KR101044279B1 - Cmp 연마패드와 그의 제조방법 - Google Patents
Cmp 연마패드와 그의 제조방법 Download PDFInfo
- Publication number
- KR101044279B1 KR101044279B1 KR1020090069960A KR20090069960A KR101044279B1 KR 101044279 B1 KR101044279 B1 KR 101044279B1 KR 1020090069960 A KR1020090069960 A KR 1020090069960A KR 20090069960 A KR20090069960 A KR 20090069960A KR 101044279 B1 KR101044279 B1 KR 101044279B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- dye
- cmp polishing
- absorbing material
- light absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 176
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000011358 absorbing material Substances 0.000 claims abstract description 71
- 239000000975 dye Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 53
- 239000006096 absorbing agent Substances 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 17
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 10
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 10
- PLXBWHJQWKZRKG-UHFFFAOYSA-N Resazurin Chemical compound C1=CC(=O)C=C2OC3=CC(O)=CC=C3[N+]([O-])=C21 PLXBWHJQWKZRKG-UHFFFAOYSA-N 0.000 claims description 8
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 claims description 6
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 claims description 5
- 239000001045 blue dye Substances 0.000 claims description 5
- 125000000853 cresyl group Chemical group C1(=CC=C(C=C1)C)* 0.000 claims description 5
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims description 5
- XJCPMUIIBDVFDM-UHFFFAOYSA-M nile blue A Chemical compound [Cl-].C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4[O+]=C3C=C(N)C2=C1 XJCPMUIIBDVFDM-UHFFFAOYSA-M 0.000 claims description 5
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 claims description 5
- HSSLDCABUXLXKM-UHFFFAOYSA-N resorufin Chemical compound C1=CC(=O)C=C2OC3=CC(O)=CC=C3N=C21 HSSLDCABUXLXKM-UHFFFAOYSA-N 0.000 claims description 5
- KUUVQVSHGLHAKZ-UHFFFAOYSA-N thionine Chemical compound C=1C=CC=CSC=CC=1 KUUVQVSHGLHAKZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 4
- INCIMLINXXICKS-UHFFFAOYSA-M pyronin Y Chemical compound [Cl-].C1=CC(=[N+](C)C)C=C2OC3=CC(N(C)C)=CC=C3C=C21 INCIMLINXXICKS-UHFFFAOYSA-M 0.000 claims description 4
- 239000001022 rhodamine dye Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- 239000011148 porous material Substances 0.000 description 16
- 239000002002 slurry Substances 0.000 description 13
- 229920002635 polyurethane Polymers 0.000 description 10
- 239000004814 polyurethane Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- -1 phthalocyanine compound Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 125000004396 dithiobenzyl group Chemical group 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000001020 pyronin dye Substances 0.000 description 2
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical class [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- RDLVSWJHDFENPL-UHFFFAOYSA-N 4-tert-butylbenzene-1,2-dithiol Chemical compound CC(C)(C)C1=CC=C(S)C(S)=C1 RDLVSWJHDFENPL-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000219745 Lupinus Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (14)
- 내부 또는 표면에 광흡수재가 분산되어 있고,상기 광흡수재에 레이저 빔이 조사되어 적어도 일면에 복수개의 홀이 형성되어 있으며,상기 광흡수재는 근적외선 내지 가시광선 영역의 레이저 빔을 흡수하도록 선택된 것을 특징으로 하는 CMP 연마패드.
- 제1항에 있어서,상기 복수개의 홀의 직경은 레이저 빔의 파장에 의하여 결정되는 것을 특징으로 하는 CMP 연마패드.
- 제2항에 있어서,상기 홀의 직경은 레이저의 파장에 비례하는 것을 특징으로 하는 CMP 연마패드.
- 제1항에 있어서,상기 레이저 빔의 중심파장은 300 내지 20,000㎚의 범위에 있는 것을 특징으로 하는 CMP 연마패드.
- 제1항에 있어서,상기 복수개의 홀의 직경은 1 내지 200㎛인 것을 특징으로 하는 CMP 연마패드.
- 제1항에 있어서,상기 광흡수재는 300 내지 15,000㎚ 파장대에서 광을 흡수하는 것을 특징으로 하는 CMP 연마패드.
