KR101169857B1 - Emitting display device having nano wire emitting transistor - Google Patents

Abstract

The present invention relates to a light emitting display device, and an object of the present invention is to provide a light emitting display device having a nanowire light emitting transistor having a semiconductor function and a light emitting function simultaneously.
To this end, the present invention provides a nanowire light emitting transistor electrically connected between a first power line and a second power line, a nanowire light emitting transistor, a capacitor electrically connected between a second power line and a data line, a nanowire light emitting transistor, a data line, A light emitting display device including a switching transistor electrically connected between a capacitor and a scan line is disclosed.

Description

Light emitting display device having a nanowire light emitting transistor {EMITTING DISPLAY DEVICE HAVING NANO WIRE EMITTING TRANSISTOR}

One embodiment of the present invention relates to a light emitting display device having a nanowire light emitting transistor.

Liquid crystal displays, which are used in the mainstream of flat panel displays, do not use self-luminescent elements structurally, and thus require an additional light emitting component called a back light. As a result, liquid crystal displays have limitations in thickness and structure simplification.

Active Matrix Organic Light Emitting Devices (AMOLEDs), which overcome these limitations of liquid crystal displays, use self-emissive organic electroluminescent devices, eliminating the need for backlights or color filters. Do not. As a result, AMOLED is structurally simple and has high light extraction efficiency.

Despite these advantages of self-luminous devices, AMOLEDs are still difficult to use due to material limitations. Encapsulation is necessary because of the material properties vulnerable to moisture, and the forming process also has no specific method other than vacuum deposition. In order to overcome this limitation, methods such as expanding materials into polymers, inkjet, and laser induced thermal imaging (LITI) have been sought. However, methods for satisfying characteristics and lifetime have not been generalized. .

An object of the present invention is to provide a light emitting display device which can simplify the manufacturing process and increase the light emitting area compared to the driving circuit part by using a nanowire light emitting transistor having a semiconductor function and a light emitting function at the same time. have.

Another object of the present invention is to provide a light emitting display device which can further simplify the manufacturing process by implementing not only a nano wire light emitting transistor but also a switching transistor and a capacitor using nano wires.

A light emitting display device having a nanowire light emitting transistor according to an embodiment of the present invention includes a nanowire light emitting transistor electrically connected between a first power line and a second power line; A capacitor electrically connected between the nanowire light emitting transistor, the second power line, and the data line; And a switching transistor electrically connected between the nanowire light emitting transistor, the data line, the capacitor, and the scan line.

The nanowire light emitting transistor may include a gate electrode; A gate insulating film covering the gate electrode; A nanowire formed on the gate insulating layer corresponding to the gate electrode; A first electrode connected to one end of the nanowire; And a second electrode connected to the other end of the nanowire, wherein the first electrode and the second electrode have different work functions.

The nano wire light emitting transistor is a nano wire; A gate insulating film covering the nanowires; A gate electrode formed on the gate insulating layer corresponding to the nanowires; An interlayer insulating film covering the gate electrode and a gate insulating film formed around the gate electrode; A first electrode connected to one end of the nanowire through the interlayer insulating film; And a second electrode connected to the other end of the nanowire through the interlayer insulating layer, wherein the first electrode and the second electrode have different work functions.

The nano wire light emitting transistor is a nano wire; A first electrode connected to one end of the nanowire; A second electrode connected to the other end of the nanowire; A gate insulating layer covering the nanowires, the first electrode, and the second electrode; And a gate electrode formed on the gate insulating layer corresponding to the nanowires, wherein the first electrode and the second electrode have different work functions.

The switching transistor comprises a gate electrode; A gate insulating film covering the gate electrode; A nanowire formed on the gate insulating layer corresponding to the gate electrode; A first electrode connected to one end of the nanowire; And a second electrode connected to the other end of the nanowire.

The switching transistor is a nano wire; A gate insulating film covering the nanowires; A gate electrode formed on the gate insulating layer corresponding to the nanowires; An interlayer insulating film covering the gate electrode and a gate insulating film formed around the gate electrode; A first electrode connected to one end of the nanowire through the interlayer insulating film; And a second electrode connected to the other end of the nanowire through the interlayer insulating layer.

The switching transistor is a nano wire; A first electrode connected to one end of the nanowire; A second electrode connected to the other end of the nanowire; A gate insulating layer covering the nanowires, the first electrode, and the second electrode; And a gate electrode formed on the gate insulating layer corresponding to the nanowires.

The capacitor may include nanowires formed on the substrate; An insulation layer surrounding the nanowires; A first electrode surrounding the insulating layer; And a second electrode connected to the nanowire exposed through the insulating layer. In the substrate, grooves are formed in a region corresponding to the insulator.

The capacitor is a nano wire; A first electrode connected to the nanowires; An insulation layer covering the nanowires; And a second electrode formed on the insulating layer corresponding to the nanowires.

