KR101114256B1 - 패턴 제조 방법 - Google Patents
패턴 제조 방법 Download PDFInfo
- Publication number
- KR101114256B1 KR101114256B1 KR1020100068120A KR20100068120A KR101114256B1 KR 101114256 B1 KR101114256 B1 KR 101114256B1 KR 1020100068120 A KR1020100068120 A KR 1020100068120A KR 20100068120 A KR20100068120 A KR 20100068120A KR 101114256 B1 KR101114256 B1 KR 101114256B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- organic compound
- metal organic
- ink layer
- compound ink
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 112
- 239000007787 solid Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 229910052709 silver Inorganic materials 0.000 claims abstract description 22
- 239000004332 silver Substances 0.000 claims abstract description 22
- 239000011368 organic material Substances 0.000 claims abstract description 20
- -1 silver ions Chemical class 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 30
- 238000004140 cleaning Methods 0.000 claims description 17
- 238000005507 spraying Methods 0.000 claims description 8
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000000976 ink Substances 0.000 description 180
- 239000002105 nanoparticle Substances 0.000 description 29
- 238000000059 patterning Methods 0.000 description 22
- 239000007788 liquid Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 13
- 239000003960 organic solvent Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 230000001678 irradiating effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 150000002894 organic compounds Chemical class 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical group CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2683—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using X-ray lasers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Manufacturing Of Electric Cables (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
도 2는 패턴을 제조하는 일련의 과정을 도시한 도면.
도 3은 마랑고니 플로우의 영향에 의해 패턴의 가장자리가 두껍고, 패턴의 중심부위가 얇게 형성된 상태를 나타낸 도면.
도 4는 나노 파티클 잉크를 레이저 패터닝한 패턴의 단면도.
도 5는 마랑고니 플로우를 설명하는 도면.
도 6은 하이드로다이나믹 플로우의 영향에 의해 패턴의 두께가 균일하게 형성된 상태를 나타낸 도면.
도 7은 하이드로다이나믹 플로우를 설명하는 도면.
21 : 패턴 23 : 고체 금속 입자
30 : 세척액
Claims (5)
- 기판 상에 은 이온이 유기물과 이온결합되어 투명한 상태를 유지하고 있는 금속 유기 화합물 잉크층을 박막으로 형성하는 제1 단계;
상기 기판을 가열하는 것에 의하여, 상기 은 이온을 환원시켜 상기 금속 유기 화합물 잉크층을 반고상 상태로 경화시키고, 또한 상기 금속 유기 화합물 잉크층에서 상기 유기물을 증발시키는 제2 단계;
상기 유기물이 증발되어 상기 금속 유기 화합물 잉크층의 두께가 상기 제1 단계에서 형성된 때보다 얇아진 상태에서, 상기 반고상 상태의 금속 유기 화합물 잉크층에 레이저 광을 조사하여, 조사된 부위가 고상상태로 경화되어 패턴이 형성되는 제3 단계; 및
상기 반고상 상태의 금속 유기 화합물 잉크층을 제거하여 상기 패턴만을 남기는 제4 단계
를 포함하는 패턴 제조 방법. - 제1 항에 있어서,
상기 제2 단계는 가열 램프로 상기 금속 유기 화합물 잉크층이 형성된 기판을 가열하여 상기 금속 유기 화합물 잉크층을 반고상 상태로 경화시키는,
패턴 제조 방법. - 제1 항에 있어서,
상기 제2 단계는 열판 또는 컨벡션 오븐으로 상기 금속 유기 화합물 잉크층이 형성된 기판을 가열하여 상기 금속 유기 화합물 잉크층을 반고상 상태로 경화시키는,
패턴 제조 방법. - 제 1 항에 있어서,
상기 제4 단계는 상기 기판을 세척액에 담그거나 초음파세척을 하거나 세척액을 분사하여 상기 반고상 상태의 금속 유기 화합물 잉크층을 제거하는 단계
를 더 포함하는 패턴 제조 방법. - 제4 항에 있어서,
상기 제4 단계는 상기 패턴이 형성된 기판을 가열하는 단계를 더 포함하는,
패턴 제조 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100068120A KR101114256B1 (ko) | 2010-07-14 | 2010-07-14 | 패턴 제조 방법 |
EP11172936A EP2408283A1 (en) | 2010-07-14 | 2011-07-06 | Method of fabricating pattern |
US13/180,921 US20120015112A1 (en) | 2010-07-14 | 2011-07-12 | Method of fabricating pattern |
JP2011156147A JP2012023380A (ja) | 2010-07-14 | 2011-07-14 | パターンの製造方法 |
