KR101077853B1 - Film type wafer unit having light transmittance and flexibility and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a film type wafer unit having light transmittance and flexibility and a method of manufacturing the same.
According to an embodiment of the present invention, a film-type wafer unit having a light transmittance and flexibility and a method of manufacturing the same include a PET film having light transmissibility and flexibility for transmitting light in visible and ultraviolet regions. Cutting to form a film type substrate layer; Washing the film base layer to remove organic impurities from the film base layer; Drying the washed film-like base layer; Plasma cleaning the dried film-like base layer; It may include a lithography step in which a lithography process for completing a film type wafer unit on the cleaned film type substrate layer.

Description

Film type wafer unit having light transmissibility and flexibility and manufacturing method

The present invention relates to a film-type wafer unit having a light transmittance and flexibility, and more particularly, to a master for making a replica for a biochip such as a blood test chip using photolithography. It relates to a film-type wafer unit having a light transmittance and flexibility that can be utilized as a mold material for the master) and a method of manufacturing the same.

Numerous university research teams, national research institutes, and other microfluidics research teams working on biochips have put a lot of research and effort into creating economic replicas.

Generally, research institutes or research teams use silicon wafers or glass wafers used in semiconductor processes. As biochip research becomes active, the demand for silicon wafers or glass wafers is steadily increasing in the field of biochip and microfluidics research.

However, the above prior art has the following problems.

Silicon wafers may have quality and properties that are suitable for nanoscale processes, such as IC integrated circuits, but they are obtained from micrometer scale photolithography processes such as biochips or microfluidics, which are being actively studied recently. Compared to the feature size, it has more than necessary quality and characteristics and is a relatively expensive material. Therefore, it is inevitable that excess expenditure is inevitable in the research of biochips, and it is recognized as an economic burden for research and development. .

In addition, since the silicon wafer is not light transmissive, it is difficult to be used for backside lithography during the photolithography process.

In addition, the silicon wafer is stacked on the silicon wafer in a multi-layer lithography operation by stacking a plurality of patterning masks, because the silicon wafer itself is basically opaque in the visible light region, a separate expensive alignment equipment The disadvantage is the need for a film aligner.

Glass wafers also have the disadvantage that they are more expensive than necessary compared to materials used for research such as biochips, and have a thickness of about millimeters (mm) and thus cannot exhibit flexibility.

In addition, glass wafers are only a few millimeters thick and are transparent only within the visible range, while exhibiting relatively low UV light permeability under conditions using 360-nm ultraviolet (UV) wavelengths. Due to the large influence of scattering and refractions occurring in the glass wafer and at the upper and lower interfaces during UV transmission, it is difficult to be applied to backside lithography.

The present invention has been proposed to solve the above problems, the film-type wafer unit and its manufacturing can be used as a mold material for the master for making a replica that satisfies both economical and quality To provide a method.

According to an embodiment of the present invention for achieving the above object, a film-type wafer unit having a light transmittance and flexibility, and a method of manufacturing the same, a light transmissibility and flexibility for transmitting light in the visible and ultraviolet region cutting a PET film having flexibility to form a film type substrate layer; Washing the film base layer to remove organic impurities from the film base layer; Drying the washed film-like base layer; Plasma cleaning the dried film-like base layer; It may include a lithography step in which a lithography process for completing a film type wafer unit on the cleaned film type substrate layer.

In addition, the film base layer may be a laminated PET (Polyester) film having a thickness of 160 to 180 micrometers.

In addition, in the forming of the film type substrate layer, the film type substrate layer may be cut to correspond to the spinner shape and size of the PR spin coating.

In addition, the washing step, the step of washing the film-type base layer using ethanol or thinner (thinner) for 30 seconds to 1 minute; And washing the film-like base layer with deionized water (dH ₂ O: deionized water).

In addition, in the drying step, the vacuum suction may be performed while drying in a clean bench to maintain the surface of the PET film.

Further, in the plasma cleaning step, under the conditions of the output 100W, cleaning time 5 minutes to 6 minutes, vacuum degree 0.65 torr, air injection amount 25 ~ 30 cc / min with respect to the surface to be PR spin-coated in the dried film type substrate layer The surface may be characterized by performing an air plasma cleaning to modify the surface to be aqueous.

According to an embodiment of the present invention, a film type wafer unit having light transmittance and flexibility may include a film base layer formed of a PET film having light transmittance and flexibility for transmitting light in a visible light region and an ultraviolet region; And it may include a PR layer applied to the film-like base layer.

In addition, the PR layer may be formed by applying the film type substrate layer after plasma cleaning.

According to the film-type wafer unit having a light transmittance and flexibility according to the embodiment of the present invention as described above and a method of manufacturing the same, a film-type base material layer having flexibility and light transmittance and a PR (Photo Register) coated on the film-type base layer By providing a film type wafer unit having a) layer and a method of manufacturing the same, there is an advantage that can be widely used as a mold material for making a replica by exhibiting flexibility and light transmittance.

