KR101051073B1 - Repair method and repair system of halftone mask - Google Patents

Abstract

It is an object of the present invention to remove defects in a halftone mask by using a laser, to efficiently form a barrier film in a defect area, to control the thickness of the barrier film, and to remove defects even after a pellicle film is formed, as well as in real time. The present invention relates to a repair method and a system capable of performing a repair process by adjusting the transmittance to ensure a uniformity of the transmittance of a repair site.

Halftone mask, repair, defect

Description

Repair method of half-tone mask and repair system of the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for repairing a defect area when a defect occurs in a semiconductor and a thin film transistor substrate of a TFT-LCD. Specifically, a defect of a halftone mask is removed by using a laser, The barrier film can be efficiently formed, the thickness of the barrier film can be controlled, defects can be removed even after the pellicle film is formed, and the repair process can be performed by adjusting the transmittance in real time, thereby ensuring uniformity of the transmittance of the repair site. The repair method and system which can be performed.

In the liquid crystal display TFT and the color filter, many layers are deposited and applied, and each layer deposited or applied is patterned by a photolithography process. A single layer is formed through one cycle of photolithography. If a process of photolithography is reduced, a large economic effect can be obtained. However, the conventional general photomask is uneconomical because it has a structure in which only one pattern can be realized.

In order to solve the problems of the general photomask, a slit mask, a gray tone mask, a halftone mask, and the like have been developed.

The slit mask uses scattering of light, and when light passes through a slit thinner than a slit that guarantees the straightness of the applied wavelength, scattering occurs to an adjacent part, and the entire light energy is dispersed. However, in the case of such a slit mask, since the light energy scattered in the fine slit is uneven, the exposure energy for each position is different, there is a point that it is difficult to obtain a uniform residual film thickness by forming irregularities by position.

The gray tone mask has a light transmission portion through which light is completely transmitted, a light blocking portion through which light is completely blocked, and a gray tone layer which transmits with reduced amount of irradiated light. However, since the gray tone mask controls the amount of light transmitted using the diffraction phenomenon of the light passing through the fine pattern, the gray tone mask is formed when the area of the gray tone pattern to be formed using the gray tone mask is larger than or equal to a predetermined size. In the case of more than a predetermined size it is difficult to expect uniform patterning.

The halftone mask is a mask formed of a light transmitting portion formed on a transparent substrate, a light blocking portion completely blocking light, and a semi-transmissive portion adjusting a transmittance to transmit a part of light. Can be.

In the case of such a halftone mask, the light passing through the transflective portion uniformly passes through the positions to form a uniform residual film thickness for each position.

However, the process of forming the halftone mask has the advantage of simplification of the process and requires an additional process of mask manufacturing, and thus has the disadvantage of increasing the process due to the additional process of manufacturing the mask.

That is, when defects such as defects in manufacturing a mask or defects such as pin holes exist, they are repaired and used. In the case of repairing defects formed in the transflective part, the appropriate transmittance is adjusted to be equivalent to the semi-transmissive part of the adjacent non-defective part. The level of light must pass through to keep the thickness of the final residual film uniform.

That is, when a defect such as a pinhole occurs in the semi-transmissive layer of the halftone mask, the amount of light transmitted through the semi-transmissive part is changed. When the amount of light is transmitted, the exposure energy for each position is different when using a photoresist or an organic insulating film. Since the residual film thickness by position forms irregularities, it is difficult to obtain a uniform residual film thickness. When the step is formed in this way, a defect is generated by opening an undesired part in a post-process such as dry etching or ashing, and a repair of a defective part for the transflective part is required.

In order to achieve a level equivalent to the transmittance of the adjacent semi-permeable portion for such a repair process, a method of removing the defective portion and depositing a local portion of the semi-transmissive portion has conventionally been performed.

However, in such a deposition method, it is difficult to adjust the transmittance with respect to the local area, so that the transmittances of adjacent semi-transmissive portions and the transmittances of the repaired portions are different, resulting in a problem that a step in the deposited film is widened. The step of the evaporated film thus opened, there is still a problem that the defect is generated by opening the unwanted portion in the process, such as dry etching, ashing. In particular, the variation in the transmittance was increased according to the deposition conditions, so that it was extremely difficult to form a transmittance equivalent to the transflective portion of the adjacent part.

