KR101002172B1 - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR101002172B1 KR101002172B1 KR1020040079701A KR20040079701A KR101002172B1 KR 101002172 B1 KR101002172 B1 KR 101002172B1 KR 1020040079701 A KR1020040079701 A KR 1020040079701A KR 20040079701 A KR20040079701 A KR 20040079701A KR 101002172 B1 KR101002172 B1 KR 101002172B1
- Authority
- KR
- South Korea
- Prior art keywords
- die pad
- resin
- semiconductor laser
- lead frame
- resin portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 229920005989 resin Polymers 0.000 claims abstract description 120
- 239000011347 resin Substances 0.000 claims abstract description 120
- 230000017525 heat dissipation Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 210000001364 upper extremity Anatomy 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
- G11B7/1275—Two or more lasers having different wavelengths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
- G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Abstract
Description
Claims (12)
- 판 형상의 리드 프레임으로부터 형성된 다이 패드 및 복수의 리드;상기 다이패드 및 복수의 리드를 일체로 유지하는 몰드 수지로 이루어진 수지부; 및상기 다이 패드의 표면측에 탑재된 레이저칩을 구비하고,상기 리드 프레임의 다이 패드 및 복수의 리드 선단부(先端部)는 상기 리드 프레임면과 다른 방향으로는 포밍 가공이 실시되지 않고, 상기 수지부가 상기 복수의 리드 및 상기 다이 패드를 일체로 유지하기 위해 상기 리드 프레임의 일부의 표리 양면에 설치되는 동시에, 상기 다이 패드 이면의 일부는 상기 수지부로 피복되지 않고 노출하며, 또한 상기 다이 패드의 측부에 상기 수지부에 의하여 표리 양면이 덮히지 않고 노출하는 위치 결정용 및 방열용 중 적어도 어느 하나의 용도의 핀이 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 다이 패드의 윗부분 이면에 홈(凹)부가 형성되고, 상기 다이 패드의 표면에 설치된 상기 수지부가 상기 다이 패드의 윗부분을 거쳐 상기 다이 패드 이면의 홈부 내에 유입하며, 또한 상기 홈부 내에 매립된 수지와 상기 다이 패드 이면의 윗부분측이 한 면으로 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 수지부의 표면측으로부터 측면에 걸친 코너부에, C 면 또는 R 면의 제거부가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 리드 프레임의 이면에 있어서, 상기 수지부의 면적이 상기 수지부에 의하여 덮히지 않고 노출한 리드 프레임의 면적보다 작게 되도록 상기 핀 및 수지부가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 레이저칩의 광의 진행 방향을 중심축으로 하여, 상기 핀의 최측연단(最側緣端)까지의 거리 A와, 상기 중심축과 상기 수지부의 최측연단까지의 거리 B와의 차이, 및 상기 수지부의 하단으로부터 상기 다이 패드 상단까지의 거리 D와, 상기 수지부 하단으로부터 상기 수지부 상단까지의 거리 C와의 차이의 합 (A - B + D - C) 가 2㎜ 를 초과하며, 상기 핀의 가장 큰 부분의 폭이 5.6㎜ 보다도 작게 되도록 상기 핀 및 수지부가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 다이 패드에, 상기 다이 패드의 이면측에서 직경이 크고 표면측에서 작은, 단(段)이 있는 관통공이 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 수지부는, 상기 리드의 근원부(根元部)를 덮는 동시에, 상기 다이 패드의 이면측에도 그 윗부분 및 바닥부분측으로부터 돌아들어가게 형성되어 이루어진 반도체 레이저.
- 제 7 항에 있어서,상기 다이 패드 이면의 노출면과 상기 다이 패드 이면측에 돌아들어간 상기 수지부의 표면은, 상기 다이 패드의 윗부분측이 동일면이고, 상기 바닥부분측에는 단차(段差)가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 레이저칩의 후방에 있어서 상기 수지부에는, 상기 레이저칩의 후단면으로부터 출사하는 광이 반사하여 레이저칩측으로 돌아오지 않도록, 테이퍼부가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 수지부에 피복되지 않고 노출하는 상기 핀의 폭이 0.5㎜ 이상으로 되도록 상기 수지부가 형성되어 이루어진 반도체 레이저.