CN201110196959.3A CN102338983B (zh) | 2010-07-14 | 2011-07-14 | 图案制造方法 |
JP2014129895A JP2014170973A (ja) | 2010-07-14 | 2014-06-25 | パターンの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100068120A KR101114256B1 (ko) | 2010-07-14 | 2010-07-14 | 패턴 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120007381A KR20120007381A (ko) | 2012-01-20 |
KR101114256B1 true KR101114256B1 (ko) | 2012-03-05 |
Family
ID=44786598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100068120A KR101114256B1 (ko) | 2010-07-14 | 2010-07-14 | 패턴 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120015112A1 (ko) |
EP (1) | EP2408283A1 (ko) |
JP (2) | JP2012023380A (ko) |
KR (1) | KR101114256B1 (ko) |
CN (1) | CN102338983B (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4992975B2 (ja) * | 2008-06-16 | 2012-08-08 | 東レ株式会社 | パターニング方法およびこれを用いたデバイスの製造方法ならびにデバイス |
KR20130106676A (ko) * | 2012-03-20 | 2013-09-30 | 한국과학기술원 | 미세금속전극 제조방법 |
KR101394968B1 (ko) * | 2012-10-12 | 2014-05-15 | 한국과학기술원 | 금속패턴 형성방법 |
US10315275B2 (en) * | 2013-01-24 | 2019-06-11 | Wisconsin Alumni Research Foundation | Reducing surface asperities |
US10622244B2 (en) | 2013-02-18 | 2020-04-14 | Orbotech Ltd. | Pulsed-mode direct-write laser metallization |
JP2016516211A (ja) * | 2013-02-18 | 2016-06-02 | オルボテック リミテッド | ツーステップの直接描画レーザ・メタライゼーション |
CN104185378A (zh) * | 2013-05-21 | 2014-12-03 | 群创光电股份有限公司 | 导电线路的制备方法、以及具有导电线路的装置 |
US10537027B2 (en) | 2013-08-02 | 2020-01-14 | Orbotech Ltd. | Method producing a conductive path on a substrate |
US20150123851A1 (en) * | 2013-11-01 | 2015-05-07 | Tyco Electronics Corporation | Three-Dimensional Article Having Spray-Applied Ink |
EP3140853A4 (en) * | 2014-04-10 | 2018-01-17 | Orbotech Ltd. | Pulsed-mode direct-write laser metallization |
US10193004B2 (en) | 2014-10-19 | 2019-01-29 | Orbotech Ltd. | LIFT printing of conductive traces onto a semiconductor substrate |
US11086797B2 (en) * | 2014-10-31 | 2021-08-10 | Hewlett Packard Enterprise Development Lp | Systems and methods for restricting write access to non-volatile memory |
WO2016075793A1 (ja) * | 2014-11-13 | 2016-05-19 | エス・オー・シー株式会社 | チップヒューズの製造方法及びチップヒューズ |
EP3247816A4 (en) | 2015-01-19 | 2018-01-24 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
GB2541412B (en) | 2015-08-18 | 2018-08-01 | M Solv Ltd | Method and Apparatus for Forming a Conductive Track |
KR102546450B1 (ko) | 2015-11-22 | 2023-06-21 | 오르보테크 엘티디. | 프린팅된 3-차원 구조들의 표면 특성들의 제어 |
KR101813531B1 (ko) * | 2016-07-04 | 2018-01-02 | 주식회사 비에스피 | 투명전극과 이것의 제조방법 |
JP2018085437A (ja) * | 2016-11-24 | 2018-05-31 | 株式会社村田製作所 | 電子部品の製造方法及び電子部品 |
US10811334B2 (en) * | 2016-11-26 | 2020-10-20 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure in interconnect region |
US10529641B2 (en) * | 2016-11-26 | 2020-01-07 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure over interconnect region |
US20180165032A1 (en) * | 2016-12-14 | 2018-06-14 | Western Digital Technologies, Inc. | Read write performance for nand flash for archival application |
TW201901887A (zh) | 2017-05-24 | 2019-01-01 | 以色列商奧寶科技股份有限公司 | 於未事先圖樣化基板上電器互連電路元件 |
KR102089581B1 (ko) * | 2017-10-31 | 2020-03-16 | 금오공과대학교 산학협력단 | 고분해능의 대면적 미세 패턴 제조 방법 및 그 방법으로 제조된 평판 디스플레이 |
KR102253704B1 (ko) * | 2017-10-31 | 2021-05-18 | 금오공과대학교 산학협력단 | 고분해능의 대면적 미세 패턴 제조 방법 및 그 방법으로 제조된 평판 디스플레이 |