The present invention has been made to solve the above problems, an object of the present invention is to remove the defects of the halftone mask using a laser, to effectively form a barrier film in the defect region, and to control the thickness of the barrier film In addition, the present invention provides a repair method and a system capable of ensuring defects even after the pellicle film is formed and performing a repair process by adjusting the transmittance in real time to ensure uniformity of the transmittance of the repair site.

The present invention provides a halftone mask repair method for repairing a defect portion of a semi-transmissive region of a halftone mask by irradiating a laser to a raw material and depositing the defect portion of a semi-transmissive layer in a repair process for solving the above problems. Make it available.

In the above-described repair method, the repair process of the defective portion, 1) removing the defective portion of the transflective region; 2) depositing a semi-transmissive thin film on the removed defect region.

In particular, the raw material for the thin film deposition using a laser in the above-mentioned repair process is Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, It is characterized by including any one or two or more elements selected from N, C.

In addition, the semi-transmissive thin film deposited using the above-described raw material is Mo _x O _y, Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W _x O _y , W + Si, W + Si _x N _y , W + SiO _2, Cr, Cr + W + SiO _2, Cr + W + Si _x N _y, Cr _x O _y , Cr + Si, Cr + Si _x N _y , Cr + SiO ₂ Cr + Mo + Si _It may be made of any one of _x N _y , Cr + Mo + SiO _2, Cr + Mo + W + Si _x N _y , Cr + Mo + W + SiO ₂ . Through this, it is possible to maintain a stable attachment state after the repair process. In addition, in addition to using such a mixed raw material, the deposition on the defect site is formed by depositing Cr, Mo or W and re-depositing any one of Si, SiO ₂ , Si _x N _y on the deposited film. It may also be performed as.

In addition, in the above-described process, in the step 1), the process of removing the defective portion may remove the defective portion in the same pattern as the pattern shape of the defective portion, thereby improving the efficiency of the repair process.

In addition, in the process of removing defects using a laser in the present invention, the defects are removed, and the size of the edge portion of the circular beam of the laser is compensated by using an optical proximity correction (OPC) mask. Preferably to be carried out.

In addition, it is more preferable to perform the edge lock on the laser light source in order to remove the defective part but to prevent the removal of the parts other than the defective part.

In addition, in the halftone mask repair process according to the present invention, after the raw material is deposited to form a semi-transmissive thin film as a blocking film, the transmittance adjusting step of measuring and adjusting the transmittance of the transflective thin film is further included. In addition, it is desirable that such a process can be repeated until the transmittance control meets a set range, thereby improving the efficiency of the process. Of course, in this case, step 3) is preferably carried out within 0.01 ~ 10% of the control of the transmittance.

In addition, in the repair process, it is preferable to use a laser of 400 nm or less as the light source used in steps 1) and 2.

In addition, step 2) may be configured to be performed by a laser light source having a pulse repetition rate of 1Hz ~ 10KHz.

In particular, in the step 2) of the present invention, it is possible to provide a repair method of a halftone mask, which uses a flow rate of a carrier gas used for supplying raw materials within 50 to 500 sccm.

In addition, it is desirable to provide a halftone mask repair method, characterized in that supplied to 20 ℃ ~ 80 ℃ to lower the vapor pressure of the raw material.

In the present invention, it is preferable to provide a process of a repair system capable of performing the repair of the halftone mask according to the present invention described above.

Specifically, the basic configuration of the repair system according to the present invention, the thin film deposition chamber; Raw material supply unit for providing a raw material into the chamber; And an optical system for ionizing a raw material with a laser in the chamber to deposit a thin film on a defect portion of a halftone mask.

In this case, the optical system is characterized in that it comprises a laser and a laser transmission unit.

In addition, it is preferable to form a repair system of a halftone mask, characterized in that the laser of 400nm or less, or a laser having a repetitive pulse period of 1Hz ~ 10KHz.

