KR101010667B1 - Probe bonding unit, method for manufacturing probe bonding unit and probe bonding method using probe bonding unit - Google Patents

Abstract

The probe bonding unit includes a probe including a beam portion extending in a first direction and a contact portion extending in a second direction from one end of the beam portion, and a plate portion spaced apart from the beam portion with the contact portion therebetween, from the plate portion. A contact part forming part extending in the direction of the contact part to surround the contact part, the beam part supporting part extending from the plate part toward the other end of the beam part to support the beam part, and the beam part, the plate part, the contact part forming part, and the beam part supporting part And a probe forming plate including a space portion to be formed.

Probe, space part

Description

PROBE BONDING UNIT AND MANUFACTURING METHOD OF PROBE BONDING UNIT, AND PROBE BONDING METHOD USING PROBE BONDING UNIT}

The present invention relates to a probe bonding unit, and more particularly, a probe bonding unit for manufacturing a probe card for inspecting a test object such as a semiconductor wafer, a method for manufacturing a probe bonding unit, and a probe using a probe bonding unit. It relates to a bonding method.

In general, semiconductor devices have a fabrication process of forming contact pads for circuit patterns and inspections on a wafer, and an assembly process of assembling wafers having circuit patterns and contact pads into respective semiconductor chips. It is manufactured through.

An inspection process is performed between the fabrication process and the assembly process to inspect the electrical characteristics of the wafer by applying an electrical signal to the contact pads formed on the wafer. This inspection process is performed to inspect a defect of a wafer and to remove a portion of a wafer in which a defect occurs during an assembly process.

In the inspection process, inspection equipment called a tester for applying an electrical signal to a wafer and probe equipment for performing an interface function between the wafer and the tester are mainly used. Among them, the probe card includes a printed circuit board that receives an electrical signal applied from a tester and a plurality of probes in contact with contact pads formed on the wafer.

In recent years, as the demand for high integrated chips increases, circuit patterns formed on the wafer by the fabrication process and contact pads connected with the circuit patterns are highly integrated. That is, the spacing between neighboring contact pads is very narrow, and the size of the contact pad itself is also finely formed. As a result, since the probe of the probe card used in the inspection process must be in contact with the contact pad, the distance between neighboring probes corresponding to the contact pad must be formed very narrowly, and the size of the probe itself must also be finely formed.

Hereinafter, a method of manufacturing a conventional probe card will be described with reference to FIGS. 1 to 3.

1 to 3 are cross-sectional views for explaining a method of manufacturing a conventional probe card.

First, as shown in FIG. 1, an opening 11 is formed in a sacrificial substrate 10 using photolithography technology, and a probe 20 is formed by filling a conductive material in the opening 11.

Next, as shown in FIG. 2, each probe 20 is bonded to the interconnection element 40 formed on the substrate pad 31 of the printed circuit board 30 by using a bonding tool such as a laser. The probe card is complete.

In the conventional method of manufacturing a probe card as described above, the respective probes 20 are bonded to the circuit patterns 31 formed on the substrate 30, thereby increasing the time for bonding the respective probes 20. This increases the manufacturing time and manufacturing cost.

Hereinafter, another conventional method of manufacturing a probe card for solving the above problems will be described.

First, as shown in FIG. 1, an opening 11 is formed in a sacrificial substrate 10 using photolithography technology, and a probe 20 is formed by filling a conductive material in the opening 11.

Next, as shown in FIG. 3, the probe 20 formed on the sacrificial substrate 10 is bonded to the interconnect element 40 formed on the circuit pattern 31 of the printed circuit board 30.

Next, as shown in FIG. 2, the probe card is completed by separating the sacrificial substrate 10 from the probe 20.

As described above, another conventional method of manufacturing a probe card uses a photolithography technique used to form a pattern of a semiconductor, so that the size of the probe 20 itself can be finely formed, and the interval between neighboring probes 20 can be achieved. It can also be formed in the printed circuit board 30 very narrowly.

However, the manufacturing method of the conventional probe card as described above and the manufacturing method of another conventional probe card include a beam portion 21 in which the probe 20 extends in one direction and a contact portion 22 having a truncated pyramid shape. Since it is a cantilever type, at least three etching processes must be performed on the sacrificial substrate 10 to form the opening 11 in which the probe 20 is formed. This acts as a factor of the increase in manufacturing time and manufacturing cost.

