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KR101195265B1 - Method for wire bonding - Google Patents

Method for wire bonding Download PDF

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Publication number
KR101195265B1
KR101195265B1 KR1020100088559A KR20100088559A KR101195265B1 KR 101195265 B1 KR101195265 B1 KR 101195265B1 KR 1020100088559 A KR1020100088559 A KR 1020100088559A KR 20100088559 A KR20100088559 A KR 20100088559A KR 101195265 B1 KR101195265 B1 KR 101195265B1
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wire
bonding
metal layer
metal
laser
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KR20120026379A (en
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김승지
홍준기
김재면
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에스케이하이닉스 주식회사
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  • Wire Bonding (AREA)

Abstract

본 발명의 와이어 본딩 방법은, 와이어의 단부에 와이어 볼을 형성하는 단계와, 상기 와이어 볼의 하부면에 금속층을 형성하는 단계와, 그리고 상기 금속층이 형성된 와이어 볼을 반도체 칩의 본딩패드에 접착하는 단계를 포함한다. 본 발명의 와이어 본딩 방법은 캐필러리의 하중을 이용하지 않음으로써 본딩패드의 필링을 방지하여 와이어 본딩 공정과 반도체 패키지의 신뢰성을 향상시킬 수 있고, 제품의 수율을 향상시킬 수 있는 잇점이 있다The wire bonding method of the present invention comprises the steps of forming a wire ball at the end of the wire, forming a metal layer on the lower surface of the wire ball, and bonding the wire ball formed with the metal layer to the bonding pad of the semiconductor chip Steps. The wire bonding method of the present invention does not use the capillary load, thereby preventing the bonding pads from being peeled, thereby improving the reliability of the wire bonding process and the semiconductor package, and improving the yield of the product.

Description

와이어 본딩 방법{Method for wire bonding}Wire bonding method {Method for wire bonding}

본 발명은 와이어 본딩 방법에 관한 것으로서, 본딩패드의 필링을 방지하고 와이어 본딩 및 반도체 패키지의 신뢰성을 향상시킬 수 있는 와이어 본딩 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method, and to a wire bonding method capable of preventing peeling of a bonding pad and improving the reliability of wire bonding and a semiconductor package.

일반적으로 반도체 패키지는 여러 단계의 공정, 예를 들어 소잉 공정, 다이 본딩 공정, 와이어 본딩 공정, 몰딩 공정, 마킹 공정 등을 거쳐 완성된다. 여기서 와이어 본딩 공정은 리드 프레임과 전자회로가 집적되어 있는 반도체 칩 사이의 신호 교환을 위하여 리드 프레임의 리드와 반도체 칩의 패드를 본딩 와이어로 연결하는 공정이다.In general, a semiconductor package is completed through a multi-step process, for example, a sawing process, a die bonding process, a wire bonding process, a molding process, a marking process, and the like. The wire bonding process is a process of connecting the lead of the lead frame and the pad of the semiconductor chip with bonding wires for signal exchange between the lead frame and the semiconductor chip in which the electronic circuit is integrated.

와이어 본딩 공정은 캐필러리(capillary)가 반도체 칩과 리드 프레임 사이를 왕복하면서 본딩 와이어의 양 단부를 반도체 칩의 패드와 리드 프레임의 리드에 접합함으로써 수행된다. 이때, 본딩 와이어는 캐필러리의 이동 궤적에 따라 일정 형상을 갖는 와이어 루프를 형성하면서 반도체 칩의 패드와 리드 프레임의 리드를 연결하게 된다. The wire bonding process is performed by bonding both ends of the bonding wire to the pads of the semiconductor chip and the leads of the lead frame while the capillary reciprocates between the semiconductor chip and the lead frame. At this time, the bonding wire forms a wire loop having a predetermined shape according to the movement trajectory of the capillary and connects the pad of the semiconductor chip and the lead of the lead frame.

도 1은 종래의 멀티 칩 패키지를 나타낸 단면도이다.1 is a cross-sectional view showing a conventional multi-chip package.

도 1을 참조하면, 기판(10)의 상부에 하부칩(13)과 상부 칩(14)이 적층되어 부착되어 있다. 또한, 하부 칩(13)과 상부 칩(14)의 패드(13',14')는 각각 본딩 와이어(12',12)에 의해 기판(10)의 본딩패드(11)와 연결되어 있다. 상기 칩의 패드(13',14')와 본딩 와이어(12',12)를 연결하기 위해서는 본딩 와이어(12',12)의 단부에 와이어 볼을 형성한 후 초음파(ultrasonic), 열 에너지 및 캐필러리가 와이어 볼을 누르는 하중(force)이 가해진다. 이 중 캐필러리가 누르는 하중에 의해 여러가지 문제점이 발생하고 있다.Referring to FIG. 1, the lower chip 13 and the upper chip 14 are stacked and attached to an upper portion of the substrate 10. In addition, the pads 13 ′ and 14 ′ of the lower chip 13 and the upper chip 14 are connected to the bonding pads 11 of the substrate 10 by bonding wires 12 ′ and 12, respectively. In order to connect the pads 13 'and 14' of the chip to the bonding wires 12 'and 12, a wire ball is formed at the ends of the bonding wires 12' and 12, and then ultrasonic, thermal energy and catheter are formed. The force on which the pillar presses the wire ball is applied. Among these, various problems arise by the load which a capillary presses.