The raw material supply unit is configured to supply a smooth raw material, the raw material generating unit for storing the raw material supplied to the chamber, sublimation of the raw material and mixed with the carrier gas; It is preferable to further comprise a temperature control unit for maintaining the carrier gas or the raw material above the sublimation point.

In addition, the above-described raw material generating unit is preferably provided with at least one or more in the system according to the present invention to supply two or more raw materials at the same time.

In addition, the temperature control unit, the heater unit for heating the raw material; A temperature sensor for sensing a temperature heated by the heater unit; It may be configured to include; a temperature controller for controlling the temperature by sensing the temperature in the temperature sensor.

In addition, the raw material supply unit is preferably connected to at least one carrier gas supply unit for transporting the raw material into the chamber.

The halftone repair system according to the present invention preferably further comprises a purge gas supply unit for purifying residues of raw materials remaining in the chamber through the purge pipe.

In addition, the halftone repair system may further include a residual gas exhaust unit for discharging the residue remaining after the reaction in the chamber to the outside of the chamber.

In forming the above-described residual gas exhaust unit, the residual gas exhaust unit may include: a material collecting unit collecting material from the residual gas exhausted from the chamber; A heat treatment unit separating the material not separated from the material collection unit through a heat treatment process; A filter unit for filtering the exhaust gas passing through the material collecting unit and the heat treatment unit; A pump unit for pumping the exhaust gas passing through the filter unit; And an exhaust pressure and a flow rate adjusting unit for adjusting the pressure of the pump unit.

The raw material used in the halftone mask repair system according to the present invention as described above is Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N , C, any one or two or more elements are selected.

In addition, as described above, the transflective thin film is Mo _x O _y, Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W _x O _y , W + Si, W + Si _x N _y , W + SiO _2, Cr, Cr + W + SiO _2, Cr + W + Si _x N _y, Cr _x O _y , Cr + Si, Cr + Si _x N _y , Cr + SiO ₂ Cr + Mo + Si _x N _y Of course, it can be formed of any one selected from Cr + Mo + SiO _2, Cr + Mo + W + Si _x N _y , Cr + Mo + W + SiO ₂ .

According to the present invention, it is possible to remove defects in the halftone mask by using a laser, to effectively form a barrier film in the defect region, to control the thickness of the barrier film, and to remove defects even after the pellicle film is formed, as well as in real time. By adjusting the transmittance, the repair process can be performed, ensuring the uniformity of the transmittance of the repaired part, and ensuring the stability of the repair of the halftone mask by eliminating the open defect after repairing, and reducing the manufacturing cost. There is.

Hereinafter, a specific configuration and operation according to the present invention will be described with reference to the drawings.

According to the present invention, when a defective area (defect) occurs in the clear area or the semi-transmissive part of the halftone mask, the present invention efficiently removes this part and mediates the raw material (for example, a metal raw material). It is a summary to repair by irradiating a laser. In other words, by irradiating a laser to the raw material, a semi-transmissive film (blocking film) is deposited on the defect site of the semi-transmissive layer to repair the defect site of the semi-transmissive layer of the halftone mask.

In particular, when repairing a defect portion occurring in a semi-transmissive portion of a halftone mask, the defect position is identified by identifying a position where a defect occurs basically, 1) removing the defect portion of the semi-transmissive region, and 2) removing the defect portion. Laser deposition of the semi-permeable thin film in the site region.

Referring to FIGS. 1 and 2, it is a basic process to check a defective location to identify a defective location, laser deposit a semi-transmissive thin film on the defective area, and measure the transmittance to complete the repair.

Specifically, first, by loading the halftone mask to be repaired to determine the defective position (S1). Thereafter, the defective film (defect site) where the defect is generated is removed (S4). A semi-transmissive (HT) thin film is deposited thereon to have a transmittance equivalent to the transflective portion around it (S5). In this basic process, it is preferable to perform pattern matching and edge lock for more efficient repair (S2, S3). That is, the S2 process and the S3 process correspond to processes that may be added or removed as needed.

In order to remove the defects in which the defect occurs, a laser is used, and in this case, in the case of a fine size of 1 μm or less, an OPC mask is used to prevent the thin film from being circularly removed due to the inherent characteristics of the laser beam. It is preferable.

