KR101130134B1 - 패드 구조 및 그 제조방법 - Google Patents
패드 구조 및 그 제조방법 Download PDFInfo
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- KR101130134B1 KR101130134B1 KR1020090123062A KR20090123062A KR101130134B1 KR 101130134 B1 KR101130134 B1 KR 101130134B1 KR 1020090123062 A KR1020090123062 A KR 1020090123062A KR 20090123062 A KR20090123062 A KR 20090123062A KR 101130134 B1 KR101130134 B1 KR 101130134B1
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
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- H05K3/247—Finish coating of conductors by using conductive pastes, inks or powders
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Abstract
Description
Claims (16)
- 패드 구조에 있어서,기판 상에 배치된 구리 회로패턴;상기 기판 상에 위치하고, 상기 구리 회로패턴의 일부를 노출하는 솔더 마스크 개구를 제공하는 솔더 마스크층;노출된 상기 구리 회로패턴 상에 적층된 골드층; 및상기 골드층 상에 적층된 나노 도금막을 구비하는 것을 특징으로 하는 패드 구조.
- 제1항에 있어서, 상기 골드층의 하방에 위치한 니켈금속층을 더 포함하는 것을 특징으로 하는 패드 구조.
- 제1항에 있어서, 상기 나노 도금막은 도전막인 것을 특징으로 하는 패드 구조.
- 제1항에 있어서, 상기 나노 도금막은 상기 골드층의 표면 결정입자 간극으로 침투하는 것을 특징으로 하는 패드 구조.
- 제1항에 있어서, 상기 골드층은 화학도금 골드이고, 그 두께는0.15 ㎛ 미만 인 것을 특징으로 하는 패드 구조.
- 제1항에 있어서, 상기 골드층은 전기도금 골드이고, 그 두께는 0.3 ㎛ 미만 인 것을 특징으로 하는 패드 구조.
- 기판을 제공하는 단계;상기 기판 상에 구리 회로패턴을 형성하는 단계;상기 기판 상에 위치하고, 상기 구리 회로패턴의 일부를 노출하는 솔더 마스크 개구를 제공하는 솔더 마스크층을 형성하는 단계;노출된 상기 구리 회로패턴 상에 니켈금속층을 형성하는 단계;상기 니켈금속층 상에 골드층을 형성하는 단계; 및상기 골드층 상에 나노 도금막을 선택적으로 증착하는 단계를 구비하는 것을 특징으로 하는 패드 구조의 제조 방법.
- 제7항에 있어서, 상기 나노 도금막은 화학적 증착법으로 형성된 것임을 특징으로 하는 패드 구조의 제조 방법.
- 제7항에 있어서, 상기 나노 도금막은 도전막인 것을 특징으로 하는 패드 구조의 제조 방법.
- 제7항에 있어서, 상기 골드층은 화학도금 골드이고, 그 두께는 0.15 ㎛ 미만 인 것을 특징으로 하는 패드 구조의 제조 방법.
- 제7항에 있어서, 상기 골드층은 전기도금 골드이고, 그 두께는 0.3 ㎛ 미만 인 것을 특징으로 하는 패드 구조의 제조 방법.
- 기판 상에 배치된 구리 회로패턴;상기 기판 상에 위치하고, 상기 구리 회로패턴의 일부를 노출하는 솔더 마스크 개구를 제공하는 솔더 마스크층;노출된 상기 구리 회로패턴 상에 적층된 실버층; 및상기 실버층 상에 적층된 나노 도금막을 구비하는 것을 특징으로 하는 패드 구조.
- 제12항에 있어서, 상기 나노 도금막은 도전막인 것을 특징으로 하는 패드 구조.
- 제12항에 있어서, 상기 기판은 발광 다이오드(LED) 실장 기판인 것을 특징으로 하는 패드 구조.
- 제12항에 있어서, 상기 나노 도금막은 폴리피롤, 폴리파라페닐린, 폴리티오펜, 폴리아닐린, 나노 탄소, 나노 금속, 나노 도전성 플라스틱을 포함하는 것을 특징으로 하는 패드 구조.
- 제12항에 있어서, 상기 실버층의 두께는 2 ㎛ 미만 인 것을 특징으로 하는 패드 구조.
