KR101014764B1 - Carbon Nanotube Insulator Semiconductor System for Chemical and Biological Sensors - Google Patents

Abstract

The present invention provides a carbon nanotube insulator semiconductor system having a high sensitivity and can be applied as a chemical / biological sensor, and a method of manufacturing the same. The carbon nanotube insulator semiconductor system for a chemical / biological sensor of the present invention includes a substrate layer. , An alumina nanoframe synthesized with multi-walled carbon nanotubes on the substrate layer, and an electrolyte solution covering the multiwalled carbon nanotubes on the alumina nanoframe, a central portion of the alumina nanoframe covering an edge of the alumina nanotle- A cover layer for opening the sensor region and a reference electrode for fixing the potential of the electrolyte solution, and the ECIS system manufactured through the alumina nanoframe fabrication, multi-walled carbon nanotube synthesis and bonding process of the present invention. Is a nanosphere made by functionalizing the ends of highly reactive multi-walled carbon nanotubes. There is a so take advantage of the high sensitivity performance is to implement superior chemical / biological sensors effect.

ECIS, EIS, Electrolyte Solution, Carbon Nanotube, Multi Wall, MWCNT

Description

CNTs-Insulator-Semiconductor System for Chemical and Biological Sensor Applications}

1 is a diagram showing an ECIS system using carbon nanotubes according to a first embodiment of the present invention;

2A to 2C are cross-sectional views illustrating a method of synthesizing a multi-walled carbon nanotube according to a first embodiment of the present invention;

Figure 3 is a SEM photograph of a multi-walled carbon nanotubes synthesized in the alumina nano-frame according to the first embodiment of the present invention,

4 is a view showing a bonding process according to a first embodiment of the present invention;

5 is a SEM photograph after the bonding process of the alumina nano-frame / silicon oxide film / p-type silicon substrate according to the first embodiment of the present invention,

6 and 7 are diagrams showing the results of a capacitance-voltage (C-V) measurement of the ECIS system according to the first embodiment of the present invention.

8 is a diagram showing an ECIS system using carbon nanotubes according to a second embodiment of the present invention;

9 is a view showing an ECIS system using carbon nanotubes according to a third embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

100: silicon substrate

101: silicon oxide film

102: Alumina Nano Framework

103: multi-walled carbon nanotubes

104: cover layer

105: electrolyte solution

105: reference electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to carbon nanotube insulator semiconductor systems, and in particular, to electrolytic-carbon nanotube-insulator-semiconductor systems (ECIS systems) for chemical and biological sensors.

Carbon Nano Tube is a carbon allotrope made up of carbon that exists in large quantities on the earth. It is a material in which one carbon is combined with other carbon atoms and hexagonal honeycomb to form a tube, and the diameter of the tube is nanometer ( nm = 1 billionth of a meter) in a very small area. Carbon nanotubes (CNT) have excellent mechanical properties, electrical selectivity, excellent field emission characteristics, high-efficiency hydrogen storage medium characteristics, and are known as perfect new materials with few defects among existing materials.

Carbon nanotubes (CNTs) have excellent mechanical robustness and chemical stability, can exhibit both semiconductor and conductor properties, and are small in diameter and relatively long in length, so they can be used for flat panel display devices, transistors, and energy storage materials. It shows excellent properties as an applicator, and has great applicability as nano-sized various electronic devices.

Recently, interest in carbon nanotubes (CNTs) is increasing to develop new chemical and biological sensors. Already, sensor structures based on various types of carbon nanotubes (CNTs) have been proposed.

In most of the proposed sensors, carbon nanotubes (CNTs) are used as electrodes for sensing molecules in solution, or the resistance change characteristics generated when adsorption of charged particles on the surface of carbon nanotubes (CNTs) is applied to the sensors. It is utilized.