- 제1항에 있어서,상기 광흡수재는 시아닌(cyanine)계 염료, 디티올렌(dithiolene)계 염료, 디이모늄(diimmonium)계 염료, 퀴논(quinone)계 염료, 로다민(rhodamine)계 염료, 빅토리아(victoria)계 염료, 메틸렌(methylene)계 염료, 브릴리언트(brilliant)계 염료, 나프탈렌(naphthalene)계 염료, 레피드-필터 겔브(repid-filter gelb), 에크트블로(echtblau), 피나올톨(pinaorthol) 염료, 피리리움(pyrylium)계 염료, 티오닌(thionin)계 염료, 닐 블루(nile blue)계 염료, 크레실(cresyl)계 염료, 옥사진(oxazine)계 염료, 레소루핀(resorufin)계 염료, 레사주린(resazurin계 염료, 피로닌(pyronin)계 염료, 아트리딘(acridine)계 염료 및 키톤(kiton)계 염료로 구성된 군에서 선택된 적어도 하나인 것을 특징으로 하는 CMP 연마패드.
- 연마패드의 표면에 광흡수재층이 형성되어 있고,상기 광흡수재층에 레이저 빔이 조사됨으로써 상기 광흡수재층을 관통하여 연마패드의 소정의 깊이까지 복수개의 홀이 형성되며,상기 광흡수재층은 근적외선 내지 가시광선 영역의 레이저 빔을 흡수하는 것을 특징으로 하는 CMP 연마패드.
- 제8항에 있어서,상기 광흡수재층은 연마패드 표면에 광흡수재를 도포하거나, 광흡수재가 분산된 필름을 연마패드의 표면에 결합하여 형성된 것을 특징으로 하는 CMP 연마패드.
- CMP 연마패드에 형성할 홀의 직경을 결정하는 단계;상기 결정된 홀의 직경에 따라 사용될 레이저의 종류를 결정하는 단계;상기 결정된 레이저의 종류에 따라 근적외선 내지 가시광선 영역의 레이저 빔을 흡수하도록 광흡수재의 종류를 결정하는 단계;상기 결정된 광흡수재를 CMP 연마패드에 분산시키는 단계; 및상기 레이저의 빔을 광흡수재가 분산된 CMP 연마패드에 조사하여 홀을 형성하는 단계;를 포함하는 것을 특징으로 하는 CMP 연마패드의 제조방법.
- 제10항에 있어서,상기 홀의 직경은 레이저의 파장에 비례하는 것을 특징으로 하는 CMP 연마패드의 제조방법.
- 제10항에 있어서,상기 광흡수재는 시아닌(cyanine)계 염료, 디티올렌(dithiolene)계 염료, 디이모늄(diimmonium)계 염료, 퀴논(quinone)계 염료, 로다민(rhodamine)계 염료, 빅토리아(victoria)계 염료, 메틸렌(methylene)계 염료, 브릴리언트(brilliant)계 염 료, 나프탈렌(naphthalene)계 염료, 레피드-필터 겔브(repid-filter gelb), 에크트블로(echtblau), 피나올톨(pinaorthol) 염료, 피리리움(pyrylium)계 염료, 티오닌(thionin)계 염료, 닐 블루(nile blue)계 염료, 크레실(cresyl)계 염료, 옥사진(oxazine)계 염료, 레소루핀(resorufin)계 염료, 레사주린(resazurin계 염료, 피로닌(pyronin)계 염료, 아트리딘(acridine)계 염료 및 키톤(kiton)계 염료로 구성된 군에서 선택된 적어도 하나인 것을 특징으로 하는 CMP 연마패드의 제조방법.
- 제10항에 있어서,상기 CMP 연마패드에 형성될 홀은 복수개이고, 상기 홀들의 분포형태 및 깊이는 연마패드의 위치를 변화시켜 조절하는 것을 특징으로 하는 CMP 연마패드의 제조방법.