The pattern matching operation described above is to remove defects by matching a pattern in a shape equivalent to a pattern of a pattern existing in a mask in a process of removing a defect region of a transflective portion. This is to prevent the removal of unnecessary parts and to improve the efficiency of the repair. As shown in FIG. 2, the pattern of the halftone mask is copied through a pattern match, and the image is shaped to remove the defective film or deposit a thin film as it is.

In addition, the edge lock process is a function of matching the edge of the existing pattern and the defective pattern to be removed in order to precisely align the laser beam irradiation area in the step of removing the above-described defects (defects).

Subsequently, the transmittance of the deposited thin film (blocking film) portion is measured to determine whether it meets the criteria for setting the transmittance with the adjacent transflective region, and if not, the above-described process is repeated (S6). The measurement of the transmittance is performed in real time to complete the process when the set criteria are reached (S7).

In the repair process described above with reference to FIG. 3, the semi-transmissive (HT) thin film deposition process (S5), which is a process of forming a blocking film through ion deposition on the removed portion, removing the defect portion (S4), will be described in detail. Shall be.

In the deposition process using a laser, when a laser is irradiated to a raw material to be supplied, only a metal atom is separated while a bond is broken between ligands bonded to a metal. When such a reaction occurs on a metal pattern, a metal atom is deposited in a thin film form. Is to use the principle.

In the present invention, the removal and deposition of defects in the halftone mask uses a laser, and the irradiation of the laser uses an optical system composed of a laser, a laser head, and the like. A laser of a certain wavelength is used to remove the defect portion of the transflective portion. Since the thermal phenomenon does not occur when the residual film is removed at a pulse width of 15 picoseconds (ps) or less, it is preferable to use a short wavelength. More preferably, a pulse repetition rate of 1 Hz to 10 KHz, which is fast enough not to give a laser or thermal phenomenon of 400 nm or less, may be used. More preferably, a laser having a pulse repetition rate of 1 KHz to 10 KHz can be used.

In the present invention, the deposition of the defect site is based on supplying a raw material to the defect site (T3) and depositing a thin film on the defect site using a laser (T4). For a more efficient process, when performing the process, it is possible to supply the purification gas or the protection gas required for the process (T1, T2), and when the process is completed, cut off the supply of raw materials (T5) and complete the process (T6). do. The completion of the process may be performed until measuring the transmittance of the deposition site reaches the standard.

It is preferable to use a material made of a metal raw material as the above-described raw material, and in this case, it is preferable to lower the vapor pressure of the raw material so that the decomposition reaction of the raw material is performed slowly. In addition, the barrier film formed by vapor deposition is slowly increased in thickness due to this (slowly formed) decomposition reaction, resulting in higher density.

Therefore, the flow rate of the carrier gas to be supplied is preferably used within 50 ~ 500sccm, it is more preferable to use the temperature of the raw material in the 20 ~ 80 ℃ range in order to lower the vapor pressure of the raw material.

In the case of depositing the barrier film for repair of the semi-transmissive part, adjusting the thickness is controlling the transmittance of the barrier film, and it is preferable that the range of the transmittance is maintained within 0.5%, and the main factor of such transmittance control is the laser power to be processed. , Temperature, flow rate, number of scan repetitions, and more. Of course, these parameters can be adjusted to singular or plural.

That is, in the present invention, the transmittance must be precisely controlled by the thickness of the thin film. In a conventional repair method such as a gray tone mask, light is transmitted or blocked, so only a certain thickness or more is required to block light.

However, in the case of halftone masks, the thickness varies from 10 to 90% for each company and each product, which is different depending on the line / space width in the active area design. do.

In the present invention, the parameter for adjusting the thickness can be largely adjusted as follows.

First, adjust the laser's wave length, power intensity, pulse repetition, pulse duration, or the flow rate of the transport gas that transports raw materials (e.g., inert gas). Flow rate such as Ar and He).