In addition, the manufacturing method of the conventional probe card and the manufacturing method of the other conventional probe card are heat from the process of forming the probe 20 to the sacrificial substrate 10 to the process of separating the sacrificial substrate 10 from the probe 20. It is essential to use, due to the difference in thermal expansion coefficient between the heat and the sacrificial substrate 10 and the probe 20, there was a problem that the deformation such as the probe 20 is distorted during the process. In particular, the above problems are mainly caused in the beam part 21 extending in one direction of the probe 20.

In addition, a conventional method of manufacturing a probe card and another method of manufacturing a conventional probe card, when separating the sacrificial substrate 10 from the probe 20, the lower side of the beam portion 21 and the contact portion 22 of the probe 20 Since the whole is in contact with the sacrificial substrate 10, there is a problem that the process time for separating the sacrificial substrate 10 from the probe 20 takes a long time.

One embodiment of the present invention is to solve the above-described problems, a method of manufacturing a probe bonding unit, a probe bonding unit that can reduce the number of etching process for the sacrificial substrate to reduce the manufacturing time and manufacturing cost and An object of the present invention is to provide a probe bonding method using a probe bonding unit.

Another object of the present invention is to provide a probe bonding unit capable of suppressing deformation of a probe due to heat during a process, a method of manufacturing a probe bonding unit, and a probe bonding method using a probe bonding unit.

Another object of the present invention is to provide a probe bonding unit, a method of manufacturing a probe bonding unit, and a probe bonding method using a probe bonding unit, which can shorten a process time for separating a sacrificial substrate from a probe.

As a technical means for achieving the above technical problem, the first aspect of the present invention is a probe bonding unit, the beam portion extending in the first direction and the contact portion extending in the second direction from one end of the beam portion A plate portion spaced apart from the beam portion with the probe and the contact portion interposed therebetween, a contact portion forming portion extending from the plate portion toward the contact portion to surround the contact portion, and extending from the plate portion toward the other end direction of the beam portion; Provided is a probe bonding unit comprising a probe forming plate including a beam portion support portion to support and the space formed by the beam portion, the plate portion, the contact portion forming portion, and the beam portion support portion.

The contact portion extends from the one end of the beam portion to have a first extension having a first width, a second extension extending from the first extension and having a second width narrower than the first width, and the second extension It may include a tip portion extending from the portion having a third width narrower than the second width.

The contact part forming part may include a tip part forming part corresponding to the tip part, a second extension part forming part corresponding to the second extension part, and a first extension part forming part corresponding to the first extension part.

The beam portion may be narrower in width from the other end toward the one end.

The width of the space portion may be wider than the width of the beam portion.

The probe may further include a connection part extending in a direction opposite to the contact part from the other end of the beam part.

The probe may further include a paste part disposed at an end portion of the connection part facing the beam part.

In addition, the second aspect of the present invention is a method of manufacturing a probe bonding unit comprising a probe having a beam portion extending in a first direction and a contact portion extending in a second direction from one end of the beam portion, (a (B) a plate portion recessed from the surface of the substrate corresponding to the beam portion, a beam portion support portion extending from the plate portion in the direction of the surface of the substrate, and formed by the plate portion and the beam portion support portion. Forming a space portion, (c) filling a first conductive material in the space portion, (d) forming a contact portion formation portion recessed from a surface of the substrate adjacent to the space portion corresponding to the contact portion to form the plate portion And forming a probe forming plate including the beam part support part, the space part and the contact part forming part, (e) the pro Forming a beam part photoresist pattern including a beam part opening corresponding to the beam part on the groove forming plate; (f) filling the beam part opening part and the contact part forming part with a second conductive material to form the beam part and the contact part; And (g) removing the first conductive material from the space part.

The contact portion extends from the one end of the beam portion to have a first extension having a first width, a second extension extending from the first extension and having a second width narrower than the first width, and the second extension And a tip portion extending from the portion and having a third width narrower than the second width, wherein step (d) includes a first thin film including a first opening portion having the third width corresponding to the tip portion on the substrate. Forming a pattern, forming a second thin film pattern on the first thin film pattern, the second thin film pattern including a second opening having the second width corresponding to the second extension part; Forming a third thin film pattern including a third opening having a first width corresponding to a first extension and in the form of the first thin film pattern, the second thin film pattern and the third thin film pattern And forming a contact portion including a tip portion forming portion corresponding to the tip portion, a second extension portion forming portion corresponding to the second extension portion, and a first extension portion forming portion corresponding to the first extension portion by dry etching the substrate. Forming a portion.

