer, and an electron injection. All of the layers constituting the organic light emitting device such as the layer and the electron transport layer can be used.
일 구현예에 따른 유기발광화합물은, 하기 화학식 I로 표시된다:An organic light emitting compound according to one embodiment is represented by Formula I:
<화학식 I><Formula I>
상기 화학식 I에서,In Formula I,
A가 CH, 또는 N이며;A is CH or N;
B1, B2 및 B3가 서로 독립적으로 공유결합, 페닐렌기, 비페닐렌기 또는 9,9'-스파이로바이플루오레닐렌기이며,B 1 , B 2 and B 3 are each independently a covalent bond, a phenylene group, a biphenylene group or a 9,9'-spirobifluorenylene group,
R1, R2 및 R3가 서로 독립적으로 , , 카바졸릴기, N-(C1-C5알킬)카바졸릴기, N-(C6-C20아릴)카바졸릴기, 치환 또는 비치환된 트리아졸기, 9,9'-디(C1-C5알킬)실라플루오레닐기, 9,9'-디(C6-C20아릴)실라플루오레닐기, 디벤조티오페닐기, 트리페닐레닐기, 9,9'-스파이로바이플루오레닐기 또는 페닐기이며,R 1 , R 2 and R 3 are independently of each other , , Carbazolyl group, N- (C 1 -C 5 alkyl) carbazolyl group, N- (C 6 -C 20 aryl) carbazolyl group, substituted or unsubstituted triazole group, 9,9'-di (C 1 -C 5 alkyl) silafluorenyl group, 9,9'-di (C 6 -C 20 aryl) silafluorenyl group, dibenzothiophenyl group, triphenylenyl group, 9,9'-spirobifluorenyl group Or a phenyl group,
CY1, CY2, CY3가 서로 독립적으로 치환 또는 비치환된 C6-C50방향족 고리, 또는 치환 또는 비치환된 C2-C50헤테로방향족 고리이며,CY1, CY2, CY3 are each independently a substituted or unsubstituted C 6 -C 50 aromatic ring, or a substituted or unsubstituted C 2 -C 50 heteroaromatic ring,
단, R1, R2 및 R3가 동시에 페닐기가 아니다.Provided that R 1 , R 2 and R 3 are not a phenyl group at the same time.
상기 화학식 I로 표시되는 화합물은 유기발광소자 중 제1전극과 제2전극 사이에 개재된 유기막을 이루는 물질로 적합하다. 상기 화학식 I의 화합물은 유기발광소자의 유기막, 특히 발광층, 정공주입층, 정공수송층 또는 전자수송층에 사용되기 적합하며 인광호스트 재료뿐만 아니라 도판트 재료로서도 사용될 수 있다. 상기 화학식 I로 표시되는 화합물은 수명특성이 우수하다.The compound represented by Chemical Formula I is suitable as a material forming an organic film interposed between the first electrode and the second electrode of the organic light emitting device. The compound of formula (I) is suitable for use in organic membranes of organic light emitting devices, especially light emitting layers, hole injection layers, hole transport layers or electron transport layers, and may be used as a phosphorescent host material as well as a dopant material. Compound represented by the formula (I) is excellent in life characteristics.
상기 방향족 고리는 방향족 고리 시스템을 가지는 2가 내지 10가 그룹으로서, 2 이상의 고리 시스템을 포함할 수 있으며, 상기 2 이상의 고리 시스템은 서로 결합 또는 융합된 형태로 존재할 수 있다. 상기 헤테로방향족 고리는 상기 방향족 고리 중 하나 이상의 탄소가 N, O, S 및 P로 이루어진 군으로부터 선택된 하나 이상으로 치환된 그룹을 가리킨다.The aromatic ring is a divalent to 10-valent group having an aromatic ring system, and may include two or more ring systems, and the two or more ring systems may exist in a bonded or fused form with each other. The heteroaromatic ring refers to a group in which at least one carbon of the aromatic ring is substituted with at least one selected from the group consisting of N, O, S and P.
보다 구체적으로, 상기 CY1, CY2, CY3는 서로 독립적으로, 벤젠, N-(C6-C20아릴)카바졸, 9,9'-디(C1-C5알킬)플루오렌, 디벤조티오펜, 9,9'-디(C1-C5알킬)실라플루오렌, 1,1'-디(C1-C5알킬)인덴, N-(C6-C20아릴)인돌, 인돌로카바졸 및 이들의 유도체로 이루어진 군으로부터 선택된 화합물로부터 파생된 방향족 또는 헤테로방향족 고리일 수 있다.More specifically, the CY1, CY2, CY3 are independently of each other, benzene, N- (C 6 -C 20 aryl) carbazole, 9,9'-di (C 1 -C 5 alkyl) fluorene, dibenzoti Offen, 9,9'-di (C 1 -C 5 alkyl) silafluorene, 1,1'-di (C 1 -C 5 alkyl) indene, N- (C 6 -C 20 aryl) indole, indolo It may be an aromatic or heteroaromatic ring derived from a compound selected from the group consisting of carbazole and derivatives thereof.
상기 트리아졸기, 방향족고리, 헤테로방향족고리가 치환될 경우, 상기 트리아졸기, 방향족고리, 헤테로방향족고리의 치환기가 서로 독립적으로 C1-C50알킬기; 비치환 또는 C1-C50알킬기로 치환된 C6-C50아릴기; 및 비치환 또는 C1-C50알킬기로 치환된 C2-C50헤테로아릴기;로 이루어진 군으로부터 선택된 하나 이상인 것을 특징으로 하는 유기발광화합물.When the triazole group, aromatic ring, heteroaromatic ring is substituted, the substituents of the triazole group, aromatic ring, heteroaromatic ring are independently of each other C 1 -C 50 alkyl group; C 6 -C 50 aryl groups unsubstituted or substituted with C 1 -C 50 alkyl groups; And a C 2 -C 50 heteroaryl group which is unsubstituted or substituted with a C 1 -C 50 alkyl group.
보다 상세하게는, 상기 유기발광화합물은 하기 화학식 1 내지 55의 구조를 가질 수 있으나 이에 한정되는 것은 아니다:More specifically, the organic light emitting compound may have a structure of Formula 1 to 55, but is not limited thereto:
<화학식 1> <화학식 2>≪ Formula 1 > < EMI ID =
<화학식 3> <화학식 4>≪ Formula 3 > < Formula 4 >
<화학식 5> <화학식 6>≪ Formula 5 > < EMI ID =
<화학식 7> <화학식 8><Formula 7> <Formula 8>
<화학식 9> <화학식 10><Formula 9> <Formula 10>
<화학식 11> <화학식 12><Formula 11> <Formula 12>
<화학식 13> <화학식 14><Formula 13> <Formula 14>
<화학식 15> <화학식 16><Formula 15> <Formula 16>
<화학식 17> <화학식 18><Formula 17> <Formula 18>
<화학식 19> <화학식 20>≪ Formula 19 > < EMI ID =
<화학식 21> <화학식 22><Formula 21> <Formula 22>
<화학식 23> <화학식 24><Formula 23> <Formula 24>
<화학식 25> <화학식 26><Formula 25> <Formula 26>
<화학식 27> <화학식 28><Formula 27> <Formula 28>
<화학식 29> <화학식 30><Formula 29> <Formula 30>
<화학식 31> <화학식 32><Formula 31> <Formula 32>
<화학식 33> <화학식 34><Formula 33> <Formula 34>
<화학식 35> <화학식 36><Formula 35> <Formula 36>
<화학식 37> <화학식 38><Formula 37> <Formula 38>
<화학식 39> <화학식 40><Formula 39> <Formula 40>
<화학식 41> <화학식 42><Formula 41> <Formula 42>
<화학식 43> <화학식 44><Formula 43> <Formula 44>
<화학식 45> <화학식 46><Formula 45> <Formula 46>
<화학식 47> <화학식 48><Formula 47> <Formula 48>
<화학식 49> <화학식 50><Formula 49> <Formula 50>
<화학식 51> <화학식 52><Formula 51> <Formula 52>
<화학식 53> <화학식 54><Formula 53> <Formula 54>
<화학식 55> <Formula 55>
상기 화학식 I로 표시되는 유기발광화합물은 통상의 합성 방법을 이용하여 합성될 수 있으며, 상기 화합물의 보다 상세한 합성 경로는 하기 합성예의 반응식을 참조한다.
The organic light emitting compound represented by Chemical Formula I may be synthesized using a conventional synthetic method, and for a more detailed synthetic route of the compound, see Scheme of Synthesis Example below.
다른 일 구현예에 따른 유기발광소자는, 제1전극; 제2전극; 및 상기 제 1전극과 상기 제2전극 사이에 개재된 유기막을 포함하며, 상기 유기막이 하기 화학식 I로 표시되는 화합물을 하나 이상 포함한다.An organic light emitting device according to another embodiment, the first electrode; A second electrode; And an organic layer interposed between the first electrode and the second electrode, wherein the organic layer includes at least one compound represented by Formula (I).
<화학식 I><Formula I>
상기 화학식 I에서, A가 CH, 또는 N이며; B1, B2 및 B3가 서로 독립적으로 공유결합, 페닐렌기, 비페닐렌기 또는 9,9'-스파이로바이플루오레닐렌기이며, R1, R2 및 R3가 서로 독립적으로 , , 카바졸릴기, N-(C1-C5알킬)카바졸릴기, N-(C6-C20아릴)카바졸릴기, 치환 또는 비치환된 트리아졸기, 9,9'-디(C1-C5알킬)실라플루오레닐기, 9,9'-디(C6-C20아릴)실라플루오레닐기, 디벤조티오페닐기, 트리페닐레닐기, 9,9'-스파이로바이플루오레닐기 또는 페닐기이며, CY1, CY2, CY3가 서로 독립적으로 치환 또는 비치환된 C6-C50방향족 고리, 또는 치환 또는 비치환된 C2-C50헤테로방향족 고리이며, 단, R1, R2 및 R3가 동시에 페닐기가 아니다.
In formula (I), A is CH or N; B 1 , B 2 and B 3 are independently of each other a covalent bond, a phenylene group, a biphenylene group or a 9,9'-spirobifluorenylene group, and R 1 , R 2 and R 3 are independently of each other , , Carbazolyl group, N- (C 1 -C 5 alkyl) carbazolyl group, N- (C 6 -C 20 aryl) carbazolyl group, substituted or unsubstituted triazole group, 9,9'-di (C 1 -C 5 alkyl) silafluorenyl group, 9,9'-di (C 6 -C 20 aryl) silafluorenyl group, dibenzothiophenyl group, triphenylenyl group, 9,9'-spirobifluorenyl group Or a phenyl group, and CY1, CY2, CY3 are each independently a substituted or unsubstituted C 6 -C 50 aromatic ring, or a substituted or unsubstituted C 2 -C 50 heteroaromatic ring, provided that R 1 , R 2 and R 3 is not a phenyl group at the same time.
상기 화학식 I의 화합물은 유기발광소자의 유기막, 특히 발광층, 정공주입층, 정공수송층, 전자주입층 또는 전자수송층에 사용되기 적합하다.The compound of formula (I) is suitable for use in organic membranes of organic light emitting devices, in particular in light emitting layers, hole injection layers, hole transport layers, electron injection layers or electron transport layers.
또 다른 일구현예에 따른 유기발광소자의 구조는 매우 다양하다. 상기 제1전극과 제2전극 사이에 정공주입층, 정공수송층, 정공저지층, 전자저지층, 전자수송층 및 전자주입층으로 이루어진 군으로부터 선택된 하나 이상의 층을 더 포함할 수 있다.The structure of the organic light emitting device according to another embodiment is very diverse. The organic EL device may further include at least one layer selected from the group consisting of a hole injecting layer, a hole transporting layer, a hole blocking layer, an electron blocking layer, an electron transporting layer, and an electron injecting layer between the first electrode and the second electrode.
보다 구체적으로, 상기 유기발광소자의 구현예는 도 1a, 1b 및 1c를 참조한다. 도 1a의 유기발광소자는 제1전극/정공주입층/발광층/전자수송층/전자주입층/제2전극으로 이루어진 구조를 갖고, 도 1b의 유기발광소자는 제1전극/정공주입층/정공수송층/발광층/전자수송층/전자주입층/제2전극으로 이루어진 구조를 갖는다. 또한, 도 1c의 유기발광소자는 제1전극/정공주입층/정공수송층/발광층/정공저지층/전자수송층/전자주입층/제2전극의 구조를 갖는다. 이 때, 상기 발광층, 정공주입층 및 정공수송층 중 하나 이상은 상기 화학식 I로 표시되는 화합물을 포함할 수 있다.More specifically, the embodiment of the organic light emitting device refer to Figures 1a, 1b and 1c. The organic light emitting device of Figure 1a has a structure consisting of a first electrode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / second electrode, the organic light emitting device of Figure 1b has a first electrode / hole injection layer / hole transport layer / Light emitting layer / electron transport layer / electron injection layer / second electrode. In addition, the organic light emitting device of FIG. 1C has a structure of a first electrode / hole injection layer / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / electron injection layer / second electrode. At this time, one or more of the light emitting layer, the hole injection layer and the hole transport layer may include a compound represented by the formula (I).
상기 유기발광소자의 발광층은 적색, 녹색, 청색 또는 백색을 포함하는 인광 또는 형광 도펀트를 포함할 수 있다. 이 중, 상기 인광 도펀트는 Ir, Pt, Os, Ti, Zr, Hf, Eu, Tb 및 Tm으로 이루어진 군으로부터 선택된 하나 이상의 원소를 포함하는 유기금속화합물일 수 있다. 또한, 상기 화학식 I로 표시되는 화합물은 발광층에서 형광호스트, 형광 도펀트, 인광호스트 또는 인광도판트로 사용될 수 있다.
The emission layer of the organic light emitting diode may include a phosphorescent or fluorescent dopant including red, green, blue, or white. Among these, the phosphorescent dopant may be an organometallic compound including at least one element selected from the group consisting of Ir, Pt, Os, Ti, Zr, Hf, Eu, Tb, and Tm. In addition, the compound represented by Formula I may be used as a fluorescent host, fluorescent dopant, phosphorescent host or phosphorescent dopant in the light emitting layer.
또 다른 일구현예에 따른 유기발광소자의 제조방법을 도 1c에 도시된 유기발광소자를 참조하여, 살펴보기로 한다.A method of manufacturing an organic light emitting diode according to another embodiment will be described with reference to the organic light emitting diode illustrated in FIG. 1C.
먼저, 기판 상부에 높은 일함수를 갖는 제1전극용 물질을 증착법 또는 스퍼터링법 등에 의해 배치하여 제1전극을 형성한다. 상기 제1전극은 애노드(Anode)일 수 있다. 여기에서 기판으로는 통상적인 유기발광소자에서 사용되는 기판을 사용하는데 기계적 강도, 열적 안정성, 투명성, 표면 평활성, 취급용이성 및 방수성이 우수한 유리 기판 또는 투명 플라스틱 기판이 바람직하다. 제1전극용 물질로는 투명하고 전도성이 우수한 산화인듐주석(ITO), 산화인듐아연(IZO), 산화주석(SnO2), 산화아연(ZnO) 등을 사용할 수 있다.First, a first electrode material having a high work function on the substrate is disposed by a deposition method or a sputtering method to form a first electrode. The first electrode may be an anode. Herein, a substrate used in a conventional organic light emitting device is used, but a glass substrate or a transparent plastic substrate having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness is preferable. As the first electrode material, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2), zinc oxide (ZnO), and the like, which are transparent and have excellent conductivity, may be used.