Next, adjust the temperature of the raw material, adjust the residence time of the raw material in the vacuum area of the chamber in which the reaction is performed, use the raw material with low vapor pressure as the raw material itself, or speed up the scan in the deposition area. It is possible to control or to control the silt size in the deposition area or the type of raw material.

In particular, the present invention controls the parameters of the raw material to maximize the efficiency of the deposition.

The metal raw material constituting the raw material in the present invention is any one selected from Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, C One containing one or two or more elements can be used. For example, a combination of Cr + Mo, Cr + W, Cr + Mo + W, Cu + Mo, Cu + W, Cu + Mo + W, Mo + Si, W + Si is possible.

In addition, the semi-transmissive thin film deposited using a laser is Mo _x O _y, Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W _x O _y , W + Si, W + Si _x N _y , W + SiO _2, Cr, Cr + W + SiO _2, Cr + W + Si _x N _y, Cr _x O _y , Cr + Si, Cr + Si _x N _y , Cr + SiO ₂ Cr + Mo + Si _x It may be formed of any one selected from N _y , Cr + Mo + SiO _2, Cr + Mo + W + Si _x N _y , Cr + Mo + W + SiO ₂ . Particularly, in the case of Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W + Si, W + Si _x N _y , W + SiO ₂ , a single component by washing In the case of Mo and W, the problem of falling out of the film even after deposition occurs. However, if the deposition is performed using the raw material of such a combination, it is well tolerated in cleaning, and thus a stable state can be ensured even after deposition.

In addition, the deposition on the defect site separately deposits Cr, Mo, or W, and re-deposits any one of Si, SiO ₂ , and Si _x N _y on the deposited film, thereby exhibiting excellent cleaning resistance. Done. In particular, in the case of MoSi, since the transmittance is different for each of Ghi Line and I-Line (UV illumination wavelength), the thin film deposited with MoSi is more excellent than the previously deposited thin film.

Hereinafter, a configuration of a system as an embodiment for performing the repair process of the above-described halftone mask according to the present invention will be described with reference to FIGS. 4 to 5.

Referring to Figure 4, in order to perform the repair of the half-tone mask according to the present invention, a carrier gas supply unit 100 for supplying a carrier gas for transporting the raw material and the raw material generated by mixing the raw material with the carrier gas It includes a supply unit 200, and an optical system 500 for irradiating a laser for repair. The purge gas supply unit 300 for supplying a purge gas to purify the inside of the chamber 300 for an efficient process and the protective gas supply unit 400 for supplying a protective gas to exclude the outflow of raw materials in the chamber. It may include, and may further include a residual gas treatment unit 700 for discharging the gas remaining after the reaction of the raw material for the repair.

5, a detailed description will be made through a system block diagram forming a specific embodiment of each of these components according to the present invention.

In the driving of the whole system, the carrier gas supplied from the carrier gas supply unit 100 is supplied to the raw material generator 210 through a pipe and mixed with the raw material to generate raw materials, and the raw material is inside the chamber 600. When supplied through the furnace pipe, the optical system 500 is irradiated with a laser and a blocking film is deposited on the defect portion of the halftone mask through an ionic reaction to complete the reaction (measurement of the transmittance may be repeated again). Thereafter, the remaining gas remaining in the chamber 600 is exhausted through the residual gas processing unit 700.

The function of the component part which consists of such a system is demonstrated concretely.

The carrier gas supply unit 100 is for transporting raw materials, and is connected to the raw material generating unit 210 in the raw material supply unit 200 in which the raw material is stored, and mixed with the material in the raw material generating unit 210. The raw material is supplied to the chamber 600. The valve 110 is mounted at the beginning of the pipe connected to the carrier gas supply unit 100 to block the injection of gas when no injection of gas is required, and a flow control device is provided at the rear of the valve 110. 120 is provided to be able to control the flow rate.

Before and after the flow control device 120, it is preferable to form the valve (110, 111) to prevent the back flow of gas. Such a flow control device is preferably formed in the purge gas supply unit 300 and the protective gas supply unit 400, which will be described later, each component is as shown is connected to the pipe. In particular, such a pipe is preferably provided with a valve and a heater in addition to the flow control device.