도 2는 볼 시어 테스트(Ball Shear Test) 후 알루미늄 패드의 필링(peeling) 현상을 나타낸 사진이다. 최근 골드 와이어어보다 가격이 저렴한 구리 와이어를 사용하려는 노력이 계속되고 있다. 구리는 하드니스(hardness)가 높아 알루미늄 패드와의 안정적인 접착(부착)을 위해서는 캐필러리의 하중을 높일 필요가 있다. 그러나, 이는 도 2에 도시된 것과 같은 알루미늄 패드의 필링 현상을 유발하는 원인이 되고 있다. 이는 와이어 본딩의 신뢰성 나아가 반도체 패키지의 신뢰성을 저하시키는 요인이 되고 있다.FIG. 2 is a photograph showing a peeling phenomenon of an aluminum pad after a ball shear test. Recently, efforts have been made to use copper wire which is cheaper than gold wirer. Since copper has high hardness, it is necessary to increase the capillary load for stable adhesion with the aluminum pad. However, this causes a peeling phenomenon of the aluminum pad as shown in FIG. 2. This is a factor that lowers the reliability of wire bonding and the reliability of the semiconductor package.

그 밖에도 본딩패드 하부에 회로가 들어갈 경우 캐필러리 하중에 의해 회로 손상이 발생하기도 한다. 이를 피하기 위해 본딩패드의 하부 공간을 활용하지 못하므로 전체적인 다이 사이즈의 축소가 어렵고 웨이퍼 넷 다이의 증가가 어려운 문제점이 존재한다.In addition, when the circuit enters the bottom of the bonding pad, the circuit damage may be caused by the capillary load. To avoid this, there is a problem in that it is difficult to reduce the overall die size and increase the wafer net die because the bottom space of the bonding pad is not utilized.

본 발명이 해결하려는 과제는, 본딩패드의 필링을 방지하고 반도체 패키지의 경박단소화가 가능하며, 와이어 본딩 내지 반도체 패키지의 신뢰성을 향상시킬 수 있는 와이어 본딩 방법을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding method that can prevent peeling of a bonding pad, reduce the thickness of a semiconductor package, and improve wire bonding or reliability of a semiconductor package.

본 발명의 일 실시예에 따른 와이어 본딩 방법은, 와이어의 단부에 와이어 볼을 형성하는 단계와, 상기 와이어 볼의 하부면에 금속층을 형성하는 단계와, 그리고 상기 금속층이 형성된 와이어 볼을 반도체 칩의 본딩패드에 접착하는 단계를 포함한다.Wire bonding method according to an embodiment of the present invention, forming a wire ball at the end of the wire, forming a metal layer on the lower surface of the wire ball, and the wire ball formed with the metal layer of the semiconductor chip Bonding to the bonding pads.

일 실시예로, 상기 와이어는 금, 은, 구리 중 어는 하나 이상을 포함할 수 있다.In one embodiment, the wire may include one or more of gold, silver, copper.

일 실시예로, 상기 금속층은 상기 와이어 볼과 본딩패드 간 금속간 화합물을 포함할 수 있다.In one embodiment, the metal layer may include an intermetallic compound between the wire ball and the bonding pad.

일 실시예로, 상기 금속층은 상기 와이어 볼을 구성하는 물질과 본딩패드를 구성하는 물질을 포함할 수 있다.In an embodiment, the metal layer may include a material constituting the wire ball and a material constituting a bonding pad.

일 실시예로, 상기 금속층은 주석을 포함할 수 있다.In one embodiment, the metal layer may include tin.

일 실시예로, 상기 금속층은 고상, 액상 또는 고상과 액상의 혼합형태일 수 있다.In one embodiment, the metal layer may be in a solid phase, a liquid phase, or a mixed form of a solid phase and a liquid phase.

일 실시예로, 상기 와이어 볼의 하부면에 금속층을 형성하는 단계는 레이저 빔에 의해 용융된 액상의 금속물질을 준비하는 단계와, 그리고 상기 와이어 볼의 하부면을 상기 액상의 금속물질에 침지하여 금속피막을 형성하는 단계를 포함할 수 있다.In an embodiment, the forming of the metal layer on the lower surface of the wire ball may include preparing a molten metal material melted by a laser beam, and immersing the lower surface of the wire ball in the liquid metal material. It may include the step of forming a metal film.

일 실시예로, 상기 금속층은 레이저 빔에 의해 기화된 금속물질이 응축되어 생성된 금속피막을 포함할 수 있다.In an embodiment, the metal layer may include a metal film formed by condensation of a metal material vaporized by a laser beam.

일 실시예로, 상기 레이저는 Nd:YAG 레이저, He-Ne 레이저, Ar, 레지어, CO2 레이저 또는 반도체 레이저일 수 있다.In one embodiment, the laser may be a Nd: YAG laser, He-Ne laser, Ar, Reggie, CO 2 laser or semiconductor laser.

일 실시예로, 상기 레이저 빔의 출력밀도는 3MW/cm2 이상일 수 있다.In one embodiment, the output density of the laser beam is 3MW / cm 2 Or more.