다음으로, 상기 제1전극 상부에 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 다양한 방법을 이용하여 정공주입층(HIL)을 형성할 수 있다.Next, a hole injection layer HIL may be formed on the first electrode by using various methods such as vacuum deposition, spin coating, casting, and LB.
진공증착법에 의하여 정공주입층을 형성하는 경우, 그 증착 조건은 정공주입층의 재료로서 사용하는 화합물, 목적으로 하는 정공주입층의 구조 및 열적 특성 등에 따라 다르지만, 일반적으로 증착온도 100 내지 500℃, 진공도 10-8 내지 10-3torr, 증착속도 0.01 내지 100Å/sec, 막 두께는 통상 100Å 내지 10㎛ 범위에서 적절히 선택하는 것이 바람직하다.In the case of forming the hole injection layer by vacuum deposition, the deposition conditions vary depending on the compound used as the material of the hole injection layer, the structure and thermal properties of the hole injection layer, and the like. It is preferable that a vacuum degree of 10 -8 to 10 -3 torr, a deposition rate of 0.01 to 100 Pa / sec, and a film thickness are appropriately selected in the range of usually 100 Pa to 10 µm.
스핀코팅법에 의하여 정공주입층을 형성하는 경우, 그 코팅 조건은 정공주입층의 재료로서 사용하는 화합물, 목적하는 하는 정공주입층의 구조 및 열적 특성에 따라 상이하지만, 약 2000rpm 내지 5000rpm의 코팅 속도, 코팅 후 용매 제거를 위한 열처리 온도는 약 80℃ 내지 200℃의 온도 범위 에서 적절히 선택하는 것이 바람직하다.When the hole injection layer is formed by the spin coating method, the coating conditions vary depending on the compound used as the material of the hole injection layer, the structure and the thermal properties of the desired hole injection layer, but the coating speed is preferably from about 2000 rpm to 5000 rpm , And the heat treatment temperature for removing the solvent after coating is suitably selected within a temperature range of about 80 캜 to 200 캜.
상기 정공주입층 물질은 전술한 바와 같이 화학식 I로 표시되는 화합물일 수 있다. 또는, 예를 들어, 미국특허 제4,356,429호에 개시된 구리프탈로시아닌 등의 프탈로시아닌 화합물 또는 Advanced Material, 6, p.677(1994)에 기재되어 있는 스타버스트형 아민 유도체류인 TCTA, m-MTDATA, m-MTDAPB, 2-TNATA(4,4',4"-tris(N-(2-naphtyl)-N-phenylamino)triphenylamine:4,4',4"-트리스(N-(나프틸)-N-페닐아미노)트리페닐아민), DNTPD(4,4'-bis-(N-{4-[N'-(3-methylphenyl-N'-phenylamino]phenyl)-N-phenylamino)biphenyl}, 용해성이 있는 전도성 고분자인 Pani/DBSA (Polyaniline/Dodecylbenzenesulfonic acid:폴리아닐린/도데실벤젠술폰산) 또는 PEDOT/PSS (Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate):폴리(3,4-에틸렌디옥시티오펜)/폴리(4-스티렌술포네이트)), PANI/CSA (Polyaniline/Camphor sulfonicacid:폴리아닐린/캠퍼술폰산) 또는 PANI/PSS (Polyaniline)/Poly(4-styrenesulfonate):폴리아닐린)/폴리(4-스티렌술포네이트)) 등과 같은 공지된 정공주입 물질을 사용할 수 있다.The hole injection layer material may be a compound represented by Formula (I) as described above. Or phthalocyanine compounds such as copper phthalocyanine disclosed in US Pat. No. 4,356,429 or the starburst type amine derivatives described in Advanced Material, 6, p.677 (1994), for example, TCTA, m-MTDATA, m-. MTDAPB, 2-TNATA (4,4 ', 4 "-tris (N- (2-naphtyl) -N-phenylamino) triphenylamine: 4,4', 4" -tris (N- (naphthyl) -N-phenyl Amino) triphenylamine), DNTPD (4,4'-bis- (N- {4- [N '-(3-methylphenyl-N'-phenylamino] phenyl) -N-phenylamino) biphenyl}, soluble conductivity Polymer Pani / DBSA (Polyaniline / Dodecylbenzenesulfonic acid: polyaniline / dodecylbenzenesulfonic acid) or PEDOT / PSS (Poly (3,4-ethylenedioxythiophene) / Poly (4-styrenesulfonate): poly (3,4-ethylenedioxythiophene) Poly (4-styrenesulfonate)), PANI / CSA (Polyaniline / Camphor sulfonicacid: polyaniline / camphorsulfonic acid) or PANI / PSS (Polyaniline) / Poly (4-styrenesulfonate): polyaniline) / poly (4-styrenesulfonate Known hole injection materials such as It can be used.
PANI/DBSA PEDOT/PSSPANI / DBSA PEDOT / PSS
상기 정공주입층의 두께는 약 100Å 내지 10000Å, 바람직하게는 100Å 내지 1000Å일 수 있다. 상기 정공주입층의 두께가 100Å 미만인 경우, 정공주입 특성이 저하될 수 있으며, 상기 정공주입층의 두께가 10000Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The thickness of the hole injection layer may be about 100 Å to 10000 Å, preferably 100 Å to 1000 Å. This is because when the thickness of the hole injection layer is less than 100 kV, the hole injection characteristic may be lowered, and when the thickness of the hole injection layer exceeds 10000 kV, the driving voltage may increase.
다음으로, 상기 정공주입층 상부에 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 다양한 방법을 이용하여 정공수송층(HTL)을 형성할 수 있다. 진공증착법 및 스핀팅법에 의하여 정공수송층을 형성하는 경우, 그 증착조건 및 코팅조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건범위 중에서 선택된다.Next, a hole transport layer (HTL) may be formed on the hole injection layer by using various methods such as vacuum deposition, spin coating, cast, and LB. In the case of forming the hole transporting layer by the vacuum deposition method and the sputtering method, the deposition conditions and the coating conditions vary depending on the compound used, but are generally selected from substantially the same range of conditions as the formation of the hole injection layer.
상기 정공수송층 물질은 전술한 바와 같이 화학식 I의 화합물을 포함할 수 있다. 다르게는, 예를 들어, N-페닐카르바졸, 폴리비닐카르바졸 등의 카르바졸 유도체, N,N'-비스(3-메틸페닐)-N,N'-디페닐-[1,1-비페닐]-4,4'-디아민(TPD), N,N'-디(나프탈렌-1-일)-N,N'-디페닐 벤지딘(α-NPD) 등의 방향족 축합환을 가지는 통상적인 아민 유도체 등과 같은 공지된 정공수송 물질을 사용할 수 있다.The hole transport layer material may comprise a compound of formula (I) as described above. Alternatively, for example, carbazole derivatives such as N-phenylcarbazole, polyvinylcarbazole, N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1,1-biphenyl ] 4,4'-diamine (TPD), N, N'-di (naphthalen-1-yl) -N, N'-diphenyl benzidine (α-NPD), and other conventional amine derivatives having aromatic condensed rings Known hole transport materials such as the like may be used.
상기 정공수송층의 두께는 약 50Å 내지 1000Å, 바람직하게는 100Å 내지 600Å일 수 있다. 상기 정공수송층의 두께가 50Å 미만인 경우, 정공수송 특성이 저하될 수 있으며, 상기 정공수송층의 두께가 1000Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The hole transport layer may have a thickness of about 50 kPa to 1000 kPa, preferably 100 kPa to 600 kPa. When the thickness of the hole transporting layer is less than 50 Å, the hole transporting property may be degraded. When the thickness of the hole transporting layer is more than 1000 Å, the driving voltage may increase.
다음으로 상기 정공수송층 상부에 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 방법을 이용하여 발광층(EML)을 형성할 수 있다. 진공증착법 및 스핀코팅법에 의해 발광층을 형성하는 경우, 그 증착조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건범위 중에서 선택된다.Next, the light emitting layer EML may be formed on the hole transport layer by using a vacuum deposition method, a spin coating method, a cast method, an LB method, or the like. When the light emitting layer is formed by the vacuum deposition method or the spin coating method, the deposition conditions vary depending on the compound used, but are generally selected from the ranges of conditions substantially the same as those of forming the hole injection layer.
상기 발광층은 전술한 바와 같이 상기 화학식 I로 표시되는 화합물을 포함할 수 있다. 이 때, 화학식 I의 화합물에 적합한 공지의 호스트 재료와 함께 사용될 수 있거나, 공지의 도펀트 재료와 함께 사용될 수 있다. 상기 화학식 I의 화합물을 단독으로 사용하는 것도 가능하다. 호스트 재료의 경우, 예를 들면, Alq3(tris(8-hydroxy-quinolatealuminium) 또는 CBP(4,4'-N,N'-디카바졸-비페닐), 또는 PVK(폴리(n-비닐카바졸)) 등을 사용할 수 있다.The light emitting layer may include the compound represented by Formula I as described above. At this time, it may be used with a known host material suitable for the compound of the formula (I), or may be used with a known dopant material. It is also possible to use the compounds of formula (I) alone. For host materials, for example, Alq3 (tris (8-hydroxy-quinolatealuminium) or CBP (4,4'-N, N'-dicarbazole-biphenyl), or PVK (poly (n-vinylcarbazole) ) Can be used.
PVKPVK
도펀트 재료의 경우, 형광 도펀트로서는 이데미츠사(Idemitsu사)에서 구입 가능한 IDE102, IDE105 및 하야시바라사에서 구입 가능한 C545T 등을 사용할 수 있으며, 인광 도펀트로서는 적색 인광 도펀트 PtOEP, UDC사의 RD 61, 녹색 인광 도판트 Ir(PPy)3(PPy=2-phenylpyridine), 청색 인광 도펀트인 F2Irpic, UDC사의 적색 인광 도펀트 RD 61 등을 사용할 수 있다. MQD(N-methylquinacridone), 쿠마린(Coumarine)유도체 등도 사용할 수 있다. 도핑 농도는 특별히 제한 되지 않으나 통상적으로 호스트100 중량부를 기준으로 하여 상기 도펀트의 함량은 0.01 ~ 15 중량부이다.In the case of the dopant material, as the fluorescent dopant, IDE102, IDE105, and C545T, available from Hayashibara, can be used. Ir (PPy) 3 (PPy = 2-phenylpyridine), F 2 Irpic which is a blue phosphorescent dopant, a red phosphorescent dopant RD 61 manufactured by UDC, and the like can be used. MQD (N-methylquinacridone), coumarine derivatives and the like can also be used. Doping concentration is not particularly limited, but the content of the dopant is generally 0.01 to 15 parts by weight based on 100 parts by weight of the host.
상기 발광층의 두께는 약 100Å 내지 1000Å, 바람직하게는 200Å 내지 600Å일 수 있다. 상기 발광층의 두께가 100Å 미만인 경우, 발광 특성이 저하될 수 있으며, 상기 발광층의 두께가 1000Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The thickness of the light emitting layer may be about 100 Å to 1000 Å, preferably 200 Å to 600 Å. When the thickness of the light emitting layer is less than 100 Å, the light emitting characteristics may be degraded. If the thickness of the light emitting layer is more than 1000 Å, the driving voltage may increase.
발광층에 발광 화합물이 인광 도펀트와 함께 사용할 경우에는 삼중항 여기자 또는 정공이 전자수송층으로 확산되는 현상을 방지하기 위하여, 상기 발광층 상부에 진공증착법, 스핀코팅법, 캐스트법, LB법 등과 같은 방법을 이용하여 정공저지층(HBL)을 형성할 수 있다. 진공증착법 및 스핀코팅법에 의해 정공저지층을 형성하는 경우, 그 조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건범위 중에서 선택된다. 사용가능한 공지의 정공저지재료, 예를 들면 옥사디아졸 유도체나 트리아졸 유도체, 페난트롤린 유도체, BCP 등을 들 수 있다.When a light emitting compound is used with a phosphorescent dopant in the light emitting layer, a method such as vacuum deposition, spin coating, cast method, LB method, etc. is used on the light emitting layer to prevent the triplet excitons or holes from diffusing into the electron transport layer. The hole blocking layer HBL can be formed. In the case of forming the hole blocking layer by the vacuum deposition method and the spin coating method, the conditions vary depending on the compound used, but are generally selected from substantially the same range of conditions as the formation of the hole injection layer. Known hole blocking materials that can be used include, for example, oxadiazole derivatives, triazole derivatives, phenanthroline derivatives, and BCP.
상기 정공저지층의 두께는 약 50Å 내지 1000Å, 바람직하게는 100Å 내지 300Å일 수 있다. 상기 정공저지층의 두께가 50Å 미만인 경우, 정공저지 특성이 저하될 수 있으며, 상기 정공저지층의 두께가 1000Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The hole blocking layer may have a thickness of about 50 kPa to 1000 kPa, preferably 100 kPa to 300 kPa. This is because when the thickness of the hole blocking layer is less than 50 kV, the hole blocking property may be deteriorated. When the thickness of the hole blocking layer is more than 1000 kV, the driving voltage may increase.
상기 정공저지층이 생략될 경우 도 1a에 도시된 구조를 가지는 유기발광소자가 얻어진다.When the hole blocking layer is omitted, an organic light emitting device having the structure shown in FIG. 1A is obtained.
다음으로 전자수송층(ETL)을 진공증착법, 또는 스핀코팅법, 캐스트법 등의 다양한 방법을 이용하여 형성한다. 진공증착법 및 스핀코팅법에 의해 전자수송층을 형성하는 경우, 그 조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건범위 중에서 선택된다. 예를 들어, 상기 화학식 I의 화합물이 전자수송층에 사용될 수 있다. 상기 전자수송층 재료는 전자주입전극(Cathode)로부터 주입된 전자를 안정하게 수송하는 기능을 하는 것으로서 퀴놀린 유도체, 특히 트리스(8-퀴놀리노레이트)알루미늄(Alq3), TAZ, Balq 등과 같은 공지의 재료를 사용할 수도 있다.Next, an electron transport layer (ETL) is formed by various methods such as a vacuum evaporation method, a spin coating method, and a casting method. In the case of forming the electron transporting layer by the vacuum deposition method and the spin coating method, the conditions vary depending on the compound used, but generally, the conditions are substantially the same as those for forming the hole injection layer. For example, the compound of formula I may be used in the electron transport layer. The electron transport layer material functions to stably transport electrons injected from an electron injection electrode (Cathode), and a quinoline derivative, particularly a known material such as tris (8-quinolinorate) aluminum (Alq3), TAZ, Balq, etc. Can also be used.