In addition, it is very inexpensive compared to conventional wafer products, and has the advantages of both flexibility and light transmittance.

In addition, since the film-type wafer unit itself is transparent in the visible region, it is relatively easy to align the patterning mask without the need for an expensive film aligner for multi-layer lithography. The advantage is that you can do it.

In addition, since the film type substrate layer of the film type wafer unit is about 83.3%, and has excellent UV light premeability, back incident etching using ultraviolet light (UV) in the wavelength range of 360 nm used for photolithography is performed. The effect is that you can utilize backside lithography.

In addition, the use of the film-type wafer unit according to the embodiment of the present invention has an advantage that it is very easy to manufacture a double-sided patterned replica.

In addition, since the film-type wafer unit according to the embodiment of the present invention is very easy to cut (dicing), there is an effect that the degree of freedom of handling of the wafer unit is very excellent.

1 is a flowchart of a method of manufacturing a film type wafer unit having light transparency and flexibility according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a film type wafer unit that is an article manufactured by the manufacturing method of FIG. 1.
FIG. 3 is a drawing substitute photograph in which a double layer patterning mask is stacked on the film type wafer unit shown in FIG. 2.
FIG. 4 is a conceptual view illustrating a backside lithography process using the film type wafer unit shown in FIG. 2.
FIG. 5 is a drawing substitute photograph of a PDMS replica manufactured using a film type wafer unit master. FIG.
FIG. 6 is a micrograph of the central microchannel shown in FIG. 5.
FIG. 7 is a conceptual view for explaining that the film wafer unit illustrated in FIG. 2 is applied as a film wafer unit master having a three-dimensional shape.
8 is a conceptual diagram illustrating a process of fabricating a double-sided patterned replica using the film type wafer unit shown in FIG. 2.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

1 is a flow chart of a film-type wafer unit manufacturing method having light transmittance and flexibility according to an embodiment of the present invention.

Referring to FIG. 1, the method of manufacturing a film-type wafer unit having light transparency and flexibility according to an embodiment of the present invention includes cutting the light-transmissive flexible PET film into a circular plate to form a film base layer (S100), It may comprise the step (S120) of washing the film-like base layer with an organic solvent to remove the organic impurities from the film-like base layer.

Subsequently, this embodiment may include drying the washed film-like base layer by vacuum suction (S120) and plasma cleaning the dried film-type base layer (S130).

The process after S130 may be performed in the same manner as in the conventional lithography process using silicon and glass wafers, and a lithography step (S140) in which a lithography process for completing a film type wafer unit on a cleaned film type substrate layer may be performed. . For example, several times baking in lithography step S140, PR spin coating and final development may be included.

Such a series of manufacturing methods may be implemented through manufacturing conditions and a device such as a conventional semiconductor manufacturing apparatus or a lithographic apparatus to be described in detail below, and no additional equipment and equipment are needed.

FIG. 2 is a cross-sectional view of the film type wafer unit 200 which is an article manufactured by the manufacturing method of FIG. 1.

1 or 2, through the above-mentioned steps (S100 ~ S140), the film type substrate layer 210 having a flexibility and light transmittance, and PR (Photo Register) coated on the film base layer 210 The film type wafer unit 200 having the layer 220 can be manufactured.

Here, the film type substrate layer 210 may be formed of a laminated PET film (hereinafter, abbreviated as 'PET film') or OHP film material having a thickness of 160 to 180 micrometers.

In this embodiment, it will be described that the film type substrate layer 210 is formed of a PET film.

In detail, the film-like base layer 210 is formed of a PET film having a thickness of 160 to 180 micrometers, for example, 170 micrometers, and has flexibility, and includes any one of a tube shape, a dome shape, and a cone shape. When processed into a dimensional shape, the shape of the film-like base layer 210 may be modified into a corresponding three-dimensional shape.

In addition, the film type substrate layer 210 has excellent UV light permeability of about 83.3% when exposed to ultraviolet (UV) light of 360 nm wavelength for photolithography under a thickness of 170 micrometers. ) That is, the film type substrate layer 210 may have a high light transmittance even in the visible light region and may have an excellent light transmittance in the ultraviolet region.

In this case, the photolithography process may include a process including exposure, development, baking, chromium oxide film etching, inspection, and correction corresponding to the pattern design data.

In addition, the PR layer 220 may have any one thickness value selected from a thickness of 3 to 100 micrometers, and may have a light transmittance in the visible or ultraviolet region.

According to the step S100 of forming the film type substrate layer 210, the film type substrate layer 210 may be cut to correspond to the shape and size of a spinner for PR spin coating.