일 실시예로, 상기 금속층은 금속시트를 포함할 수 있다.In one embodiment, the metal layer may include a metal sheet.

일 실시예로, 상기 금속층은 나노 금속분말을 포함할 수 있다.In one embodiment, the metal layer may include nano metal powder.

일 실시예로, 상기 금속층이 형성된 와이어 볼을 반도체 칩의 본딩패드에 접착시, 캐필러리의 하중이 와이어 볼에 가해지지 않고 초음파 에너지와 열 에너지를 이용하여 접착할 수 있다.In an embodiment, when the wire ball having the metal layer is attached to the bonding pad of the semiconductor chip, the capillary load may be bonded using ultrasonic energy and thermal energy without being applied to the wire ball.

본 발명의 와이어 본딩 방법은, 캐필러리의 하중을 이용하지 않음으로써 본딩패드의 필링을 방지하여 와이어 본딩 공정과 반도체 패키지의 신뢰성을 향상시킬 수 있고, 제품의 수율을 향상시킬 수 있는 잇점이 있다.The wire bonding method of the present invention has the advantage of preventing the peeling of the bonding pad by not using the load of the capillary, improving the wire bonding process and the reliability of the semiconductor package, and improving the yield of the product.

또한, 본딩패드 하부에 회로패턴을 둘 수 있어 다이의 효율적 이용이 가능하고 나아가 반도체 패키지의 경박단소화가 가능한 잇점이 있다.In addition, since a circuit pattern can be placed under the bonding pad, the die can be efficiently used, and the light and small size of the semiconductor package can be reduced.

도 1은 종래의 멀티 칩 패키지를 나타낸 단면도이다.
도 2는 볼 시어 테스트(Ball Shear Test) 후 알루미늄 패드의 필링(peeling) 현상을 나타낸 사진이다.
도 3a 및 도 3c는 본 발명의 일 실시예에 따른 금속층이 형성된 와이어 볼을 나타낸 단면도이다.
도 4a 내지 도 4d는 본 발명의 일 실시예에 따른 와이어 본딩 공정의 흐름을 나타낸 단면도이다.
도 5a 내지 도 5c는 본 발명의 일 실시예에 따른 금속피막 형성방법을 나타낸 개념도이다.
도 6a 및 도 6b는 본 발명의 일 실시예에 따른 금속시트 형성방법을 나타낸 개념도이다.1 is a cross-sectional view showing a conventional multi-chip package.
FIG. 2 is a photograph showing a peeling phenomenon of an aluminum pad after a ball shear test.
3A and 3C are cross-sectional views illustrating wire balls formed with a metal layer according to an embodiment of the present invention.
4A to 4D are cross-sectional views illustrating a flow of a wire bonding process according to an embodiment of the present invention.
5A to 5C are conceptual views illustrating a metal film forming method according to an embodiment of the present invention.
6A and 6B are conceptual views illustrating a metal sheet forming method according to an embodiment of the present invention.

도 3a 및 도 3c는 본 발명의 일 실시예에 따른 금속층이 형성된 와이어 볼을 나타낸 단면도이다.3A and 3C are cross-sectional views illustrating wire balls formed with a metal layer according to an embodiment of the present invention.

도 3a 내지 도 3c를 참조하면, 와이어 본딩 공정 중 와이어(100)의 단부에 와이어 볼(102) 형성 후 와이어 볼(102)의 하부면에 형성되는 금속층의 예로 금속피막(104), 금속시트(106) 및 금속분말(108)을 나타낸 것이다. 와이어(100)는 금(Au), 은(Ag) 및 구리(Cu) 중 어느 하나 이상을 포함하는 와이어일 수 있으나 본 발명이 이에 제한되는 것은 아니다. 금은 화학적으로 안정된 금속이며 대기중에서 표면 산화없이 볼을 형성할 수 있는 장점이 있으나 가격이 높은 것이 단점이다. 구리 와이어, 금-은 와이어는 금 와이어에 비해 전기전도도가 떨어지나 가격이 낮은 장점이 있다.3A to 3C, an example of the metal layer formed on the lower surface of the wire ball 102 after the wire ball 102 is formed at the end of the wire 100 during the wire bonding process, the metal film 104 and the metal sheet ( 106 and the metal powder 108 is shown. The wire 100 may be a wire including any one or more of gold (Au), silver (Ag), and copper (Cu), but the present invention is not limited thereto. Gold is a chemically stable metal and has the advantage of being able to form balls without surface oxidation in the air, but its high price is a disadvantage. Copper and gold-silver wires have lower electrical conductivity than gold wires, but have a lower price.