PBDPBD
상기 전자수송층의 두께는 약 100Å 내지 1000Å, 바람직하게는 200Å 내지 500Å일 수 있다. 상기 전자수송층의 두께가 100Å 미만인 경우, 전자수송 특성이 저하될 수 있으며, 상기 전자수송층의 두께가 1000Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The electron transport layer may have a thickness of about 100 kPa to 1000 kPa, preferably 200 kPa to 500 kPa. When the thickness of the electron transporting layer is less than 100 angstroms, the electron transporting characteristics may be deteriorated. When the thickness of the electron transporting layer exceeds 1000 angstroms, the driving voltage may increase.
또한 전자수송층 상부에 음극으로부터 전자의 주입을 용이하게 하는 기능을 가지는 물질인 전자주입층(EIL)이 적층될 수 있으며 이는 특별히 재료를 제한하지 않는다.Further, an electron injection layer (EIL), which is a material having a function of facilitating the injection of electrons from the cathode, may be laminated on the electron transporting layer, which is not particularly limited.
전자 주입층으로서는 LiF, NaCl, CsF, Li2O, BaO 등과 같은 전자주입층 형성 재료로서 공지된 임의의 물질을 이용할 수 있다. 상기 전자주입층의 증착조건은 사용하는 화합물에 따라 다르지만, 일반적으로 정공주입층의 형성과 거의 동일한 조건범위 중에서 선택된다.As the electron injection layer, any material known as an electron injection layer forming material such as LiF, NaCl, CsF, Li 2 O, BaO or the like can be used. The deposition conditions of the electron injection layer vary depending on the compound used, but are generally selected from substantially the same range of conditions as the formation of the hole injection layer.
상기 전자주입층의 두께는 약 1Å 내지 100Å, 바람직하게는 5Å 내지 50Å일 수 있다. 상기 전자주입층의 두께가 1Å 미만인 경우, 전자주입 특성이 저하될 수 있으며, 상기 전자주입층의 두께가 100Å를 초과하는 경우, 구동전압이 상승할 수 있기 때문이다.The thickness of the electron injection layer may be about 1 A to 100 A, preferably 5 A to 50 A. This is because, when the thickness of the electron injection layer is less than 1 kW, the electron injection characteristic may be deteriorated, and when the thickness of the electron injection layer exceeds 100 kW, the driving voltage may increase.
마지막으로 전자주입층 상부에 진공증착법이나 스퍼터링법 등의 방법을 이용하여 제2전극을 형성할 수 있다. 상기 제2전극은 캐소드(Cathode)로 사용될 수 있다. 상기 제2전극 형성용 금속으로는 낮은 일함수를 가지는 금속, 합금, 전기전도성 화합물 및 이들의 혼합물을 사용할 수 있다. 구체적인 예로서는 리튬(Li), 마그네슘(Mg), 알루미늄(Al), 알루미늄-리튬(Al-Li), 칼슘(Ca), 마그네슘-인듐(Mg-In), 마그네슘-은(Mg-Ag)등을 들 수 있다. 또한 전면 발광소자를 얻기 위하여 ITO, IZO를 사용한 투과형 캐소드를 사용할 수도 있다.
Finally, the second electrode may be formed on the electron injection layer by using a vacuum deposition method or a sputtering method. The second electrode may be used as a cathode. As the metal for forming the second electrode, a metal, an alloy, an electrically conductive compound having a low work function, and a mixture thereof may be used. Specific examples include lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and the like. Can be mentioned. In addition, a transmissive cathode using ITO and IZO may be used to obtain the front light emitting device.
이하에서, 본 발명의 합성예 및 실시예를 구체적으로 예시하지만, 본 발명이 하기의 합성예 및 실시예로 한정되는 것은 아니다.Hereinafter, Synthesis Examples and Examples of the present invention will be specifically described, but the present invention is not limited to the following Synthesis Examples and Examples.
[합성예 1] 화합물 [1]의 합성 [Synthesis Example 1] Synthesis of compound [1]
250mL 둥근바닥플라스크에 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol), 9H-카바졸 3.27g (19.55mmol), 요오드화(I)구리 372mg(1.95mmol), 인산칼륨(K3PO4) 8.30g (39.1mmol), 및 1,2-에틸렌디아민 1.96mL (29.33mmol)을 투입하고 질소기류 하에서 톨루엔 150mL 로 120℃에서 12시간 동안 환류 교반시키며 반응시켰다.5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole, 3.27 g (19.55 mmol) of 9H-carbazole, 372 mg of copper iodide in a 250 mL round bottom flask (1.95 mmol), 8.30 g (39.1 mmol) of potassium phosphate (K 3 PO 4 ), and 1.96 mL (29.33 mmol) of 1,2-ethylenediamine were added thereto, and the mixture was stirred at reflux for 12 hours at 120 ° C. with 150 mL of toluene under a nitrogen stream. And reacted.
반응 종료후 반응액을 상온으로 냉각시킨 후 반응액을 묽은 염산수용액 200mL 에 부어 층분리시켰다. 유기층을 분리하고 포화 소금물 200mL로 세척하였다. 세척된 유기층을 무수황산 마그네슘으로 건조하여 여과하였다. 여과액을 감압 농축한 후, 디클로로메탄과 메탄올로 재결정화하여 흰색 고체의 목적 화합물 [1] 4.5g (60%)을 수득하였다.After the reaction was completed, the reaction solution was cooled to room temperature, and the reaction solution was poured into 200 mL of diluted aqueous hydrochloric acid solution to separate the layers. The organic layer was separated and washed with 200 mL saturated brine. The washed organic layer was dried over anhydrous magnesium sulfate and filtered. The filtrate was concentrated under reduced pressure, and then recrystallized from dichloromethane and methanol to obtain 4.5 g (60%) of the title compound [1] as a white solid.
1H NMR (300 MHz, CDCl3) : δ 8.50(d, 1H), 8.15(m, 2H), 8.10(m, 2H), 7.65~7.20(m, 13H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50 (d, 1H), 8.15 (m, 2H), 8.10 (m, 2H), 7.65 ~ 7.20 (m, 13H)
MS/FAB : 386(M+)
MS / FAB: 386 (M + )
[합성예 2] 화합물 [2]의 합성 [Synthesis Example 2] Synthesis of compound [2]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [2-1]을 사용하여 목적 화합물 [2] 6.5g (60%)을 수득하였다.Target compound [2] 6.5 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [2-1] in the same manner as in Synthesis example 1 g (60%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.49(d, 2H), 8.20(m, 2H), 7.95m, 2H), 7.61~7.23(m, 19H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.49 (d, 2H), 8.20 (m, 2H), 7.95m, 2H), 7.61 ~ 7.23 (m, 19H)
MS/FAB : 551(M+)
MS / FAB: 551 (M + )
[합성예 3] 화합물 [3]의 합성 [Synthesis Example 3] Synthesis of compound [3]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [3-1]을 사용하여 목적 화합물 [3] 5.5g (51%)을 수득하였다.Target compound [3] 5.5 using 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [3-1] in the same manner as in Synthesis example 1 5.5 g (51%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.51(m, 2H), 8.25(m, 2H), 8.10(d, 1H), 7.90(m, 2H), 7.61~7.21(m, 18H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.51 (m, 2H), 8.25 (m, 2H), 8.10 (d, 1H), 7.90 (m, 2H), 7.61 ~ 7.21 (m, 18H)
MS/FAB : 551(M+)
MS / FAB: 551 (M + )
[합성예 4] 화합물 [4]의 합성 [Synthesis Example 4] Synthesis of compound [4]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [4-1]을 사용하여 목적 화합물 [4] 7.0g (65%)을 수득하였다.Target compound [4] 7.0 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [4-1] in the same manner as in Synthesis example 1 7.0 g (65%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.54(d, 1H), 8.25(m, 2H), 8.10(m, 2H), 7.65~7.20(m, 20H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.54 (d, 1H), 8.25 (m, 2H), 8.10 (m, 2H), 7.65 ~ 7.20 (m, 20H)
MS/FAB : 551(M+)
MS / FAB: 551 (M + )
[합성예 5] 화합물 [5]의 합성[Synthesis Example 5] Synthesis of compound [5]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [5-1]을 사용하여 목적 화합물 [5] 5.1g (52%)을 수득하였다.Target compound [5] 5.1 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [5-1] in the same manner as in Synthesis example 1 5.1 g (52%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.55(d, 1H), 8.25(m, 2H), 8.10~8.00(m, 3H), 7.75(d, 1H), 7.60~7.21(m, 13H), 1.75(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.55 (d, 1H), 8.25 (m, 2H), 8.10 ~ 8.00 (m, 3H), 7.75 (d, 1H), 7.60 ~ 7.21 (m, 13H) , 1.75 (s, 6H)
MS/FAB : 502(M+)
MS / FAB: 502 (M + )
[합성예 6] 화합물 [6]의 합성[Synthesis Example 6] Synthesis of compound [6]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [6-1]을 사용하여 목적 화합물 [6] 6.7g (68%)을 수득하였다.Target compound [6] 6.7 using 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [6-1] in the same manner as in Synthesis example 1 g (68%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.51(d, 1H), 8.27(m, 2H), 8.11(m, 2H), 7.95(d, 1H), 7.64~7.23(m, 14H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.51 (d, 1H), 8.27 (m, 2H), 8.11 (m, 2H), 7.95 (d, 1H), 7.64 ~ 7.23 (m, 14H)
MS/FAB : 502(M+)
MS / FAB: 502 (M + )
[합성 예 7] 화합물 [7]의 합성Synthesis Example 7 Synthesis of Compound [7]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [7-1]을 사용하여 목적 화합물 [7] 5.7g (59%)을 수득하였다.Using the same method as in Synthesis Example 1, 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and Compound [7-1] were used as the target compound [7] 5.7 g (59%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.50(m, 2H), 8.27(m, 2H), 8.10~8.00(m, 3H), 7.60~7.20(m, 13H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50 (m, 2H), 8.27 (m, 2H), 8.10 to 8.00 (m, 3H), 7.60 to 7.20 (m, 13H)
MS/FAB : 492(M+)
MS / FAB: 492 (M + )
[합성예 8] 화합물 [8]의 합성[Synthesis Example 8] Synthesis of compound [8]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [8-1]을 사용하여 목적 화합물 [8] 5.1g (53%)을 수득하였다.Target compound [8] 5.1 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [8-1] in the same manner as in Synthesis example 1 g (53%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.50(m, 2H), 8.29(m, 2H), 7.99~7.90(m, 3H), 7.62~7.23(m, 13H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50 (m, 2H), 8.29 (m, 2H), 7.99 ~ 7.90 (m, 3H), 7.62 ~ 7.23 (m, 13H)
MS/FAB : 492(M+)
MS / FAB: 492 (M + )
[합성예 9] 화합물 [9]의 합성[Synthesis Example 9] Synthesis of compound [9]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [9-1]을 사용하여 목적 화합물 [9] 6.3g (65%)을 수득하였다.Target compound [9] 6.3 using 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [9-1] in the same manner as in Synthesis example 1 g (65%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.51~8.49(m, 2H), 8.25(m, 2H), 7.95(m, 2H), 7.80(s, 2H), 7.55~7.24(m, 12H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.51-8.49 (m, 2H), 8.25 (m, 2H), 7.95 (m, 2H), 7.80 (s, 2H), 7.55-7.24 (m, 12H)
MS/FAB : 492(M+)
MS / FAB: 492 (M + )
[합성예 10] 화합물 [10]의 합성[Synthesis Example 10] Synthesis of Compound [10]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [10-1]을 사용하여 목적 화합물 [10] 5.9g (58%)을 수득하였다.Target compound [10] 5.9 using 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [10-1] in the same manner as in Synthesis example 1 g (58%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.56(d, 1H), 8.30(m, 3H), 7.90(m, 3H), 7.63~7.23(m, 13H), 0.65(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.56 (d, 1H), 8.30 (m, 3H), 7.90 (m, 3H), 7.63 ~ 7.23 (m, 13H), 0.65 (s, 6H)
MS/FAB : 518(M+)
MS / FAB: 518 (M + )
[합성예 11] 화합물 [11]의 합성 [Synthesis Example 11] Synthesis of compound [11]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [11-1]을 사용하여 목적 화합물 [11] 6.9g (68%)을 수득하였다.Using the same method as in Synthesis Example 1, 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [11-1] were used as the target compound [11] 6.9 g (68%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.57(d, 1H), 8.25(m, 2H), 7.91(m, 3H), 7.70(s, 1H), 7.65~7.27(m, 13H), 0.66(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.57 (d, 1H), 8.25 (m, 2H), 7.91 (m, 3H), 7.70 (s, 1H), 7.65 ~ 7.27 (m, 13H), 0.66 (s, 6H)
MS/FAB : 518(M+)
MS / FAB: 518 (M + )
[[ 합성예Synthetic example 12] 화합물 [12]의 합성 12] Synthesis of Compound [12]
합성예 1 과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [12-1]을 사용하여 목적 화합물 [12] 6.1g (51%)을 수득하였다.6.1 g of the target compound [12] using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [12-1] in the same manner as in Synthesis example 1. g (51%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.53(s, 1H), 8.47(m, 2H), 8.12~8.07(m, 3H), 7.74~7.71(m, 2H), 7.62~7.41(m, 12H), 7.26~7.21(m, 2H), 1.72(s, 12H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.53 (s, 1H), 8.47 (m, 2H), 8.12 to 8.07 (m, 3H), 7.74 to 7.71 (m, 2H), 7.62 to 7.41 (m, 12H), 7.26 ~ 7.21 (m, 2H), 1.72 (s, 12H)
MS/FAB : 618(M+)
MS / FAB: 618 (M + )
[합성예 13] 화합물 [13]의 합성[Synthesis Example 13] Synthesis of compound [13]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [13-1]을 사용하여 목적 화합물 [13] 6.7g (56%)을 수득하였다.Using the same method as in Synthesis Example 1, 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole and compound [13-1] were used as the target compound [13] 6.7 g (56%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.83(s, 1H), 8.45(m, 2H), 8.15~8.09(m, 3H), 7.65~7.43(m, 14H), 7.25~7.21(m, 2H), 1.72(s, 12H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.83 (s, 1H), 8.45 (m, 2H), 8.15 ~ 8.09 (m, 3H), 7.65 ~ 7.43 (m, 14H), 7.25 ~ 7.21 (m, 2H), 1.72 (s, 12H)
MS/FAB : 618(M+)
MS / FAB: 618 (M + )
[합성예 14] 화합물 [14]의 합성[Synthesis Example 14] Synthesis of compound [14]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [14-1]을 사용하여 목적 화합물 [14] 6.0g (62%)을 수득하였다.Target compound [14] 6.0 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [14-1] in the same manner as in Synthesis example 1. g (62%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.56~8.54(m, 2H), 8.39~8.36(m, 2H), 8.11~8.07(m, 2H), 7.66~7.24(m, 17H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.56 ~ 8.54 (m, 2H), 8.39 ~ 8.36 (m, 2H), 8.11 ~ 8.07 (m, 2H), 7.66 ~ 7.24 (m, 17H)
MS/FAB : 501(M+)
MS / FAB: 501 (M + )
[합성예 15] 화합물 [15]의 합성[Synthesis Example 15] Synthesis of compound [15]
합성예 1과 동일한 방법으로 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol) 및 화합물 [15-1]을 사용하여 목적 화합물 [15] 5.7g (41%)을 수득하였다.Target compound [15] 5.7 using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol) and compound [15-1] in the same manner as in Synthesis example 1 g (41%) was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.55~8.51(m, 3H), 8.13~8.09(m, 2H), 7.77~7.72(m, 3H), 7.64~7.23(m, 24H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.55 ~ 8.51 (m, 3H), 8.13 ~ 8.09 (m, 2H), 7.77 ~ 7.72 (m, 3H), 7.64 ~ 7.23 (m, 24H)
MS/FAB : 716(M+)
MS / FAB: 716 (M + )
[합성예 16] 화합물 [16]의 합성[Synthesis Example 16] Synthesis of compound [16]
합성예 1과 동일한 방법으로 2-클로로-1,5-디페닐-1H-이미다졸 5.0g (19.63mmol) 및 화합물 [3-1]을 사용하여 목적 화합물 [16] 6.3g (59%)을 수득하였다.In the same manner as in Synthesis Example 1, 6.3 g (59%) of the target compound [16] was obtained by using 5.0 g (19.63 mmol) of 2-chloro-1,5-diphenyl-1H-imidazole and compound [3-1]. Obtained.
