KR101161409B1 - Nitride semiconductor light emitting device and fabrication method thereof - Google Patents

Abstract

The present invention relates to a nitride-based semiconductor light emitting device and a method for manufacturing the same, an aspect of the present invention, a light emitting structure comprising an n-type and p-type nitride semiconductor layer and an active layer disposed therebetween, the n-type nitride semiconductor layer A p-type nitride semiconductor layer including a p-type contact layer, and a p-type cladding layer disposed between the p-type contact layer and the active layer; The shape of the distortion layer is filled in the region between the p-type contact layer and the active layer provides a semiconductor light emitting device, characterized in that the lower surface of the p-type contact layer has a flat shape.

Description

Nitride-based semiconductor light emitting device and its manufacturing method {NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride semiconductor light emitting device, and more particularly, to a nitride semiconductor light emitting device and a method of manufacturing the same to improve electrostatic discharge (ESD) resistance (breakdown voltage characteristics) of a GaN based nitride light emitting device.

GaN-based light emitting devices are generally known to have poor electrostatic properties compared to other compound light emitting devices. This is because a GaN light emitting device is formed on a sapphire substrate having a large lattice mismatch, and thus many crystal defects are formed in the GaN thin film due to a large lattice mismatch (16%) between the substrate and the grown thin film.

These crystal defects increase the leakage current of the device and when the external static electricity enters, the active layer of the light emitting device having many crystal defects is destroyed by the strong field. In general, it is known that crystal defects (penetration defects) of about 10 ¹⁰ to 10 ¹² / cm ² exist in GaN thin films.

The electrostatic breakdown characteristics of the light emitting device are very important in relation to the application range of the GaN light emitting device. In particular, the design of the device to withstand the static electricity generated from the package equipment and the operator of the light emitting device is a very important variable to improve the yield of the final device.

In particular, since the GaN-based light emitting device has been applied to a condition that is poor in outdoor signage and automotive lighting environment in recent years, electrostatic properties are considered more important.

In general, ESD of conventional GaN light emitting devices can withstand up to thousands of volts in the forward direction under human body mode (HBM), but it is difficult to withstand hundreds of volts in the reverse direction. The reason for this is that as mentioned earlier, the crystal defect of the device is the main reason, and the electrode design of the device is also very important. In particular, GaN light emitting device adopts sapphire substrate, which is a non-conductor, so that N-electrode and P-electrode are formed on the same surface, and current gathering around N-electrode becomes more severe during actual device operation. Makes it bad

In order to improve the ESD characteristics, the conventional methods are approached from the outside of the device. U.S. Patent No. 6,593,597 discloses a technique for protecting a light emitting device from ESD by integrating an LED device and a Schottky diode on the same substrate and connecting the LED and the Schottky diode in parallel. In addition, in order to improve ESD resistance, a method of connecting an LED in parallel with a Zener diode has been proposed. However, these methods are not preferable in terms of cost and yield since they incur the trouble of purchasing and assembling a separate zener diode or performing a Schottky junction, and increase the manufacturing cost of the device.

The most preferable method is to improve the ESD characteristics of the light emitting device itself by improving the thin film characteristics or the structure of the light emitting device. Japanese Patent 3622562 discloses a method for improving ESD characteristics by using a multilayer thin film structure using undoped indium gallium nitride and undoped gallium nitride on an n-side contact layer. -237254, U. S. Patent No. 6677619, attempts to reduce leakage current and improve ESD resistance by making a layer structure having good crystallinity by reducing the density and size of defects that may occur in each layer of the light emitting device.

As such, it is desirable to increase the quality of the GaN thin film fundamentally to improve the ESD characteristics, but there are limitations to eliminate defects. Until now, studies on the growth method of the thin film to improve the ESD characteristics of the GaN device have been continued. .

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to reduce the leakage current by using the crystal defect (penetration defect), which has been the cause of the conventional leakage current, in reverse. The present invention provides a nitride semiconductor light emitting device and a method of manufacturing the same, which can improve the ESD effect by changing the present factor.