CN108681694A (zh) * | 2018-04-19 | 2018-10-19 | 蚌埠华特科技有限公司 | 一种指纹模组盖板logo的制备工艺 |
CN109649063A (zh) * | 2018-11-07 | 2019-04-19 | 维达力实业(深圳)有限公司 | 电子产品及其保护盖板和保护盖板的制作方法 |
KR102125148B1 (ko) * | 2018-12-05 | 2020-06-19 | 한양대학교 에리카산학협력단 | 음각 방식의 패턴 제조 방법 및 그 제조 방법으로 제조된 금속 나노 코팅층 |
CN109683229B (zh) * | 2019-01-24 | 2021-04-02 | 凤阳硅谷智能有限公司 | 一种玻璃导光板的制备方法 |
CN109733084A (zh) * | 2019-02-25 | 2019-05-10 | 深圳市天虹激光技术有限公司 | 一种新型的镭射纳米金油墨烘干方法 |
KR102181868B1 (ko) * | 2020-06-24 | 2020-11-23 | 국민대학교산학협력단 | 와이어의 표면에 미세 패턴을 형성하는 방법 |
WO2022038936A1 (ja) * | 2020-08-18 | 2022-02-24 | 国立大学法人静岡大学 | 透明電極を製造する方法および透明電極 |
KR102674846B1 (ko) * | 2021-11-09 | 2024-06-14 | 주식회사 코윈디에스티 | 레이저빔을 이용한 재배선(rdl) 공정 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03155004A (ja) * | 1989-11-10 | 1991-07-03 | Matsushita Electric Ind Co Ltd | 銀パターン形成組成物及び形成法 |
JPH1020488A (ja) * | 1996-07-04 | 1998-01-23 | Mitsubishi Materials Corp | Pb非含有金属酸化物薄膜パターンの形成方法 |
JPH11119431A (ja) * | 1997-10-08 | 1999-04-30 | Kobe Steel Ltd | 金属パターンの形成方法 |
JPH11307914A (ja) * | 1998-04-21 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 厚膜配線基板のパターン形成方法 |
IE980461A1 (en) * | 1998-06-15 | 2000-05-03 | Univ Cork | Method for selective activation and metallisation of materials |
TWI233763B (en) * | 1999-12-17 | 2005-06-01 | Matsushita Electric Ind Co Ltd | Method of manufacturing a circuit board |
JP4857508B2 (ja) * | 2001-09-21 | 2012-01-18 | 株式会社村田製作所 | 金属酸化物膜形成用塗布液 |
CN1248556C (zh) * | 2002-08-05 | 2006-03-29 | 佳能株式会社 | 电极和布线材料吸收用底层图形形成材料及其应用 |
US7682970B2 (en) * | 2003-07-16 | 2010-03-23 | The Regents Of The University Of California | Maskless nanofabrication of electronic components |
US7071121B2 (en) * | 2003-10-28 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Patterned ceramic films and method for producing the same |
US20060003262A1 (en) * | 2004-06-30 | 2006-01-05 | Eastman Kodak Company | Forming electrical conductors on a substrate |
US7569331B2 (en) * | 2005-06-01 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Conductive patterning |
TWI312799B (en) * | 2005-12-30 | 2009-08-01 | Ind Tech Res Inst | Viscosity controllable highly conductive ink composition and method for fabricating a metal conductive pattern |
KR100823718B1 (ko) * | 2006-04-13 | 2008-04-21 | 주식회사 엘지화학 | 전자파 차폐층 제조시 무전해도금에 대한 촉매 전구체수지조성물, 이를 이용한 금속패턴 형성방법 및 이에 따라제조된 금속패턴 |
US20080085962A1 (en) * | 2006-10-06 | 2008-04-10 | General Electric Company | Composition and associated method |
JP2009004669A (ja) * | 2007-06-25 | 2009-01-08 | Panasonic Corp | 金属配線基板の製造方法およびそれを用いて形成した金属配線基板 |
GB0800081D0 (en) * | 2008-01-04 | 2008-02-13 | Univ Gent | Silver nanoparticles with specific surface area and/or isoelectric point and a method for producing them |
US8747599B2 (en) * | 2008-05-29 | 2014-06-10 | Chidella Krishna Sastry | Process for making self-patterning substrates and the product thereof |
JP2010080474A (ja) * | 2008-09-24 | 2010-04-08 | Konica Minolta Holdings Inc | プリント配線板作製用フィルム、プリント配線板作製方法、及びプリント配線板 |
-
2010
- 2010-07-14 KR KR1020100068120A patent/KR101114256B1/ko active IP Right Grant
-
2011
- 2011-07-06 EP EP11172936A patent/EP2408283A1/en not_active Withdrawn
- 2011-07-12 US US13/180,921 patent/US20120015112A1/en not_active Abandoned
- 2011-07-14 JP JP2011156147A patent/JP2012023380A/ja active Pending