The former is similar to a commercially available carbon electrode sensor, but has a high sensitivity of vertically aligned carbon nanotubes (CNT). In the latter case, the electrical properties of single-walled carbon nanotubes (SWCNTs) appear to be useful, but single-walled carbon nanotubes (SWCNTs) are reliable field effect transistors. It should work.

The present invention has been proposed to solve the above problems of the prior art, and has an object to provide a carbon nanotube insulator semiconductor system having a high sensitivity and can be applied as a chemical / biological sensor and a method of manufacturing the same.

Carbon nanotube insulator semiconductor system for the chemical / biological sensor of the present invention for achieving the above object is a substrate layer; An alumina nanoframe bonded on the substrate layer and having a plurality of pores; Multi-walled carbon nanotubes filling the pores; And an electrolyte solution covering the alumina nanoframe while being in contact with the multi-walled carbon nanotubes.

Preferably, further comprising a cover layer covering the edge of the alumina nano-frame and opening the central portion of the alumina nano-frame-the sensor region, the electrolyte solution is in contact with the multi-walled carbon nanotubes exposed to the sensor region Characterized in that.

Preferably, the electrolyte solution is characterized by using any one solution selected from potassium chloride (KCl) solution, sodium chloride (NaCl) solution or dilute diluted sulfuric acid (diluted H ₂ SO ₄ ) solution.

Preferably, the reference electrode for fixing the potential of the electrolyte solution is characterized in that connected to the electrolyte solution.

In addition, the method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor of the present invention comprises the steps of preparing a substrate layer; Forming an alumina nanoframe having a plurality of pores; Growing multi-walled carbon nanotubes filling the pores by using the surface of the alumina nanoframe as a catalyst; Bonding a lower region of the alumina nano-frame on which the multi-walled carbon nanotubes are grown with the surface of the substrate layer; Forming a cover layer to open a sensor region on an upper region of the alumina nanoframe to which the multi-walled carbon nanotubes are exposed; And forming an electrolyte solution on the cover layer, the electrolyte solution contacting the multi-walled carbon nanotubes opened in the sensor region.

Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .

In the first embodiment to be described later, a capacitor composed of an electrolyte solution-carbon nanotube-insulator-semiconductor layer, that is, an ECIS (Electrolyte-CNTs-Insulator-Semiconductor) system to study the possibility of fusion of carbon nanotubes and CMOS technology Was produced.

And, in order to obtain carbon nanotubes, Aanodic Aluminum Oxide (AAO) technology is used to form alumina nano frames (Al ₂ O ₃ -template), which is useful for obtaining high density vertically aligned carbon nanotube arrays. It is a way. Vertically aligned carbon nanotubes are used as electrodes to change the surface potential of the semiconductor layer.

The structure of the ECIS system provided in the embodiment operates like a conventional EIS (Electrolyte-Insulator-Semiconductor) structure, but has the advantage of combining the CMOS technology and the synthesis technology of carbon nanotubes.

In addition, the possibility that the ECIS system according to an embodiment of the present invention can be applied as a chemical / biological sensor was verified by measuring capacitance characteristics of the manufactured ECIS system.

In addition, a wafer bonding technique was used to bond the carbon nanotube array to the surface of the semiconductor layer using an alumina nanoframe.

In addition, the carbon nanotube array provides many chemical and biological active sites, providing much improved sensitivity than commercial EIS systems, and the platinum reference electrode and 3.3 mol (M) of potassium chloride ( KCl) solution was shown to be able to operate smoothly as a liquid gate. At a certain voltage, the capacitance of the entire system has been shown to decrease dramatically, which means that the surface of the semiconductor layer is modulated by a platinum reference electrode. The effect of double layer capacitance at high frequencies has been observed to reduce the overall capacitance value.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a diagram illustrating an ECIS system using carbon nanotubes according to an embodiment of the present invention.