와이어 볼(102)은 반도체 칩의 본딩패드와 물리적, 전기적으로 연결되게 되며, 금속층(104, 106, 108)은 와이어 볼(102)과 본딩패드의 연결을 도와주는 역할을 한다. 예를 들어 금속층(104, 106, 108)은 와이어 볼(102)을 구성하는 물질과 반도체 칩의 본딩패드를 구성하는 물질 사이의 금속간 화합물(intermetallic compound)을 포함할 수도 있고, 와이어 볼(102)을 구성하는 물질과 추후 와이어 볼(102)이 접착되는 본딩패드를 구성하는 물질을 포함할 수도 있다. 구체적 예로, 금 와이어와 알루미늄 본딩패드인 경우 금속층(104, 106, 108)은 금-알루미늄 합금막을 포함할 수 있고, 금 와이어와 구리 본딩패드인 경우 금속층(104, 106, 108)은 금-구리 합금을 포함일 수 있다. 또 다른 예로 구리 와이어와 구리 본딩패드, 금 와이어와 금 본딩패드인 경우에는 주석(Sn) 또는 주석을 포함하는 합금일 수 있다. 주석을 포함하는 합금으로는 주석에 금(Au), 은(Ag), 구리(Cu), 인듐(In), 납(Pb), 비스무스(Bi) 또는 아연(Zn) 등의 금속이 하나 이상 포함된 합금일 수 있다.The wire balls 102 are physically and electrically connected to the bonding pads of the semiconductor chip, and the metal layers 104, 106, and 108 serve to connect the wire balls 102 and the bonding pads. For example, the metal layers 104, 106, 108 may include an intermetallic compound between the material constituting the wire ball 102 and the material constituting the bonding pad of the semiconductor chip, and the wire ball 102. ) And a material constituting a bonding pad to which the wire ball 102 is bonded. As a specific example, in the case of the gold wire and the aluminum bonding pad, the metal layers 104, 106 and 108 may include a gold-aluminum alloy layer. In the case of the gold wire and the copper bonding pad, the metal layers 104, 106 and 108 may be the gold-copper. Alloys. As another example, the copper wire and the copper bonding pad, and the gold wire and the gold bonding pad may be tin (Sn) or an alloy containing tin. The alloy containing tin includes one or more metals such as gold (Au), silver (Ag), copper (Cu), indium (In), lead (Pb), bismuth (Bi), or zinc (Zn). It may be an alloy.

금속피막(104)은 와이어 볼(102)의 하부면에 얇은 피막 형태로 형성될 수도 있고 고상, 액상 및 고상과 액상의 혼합형태일 수 있다. 금속시트(106)는 접착제가 코팅된 금속시트일 수 있으며, 금속분말(108)은 나노 금속분말이 바람직하며, 그 표면이 접착제가 코팅되거나 와이어 볼(102)의 하부면에 접착제가 코팅되고 금속분말(108)에는 접착제가 코팅되지 않을 수도 있다.The metal film 104 may be formed in the form of a thin film on the lower surface of the wire ball 102 or may be in the form of a solid phase, a liquid phase, and a mixture of a solid phase and a liquid phase. The metal sheet 106 may be a metal sheet coated with an adhesive, and the metal powder 108 is preferably a nano metal powder, the surface of which is coated with an adhesive or an adhesive is coated on the lower surface of the wire ball 102 The powder 108 may not be coated with an adhesive.

나노 금속분말의 제조는 물리적 방법과 화학적 방법을 사용하여 제조될 수 있다. 물리적 방법의 예를 들면, 금속물질을 가열시키고 이를 냉각, 응축시켜 분말을 제조하는 증발응축법을 사용할 수 있다. 구체적으로, 금속물질이 증발하는 용기 내의 압력을 0.01 ~ 수백 torr 범위 내로 설정하고 He, Ar, Xe, Ne 등의 불활성 가스 또는 O2, CH4, C6H6, NH4등의 활성 가스 분위기에서 대상 금속물질을 가열하여 증발, 응축시킬 수 있다. 가열 방법은 저항 가열법, 플라즈마 가열법, 전자빔 가열법, 유도 가열법 및 레이저 가열법 등을 사용할 수 있다. 화학적 방법은 기상 합성법, 액상 합성법 및 고상 합성법을 통해 나노 금속분발을 제조할 수 있다.The preparation of nano metal powders can be made using physical and chemical methods. As an example of a physical method, an evaporative condensation method may be used in which a metal material is heated, cooled, and condensed to produce a powder. Specifically, the pressure in the vessel in which the metal material evaporates is set within the range of 0.01 to several hundred torr and in an inert gas such as He, Ar, Xe, Ne, or in an active gas atmosphere such as O 2 , CH 4 , C 6 H 6 , or NH 4. The target metal material can be heated to evaporate and condense. As the heating method, a resistance heating method, a plasma heating method, an electron beam heating method, an induction heating method, a laser heating method, or the like can be used. Chemical methods can be produced nano-metal powder through gas phase synthesis, liquid phase synthesis and solid phase synthesis.

도 4a 내지 도 4d는 본 발명의 일 실시예에 따른 와이어 본딩 공정의 흐름을 나타낸 단면도이다. 4A to 4D are cross-sectional views illustrating a flow of a wire bonding process according to an embodiment of the present invention.