1H NMR (300 MHz, CDCl3) : δ 8.56~8.54(m, 2H), 8.13~8.10(m, 3H), 7.75~7.71(m, 2H), 7.67~7.22(m, 19H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.56 ~ 8.54 (m, 2H), 8.13 ~ 8.10 (m, 3H), 7.75 ~ 7.71 (m, 2H), 7.67 ~ 7.22 (m, 19H)
MS/FAB : 550(M+)
MS / FAB: 550 (M + )
[합성예 17] 화합물 [17]의 합성[Synthesis Example 17] Synthesis of Compound [17]
합성예 1과 동일한 방법으로 5-클로로-1,2-디페닐-1H-이미다졸 5.0g (19.63mmol) 및 화합물 [3-1]을 사용하여 목적 화합물 [17] 6.8g (63%)을 수득하였다.In the same manner as in Synthesis Example 1, 6.8 g (63%) of the target compound [17] was obtained by using 5.0 g (19.63 mmol) of 5-chloro-1,2-diphenyl-1H-imidazole and compound [3-1]. Obtained.
1H NMR (300 MHz, CDCl3) : δ 8.56~8.54(m, 2H), 8.15~8.11(m, 3H), 7.74~7.70(m, 2H), 7.65~7.24(m, 19H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.56 ~ 8.54 (m, 2H), 8.15 ~ 8.11 (m, 3H), 7.74 ~ 7.70 (m, 2H), 7.65 ~ 7.24 (m, 19H)
MS/FAB : 550(M+)
MS / FAB: 550 (M + )
[합성예 18] 화합물 [18]의 합성[Synthesis Example 18] Synthesis of Compound [18]
합성예 1 과 동일한 방법으로 2-클로로-1,4,5-트리페닐-1H-이미다졸 5.0g (15.11mmol) 및 화합물 [3-1]을 사용하여 목적 화합물 [18] 4.3g (46%)을 수득하였다.4.3 g (46%) of the target compound [18] using 5.0 g (15.11 mmol) of 2-chloro-1,4,5-triphenyl-1H-imidazole and compound [3-1] in the same manner as in Synthesis example 1. ) Was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.55~8.53(m, 2H), 8.15~8.10(m, 3H), 7.76~7.73(m, 2H), 7.66~7.21(m, 23H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.55 ~ 8.53 (m, 2H), 8.15 ~ 8.10 (m, 3H), 7.76 ~ 7.73 (m, 2H), 7.66 ~ 7.21 (m, 23H)
MS/FAB : 626(M+)
MS / FAB: 626 (M + )
[[ 합성예Synthetic example 19] 화합물 [19]의 합성 19] Synthesis of Compound [19]
합성예 1과 동일한 방법으로 9H-카바졸 및 1-브로모-3-아이오도벤젠으로부터 제조된 화합물[19-1], n-부틸리튬 및 트리메틸보레이트를 사용하여 제조된 [19-2]와 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol), 테트라키스 (트리페닐포스파이트)팔라듐(Ⅱ), 탄산칼륨 및 톨루엔을 사용하여 목적 화합물 [19] 5.2g (58%)을 수득하였다.[19-2] prepared using compound [19-1], n-butyllithium and trimethylborate prepared from 9H-carbazole and 1-bromo-3-iodobenzene in the same manner as in Synthesis example 1 Target compound using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol), tetrakis (triphenylphosphite) palladium (II), potassium carbonate and toluene [19] 5.2 g (58%) were obtained.
1H NMR (300 MHz, CDCl3) : δ 8.54(d, 1H), 8.44~8.39(m, 3H), 8.14~8.11(m, 2H), 7.81(d, 1H), 7.68~7.23(m, 15H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.54 (d, 1H), 8.44-8.39 (m, 3H), 8.14-8.11 (m, 2H), 7.81 (d, 1H), 7.68-7.33 (m, 15H)
MS/FAB : 462(M+)
MS / FAB: 462 (M + )
[합성예 20] 화합물 [20]의 합성 [Synthesis Example 20] Synthesis of compound [20]
합성예 1 과 동일한 방법으로 9H-카바졸 및 1-브로모-4-아이오도벤젠으로부터 제조된 화합물[20-1], n-부틸리튬 및 트리메틸보레이트를 사용하여 얻은 화합물[20-2], 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol), 테트라키스 (트리페닐포스파이트)팔라듐(Ⅱ), 탄산칼륨 및 톨루엔을 사용하여 목적화합물 [20] 5.8g (65%)을 수득하였다.Compound [20-1] prepared from 9H-carbazole and 1-bromo-4-iodobenzene in the same manner as in Synthesis example 1, compound obtained using n-butyllithium and trimethylborate [20-2], Target compound using 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol), tetrakis (triphenylphosphite) palladium (II), potassium carbonate and toluene [20] 5.8 g (65%) were obtained.
1H NMR (300 MHz, CDCl3) : δ 8.56~8.54(m, 2H), 8.28~8.25(m, 3H), 7.95~7.92(m, 2H), 7.78~7.75(m, 2H), 7.69~7.25(m, 22) 1 H NMR (300 MHz, CDCl 3 ): δ 8.56 ~ 8.54 (m, 2H), 8.28 ~ 8.25 (m, 3H), 7.95 ~ 7.92 (m, 2H), 7.78 ~ 7.75 (m, 2H), 7.69 ~ 7.25 (m, 22)
MS/FAB : 627(M+)
MS / FAB: 627 (M + )
[합성예 21] 화합물 [21]의 합성[Synthesis Example 21] Synthesis of Compound [21]
합성예 1과 동일한 방법으로 9H-카바졸, 4-브로모-4'-아이오도바이페닐로부터 제조된 화합물[21-1], n-부틸리튬 및 트리메틸보레이트를 사용하여 제조된 화합물[21-2], 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol), 테트라키스(트리페닐포스피노)팔라듐(0), 탄산칼륨 및 톨루엔을 사용하여 목적 화합물 [21] 7.5g (55%)을 수득하였다.Compound [21-1] prepared from 9H-carbazole, 4-bromo-4'-iodobiphenyl, n-butyllithium and trimethylborate [21-2] in the same manner as in Synthesis example 1 ], 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 5.0 g (19.55 mmol), tetrakis (triphenylphosphino) palladium (0), potassium carbonate and toluene 7.5 g (55%) of the title compound [21] were obtained.
1H NMR (300 MHz, CDCl3) : δ 8.54~8.52(m, 2H), 8.29~8.24(m, 3H), 7.96~7.93(m, 2H), 7.86~7.78(m, 4H), 7.64~7.23(m, 22H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.54 ~ 8.52 (m, 2H), 8.29 ~ 8.24 (m, 3H), 7.96 ~ 7.93 (m, 2H), 7.86 ~ 7.78 (m, 4H), 7.64 ~ 7.23 (m, 22 H)
MS/FAB : 703(M+)
MS / FAB: 703 (M + )
[합성예 22] 화합물 [22]의 합성[Synthesis Example 22] Synthesis of compound [22]
합성예 1과 동일한 방법으로 11-페닐-11,12-디하이드로인돌로[2,3-a]카바졸 및 1-브로모-3-아이오도벤젠으로부터 제조된 화합물 [22-1], n-부틸리튬 및 트리메틸보레이트를 사용하여 얻은 화합물 [22-2]와 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5.0g (19.55mmol), 테트라키스 (트리페닐포스피노)팔라듐(0), 탄산칼륨 및 톨루엔을 사용하여 목적 화합물 [22] 2.6g (41%)을 수득하였다.Compound [22-1], n prepared from 11-phenyl-11,12-dihydroindolo [2,3-a] carbazole and 1-bromo-3-iodobenzene in the same manner as in Synthesis example 1 Compound [22-2] obtained using -butyllithium and trimethylborate, 5.0 g (19.55 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole, tetrakis (triphenyl Phosino) palladium (0), potassium carbonate and toluene were used to give 2.6 g (41%) of the desired compound [22].
1H NMR (300 MHz, CDCl3) : δ 8.55~8.53(m, 2H), 8.31~8.26(m, 3H), 8.11~8.08(m, 2H), 7.95~7.91(m, 2H), 7.68~7.29(m, 20H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.55 ~ 8.53 (m, 2H), 8.31 ~ 8.26 (m, 3H), 8.11 ~ 8.08 (m, 2H), 7.95 ~ 7.91 (m, 2H), 7.68 ~ 7.29 (m, 20 H)
MS/FAB : 627(M+)
MS / FAB: 627 (M + )
[합성예 23] 화합물 [23]의 합성[Synthesis Example 23] Synthesis of compound [23]
합성예 19와 동일한 방법으로 화합물[23-1] 5.15g(11.7mmol), 톨루엔 30ml, 물 3ml, 테트라키스(트리페닐포스피노)팔라듐(0) 0.47g(1.17mmol), 탄산칼륨 3.2g(23.5mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.0g (11.7mmol)을 사용하여 흰색 고체의 목적 화합물[23] 3.2g(47.1%)을 수득하였다.5.15 g (11.7 mmol) of compound [23-1], 30 ml of toluene, 3 ml of water, tetrakis (triphenylphosphino) palladium (0) 0.47 g (1.17 mmol), and potassium carbonate 3.2 g ( 23.5 mmol) and 3.0 g (11.7 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole were obtained to obtain 3.2 g (47.1%) of the title compound [23] as a white solid. It was.
1H NMR (300 MHz, CDCl3) : 8.06(d, 1H), 7.61(dd, 1H), 7.22~7.55(m, 20H), 7.08(t, 1H), 7.00(t, 1H), 1.67(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): 8.06 (d, 1H), 7.61 (dd, 1H), 7.22 ~ 7.55 (m, 20H), 7.08 (t, 1H), 7.00 (t, 1H), 1.67 ( s, 6 H)
MS/FAB : 579(M+)
MS / FAB: 579 (M + )
[합성예 24] 화합물 [24]의 합성[Synthesis Example 24] Synthesis of compound [24]
합성예 19와 동일한 방법으로 중간체 화합물[24-1] 5.03g(11.7mmol), 톨루엔 30ml, 물 3ml, 테트라키스(트리페닐포스피노)팔라듐(0) 0.47g(1.17mmol), 탄산칼륨 3.2g(23.5mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.0g (11.7mmol)을 사용하여 흰색 고체의 목적 화합물[24] 3.8g(56.9%)을 수득하였다.5.03 g (11.7 mmol) of intermediate compound [24-1], 30 ml of toluene, 3 ml of water, tetrakis (triphenylphosphino) palladium (0) 0.47 g (1.17 mmol) and potassium carbonate 3.2 g in the same manner as in Synthesis example 19 (23.5 mmol) and 3.0 g (11.7 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole were used to prepare 3.8 g (56.9%) of the target compound [24] as a white solid. Obtained.
1H NMR (300 MHz, CDCl3) : 7.86(d, 1H), 7.78(m, 2H), 7.55(d, 1H), 7.48~7.50(m, 4H), 7.20~7.40(m, 14H), 7.00~7.08(m, 2H) 1 H NMR (300 MHz, CDCl 3 ): 7.86 (d, 1H), 7.78 (m, 2H), 7.55 (d, 1H), 7.48 ~ 7.50 (m, 4H), 7.20 ~ 7.40 (m, 14H), 7.00 ~ 7.08 (m, 2H)
MS/FAB : 569(M+)
MS / FAB: 569 (M + )
[합성예 25] 화합물 [25]의 합성[Synthesis Example 25] Synthesis of compound [25]
합성예 19와 동일한 방법으로 중간체 화합물[25-1] 5.13g(11.7mmol), 톨루엔 30ml, 물 3ml, 테트라키스(트리페닐포스피노)팔라듐(0) 0.47g(1.17mmol), 탄산칼륨 3.2g(23.5mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.0g (11.7mmol)을 사용하여 흰색 고체의 목적 화합물[25] 2.7g(39.8%)을 수득하였다.5.13 g (11.7 mmol) of an intermediate compound [25-1], 30 ml of toluene, 3 ml of water, tetrakis (triphenylphosphino) palladium (0) 0.47 g (1.17 mmol) and potassium carbonate 3.2 g in the same manner as in Synthesis example 19 (23.5 mmol) and 3.0 g (11.7 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole were used to prepare 2.7 g (39.8%) of the target compound [25] as a white solid. Obtained.
1H NMR (300 MHz, CDCl3) : 7.54(d, 1H), 7.55(d, 1H), 7.48~7.50(m, 4H), 7.20~7.40(m, 17H), 7.00~7.08(m, 4H) 1 H NMR (300 MHz, CDCl 3 ): 7.54 (d, 1H), 7.55 (d, 1H), 7.48 ~ 7.50 (m, 4H), 7.20 ~ 7.40 (m, 17H), 7.00 ~ 7.08 (m, 4H )
MS/FAB : 578(M+)
MS / FAB: 578 (M + )
[합성예 26] 화합물 [26]의 합성[Synthesis Example 26] Synthesis of compound [26]
합성예 1과 동일한 방법으로 carbazole 2.22g(13.3mmol 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(3'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [26-1] 5.0g(13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[26] 2.2g(35.8%)을 수득하였다.Carbazole 2.22 g (13.3 mmol toluene 30 ml, copper iodide (I) copper 0.76 g (0.266 mmol), potassium phosphate 5.65 g (26.6 mmol), 1,2-ethylenediamine 0.16 g (2.66 mmol) and the same method as in Synthesis Example 1 4- (3'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [26-1] using 5.0 g (13.3 mmol) of the desired compound as a white solid [26] 2.2 g (35.8%) was obtained.