As shown in FIG. 1, a silicon substrate 100 implanted with p-type or n-type impurities, a silicon oxide film (SiO ₂ , 101) on the silicon substrate 100, and a multi-walled carbon nanotube on the silicon oxide film 101 ( MWCNT, an electrolyte solution filling the open area (sensor area) provided by the cover layer (104) and cover layer 104 on the alumina nano-frame 102, the structure embedded with (103) Electrolyte, 105, and the reference electrode 106 for fixing the potential of the electrolyte solution 105. Herein, the silicon substrate 100 outside the alumina nano-frame 102 is provided with source regions S and D, in which p-type or n-type impurities are implanted. For example, in the impurities implanted into the silicon substrate 100, the source region S and the drain region D, the p-type impurity is boron-based and the n-type impurity is phosphorus (P) or arsenic (As). .

In this way, the electrolyte solution 105-the multiwall carbon nanotube 103-the silicon oxide film 101-the silicon substrate 100 constitute an ECIS system.

The ECIS system of the present invention is similar to a commercially available Electro-Insulator-Semiconductor (EIS) system. However, as shown in FIG. 1, the interface between the electrolyte solution 105 and the silicon oxide film 101 is a multi-walled CNT 103 surrounded by alumina nano-frames (Al ₂ O ₃ -templete).

In addition, in FIG. 1, a reference electrode 106 is used to fix the potential of the electrolyte solution 105, and the electrolyte solution 105 is a 3.3 mol (M) potassium chloride (KCl) solution and sodium chloride (NaCl). ) Solution or dilute diluted sulfuric acid (diluted H ₂ SO ₄ ) solution is used. Since the electrolyte solution 105 is formed on the multi-walled carbon nanotubes 103 opened after the cover layer 104 is formed, the electrolyte solution 105 does not flow sideways, and furthermore, the electrolyte solution 105 does not flow with tension while being in contact with the cover layer 104.

The cover layer 104 is formed to limit the surface area of the multi-walled carbon nanotubes 103 in contact with the electrolyte solution 105 and to prevent unnecessary contact between the sensor area (non-sensor area) and the electrolyte solution 105. use. That is, the cover layer 104 covers the edge (non-sensor region) of the alumina nano-frame 102 and opens a central portion of the alumina nano-frame 102-the sensor region. The cover layer 104 is applied to any one selected from a photoresist, an insulating layer, or a polymer, preferably a photoresist. Here, the use of the photoresist as the cover layer 104 is because the photoresist is readily available and provides excellent coating properties. Meanwhile, in order for the cover layer 104 to cover the central portion of the alumina nano-frame 102, a process of applying the cover layer 104 to the entire surface of the alumina nano-frame 102 and selectively etching it is performed.

The silicon oxide film 101 is formed by thermal oxidation, and the thickness thereof is 25 nm.

The reference electrode 106 is formed of platinum or Ag / AgCl.

Hereinafter, a method of synthesizing multi-walled carbon nanotubes will be described with reference to FIGS. 2A and 2B.

2A and 2B are cross-sectional views illustrating a method of synthesizing a multi-walled carbon nanotube according to an embodiment of the present invention.

The present invention uses AAO (Anodic Aluminum oxide) template (A ₂ O ₃ -template) to synthesize multi-walled carbon nanotubes in an ECIS system.

Hereinafter, each step will be described in detail.

As shown in FIG. 2A, an aluminum thin plate 201 is oxidized to prepare an alumina nano template (Al ₂ O ₃ -nano template, 200) made of alumina 202 having a plurality of pores 203. In this case, a two-step anodization method is used to fabricate the porous alumina nano frames 200 in which pores 203 are regularly arranged.

The two-stage anodization method is an anodization method, and when the porous alumina nanoframe 200 is manufactured using the same, the pores 203 having uniform diameters are perpendicular to the alumina nanoframe 200. Arranged regularly.

In general, anodization is a kind of electrolysis method in which a thin aluminum sheet is used as an anode and a carbon electrode as a cathode in an acid electrolyte solution selected from oxalic acid, phosphoric acid, or sulfuric acid. It is known that the pores 203 are held inside the alumina 202 as it is oxidized to become alumina (Al ₂ O ₃ , 202).