The first electrode is electrically connected to the first power line, the second electrode is electrically connected to the second power line, and the work function of the first electrode is greater than the work function of the second electrode.

The gate electrode is a transparent conductive oxide or opaque metal.

The nano wire

CaS: Eu, ZnS: Sm, ZnS: Mn, Y2O2S: Eu, Y2O2S: Eu, Bi, Gd2O3: Eu, (Sr, Ca, Ba, Mg) P2O7: Eu, Mn, CaLa2S4: Ce, SrY2S4: Eu, ( Ca, Sr) S: Eu, SrS: Eu, Y2O3: Eu, YVO4: Eu, Bi,

ZnS: Tb, ZnS: Ce, Cl, ZnS: Cu, Al, Gd2O2S: Tb, Gd2O3: Tb, Zn, Y2O3: Tb, Zn, SrGa2S4: Eu, Y2SiO5: Tb, Y2Si2O7: Tb, Y2O2O: Tb, Z2 Ag, ZnO: Cu, Ga, CdS: Mn, BaMgAl10O17: Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2S4: Eu, Ca8Mg (SiO4) 4Cl2: Eu, Mn, YBO3: Ce, Tb, Ba2SiO4: Eu, (Ba, Sr) 2SiO4: Eu, Ba2 (Mg, Zn) Si2O7: Eu, (Ba, Sr) Al2O4: Eu, Sr2Si3O8,2SrCl2: Eu,

SrS: Ce, ZnS: Tm, ZnS: Ag, Cl, ZnS: Te, Zn2SiO4: Mn, YSiO5: Ce, (Sr, Mg, Ca) 10 (PO4) 6Cl2: Eu, BaMgAl10O17: Eu, BaMg2Al16O27: Eu,

YAG (Yittrium, Alumium, Garnet) or a mixture or compound using CaxSrx-1Al2O3: Eu + 2 synthesized with CaAl2O3 and SrAl2O3, or

The nanowires are any one selected from the group consisting of ZnO, In2O3, SnO2, SiGe, GaN, InP, InAs, Ge, GaP, GaAs, GaAs / P, InAs / P, ZnS, ZnSe, CdS, CdSe It is formed as a mixture or compound. The nanowire may further include a dopant which is any one selected from the group consisting of Ce, Tm, Ag, Cl, Te, Mn, Eu, Bi, Tb, Cu, Zn, Ga, or a mixture or compound thereof.

The nanowire of the switching transistor or the capacitor is selected from the group consisting of ZnO, In2O3, SnO2, SiGe, GaN, InP, InAs, Ge, GaP, GaAs, GaAs / P, InAs / P, ZnS, ZnSe, CdS, CdSe It is formed of either one or mixtures or compounds thereof. In the nanowire of the switching transistor or the capacitor, a dopant which is any one selected from the group consisting of Ce, Tm, Ag, Cl, Te, Mn, Eu, Bi, Tb, Cu, Zn, Ga, or a mixture or compound thereof is further included. Can be added.

The first and second electrodes of the switching transistor have the same work function or different work functions, and a light shielding member is further formed on the upper or lower portion of the switching transistor.

One embodiment of the present invention is to provide a light emitting display device by using a nano-wire light emitting transistor having a semiconductor function and a light emitting function at the same time, a simple manufacturing process, and can increase the light emitting area compared to the driving circuit portion.

Another embodiment of the present invention provides a light emitting display device that does not require complicated processes and mechanisms such as vacuum deposition, fine metal masks, etc. by fabricating nanowires as well as switching transistors and capacitors. .

Further, another embodiment of the present invention provides a light emitting display device which is not sensitive to moisture or outdoor air, and thus can maintain light emission characteristics even with a thin protective film.

1A is a plan view illustrating a light emitting display device according to an exemplary embodiment of the present invention, FIG. 1B is a plan view illustrating an RGB pixel of FIG. 1A, and FIG. 1C is a cross-sectional view illustrating another RGB pixel.
2 is a circuit diagram illustrating a light emitting display device having a nanowire light emitting transistor according to an exemplary embodiment of the present invention.
3A and 3B are plan and cross-sectional views illustrating a bottom gate nanowire light emitting transistor according to another exemplary embodiment of the present invention, and FIG. 3C is a cross-sectional view illustrating a nanowire bottom gate transistor (switching transistor) according to another embodiment. to be.
4 is a cross-sectional view illustrating a top gate nanowire light emitting transistor according to another embodiment of the present invention.
5 is a cross-sectional view illustrating a top gate nanowire light emitting transistor according to another embodiment of the present invention.
6 is a cross-sectional view showing a nanowire capacitor according to another embodiment of the present invention.
7 is a cross-sectional view showing a capacitor according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

Here, the same reference numerals are attached to parts having similar configurations and operations throughout the specification. In addition, when a part is electrically connected to another part, this includes not only a case in which the part is directly connected, but also a case in which another element is interposed therebetween.