The step (e) may be performed such that the width of the beam opening becomes narrower from one portion corresponding to the other end of the beam portion to the other portion corresponding to the one end of the beam portion.

The step (e) may be performed such that the width of the opening of the beam part is smaller than the width of the space part.

The probe further comprises a connecting portion extending from the other end of the beam portion in the opposite direction to the contact portion, forming a connecting portion photoresist pattern including a connecting portion opening portion corresponding to the connecting portion on the beam portion and the connecting portion opening portion. The method may further include filling the third conductive material into the connection part.

The method may further include forming a paste part on the connection part.

According to a third aspect of the present invention, there is provided a probe bonding method using a probe bonding unit, comprising: (a) providing a printed circuit board on which a substrate pad is formed, (b) a beam portion extending in a first direction; A probe including a contact portion extending from one end of the beam portion in a second direction and a plate portion spaced apart from the beam portion with the contact portion therebetween, a contact portion forming portion extending from the plate portion in the direction of the contact portion to surround the contact portion; And a probe forming plate including a beam part support part extending from the plate part toward the other end of the beam part to support the beam part, and a space part formed by the beam part, the plate part, the contact part forming part, and the beam part support part. Manufacturing a bonding unit, (c) connecting the probe to the substrate pad of a printed circuit board Step and (d) a probe bonding method comprising the step of separating the probe from the formation plate probe.

The probe may further include a connection part extending from the other end of the beam part in the opposite direction to the contact part, and step (c) may be performed by corresponding the connection part to the substrate pad.

The probe may further include a paste part positioned at an end portion of the connection part facing the beam part, and step (c) may be performed by applying heat or laser to the paste part.

According to one of the above-described problem solving means of the present invention, by forming a contact forming portion using a plurality of thin film patterns, there is a technical effect that the manufacturing time and manufacturing cost is reduced by reducing the number of etching process for the substrate.

In addition, since the probe bonding unit includes a space portion, there is a technical effect that deformation of the probe due to heat during the process is suppressed.

In addition, since the probe bonding unit includes a space portion, there is a technical effect that the process time for separating the probe forming plate from the probe is shortened.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Throughout the specification, when a member is located “on” another member, this includes not only when one member is in contact with another member but also when another member exists between the two members. In addition, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless otherwise stated.

Hereinafter, a probe bonding unit according to an embodiment of the present invention will be described with reference to FIGS. 4 to 6.

4 is a perspective view of a probe bonding unit according to an embodiment of the present invention, FIG. 5 is a plan view of a probe bonding unit according to an embodiment of the present invention, and FIG. 6 is VI-VI of FIGS. 4 and 5. The cross section along the.

4 to 6, the probe bonding unit 1000 according to the exemplary embodiment of the present invention includes a probe 100 and a probe forming plate 200.

The probe 100 includes a beam part 110, a contact part 120, a connection part 130, and a paste part 140.

The beam unit 110 extends in the first direction and includes one end 111 and the other end 112. The beam part 110 is formed in a form in which the width becomes narrower from the other end 112 to the one end 111. One end 111 of the beam part 110 extends from one end 111 of the beam part 110 in the direction of the probe forming plate 200 in the second direction, and the other end of the beam part 110. The connection part 130 extends from the other end 112 of the beam part 110 in the direction opposite to the extension direction of the contact part 120. The extending direction of the first direction and the extending direction of the second direction are directions crossing each other.

The contact part 120 extends from one end 111 of the beam part 110, and includes a first extension part 121, a second extension part 122, and a tip part 123. The contact portion 120 serves to contact the contact pads formed on the inspected object such as a semiconductor wafer during the inspection process.

The first extension part 121 extends from one end 111 of the beam part 110 and has a first width W '. The second extension part 122 extends from the first extension part 121 and has a second width W2 narrower than the first width W \ of the first extension part 121. The tip portion 123 extends from the second extension portion 122 and has a third width W₃ narrower than the second width W2 of the second extension portion 122. That is, the contact portion 120 has a form in which the width is gradually narrowed from the first extension portion 121 to the tip portion 123.

In another embodiment, the contact portion 120 may further include third to Nth extensions.

The beam part 110 and the contact part 120 include a second conductive material having elasticity such as nickel (Ni) or nickel alloy (Ni alloy).