In the two-stage anodization method, the thin aluminum sheet 201 is anodized for a long time (more than 10 hours) to dig the pores 203, and then immerse all oxide layers (alumina layers) constituting the pores 203 in an acid solution. Again a method of digging the pores 203 of the desired depth under the same conditions as the first anodization. Here, the spacing between the pores 203 is proportional to the voltage applied when anodizing, and the depth of the pores 203 is proportional to the time of anodizing. The diameter of the pores 203 may extend in an acid solution such as phosphoric acid or a base solution such as sodium hydroxide.

As shown in FIG. 2B, the carbon nanotubes 204 filling the pores 203 of the alumina nanoframes 200 are grown.

Here, before the carbon nanotubes 204 are grown, a process of expanding the pores 203 of the alumina nanoframe 200 is performed.

In order to expand the pores 203 of the alumina nano frame 200, there is a method of treating the alumina nano frame 200 with a base solution. That is, the alumina nano templates 200 are immersed in a base solution such as NaOH or KOH for about 1 minute.

By expanding the pores 203 of the alumina nanoframe 200 soaked in a base solution, the diameter of the pores 203 is expanded to allow gas to smoothly enter the pores 203 when the multi-walled carbon nanotubes 204 are grown. Therefore, the growth of the multi-walled carbon nanotubes 204 is promoted.

The expansion process of the pores 203 may be performed before the particles precipitated in the pores 203 are reduced with hydrogen gas or may be expanded after the reduction.

In the present invention, a multi-walled carbon nanotube 204 is grown by performing a thermal chemical vapor deposition process.

The growth of the multi-walled carbon nanotubes 204 fills the pores 203 using the alumina 202 of the alumina nano-frame 200 as a catalyst without forming a separate catalyst metal in the pores 203. By growing the wall carbon nanotubes 204, the multi-walled carbon nanotubes 204 are synthesized in the alumina nano-frame 200. As such, since the catalyst metal does not need to be formed separately, the manufacturing process is simple, and since the alumina 202 is used as a catalyst, the multi-walled carbon nanotubes 204 can be uniformly synthesized in the pores 203.

Figure 3 is a SEM photograph of the multi-walled carbon nanotubes synthesized in the alumina nano-frame according to an embodiment of the present invention, the diameter of the multi-walled carbon nanotubes is 40nm, the length was measured to 40㎛.

As shown in FIG. 3, multi-walled carbon nanotube arrays are densely and vertically aligned by synthesizing multi-walled carbon nanotubes using AAO technology.

After synthesizing the multi-walled carbon nanotubes 204 to the alumina nano-frame 200 by the above-described series of processes, after removing the aluminum thin plate 201 in the lower portion of the alumina nano-frame 200, the bonding process as follows Proceed with the Bonding process.

4 is a view illustrating a bonding process according to an embodiment of the present invention, the present invention is a silicon substrate 100 is a multi-walled carbon nanotube 204 in an alumina nano-frame (Al ₂ O ₃ -template, 200) Bonding is performed using a wafer bonding process in order to fabricate an ECIS system by coupling to a laminated structure of the silicon oxide film 101.

In the bonding process, the surface of the silicon oxide film 101 is subjected to a surface treatment process for making a hydrophilic surface and subjected to mechanical pressure for 3 hours and heat at 250 ° C. in a vacuum to heat the alumina nano-frame 200 and the silicon oxide film 101. It consists of a post anneal process of bonding. As such, when the wafer bonding process is performed in two stages of the surface treatment process and the post-heat treatment process, the quality of the bonding may be improved by excellent surface roughness and cleanliness of the surface.

A cross-sectional photograph of the surface of the bonding process as described above is shown in FIG. 5.