1A is a plan view illustrating a light emitting display device according to an exemplary embodiment of the present invention, FIG. 1B is a plan view illustrating an RGB pixel of FIG. 1A, and FIG. 1C is a cross-sectional view illustrating another RGB pixel.

As shown in FIG. 1A, the light emitting display device 10 according to an exemplary embodiment of the present invention includes a display area 11, a non-display area 12, a drive driver 13, and an external connector 14. . N_M pixels 15 are formed in the display area 11, and each pixel 15 is composed of three RGB pixels. Here, the emission color of the RGB pixel is determined by the constituent material of the nanowires.

As shown in FIG. 1B, the pixel 15 according to the exemplary embodiment of the present invention may include a nanowire light emitting transistor 15a, a circuit, and a wiring part 15b. Naturally, the nanowire light emitting transistor 15a is a portion that emits any color of red, blue, and green, and the circuit and the wiring part 15b are transistors for driving and controlling the nanowire light emitting transistor 15a. , The capacitor and the wiring are formed.

As illustrated in FIG. 1C, the RGB pixel 150 according to another exemplary embodiment of the present invention may include a nanowire light emitting transistor 150a, a circuit, and a wiring unit 150b that emit white light. In this case, for displaying each RGB, an RGB color filter 17 may be positioned above or below the nanowire light emitting transistor 150a emitting white light. Therefore, although the nanowire light emitting transistor 150a emits white light, the RGB color filter 17 is disposed above or below the display device, and thus the display device employing the same can display color. In the figure, reference numeral 16 is a substrate.

2 is a circuit diagram illustrating a light emitting display device having a nanowire light emitting transistor according to an exemplary embodiment of the present invention.

As illustrated in FIG. 2, the light emitting display device 20 according to an exemplary embodiment of the present invention may include a first power line Vdd, a nano wire light emitting transistor LED T1, a second power line Vss, and a capacitor. C), switching transistor T2, data line Vdata and scan line Sn.

The first power supply line Vdd supplies a voltage of approximately 5V, for example. Here, the nanowire light emitting transistor (LED T1) is driven at a lower current than the conventional AMOLED, so that the power supplied to the first power line (Vdd) is about 5V is sufficient. However, this does not limit the present invention. That is, a voltage higher or lower than the voltage may be supplied to the nanowire light emitting transistor LED T1 by the first power line Vdd.

The nano wire light emitting transistor LED T1 is electrically connected to the first power line Vdd. The nano wire light emitting transistor LED T1 includes a first electrode, a second electrode, and a gate electrode. The first electrode (source or drain) of the nano wire light emitting transistor LED T1 is electrically connected to the first power line Vdd. The second electrode (drain or source) of the nano wire light emitting transistor LED T1 is electrically connected to the second power line Vss. The gate electrode of the nano wire light emitting transistor LED T1 is electrically connected to the capacitor C and the switching transistor T2. On the other hand, such a nano-wire light emitting transistor (LED T1) includes a nanowire having a semiconductor function and a light emitting function at the same time. That is, the nanowire light emitting transistor LED T1 is turned on, for example, in the state where Vgs> Vth, and at this time, a predetermined color is emitted. The detailed structure of such a nano wire light emitting transistor (LED T1) will be described again below.

The second power line Vss provides a voltage lower than that of the first power line Vdd. For example, the second power line Vss may provide a ground voltage. However, this does not limit the present invention. That is, a voltage higher or lower than the ground voltage may be supplied to the nanowire light emitting transistor LED T1 by the second power line Vss.

The capacitor C is electrically connected to the nanowire light emitting transistor LED T1, the switching transistor T2, and the second power line Vss. The capacitor C has a first electrode and a second electrode. The first electrode of the capacitor C is electrically connected to the gate electrode of the nanowire light emitting transistor LED T1 and the switching transistor T2. The second electrode of the capacitor C is electrically connected to the second power line Vss and the second electrode of the nanowire light emitting transistor LED T1. On the other hand, such a capacitor (C) may also be formed including nanowires. Various structures of this capacitor C are also described again below.

The switching transistor T2 is electrically connected to the nanowire light emitting transistor LED T1, the capacitor C, the data line Vdata, and the scan line Sn. The switching transistor T2 includes a first electrode, a second electrode, and a gate electrode. The first electrode of the switching transistor T2 is electrically connected to the gate electrode of the nanowire light emitting transistor LED T1 and the first electrode of the capacitor C. The second electrode of the switching transistor T2 is electrically connected to the data line Vdata. The gate electrode of the switching transistor T2 is electrically connected to the scan line Sn. Meanwhile, the switching transistor T2 may also be formed including nanowires. The switching transistor T2 is substantially the same as the nanowire light emitting transistor LED T1. The first electrode and the second electrode of the switching transistor T2 have the same work function, but the first electrode and the second electrode of the nanowire light emitting transistor LED T1 have a different work function.

The data line Vdata supplies a data signal. Data by this data line Vdata is stored in the capacitor C through the switching transistor T2.