The connection part 130 extends from the other end 112 of the beam part 110 in the direction opposite to the extension direction of the contact part 120. The connection part 130 includes a third conductive material having elasticity such as nickel or a nickel alloy. The second conductive material constituting the beam part 110 and the contact part 120 and the third conductive material constituting the connection part 130 may be the same conductive material or different conductive materials. The paste part 140 is positioned at the end of the connection part 130.

The paste part 140 is positioned on the end of the connection part 130 to face the other end 112 of the beam part 110 with the connection part 130 interposed therebetween. The paste portion 140 is made of a conductive paste.

The probe forming plate 200 supports the probe 100 and includes a plate portion 210, a contact portion forming portion 220, a beam portion supporting portion 230, and a space portion 240.

The plate portion 210 is spaced apart from the beam portion 110 with the contact portion 120 interposed therebetween, and extends in a plate shape in a direction parallel to the extending direction of the beam portion 110. The contact part forming part 220 extends from the plate part 210 toward the contact part 120.

The contact part forming part 220 surrounds the contact part 120 and includes a tip part forming part 221, a second extension part forming part 222, and a first extension part forming part 223. The tip portion forming portion 221 is formed in a form corresponding to the tip portion 123, the second extension portion forming portion 222 is formed in a form corresponding to the second extension portion 122, the first extension portion The forming portion 223 is formed in a form corresponding to the first extension portion 121. That is, the contact portion 120 is formed in the tip portion forming portion 221 to the first extension portion forming portion 223, and the contact portion 120 is formed according to the shape of the tip portion forming portion 221 to the first extension portion forming portion 223. ) Is determined.

In another embodiment, when the contact portion 120 includes the third to Nth extensions, the contact forming portion 220 includes the third extension forming portion to the Nth extension forming portion.

The beam part supporter 230 is spaced apart from the contact part forming part 220 with the space part 240 interposed therebetween, and extends from the plate part 210 toward the other end 112 of the beam part 110 to support the beam part 110. I support it. The beam part 110 is in the form of a partition wall extending from the plate part 210.

The space part 240 is surrounded by the beam part 110, the plate part 210, the contact part forming part 220 and the beam part supporting part 230, and at the same time, the beam part 110, the plate part 210, the contact part forming part 220, and The space formed by the beam support 230. As shown in FIGS. 4 and 5, the width of the space 240 is wider than the width of the beam 110, whereby the beam 110 corresponding to the space 240 is floating. It is.

Hereinafter, a probe bonding method using a probe bonding unit according to an exemplary embodiment of the present invention will be described with reference to FIGS. 7 to 9.

7 is a flowchart illustrating a probe bonding method using a probe bonding unit according to an embodiment of the present invention, and FIGS. 8 and 9 illustrate a probe bonding method using a probe bonding unit according to an embodiment of the present invention. It is sectional drawing for doing.

First, as shown in FIGS. 7 and 8, a printed circuit board 2000 is provided (S100).

Specifically, the printed circuit board 2000 including the substrate pad 2100 is formed. The printed circuit board 2000 may be a probe substrate on which a probe circuit pattern (not shown) is formed or a space converter including a multi layer ceramic substrate (MLC) that performs a pitch conversion function. transformer).

Next, a probe bonding unit 1000 is manufactured (S200).

Specifically, the probe bonding unit 1000 including the probe 100 and the probe forming plate 200 is manufactured. A more specific method of manufacturing the probe bonding unit 1000 will be described later.

Next, the probe 100 is connected to the printed circuit board 2000 (S300).

Specifically, the alignment unit 130 of the probe 100 of the probe bonding unit 1000 is aligned on the substrate pad 2100 of the printed circuit board 2000, and then, the substrate pad 2100 and the connection unit 130 are interposed therebetween. The connecting portion 130 is connected to the substrate pad 2100 by applying a laser or heat to the paste portion 140 positioned at the substrate 140.

When the connection part 130 is connected to the substrate pad 2100 by applying heat to the paste part 140, since the beam part 110 corresponding to the space part 240 is floated, the heat and probe forming plate 200 and Due to the difference in the coefficient of thermal expansion between the probes 100, deformation such as twisting of the probes 100 does not occur during the process.

Next, as shown in FIG. 9, the probe forming plate 200 is separated from the probe 100 (S400).

Specifically, the probe forming plate 200 is separated from the probe 100 by using a wet etching process.