1H NMR (300 MHz, CDCl3) : 7.57(d, 1H), 7.55(d, 1H), 7.48(dd, 4H), 7.42(d, 1H), 7.41(d, 1H), 7.30~7.32(m, 8H), 7.22~7.23(m, 2H), 7.00~7.08(m, 4H) 1 H NMR (300 MHz, CDCl 3 ): 7.57 (d, 1H), 7.55 (d, 1H), 7.48 (dd, 4H), 7.42 (d, 1H), 7.41 (d, 1H), 7.30 ~ 7.32 ( m, 8H), 7.22-7.73 (m, 2H), 7.00-7.08 (m, 4H)
MS/FAB : 463(M+)
MS / FAB: 463 (M + )
[합성예 27] 화합물 [27]의 합성[Synthesis Example 27] Synthesis of compound [27]
합성예 1과 동일한 방법으로 carbazole 2.22g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(4'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [27-1] 5.0g(13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[27] 2.9g(47.1%)을 수득하였다.2.22 g (13.3 mmol) of carbazole, 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 0.16 g (2.66 mmol) of 1,2-ethylenediamine ) And the desired compound as a white solid using 5.0 g (13.3 mmol) of 4- (4'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [27-1] [ 27] 2.9 g (47.1%) were obtained.
1H NMR (300 MHz, CDCl3) : 7.55(d, 2H), 7.48(d, 4H), 7.40(d, 2H), 7.32(td, 4H), 7.29(d, 2H), 7.27(d, 2H), 7.22(td, 2H), 7.08(td, 2H), 7.00(td, 2H) 1 H NMR (300 MHz, CDCl 3 ): 7.55 (d, 2H), 7.48 (d, 4H), 7.40 (d, 2H), 7.32 (td, 4H), 7.29 (d, 2H), 7.27 (d, 2H), 7.22 (td, 2H), 7.08 (td, 2H), 7.00 (td, 2H)
MS/FAB : 463(M+)
MS / FAB: 463 (M + )
[합성예 28] 화합물 [28]의 합성[Synthesis Example 28] Synthesis of compound [28]
합성예 2와 동일한 방법으로 중간체 화합물 [3-1] 4.42g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(3'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [26-1] 5.0g (13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[28] 3.1g(37.1%)을 수득하였다.4.42 g (13.3 mmol) of intermediate compound [3-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 2 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (3'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [26-1] 3.1 g (37.1%) of the title compound [28] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 7.48~7.55(m, 7H), 7.22~7.32(m, 17H), 7.05~7.10(m, 4H), 7.00(d, 1H) 1 H NMR (300 MHz, CDCl 3 ): 7.48 ~ 7.55 (m, 7H), 7.22 ~ 7.32 (m, 17H), 7.05 ~ 7.10 (m, 4H), 7.00 (d, 1H)
MS/FAB : 628(M+)
MS / FAB: 628 (M + )
[합성예 29] 화합물 [29]의 합성[Synthesis Example 29] Synthesis of compound [29]
합성예 1과 동일한 방법으로 중간체 화합물 [4-1] 4.42g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(4'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [27-1] 5.0g (13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[29] 3.0g(35.9%)을 수득하였다.4.42 g (13.3 mmol) of intermediate compound [4-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 1 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (4'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [27-1] 3.0 g (35.9%) of the title compound [29] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 7.48~7.55(m, 8H), 7.22~7.32(m, 17H), 7.05~7.10(m, 4H), 1 H NMR (300 MHz, CDCl 3 ): 7.48-7.55 (m, 8H), 7.22-7.72 (m, 17H), 7.05-7.10 (m, 4H),
MS/FAB : 628(M+)
MS / FAB: 628 (M + )
[합성예 30] 화합물 [30]의 합성[Synthesis Example 30] Synthesis of compound [30]
합성예 2와 동일한 방법으로 중간체 화합물 [11-1] 3.98g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(3'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [26-1] 5.0g (13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[30] 3.2g(40.5%)을 수득하였다.3.98 g (13.3 mmol) of intermediate compound [11-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 2 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (3'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [26-1] 3.2 g (40.5%) of the title compound [30] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 7.89(s, 1H), 7.72(s, 1H), 7.60(d, 1H), 7.58(d, 1H), 7.55(d, 1H), 7.22~7.48(m, 17H), 7.00~7.08(m, 2H), 0.66(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): 7.89 (s, 1H), 7.72 (s, 1H), 7.60 (d, 1H), 7.58 (d, 1H), 7.55 (d, 1H), 7.22 ~ 7.48 ( m, 17H), 7.00-7.08 (m, 2H), 0.66 (s, 6H)
MS/FAB : 595(M+)
MS / FAB: 595 (M + )
[합성예 31] 화합물 [31]의 합성[Synthesis Example 31] Synthesis of Compound [31]
합성예 2와 동일한 방법으로 중간체 화합물 [13-1] 5.31g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(4'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [27-1] 5.0g(13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[31] 3.8g(41.1%)을 수득하였다.5.31 g (13.3 mmol) of intermediate compound [13-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 2 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (4'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [27-1] 3.8 g (41.1%) of the title compound [31] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 8.06(d, 2H), 7.61(d, 2H), 7.54(s, 2H), 7.48(s, 2H), 7.44~7.46(m, 6H), 7.32(td, 4H), 7.32(d, 2H), 7.30(d, 2H), 7.26(td, 2H), 7.22(td, 2H), 1.67(s, 12H) 1 H NMR (300 MHz, CDCl 3 ): 8.06 (d, 2H), 7.61 (d, 2H), 7.54 (s, 2H), 7.48 (s, 2H), 7.44-7.46 (m, 6H), 7.32 ( td, 4H), 7.32 (d, 2H), 7.30 (d, 2H), 7.26 (td, 2H), 7.22 (td, 2H), 1.67 (s, 12H)
MS/FAB : 695(M+)
MS / FAB: 695 (M + )
[합성예 32] 화합물 [32]의 합성[Synthesis Example 32] Synthesis of compound [32]
합성예 1과 동일한 방법으로 중간체 화합물 [6-1] 3.77g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(3'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [26-1] 5.0g(13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[32] 3.5g(45.5%)을 수득하였다.3.77 g (13.3 mmol) of intermediate compound [6-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 1 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (3'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [26-1] 3.5 g (45.5%) of the title compound [32] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 8.06(d, 1H), 7.61(d, 1H), 7.24~7.48(m, 20H), 7.08(td, 1H), 7.00(td, 1H), 1.67(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): 8.06 (d, 1H), 7.61 (d, 1H), 7.24-7.48 (m, 20H), 7.08 (td, 1H), 7.00 (td, 1H), 1.67 ( s, 6 H)
MS/FAB : 579(M+)
MS / FAB: 579 (M + )
[합성예 33] 화합물 [33]의 합성[Synthesis Example 33] Synthesis of compound [33]
합성예 1과 동일한 방법으로 중간체 화합물 [6-1] 3.77g(13.3mmol), 톨루엔 30ml, 요오드화(I)구리 0.76g(0.266mmol), 인산칼륨 5.65g(26.6mmol), 1,2-에틸렌디아민 0.16g(2.66mmol) 및 4-(4'-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 [27-1] 5.0g(13.3mmol) 을 사용하여 흰색 고체의 목적 화합물[33] 4.1g(53.3%)을 수득하였다.3.77 g (13.3 mmol) of intermediate compound [6-1], 30 ml of toluene, 0.76 g (0.266 mmol) of copper (I) iodide, 5.65 g (26.6 mmol) of potassium phosphate, 1,2-ethylene in the same manner as in Synthesis example 1 0.16 g (2.66 mmol) of diamine and 5.0 g (13.3 mmol) of 4- (4'-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole [27-1] 4.1 g (53.3%) of the title compound [33] was obtained as a white solid.
1H NMR (300 MHz, CDCl3) : 8.08(d, 1H), 7.33~7.40(m, 21H), 7.10~7.12(m, 2H), 1.68(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): 8.08 (d, 1H), 7.33 ~ 7.40 (m, 21H), 7.10 ~ 7.12 (m, 2H), 1.68 (s, 6H)
MS/FAB : 579(M+)
MS / FAB: 579 (M + )
[[ 합성예Synthetic example 34] 화합물 [34]의 합성 34] Synthesis of Compound [34]
합성예 1과 동일한 방법으로 중간체 화합물 [9-1] 3.63g(13.28mmol) 및 4-(4-브로 모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화 합물[34] 4.1g( 55%)를 수득하였다.3.63 g (13.28 mmol) of intermediate compound [9-1] and 5 g of 4- (4-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole in the same manner as in Synthesis example 1 13.28 mmol) was used to obtain 4.1 g (55%) of the target compound of an off-white solid [34].
1H NMR (300 MHz, CDCl3) : δ 8.50~8.45(m, 2H), 8.30~8.28(m, 4H), 7.98~7.94(m, 2H), 7.86(s, 1H), 7.78(s, 1H), 7.64~7.62(m, 4H), 7.52~7.25(m, 10H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50-8.45 (m, 2H), 8.30-8.28 (m, 4H), 7.98-7.94 (m, 2H), 7.86 (s, 1H), 7.78 (s, 1H), 7.64 ~ 7.62 (m, 4H), 7.52 ~ 7.25 (m, 10H)
MS/FAB : 568(M+) MS / FAB: 568 (M + )
[합성예 35] 화합물 [35]의 합성[Synthesis Example 35] Synthesis of compound [35]
합성예 1과 동일한 방법으로 중간체 화합물 [7-1] 3.63g(13.28mmol) 및 4-(3-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화합물[35] 4.0g( 53%)를 수득하였다.3.63 g (13.28 mmol) of the intermediate compound [7-1] and 5 g of 4- (3-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole in the same manner as in Synthesis example 1 13.28 mmol) was obtained 4.0 g (53%) of the title compound [35] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.50~8.45(m, 2H), 8.30~8.28(m, 4H), 8.05~7.94(m, 3H), 7.52~7.25(m, 15H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50 ~ 8.45 (m, 2H), 8.30 ~ 8.28 (m, 4H), 8.05 ~ 7.94 (m, 3H), 7.52 ~ 7.25 (m, 15H)
MS/FAB : 568(M+)
MS / FAB: 568 (M + )
[합성예 36] 화합물 [36]의 합성[Synthesis Example 36] Synthesis of compound [36]
합성예 1과 동일한 방법으로 중간체 화합물 5-페닐-5,10-디히드로인도로[3,2-b]인돌 3.75g(13.28mmol) 및 4-(3-브로모페닐) -3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화합물 [36] 3.9g(51%)를 수득하였다.Intermediate compound 5-phenyl-5,10-dihydroindo [3,2-b] indole 3.75 g (13.28 mmol) and 4- (3-bromophenyl) -3,5- in the same manner as in Synthesis example 1 5 g (13.28 mmol) of diphenyl-4H-1,2,4-triazole were used to obtain 3.9 g (51%) of the target compound as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.52~8.50(m, 2H), 8.30~8.28(m, 4H), 7.94~7.92(m, 2H), 7.58~7.25(m, 19H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.52 ~ 8.50 (m, 2H), 8.30 ~ 8.28 (m, 4H), 7.94 ~ 7.92 (m, 2H), 7.58 ~ 7.25 (m, 19H)
MS/FAB : 577(M+)
MS / FAB: 577 (M + )
[합성예 37] 화합물 [37]의 합성[Synthesis Example 37] Synthesis of compound [37]
합성예 1과 동일한 방법으로 중간체 화합물 5-페닐-5,10-디히드로인도로[3,2-b]인돌 3.75g(13.28mmol) 및 4-(4-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화합물[37] 3.8g(50%)를 수득하였다.Intermediate compound 5-phenyl-5,10-dihydroindo [3,2-b] indole 3.75 g (13.28 mmol) and 4- (4-bromophenyl) -3,5- in the same manner as in Synthesis example 1 5 g (13.28 mmol) of diphenyl-4H-1,2,4-triazole were used to obtain 3.8 g (50%) of the target compound [37] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.52~8.50(m, 2H), 8.30~8.28(m, 4H), 7.94~7.92(m, 2H), 7.62~7.25(m, 19H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.52 ~ 8.50 (m, 2H), 8.30 ~ 8.28 (m, 4H), 7.94 ~ 7.92 (m, 2H), 7.62 ~ 7.25 (m, 19H)
MS/FAB : 577(M+)
MS / FAB: 577 (M + )
[합성예 38] 화합물 [38]의 합성[Synthesis Example 38] Synthesis of compound [38]
합성예 1과 동일한 방법으로 중간체 화합물 5,10-디페닐-10,15-디히드로-5H-디인도로[3,2-a:3,'2'-c]카바졸 6.61 g (13.28mmol) 및 4-(4-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5 g (13.28mmol)을 사용하여 미색 고체의 목적화합물[38] 4.4g(42%)를 수득하였다.6.61 g (13.28 mmol) of an intermediate compound 5,10-diphenyl-10,15-dihydro-5H-diindoro [3,2-a: 3, '2'-c] carbazole in the same manner as in Synthesis example 1 ) And 4.4 g (42) of the target compound as an off-white solid using 5 g (13.28 mmol) of 4- (4-bromophenyl) -3,5-diphenyl-4H-1,2,4-triazole. %) Was obtained.