In order to achieve the above object, the present invention, a substrate; A light emitting structure comprising a n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate, the light emitting structure having a threading dislocation passing through the n-type nitride semiconductor layer, the active layer, or the p-type nitride semiconductor layer; And it provides a nitride semiconductor light emitting device comprising a V-shaped distortion structure layer formed on the basis of the through potential.

The substrate may be selected from any one of sapphire, spinel (MgA1204), SiC, Si, ZnO, GaAs, GaN substrate.

A buffer layer may be further included between the substrate and the n-type semiconductor layer, and the buffer layer is preferably selected from one of a nitride semiconductor system and a carbide system.

The n-type nitride semiconductor layer includes an n-type GaN-based semiconductor layer and an n-type superlattice layer.

In this case, the n-type superlattice layer may be formed of an AlGaN / GaN / InGaN-based multilayer structure, and further comprises an n-type electrode on the n-type GaN-based semiconductor layer. The V-shaped distortion structure layer is preferably formed on the surface of the n-type GaN-based semiconductor layer.

The active layer may have at least one quantum well structure, and the quantum well structure may be formed of InGaN / GaN.

The p-type nitride semiconductor layer includes a p-type superlattice layer and a p-type GaN-based semiconductor layer, and the p-type superlattice layer may be formed of an AlGaN / GaN / InGaN-based multilayer structure.

In addition, the p-type nitride semiconductor layer further comprises a transparent electrode and a bonding electrode.

The V-shaped distorting structure layer may have a flat growth surface ((0001) surface) that is the same as the substrate surface and a growth surface ((1-101) surface, (11-22) surface, or other inclined surface inclined with respect to the substrate surface). Crystal face) is preferably present together. The flat growth plane refers to a plane parallel to the substrate plane, and the inclined growth plane refers to a slope of any one surface of the crystal plane grown thereon with respect to the substrate plane (0 ° to 90 °). To say.

In addition, the present invention, a substrate; An n-type semiconductor layer formed on the substrate; An active layer formed on the n-type semiconductor layer; A p-type semiconductor layer formed on the active layer; A transparent electrode formed on the p-type semiconductor layer; An n-type electrode formed on the exposed n-type semiconductor layer; And a bonding electrode formed on the transparent electrode, wherein a penetrating potential penetrating the n-type semiconductor layer, an active layer, or a p-type semiconductor layer is formed, and a V-shaped distortion structure layer is formed based on the penetrating potential. Provided is a nitride semiconductor light emitting device.

The V-shaped distortion structure layer is formed from the n-type semiconductor layer and has a flat growth surface and an inclined growth surface. Further, as the active layer and the p-type semiconductor layer become more gradually in shape (curve form, distortion form), the surface of the p-type semiconductor layer forms a flat surface.

A buffer layer may be further included between the substrate and the n-type semiconductor layer.

The n-type superlattice layer may further include an n-type superlattice layer between the n-type semiconductor layer and the active layer, wherein the n-type superlattice layer is composed of AlxInyGazN (0 ≦ x, y, z ≦ 1). It is preferable to have a repeating structure of more than a layer.

The active layer has at least one quantum well structure made of Al x In y Ga z N (0 ≦ x, y, z ≦ 1).

And further comprising a p-type superlattice layer between the active layer and the p-type semiconductor layer, wherein the p-type superlattice layer is formed of AlxInyGazN (0 ≦ x, y, z ≦ 1) having three or more different layers. It is preferable to have a repeating structure.

In addition, the present invention, in the nitride semiconductor light emitting device comprising a light emitting structure consisting of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer, a through potential penetrating through the light emitting structure is formed, around the through potential A nitride semiconductor light emitting device having a V-shaped distortion structure is provided.

The V-shaped distortion structure has a flat growth surface and an inclined growth surface.

The n-type nitride semiconductor layer may include an undoped GaN layer; an n-type GaN contact layer; an n-type GaN layer on the n-type GaN contact layer; And an n-type superlattice layer on the n-type GaN layer.

The p-type nitride semiconductor layer, a p-type superlattice layer; A p-type GaN layer on the p-type superlattice layer; And a p-type GaN contact layer on the p-type GaN layer.