When the probe forming plate 200 is separated from the probe 100, the probe forming plate 200 contacts and supports only the contact portion 120 of the probe 100 and the other end 112 of the probe 100. Compared with the case where the entire lower side of the probe 100 is in contact with the sacrificial substrate, the process time for separating the probe forming plate 200 from the probe 100 is shortened.

The probe 100 is connected to the printed circuit board 2000 by the above process.

Hereinafter, a method of manufacturing a probe bonding unit according to an embodiment of the present invention will be described with reference to FIGS. 10 to 20.

10 is a flowchart illustrating a method of manufacturing a probe bonding unit according to an embodiment of the present invention, and FIGS. 11 to 20 are views illustrating a method of manufacturing a probe bonding unit according to an embodiment of the present invention.

First, as shown in FIGS. 10 and 11, a substrate 610 is prepared (S210).

Specifically, a substrate 610 made of a plate-like insulating material such as a silicon wafer is provided. The upper surface and the lower surface of the substrate 610 may be formed flat using a mechanical or chemical polishing process.

Next, as shown in FIGS. 11 and 12, the plate 210, the beam support 230, and the space 240 are formed (S220).

Specifically, as shown in FIG. 11, when light is received on the substrate 610 by using a spin coating process or a coating process, the positive type may be dissolved in a developer during the development process, or may not be lighted. A substrate photoresist layer formed of a negative photoresist material that is soluble in a developer during the development process is formed.

Next, the mask having the image corresponding to the space portion 240 and the beam support 230 to be formed later on the substrate photoresist layer is aligned, and the substrate photoresist is irradiated with ultraviolet rays or the like through the mask. After exposing the layer, the exposed substrate photoresist layer is developed using a developer to form a substrate photoresist pattern 620 having a space portion opening 621 in which a portion to be manufactured is opened. .

Next, as shown in FIG. 12, the substrate 610 is etched using a dry etching process or a wet etching process using the substrate photoresist pattern 620 as a mask. Surface direction of the substrate 610 from the plate portion 210 and the plate portion 210 recessed from the surface of the substrate 610 corresponding to the beam portion 110 of the probe 100 to be formed later by etching the substrate 610 The space part 240 formed by the beam part support part 230 and the plate part 210 and the beam part support part 230 extending to the end is formed.

Next, as shown in FIG. 13, the first conductive material 630 is filled in the space 240 (S230).

In detail, a conductive layer is formed on the substrate 610 exposed to the outside, and a plating process such as an electrolytic plating process using the formed conductive layer is used, or an open mask having an open pattern corresponding to the space 240 is formed. The first conductive material 630 is filled in the space 240 using the sputtering process. When the first conductive material 630 is filled in the space part 240 using the conductive layer, when the first conductive material 630 protrudes onto the substrate 610 due to the plating process, the first conductive material 630 protrudes onto the substrate 610. The protruding first conductive material 630 is polished using a chemical or physical polishing process.

Next, as illustrated in FIGS. 14 and 15, the contact forming part 220 is formed to form the probe forming plate 200 (S240).

Specifically, as shown in FIG. 14, first, a first thin film is formed on the substrate 610 by using a spin coating or sputtering process, and then a first opening 641 to be formed later on the first thin film. The mask having the corresponding image is aligned, and the first thin film is etched using the mask to form a first thin film pattern 640 including a first opening 641 having a third width W₃.

Next, after forming a second thin film by using a spin coating or sputtering process on the first thin film pattern 640 or by oxidizing a portion of the first thin film pattern 640, the second second film to be formed later on the second thin film Aligning a mask having an image corresponding to the opening 651 and etching the second thin film using the mask, the second thin film pattern 650 including the second opening 651 having a second width W2 may be formed. Form.

Next, after forming the third thin film photoresist layer on the second thin film pattern 650 by using a spin coating or coating process, the third thin film photoresist layer has an image corresponding to the third opening 661. The mask is aligned, and the third thin film photoresist layer is exposed and developed to form a third thin film pattern 660 including a third opening 661 having a first width W ′.

Next, as shown in FIG. 15, the substrate 610 is etched according to the shape of the third thin film pattern 660, the second thin film pattern 650, and the third thin film pattern 660 by using a dry etching process. The first extension part forming part 223, the second extension part forming part 222, and the tip part forming part 221 respectively corresponding to the third opening 661, the second opening part 651, and the first opening part 641, respectively. To form a contact forming portion 220 comprising a. As a result, the probe forming plate 200 including the plate part 210, the contact part forming part 220, the beam part supporting part 230, and the space part 240 is formed.