1H NMR (300 MHz, CDCl3) : δ 8.50~8.45(m, 3H), 8.30~8.28(m, 4H), 7.94~7.92(m, 3H), 7.62~7.25(m, 26H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50 ~ 8.45 (m, 3H), 8.30 ~ 8.28 (m, 4H), 7.94 ~ 7.92 (m, 3H), 7.62 ~ 7.25 (m, 26H)
MS/FAB : 792(M+) MS / FAB: 792 (M + )
[합성예 39] 화합물 [39]의 합성[Synthesis Example 39] Synthesis of compound [39]
합성예 19와 동일한 방법으로 중간체 화합물 9-페닐-9H-카바졸-3-일보론산 4.58g (15.94mmol) 및 4-(3-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화합물[39] 4.2g(59%)를 수득하였다.4.58 g (15.94 mmol) of intermediate compound 9-phenyl-9H-carbazol-3-ylboronic acid and 4- (3-bromophenyl) -3,5-diphenyl-4H-1 in the same manner as in Synthesis example 19, 5 g (13.28 mmol) of 2,4-triazole were used to obtain 4.2 g (59%) of the target compound [39] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.30~8.28(m, 8H), 8.18~8.09(m, 3H), 8.00(d, 1H), 7.77(s, 1H), 7.63~7.41(m, 16H), 7.30~7.29(m, 1H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.30-8.28 (m, 8H), 8.18-8.09 (m, 3H), 8.00 (d, 1H), 7.77 (s, 1H), 7.63-7.41 (m, 16H), 7.30-7.29 (m, 1H)
MS/FAB : 538(M+) MS / FAB: 538 (M + )
[합성예 40] 화합물 [40]의 합성[Synthesis Example 40] Synthesis of compound [40]
100mL 둥근 바닥 플라스크에 N'-벤조일벤조히드라지드 10g(41.62mmol) 및 1,2-디클로벤젠 100ml을 넣고 질소분위기에서 교반하였다. 상기 반응액에 벤젠-1,4-디아민 36g (332.97mmol) 및 포스포릴 트리클로라이드 25.5g(166.48mmol)을 넣은 후 160℃에서 12 시간 동안 환류 교반하였다. 반응종결 후 실온까지 천천히 냉각한 다음 반응액을 여과하였다. 여과된 고체는 증류수와 메탄올을 사용하여 세척하였다. 세척한 고체를 아세톤 100ml을 사용하여 4시간 환류교반 후 40℃에서 여과한 다음 아세톤/n-헥산을 사용하여 세척 100℃에서 진공건조하여 미색 고체의 목적화합물[40] 4.2g(59%)를 수득하였다 10 g (41.62 mmol) of N'-benzoylbenzohydrazide and 100 ml of 1,2-dichlorobenzene were added to a 100 mL round bottom flask, and the mixture was stirred in a nitrogen atmosphere. 36 g (332.97 mmol) of benzene-1,4-diamine and 25.5 g (166.48 mmol) of phosphoryl trichloride were added to the reaction solution, and the mixture was stirred under reflux at 160 ° C. for 12 hours. After completion of the reaction, the mixture was slowly cooled to room temperature, and the reaction solution was filtered. The filtered solid was washed with distilled water and methanol. The washed solid was stirred under reflux for 4 hours using 100 ml of acetone, filtered at 40 ° C., and then washed with acetone / n-hexane. The resultant was dried under vacuum at 100 ° C. to obtain 4.2 g (59%) of the target compound as an off-white solid. Obtained
1H NMR (300 MHz, CDCl3) : δ 8.50~8.45(m, 2H), 8.30~8.28(m, 8H), 7.62~7.60(m, 4H), 7.51~7.41(m, 12H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.50-8.45 (m, 2H), 8.30-8.28 (m, 8H), 7.62-7.60 (m, 4H), 7.51-7.41 (m, 12H)
MS/FAB : 516(M+)
MS / FAB: 516 (M + )
[합성예 41] 화합물 [41]의 합성[Synthesis Example 41] Synthesis of compound [41]
합성예 19와 동일한 방법으로 중간체 화합물 5,5-디페닐-5H-디벤조[b,d]실롤-3-일보론산 6.03 g (15.94mmol) 및 4-(3-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5 g (13.28mmol)을 사용하여 미색 고체의 목적화합물[41] 5.1g(62%)를 수득하였다.6.03 g (15.94 mmol) and 4- (3-bromophenyl) -3, intermediate compound 5,5-diphenyl-5H-dibenzo [b, d] silol-3-ylboronic acid in the same manner as in Synthesis example 19, 5 g (13.28 mmol) of 5-diphenyl-4H-1,2,4-triazole were used to obtain 5.1 g (62%) of the target compound [41] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.30~8.28(m, 4H), 8.09(s, 1H), 7.95~7.89(m, 2H), 7.82(s, 1H), 7.61~7.35(m, 23H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.30-8.28 (m, 4H), 8.09 (s, 1H), 7.95-7.89 (m, 2H), 7.82 (s, 1H), 7.61-7.35 (m, 23H)
MS/FAB : 629(M+)
MS / FAB: 629 (M + )
[합성예 42] 화합물 [42]의 합성[Synthesis Example 42] Synthesis of compound [42]
합성예 19와 동일한 방법으로 중간체 화합물 디벤조[b,d]티오펜-4-일보론산 3.64g (15.94mmol) 및 4-(3-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체의 목적화합물[42] 3.8g(60%)를 수득하였다.3.64 g (15.94 mmol) of the intermediate compound dibenzo [b, d] thiophen-4-ylboronic acid and 4- (3-bromophenyl) -3,5-diphenyl-4H-1 in the same manner as in Synthesis example 19 5 g (13.28 mmol) of 2,4-triazole were used to obtain 3.8 g (60%) of the target compound [42] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.45~8.41(m, 2H), 8.30~8.22(m, 5H), 8.09(s, 1H), 7.98~7.97(m, 1H), 7.58~7.41(m, 12H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.45-8.41 (m, 2H), 8.30-8.22 (m, 5H), 8.09 (s, 1H), 7.98-7.97 (m, 1H), 7.58-7.41 ( m, 12H)
MS/FAB : 479(M+)
MS / FAB: 479 (M + )
[합성예 43] 화합물 [43]의 합성[Synthesis Example 43] Synthesis of compound [43]
합성예 19와 동일한 방법으로 중간체 화합물 트리페닐렌-2-일보론산 4.34g(15.94mmol) 및 4-(3-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체 의 목적화합물[43] 4.2g(61%)를 수득하였다.4.34 g (15.94 mmol) of the intermediate compound triphenylene-2-ylboronic acid and 4- (3-bromophenyl) -3,5-diphenyl-4H-1,2,4-tria in the same manner as in Synthesis example 19 5 g (13.28 mmol) of sol were used to obtain 4.2 g (61%) of the target compound [43] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.60(s, 1H), 8.53~8.52(m, 2H), 8.30~8.28(m, 4H), 8.18~8.04(m, 5H), 7.88~7.82(m, 4H), 7.52~7.41(m, 9H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.60 (s, 1H), 8.53 to 8.52 (m, 2H), 8.30 to 8.28 (m, 4H), 8.18 to 8.04 (m, 5H), 7.88 to 7.82 ( m, 4H), 7.52-7.41 (m, 9H)
MS/FAB : 523(M+)
MS / FAB: 523 (M + )
[합성예 44] 화합물 [44]의 합성[Synthesis Example 44] Synthesis of compound [44]
합성예 19와 동일한 방법으로 중간체 화합물 트리페닐렌-2-일보론산 4.34g(15.94mmol) 및 4-(4-브로모페닐)-3,5-디페닐-4H-1,2,4-트리아졸 5g(13.28mmol)을 사용하여 미색 고체 의 목적화합물[44] 4.3g(62%)를 수득하였다.4.34 g (15.94 mmol) of the intermediate compound triphenylene-2-ylboronic acid and 4- (4-bromophenyl) -3,5-diphenyl-4H-1,2,4-tria in the same manner as in Synthesis example 19 5 g (13.28 mmol) of sol were used to obtain 4.3 g (62%) of the target compound [44] as an off-white solid.
1H NMR (300 MHz, CDCl3) : δ 8.60(s, 1H), 8.53~8.52(m, 2H), 8.30~8.28(m, 4H), 8.18~8.04(m, 4H), 7.88~7.79(m, 6H), 7.68~7.67(m, 2H), 7.51~7.41(m, 6H) 1 H NMR (300 MHz, CDCl 3 ): δ 8.60 (s, 1H), 8.53 ~ 8.52 (m, 2H), 8.30 ~ 8.28 (m, 4H), 8.18 ~ 8.04 (m, 4H), 7.88 ~ 7.79 ( m, 6H), 7.68-7.57 (m, 2H), 7.51-7.41 (m, 6H)
MS/FAB : 523(M+)
MS / FAB: 523 (M + )
[[ 합성예Synthetic example 45] 화합물 [45]의 합성 45] Synthesis of Compound [45]
합성예 19와 동일한 방법으로 디벤조[b,d]티오펜-4-일보론산 5g(17.36mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 4.4g(17.36mmol)을 사용하여 미색 고체의 목적 화합물[45] 3.9g (56%)을 수득하였다.5 g (17.36 mmol) of dibenzo [b, d] thiophen-4-ylboronic acid and 4.4 g of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole in the same manner as in Synthesis example 19 (17.36 mmol) was used to yield 3.9 g (56%) of the title compound [45] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.35~8.31(m, 2H), 8.18(d, 2H), 7.88(d, 1H), 7.70(d, 1H), 7.48~7.31(m, 11H) 1 H NMR (300 MHz, CDCl 3 ): 8.35-8.31 (m, 2H), 8.18 (d, 2H), 7.88 (d, 1H), 7.70 (d, 1H), 7.48-7.31 (m, 11H)
MS/FAB : 404(M+)
MS / FAB: 404 (M + )
[합성예 46] 화합물 [46]의 합성[Synthesis Example 46] Synthesis of compound [46]
합성예 19와 동일한 방법으로 디벤조[b,d]티오펜-2-일보론산 5g(17.36mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 4.4g(17.36mmol)을 사용하여 미색 고체의 목적 화합물[46] 3.8g (54%)을 수득하였다.5 g (17.36 mmol) of dibenzo [b, d] thiophen-2-ylboronic acid and 4.4 g of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole in the same manner as in Synthesis example 19 (17.36 mmol) was used to yield 3.8 g (54%) of the title compound [46] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.35(d, 1H), 8.18(d, 2H), 7.90~7.88(m, 2H), 7.76~7.70(m, 2H), 7.48~7.31(m, 10H) 1 H NMR (300 MHz, CDCl 3 ): 8.35 (d, 1H), 8.18 (d, 2H), 7.90 ~ 7.88 (m, 2H), 7.76 ~ 7.70 (m, 2H), 7.48 ~ 7.31 (m, 10H )
MS/FAB : 404(M+)
MS / FAB: 404 (M + )
[합성예 47] 화합물 [47]의 합성[Synthesis Example 47] Synthesis of compound [47]
합성예 19와 동일한 방법으로 3-(디벤조[b,d]티오펜-4-일)페닐보론산 5g(16.44mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 4.2g(16.44mmol)을 사용하여 미색 고체의 목적 화합물[47] 4.8g (61%)을 수득하였다.5 g (16.44 mmol) of 3- (dibenzo [b, d] thiophen-4-yl) phenylboronic acid and 3-chloro-4,5-diphenyl-4H-1,2, 4.2 g (16.44 mmol) of 4-triazole was used to obtain 4.8 g (61%) of the target compound [47] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.35~8.31(m, 2H), 8.18~8.10(m, 4H), 7.88(d, 1H), 7.60(s, 1H), 7.48~7.31(m, 13H) 1 H NMR (300 MHz, CDCl 3 ): 8.35 to 8.31 (m, 2H), 8.18 to 8.10 (m, 4H), 7.88 (d, 1H), 7.60 (s, 1H), 7.48 to 7.31 (m, 13H )
MS/FAB : 480(M+)
MS / FAB: 480 (M + )
[합성예 48] 화합물 [48]의 합성[Synthesis Example 48] Synthesis of compound [48]
합성예 19와 동일한 방법으로 트리페닐렌-2-일보론산 5g(18.37mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 4.7g(18.37mmol)을 사용하여 미색 고체의 목적 화합물[48] 4.3g (52%)을 수득하였다.In the same manner as in Synthesis Example 19, 5 g (18.37 mmol) of triphenylene-2-ylboronic acid and 4.7 g (18.37 mmol) of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole were used. This gave 4.3 g (52%) of the title compound [48] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 9.05(s, 1H), 8.83(d, 2H), 8.18(d, 2H), 8.08~7.94(m, 4H), 7.78~7.72(m, 4H), 7.48~7.31(m, 8H) 1 H NMR (300 MHz, CDCl 3 ): 9.05 (s, 1H), 8.83 (d, 2H), 8.18 (d, 2H), 8.08 ~ 7.94 (m, 4H), 7.78 ~ 7.72 (m, 4H), 7.48 ~ 7.31 (m, 8H)
MS/FAB : 448(M+)
MS / FAB: 448 (M + )
[합성예 49] 화합물 [49]의 합성[Synthesis Example 49] Synthesis of compound [49]
합성예 19와 동일한 방법으로 3-(트리페닐렌-2-일)페닐보론산 5g(14.36mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.7g(14.36mmol)을 사용하여 미색 고체의 목적 화합물[49] 3.8g (51%)을 수득하였다.5 g (14.36 mmol) of 3- (triphenylen-2-yl) phenylboronic acid and 3.7 g of 3-chloro-4,5-diphenyl-4H-1,2,4-triazole in the same manner as in Synthesis example 19 (14.36 mmol) was used to yield 3.8 g (51%) of the target compound [49] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 9.05(s, 1H), 8.83(d, 2H), 8.18~7.94(m, 7H), 7.78~7.72(m, 4H), 7.60(s, 1H), 7.48~7.31(m, 10H) 1 H NMR (300 MHz, CDCl 3 ): 9.05 (s, 1H), 8.83 (d, 2H), 8.18 ~ 7.94 (m, 7H), 7.78 ~ 7.72 (m, 4H), 7.60 (s, 1H), 7.48 ~ 7.31 (m, 10H)
MS/FAB : 524(M+)
MS / FAB: 524 (M + )
[합성예 50] 화합물 [50]의 합성[Synthesis Example 50] Synthesis of compound [50]
합성예 19와 동일한 방법으로 9,9'-스파이로비[플로렌]-2-일보론산 5g(13.88mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.5g(13.88mmol)을 사용하여 미색 고체의 목적 화합물[50] 4.2g (57%)을 수득하였다.5g (13.88mmol) and 3-chloro-4,5-diphenyl-4H-1,2,4-triazole 9,9'-spirobibi [florene] -2-ylboronic acid in the same manner as in Synthesis example 19 3.5 g (13.88 mmol) was used to obtain 4.2 g (57%) of the target compound [50] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 2H), 7.83~7.77(m, 2H), 7.67~7.65(m, 3H), 7.53~7.06(m, 18H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 2H), 7.83 ~ 7.77 (m, 2H), 7.67 ~ 7.65 (m, 3H), 7.53 ~ 7.06 (m, 18H)
MS/FAB : 536(M+)
MS / FAB: 536 (M + )
[합성예 51] 화합물 [51]의 합성[Synthesis Example 51] Synthesis of compound [51]
합성예 19와 동일한 방법으로 5,5-디메틸-5H-디벤조[b,d]실롤-3-일보론산 5g(19.67mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 5g(19.67mmol)을 사용하여 미색 고체의 목적 화합물[51] 4.6g (54%)을 수득하였다.5 g (19.67 mmol) of 5,5-dimethyl-5H-dibenzo [b, d] silol-3-ylboronic acid and 3-chloro-4,5-diphenyl-4H-1,2 in the same manner as in Synthesis example 19 5 g (19.67 mmol) of, 4-triazole were used to obtain 4.6 g (54%) of the target compound [51] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 2H), 7.85~7.79(m, 3H), 7.72(s, 1H), 7.51~7.23(m, 11H), 0.76(s, 6H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 2H), 7.85 ~ 7.79 (m, 3H), 7.72 (s, 1H), 7.51 ~ 7.23 (m, 11H), 0.76 (s, 6H)
MS/FAB : 430(M+)
MS / FAB: 430 (M + )
[합성예 52] 화합물 [52]의 합성[Synthesis Example 52] Synthesis of compound [52]
합성예 19와 동일한 방법으로 5,5-디페닐-5H-디벤조[b,d]실롤-3-일보론산 5g(13.22mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.4g(13.22mmol)을 사용하여 미색 고체의 목적 화합물[52] 4.1g (56%)을 수득하였다.In the same manner as in Synthesis example 19, 5 g (13.22 mmol) of 5,5-diphenyl-5H-dibenzo [b, d] silol-3-ylboronic acid and 3-chloro-4,5-diphenyl-4H-1, 3.4 g (13.22 mmol) of 2,4-triazole were used to give 4.1 g (56%) of the target compound [52] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 2H), 7.85~7.79(m, 3H), 7.72(s, 1H), 7.51~7.23(m, 21H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 2H), 7.85 ~ 7.79 (m, 3H), 7.72 (s, 1H), 7.51 ~ 7.23 (m, 21H)
MS/FAB : 554(M+)
MS / FAB: 554 (M + )
[합성예 53] 화합물 [53]의 합성[Synthesis Example 53] Synthesis of compound [53]
합성예 19와 동일한 방법으로 4-(4,5-디페닐-4H-1,2,4-트리아졸-3-일)페닐보론산 5g(14.66mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 3.7g(14.66mmol)을 사용하여 미색 고체의 목적 화합물[53] 3.9g (51%)을 수득하였다.5 g (14.66 mmol) of 4- (4,5-diphenyl-4H-1,2,4-triazol-3-yl) phenylboronic acid and 3-chloro-4,5-di in the same manner as in Synthesis example 19 3.7 g (14.66 mmol) of phenyl-4H-1,2,4-triazole were used to obtain 3.9 g (51%) of the target compound [53] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 4H), 7.75(s, 4H), 7.48~7.31(m, 16H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 4H), 7.75 (s, 4H), 7.48 ~ 7.31 (m, 16H)
MS/FAB : 520(M+)
MS / FAB: 520 (M + )
[합성예 54] 화합물 [54]의 합성[Synthesis Example 54] Synthesis of compound [54]
합성예 19와 동일한 방법으로 3-(4-브로모페닐)-4,5-디페닐-4H-1,2,4-트리아졸 5g(13.29mmol), 중간체 [53-1] 3.4g(13.29mmol)을 사용하여 미색 고체의 목적 화합물[54] 3.9g (50%)을 수득하였다.In the same manner as in Synthesis example 19, 5 g (13.29 mmol) of 3- (4-bromophenyl) -4,5-diphenyl-4H-1,2,4-triazole, 3.4 g (13.29) of an intermediate [53-1] mmol) gave 3.9 g (50%) of the title compound [54] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 4H), 7.75(d, 4H), 7.48~7.31(m, 16H), 7.15(d, 4H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 4H), 7.75 (d, 4H), 7.48-7.31 (m, 16H), 7.15 (d, 4H)
MS/FAB : 593(M+)
MS / FAB: 593 (M + )
[합성예 55] 화합물 [55]의 합성[Synthesis Example 55] Synthesis of compound [55]
합성예 19와 동일한 방법으로 9,9'-스파이로비[플로렌]-2,7'-디일 디보론산5g(12.38mmol) 및 3-클로로-4,5-디페닐-4H-1,2,4-트리아졸 6.3g(24.75mmol)을 사용하여 미색 고체의 목적 화합물[55] 5.4g (58%)을 수득하였다.In the same manner as in Synthesis example 19, 5 g (12.38 mmol) of 9,9'-spirobibi [florene] -2,7'-diyl diboronic acid and 3-chloro-4,5-diphenyl-4H-1,2, 6.3 g (24.75 mmol) of 4-triazole were used to obtain 5.4 g (58%) of the target compound [55] as an off-white solid.