도 4a를 참조하면, 와이어(100)의 단부에 와이어 볼(102)를 형성한다. 와이어(100)는 캐필러리(110)에 설치될 수 있으며, 방전기(112)가 전기적 스파크(EFO: Electronic Flame Off)를 발생시켜 와이어 볼(102)을 형성할 수 있다. 와이어(100)는 클램프(114)에 의해 고정 내지 상하 이동될 수 있으며, 와이어 롤(도시하지 않음)에 감긴 상태에서 캐필러리(110)에 공급될 수 있다.Referring to FIG. 4A, a wire ball 102 is formed at an end of the wire 100. The wire 100 may be installed in the capillary 110, and the discharger 112 may generate an electrical spark (EFO) to form the wire ball 102. The wire 100 may be fixed or moved up and down by the clamp 114, and may be supplied to the capillary 110 in a state of being wound on a wire roll (not shown).

도 4b를 참조하면, 와이어 볼(102)의 하부면에 금속층을 형성한다. 도 3b에는 설명의 편의상 금속층의 예로 금속피막(104)을 나타냈으나 금속시트, 금속분말 등이 모두 가능하다. 금속피막(104)은 전술한 바와 같이 와이어 볼(102)을 구성하는 물질과 반도체 칩의 본딩패드를 구성하는 물질 사이의 금속간 화합물을 포함할 수 있다. 예를 들어, 와이어가 금 와이어이고 금속층이 주석으로 이루어진 경우, 와이어 볼과 주석 간에 AuSn4, AuSn2, AuSn, Au5Sn, Au10Sn 등과 같은 금속간 화합물이 생성될 수 있다. 일반적으로 금 함량이 높은 금속간 화합물은 기계적 특성이 우수하나, 주석의 함량이 높은 금속간 화합물은 취성이 높아질 수 있으므로 금속피막(104)을 얇게 형성하는 것이 좋다. 또한, 전술한 바와 같이 금속피막(104)은 와이어 볼(102)을 구성하는 물질과 본딩패드를 구성하는 물질을 포함할 수도 있다. Referring to FIG. 4B, a metal layer is formed on the bottom surface of the wire ball 102. 3B illustrates a metal film 104 as an example of the metal layer for convenience of description, but a metal sheet, a metal powder, or the like may be used. As described above, the metal film 104 may include an intermetallic compound between a material constituting the wire ball 102 and a material constituting the bonding pad of the semiconductor chip. For example, when the wire is a gold wire and the metal layer is made of tin, an intermetallic compound such as AuSn 4 , AuSn 2 , AuSn, Au 5 Sn, Au 10 Sn, or the like may be generated between the wire ball and the tin. In general, an intermetallic compound having a high gold content is excellent in mechanical properties, but an intermetallic compound having a high tin content may have high brittleness, so it is preferable to form a thin metal film 104. In addition, as described above, the metal film 104 may include a material constituting the wire ball 102 and a material constituting the bonding pad.

도 4c를 참조하면, 금속층이 형성된 와이어 볼을 반도체 칩(200)의 본딩패드(202)에 접착시킨다. 와이어 본딩 장치는 XY 스테이지를 통해 캐필러리(110)를 반도체 칩(200)의 본딩패드(202) 위로 위치시킨 후 캐필러리(110)를 아래로 내려 본딩패드(202)에 접착시킨다. 이때 패턴인식장치를 통해 본딩패드(202)의 위치를 자동으로 찾아낼 수도 있으며, 수동으로 본딩패드(202) 위치를 찾아낼 수도 있다. 또한, 캐필러리(110)를 이동시키지 않고 반도체 칩(200)을 이동시키는 것도 가능하다. 와이어 볼(102)과 반도체 칩의 본딩패드(202) 사이의 금속간 화합물이 형성된 와이어 볼을 사용함으로써, 반도체 칩의 본딩패드(202)에 하중을 주지 않고 초음파(untrasonic) 에너지와 열 에너지만으로 접착시킬 수 있다. 반도체 칩(200)은 히터 블럭 위에 놓여질 수 있고 이를 통해 본딩패드(202)에 열 에너지가 전달될 수 있다. 본딩패드(202)는 구리 또는 알루미늄 중 적어도 어느 하나 이상을 포함할 수 있다. 일부로서 알루미늄을 본딩패드로 하고 전도성 향상을 위해 구리를 증착 또는 코팅할 수도 있고, 구리와 알루미늄의 합금일 수도 있다.Referring to FIG. 4C, the wire ball on which the metal layer is formed is bonded to the bonding pad 202 of the semiconductor chip 200. The wire bonding apparatus positions the capillary 110 over the bonding pad 202 of the semiconductor chip 200 through the XY stage, and then lowers the capillary 110 to adhere to the bonding pad 202. In this case, the position of the bonding pad 202 may be automatically found through the pattern recognition device, or the position of the bonding pad 202 may be manually found. In addition, the semiconductor chip 200 may be moved without moving the capillary 110. By using a wire ball in which an intermetallic compound is formed between the wire ball 102 and the bonding pad 202 of the semiconductor chip, adhesion is performed only by ultrasonic energy and thermal energy without applying a load to the bonding pad 202 of the semiconductor chip. You can. The semiconductor chip 200 may be placed on the heater block, and thermal energy may be transferred to the bonding pad 202. The bonding pads 202 may include at least one of copper or aluminum. As a part, aluminum may be used as a bonding pad, and copper may be deposited or coated to improve conductivity, or may be an alloy of copper and aluminum.