The scan line Sn supplies a scan signal. The switching transistor T2 is turned on by the scan signal by the scan line Sn. In addition, when the switching transistor T2 is turned on in this manner, data through the data line Vdata is stored in the capacitor C. FIG.

Although the light emitting display circuit 20 including two transistors and one capacitor 2TR 1CAP has been described as an example, all light emitting display circuits known or heretofore known may be used to improve the performance of the light emitting display device. Of course.

3A and 3B are plan and cross-sectional views illustrating a bottom gate nanowire light emitting transistor according to another exemplary embodiment of the present invention, and FIG. 3C is a cross-sectional view illustrating a nanowire bottom gate transistor (switching transistor) according to another embodiment. to be.

3A and 3B, the bottom gate nanowire light emitting transistor 510 according to another exemplary embodiment of the present invention may include a gate electrode 511 and a gate electrode formed on the buffer layer 502 of the substrate 501. The gate insulating film 512 covering the 511, the nano wire 513 formed on the gate insulating film 512 corresponding to the gate electrode 511, and the first electrode 514 connected to one end of the nano wire 513. ), And a second electrode 515 connected to the other end of the nanowire 513.

The substrate 501 may be formed of any one selected from a ceramic substrate, a silicon wafer substrate, a glass substrate, a polymer substrate, and an equivalent thereof. In particular, when used in a bidirectional light emitting display device, the substrate 501 may be made of a glass substrate or a transparent plastic. The glass substrate may be made of silicon oxide. In addition, the polymer substrate may be formed of a polymer material such as polyethylene terephthalate (PET), polyerylene naphthalate (PEN), and polyimide.

The gate electrode 511 is formed in the buffer layer 502 of the substrate 501. The gate electrode 511 may be formed of an opaque reflective metal when the emission direction of the display device is directed upward. For example, the gate electrode 511 may be aluminum (Al), tin (Sn), tungsten (W), gold (Au), chromium (Cr), molybdenum (Mo), palladium (Pd), or platinum (Pt). , Nickel (Ni), titanium (Ti) and the equivalent may be formed of any one opaque reflective metal selected from. In addition, the gate electrode 511 may be formed of a transparent conductive oxide when the display device emits light in both directions. For example, the gate electrode 511 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide (SnO 2), or indium oxide (In 2 O 3). ) And any equivalent thereof may be formed of a transparent conductive oxide.

The gate insulating layer 512 covers the gate electrode 511 and an outer peripheral buffer layer 502. The gate insulating film 512 may be any one selected from a common oxide film, a nitride film, and an equivalent thereof.

The nano wire 513 is formed on the gate insulating layer 512 corresponding to the gate electrode 511. The nanowires 513 have a light emitting function and a semiconductor function at the same time.

A plurality of nanowires 513 are provided to form a thin film having a predetermined thickness on the gate insulating layer 512. Of course, the nano wire 513 is electrically connected to the first electrode 514 and the second electrode 515 to be described later. In addition, the nanowires 513 may be arranged in a direction parallel to or perpendicular to a length direction of the first electrode 514 (or the second electrode). That is, the nanowire 513 is formed to cross from one end of the first electrode 514 (or the second electrode) to the other end in the longitudinal direction of the first electrode 514 (or the second electrode), or It may be formed in a direction from the plane of the first electrode 514 (or the second electrode) to the outside.

The nanowire 513 is formed in a wire shape having a length greater than the diameter, the diameter is approximately 1nm ~ 300nm, the length is approximately 2nm ~ 500㎛. As the diameter of the nanowire 513 is smaller, the thickness of the thin film of the nanowire 513 becomes more uniform. On the other hand, when the diameter of the nanowires 513 is greater than approximately 300 nm, the thin film thickness of the nanowires 513 is partially thickened, and the flatness of the nanowires 513 is reduced.

Meanwhile, the nanowires 513 are formed of an inorganic light emitting material. Various inorganic phosphors may be used as the inorganic light emitting material.

For example, the inorganic light emitting material is a red phosphor, CaS: Eu, ZnS: Sm, ZnS: Mn, Y2O2S: Eu, Y2O2S: Eu, Bi, Gd2O3: Eu, (Sr, Ca, Ba, Mg) P2O7: Eu , Mn, CaLa 2 S 4: Ce; Phosphors such as SrY 2 S 4: Eu, (Ca, Sr) S: Eu, SrS: Eu, Y 2 O 3: Eu, YVO 4: Eu, Bi, mixtures thereof or compounds thereof may be used.

In addition, the inorganic light emitting material is a green phosphor, ZnS: Tb (Host: dopant), ZnS: Ce, Cl, ZnS: Cu, Al, Gd2O2S: Tb, Gd2O3: Tb, Zn, Y2O3: Tb, Zn, SrGa2S4: Eu , Y2SiO5: Tb, Y2Si2O7: Tb, Y2O2S: Tb, ZnO: Ag, ZnO: Cu, Ga, CdS: Mn, BaMgAl10O17: Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2S4: Eu, Ca8Mg (SiO4) 4Cl2: Eu, Mn, YBO3: Ce, Tb, Ba2SiO4: Eu, (Ba, Sr) 2SiO4: Eu, Ba2 (Mg, Zn) Si2O7: Eu, (Ba, Sr) Al2O4: Eu, Sr2Si3O8.2SrCl2 Each of: Eu, a mixture of the same or a compound thereof can be used.