An n-type electrode formed on the n-type GaN contact layer; And a p-type electrode formed on the p-type GaN contact layer.

The V-shaped distortion structure may be formed on at least one of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer.

In addition, the present invention comprises the steps of preparing a substrate; Forming an n-type semiconductor layer having a V-shaped distortion structure on the substrate; Forming an active layer on the n-type semiconductor layer; And forming a p-type semiconductor layer on the active layer. It provides a method for manufacturing a nitride semiconductor light emitting device comprising a.

The forming of the n-type semiconductor layer having the V-shaped distortion structure may include forming a buffer layer on the substrate; Forming an n-type GaN contact layer on the buffer layer; Forming an n-type GaN layer having a V-type distortion structure on the n-type GaN contact layer; And forming an n-type superlattice layer on the n-type GaN layer.

The forming of the buffer layer may be formed of any one of a nitride semiconductor material or a carbide-based material. When forming the nitride semiconductor buffer layer, the buffer layer may be formed at a growth temperature of 200 to 900 ° C. When forming the buffer layer, it is made at a growth temperature of 500 ~ 1500 ℃.

The step of forming the n-type GaN layer having the V-type distortion structure is performed at a growth temperature of 700 ° C to 950 ° C in an atmosphere of nitrogen as a carrier gas.

Alternatively, the forming of the n-type GaN layer having the V-shaped distortion structure may include forming an n-type GaN layer; And forming a V-type defect on the surface of the n-type GaN layer through chemical etching.

The forming of the n-type superlattice layer on the n-type GaN layer may include forming a repeating structure of three or more layers having different compositions of AlxInyGazN (0 ≦ x, y, z ≦ 1).

The forming of the active layer may include forming at least one quantum well structure by alternately stacking AlxInyGazN / AlxInyGazN (0 ≦ x, y, z ≦ 1).

The forming of the p-type semiconductor layer may include forming a p-type superlattice layer; Forming a p-type GaN layer on the p-type superlattice layer; And forming a p + type GaN layer on the p type GaN layer.

Forming the p-type superlattice layer includes forming a repeating structure of three or more layers having different compositions of Al x In y Ga z N (0 ≦ x, y, z ≦ 1).

Forming a transparent electrode on the p-type semiconductor layer; Exposing the n-type semiconductor layer; And forming a p-type electrode and an n-type electrode on the p-type semiconductor layer and the exposed n-type semiconductor layer.

The nitride semiconductor light emitting device of the present invention having the above-described structure forms a V-shaped distortion structure around the through potential generated due to lattice mismatch, and increases the resistance of this region, thereby preventing leakage current due to the through potential. To improve the ESD effect.

That is, a threading dislocation is generated by lattice mismatch between the sapphire substrate and the GaN semiconductor formed on the upper part of the sapphire substrate, and when the static electricity is applied, current is concentrated to cause leakage current. Therefore, in the past, various studies have been conducted to reduce breakage caused by ESD by reducing the penetration potential causing leakage current.

However, in the present invention, the through potential is used in the reverse direction, thereby reducing leakage current and preventing damage to the light emitting device due to ESD. That is, in the present invention, by forming a V-shaped distortion structure layer arbitrarily around the through-potential to increase the resistance of the region in which the through-potential exists, blocking the current concentrated in the region, the resistance of ESD We want to improve In this case, the V-shaped distortion structure layer may be formed through a growth temperature or chemical etching.

As described above, the nitride semiconductor light emitting device according to the present invention forms a V-shaped distortion structure layer around the through potential generated by lattice mismatch, thereby preventing the device from being destroyed by the application of static electricity, thereby improving the characteristics and lifetime of the device. There is an effect that can be further improved.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device (LED) according to the present invention.
2a to 2c are cross-sectional views showing a V-shaped distortion structure according to the present invention.
3 is a perspective view showing V-shaped defects formed on the surface of an n-type GaN layer.
4A to 4C are process flowcharts illustrating a method of manufacturing a nitride semiconductor light emitting device according to the present invention.
5a and 5b are micrographs showing the V-shaped distortion structure on the n-type GaN layer obtained by controlling the growth temperature.

