KR101110365B1 - 압전 세라믹스 제조방법 - Google Patents
압전 세라믹스 제조방법 Download PDFInfo
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- KR101110365B1 KR101110365B1 KR1020100035195A KR20100035195A KR101110365B1 KR 101110365 B1 KR101110365 B1 KR 101110365B1 KR 1020100035195 A KR1020100035195 A KR 1020100035195A KR 20100035195 A KR20100035195 A KR 20100035195A KR 101110365 B1 KR101110365 B1 KR 101110365B1
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- 239000000919 ceramic Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 243
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 24
- 238000002156 mixing Methods 0.000 claims description 12
- 238000005303 weighing Methods 0.000 claims description 12
- 238000003801 milling Methods 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 238000010298 pulverizing process Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 57
- 238000000498 ball milling Methods 0.000 description 51
- 239000002245 particle Substances 0.000 description 26
- 229910052697 platinum Inorganic materials 0.000 description 23
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 20
- 238000001354 calcination Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 239000012071 phase Substances 0.000 description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- -1 sintering aid Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
도 2는 실시예 1에 따라 제조된 xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 압전 분말을 1050℃에서 소결한 후의 X-선 회절 패턴이다.
도 3 내지 도 8은 상기 실시예 1에 따라 제조된 xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 소결체의 표면을 보여주는 주사전자현미경(SEM) 사진이다.
조성 | 밀도(g/㎤) | 유전율 | Kp | Qm | d33(pC/N) |
0.2AgNbO3-0.8(Li0.00(K0.5Na0.5)1.00)NbO3 | 4.54117 | 483.9556 | 0.3328 | 111.2287 | 107 |
0.2AgNbO3-0.8(Li0.01(K0.5Na0.5)0.99)NbO3 | 4.42523 | 442.9986 | 0.3316 | 102.8493 | 103 |
0.2AgNbO3-0.8(Li0.02(K0.5Na0.5)0.98)NbO3 | 4.47379 | 466.5985 | 0.3190 | 101.9665 | 93 |
0.2AgNbO3-0.8(Li0.04(K0.5Na0.5)0.96)NbO3 | 4.57545 | 490.7290 | 0.2826 | 101.1512 | 88 |
Claims (5)
- (LipK1-p)NbO3 (여기서, p는 실수이고 0<p<1 임) 분말을 제조하기 위하여 Li, K, Nb 및 O를 몰비에 따라 계산하고 Li2CO3 분말, K2CO3 분말 및 Nb2O5 분말을 칭량하여 준비하는 단계;
칭량된 Li2CO3 분말, K2CO3 분말 및 Nb2O5 분말을 혼합하고 분쇄하는 단계;
분쇄된 Li2CO3 분말, K2CO3 분말 및 Nb2O5 분말을 800~1100℃에서 하소하여 상기 (LipK1-p)NbO3 (여기서, p는 실수이고 0<p<1 임) 분말을 합성하는 단계;
(LiqNa1-q)NbO3 (여기서, q는 실수이고 0<q<1 임) 분말을 제조하기 위하여 Li, Na, Nb 및 O를 몰비에 따라 계산하고 Li2CO3 분말, Na2CO3 분말 및 Nb2O5 분말을 칭량하여 준비하는 단계;
칭량된 Li2CO3 분말, Na2CO3 분말 및 Nb2O5 분말을 혼합하고 분쇄하는 단계;
분쇄된 Li2CO3 분말, Na2CO3 분말 및 Nb2O5 분말을 800~1100℃에서 하소하여 상기 (LiqNa1-q)NbO3 (여기서, q는 실수이고 0<q<1 임) 분말을 합성하는 단계;
합성된 상기 (LipK1-p)NbO3 (여기서, p는 실수이고 0<p<1 임) 분말과 합성된 상기 (LiqNa1-q)NbO3 (여기서, q는 실수이고 0<q<1 임) 분말을 원하는 몰비의 조성에 따라 칭량한 후, 칭량된 상기 (LipK1-p)NbO3 (여기서, p는 실수이고 0<p<1 임) 분말과 상기 (LiqNa1-q)NbO3 (여기서, q는 실수이고 0<q<1 임) 분말을 혼합하고 분쇄하는 단계;
분쇄된 상기 (LipK1-p)NbO3 (여기서, p는 실수이고 0<p<1 임) 분말과 상기 (LiqNa1-q)NbO3 (여기서, q는 실수이고 0<q<1 임) 분말을 800~1100℃에서 하소하여 {Lim(KnNa1-n)1-m}NbO3 (여기서, m은 실수이고 0<m<1 이고, n은 실수이고 0<n<1 임) 분말을 합성하는 단계; 및
상기 {Lim(KnNa1-n)1-m}NbO3 (여기서, m은 실수이고 0<m<1 이고, n은 실수이고 0<n<1 임) 분말과 AgNbO3 분말을 이용하여 xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 (여기서, m은 실수이고 0<m<1 이고, n은 실수이고 0<n<1 이며, x는 실수이고 0<x<1 이고, y는 실수이고 0<y<1 임) 분말을 합성하는 단계를 포함하는 압전 세라믹스 제조방법.