도 4d를 참조하면, 리드 프레임, 인쇄회로기판(PCB: Printed Circuit Board) 등의 접속단자(210)에 스티치 본드를 수행한다. 이때 초음파 진동이 캐필러리(110) 끝을 통해 본드에 전해질 수 있다. 이후 클램프(114)가 와이어(100)를 끊어 다음 공정을 수행하게 된다.
Referring to FIG. 4D, stitch bonding is performed on a connection terminal 210 such as a lead frame and a printed circuit board (PCB). At this time, the ultrasonic vibration may be delivered to the bond through the capillary 110 end. Then, the clamp 114 breaks the wire 100 to perform the next process.

본 발명은 와이어 볼(102)의 하부면에 금속피막(104)을 형성하는 방법에 제한이 없으며, 도 5a 내지 도 5c는 본 발명의 일 실시예에 따른 금속피막 형성방법을 나타낸 개념도이다.The present invention is not limited to the method of forming the metal film 104 on the lower surface of the wire ball 102, Figures 5a to 5c is a conceptual diagram showing a method for forming a metal film according to an embodiment of the present invention.

도 5a를 참조하면, 도가니(302)에 담긴 금속물질(304)에 레이저 빔(300)을 가하면 레이저 빔에 의해 조사된 부분에 순간적으로 액상의 금속물질(306)이 생성된다. 레이저는 Nd:YAG 레이저, He-Ne 레이저, Ar, 레지어, CO2 레이저 또는 GaAs, InP, InAs 등의 반도체 레이저 등을 사용할 수 있으며 본 발명이 이에 제한되는 것은 아니다. 레이저 빔(300)은 펄스 형태의 레이저일 수 있다.Referring to FIG. 5A, when the laser beam 300 is applied to the metal material 304 contained in the crucible 302, the liquid metal material 306 is instantaneously generated at the portion irradiated by the laser beam. The laser may be a Nd: YAG laser, He-Ne laser, Ar, laser, CO 2 laser or a semiconductor laser such as GaAs, InP, InAs, and the like, but the present invention is not limited thereto. The laser beam 300 may be a pulsed laser.

금속물질(304)은 전술한 바와 같이, 와이어 볼과 반도체 칩의 본딩패드 사이의 금속간 화합물을 포함하거나 와이어 볼을 구성하는 물질과 본딩패드를 구성하는 물질을 포함할 수 있다. 예를 들어, 금 와이어와 알루미늄 본딩패드인 경우 금속물질(304)은 금 분말과 알루미늄 분말의 혼합물을 포함할 수 있고, 금 와이어와 구리 본딩패드인 경우 금 분말과 구리 분말의 혼합물을 포함할 수 있다. 또 다른 예로 구리 와이어와 구리 본딩패드, 금 와이어와 금 본딩패드인 경우에는 주석 분말 또는 주석 분발과 금, 은, 구리, 인듐, 납, 비스무스, 아연 분말 등의 혼합물일 수 있다. 또한, 금속물질(304)은 분말 형태가 아닌 금속박판 형태일 수도 있고 그 밖의 다른 형태일 수도 있다.As described above, the metal material 304 may include an intermetallic compound between the wire ball and the bonding pad of the semiconductor chip, or may include a material constituting the wire ball and a material constituting the bonding pad. For example, the metal material 304 may include a mixture of gold powder and aluminum powder in the case of the gold wire and the aluminum bonding pad, and may include a mixture of gold powder and copper powder in the case of the gold wire and the copper bonding pad. have. As another example, in the case of a copper wire and a copper bonding pad, and a gold wire and a gold bonding pad, tin powder or a tin powder and a mixture of gold, silver, copper, indium, lead, bismuth, and zinc powder may be used. In addition, the metal material 304 may be in the form of a metal sheet, not in powder form, or may be in another form.

한편, 레이저 빔의 출력밀도를 높이면 레이저 빔이 조사된 영역 주위에 플라즈마 상태가 생성되고 금속물질(304)의 표면이 증발하여 레이저 빔이 조사된 영역 주위에 기화된 금속물질이 존재하게 된다. 이러한 기화된 금속물질을 금속피막 형성에 이용할 수도 있다. 플라즈마의 형성 내지 금속물질의 기화가 가능한 레이저 빔의 출력밀도는 2MW/cm2이상일 수 있고, 바람직하게는 3MW/cm2이다. On the other hand, when the output density of the laser beam is increased, a plasma state is generated around the area where the laser beam is irradiated, and the surface of the metal material 304 evaporates, so that the vaporized metal material exists around the area where the laser beam is irradiated. Such vaporized metal materials may be used to form the metal film. The output density of the laser beam capable of forming the plasma or vaporizing the metal material may be 2MW / cm 2 or more, and preferably 3MW / cm 2 .

도 5b를 참조하면, 와이어 볼(102)을 액상의 금속물질(306) 위로 이동시킨 후 침지한다. 와이어 볼(102)의 이동은 자동화된 위치이동장치(XY 스테이지)에 의해 정밀하게 제어될 수 있다. 물론, 와이어 볼(102)을 고정시키고 도가니(302)를 이동시킬수도 있다.Referring to FIG. 5B, the wire ball 102 is immersed after moving the liquid metal material 306. The movement of the wire ball 102 can be precisely controlled by an automated position shifter (XY stage). Of course, the wire ball 102 may be fixed and the crucible 302 may be moved.