In addition, the inorganic light emitting material is a blue phosphor SrS: Ce, ZnS: Tm, ZnS: Ag, Cl, ZnS: Te, Zn2SiO4: Mn, YSiO5: Ce, (Sr, Mg, Ca) 10 (PO4) 6Cl2: Eu Phosphors such as BaMgAl10O17: Eu, BaMg2Al16O27: Eu, mixtures thereof or compounds thereof may be used.

In addition, as the inorganic light emitting material, a white phosphor such as YAG (Yittrium, Alumium, Garnet) may be used. In addition, the inorganic light emitting material may be a mixture or compound inorganic light emitting material using CaxSrx-1Al2O3: Eu + 2 synthesized with CaAl2O3 and SrAl2O3. In addition, white light may be realized by mixing ZnO + SnO with the inorganic light emitting material.

That is, the inorganic light emitting material is formed including a host forming a mother and a dopant serving as a center of light emission in the mother. In addition, such an inorganic light emitting material is formed including a semiconductor active layer and a semiconductor channel region in a transistor.

In addition, Si, Ge, Sn, Se, Te, B, C (including diamonds), P, BC, BP (BP6), B-Si, Si-C, Si-Ge, Si-Sn, and Ge-Sn, SiC, BN / BP / BAs, AlN / AlP / AlAs / AlSb, GaN / GaP / GaAs / GaSb, InN / InP / InAs / InSb, BN / BP / BAs, AlN / AlP / AlAs / AlSb, GaN / GaP / GaAs / GaSb, InN / InP / InAs / InSb, ZnO / ZnS / ZnSe / ZnTe, CdS / CdSe / CdTe, HgS / HgSe / HgTe, BeS / BeSe / BeTe / MgS / MgSe, GeS, GeSe, GeTe, SnS SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, AgF, AgCl, AgBr, AgI, BeSiN2, CaCN2, ZnGeP2, CdSnAs2, ZnSnSb2, CuGeP3, CuSi2P3, Si3N3O3 The same material can be used for semiconductor nanowires.

In particular, nanowires made of a material such as a mixture or compound of ZnO, In2O3, SnO2, SiGe, GaN, InP, InAs, Ge, GaP, GaAs, GaAs / P, InAs / P, ZnS, ZnSe, CdS, CdSe, respectively Basically has a semiconductor function, and also has a light emitting function by adding a separate dopant. Of course, by adjusting the composition of the dopant, it is possible to appropriately adjust the emission color. In addition, a material mainly used as a dopant may be Ce, Tm, Ag, Cl, Te, Mn, Eu, Bi, Tb, Cu, Zn, Ga, each of the compounds, or mixtures thereof. It is not limited.

Meanwhile, a planarization layer (not shown) may be further formed on the gap between the nanowires 513 and an upper portion thereof. The planarization layer may be formed of a dielectric layer or an electrically conductive layer according to the electrical properties of the nanowires 513 used. When the nanowires 513 are electrically conductive, charges are not accumulated on the surface of the nanowires so that the planarization layer may be formed of a dielectric layer or an insulating layer. In addition, when the nanowires 513 are not electrically conductive, charges may accumulate on the surface during low voltage excitation, so that the planarization layer may be formed as an electrically conductive layer to prevent this. The planarization layer fills the gaps between the nanowires 513 so that the nanowires 513 are generally flat. The planarization layer may be formed of a dielectric or polymer resin or oxide.

The first electrode 514 is formed of a thin film and may be used as a source electrode (or a drain electrode). In addition, the first electrode 514 is electrically connected to the nanowire 513 by simultaneously covering one end of the nanowire 513, the inner peripheral surface and the outer peripheral edge of the one end. The first electrode 514 is made of aluminum (Al), tin (Sn), tungsten (W), gold (Au), chromium (Cr), molybdenum (Mo), palladium (Pd), platinum (Pt), and nickel ( Ni), titanium (Ti), and equivalents thereof. In addition, the first electrode 514 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide (SnO 2), and indium oxide (In 2 O 3). And it may be formed of any one of the transparent conductive oxide selected from the equivalent.