- 삭제
- 삭제
- 제1항에 있어서, 상기 xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 분말을 합성하는 단계는,
xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 (여기서, m은 실수이고 0<m<1 이고, n은 실수이고 0<n<1 이며, x는 실수이고 0<x<1 이고, y는 실수이고 0<y<1 임) 분말을 제조하기 위하여 상기 {Lim(KnNa1-n)1-m}NbO3 분말과 상기 AgNbO3 분말을 원하는 조성의 몰비에 따라 칭량하는 단계;
칭량된 {Lim(KnNa1-n)1-m}NbO3 분말과 AgNbO3 분말을 혼합하고 분쇄하는 단계; 및
분쇄된 {Lim(KnNa1-n)1-m}NbO3 분말과 AgNbO3 분말을 800~1100℃에서 하소하여 상기 xAgNbO3-y{Lim(KnNa1-n)1-m}NbO3 (여기서, m은 실수이고 0<m<1 이고, n은 실수이고 0<n<1 이며, x는 실수이고 0<x<1 이고, y는 실수이고 0<y<1 임) 분말을 합성하는 단계를 포함하는 압전 세라믹스 제조방법.
- 삭제
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CN109650885A (zh) * | 2018-12-11 | 2019-04-19 | 中国科学院上海硅酸盐研究所 | 一种掺镧铌酸银无铅反铁电储能陶瓷材料及其制备方法 |
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KR20090010446A (ko) * | 2007-07-23 | 2009-01-30 | 한국전기연구원 | 센서 및 액추에이터용 비납계 압전 세라믹 조성물 및 그제조방법 |
KR100884719B1 (ko) | 2007-07-06 | 2009-02-19 | 한국전기연구원 | 압전 액츄에이터용 무연 압전 자기 조성물 |
KR20090108423A (ko) * | 2008-04-11 | 2009-10-15 | 한국세라믹기술원 | 페로브스카이트 구조를 가지는 무연계 압전 세라믹스 및 그제조방법 |
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KR100884719B1 (ko) | 2007-07-06 | 2009-02-19 | 한국전기연구원 | 압전 액츄에이터용 무연 압전 자기 조성물 |
KR20090010446A (ko) * | 2007-07-23 | 2009-01-30 | 한국전기연구원 | 센서 및 액추에이터용 비납계 압전 세라믹 조성물 및 그제조방법 |
KR20090108423A (ko) * | 2008-04-11 | 2009-10-15 | 한국세라믹기술원 | 페로브스카이트 구조를 가지는 무연계 압전 세라믹스 및 그제조방법 |
Cited By (2)
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CN109650885A (zh) * | 2018-12-11 | 2019-04-19 | 中国科学院上海硅酸盐研究所 | 一种掺镧铌酸银无铅反铁电储能陶瓷材料及其制备方法 |
CN109650885B (zh) * | 2018-12-11 | 2022-02-08 | 中国科学院上海硅酸盐研究所 | 一种掺镧铌酸银无铅反铁电储能陶瓷材料及其制备方法 |
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