1H NMR (300 MHz, CDCl3) : 8.18(d, 4H), 7.77~7.71(m, 4H), 7.57(s, 2H), 7.48~7.31(m, 20H), 7.18~7.12(m, 4H) 1 H NMR (300 MHz, CDCl 3 ): 8.18 (d, 4H), 7.77 ~ 7.71 (m, 4H), 7.57 (s, 2H), 7.48 ~ 7.31 (m, 20H), 7.18 ~ 7.12 (m, 4H )
MS/FAB : 755(M+)
MS / FAB: 755 (M + )
비교예 1Comparative Example 1
하기 화학식 a로 표시되는 화합물 a를 인광 호스트로 사용하고, 하기 화학식 b로 표시되는 화합물을 인광 도판트로 사용하고, 2-TNATA(4,4',4"-tris(N-naphthalen-2-yl)-N-phenylamino)-triphenylamine)을 정공주입층 물질로 사용하고, α-NPD(N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine)을 정공수송층 물질로 사용하여, 다음과 같은 구조를 갖는 유기발광소자를 제작하였다: ITO/2-TNATA(80nm)/α-NPD(30nm)/화합물a+화합물b(30nm)/Alq3(30nm)/LiF(0.5nm)/ Al(60nm).Using compound a represented by the following formula a as a phosphorescent host, using a compound represented by the following formula b as a phosphorescent dopant, 2-TNATA (4,4 ', 4 "-tris (N-naphthalen-2-yl ) -N-phenylamino) -triphenylamine) is used as the hole injection layer material, and α-NPD (N, N'-di (naphthalene-1-yl) -N, N'-diphenylbenzidine) is used as the hole transport layer material. An organic light emitting device was manufactured having the following structure: ITO / 2-TNATA (80nm) / α-NPD (30nm) / Compound a + Compound b (30nm) / Alq3 (30nm) / LiF (0.5nm) / Al (60 nm).
애노드는 코닝(Corning)사의 15Ω/cm2 (1000Å) ITO 유리 기판을 50mm x 50mm x 0.7mm크기로 잘라서 아세톤 이소프로필 알콜과 순수물 속에서 각 15분 동안 초음파 세정한 후, 30분 동안 UV 오존 세정하여 사용하였다. 상기 기판 상부에 2-TANATA를 진공 증착하여 80nm 두께의 정공주입층을 형성하였다. 상기 정공주입층 상부에, α-NPD를 진공 증착하여 30nm 두께의 정공수송층을 형성하였다. 상기 정공수송층 상부에 화학식 a로 표시되는 화합물 a 및 화학식 b로 표시되는 화합물 b(8% 도핑)를 진공 증착하여 30nm두께의 발광층을 형성하였다. 이후, 상기 발광층 상부에 Alq3 화합물을 30nm의 두께로 진공증착하여 전자수송층을 형성하였다. 상기 전자수송층 상부에 LiF 0.5nm(전자주입층)과 Al 60nm(캐소드)를 순차적으로 진공증착하여, 도 1b에 도시된 바와 같은 유기발광소자를 제조하였다. 이를 비교샘플 1이라고 한다.Anode cuts Corning's 15Ω / cm 2 (1000Å) ITO glass substrate into 50mm x 50mm x 0.7mm sizes, ultrasonically cleans for 15 minutes in acetone isopropyl alcohol and pure water, and then UV ozone for 30 minutes. It was used by washing. 2-TANATA was vacuum-deposited on the substrate to form a hole injection layer having a thickness of 80 nm. On top of the hole injection layer,? -NPD was vacuum deposited to form a hole transport layer having a thickness of 30 nm. Compound a represented by Formula a and Compound b represented by Formula b (8% doping) were vacuum deposited on the hole transport layer to form a light emitting layer having a thickness of 30 nm. Then, an Alq3 compound was vacuum deposited on the light emitting layer to a thickness of 30 nm to form an electron transporting layer. LiF 0.5 nm (electron injection layer) and Al 60 nm (cathode) were sequentially vacuum-deposited on the electron transporting layer to form an organic light emitting device as shown in FIG. 1B. This is referred to as Comparative Sample 1.
비교예 2Comparative Example 2
하기 화학식 a로 표시되는 화합물 a를 인광 호스트로 사용하고, 하기 화학식 c로 표시되는 화합물 c을 인광 도판트로 사용하고, 2-TNATA(4,4',4"-tris(N-naphthalen-2-yl)-N-phenylamino)-triphenylamine)을 정공주입층 물질로 사용하고, α-NPD(N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine)을 정공수송층 물질로 사용하여, 다음과 같은 구조를 갖는 유기발광소자를 제작하였다: ITO/2-TNATA(80nm)/α-NPD(30nm)/화합물a+화합물c(30nm)/Alq3(30nm)/LiF(0.5nm)/ Al(60nm).Using compound a represented by the following formula a as a phosphorescent host, using compound c represented by the following formula c as a phosphorescent dopant, 2-TNATA (4,4 ', 4 "-tris (N-naphthalen-2- yl) -N-phenylamino) -triphenylamine) is used as the hole injection layer material, and α-NPD (N, N'-di (naphthalene-1-yl) -N, N'-diphenylbenzidine) is used as the hole transport layer material. Thus, an organic light emitting device having the following structure was prepared: ITO / 2-TNATA (80 nm) / α-NPD (30 nm) / Compound a + Compound c (30 nm) / Alq 3 (30 nm) / LiF (0.5 nm) / Al (60 nm).
애노드는 코닝(Corning)사의 15Ω/cm2 (1000Å) ITO 유리 기판을 50mm x 50mm x 0.7mm크기로 잘라서 아세톤 이소프로필 알콜과 순수물 속에서 각 15분 동안 초음파 세정한 후, 30분 동안 UV 오존 세정하여 사용하였다. 상기 기판 상부에 2-TANATA를 진공 증착하여 80nm 두께의 정공주입층을 형성하였다. 상기 정공주입층 상부에, α-NPD를 진공 증착하여 30nm 두께의 정공수송층을 형성하였다. 상기 정공수송층 상부에 화학식 a로 표시되는 화합물 a 및 화학식 c로 표시되는 화합물 c(10% 도핑)를 진공 증착하여 30nm두께의 발광층을 형성하였다. 이후, 상기 발광층 상부에 Alq3 화합물을 30nm의 두께로 진공증착하여 전자수송층을 형성하였다. 상기 전자수송층 상부에 LiF 0.5nm(전자주입층)과 Al 60nm(캐소드)를 순차적으로 진공증착하여, 도 1b에 도시된 바와 같은 유기발광소자를 제조하였다. 이를 비교샘플 2이라고 한다.Anode cuts Corning's 15Ω / cm 2 (1000Å) ITO glass substrate into 50mm x 50mm x 0.7mm sizes, ultrasonically cleans for 15 minutes in acetone isopropyl alcohol and pure water, and then UV ozone for 30 minutes. It was used by washing. 2-TANATA was vacuum-deposited on the substrate to form a hole injection layer having a thickness of 80 nm. On top of the hole injection layer,? -NPD was vacuum deposited to form a hole transport layer having a thickness of 30 nm. Compound (a) represented by formula (a) and compound c (10% doped) represented by formula (c) were vacuum deposited on the hole transport layer to form a 30 nm thick light emitting layer. Then, an Alq3 compound was vacuum deposited on the light emitting layer to a thickness of 30 nm to form an electron transporting layer. LiF 0.5 nm (electron injection layer) and Al 60 nm (cathode) were sequentially vacuum-deposited on the electron transporting layer to form an organic light emitting device as shown in FIG. 1B. This is referred to as Comparative Sample 2.
비교예 3Comparative Example 3
하기 화학식 a로 표시되는 화합물 a를 인광 호스트로 사용하고, 하기 화학식 d로 표시되는 화합물 d를 인광 도판트로 사용하고, 2-TNATA(4,4',4"-tris(N-naphthalen-2-yl)-N-phenylamino)-triphenylamine)을 정공주입층 물질로 사용하고, α-NPD(N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine)을 정공수송층 물질로 사용하여, 다음과 같은 구조를 갖는 유기발광소자를 제작하였다: ITO/2-TNATA(80nm)/α-NPD(30nm)/화합물a+화합물d(30nm)/Alq3(30nm)/LiF(0.5nm)/ Al(60nm).Using compound a represented by the following formula a as a phosphorescent host, compound d represented by the following formula d as a phosphorescent dopant, 2-TNATA (4,4 ', 4 "-tris (N-naphthalen-2- yl) -N-phenylamino) -triphenylamine) is used as the hole injection layer material, and α-NPD (N, N'-di (naphthalene-1-yl) -N, N'-diphenylbenzidine) is used as the hole transport layer material. Thus, an organic light emitting device having the following structure was manufactured: ITO / 2-TNATA (80 nm) / α-NPD (30 nm) / Compound a + Compound d (30 nm) / Alq 3 (30 nm) / LiF (0.5 nm) / Al (60 nm).
애노드는 코닝(Corning)사의 15Ω/cm2 (1000Å) ITO 유리 기판을 50mm x 50mm x 0.7mm크기로 잘라서 아세톤 이소프로필 알콜과 순수물 속에서 각 15분 동안 초음파 세정한 후, 30분 동안 UV 오존 세정하여 사용하였다. 상기 기판 상부에 2-TANATA를 진공 증착하여 80nm 두께의 정공주입층을 형성하였다. 상기 정공주입층 상부에, α-NPD를 진공 증착하여 30nm 두께의 정공수송층을 형성하였다. 상기 정공수송층 상부에 화학식 a로 표시되는 화합물 a 및 화학식 d로 표시되는 화합물 d(8% 도핑)를 진공 증착하여 30nm두께의 발광층을 형성하였다. 이후, 상기 발광층 상부에 Alq3 화합물을 30nm의 두께로 진공증착하여 전자수송층을 형성하였다. 상기 전자수송층 상부에 LiF 0.5nm(전자주입층)과 Al 60nm(캐소드)를 순차적으로 진공증착하여, 도 1b에 도시된 바와 같은 유기발광소자를 제조하였다. 이를 비교샘플 3이라고 한다.Anode cuts Corning's 15Ω / cm 2 (1000Å) ITO glass substrate into 50mm x 50mm x 0.7mm sizes, ultrasonically cleans for 15 minutes in acetone isopropyl alcohol and pure water, and then UV ozone for 30 minutes. It was used by washing. 2-TANATA was vacuum-deposited on the substrate to form a hole injection layer having a thickness of 80 nm. On top of the hole injection layer,? -NPD was vacuum deposited to form a hole transport layer having a thickness of 30 nm. Compound (a) represented by Formula (a) and compound d (8% doped) represented by Formula (d) were vacuum deposited on the hole transport layer to form a 30 nm thick light emitting layer. Then, an Alq3 compound was vacuum deposited on the light emitting layer to a thickness of 30 nm to form an electron transporting layer. LiF 0.5 nm (electron injection layer) and Al 60 nm (cathode) were sequentially vacuum-deposited on the electron transporting layer to form an organic light emitting device as shown in FIG. 1B. This is referred to as Comparative Sample 3.
본 비교예 및 이하의 비교예 및 실시예들에서는 디오브이사에서 제작한 EL 증착기를 사용하여 소자를 제작하였다.In this comparative example and the following comparative examples and embodiments, devices were fabricated by using an EL evaporator manufactured by DeVoiste.
<화학식 a> <화학식 b><Formula a> <Formula b>
<화학식 c> <화학식 d><Formula c> <Formula d>
실시예 1~24Examples 1-24
상기 비교예 1 중, 발광층 인광 호스트 화합물로서 화합물 a 대신 상기 합성예에 개시된 화학식 1~51로 표시되는 화합물 1~51을 발광층 인광호스트 화합물로 각각 이용한 것을 제외하고는 상기 비교예 1과 동일한 방법으로 ITO/2-TNATA(80nm)/α-NPD(30nm)/[인광 호스트 화합물 1~51 중 하나+화합물 b](30nm)/Alq3(30nm)/LiF(0.5nm)/Al(60nm)의 구조를 갖는 유기발광소자를 제조하였다. 이를 각각 샘플 1 내지 51이라고 한다.