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TW098137910A TWI391037B (zh) | 2009-11-09 | 2009-11-09 | 接墊結構及其製法 |
TW098137910 | 2009-11-09 |
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KR101130134B1 true KR101130134B1 (ko) | 2012-03-28 |
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US (1) | US8102063B2 (ko) |
JP (1) | JP2011100958A (ko) |
KR (1) | KR101130134B1 (ko) |
TW (1) | TWI391037B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2535929A1 (en) * | 2011-06-14 | 2012-12-19 | Atotech Deutschland GmbH | Wire bondable surface for microelectronic devices |
KR101274674B1 (ko) * | 2011-11-02 | 2013-06-17 | 에스케이하이이엔지 주식회사 | 자외선 또는 극초단파를 이용한 반도체 디바이스 접합 장치 및 그 방법 |
TWI474449B (zh) | 2013-09-27 | 2015-02-21 | Subtron Technology Co Ltd | 封裝載板及其製作方法 |
TWI474450B (zh) * | 2013-09-27 | 2015-02-21 | Subtron Technology Co Ltd | 封裝載板及其製作方法 |
DE102013225794A1 (de) * | 2013-12-12 | 2015-06-18 | Leoni Kabel Holding Gmbh | Kontaktanbindung von geschirmten Datenleitungen an einer Platine sowie Verfahren zur Kontaktierung mehrerer geschirmter Datenleitungen an einer Platine |
TWI673784B (zh) * | 2018-11-28 | 2019-10-01 | 同泰電子科技股份有限公司 | 在發光二極體載板形成開窗的方法 |
CN110062523A (zh) * | 2019-04-04 | 2019-07-26 | 广州兴森快捷电路科技有限公司 | 金手指及其制作方法、电路板及其制作方法 |
TWI699905B (zh) * | 2019-04-26 | 2020-07-21 | 諾沛半導體有限公司 | 在發光二極體載板上形成焊墊的方法 |
CN111901963B (zh) * | 2019-05-05 | 2022-01-04 | 诺沛半导体有限公司 | 在发光二极管载板上形成焊垫的方法 |
CN113411978A (zh) * | 2021-07-06 | 2021-09-17 | 全成信电子(深圳)股份有限公司 | 一种化金板化学镍金层在铜pad上的附着力测试方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200411245Y1 (ko) | 2005-12-29 | 2006-03-10 | 킹팍 테크놀로지 인코포레이티드 | 이미지 센서 모듈 패키지 |
KR20060089635A (ko) * | 2005-02-04 | 2006-08-09 | 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 | 구리 배선층의 형성방법 |
US7393771B2 (en) * | 2004-06-29 | 2008-07-01 | Hitachi, Ltd. | Method for mounting an electronic part on a substrate using a liquid containing metal particles |
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---|---|---|---|---|
KR20080021703A (ko) * | 2005-06-29 | 2008-03-07 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 조립체를 제조하는 방법 및 그 조립체 |
JP2008153470A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
US8314500B2 (en) * | 2006-12-28 | 2012-11-20 | Ultratech, Inc. | Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers |
US7888259B2 (en) * | 2008-08-19 | 2011-02-15 | Ati Technologies Ulc | Integrated circuit package employing predetermined three-dimensional solder pad surface and method for making same |
US8051560B2 (en) * | 2009-10-16 | 2011-11-08 | Unimicron Technology Corp. | Method of fabricating a solder pad structure |
-
2009
- 2009-11-09 TW TW098137910A patent/TWI391037B/zh active
- 2009-12-11 KR KR1020090123062A patent/KR101130134B1/ko not_active Expired - Fee Related
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2010
- 2010-01-11 US US12/684,969 patent/US8102063B2/en not_active Expired - Fee Related
- 2010-02-08 JP JP2010025415A patent/JP2011100958A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7393771B2 (en) * | 2004-06-29 | 2008-07-01 | Hitachi, Ltd. | Method for mounting an electronic part on a substrate using a liquid containing metal particles |
KR20060089635A (ko) * | 2005-02-04 | 2006-08-09 | 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 | 구리 배선층의 형성방법 |
KR200411245Y1 (ko) | 2005-12-29 | 2006-03-10 | 킹팍 테크놀로지 인코포레이티드 | 이미지 센서 모듈 패키지 |
Also Published As
Publication number | Publication date |
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US8102063B2 (en) | 2012-01-24 |
TW201117681A (en) | 2011-05-16 |
KR20110051118A (ko) | 2011-05-17 |
TWI391037B (zh) | 2013-03-21 |
JP2011100958A (ja) | 2011-05-19 |
US20110108876A1 (en) | 2011-05-12 |
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