Hereinafter, the nitride semiconductor light emitting device of the present invention and a method of manufacturing the same will be described in more detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a nitride semiconductor light emitting device according to the present invention.

As shown in the figure, the nitride semiconductor light emitting device 100 according to the present invention, the substrate 110; A buffer layer 111 on the substrate 110; A light emitting structure sequentially stacked on the buffer layer 111 and composed of n-type nitride semiconductor layers 113 and 115, an active layer 120, and p-type nitride semiconductor layers 135 and 133; And a through defect penetrating at least a portion of the light emitting structure, and the V-shaped distortion structure layer 160 based on the through defect. In this case, an undoped GaN layer 112 may be further included between the buffer layer 211 and the n-type nitride semiconductor layer 113.

Partial regions of the p-type nitride semiconductor layers 133 and 135 and the active layer 120 are removed by a mesa etching process to expose a portion of the upper surface of the n-type nitride semiconductor layer 113 and expose the n-type. The n-type electrode 117 is formed on the nitride semiconductor layer 113.

In addition, a transparent electrode 140 made of indium tin oxide (ITO) or the like is formed on the p-type nitride semiconductor layer 133, and a bonding electrode 137 is formed thereon.

The substrate 110 is a substrate suitable for growing a nitride semiconductor single crystal, and is preferably formed using a transparent material including sapphire. In addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN), gallium asenide (GaAs), silicon, silicon carbide (SiC) and aluminum nitride ( AlN) or the like.

The buffer layer 111 is a layer for improving lattice matching with the substrate 110 including the sapphire before the n-type nitride semiconductor layer 113 is grown on the substrate 110. GaN, InGaN, AlN, InN, AlInGaN, SiC, or ZnO may be formed of at least one material, which may be omitted depending on the type and growth method of the substrate 110.

The n-type nitride semiconductor layer 113 includes an n-type GaN contact layer 113a doped with n-type impurities such as Si, Ge, Sn, and the like, and a V-shaped distortion on the n-type GaN contact layer 113a. And an n-type GaN layer 113b having a shape structure 160 and an n-type super lattice layer 115.

The n-type superlattice layer 115 has a structure in which at least three layers of Al x In y Ga z N (0 ≦ x, y, z ≦ 1) are repeatedly stacked, and preferably, an AlGaN layer, a GaN layer, or an InGaN layer. It may have a three-layer repeating structure, at least one of the AlGaN layer, GaN layer, InGaN layer is 20nm or less in thickness.

The n-type GaN layer or the n-type superlattice layer may be formed as a multilayer film layer in which the n-type impurity concentration, the thickness of each layer, or the components of each layer are changed. For example, the doping concentration of the GaN component may be changed to form multiple layers, or two or more layers having different GaN, InGaN, or AlGaN components may be stacked or repeated layers having different impurity concentrations, or different thicknesses. The layer may be repeated or the n-side multilayer film layer may be formed. The n-side multilayer layer may be positioned between the n-type contact layer and the active layer.

On the other hand, the V-shaped distortion structure layer 160 is formed around the penetrating potential 150 penetrating the light emitting structure, thereby preventing the current from being concentrated in the penetrating potential 150.

2 and 3 show a V-shaped distortion structure 160, FIG. 2 is a sectional view, and FIG. 3 is a perspective view.

As shown in the figure, the V-shaped distortion structure 160 has a surface shape in which a general growth surface (0001) and an inclined growth surface (1-101) exist together, and the inclined growth surface ( 1-101 is a regular hexagonal shape from above and V-shaped in cross section.

And, as mentioned above, the position where the V-shaped distortion structure is formed is selectively generated where the through dislocation 150 is formed, and the through dislocation 150 may end in the V-shaped distortion layer. (See FIG. 2B, FIG. 2C).