The second electrode 515 is also formed of a thin film having a predetermined thickness and formed as a pole opposite to the first electrode 514. That is, when the first electrode 514 is a source electrode, the second electrode 515 may be used as a drain electrode (or source electrode). The second electrode 515 is electrically connected to the nanowires 513. That is, the second electrode 515 is electrically connected to the nanowire 513 by simultaneously covering the other end of the nanowire 513, the inner peripheral surface and the outer peripheral edge of the other end. In addition, the second electrode 515 may include aluminum (Al), tin (Sn), tungsten (W), gold (Au), chromium (Cr), molybdenum (Mo), palladium (Pd), platinum (Pt), It may be formed of any one metal layer selected from nickel (Ni), titanium (Ti) and equivalents thereof. In addition, the second electrode 515 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide (SnO 2), and indium oxide (In 2 O 3). And it may be formed of any one of the transparent conductive oxide selected from the equivalent.

On the other hand, if there is no difference in work function between the first electrode 514 and the second electrode 515, the nanowire 513 is difficult to emit light. For example, the first electrode 514 may have a relatively high work function of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, and tin oxide (SnO2). ), Indium oxide (In 2 O 3) and its equivalents. These materials have a work function of approximately 4.9 eV, which is relatively large.

In this case, the second electrode 515 may be formed of any one selected from aluminum and its equivalent having a low work function. Such materials have a work function of approximately 4.1 eV, with a relatively small work function.

Further, a material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide (SnO 2), indium oxide (In 2 O 3), or the like may be used as the first electrode. When used simultaneously as the 514 and the second electrode 515, magnesium or aluminum is formed in advance before the formation of either electrode so that a work function difference occurs between the first electrode 514 and the second electrode 515. It may be formed by deposition.

In addition, the first electrode 514 and the second electrode 515 are formed on the same plane, and are spaced apart from each other in the horizontal direction, thereby implementing a horizontal nanowire light emitting transistor (LED T1). In addition, such a horizontal nanowire light emitting transistor (LED T1) is basically a bi-directional light emitting structure in the upper and lower directions, the lower gate electrode 511 is formed of an opaque reflective metal layer, or a separate opaque upper By further forming the reflective metal layer, the light emission direction can be adjusted in only one direction.

As illustrated in FIG. 3C, a separate light shielding member 516 may be further formed on or under the bottom gate transistor 510a (switching transistor) according to another embodiment of the present invention. As described above, when the first electrode 514 and the second electrode 515 having a work function difference are used, the nanowires 513 may emit light. However, the light shielding member 516 may prevent the light emitted from the nanowires 513 from emitting outside of the display device. Also in the following description of the switching transistor, such a light shielding member may exist basically. Of course, in such a switching transistor, if the first electrode and the second electrode having the same work function are used, such light emission can be basically suppressed.

4 is a cross-sectional view illustrating a top gate nanowire light emitting transistor according to another embodiment of the present invention.

As shown in FIG. 4, the top gate nanowire light emitting transistor 610 according to another exemplary embodiment of the present invention includes a nanowire 611 and a nanowire 611 formed on a buffer layer 602 of a substrate 601. A gate insulating film 612 covering the gate insulating film 612, a gate electrode 613 formed on the gate insulating film 612 corresponding to the nanowire 611, the gate electrode 613, and the outer peripheral gate insulating film 612. The first electrode 615 connected to one end of the nanowire 611 through the interlayer insulating film 614, the interlayer insulating film 614, and the other end of the nanowire 611 through the interlayer insulating film 614. It includes a second electrode 616 connected.

Here, the nanowires 611 may be made of the same material as the above-described material having a light emitting function and a semiconductor function, and the first electrode 615 and the second electrode 616 may also be the same material as the above-described material. have. Of course, the first electrode 614 and the second electrode 615 may be formed of materials having different work functions so that the nanowires 611 may have a light emitting function and a semiconductor function.

5 is a cross-sectional view illustrating a top gate nanowire light emitting transistor according to another embodiment of the present invention.

As shown in FIG. 5, the top gate nanowire light emitting transistor 710 according to another embodiment of the present invention may include a nanowire 711 and a nanowire 711 formed on a buffer layer 702 of a substrate 701. A first electrode 712 connected to one end of the second electrode, a second electrode 712 connected to the other end of the nanowire 711, the nanowire 711, the first electrode 712, and the second electrode 712. A gate insulating film 714 covering the gate insulating film 714 and a gate electrode 715 formed on the gate insulating film 714 corresponding to the nanowire 711.

Here, the nanowire 711 is the same material as the above-described material having a light emitting function and a semiconductor function at the same time, the first electrode 712 and the second electrode 713 may also be the same material as the above-described material. have. Of course, the first electrode 712 and the second electrode 713 are formed of a material having a different work function so that the nanowire 711 has a light emitting function and a semiconductor function.

On the other hand, the switching transistor T2 is substantially the same as the structure of the nanowire light emitting transistors 510, 610, and 710 as described above. That is, the first electrode and the second electrode are formed of the same material (that is, the first electrode and the second electrode are formed of the same work function) so that the nanowires of the switching transistor T2 do not emit light. Except for the above, the same structure as the nanowire light emitting transistors 510, 610, and 710 is performed.

