KR101003448B1 - Micro Probe Device and Manufacturing Method Thereof - Google Patents

Abstract

The present invention relates to a micro-probe device and a method for manufacturing the same, and more particularly, to manufacturing a sharp probe, using a new method of performing a dry etching method and a wet etching method at the same time, a rectangular 4-terminal probe By fabricating, the electrical properties of the specimen as well as the plane can be measured.

In addition, the present invention relates to a micro-probe device and a method of manufacturing the same, by forming a heat-driven wiring for thermal driving in the cantilever and using each cantilever as a micro clamp.

Micro 4-Terminal Probe, Thermal Actuator, Micro Forceps

Description

Micro probe apparatus and there manufacturing method

The present invention relates to a four-terminal probe and a manufacturing method of a square structure integrated with a thermal actuator, a micro probe capable of measuring not only impurities or electrical properties present on the plane of the specimen, but also impurities and electrical properties on the curved surface of the specimen. It relates to an apparatus and a manufacturing method.

In addition, the present invention relates to a micro-probe device and a manufacturing method which can be applied to an ultra-small forceps by inserting a thermal drive wiring to enable thermal driving in a cantilever and driving each cantilever.

Four-terminal resistance measurement is the most widely used method for measuring the resistance of semiconductors, in particular the resistivity of a metal thin film formed on an insulator, which has the advantage of being very simple and accurate.

Resistivity is an important factor because of the impurity concentration of the sample, especially in the semiconductor field.

The conventional four-terminal probe has a disadvantage in that accurate measurement is difficult in the case of curved surfaces because the resistance of the specimen existing in the plane is measured by using a probe positioned on a series line.

In addition, in the manufacturing method of the probe, it was performed by selecting either dry etching or wet etching as an etching method, which has a problem in the sharpness of the probe, the production period and production cost of the probe.

The present invention was devised to solve the above problems, and it is an object of the present invention to measure impurities or electrical properties of a specimen having a three-dimensional structure by providing a probe with four terminals having a rectangular structure.

In addition, another purpose is to form an ion implantation wiring that can be thermally driven inside the cantilever of the microprobe device according to the present invention to be used as a micro clamp.

In addition, by performing wet etching and dry etching in parallel to achieve the above object, it is another object of the present invention to provide a manufacturing method for the production of a sharp probe and shortening the production period.

The macro probe device according to the present invention for achieving the above object includes a handling portion and a cantilever portion connected to the handling portion, wherein the cantilever portion is formed at the end of the connection portion, the connection portion connected to the handling portion, two each other It includes four cantilevers provided in opposite forms and probes formed at each end of the cantilever.

Preferably, each of the probes is characterized in that the upper surface is formed in a shape that becomes thinner toward the end, the handling portion and the cantilever portion is provided with a silicon substrate, the cantilever is a groove of a predetermined pattern on the upper surface It is characterized by being formed.

Preferably, further comprising an ion implantation wiring formed on an upper surface of each cantilever to drive the cantilever, and is provided on a portion of the handling portion, and further includes an ion implantation portion connected to the ion implantation wiring, respectively. Characterized in that.

Preferably, each of the cantilever and the upper surface of each of the probes is characterized in that the metal wiring is formed, and is provided on a predetermined portion of the handling portion, characterized in that it further comprises a metal wiring portion connected to each of the metal wiring; It is done.

The microprobe and manufacturing method according to the present invention have the following excellent effects.

First, by providing four probes facing each other two by one, it is possible to measure the impurities and electrical properties of the specimen having a three-dimensional structure as well as the planar structure of the specimen, to overcome the measurement limits compared to the conventional probe It works.

In addition, by forming the ion implantation wiring for the thermal drive inside the cantilever there is an effect that can be utilized as a small forceps.

In addition, the manufacturing method according to the present invention has the effect of shortening the manufacturing time of the micro-probe, and more precisely to produce a micro-probe to derive an accurate measurement value for the electrical properties of the specimen.

Hereinafter, with reference to the preferred embodiment shown in the accompanying drawings will be described in detail the technical configuration of the present invention.

However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Like reference numerals designate like elements throughout the specification.