In another embodiment, after forming a photoresist layer on the substrate 610, corresponding to the first opening 641, the second opening 651, and the third opening 661 to be formed later on the photoresist layer. After aligning a slit mask or a semi-transparent mask having an image, exposing a photoresist layer by irradiating ultraviolet rays or the like to the photoresist layer through the mask, and developing the photoresist layer using a developer, the first opening ( 641, a second opening 651, and a third opening 661 may be formed. Thereafter, the substrate 610 is etched according to the shape of the photoresist pattern to form a contact portion including a first extension portion forming portion 223, a second extension portion forming portion 222, and a tip portion forming portion 221 ( 220).

Next, as shown in FIGS. 16 and 17, the beam part photoresist pattern 680 is formed (S250).

17 is a plan view of FIG. 16.

Specifically, after the beam portion conductive layer 670 is formed on the probe forming plate 200, the beam portion photoresist layer is formed on the beam portion conductive layer 670 using a spin coating or coating process, and the beam portion photoresist layer is formed on the beam portion conductive layer 670. After aligning a mask having an image corresponding to the beam portion 110 to be formed later, by irradiating the beam portion photoresist layer with ultraviolet rays through the mask to expose the beam portion photoresist layer and the exposed beam portion photo using a developer The resist layer is developed to form a beam portion photoresist pattern 680 including a beam portion opening 681 in which the contact portion 120 and the portion where the beam portion 110 is to be manufactured are opened.

As shown in FIG. 17, the beam part opening 681 of the beam part photoresist pattern 680 is a part corresponding to the beam part support part 230, which is a part corresponding to the other end 112 of the beam part 110 to be formed later. The width is narrower toward the portion corresponding to the contact portion forming portion 220 which is the other portion corresponding to the one end 111 of the beam portion 110 from. In addition, the width of the beam portion opening portion 681 is formed to be narrower than the width of the space portion 240. That is, the beam opening portion 681 is formed to be narrower than the width of the space portion 240 and at the same time, the width is narrower from one portion to the other portion.

Next, as shown in FIG. 18, the beam part 110 and the contact part 120 are formed (S260).

Specifically, the second conductive material 690 is filled in the beam part opening 681 and the contact part forming part 220 using a plating process such as an electrolytic plating process using the beam part conductive layer 670. When the second conductive material 690 protrudes onto the beam photoresist pattern 680 due to the plating process, the chemically or physical polishing process of the second conductive material 690 protruding onto the beam photoresist pattern 680 may be performed. Polishing is used to form the beam part 110 and the contact part 120.

When the beam part 110 is formed, a beam part 110 made of the second conductive material 690 is formed on the first conductive material 630 filled in the space 240. Since the difference in the coefficient of thermal expansion between the first conductive material 630 and the second conductive material 690 is smaller than the difference in the coefficient of thermal expansion between the conductive material and the insulating material, the heat and heat that can be used in the process of forming the beam portion 110 Due to the difference in the coefficient of thermal expansion between the first conductive material 630 and the second conductive material 690, deformation such as distortion of the beam unit 110 does not occur during the process.

Next, as shown in FIG. 19, the connection portion photoresist pattern 710 is formed (S270).

Specifically, after forming the connecting portion photoresist layer on the beam portion 110 by using a spin coating or coating process and aligning the mask having an image corresponding to the connecting portion 130 to be formed later on the connecting portion photoresist layer, The connection part opening part 711 in which the connection part photoresist layer is opened by exposing ultraviolet light to the connection part photoresist layer through a mask to expose the connection part photoresist layer and developing the exposed connection part photoresist layer using a developer. To form a connection photoresist pattern 710 comprising a.

Next, the connecting portion 130 is formed (S280).

Specifically, the connection part opening 711 and the third conductive material 720 are filled using a plating process such as an electrolytic plating process using the beam part conductive layer 670, the contact part 120, and the beam part 110. When the third conductive material 720 protrudes onto the connection photoresist pattern 710 due to the plating process, a chemical or physical polishing process is performed on the third conductive material 720 protruding onto the connection photoresist pattern 710. Polishing to form a connecting portion 130.

Next, the paste part 140 is formed (S290).

Specifically, the paste portion 140 made of the conductive paste material is formed at the end of the connection portion 130 using a screen printing process or the like.