도 5c를 참조하면, 액상의 금속물질(306)에 침지된 와이어 볼(102)을 들어 올리면 그 하부면에 금속피막(104)이 형성된다. 한편, 금속피막(104)은 액상의 금속물질(306)로부터만 형성될 수도 있고, 전술한 바와 같이 고출력 레이저 빔을 가해 기화된 금속물질이 응축되어 생성될 수도 있고, 양자가 혼합된 형태일 수도 있다. 또한, 형성된 금속피막(104)은 액상과 고상이 혼합된 형태일 수 있다. 한편, 와이어 볼(102)의 이동과 레이저 빔의 조사의 순서는 서로 바뀔 수 있다. 즉, 와이어 볼을 금속물질 위로 이동시킨 후 금속물질(304)에 레이저 빔을 조사할 수도 있다.Referring to FIG. 5C, when the wire ball 102 immersed in the liquid metal material 306 is lifted up, a metal film 104 is formed on the lower surface thereof. On the other hand, the metal film 104 may be formed only from the liquid metal material 306, as described above may be generated by condensation of the vaporized metal material by applying a high-power laser beam, or may be a mixed form of both have. In addition, the formed metal film 104 may be a mixture of a liquid phase and a solid phase. On the other hand, the order of the movement of the wire ball 102 and the irradiation of the laser beam may be interchanged. In other words, the laser beam may be irradiated onto the metal material 304 after the wire ball is moved over the metal material.

도 6a 및 도 6b는 본 발명의 일 실시예에 따른 금속시트 형성방법을 나타낸 개념도이다.6A and 6B are conceptual views illustrating a metal sheet forming method according to an embodiment of the present invention.

도 6a를 참조하면, 금속층은 금속시트(106)를 포함하는 형태일 수 있다. 즉, 금속시트(106)에 접착층(107)이 형성될 수 있다. 접착층(107)은 통상의 열가소성 접착제, 열경화성 접착제, UV경화성 접착제 등을 포함할 수 있으나 열가소성 접착제를 포함하는 것이 바람직하다. 또한, 전도성 접착제일 수도 있다.Referring to FIG. 6A, the metal layer may have a shape including the metal sheet 106. That is, the adhesive layer 107 may be formed on the metal sheet 106. The adhesive layer 107 may include a conventional thermoplastic adhesive, a thermosetting adhesive, a UV curing adhesive, and the like, but preferably includes a thermoplastic adhesive. It may also be a conductive adhesive.

금속시트(106)는 와이어 볼과 반도체 칩의 본딩패드 사이의 금속간 화합물을 포함할 수도 있고, 와이어 볼을 구성하는 물질과 본딩패드를 구성하는 물질을 포함할 수도 있다. 예를 들어, 금 와이어와 알루미늄 본딩패드인 경우 금속층(106b)은 금과 알루미늄 합금층일 수 있고, 금 와이어와 구리 본딩패드인 경우 금과 구리의 합금층일 수 있다. 또 다른 예로 구리 와이어와 구리 본딩패드, 금 와이어와 금 본딩패드인 경우에는 주석층 또는 주석과 금, 은, 구리, 인듐, 납, 비스무스, 아연 등과의 합금층일 수 있다. 금속시트(106)는 자동화된 컨베이어 벨트 등에 공급할 수 있다.The metal sheet 106 may include an intermetallic compound between the wire ball and the bonding pad of the semiconductor chip, and may include a material constituting the wire ball and a material constituting the bonding pad. For example, in the case of the gold wire and the aluminum bonding pad, the metal layer 106b may be a gold and the aluminum alloy layer, and in the case of the gold wire and the copper bonding pad, the metal layer 106b may be the alloy layer of gold and copper. In another example, in the case of a copper wire, a copper bonding pad, and a gold wire and a gold bonding pad, the tin layer may be a tin layer or an alloy layer of tin, gold, silver, copper, indium, lead, bismuth, and zinc. The metal sheet 106 may be supplied to an automated conveyor belt or the like.

도 6b를 참조하면, 와이어 볼(102) 또는 금속시트(106)의 위치를 이동시켜 양자 간을 부착한다. 와이어 볼(102)과 반도체 칩의 본딩패드를 첩착하는 공정에서 가해지는 열 에너지에 의해 접착층(107)은 점도가 낮아져 와이어 볼(102)과 반도체 칩의 본딩패드 간 접착에 방해가 되지 않도록 열가소성 접착제를 사용할 수 있다.Referring to FIG. 6B, the wire ball 102 or the metal sheet 106 may be moved to attach the two to each other. The adhesive layer 107 has a low viscosity due to the heat energy applied in the process of adhering the wire ball 102 and the bonding pad of the semiconductor chip to prevent the adhesion between the wire ball 102 and the bonding pad of the semiconductor chip. Adhesives can be used.