The V-shaped distortion structure 160 has a gentle V-shaped valley shape toward the active layer 120 and the p-type nitride semiconductor layer 133 from the thickness direction of each layer, that is, the n-type GaN layer 113b. After passing through the p-type GaN layer 133b and near the p-type GaN contact layer 133a, the V-shaped valley gradually becomes flat to form a uniform layer structure (see FIG. 2).

At this time, when the n-type superlattice layer 115 and the active layer 120 is formed, the reason why the V- shape is maintained is that the growth temperature is 900 ° C or less, and when the p-type GaN layer 133b is formed. The reason why the V-shape is filled is because the growth temperature is over 1000 ° C.

As described above, the present invention controls the V-shaped distortion structure by controlling the growth temperature of the semiconductor layer, and the method of manufacturing the nitride semiconductor light emitting device according to the present invention will be described in more detail later.

As described above, the p-type nitride semiconductor layer 133 formed in the presence of the inclined growth surface has a semi-insulator characteristic of low conductivity at a portion having the V-shaped distortion structure 160. The p-type GaN layer is formed has an effect that the current is blocked.

As such, the current blocking characteristic of the portion having the V-shaped distorting structure blocks the current concentrated through the defect (penetration potential) when static electricity is applied, thereby significantly improving the ESD resistance of the device. In particular, in the present invention, the ESD breakdown voltage is increased to 6 kV or more on a reverse basis.

The evaluation of ESD immunity is more important than the absolute breakdown voltage, and the survival rate at a certain voltage (number of products after ESD / number of products before application × 100) is more important. By applying the structure, 60% of the ESD survival rate in the existing structure was greatly improved to 95%.

In general, for light emitting devices having horizontal and vertical sizes of several hundred micrometers or more, the number of V-shaped distortions is one or more, and the same or less than the distribution of the penetrating potential 150 is generated. For example, 5 × 10 ⁸ / cm ² 5 potentials 5 × 10 ⁸ / cm ² The following V-shaped distortions are present, and V-shaped distortions are generated at all potentials so that the potentials and V-shaped distortions have the same distribution and number, and in the structure of the present invention, V at almost all potentials is ideal. Shape distortion is formed.

1, the structure of the nitride semiconductor light emitting device 100 according to the present invention will be described. The active layer 120 formed on the n-type superlattice layer 115 is formed of AlxInyGazN (0 ≦ x, y, It can be composed of a multi-quantum well structure consisting of z≤1), for example, a multi-quantum well structure having an InGaN-based quantum well layer and a GaN-based quantum barrier layer alternately stacked structure Can be formed.

In this case, the active layer 120 may control the wavelength or the quantum efficiency by adjusting the height of the quantum barrier layer or the thickness, composition, and number of quantum well layers.

On the other hand, the active layer 120 may be composed of a single quantum well layer or a double-hetero (double-hetero) structure.

The p-type nitride semiconductor layer 133 is a semiconductor layer doped with p-type impurities such as Mg, Zn, and Be, and includes a p-type super lattice layer 135 and a p-type (Al) GaN layer ( 133b) and a p-type (In) GaN contact layer 133a.

The p-type superlattice layer 135 has a structure in which at least three layers of Al x In y Ga z N (0 ≦ x, y, z ≦ 1) are repeatedly stacked, and typically, an AlGaN layer having a thickness of at least one layer of 20 nm or less. The repeating structure of three layers which consists of a GaN layer and an InGaN layer is mentioned.

The p-type (Al) GaN layer or the p-type superlattice layer may be formed of a multilayer film layer in which the p-type impurity concentration, the thickness of each layer, or the components of each layer are changed. For example, the doping concentration of the GaN component may be changed to form multiple layers, or two or more layers having different GaN, InGaN, or AlGaN components may be stacked, or layers having different impurity concentrations may be repeated, or have different thicknesses. The layer can be repeated or the p-side multilayer film layer can be formed. The p-side multilayer layer may be positioned between the p-type contact layer and the active layer.

In particular, the thickness of the p-type GaN layer 133b affects the forward ESD characteristics. In the present invention, a p-type GaN-based material layer (p-type superlattice layer, p-type GaN layer, p-type GaN contact layer) on the active layer ) To a thickness of 250 nm or more, so that the forward ESD value is higher than 6 kV.