For example, the film type substrate layer 210 may be cut to a spinner diameter size of PR spin coating having a diameter of 4 inches (or approximately outer diameter φ100) to suit existing process equipment. In this case, the worker may easily cut the film type substrate layer 210 using a round cutter or using an existing cutting equipment.

In addition, the film type substrate layer 210 may be cut to a size corresponding to the diameter of 6 inches to 8 inches, so that it can be applied to large spinners of 6 inches to 8 inches or more in diameter, and accordingly applied to existing process equipment Versatility that can be used can be ensured.

On the other hand, according to the step of washing with an organic solvent (S110), the film-type base layer 210 may be washed using ethanol or thinner (thinner) as an organic solvent, the polymer film of the film-based base layer 210 It may be washed for 30 seconds to 1 minute to prevent damage.

In addition, the washed film-like base layer 210 may be finish-washed by deionized water (dH ₂ O: deionized water) to prevent the change of the electrical charge amount. Here, the finish wash may be performed several times.

In addition, according to the drying step (S120), in order to avoid the deposition of dust or particulate matter in the air it is preferable to dry in a clean bench (clean bench) and at the same time to ensure that no drying traces of the wash water through the vacuum suction. Do.

In addition, according to the plasma cleaning step (S130), the output 100W, cleaning time 5 minutes to 6 minutes, vacuum degree 0.65 torr for the surface to be PR spin coated in the film-type substrate layer 210 dried in the drying step (S120) In addition, the surface may be modified to be hydrophilic by performing air plasma cleaning under an air injection amount of 25 to 30 cc / min.

Here, since the cleaning time of the plasma cleaning step (S130) has a complementary relationship with the output of the plasma cleaning equipment and the air injection amount, it may be set differently according to the equipment setting.

Thereafter, the PR layer 220 may be formed on the surface of the washed film-like base layer 210 through a lithography step (S140).

PR may be a well-known transparent photosensitive polymer for glass wafers, or may be a photosensitive liquid commercially available in the industry.

In the lithography step S140, the PR may be applied to the surface of the film type substrate layer 210 by using a coating apparatus having a spinner for PR spin coating.

Since the film type wafer unit 200 having the film type substrate layer 210 and the PR layer 220 has flexibility and light transmittance, a plurality of patterning masks without a separate expensive film aligner or the like are required. By stacking (pattering mask) it can be applied to a multi-layer lithography operation as shown in FIG.

FIG. 3 is a photograph substituted for drawing a double layer patterning mask on the film type wafer unit 200 shown in FIG. 2.

Referring to FIG. 3, it can be seen that the double layer patterning masks 300 and 301 are stacked on the film type wafer unit 200 and overlapped.

Here, it can be seen that the film type wafer unit 200 and the double layer patterning masks 300 and 301 are each transparent but are photographed in a state where only the background is gray.

In addition, each of the patterning masks 300 and 301 itself may be manufactured through a pattern forming lithography process using the film type wafer unit 200 as a blank mask.

FIG. 4 is a conceptual view illustrating a backside lithography process using the film type wafer unit shown in FIG. 2.

In the backside lithography process, as shown in FIG. 4A, the patterning mask 302 is applied to the back surface of the film type wafer unit 200 coated with the PR layer 220 on the film type substrate layer 210. After lamination, an exposure process of irradiating the UV 400 in the back direction with a UV irradiation device (not shown) is performed, and the rest of the other general photolithography processes (eg, development, baking, chromium oxide film etching, inspection, Modification) may be performed.

In this case, as shown in FIG. 4B, the film type wafer unit 200 includes a film type wafer unit master 200a in which a pattern 221 corresponding to the patterning mask 302 is formed on the film type substrate layer 210. Can be

Here, the pattern 221 may be a PR pattern. In addition, the film type wafer unit 200 may be applied to a photolithography process to be a mold material for a master for making a replica.

In the back incident etching process in which the UV 400 is irradiated in the rear direction to form the patterning 221, the thin thickness of the film type substrate layer 210 or the film type wafer unit master 200a is etched pattern 221. Can be a very important factor in determining resolution.

That is, compared to the conventional glass wafer (glass wafer), since the film-type base layer 210 has a thickness of 1/100 or less, it is possible to suppress the scattering effect of the UV (400) to the maximum, and thus It is possible to realize the resolution of the feature (feature) significantly improved compared to the back incident etching process used.

As shown in (c) of FIG. 4, the film type wafer unit master 200a having such improved resolution has a polymer for forming a replica containing silicon, such as PDMS, to make a biochip or a polydimethylsiloxane (PDMS) replica. 500 may be applied on the film type substrate layer 210 toward the pattern 221.

Thereafter, the replica forming polymer 500 may be completed with a PDMS replica 500a as shown in FIG. 4D through a baking process and a film wafer unit master 200a removal process.