For example, in the switching transistor T2, the first electrode and the second electrode may include aluminum (Al), tin (Sn), tungsten (W), gold (Au), chromium (Cr), molybdenum (Mo), and palladium ( Pd), platinum (Pt), nickel (Ni), titanium (Ti) and its equivalent may be formed of any one metal selected from. In addition, the first electrode and the second electrode may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide, tin oxide (SnO 2), and indium oxide (In 2 O 3). ) And any equivalent thereof may be formed of a transparent conductive oxide.

As described above, the first electrode and the second electrode are formed of a material having the same work function so that the nanowires electrically connected between the first electrode and the second electrode do not emit light. For example, when the first electrode is aluminum, the second electrode is also made of aluminum. In addition, when the first electrode is indium tin oxide, the second electrode is also formed of indium tin oxide.

Of course, the switching transistor T2 may have the same structure as the nanowire light emitting transistors 510, 610, and 710. That is, a first electrode and a second electrode having different work functions may be used. Therefore, at this time, the switching transistor T2 also emits a predetermined color like the nanowire light emitting transistors 510, 610, and 710. In addition, an additional shielding member may be further formed above or below the switching transistor T2 to prevent light from the switching transistor T2 from dissipating to the outside (see FIG. 3C).

6 is a cross-sectional view illustrating a capacitor according to another embodiment of the present invention.

As shown in FIG. 6, a capacitor 810 according to another embodiment of the present invention may include a nanowire 811 and a nanowire 811 formed on a substrate 801 having a recess 803 having a predetermined depth. The insulating layer 812 includes a first electrode 813 surrounding the insulating layer 812, and a second electrode 814 connected to the nanowire 811 exposed through the insulating layer 812. Here, since the nanowires 811 are electrically connected to the second electrode 814, the nanowires 811 opposite to the first electrodes 811 form one capacitor.

Here, the nanowires 811 may be the same material as the above-described material. In addition, the first electrode 813 and the second electrode 814 may also be the same material as the above-described material. However, since the work function of the first electrode 813 and the second electrode 814 is formed of the same material, the nanowires 811 do not emit light. In the figure, reference numeral 802 denotes a buffer layer. Of course, since the capacitor is basically not a current element, even if there is a work function difference between the first electrode 813 and the second electrode 814, light emission does not occur. The following is all the same.

7 is a cross-sectional view showing a capacitor according to another embodiment of the present invention.

As shown in FIG. 7, the capacitor 910 according to another embodiment of the present invention includes a nanowire 911 formed on a substrate 901 and a first electrode 912 electrically connected to the nanowire 911. And an insulating layer 913 covering the nanowire 911 and a second electrode 914 formed on the insulating layer 913 corresponding to the nanowire 911. In this case, the nanowire 911 is also electrically connected to the first electrode 912, so that the nanowire 911 opposite to the second electrode 914 forms one capacitor.

Here, the nano wire 911 may be the same material as the above-described material. In addition, the first electrode 912 and the second electrode 914 may also be the same material as the above-described material. However, since the work function of the first electrode 912 and the second electrode 914 is formed of the same material, the nanowires 911 do not emit light. In the figure, reference numeral 902 denotes a buffer layer.

What has been described above is only one embodiment for implementing a light emitting display device having a nanowire light emitting transistor according to the present invention, and the present invention is not limited to the above-described embodiment, and is claimed in the following claims. As described above, any person having ordinary knowledge in the field of the present invention without departing from the gist of the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.

510; Light emitting device according to an embodiment of the present invention
501; Substrate 502; Buffer layer
511; Gate electrode 512; Gate insulating film
513; Nanowires 514; First electrode
515; Second electrode

Claims (18)