In the nitride semiconductor light emitting device 100 of the present invention configured as described above, the V-shaped distortion is formed around the penetrating potential penetrating the light emitting structure, thereby increasing the resistance of the portion, when static electricity is applied. Improves ESD immunity by blocking current concentrated through faults (through-potential). That is, the conventional through-potential causes leakage current and causes damage to the device due to concentration of current when static electricity is applied. However, in the present invention, the through-potential reversely utilizes the through-potential, and thus, through the V-distortion structure, Increasing the resistance improves ESD levels above 6kV on the reverse reference.

Hereinafter, a method of manufacturing the nitride semiconductor light emitting device of the present invention configured as described above will be described with reference to the drawings.

4A to 4C are flowcharts illustrating a method of manufacturing a nitride semiconductor light emitting device according to the present invention.

First, as shown in FIG. 4A, a substrate 210 is prepared, and then a buffer layer 211 is formed on the substrate 210.

As mentioned above, the substrate 210 is a substrate suitable for growing a nitride semiconductor single crystal, and is preferably formed using a transparent material including sapphire. In addition to sapphire, zinc oxide (ZnO), gallium nitride (GaN), gallium acenide (GaAs), silicon, silicon carbide (SiC) and aluminum nitride ( AlN) or the like. It may also be used to form one or more irregularities on the surface of the substrate. Concave-convex shape can use various shapes such as circle, triangle, square, pentagon, hexagon, octagon, etc., and also emit light using various shapes of substrate surface such as circle (elliptical), triangle, and square The luminance of the device can be improved and crystal defects can be reduced.

The buffer layer 211 is a layer for improving lattice matching with the substrate 110 including the sapphire before the n-type nitride semiconductor layer is grown, and is generally nitride semiconductor (GaN, AlN, etc.) or carbide. It may be formed of a system (SiC, etc.) material.

When a nitride semiconductor material is used as a buffer, its formation temperature (growth temperature) is 200 ° C to 900 ° C. When a carbide material is used as a buffer, its formation temperature (growth temperature) can be adjusted in the range of 500 ° C to 1500 ° C. Can be. However, the buffer layer 211 may be omitted depending on the type of the substrate 110 and the growth method.

Subsequently, the undoped GaN layer 212 is grown on the buffer layer 211 in a range of 0.01 μm or more and within a few μm without adding n-type impurities, and n, such as Si, Ge, Sn, etc., is grown thereon. An n-type GaN contact layer 213a doped with an impurity is formed.

At this time, the concentration of the n-type impurity is 3 × 10 ¹⁸ / cm ³ The above is preferable, and as the concentration of the n-type impurity increases, it is possible to obtain the effect of reducing the threshold voltage Vf in a range where the crystallinity does not decrease. However, when the concentration of the n-type impurity is excessively 5 × 10 ²¹ / cm ³ , the crystallinity is lowered, so that the crystallinity does not decrease (3 × 10 ¹⁸ / cm ³ It is preferable to determine the concentration of n-type impurity within ˜5 × 10 ²¹ / cm ³ ).

Subsequently, an n-type GaN layer 213b having a V-shaped distortion structure layer 260 is formed on the n-type GaN contact layer 213a. The V-shaped distortion structure layer 260 may be formed by controlling the growth temperature or by chemical etching.

The method of controlling the growth temperature is a method of growing an n-type or undoped GaN at a temperature of 700 to 950 ° C. in an atmosphere using nitrogen as a carrier gas, and a V-shaped distortion structure in the GaN layer 213b. Layer 260 is formed.

5A and 5B are micrographs showing V-shaped distortion structures of the p-type layer-active layer-n-type GaN-based light emitting device structure 213b obtained by controlling the growth temperature, as shown in the photograph. A V-shaped layer structure in which the shape of the surface in which the growth surface 0001 and the inclined upper surface (1-101) exist together can be observed.

In the chemical etching method, the substrate formed up to the n-type GaN layer 213b is removed from the reactor, and chemically etched the surface of the n-type GaN layer 213b using a phosphate solution. , Similar V-shaped layer structure can be made.