- 제10항에 있어서,상기 CMP 연마패드에 형성될 홀은 복수개이고, 상기 홀들의 분포형태 및 깊이는 레이저의 위치를 변화시켜 조절하는 것을 특징으로 하는 CMP 연마패드의 제조방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090069960A KR101044279B1 (ko) | 2009-07-30 | 2009-07-30 | Cmp 연마패드와 그의 제조방법 |
EP10804606.1A EP2461353B1 (en) | 2009-07-30 | 2010-04-30 | Cmp polishing pad and method for manufacturing same |
PCT/KR2010/002728 WO2011013893A2 (ko) | 2009-07-30 | 2010-04-30 | Cmp 연마패드와 그의 제조방법 |
JP2012522742A JP5711739B2 (ja) | 2009-07-30 | 2010-04-30 | Cmp研磨パッドとその製造方法 |
CN201080038956.0A CN102484058B (zh) | 2009-07-30 | 2010-04-30 | Cmp抛光垫及其制造方法 |
US13/387,398 US20120184194A1 (en) | 2009-07-30 | 2010-04-30 | Cmp polishing pad and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090069960A KR101044279B1 (ko) | 2009-07-30 | 2009-07-30 | Cmp 연마패드와 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110012293A KR20110012293A (ko) | 2011-02-09 |
KR101044279B1 true KR101044279B1 (ko) | 2011-06-28 |
Family
ID=43529791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090069960A Expired - Fee Related KR101044279B1 (ko) | 2009-07-30 | 2009-07-30 | Cmp 연마패드와 그의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120184194A1 (ko) |
EP (1) | EP2461353B1 (ko) |
JP (1) | JP5711739B2 (ko) |
KR (1) | KR101044279B1 (ko) |
CN (1) | CN102484058B (ko) |
WO (1) | WO2011013893A2 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10226853B2 (en) * | 2013-01-18 | 2019-03-12 | Applied Materials, Inc. | Methods and apparatus for conditioning of chemical mechanical polishing pads |
WO2015023442A1 (en) | 2013-08-10 | 2015-02-19 | Applied Materials, Inc. | Cmp pads having material composition that facilitates controlled conditioning |
US20150044783A1 (en) * | 2013-08-12 | 2015-02-12 | Micron Technology, Inc. | Methods of alleviating adverse stress effects on a wafer, and methods of forming a semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030012655A (ko) * | 2001-08-02 | 2003-02-12 | 에스케이에버텍 주식회사 | 마이크로홀이 형성된 화학적 기계적 연마패드 |
US20070235904A1 (en) * | 2006-04-06 | 2007-10-11 | Saikin Alan H | Method of forming a chemical mechanical polishing pad utilizing laser sintering |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
EP0984846B1 (en) * | 1997-01-13 | 2004-11-24 | Rodel, Inc. | Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern |
US6039775A (en) * | 1997-11-03 | 2000-03-21 | 3M Innovative Properties Company | Abrasive article containing a grinding aid and method of making the same |
JP2001071256A (ja) * | 1999-08-31 | 2001-03-21 | Shinozaki Seisakusho:Kk | 研磨パッドの溝形成方法及び装置並びに研磨パッド |
US6652764B1 (en) * | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6380270B1 (en) * | 2000-09-26 | 2002-04-30 | Honeywell International Inc. | Photogenerated nanoporous materials |
CN100496896C (zh) * | 2000-12-01 | 2009-06-10 | 东洋橡膠工业株式会社 | 研磨垫 |
JP2004537175A (ja) * | 2001-08-02 | 2004-12-09 | エスケーシー カンパニー,リミテッド | レーザーを使用した化学的機械的研磨パッドの製造方法 |
US7534498B2 (en) * | 2002-06-03 | 2009-05-19 | 3M Innovative Properties Company | Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body |
JP3737787B2 (ja) * | 2002-07-16 | 2006-01-25 | 株式会社東芝 | 半導体装置の製造方法 |
US20050196710A1 (en) * | 2004-03-04 | 2005-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus |
JP4868708B2 (ja) * | 2004-03-05 | 2012-02-01 | 日東電工株式会社 | レーザーダイシング・ダイボンド用粘着シート及びこれを用いた半導体装置の製造方法 |
JP5288690B2 (ja) * | 2005-05-13 | 2013-09-11 | 東洋ゴム工業株式会社 | 研磨パッドの製造方法および研磨パッドの溝加工方法 |