A nanowire light emitting transistor electrically connected between the first power line and the second power line, the nanowire light emitting transistor having a semiconductor function and a light emitting function simultaneously;
A capacitor electrically connected between the nanowire light emitting transistor, the second power line, and the data line; And,
And a switching transistor electrically connected between the nanowire light emitting transistor, the data line, the capacitor, and the scan line. The method of claim 1,
The nano wire light emitting transistor
A gate electrode;
A gate insulating film covering the gate electrode;
A nanowire formed on the gate insulating layer corresponding to the gate electrode;
A first electrode connected to one end of the nanowire; And,
A second electrode connected to the other end of the nanowire,
The light emitting display device of claim 1, wherein the first electrode and the second electrode have different work functions. The method of claim 1,
The nano wire light emitting transistor
Nanowires;
A gate insulating film covering the nanowires;
A gate electrode formed on the gate insulating layer corresponding to the nanowires;
An interlayer insulating film covering the gate electrode and a gate insulating film formed around the gate electrode;
A first electrode connected to one end of the nanowire through the interlayer insulating film; And,
A second electrode connected to the other end of the nanowire through the interlayer insulating film;
The light emitting display device of claim 1, wherein the first electrode and the second electrode have different work functions. The method of claim 1,
The nano wire light emitting transistor
Nanowires;
A first electrode connected to one end of the nanowire;
A second electrode connected to the other end of the nanowire;
A gate insulating layer covering the nanowires, the first electrode, and the second electrode; And,
A gate electrode formed on the gate insulating film corresponding to the nanowires;
The light emitting display device of claim 1, wherein the first electrode and the second electrode have different work functions. The method of claim 1,
The switching transistor
A gate electrode;
A gate insulating film covering the gate electrode;
A nanowire formed on the gate insulating layer corresponding to the gate electrode;
A first electrode connected to one end of the nanowire; And,
And a second electrode connected to the other end of the nanowire. The method of claim 1,
The switching transistor
Nanowires;
A gate insulating film covering the nanowires;
A gate electrode formed on the gate insulating layer corresponding to the nanowires;
An interlayer insulating film covering the gate electrode and a gate insulating film formed around the gate electrode;
A first electrode connected to one end of the nanowire through the interlayer insulating film; And,
And a second electrode connected to the other end of the nanowire through the interlayer insulating layer. The method of claim 1,
The switching transistor
Nanowires;
A first electrode connected to one end of the nanowire;
A second electrode connected to the other end of the nanowire;
A gate insulating layer covering the nanowires, the first electrode, and the second electrode; And,
And a gate electrode formed on the gate insulating layer corresponding to the nanowires. The method of claim 1,
The capacitor is
Nanowires formed on the substrate;
An insulation layer surrounding the nanowires;
A first electrode surrounding the insulating layer; And,
And a second electrode connected to the nanowire exposed through the insulating layer. The method of claim 8,
And a groove is formed in the substrate corresponding to the insulating layer. The method of claim 1,
The capacitor is
Nanowires;
A first electrode connected to the nanowires;
An insulation layer covering the nanowires; And,
And a second electrode formed on the insulating layer corresponding to the nanowires. The method according to any one of claims 2 to 4,
The gate electrode is a transparent conductive oxide or an opaque metal. The method according to any one of claims 2 to 10,
The nano wire
CaS: Eu, ZnS: Sm, ZnS: Mn, Y2O2S: Eu, Y2O2S: Eu, Bi, Gd2O3: Eu, (Sr, Ca, Ba, Mg) P2O7: Eu, Mn, CaLa2S4: Ce, SrY2S4: Eu, ( Ca, Sr) S: Eu, SrS: Eu, Y2O3: Eu, YVO4: Eu, Bi,
ZnS: Tb, ZnS: Ce, Cl, ZnS: Cu, Al, Gd2O2S: Tb, Gd2O3: Tb, Zn, Y2O3: Tb, Zn, SrGa2S4: Eu, Y2SiO5: Tb, Y2Si2O7: Tb, Y2O2O: Tb, Z2 Ag, ZnO: Cu, Ga, CdS: Mn, BaMgAl10O17: Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2S4: Eu, Ca8Mg (SiO4) 4Cl2: Eu, Mn, YBO3: Ce, Tb, Ba2SiO4: Eu, (Ba, Sr) 2SiO4: Eu, Ba2 (Mg, Zn) Si2O7: Eu, (Ba, Sr) Al2O4: Eu, Sr2Si3O8,2SrCl2: Eu,
SrS: Ce, ZnS: Tm, ZnS: Ag, Cl, ZnS: Te, Zn2SiO4: Mn, YSiO5: Ce, (Sr, Mg, Ca) 10 (PO4) 6Cl2: Eu, BaMgAl10O17: Eu, BaMg2Al16O27: Eu,
YAG (Yittrium, Alumium, Garnet) or a mixture or compound using CaxSrx-1Al2O3: Eu + 2 synthesized with CaAl2O3 and SrAl2O3, or
ZnO, In2O3, SnO2, SiGe, GaN, InP, InAs, Ge, GaP, GaAs, GaAs / P, InAs / P, ZnS, ZnSe, CdS, CdSe, any one or a mixture or compound thereof A light emitting display device, characterized in that formed. The method according to any one of claims 2 to 10,
The nano wire
ZnO, In2O3, SnO2, SiGe, GaN, InP, InAs, Ge, GaP, GaAs, GaAs / P, InAs / P, ZnS, ZnSe, CdS, CdSe, any one or a mixture or compound thereof A light emitting display device, characterized in that formed. The method of claim 12,
The nano wire
A light emitting display device further comprising a dopant, which is any one selected from the group consisting of Ce, Tm, Ag, Cl, Te, Mn, Eu, Bi, Tb, Cu, Zn, Ga, or a mixture or compound thereof. The method of claim 13,
The nano wire
A light emitting display device further comprising a dopant, which is any one selected from the group consisting of Ce, Tm, Ag, Cl, Te, Mn, Eu, Bi, Tb, Cu, Zn, Ga, or a mixture or compound thereof. The method according to any one of claims 5 to 7,
The first and second electrodes have the same work function. The method according to any one of claims 5 to 7,
And a light shielding member further formed above or below the switching transistor. The method according to any one of claims 2 to 4,
And a color filter further formed on or under the nanowire light emitting transistor.

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