100...와이어 102...와이어 볼
104...금속피막 106...금속시트
108...나노 금속분말 110...캐필러리
112...방전기 114...클램프
200...반도체 칩 202...본딩패드
300...레이저 빔 302...도가니
304...금속물질 306...액상의 금속물질100 ... wire 102 ... wire ball
104 ... metal film 106 ... metal sheet
108 ... nanometal powder 110 ... capillary
112 ... discharger 114 ... clamp
200 ... semiconductor chip 202 ... bonding pad
300 laser beam 302 crucible
304 Metallic material 306 Liquid metal material

Claims (13)

와이어의 단부에 와이어 볼을 형성하는 단계;
레이저 빔에 의해 용융된 액상의 금속물질을 준비하는 단계;
상기 와이어 볼의 하부면을 상기 액상의 금속물질에 침지하여 상기 와이어 볼의 하부면에 금속층을 형성하는 단계; 및
상기 금속층이 형성된 와이어 볼을 반도체 칩의 본딩패드에 접착하는 단계를 포함하는 와이어 본딩 방법.Forming a wire ball at the end of the wire;
Preparing a molten metal material melted by a laser beam;
Forming a metal layer on the lower surface of the wire ball by immersing the lower surface of the wire ball in the liquid metal material; And
Bonding the wire ball having the metal layer formed thereon to a bonding pad of a semiconductor chip. 청구항 2은(는) 설정등록료 납부시 포기되었습니다.Claim 2 has been abandoned due to the setting registration fee. 제1항에 있어서,
상기 와이어는 금, 은, 구리 중 어는 하나 이상을 포함하는 와이어 본딩 방법.The method of claim 1,
The wire bonding method comprises at least one of gold, silver, copper. 청구항 3은(는) 설정등록료 납부시 포기되었습니다.Claim 3 has been abandoned due to the setting registration fee. 제1항에 있어서,
상기 금속층은 상기 와이어 볼과 본딩패드 간 금속간 화합물을 포함하는 와이어 본딩 방법.The method of claim 1,
The metal layer is a wire bonding method comprising an intermetallic compound between the wire ball and the bonding pad. 삭제delete 청구항 5은(는) 설정등록료 납부시 포기되었습니다.Claim 5 was abandoned upon payment of a set-up fee. 제1항에 있어서,
상기 금속층은 주석을 포함하는 와이어 본딩 방법.The method of claim 1,
And the metal layer comprises tin. 청구항 6은(는) 설정등록료 납부시 포기되었습니다.Claim 6 has been abandoned due to the setting registration fee. 제1항에 있어서,
상기 금속층은 고상, 액상 또는 고상과 액상의 혼합형태인 와이어 본딩 방법.The method of claim 1,
The metal layer is a wire bonding method of a solid phase, a liquid phase or a mixed form of a solid phase and a liquid phase. 삭제delete 청구항 8은(는) 설정등록료 납부시 포기되었습니다.Claim 8 was abandoned when the registration fee was paid. 제1항에 있어서,
상기 금속층은 레이저 빔에 의해 기화된 금속물질이 응축되어 생성된 금속피막을 포함하는 와이어 본딩 방법.The method of claim 1,
The metal layer may include a metal film formed by condensation of a metal material vaporized by a laser beam. 청구항 9은(는) 설정등록료 납부시 포기되었습니다.Claim 9 has been abandoned due to the setting registration fee. 제1항 또는 제8항에 있어서,
상기 레이저는 Nd:YAG 레이저, He-Ne 레이저, Ar, 레지어, CO2 레이저 또는 반도체 레이저인 와이어 본딩 방법.The method according to claim 1 or 8,
The laser is a Nd: YAG laser, He-Ne laser, Ar, laser, CO 2 laser or a semiconductor laser. 청구항 10은(는) 설정등록료 납부시 포기되었습니다.Claim 10 has been abandoned due to the setting registration fee. 제8항에 있어서,
상기 레이저 빔의 출력밀도는 3MW/cm2 이상인 와이어 본딩 방법. 9. The method of claim 8,
The output density of the laser beam is 3MW / cm 2 The above wire bonding method. 삭제delete 삭제delete 청구항 13은(는) 설정등록료 납부시 포기되었습니다.Claim 13 was abandoned upon payment of a registration fee. 제1항에 있어서,
상기 금속층이 형성된 와이어 볼을 반도체 칩의 본딩패드에 접착시, 캐필러리의 하중이 와이어 볼에 가해지지 않고 초음파 에너지와 열 에너지를 이용하여 접착하는 와이어 본딩 방법.The method of claim 1,
And bonding the wire ball having the metal layer to the bonding pad of the semiconductor chip, using ultrasonic energy and thermal energy, without applying the capillary load to the wire ball.
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Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS59150437A (en) 1983-02-15 1984-08-28 Toshiba Corp Wire bonding method
JP2002076051A (en) 2000-09-01 2002-03-15 Nec Corp Bonding pad structure and bonding method of semiconductor device
JP2008235314A (en) 2007-03-16 2008-10-02 Fujitsu Ltd Manufacturing method of semiconductor device and semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150437A (en) 1983-02-15 1984-08-28 Toshiba Corp Wire bonding method
JP2002076051A (en) 2000-09-01 2002-03-15 Nec Corp Bonding pad structure and bonding method of semiconductor device
JP2008235314A (en) 2007-03-16 2008-10-02 Fujitsu Ltd Manufacturing method of semiconductor device and semiconductor device

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