US8796125B2 (en) * | 2006-06-12 | 2014-08-05 | Kovio, Inc. | Printed, self-aligned, top gate thin film transistor |
JP2008188661A (ja) * | 2007-02-07 | 2008-08-21 | Sumitomo Electric Ind Ltd | レーザ加工方法 |
US8129098B2 (en) * | 2007-11-20 | 2012-03-06 | Eastman Kodak Company | Colored mask combined with selective area deposition |
KR101563204B1 (ko) * | 2008-04-01 | 2015-10-26 | 에프엔에스테크 주식회사 | 제어된 공동 형성을 가지는 연마 패드 |
JP2010027952A (ja) * | 2008-07-23 | 2010-02-04 | Toshiba Corp | 半導体装置の製造方法 |
-
2009
- 2009-07-30 KR KR1020090069960A patent/KR101044279B1/ko not_active Expired - Fee Related
-
2010
- 2010-04-30 US US13/387,398 patent/US20120184194A1/en not_active Abandoned
- 2010-04-30 CN CN201080038956.0A patent/CN102484058B/zh not_active Expired - Fee Related
- 2010-04-30 EP EP10804606.1A patent/EP2461353B1/en not_active Not-in-force
- 2010-04-30 WO PCT/KR2010/002728 patent/WO2011013893A2/ko active Application Filing
- 2010-04-30 JP JP2012522742A patent/JP5711739B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030012655A (ko) * | 2001-08-02 | 2003-02-12 | 에스케이에버텍 주식회사 | 마이크로홀이 형성된 화학적 기계적 연마패드 |
US20070235904A1 (en) * | 2006-04-06 | 2007-10-11 | Saikin Alan H | Method of forming a chemical mechanical polishing pad utilizing laser sintering |
Also Published As
Publication number | Publication date |
---|---|
EP2461353A4 (en) | 2013-01-09 |
US20120184194A1 (en) | 2012-07-19 |
CN102484058B (zh) | 2015-06-17 |
EP2461353A2 (en) | 2012-06-06 |
KR20110012293A (ko) | 2011-02-09 |
EP2461353B1 (en) | 2015-09-09 |
CN102484058A (zh) | 2012-05-30 |
WO2011013893A2 (ko) | 2011-02-03 |
JP2013500600A (ja) | 2013-01-07 |
WO2011013893A3 (ko) | 2011-03-24 |
JP5711739B2 (ja) | 2015-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI687312B (zh) | 由積層製造製程所生產之研磨墊 | |
TWI754275B (zh) | 拋光墊及形成其之方法 | |
TW201726325A (zh) | 多孔化學機械研磨墊 | |
US8357027B2 (en) | Polishing pad and method of manufacture | |
KR101044279B1 (ko) | Cmp 연마패드와 그의 제조방법 | |
TW202413468A (zh) | 先進研磨墊配方 | |
CN1549756A (zh) | 利用激光束和掩模制造抛光垫的方法 | |
TW200812754A (en) | Method of forming a chemical mechanical polishing pad utilizing laser sintering | |
JP2016172306A (ja) | 砥石、加工装置、及び砥石の製造方法 | |
WO2021252537A1 (en) | Additive manufacturing of polishing pads | |
KR101044281B1 (ko) | 기공이 형성된 cmp 연마패드와 그의 제조방법 | |
KR101744694B1 (ko) | 혼합 기공 구조를 갖는 cmp패드 | |
KR101177497B1 (ko) | 기공이 형성된 cmp 연마패드 및 기공의 형성방법 | |
US20210379726A1 (en) | Additive Manufacturing of Polishing Pads | |
KR20180096125A (ko) | 혼합된 캐비티 구조를 갖는 cmp 공정용 연마 패드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20090730 |
|
PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20110211 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20110531 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20110620 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20110621 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20150623 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20150623 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160620 Year of fee payment: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20160620 Start annual number: 6 End annual number: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170608 Year of fee payment: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20170608 Start annual number: 7 End annual number: 7 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20190401 |