The carrier gas supply unit 100 may be provided with at least one, each carrier gas supply unit is connected to the raw material generator 210 is connected by a pipe. As shown in the drawing, when three carrier gas supply parts and three raw material generators are connected to each other, three or more raw materials may be mixed and used at the same time in the chamber, and of course, they may be used individually.

The raw material generating unit 210 stores a material used for thin film deposition, and the raw material generating unit 210 detects a heater unit for heating such material above a sublimation point, and a temperature heated by the heater. It is preferable to have a temperature control unit, a temperature control unit consisting of a temperature controller (not shown) for controlling the temperature of the heater by sensing the temperature of the temperature sensor.

The gas supplied from the carrier gas (same purge gas and protective gas as described below) is preferably an inert gas or a nitrogen gas. In front of the chamber, which is the end of the injection gas injection line, a plurality of valves are installed so that when the process starts, raw materials are immediately injected into the chamber when the valve is opened. It is preferable to form as many as possible to prevent the mixing of the raw materials.

The purification gas supply unit 300 may supply the purification gas to a pipe connecting the raw material generation unit 210 and the chamber 600 through a pipe. The pipe for supplying the purge gas is discharged to the heat treatment unit described later without passing through the chamber.

The material stored in the raw material generator 210 is heated by a heater (not shown), sublimates the material into a gas, and injected through a gas injector (not shown) that is gradient in the raw material generator. The raw material is produced by mixing with the carrier gas.

The raw material generated in this manner is exhausted through the gas exhaust port provided in the raw material generating unit 210 and injected into the chamber. At this time, the temperature of the heater unit is controlled through a temperature controller (not shown) using a temperature sensor. The pipe for injecting the carrier gas is equipped with a heater and a temperature sensor to control the temperature not to fall below the sublimation point of the raw material, and also to control the amount of gas because the vapor pressure of the sublimed gas varies depending on the temperature.

The raw material injected into the chamber 600 is used to deposit a blocking film on the defect portion of the mask, and the purge gas is sprayed toward the optical window to prevent the formation of a thin film on the optical window to which the laser is irradiated. The protective gas forms an air curtain to prevent the leakage of raw materials.

After the deposition process is completed on the defect portion of the halftone mask, the residual gas, which is a gas not involved in thin film deposition, is exhausted through the residual gas exhaust device 700.

The residual gas exhaust device 700 is a heat treatment for separating the material not separated from the material collecting unit 710 and the material collecting unit 710 for collecting the material by using a cooling device for the residual gas exhausted from the chamber through a heat treatment process Part 720, the filter unit 730, 740 to filter the metal particles in the exhaust gas through the two procedures, the pump 750 for pumping the residual gas in the chamber at a constant pressure through the residual gas exhaust line connected to the chamber It may be formed to include an exhaust flow rate adjusting unit for controlling the exhaust pressure of the residual gas exhaust line by adjusting the pressure of the pump. Each of these components is of course connected to the exhaust line. The filter unit may be formed of a primary filter 730 for filtering large particles and a secondary filter 740 for filtering fine particles, and the heat treatment unit 720 is formed of a heater.

Gas supply units for supplying each substance of the system according to the present invention as described above are connected by a pipe for supplying gas to the chamber, and each pipe to form a heater to heat the raw material above the sublimation point. . Usually, it is preferable to heat about 10 degreeC higher than the sublimation point of a raw material.

As described above, the injection gases may be heated through the heater so that the carrier gas may be mixed with the sublimed material, and further, when the purge gas or the protective gas reaches the chamber, it may be well mixed with the raw materials mixed with the material.

In addition, since the carrier gas, the purge gas, and the protective gas can be commonly used inert gas or nitrogen gas, the supply portion of such a gas, as in this embodiment, the carrier gas, the protective gas may be formed separately from the supply portion, It is also possible to share the supply and use the gas injection line alone. That is, after the inert gas or nitrogen gas of the carrier gas supply part is exhausted from the supply part, it is injected into the chamber through the exhaust pipe formed separately in each supply part so as to perform different functions.