Next, as shown in FIG. 20, the first conductive material 630 is removed from the space part (S295).

Specifically, when the connection portion photoresist pattern 710 and the beam portion photoresist pattern 680 are removed from the probe 100 by using an ashing process or a lift off process, the probe 100 and The beam conductive layer 670 is exposed to the outside. When the beam portion conductive layer 670 that is exposed to the outside is removed from the probe forming plate 200 by using a wet etching process, the space portion 240 is wider than the beam portion 110, so that the space portion 240 is positioned in the space portion 240. A portion of the first conductive material 630 is exposed to the outside. Subsequently, when the wet etching process is performed, a portion of the first conductive material 630 positioned in the space 240 is exposed to the outside, so that the first conductive material 630 is removed from the space 240. The space part 240 remains as a space formed by the plate part 210, the beam part 110, the contact part forming part 220, and the beam part supporting part 230.

By the above process, the probe bonding unit 1000 according to the exemplary embodiment of the present invention is manufactured.

As such, the probe bonding unit, the method for manufacturing the probe bonding unit, and the probe bonding method using the probe bonding unit according to the embodiment of the present invention may include the first thin film pattern 640, the second thin film pattern 650, and the like. By using the third thin film pattern 660 to form the contact forming part 220 using one dry etching process, the number of etching processes on the substrate 610 may be reduced.

In addition, when the probe bonding unit 1000 includes the space portion 240, when the probe forming plate 200 is separated from the probe 100, the probe forming plate 200 contacts the contact portion 120 of the probe 100. ) And the other end 112 of the probe 100 in contact with each other, so that the entire lower side of the probe 100 is in contact with the sacrificial substrate, so as to separate the probe forming plate 200 from the probe 100. Process time is shortened.

That is, the probe bonding unit, the probe bonding unit manufacturing method, and the probe bonding method using the probe bonding unit according to the exemplary embodiment may reduce the manufacturing time and manufacturing cost of the probe card.

In addition, the probe bonding unit, the method of manufacturing the probe bonding unit, and the probe bonding method using the probe bonding unit according to the embodiment of the present invention may be formed of the second conductive material 690 when the beam unit 110 is formed. The beam portion 110 formed is formed on the first conductive material 630 filled in the space portion 240 and having a small difference between the second conductive material 690 and the thermal expansion coefficient. As a result, the beam unit 110 may be distorted during the process due to a small difference in thermal expansion coefficient between the first conductive material 630 and the second conductive material 690 and the heat that may be used in the process of forming the beam unit 110. No deformation occurs.

In addition, when the connection part 130 is connected to the substrate pad 2100 by applying heat to the paste part 140, since the beam part 110 corresponding to the space part 240 is floating, the heat and probe forming plate ( Due to the difference in thermal expansion coefficient between the 200 and the probe 100, deformation such as the probe 100 is distorted during the process does not occur.

That is, in the probe bonding unit, the method for manufacturing the probe bonding unit, and the probe bonding method using the probe bonding unit according to the exemplary embodiment of the present invention, the probe bonding unit 1000 includes a space 240, Strain of the probe due to heat during the process is suppressed.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 to 3 are cross-sectional views for explaining a method of manufacturing a conventional probe card,

4 is a perspective view of a probe bonding unit according to an embodiment of the present invention;

5 is a plan view of a probe bonding unit according to an embodiment of the present invention;

6 is a cross-sectional view taken along VI-VI of FIGS. 4 and 5;

7 is a flowchart illustrating a probe bonding method using a probe bonding unit according to an exemplary embodiment of the present invention.

8 and 9 are cross-sectional views for explaining a probe bonding method using a probe bonding unit according to an embodiment of the present invention,

10 is a flowchart illustrating a method of manufacturing a probe bonding unit according to an embodiment of the present invention.

11 to 20 are views for explaining a method for manufacturing a probe bonding unit according to an embodiment of the present invention.