FIG. 5 is a drawing substitute photograph of a PDMS replica 500b for a biochip manufactured using a film type wafer unit master, and FIG. 6 is a micrograph of the central channel A microchannel shown in FIG. 5.

The PDMS replica 500b is manufactured by a film-type wafer unit master, which is a very inexpensive mold material and can have a high resolution of resolution as can be seen through the shape of the enlarged center (A) microchannel.

FIG. 7 is a conceptual view for explaining that the film wafer unit illustrated in FIG. 2 is applied as a film wafer unit master having a three-dimensional shape.

Unlike the conventional wafers, the film type wafer unit of the present embodiment is formed to be extremely thin, with excellent flexibility. As shown in FIG. 7A, the film type wafer unit has a three-dimensional shape, such as a tube shape, and is patterned through a photolithography process. It can be made in the form of a film-type wafer unit master 200b having a 221.

Referring to FIG. 7B, a replica forming polymer 500 containing silicon such as PDMS is filled in the internal mold space 230 of the three-dimensional film-shaped wafer unit master 200b. Thereafter, the polymer 500 for forming a replica containing silicon is a PDMS replica 500c having a three-dimensional pattern as shown in FIG. 7C through a baking process and a film-type wafer unit master 200b removal process. Can be completed.

FIG. 8 is a conceptual diagram illustrating a process of fabricating a double-sided patterned replica using the film-type wafer unit shown in FIG. 2, whereas the conventional copying method duplicates an etched pattern on one master. The double-sided patterned replica 500d can be manufactured very easily using the plurality of film-type wafer unit masters 200c and 200d having light transparency.

Referring to FIG. 8, the plurality of film type wafer unit masters 200c and 200d may also be applied to a double-side pattering replica.

Each of the film type wafer unit masters 200c and 200d is also formed by laminating a patterning mask on the film type wafer unit described above and performing a photolithography process.

Each film type wafer unit master 200c, 200d may have a pattern 221 and a film type substrate layer 210, and is very easy to make a double-sided patterned replica 500d.

That is, as shown in FIG. 8A, the film type wafer unit masters 200c and 200d may be spaced apart from each other so that the patterns 221 face each other.

As shown in (b) of FIG. 8, by using the spaced apart space as a mold space 231, a replica forming polymer 500 containing silicon such as PDMS may be filled in the mold space 231. Subsequently, the replica-forming polymer 500 containing silicon may be completed as a double-sided patterned replica 500d as shown in FIG. 8C through a baking process and a film-type wafer unit master 200c and 200d removal process. Can be.

Freedom of handling of film-type wafer unit masters 200c and 200d for double-sided patterning since cutting of necessary areas after photolithography is very easy due to the material properties of film-type wafer unit masters 200c and 200d. Can be very good.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. For example, a person skilled in the art can change the material, size and the like of each constituent element depending on the application field or can combine or substitute the embodiments in a form not clearly disclosed in the embodiment of the present invention, Of the range. Therefore, it should be understood that the above-described embodiments are to be considered in all respects as illustrative and not restrictive, and that such modified embodiments are included in the technical idea described in the claims of the present invention.

200: film type wafer unit
200a, 200b, 200c, 200d: film type wafer unit master
210: film type substrate layer
220: PR floor
300, 301, 302: patterning mask

Claims (9)

Forming a film type substrate layer by cutting a PET film having light transmissibility and flexibility for transmitting light in the visible and ultraviolet regions;
Washing the film base layer to remove organic impurities from the film base layer;
Drying the washed film-like base layer;
Air plasma cleaning is performed on the surface to be PR spin-coated in the film-type substrate layer dried under a condition of 100 W of output, 5 to 6 minutes of cleaning time, 0.65 torr of vacuum degree and 25 to 30 cc / min of air injection amount. Performing plasma cleaning to modify the surface;
A lithography step in which a lithography process for completing a film type wafer unit is performed on the cleaned film type substrate layer.
A film type wafer unit manufacturing method having light transmittance and flexibility.
The method of claim 1,
The film base material layer,
Characterized in that it is a laminated PET (Polyester) film having a thickness of 160 to 180 micrometers
A film type wafer unit manufacturing method having light transmittance and flexibility.
The method of claim 1,
In the step of forming the film type substrate layer,
The film-like base layer is cut to correspond to the spinner shape and size of the PR spin coating
A film type wafer unit manufacturing method having light transmittance and flexibility.
The method of claim 1,
The washing step,
Washing the film base layer with ethanol or thinner for 30 seconds to 1 minute; And
It characterized in that it comprises the step of washing the film-like base layer with deionized water (dH ₂ O: deionized water)
A film type wafer unit manufacturing method having light transmittance and flexibility.
The method of claim 1,
In the drying step,
In order to maintain the surface clean state of the PET film characterized in that the vacuum suction is performed while drying in a clean bench (clean bench)
A film type wafer unit manufacturing method having light transmittance and flexibility.
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