In addition, the V-shaped layer structure is generally present in the portion where the through potential is formed, and the through potential may still exist through the semiconductor layer to be formed later, but is often stopped in the middle of the layer (FIG. 5b).

In general, in light emitting devices having a size of several hundred micrometers or more in width and length, the number of V-shaped distortions (defects) is one or more, and the same or less than the distribution of the penetrating potential 150 is generated. For example, 5 × 10 ⁸ / cm ² 5 potentials 5 × 10 ⁸ / cm ² The following V-shaped distortions (defects) are present, and V-shaped distortions are generated at all dislocations, so that it is most ideal that dislocations and V-shaped distortions have the same distribution and number. V-shape distortion was formed at the dislocations.

As described above, after the n-type GaN layer 213b having the V-shaped distortion structure 260 is formed, as shown in FIG. 4B, on the n-type GaN layer 213b, AlxInyGazN (0 The n-type superlattice layer 215 is formed by repeatedly stacking three or more layers having different compositions consisting of? X, y, z? 1.

In addition, AlxInyGazN / AlxInyGazN (0 ≦ x, y, z ≦ 1) is alternately stacked on top of each other to form an active layer 220 having at least one quantum well structure. In this case, the wavelength or the quantum efficiency may be adjusted by adjusting the height of the barrier of the quantum well of the active layer 220, the thickness of the well layer, the composition, and the number of quantum wells.

On the other hand, the growth temperature of the n-type superlattice layer 215 and the active layer 220 is at 900 ℃ or less, which is to maintain the V-shaped distortion structure formed in the n-type GaN layer 213b.

Subsequently, by repeatedly stacking three or more layers having different compositions composed of AlxInyGazN (0 ≦ x, y, z ≦ 1) doped or partially doped with p-type impurities on the active layer 220, The p-type superlattice layer 235 is formed. Typically, AlGaN / GaN / InGaN can be formed sequentially and repeatedly.

P-type impurities include Mg, Zn, or Be, and Mg may be representatively used.

Subsequently, a p-type GaN layer 233b is formed on the p-type superlattice layer 235 and the doping concentration of the p-type impurity is higher than that of the p-type GaN layer 233b, so that the p-type GaN layer 233b is formed. Next, the p-type GaN contact layer 233a is formed on the substrate, and a transparent conductive material such as ITO or IZO is deposited thereon to form the transparent electrode 240.

The thickness of the p-type GaN layer 233b affects the forward ESD characteristics. When the thickness of the p-type GaN-based material layer on the active layer is 250 nm or more, the forward ESD value is higher than 6 kV. .

On the other hand, the p-type superlattice layer 235, the p-type GaN layer 233b and the p-type GaN contact layer 233a is grown at a temperature of 1000 ℃ or more, at the growth temperature, the V-shaped valleys are filled , the surface on the p-type GaN contact layer 233a forms a flat surface.

Subsequently, as shown in FIG. 4C, the transparent electrode 240, the p-type GaN contact layer 233a, the p-type GaN layer 233b, the p-type superlattice layer 235, the active layer 220, and n The GaN layer 213b and the n-type GaN contact layer 213a are mesa-etched to expose a portion of the n-type GaN contact layer 213a.

In addition, an n-type electrode 217 is formed on the exposed n-type GaN contact layer 213a, and a p-type electrode 237 is formed on the transparent electrode 240, thereby forming a nitride semiconductor light emitting device according to the present invention. The device 200 is manufactured.

In manufacturing a light emitting device, the growth substrate is removed, and electrodes are formed on the upper side of the p-type and the lower side of the n-type, respectively.

In addition, at least one uneven structure may be formed on at least one of the p-type or n-type semiconductors or the exposed surface of the light emitting device to improve the light extraction efficiency.

In the present invention, the semiconductor layer may be formed through the MOCVD method, and various other known methods such as the MBE method may be used.

In the nitride semiconductor light emitting device of the present invention manufactured by the method as described above, a V-shaped distortion structure in a portion where at least one of the n-type nitride semiconductor layer, the active layer, and the p-type nitride semiconductor layer has a through potential is located. By artificially forming A, the ESD effect is improved.