1 is an overall configuration diagram of a micro probe according to an embodiment of the present invention, Figure 2 is an enlarged view of the main portion of the cantilever portion of the micro probe according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention 4 is an enlarged view illustrating a cantilever of a cantilever formed with a groove having a predetermined pattern, and FIG.

Referring to FIG. 1, a microprobe device according to an embodiment of the present invention includes a handling unit 110 and a cantilever unit 120.

The handling unit 110 is provided as a silicon substrate, but in one embodiment of the present invention, a silicon on insulator (SOI) substrate is used which is easily adjusted in thickness when silicon etching is performed.

 The upper surface of the handling unit 110 is further provided with a metal wiring unit 140 and the ion implantation unit 130.

Referring to FIG. 2, the cantilever part 120 includes four cantilevers 122, a connection part 121, and a probe 125, and the cantilever part 120 is made of the same material as the handling part 110. It is provided.

The connection part 121 is connected to the handling part 110 and supports the four cantilevers 122.

Probes 125 are formed at the ends of the four cantilevers 122, and the shape of the probes 125 is formed in a shape in which the thickness becomes thinner toward the ends, so that the specimens can be stably placed.

In addition, the four cantilever 122 having the probe 125 is provided in a structure facing each other so that the probe 125 is directed toward the center.

Therefore, the above-described structure can solve the problem that the existing four-terminal probe provided in a series of lines can not measure the impurities and electrical characteristics of the curved specimen.

As shown in FIG. 3, a groove 123 having a predetermined pattern is formed on an upper surface of the cantilever 122, and the groove 123 is formed to increase the warpage during thermal driving of the micro probe to be described later. Can be.

2 and 4, ion implantation wiring 124 for driving the cantilever 122 is formed in the four cantilever 122 in a zigzag form along the groove 123 formed in the cantilever 122. It is connected to the ion implantation unit 130 formed in the handling unit 110 along the connection portion 121.

Meanwhile, as shown in FIG. 2, metal wires 126 are formed on upper surfaces of the cantilever 122 and the probe 125.

 The metal wire 126 is connected to the metal wire 140 formed in the handling part 110 along the connection part 121 and may be provided with various metals having electrical conductivity. In the example, the metal wire 126 is provided with gold.

 Here, the ion implantation wiring 124 and the metallization 126 are all made of an electrically conductive material, so that the ion implantation wiring 124 and the metallization ( 126) is insulated.

Insulation treatment may be performed using various insulators, but in one embodiment of the present invention, an oxide film is formed on the ion implantation wiring 124 to perform insulation treatment.

Hereinafter, the thermal driving method of the micro probe 100 will be described in detail.

As described above, the micro probe 100 has grooves 123, ion implantation wirings 124, and metal wirings 126 having a predetermined pattern formed in the four cantilevers 122.

When an electrode is connected to the ion implantation unit 130 connected to the ion implantation wiring 124 to flow a current, joule heating occurs in the ion implantation wiring 124.

In this case, the ion implantation wiring 124 is insulated with an oxide film, and the current does not flow to the metal wiring 126, but the generated row heat is transferred to the metal wiring 126 so that the metal wiring ( 126) is inflated.

In this case, the thermal expansion coefficient of the silicon is smaller than the thermal expansion coefficient of the metal wiring 126, the four cantilever 122 is bent and driven in the opposite direction in which the metal wiring 126 is formed, wherein the four cantilever ( The groove 123 of the predetermined pattern formed at 122 serves to smooth the driving.

Therefore, as described above, when the four cantilevers 1220 are bent, the central portion of the four cantilevers 122 becomes wider, and when the specimen or the like is positioned at the center, when the applied current is cut off, the four cantilevers ( While maintaining the circular shape, 122 serves as a micro clamp to pick up an object such as the specimen.

As a result, the microprobe 100 forms a structure in which each of the probes formed in the four cantilevers 122 face each other, thereby solving the problem of the four-terminal probe located on the existing serial line. In addition, by forming the ion implantation wiring 124 for the thermal drive on the four cantilever 122, it is possible to function as a small forceps.

Hereinafter, a method of manufacturing a microprobe device having the effects and functions as described above with reference to FIG. 5 will be described in detail.

5 is a flowchart of a method of manufacturing a microprobe device according to an embodiment of the present invention.