5 is a SEM photograph after the bonding process of the alumina nano-frame / silicon oxide film / silicon substrate according to an embodiment of the present invention.

As described above, the characteristics of the ECIS system manufactured through alumina nanoframe fabrication, multi-wall carbon nanotube synthesis, and bonding process are measured by an impedance analyzer (HP4194A Impedance Analyzer).

FIG. 6 and FIG. 7 are graphs showing the results of a capacitance-voltage (CV) measurement of an ECIS system according to an embodiment of the present invention. FIG. 6 is a test area A measured at 9 mm ² , and FIG. 7 is a test. It measures by making area A into 1 mm <^2> . 6 and 7, the horizontal axis represents the reference electrode bias applied to the reference electrode, and the vertical axis represents the capacitance value measured in the ECIS system.

As shown in FIG. 6, when the reference electrode bias is applied to the reference electrode 106 at 1 MHz, the capacitance shows a value of 0 in both the negative bias and the plus bias, and the negative bias when the reference electrode is applied at 1 kHz. Shows a value of 4.0nF, but rapidly decreases above 0V to 1.0nF.

When the bias is applied to the reference electrode 106 at 100 Hz, the capacitance shows a value of 7.0 nF in the negative bias, but rapidly decreases above 0 V to show a value of 1.0 nF.

As shown in FIG. 7, when the reference electrode bias is applied to the reference electrode 106 at 1 MHz, the capacitance shows a value of 0. When the reference electrode bias is applied at 1 kHz, a value of 2.0 nF is shown at the negative bias. It is rapidly decreased to 0nV and shows the value of 0.5nF level.

When the bias is applied to the reference electrode 106 at 100 Hz, the capacitance shows a value of 5.5 nF at the negative bias, but rapidly decreases to 0 nF at 0 V or more.

6 and 7 as described above, it can be seen that the surface potential at the silicon substrate 100 is adjusted at a specific voltage (the bias applied to the reference electrode is 0V), which is an electrolyte solution (105) It is shown that it can operate as a good performance liquid gate.

From these characteristics it can be confirmed that the ECIS system of the present invention can be applied as a chemical / biological sensor device. Moreover, the open end of the multi-walled carbon nanotubes 103 has many active sites that can bind various molecules or compounds. Therefore, any charged particles can change the surface potential of the surface of the silicon substrate 100 while binding to the active site of the multi-walled carbon nanotubes 103. The capacitance of the entire system is a combination of a double layer (alumina nanoframe and electrolyte) capacitance on the surface of the reference electrode 106 and the capacitance of the silicon oxide film 101 or the depletion capacitance of the silicon substrate 100 in series. It consists of. Here, the resistance of the electrolyte solution 105 and the semiconductor substrate 100 is negligible.

6 and 7 show that the total capacitance is not proportional to the surface area (test area). This is seen as the effect of the double layer capacitance on the surface of the reference electrode 106.

That is, the double layer capacitance of the reference electrode 106 is always the same under the same frequency condition.

Surface modulation confirms that the structure can act as a field effect transistor by forming the source region (S) and the drain region (D) through an appropriate post process. Typically, it is known that the capacitance of the oxide film is not affected by the frequency change.

However, the experimental results of FIGS. 6 and 7 show that the frequency change is affected. In other words, the frequency dependence of double-layer capacitance is considered in order to clarify the frequency influence at 1MHz high frequency.

In the first embodiment described above, the structure in which the silicon oxide film 101 and the silicon substrate 100 are positioned under the alumina nano-frame 102 on which the multi-walled carbon nanotubes 103 are synthesized has been described. Various structures are possible under the alumina nanostructure in which wall carbon nanotubes are synthesized.

8 is a view showing an ECIS system using carbon nanotubes according to a second embodiment of the present invention.