- 2011-07-14 CN CN201110196959.3A patent/CN102338983B/zh not_active Expired - Fee Related
-
2014
- 2014-06-25 JP JP2014129895A patent/JP2014170973A/ja active Pending
Non-Patent Citations (1)
Title |
---|
Proc. 59th Electronic Components and Technology Conference (ECTC 2009), pp. 1579-1584 (2009) |
Also Published As
Publication number | Publication date |
---|---|
JP2014170973A (ja) | 2014-09-18 |
KR20120007381A (ko) | 2012-01-20 |
CN102338983A (zh) | 2012-02-01 |
US20120015112A1 (en) | 2012-01-19 |
JP2012023380A (ja) | 2012-02-02 |
EP2408283A1 (en) | 2012-01-18 |
CN102338983B (zh) | 2014-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101114256B1 (ko) | 패턴 제조 방법 | |
JP2014170973A5 (ko) | ||
JP5341966B2 (ja) | パターン転写方法及びパターン転写装置、これを適用したフレキシブルディスプレイパネル、フレキシブル太陽電池、電子本、薄膜トランジスター、電磁波遮蔽シート、フレキシブル印刷回路基板 | |
US10688692B2 (en) | Control of surface properties of printed three-dimensional structures | |
US20110209749A1 (en) | Pattern transfer method and apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, and flexible printed circuit board applying thereof | |
KR101247619B1 (ko) | 금속 나노입자 극미세 레이저 소결 장치 및 방법 | |
CN105951049B (zh) | 一种具有纳米级间隙的金属颗粒制造方法 | |
TWI661752B (zh) | 用於製造脈衝模式之直接寫入雷射金屬化之方法及系統 | |
CN102593047A (zh) | 基于油溶性纳米颗粒墨水的导电薄膜图案层制备方法 | |
JP2009016724A (ja) | 配線形成方法および配線形成装置 | |
CN104781017B (zh) | 形成在基材上的构造体、构造体的制造方法和线图案 | |
KR20120042022A (ko) | 패턴 제조 방법 및 패턴 전사 장치, 이를 적용한 플렉서블 디스플레이 패널, 플렉서블 태양전지, 전자책, 박막 트랜지스터, 전자파 차폐시트, 플렉서블 인쇄회로기판 | |
KR102253704B1 (ko) | 고분해능의 대면적 미세 패턴 제조 방법 및 그 방법으로 제조된 평판 디스플레이 | |
Liang et al. | Femtosecond Laser Patterning Wettability‐Assisted PDMS for Fabrication of Flexible Silver Nanowires Electrodes | |
JP2018053345A (ja) | メタルマスクの製造方法 | |
US20170178946A1 (en) | Pulsed-mode direct-write laser metallization | |
KR101076685B1 (ko) | 미세 전도성 패턴의 제조방법 | |
KR20130106676A (ko) | 미세금속전극 제조방법 | |
Siddharth et al. | Eco‐Friendly and Particle‐Free Copper Ionic Aqueous Precursor for In Situ Low Temperature Photothermal Synthesizing and Patterning of Highly Conductive Copper Microstructures on Flexible Substrate | |
CN110225666A (zh) | 导电线路的制作方法 | |
KR101568838B1 (ko) | 저 반사 및 지문방지 특성을 갖는 유리의 제조방법 | |
CN112517922A (zh) | 一种高重频超快激光高效直写制造金属微结构的方法 | |
KR102089581B1 (ko) | 고분해능의 대면적 미세 패턴 제조 방법 및 그 방법으로 제조된 평판 디스플레이 | |
Watanabe | Present status and future outlook of selective metallization for electronics industry by laser irradiation to metal nanoparticles | |
KR101073863B1 (ko) | 인쇄 전자 장치 및 그의 인쇄 전자 소자 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20100714 |
|
PA0201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20110825 Patent event code: PE09021S01D |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20120131 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20120202 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20120203 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20160128 Year of fee payment: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20160128 Start annual number: 5 End annual number: 7 |
|
FPAY | Annual fee payment |
Payment date: 20190201 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20190201 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20200203 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20200203 Start annual number: 9 End annual number: 9 |
|
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20211113 |