First, in the step of forming an oxide film on a silicon substrate (S100), in the embodiment of the present invention, a silicon on insulator (SOI) substrate having an easy thickness control when etching is used. SiO ₂ the silicon It was formed by growing on a substrate.

Subsequently, in the step (S200) of forming a groove of a predetermined pattern on one surface of the silicon substrate, the groove is formed to cover a mask on which the predetermined pattern is formed on the silicon substrate and perform a general photolithography process. Then, the SiO ₂ film and the silicon was prepared by performing a silicon wet etching using a TMAH (trimethylammonium hydroxide) solution.

The groove is to increase the bending phenomenon during the thermal driving of the cantilever as described in the micro probe portion.

In this case, the thinner the thickness of the cantilever except for the groove, the smaller the spring constant value, so the warpage increases, so that the thickness of the cantilever except for the groove is reduced by adjusting the thickness of the groove.

Thereafter, after the SiO ₂ film is grown on the etched groove, a photoresist film is coated and a mask on which the cantilever shape is patterned is placed (S300).

At this time, the mask is covered so that the groove is formed on the upper surface of the cantilever.

Subsequently, etching is performed based on the formed SiO ₂ film (S400) to separate four cantilevers designed as a connecting structure, and at the same time, a tip having a sharp structure and a connecting part connected to the four cantilevers are formed.

Conventionally, after performing anisotropic etching for anisotropic etching using a dry etching method, performing isotropic etching using a wet etching method, and then performing anisotropic etching using a dry etching method again to form a sharp probe. In an embodiment, the isotropic etching through the wet etching method is immediately performed by using a buffered HF (BHF) solution to form a sharp oxide film probe shape by lateral etching on the connection structure part between the cantilevers designed smaller than the other parts. By performing anisotropic etching through dry etching, the sharp probe shape is transferred to the silicon substrate as it is.

Therefore, through the etching process as in the embodiment of the present invention, it is possible to form a sharp probe, and by reducing the conventional etching process, the manufacturing period of the microprobe device is shortened.

Next, an ion implantation wiring for thermal driving is formed on the top surfaces of the four cantilevers.

As shown in FIG. 4, the ion implantation wiring is formed in a zigzag shape on the groove formed in the cantilever, and the formed ion implantation wiring connects with the ion implantation portion formed in the handling portion through the connection portion.

In this case, further comprising the step of forming a SiO ₂ film on the upper surface of the ion implantation wiring, the SiO ₂ film is for electrical insulation with the metal wiring to be formed, after the ion implantation wiring is formed.

Next, metal layers are formed on the four cantilevers and the probes on which the ion implantation wirings are formed, and etching is performed to form metal wirings (S600).

In order to improve the adhesion between the four cantilever and the metal layer provided as a silicon substrate to form an intermediate layer in one embodiment of the present invention, the intermediate layer was formed using a chromium film.

Next, in order to deposit a metal layer on the chromium film, in one embodiment of the present invention, gold was used as the metal layer.

In addition, as a method of forming a metal wiring on the metal layer, a pattern on which the metal wiring is patterned is placed on the metal layer, a pattern is formed through a general photolithography process, and then a metal wiring is formed through a metal etching process.

The metal wiring formed by the above method is formed to be connected to the metal wiring portion of the handling portion.

Finally, in the step of etching the opposite surface of the silicon substrate (S700), first, after forming the metal wiring by coating a photoresist on the surface formed metal wiring, the front surface is not etched when the opposite surface is etched.

In this case, AZ4335 was used as the photoresist coated on the front surface.

This is because of the thickness etched on the front side, a photoresist must be used to cover the thickness.

Thereafter, the opposite surface of the silicon substrate is etched using RIE equipment.

At this time, in one embodiment of the present invention, since the silicon substrate is an SOI substrate, an SiO ₂ film is present in the intermediate layer. When the SiO ₂ film enters during the etching of the silicon substrate, the etching rate is significantly decreased, and the etching is stopped.

Subsequently, when the SiO ₂ film is removed using a BHF solution to remove the SiO ₂ film, and the photoresist that protects the front surface thereof, the manufacturing process of the microprobe apparatus according to the present invention is completed.

As a result, in the case of manufacturing the probe through the manufacturing method of the micro-probe device according to the present invention, it is possible to produce a sharp probe as described above, and also by reducing the manufacturing process, it is possible to shorten the manufacturing period of the probe.