6 to 7 illustrate various exemplary embodiments of the optical system 500 and the chamber 600 in the repair system described with reference to FIG. 5. Basically, the same reference numerals in the drawings are the same, and the ultimate action of the entire optical system 500 is a halftone mask by scanning a laser on a raw material supplied into the chamber 600 in the repair system according to the present invention. The deposition is to be performed on the repair site.

Referring to FIG. 6, the basic configuration includes a plurality of beam splitters S in the laser irradiation path under the laser head irradiating the laser, and a shape mask of the laser (silt mask) and a tube lens. 540, the objective lens 550, the chamber (C) with an optical window, the substrate 560, and the auto focus (520), the CCD camera unit 530, a plurality of lighting units (L1, L2, L3) It is configured to include).

Referring to FIG. 7, this shows the Dep. Laser in the embodiment of FIG. 6. Laser and Zap. The point of using a laser and the laser beam forming parts Q1 and Q2 are further included, and the other structure is substantially the same.

It is preferable that the above-mentioned chamber C has a through-pellicle which allows the chamber to move laterally on the line to which the laser beam is irradiated in order to perform post-repair even when a defect occurs even after the thin film is deposited. . In the conventional photomask process, there is a process of attaching a protective film called pellicle after defective repair of a mask. In the related art, after the protective film is attached, repair thereof is impossible. However, in the present invention, since a laser of a wavelength at which the material used for the protective film is transmitted is used, repair is possible even after the protective film is attached. For example, after a process of depositing and repairing a defect portion of a halftone mask, a process of attaching a protective film is performed, and the chamber is moved to a side from the laser pass line position to repair a defect of the semi-transmissive film found after the protective film is attached. After that, the beam passes through the laser to repair the defective part. The chamber must move because the pellicle is attached to the pellicle attachment frame inserted between the mask and the pellicle, so that the chamber cannot be machined.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical idea of the present invention should not be limited to the embodiments of the present invention but should be determined by the equivalents of the claims and the claims.

1 schematically shows a flowchart of a repair process of a halftone mask according to the present invention.

2 briefly illustrates a process of pattern matching in a repair process according to the present invention.

3 is a flow chart of a supply and repair of raw materials in a repair system according to the present invention.

4 and 5 illustrate a configuration diagram of a repair system as an embodiment capable of implementing a repair method according to the present invention.

6 to 7 illustrate various embodiments of the optical system in the repair system according to the present invention.

Claims (27)