The basic concept of the present invention is to prevent the damage of the light emitting device by forming a V-shaped distortion structure around the penetrating potential, thereby preventing the current from concentrating in this region when static electricity is applied. The V-shaped distortion structure may be formed on any layer inside the light emitting structure, provided that the position is the penetration potential.

In addition, in addition to the structure of the light emitting device illustrated in the embodiment of the present invention, a V-shaped distortion structure is formed around the through potential, and thus, any structure known in the art may be included if the leakage current can be prevented. will be.

Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

100, 200: light emitting element 110, 210: substrate
111, 211: buffer layer 112, 212: undoped GaN layer
113a, 213a: n-type GaN contact layer 113b, 213b: n-type GaN layer
115, 215: n-type superlattice layer 120, 220: active layer
135, 235: p-type superlattice layer 133a, 233a: p-type GaN contact layer
133b and 233b p-type GaN layer 140 and 240 transparent electrode
150, 250: penetration potential 160, 260: V-shaped distortion structure
117, 217: n-type electrode 137, 237: p-type electrode

Claims (10)

a light emitting structure comprising n-type and p-type nitride semiconductor layers and an active layer disposed therebetween;
And a V-shaped distortion layer formed on the n-type nitride semiconductor layer, the active layer, and the p-type nitride semiconductor layer based on the n-type nitride semiconductor layer.
The p-type nitride semiconductor layer includes a p-type contact layer and a p-type cladding layer disposed between the p-type contact layer and the active layer,
The V-shaped distortion layer does not extend to the p-type contact layer, so that the surface of the p-type contact layer toward the active layer has a flat shape.
The method of claim 1,
The active layer comprises a V-shaped distortion layer,
A nitride semiconductor light emitting device, characterized in that the surface of the p-type semiconductor layer is flat.
The method of claim 1,
The n-type nitride semiconductor layer,
an n-type GaN-based semiconductor layer; And
n-type superlattice layer or multilayer film layer;
Nitride semiconductor light emitting device comprising a.
The method of claim 3,
The n-type superlattice layer,
A nitride semiconductor light emitting device comprising: a three-layer repeating structure consisting of an AlGaN layer, a GaN layer, and an InGaN layer with a thickness of at least one layer of 20 nm or less.
The method of claim 1,
The p-type nitride semiconductor layer,
p-type superlattice layer or multilayer film layer; And
p-type GaN-based semiconductor layer;
Nitride semiconductor light emitting device comprising a.
The method of claim 5,
The p-type superlattice layer,
A nitride semiconductor light emitting device comprising: a three-layer repeating structure consisting of an AlGaN layer, a GaN layer, and an InGaN layer with a thickness of at least one layer of 20 nm or less.
The method of claim 1,
The V-shaped distortion layer is,
A nitride semiconductor light emitting device comprising a flat surface and an inclined surface together.
The method of claim 1,
The V-shaped distortion structure,
A nitride semiconductor light emitting device comprising a flat surface and an inclined surface together.
Preparing a substrate;
Forming an n-type semiconductor layer having a V-shaped distortion structure on the substrate;
Forming an active layer on the n-type semiconductor layer; And
Forming a p-type semiconductor layer on the active layer;
The p-type nitride semiconductor layer includes a p-type contact layer and a p-type cladding layer disposed between the p-type contact layer and the active layer,
The V-shaped distortion structure is formed in the n-type nitride semiconductor layer, the active layer, and the p-type nitride semiconductor layer based on the n-type nitride semiconductor layer, but does not extend to the p-type contact layer, so that the p-type contact is The surface of the layer facing the active layer has a flat shape manufacturing method of the nitride semiconductor light emitting device.
10. The method of claim 9,
The substrate,
A sapphire, spinel (MgA ₁₂ 0 ₄ ), SiC, Si, ZnO, GaAs, GaN substrate selected from any one of the method of manufacturing a nitride semiconductor light emitting device characterized in that it has at least one uneven structure on the surface.

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