Claims (16)

In the unit for probe bonding, A probe including a beam portion extending in a first direction and a contact portion extending in a second direction from one end of the beam portion; A plate part spaced apart from the beam part with the contact part interposed therebetween, a contact part forming part extending from the plate part toward the contact part to surround the contact part, and a beam part support part extending from the plate part toward the other end of the beam part to support the beam part; And a space part formed by the beam part, the plate part, the contact part forming part, and the beam part supporting part. Probe bonding unit comprising a. The method of claim 1, The contact portion, A first extension extending from the one end of the beam portion and having a first width, A second extension extending from the first extension and having a second width narrower than the first width and A tip portion extending from the second extension and having a third width narrower than the second width Probe bonding unit comprising a. The method of claim 2, The contact portion forming unit, A tip portion forming portion corresponding to the tip portion, A second extension forming portion corresponding to the second extension; and A first extension portion forming portion corresponding to the first extension portion Probe bonding unit comprising a. The method of claim 1, And the beam portion is narrower in width from the other end toward the one end. The method of claim 1, And the width of the space portion is wider than the width of the beam portion. The method of claim 1, The probe, And a connection part extending from the other end of the beam part in a direction opposite to the contact part. The method of claim 6, The probe, Paste portion located at the end of the connecting portion facing the beam portion Probe bonding unit further comprising. In the manufacturing method of a probe bonding unit comprising a probe having a beam portion extending in a first direction and a contact portion extending in a second direction from one end of the beam portion, (a) preparing a substrate, (b) forming a plate portion recessed from the surface of the substrate corresponding to the beam portion, a beam portion support portion extending from the plate portion in the direction of the surface of the substrate, and a space portion formed by the plate portion and the beam portion support portion, (c) filling the space part with a first conductive material, (d) forming a contact forming portion recessed from a surface of the substrate adjacent to the space portion corresponding to the contact portion to form a probe forming plate including the plate portion, the beam portion supporting portion, the space portion, and the contact forming portion; step, (e) forming a beam part photoresist pattern including a beam part opening corresponding to the beam part on the probe forming plate; (f) filling the beam opening and the contact forming portion with a second conductive material to form the beam and the contact; and (g) removing the first conductive material from the space part Method for producing a unit for probe bonding comprising a. The method of claim 8, The contact portion extends from the one end of the beam portion to have a first extension having a first width, a second extension extending from the first extension and having a second width narrower than the first width, and the second extension A tip portion extending from the portion and having a third width narrower than the second width, In step (d), Forming a first thin film pattern on the substrate, the first thin film pattern including a first opening having a third width corresponding to the tip; Forming a second thin film pattern on the first thin film pattern, the second thin film pattern including a second opening having the second width corresponding to the second extension part; Forming a third thin film pattern on the second thin film pattern, the third thin film pattern including a third opening having the first width corresponding to the first extension part; and Dry etching the substrate according to the shape of the first thin film pattern, the second thin film pattern and the third thin film pattern, a tip part forming part corresponding to the tip part, and a second extension part forming part corresponding to the second extension part And forming a contact forming portion including a first extending forming portion corresponding to the first extending portion. Method for producing a unit for probe bonding comprising a. The method of claim 8, In step (e), And the beam opening is formed to be narrower in width from one portion corresponding to the other end of the beam portion to the other portion corresponding to the one end of the beam portion. The method of claim 8, In step (e), And a width of the beam part opening portion is smaller than that of the space part. The method of claim 8, The probe further includes a connecting portion extending in the opposite direction from the other end of the beam portion, the contact portion, Forming a connection photoresist pattern on the beam part including a connection part opening corresponding to the connection part; Forming a connection part by filling a third conductive material in the connection part opening part; Method of manufacturing a unit for probe bonding further comprising. 13. The method of claim 12, And forming a paste portion on the connection portion. In the probe bonding method using a probe bonding unit, (a) providing a printed circuit board having substrate pads formed thereon, (b) a probe including a beam portion extending in a first direction and a contact portion extending in one direction from one end of the beam portion and a plate portion spaced apart from the beam portion with the contact portion therebetween, the contact portion from the plate portion A contact part forming part extending in a direction and surrounding the contact part, the beam part supporting part extending from the plate part toward the other end of the beam part to support the beam part, and formed by the beam part, the plate part, the contact part forming part, and the beam part supporting part. Manufacturing a unit for probe bonding including a probe forming plate including a space, (c) connecting the probe to the substrate pad of a printed circuit board, and (d) separating the probe forming plate from the probe Probe bonding method comprising a. The method of claim 14, The probe, And a connection part extending from the other end of the beam part in a direction opposite to the contact part, Step (c) is, And performing the connection in correspondence with the substrate pad. The method of claim 15, The probe, Further comprising a paste portion located at the end of the connecting portion facing the beam portion, Step (c) is, The probe bonding method is performed by applying heat or laser to the paste portion.

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