By irradiating laser on the raw material and depositing on the defect part of the transflective layer Repair the defects in the semi-transmissive area of the halftone mask, 1) removing defects in the semi-transmissive region, and supplementing the size of the edge portion of the circular beam of the laser by using an optical proximity correction (OPC) mask; 2) depositing a semi-transmissive thin film on the removed defect region; halftone mask repair method comprising a. delete The method according to claim 1, The raw material includes any one or two or more elements selected from Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, C Halftone mask repair method, characterized in that. The method according to claim 1, The transflective thin film is Mo _x O _y, Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W _x O _y , W + Si, W + Si _x N _y , W + SiO _2, Cr, Cr + W + SiO _2, Cr + W + Si _x N _y, Cr _x O _y , Cr + Si, Cr + Si _x N _y , Cr + SiO ₂ Cr + Mo + Si _x N _y , Cr + Mo + SiO _{2 And} Cr + Mo + W + Si _x N _y , Cr + Mo + W + SiO ₂ , wherein the halftone mask repair method is formed. By irradiating laser on the raw material and depositing on the defect part of the transflective layer Repair the defects in the semi-transmissive area of the halftone mask, 1) removing the defective part of the semi-transmissive area; 2) depositing a semi-transmissive thin film on the removed defective region, including the deposition on at least one of Cr, Mo, W, A method for repairing a halftone mask, characterized in that formed by re-depositing any one of Si, SiO ₂ , Si _x N _y on the deposited film. The method according to any one of claims 1, 3, 4, 5, wherein step 1) comprises: A method of repairing a halftone mask, wherein the defect portion is removed in a pattern matched with the pattern of the portion where the defect occurs. The method of claim 5, wherein step 1) Removing the defects, the halftone mask repair method, characterized in that performed by supplementing the size of the edge (edge) of the circular beam of the laser using an optical proximity correction (OPC) mask. The method according to any one of claims 1, 3, 4, 5, 7, wherein step 1) comprises: Removing the defects, but performing edge lock on the laser light source in order to prevent the removal of the portions other than the defects. The method according to any one of claims 1, 3, 4, 5, After step 2), The halftone mask repair method, characterized in that it further comprises a step 3) transmittance adjustment step of measuring and adjusting the transmittance of the transflective thin film. The method according to claim 9, Step 3) is a halftone mask repair method, characterized in that the adjustment of the transmittance is performed within 0.01 ~ 10%. The method according to claim 9, Step 1) and step 2) is a halftone mask repair method, characterized in that using a laser of 400nm or less. The method according to claim 9, Step 2) is a halftone mask repair method, characterized in that the step performed by a laser light source having a pulse repetition rate of 1Hz ~ 10KHz. The method according to claim 9, Step 2) is a repair method of a halftone mask, characterized in that to use the flow rate of the carrier gas to supply within 50 ~ 500sccm. The method according to claim 9, Halftone mask repair method, characterized in that supplied to 20 ~ 80 ℃ to reduce the vapor pressure of the raw material. Thin film deposition chambers; A raw material including a raw material generating unit for storing the raw material supplied to the chamber, subliming the raw material and mixing it with a carrier gas, and a temperature control unit for maintaining the carrier gas or raw material above the sublimation point Material supply; An optical system for ionizing a raw material with a laser in the chamber to deposit a transflective thin film on a defect portion of a halftone mask; Repair system of a halftone mask comprising a. 16. The method of claim 15, The optical system includes a laser and a laser head unit. 18. The method of claim 16, The laser is a repair system of a halftone mask, characterized in that the laser of 400nm or less. The method according to claim 17, The laser is a repair system of a halftone mask, characterized in that the laser having a pulse repetition rate of 1Hz ~ 10KHz. delete 16. The method of claim 15, The at least one raw material generating unit repair system of a halftone mask, characterized in that provided at least one. 16. The method of claim 15, The temperature control unit, A heater unit for heating raw materials; A temperature sensor for sensing a temperature heated by the heater unit; A temperature controller for controlling a temperature by sensing a temperature in the temperature sensor; Repair system of a halftone mask, characterized in that comprising a. 16. The method of claim 15, The raw material supply unit repair system of the halftone mask, characterized in that connected to at least one carrier gas supply for transporting the raw material into the chamber. 16. The method of claim 15, The halftone repair system, The halftone mask repair system, characterized in that further comprising a purge gas supply for purifying the residue of the raw material remaining in the chamber through the purification pipe. The method according to claim 23, The halftone repair system may further include a residual gas exhaust unit configured to discharge a residue remaining after the reaction in the chamber to the outside of the chamber. 27. The method of claim 24, The residual gas exhaust unit, A material collecting unit collecting material from residual gas exhausted from the chamber; A heat treatment unit separating the material not separated from the material collection unit through a heat treatment process; A filter unit configured to filter the exhaust gas passing through the material collection unit and the heat treatment unit; A pump unit for pumping the exhaust gas passing through the filter unit; And Exhaust pressure and flow rate adjusting unit for adjusting the pressure of the pump unit; Repair system of a halftone mask, characterized in that comprises a. 16. The method of claim 15, The raw material includes any one or two or more elements selected from Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, C The repair system of the halftone mask characterized by the above-mentioned. 16. The method of claim 15, The transflective thin film is Mo _x O _y, Mo + Si, Mo + Si _x N _y , Mo + SiO ₂ , W _x O _y , W + Si, W + Si _x N _y , W + SiO _2, Cr, Cr + W + SiO _2, Cr + W + Si _x N _y, Cr _x O _y , Cr + Si, Cr + Si _x N _y , Cr + SiO ₂ Cr + Mo + Si _x N _y , Cr + Mo + SiO _{2 ,} Cr + Mo + W + Si _x N _y, Cr + Mo + W + SiO ₂ halftone repair system of the mask, characterized in that any one of selected from.

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