As shown in FIG. 8, the silicon substrate 301 into which the p-type or n-type impurity is implanted, the silicon oxide films SiO ₂ and 302 on the silicon substrate 301, and the polysilicon layer 303 on the silicon oxide film 302. , Alumina nanoframe 304 synthesized with multi-walled carbon nanotubes (MWCNT) 305 on the polysilicon layer 303, a cover layer 306 on the alumina nanoframe 304, and a cover layer 306 An electrolyte solution (Electrolyte, 307) filling the open area (sensor area) to provide, and a reference electrode 308 for fixing the potential of the electrolyte solution (307). Here, a source region S and a drain region D in which p-type or n-type impurities are implanted are provided in the silicon substrate 301 outside the alumina nanoframe 304.

In FIG. 8, the cover layer 306 applies any one selected from a photoresist, an insulating layer, and a polymer, and preferably, a photoresist is used.

In addition, the electrolyte solution 307 may be any one selected from a potassium chloride (KCl) solution, a sodium chloride (NaCl) solution, or a diluted dilute sulfuric acid (diluted H ₂ SO ₄ ) solution at a concentration of 3.3 mol (M).

The reference electrode 308 is formed of platinum or Ag / AgCl.

In the impurities implanted into the silicon substrate 301, the source region S, and the drain region D, the p-type impurity is boron-based and the n-type impurity is phosphorus (P) or arsenic (As). .

9 is a view showing an ECIS system using carbon nanotubes according to a third embodiment of the present invention.

As shown in FIG. 9, a cover layer on the alumina nanoframe 402 and the alumina nanoframe 402 having a structure in which a pn junction 401, a multi-walled carbon nanotube (MWCNT) 403 on the pn junction 401 is embedded (Cover layer 404), an electrolyte solution (Electrolyte 405) to fill the open area (sensor area) provided by the cover layer 404, and a reference electrode 406 for fixing the potential of the electrolyte solution 405. . Here, the pn junction 401 is a p-type junction layer 401a doped with p-type impurities and an n-type junction layer 401b doped with n-type impurities.

In FIG. 9, the cover layer 404 applies any one selected from a photoresist, an insulating layer, and a polymer, and preferably, a photoresist is used.

In addition, the electrolyte solution 405 is any one selected from potassium chloride (KCl) solution, sodium chloride (NaCl) solution or dilute diluted sulfuric acid (diluted H ₂ SO ₄ ) solution of 3.3 mol (M) concentration.

The reference electrode 406 is formed of platinum or Ag / AgCl.

The p-type impurity injected into the p-type bonding layer 401a is boron-based, and the n-type impurity injected into the n-type bonding layer 401b is phosphorus (P) or arsenic (As).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

ECIS system produced through the alumina nano-frame fabrication, multi-walled carbon nanotube synthesis and bonding process of the present invention as described above has the effect that can be applied as a chemical / biological sensor.

In addition, the present invention can utilize the high sensitivity of the nano-structure by functionalizing the ends of the multi-walled carbon nanotubes having a high reactivity has the effect of implementing a chemical / biological sensor with excellent performance.

Claims (32)