As described above, the present invention has been shown and described with reference to the preferred embodiments, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

1 is an overall configuration diagram of a microprobe device according to an embodiment of the present invention.

Figure 2 is an enlarged view of the main portion of the cantilever portion of the microprobe device according to an embodiment of the present invention.

Figure 3 is an enlarged view of the main portion of the cantilever formed grooves of a predetermined pattern according to an embodiment of the present invention.

4 is a view illustrating a cantilever in which an ion implantation wiring is formed according to an embodiment of the present invention.

5 is a flowchart of a method of manufacturing a microprobe device according to an embodiment of the present invention.

Claims (21)

Handling unit; And And a cantilever part connected to the handling part. The cantilever part: A connection part connected to one surface of the handling part; Four cantilevers formed at the ends of the connection part and provided in a form facing each other; And And a probe formed at each end of the cantilever. The method of claim 1, Each of the probes is a micro-probe characterized in that the upper surface is formed in a shape that becomes thinner toward the end. The method of claim 1, The micro-probe device, characterized in that the handling portion and the cantilever portion is provided with a silicon substrate. The method of claim 1, Microprobe device, characterized in that the groove of a predetermined pattern is formed on the upper surface of each cantilever. The method according to any one of claims 1 to 4, And an ion implantation wiring formed on an upper surface of each cantilever to drive the cantilever. The method of claim 5, It is provided on a predetermined portion of the handling portion, the micro-probe apparatus further comprises an ion implantation portion connected to each of the ion implantation wiring. The method according to any one of claims 1 to 4, Micro probe device, characterized in that the metal wire is formed on each of the cantilever and the respective probe upper surface. The method of claim 7, wherein The micro-probe device is provided on a predetermined portion of the handling portion, and further comprising a metal wiring portion connected to each of the metal wiring. Handling unit; A cantilever portion having a connecting portion connected to the handling portion, a plurality of cantilevers formed at an end of the connecting portion, and a probe formed at an end of the cantilever; And It is formed on the upper surface of the cantilever, the ion implantation wiring for driving the cantilever; including, wherein the plurality of cantilever is provided with four, characterized in that the four cantilever is provided with a structure facing each other Micro probe. delete The method of claim 9, Each of the probes is a micro-probe characterized in that the upper surface is formed in a shape that becomes thinner toward the end. The method of claim 11, The micro-probe device, characterized in that the handling portion and the cantilever portion is provided with a silicon substrate. The method of claim 11,  Microprobe device, characterized in that a groove of a predetermined pattern is formed on the upper surface of the plurality of cantilever. The method of claim 11, The micro-probe device is provided on a predetermined portion of the handling portion, further comprising an ion implantation portion connected to the ion implantation wire. The method of claim 11, And a plurality of metal wires are formed on the plurality of cantilevers and the probe upper surfaces, respectively. The method of claim 15, The micro-probe device provided on a predetermined portion of the handling portion, further comprising a metal wiring portion connected to the metal wiring. Forming a oxide film on both surfaces of the silicon substrate; Forming a groove of a predetermined pattern on one surface of the silicon substrate; Patterning a cantilever shape on the silicon substrate, wherein the groove is patterned such that the groove is located on an upper surface of the cantilever; Forming a cantilever and a probe by etching the silicon substrate, and performing an isotropic etching through wet etching and then performing anisotropic etching through dry etching; A fifth step of forming an ion implantation wiring on an upper surface of the cantilever; Forming a metal layer on the cantilever and the probe, and forming a metal wire through etching; And And a seventh step of removing a portion of the silicon substrate from an opposite side by etching. The method of claim 17, The cantilever is etched so that the four cantilever is a structure facing each other two by two. The method of claim 17, The probe is a micro-probe device manufacturing method characterized in that the upper surface is formed in a shape that becomes thinner toward the end. The method of claim 17, And forming a oxide film on the ion implantation interconnection after the ion implantation interconnection is formed between the fifth step and the sixth step. The method of claim 17, The sixth step: A step 6-1 of forming a chromium layer to improve adhesion between the silicon substrate and the metal layer; A step 6-2 of depositing a metal layer on the formed chromium layer; And The method of claim 6, further comprising the step 6-3 of forming a metal wiring by etching the metal layer.

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