In Comparative Example 1, except that Compound 1 to 51 represented by Formulas 1 to 51 disclosed in Synthesis Example were used as the emitting layer phosphorescent host compound instead of Compound a as the emitting layer phosphorescent host compound, in the same manner as in Comparative Example 1 Structure of ITO / 2-TNATA (80nm) / α-NPD (30nm) / [one of phosphorescent host compounds 1-51 + compound b] (30nm) / Alq3 (30nm) / LiF (0.5nm) / Al (60nm) An organic light emitting device was manufactured. These are called Samples 1 to 51, respectively.
평가예 1: 비교샘플 1 및 샘플 1~51의 발광 특성 평가Evaluation Example 1 Evaluation of Luminescence Characteristics of Comparative Sample 1 and Samples 1 to 51
비교샘플 1 및 샘플 1~51에 대하여, Keithley SMU 235, PR650를 이용하여 발광휘도, 발광효율, 발광피크를 각각 평가하여, 그 결과를 하기 표 1에 나타내었다. 상기 샘플들은 516~524nm 범위에서 녹색 발광피크값을 보여주었다.For Comparative Sample 1 and Samples 1 to 51, light emission luminance, light emission efficiency, and light emission peak were evaluated using Keithley SMU 235 and PR650, and the results are shown in Table 1 below. The samples showed green emission peaks in the range of 516-524 nm.
화합물
No.Host
compound
No.
화합물
No.Dopant
compound
No.
[cd/m2]Luminance
[cd / m 2 ]
[cd/A]efficiency
[cd / A]
[nm]Luminous Peak
[nm]
상기 표 1에 보여지는 바와 같이 샘플 1 내지 51은 비교샘플 1에 비하여 향상된 발광 특성을 나타내었다.As shown in Table 1, Samples 1 to 51 showed improved luminescence properties compared to Comparative Sample 1.
실시예Example 52~56 52-56
상기 비교예 2 중, 발광층 인광 호스트 화합물로서 화합물 a 대신 상기 합성예에 개시된 화학식 5, 16, 25, 46 및 50으로 표시되는 화합물 5, 16, 25, 46 및 50을 발광층 인광호스트 화합물로 각각 이용한 것을 제외하고는 상기 비교예 2와 동일한 방법으로 ITO/2-TNATA(80nm)/α-NPD(30nm)/[인광 호스트 화합물 5, 16, 25, 46 및 50 중 하나 + 화합물c](30nm)/Alq3(30nm)/LiF(0.5nm)/Al(60nm)의 구조를 갖는 유기발광소자를 제조하였다. 이를 각각 샘플 52 내지 56이라고 한다.
In Comparative Example 2, compounds 5, 16, 25, 46, and 50 represented by Formulas 5, 16, 25, 46, and 50 disclosed in Synthesis Example, respectively, were used as light emitting layer phosphorescent host compounds instead of compound a as light emitting layer phosphorescent host compounds. Except that ITO / 2-TNATA (80nm) / α-NPD (30nm) / [phosphorescent host compound 5, 16, 25, 46 and 50 + compound c] (30nm) in the same manner as in Comparative Example 2 An organic light emitting diode having a structure of / Alq 3 (30 nm) / LiF (0.5 nm) / Al (60 nm) was prepared. These are referred to as samples 52 to 56, respectively.
평가예Evaluation example 2: 비교샘플 2 및 샘플 52~56의 발광 특성 평가 2: Evaluation of Luminescence Characteristics of Comparative Sample 2 and Samples 52-56
비교샘플 2 및 샘플 52~56에 대하여, Keithley SMU 235, PR650를 이용하여 발광휘도, 발광효율, 발광피크를 각각 평가하여, 그 결과를 하기 표 2에 나타내었다. 상기 샘플들은 610~616nm 범위에서 적색 발광피크값을 보여주었다.For Comparative Sample 2 and Samples 52 to 56, light emission luminance, light emission efficiency, and light emission peak were evaluated using Keithley SMU 235 and PR650, respectively, and the results are shown in Table 2 below. The samples showed red emission peaks in the range of 610-616 nm.
화합물
No.Host
compound
No.
화합물
No.Dopant
compound
No.
[cd/m2]Luminance
[cd / m 2 ]
[cd/A]efficiency
[cd / A]
[nm]Luminous Peak
[nm]
상기 표 2에 보여지는 바와 같이 샘플 52 내지 56은 비교샘플 2에 비하여 향상된 발광 특성을 나타내었다.As shown in Table 2, Samples 52 to 56 showed improved luminescence properties compared to Comparative Sample 2.
실시예 57~59Examples 57-59
상기 비교예 3 중, 발광층 인광 호스트 화합물로서 화합물 a 대신 상기 합성예에 개시된 화학식 12, 24, 38로 표시되는 화합물 12, 24, 38을 발광층 인광호스트 화합물로 각각 이용한 것을 제외하고는 상기 비교예 3과 동일한 방법으로 ITO/2-TNATA(80nm)/α-NPD(30nm)/[인광 호스트 화합물 9, 10 중 하나 + 화합물d](30nm)/Alq3(30nm)/LiF(0.5nm)/Al(60nm)의 구조를 갖는 유기발광소자를 제조하였다. 이를 각각 샘플 57 내지 59라고 한다.
Comparative Example 3 of Comparative Example 3, except that Compound 12, 24, and 38 represented by Chemical Formulas 12, 24, and 38, disclosed in Synthesis Example, were used as the emission layer phosphorescent host compound instead of Compound a, respectively. ITO / 2-TNATA (80nm) / α-NPD (30nm) / [phosphorescent host compound 9, 10 + compound d] (30nm) / Alq3 (30nm) / LiF (0.5nm) / Al ( An organic light emitting device having a structure of 60 nm) was prepared. These are referred to as samples 57 to 59, respectively.
평가예Evaluation example 3: 비교샘플 3 및 샘플 57~59의 발광 특성 평가 3: Evaluation of Luminescence Characteristics of Comparative Sample 3 and Samples 57-59
비교샘플 3 및 샘플 57~59에 대하여, Keithley SMU 235, PR650를 이용하여 발광휘도, 발광효율, 발광피크를 각각 평가하여, 그 결과를 하기 표 3에 나타내었다. 상기 샘플들은 471~475nm 범위에서 청색 발광피크값을 보여주었다.For Comparative Sample 3 and Samples 57 to 59, luminescence brightness, luminescence efficiency, and luminescence peak were evaluated using Keithley SMU 235 and PR650, respectively, and the results are shown in Table 3 below. The samples showed blue emission peak values in the range of 471-475 nm.
화합물
No.Host
compound
No.
화합물
No.Dopant
compound
No.
[cd/m2]Luminance
[cd / m 2 ]
[cd/A]efficiency
[cd / A]
[nm]Luminous Peak
[nm]
상기 표 3에 보여지는 바와 같이 샘플 56 내지 59는 비교샘플 3에 비하여 향상된 발광 특성을 나타내었다.As shown in Table 3, Samples 56 to 59 showed improved luminescence properties compared to Comparative Sample 3.
평가예 4: 비교샘플 1 및 샘플 5, 13, 18, 25, 34, 47의 수명특성 평가Evaluation Example 4 Evaluation of Life Characteristics of Comparative Sample 1 and Samples 5, 13, 18, 25, 34, and 47
비교샘플 1 및 샘플 5, 13, 18, 25, 34, 47에 대하여, 수명평가장비(LTS-1004C)를 이용하여 DC모드로 휘도 5000nit를 기준으로 발광의 세기가 최초값의 70%까지 감소하는 시간으로 수명을 평가하여, 그 결과를 하기 표 4에 나타내었다.For Comparative Sample 1 and Samples 5, 13, 18, 25, 34 and 47, the intensity of luminescence was reduced to 70% of the initial value based on the luminance 5000 nits in DC mode using the Lifetime Evaluation Equipment (LTS-1004C). Life time was evaluated by time, and the results are shown in Table 4 below.
화합물
No.Host
compound
No.
화합물
No.Dopant
compound
No.
[70% - 시간]life span
[70%-time]
상기 표 4에서 보여주는 바와 같이 샘플 5, 13, 18, 25, 34 및 47은 비교샘플 1에 비하여 향상된 수명특성을 보여주었다.As shown in Table 4, Samples 5, 13, 18, 25, 34, and 47 showed improved life characteristics compared to Comparative Sample 1.
Claims (8)
<화학식 I>
상기 화학식 I에서,
A가 CH, 또는 N이며;
B1, B2 및 B3가 서로 독립적으로 공유결합, 페닐렌기, 또는 비페닐렌기이며,
R1, R2 및 R3가 서로 독립적으로 , , 치환 또는 비치환된 트리아졸기, 9,9'-디(C1-C5알킬)실라플루오레닐기, 9,9'-디(C6-C20아릴)실라플루오레닐기, 디벤조티오페닐기, 트리페닐레닐기 또는 페닐기이며,
CY1, CY2가 서로 독립적으로 치환 또는 비치환된 C6-C50방향족 고리, 또는 치환 또는 비치환된 C2-C50헤테로방향족 고리이며,
CY3가 치환 또는 비치환된 C7-C50방향족 고리, 또는 치환 또는 비치환된 C2-C50헤테로방향족 고리이며,
단, R1, R2 및 R3가 동시에 페닐기가 아니다.An organic light emitting compound represented by formula (I)
(I)
In Formula I,
A is CH or N;
B 1 , B 2 and B 3 are each independently a covalent bond, a phenylene group, or a biphenylene group,
R 1 , R 2 and R 3 are independently of each other , , Substituted or unsubstituted triazole group, 9,9'-di (C 1 -C 5 alkyl) silafluorenyl group, 9,9'-di (C 6 -C 20 aryl) silafluorenyl group, dibenzothio Phenyl group, triphenylenyl group or phenyl group,
CY1 and CY2 are each independently a substituted or unsubstituted C 6 -C 50 aromatic ring, or a substituted or unsubstituted C 2 -C 50 heteroaromatic ring,
CY3 is a substituted or unsubstituted C 7 -C 50 aromatic ring, or a substituted or unsubstituted C 2 -C 50 heteroaromatic ring,
Provided that R 1 , R 2 and R 3 are not a phenyl group at the same time.
CY3가 N-(C6-C20아릴)카바졸, 9,9'-디(C1-C5알킬)플루오렌, 디벤조티오펜, 9,9'-디(C1-C5알킬)실라플루오렌, 1,1'-디(C1-C5알킬)인덴, N-(C6-C20아릴)인돌, 인돌로카바졸 및 이들의 유도체로 이루어진 군으로부터 선택된 화합물로부터 파생된 방향족 또는 헤테로방향족 고리인 것을 특징으로 하는 유기발광화합물.The compound of claim 1, wherein the CY 1 and CY 2 are independently of each other, benzene, N- (C 6 -C 20 aryl) carbazole, 9,9′-di (C 1 -C 5 alkyl) fluorene, dibenzoti Offen, 9,9'-di (C 1 -C 5 alkyl) silafluorene, 1,1'-di (C 1 -C 5 alkyl) indene, N- (C 6 -C 20 aryl) indole, indolo An aromatic or heteroaromatic ring derived from a compound selected from the group consisting of carbazole and derivatives thereof,
CY3 is N- (C 6 -C 20 aryl) carbazole, 9,9'-di (C 1 -C 5 alkyl) fluorene, dibenzothiophene, 9,9'-di (C 1 -C 5 alkyl Derived from a compound selected from the group consisting of silafluorene, 1,1'-di (C 1 -C 5 alkyl) indene, N- (C 6 -C 20 aryl) indole, indolocarbazole and derivatives thereof An organic light emitting compound, characterized in that an aromatic or heteroaromatic ring.
<화학식 1> <화학식 2>
<화학식 3> <화학식 4>
<화학식 5> <화학식 6>
<화학식 7> <화학식 8>
<화학식 9> <화학식 10>
<화학식 11> <화학식 12>
<화학식 13> <화학식 14>
<화학식 15> <화학식 16>
<화학식 17> <화학식 18>
<화학식 19> <화학식 20>
<화학식 21> <화학식 22>
<화학식 23> <화학식 24>
<화학식 25>
<화학식 28>
<화학식 29> <화학식 30>
<화학식 31> <화학식 32>
<화학식 33> <화학식 34>
<화학식 35> <화학식 36>
<화학식 37> <화학식 38>
<화학식 40>
<화학식 41> <화학식 42>
<화학식 43> <화학식 44>
<화학식 45> <화학식 46>
<화학식 47> <화학식 48>
<화학식 49>
<화학식 51> <화학식 52>
<화학식 53> <화학식 54>
The organic light emitting compound of claim 1, wherein the compound is represented by the following Chemical Formulas 1 to 25, 28 to 38, 40 to 49, and 51 to 54:
≪ Formula 1 >< EMI ID =
<Formula 3><Formula4>
<Formula 5><Formula6>
≪ Formula 7 >< EMI ID =
<Formula 9><Formula10>
<Formula 11><Formula12>
<Formula 13><Formula14>
<Formula 15><Formula16>
<Formula 17><Formula18>
<Formula 19><Formula20>
<Formula 21><Formula22>
<Formula 23><Formula24>
<Formula 25>
<Formula 28>
<Formula 29><Formula30>
<Formula 31><Formula32>
<Formula 33><Formula34>
<Formula 35><Formula36>
<Formula 37><Formula38>
<Formula 40>
<Formula 41><Formula42>
<Formula 43><Formula44>
<Formula 45><Formula46>
<Formula 47><Formula48>
<Formula 49>
<Formula 51><Formula52>
<Formula 53><Formula54>
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WO2014046221A1 (en) * | 2012-09-21 | 2014-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
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CN106146470B (en) * | 2015-04-03 | 2019-06-04 | 南京瀚宇彩欣科技有限责任公司 | Electroluminescent organic material and Organnic electroluminescent device |
CN106432200B (en) * | 2015-08-11 | 2019-07-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of material of main part for organic electroluminescence device |
CN109354588B (en) * | 2016-08-19 | 2021-04-27 | 中节能万润股份有限公司 | Organic electroluminescent compound with nitrogen-containing five-membered heterocyclic ring as core and application thereof |
WO2018131877A1 (en) * | 2017-01-12 | 2018-07-19 | 덕산네오룩스 주식회사 | Delayed fluorescence compound, organic electric element using same, and electronic device using same |
JP7172001B2 (en) | 2018-11-27 | 2022-11-16 | エルジー・ケム・リミテッド | Novel compound and organic light-emitting device containing the same |
US11746117B2 (en) | 2018-11-27 | 2023-09-05 | Lg Chem, Ltd. | Heterocyclic compound and organic light emitting device comprising same |
KR102331904B1 (en) | 2018-11-27 | 2021-11-26 | 주식회사 엘지화학 | Novel compound and organic light emitting device comprising the same |
CN110669018A (en) * | 2019-09-27 | 2020-01-10 | 武汉华星光电半导体显示技术有限公司 | A kind of N heterocyclic planar optocoupler output material and preparation method thereof |
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US10818850B2 (en) | 2017-12-22 | 2020-10-27 | Samsung Display Co., Ltd. | Organic electroluminescence device and compound including nitrogen for organic electroluminescence device |
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