Substrate layer; An alumina nanoframe bonded on the substrate layer and having a plurality of pores; Multi-walled carbon nanotubes filling the pores; And Electrolyte solution covering the alumina nanoframe while in contact with the multi-walled carbon nanotubes Carbon nanotube insulator semiconductor system for a chemical / biological sensor comprising a. The method of claim 1, A cover layer covering an edge of the alumina nanoframe and opening a central portion of the alumina nanoframe-a sensor region; The electrolyte solution is a carbon nanotube insulator semiconductor system for the chemical / biological sensor, characterized in that in contact with the multi-walled carbon nanotubes exposed in the sensor region. The method of claim 2, The cover layer, Carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that any one selected from photoresist, insulating layer or polymer. The method of claim 1, The surface of the substrate layer is a carbon nanotube insulator semiconductor system for the chemical / biological sensor, characterized in that connected via the alumina nano-frame and wafer bonding. The method of claim 1, The substrate layer, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, comprising a structure in which impurities are doped with a silicon substrate and an insulating layer. The method of claim 5, The silicon substrate is a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that doped with p-type impurities or n-type impurities. The method of claim 5, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that a source region and a drain region are provided in the silicon substrate outside the alumina nanoframe. The method of claim 5, The insulating layer, Carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that the silicon oxide film. The method of claim 1, The substrate layer, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, comprising a structure in which impurities are doped with a silicon substrate, an insulating layer, and polysilicon. 10. The method of claim 9, The silicon substrate, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, wherein the p-type impurity or the n-type impurity is doped. 10. The method of claim 9, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that a source region and a drain region are provided in the silicon substrate outside the alumina nanoframe. 10. The method of claim 9, The insulating layer, Carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that the silicon oxide film. The method of claim 1, The substrate layer, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that it is a pn junction. The method according to any one of claims 1 to 13, The electrolyte solution, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, using any one selected from potassium chloride (KCl) solution, sodium chloride (NaCl) solution, or diluted dilute sulfuric acid (diluted H ₂ SO ₄ ) solution. The method of claim 14, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that a reference electrode for fixing the potential of the electrolyte solution is connected to the electrolyte solution. The method of claim 15, The reference electrode, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that it is platinum or Ag / AgCl. Preparing a substrate layer; Forming an alumina nanoframe having a plurality of pores; Growing multi-walled carbon nanotubes filling the pores by using the surface of the alumina nanoframe as a catalyst; Bonding a lower region of the alumina nano-frame on which the multi-walled carbon nanotubes are grown with the surface of the substrate layer; Forming a cover layer to open a sensor region on an upper region of the alumina nanoframe to which the multi-walled carbon nanotubes are exposed; And Forming an electrolyte solution on the cover layer to contact the multi-walled carbon nanotubes opened in the sensor region; Method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor comprising a. The method of claim 17, Forming the alumina nano-frame having a plurality of pores proceeds through a two-step anodization, Further comprising expanding the area of the pores Method of manufacturing carbon nanotube insulator semiconductor system for chemical / biological sensor. The method of claim 18, Forming the multi-walled carbon nanotubes, A method for producing a carbon nanotube insulator semiconductor system for chemical / biological sensors that proceeds by thermal CVD. The method of claim 17, The bonding step, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that it proceeds in the order of surface treatment and post-heat treatment for making a hydrophilic surface. The method of claim 17, The substrate layer, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that the impurity-doped silicon substrate and the insulating layer laminated in the order. The method of claim 21, The silicon substrate is a method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that doped with p-type impurities or n-type impurities. The method of claim 21, A method for manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that a source region and a drain region are provided in the silicon substrate outside the alumina nanoframe. The method of claim 21, The insulating layer, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that the silicon oxide film is formed. The method of claim 17, The substrate layer, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, wherein the impurity is doped with a silicon substrate, an insulating layer, and a polysilicon. The method of claim 25, The silicon substrate, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, wherein the p-type impurity or the n-type impurity is doped. The method of claim 25, A method for manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that a source region and a drain region are provided in the silicon substrate outside the alumina nanoframe. The method of claim 25, The insulating layer, A method for producing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that the silicon oxide film. The method of claim 17, The substrate layer, A method for producing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that it is a pn junction. The method according to any one of claims 17 to 29, wherein The electrolyte solution, A carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized by using any one selected from potassium chloride (KCl) solution, sodium chloride (NaCl) solution, or diluted dilute sulfuric acid (diluted H ₂ SO ₄ ) solution. Manufacturing method. 31. The method of claim 30, A reference electrode for fixing the potential of the electrolyte solution is connected to the electrolyte solution, the method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor. 31. The method of claim 30, The cover layer, A method of manufacturing a carbon nanotube insulator semiconductor system for a chemical / biological sensor, characterized in that formed by any one selected from a photoresist, an insulating layer or a polymer.

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