- 제 10 항에 있어서,상기 핀은 금속으로 이루어진 하우징과 접촉하도록 그 하우징 내에 삽입되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 레이저칩은 2 파장용 레이저칩인 반도체 레이저.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00347332 | 2003-10-06 | ||
JP2003347332A JP4031748B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050033496A KR20050033496A (ko) | 2005-04-12 |
KR101002172B1 true KR101002172B1 (ko) | 2010-12-17 |
Family
ID=34386403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040079701A Expired - Fee Related KR101002172B1 (ko) | 2003-10-06 | 2004-10-06 | 반도체 레이저 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7428255B2 (ko) |
JP (1) | JP4031748B2 (ko) |
KR (1) | KR101002172B1 (ko) |
CN (1) | CN100466403C (ko) |
TW (1) | TWI339468B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005136171A (ja) * | 2003-10-30 | 2005-05-26 | Sankyo Seiki Mfg Co Ltd | 半導体レーザ装置および光ヘッド装置 |
KR100576881B1 (ko) * | 2005-01-03 | 2006-05-10 | 삼성전기주식회사 | 반도체 레이저 다이오드장치 및 그 제조방법 |
JP2007005505A (ja) * | 2005-06-23 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
JP4713250B2 (ja) * | 2005-07-01 | 2011-06-29 | 三菱電機株式会社 | 半導体素子および半導体素子の製造方法 |
JP2009200463A (ja) * | 2008-01-23 | 2009-09-03 | Panasonic Corp | 半導体装置 |
JP2009302431A (ja) * | 2008-06-17 | 2009-12-24 | Panasonic Corp | 光半導体装置用パッケージと製造方法および光半導体装置 |
JP2010074142A (ja) * | 2008-08-20 | 2010-04-02 | Panasonic Corp | 半導体装置及びそれを用いた電子機器 |
JP5206399B2 (ja) * | 2008-12-25 | 2013-06-12 | 三菱電機株式会社 | レーザ装置及びその製造方法 |
JP2011077458A (ja) * | 2009-10-01 | 2011-04-14 | Panasonic Corp | レーザー装置 |
JP7181413B2 (ja) * | 2018-09-21 | 2022-11-30 | チャイナ タバコ フーナン インダストリアル カンパニー リミテッド | 超音波電子タバコ |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154848A (ja) | 1997-12-29 | 1998-06-09 | Sony Corp | 半導体レーザ装置 |
JP2002198608A (ja) | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 半導体レーザステム |
JP2002359335A (ja) | 2001-05-31 | 2002-12-13 | Kawai Musical Instr Mfg Co Ltd | 半導体装置及びその製造方法 |
JP2002368323A (ja) | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0254263A (ja) | 1988-08-18 | 1990-02-23 | Konica Corp | ハロゲン化銀カラー写真感光材料用安定液および該感光材料の処理方法 |
JPH0523563U (ja) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | 半導体レーザ装置 |
JPH07335980A (ja) * | 1994-06-07 | 1995-12-22 | Fuji Electric Co Ltd | 半導体レーザ装置 |
JP3424344B2 (ja) * | 1994-09-01 | 2003-07-07 | ヤマハ株式会社 | 半導体装置 |
JP3082695B2 (ja) * | 1997-01-16 | 2000-08-28 | 日本電気株式会社 | 半導体レーザ装置、その製造方法 |
JPH11307871A (ja) | 1998-04-23 | 1999-11-05 | Nec Corp | 半導体レーザ装置 |
US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
JP2000357839A (ja) | 1999-06-16 | 2000-12-26 | Sanyo Electric Co Ltd | レーザ装置 |
JP3461332B2 (ja) | 1999-09-10 | 2003-10-27 | 松下電器産業株式会社 | リードフレーム及びそれを用いた樹脂パッケージと光電子装置 |
KR100542336B1 (ko) * | 2000-07-17 | 2006-01-11 | 산요덴키가부시키가이샤 | 반도체 레이저장치 |
JP3806586B2 (ja) | 2000-07-26 | 2006-08-09 | 三洋電機株式会社 | 半導体レーザ装置 |
JP3737769B2 (ja) * | 2002-03-28 | 2006-01-25 | 株式会社東芝 | 半導体レーザ装置 |
-
2003
- 2003-10-06 JP JP2003347332A patent/JP4031748B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-24 CN CNB2004101038888A patent/CN100466403C/zh not_active Expired - Fee Related
- 2004-10-01 TW TW093129794A patent/TWI339468B/zh not_active IP Right Cessation
- 2004-10-04 US US10/956,035 patent/US7428255B2/en active Active
- 2004-10-06 KR KR1020040079701A patent/KR101002172B1/ko not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154848A (ja) | 1997-12-29 | 1998-06-09 | Sony Corp | 半導体レーザ装置 |
JP2002198608A (ja) | 2000-12-27 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 半導体レーザステム |
JP2002359335A (ja) | 2001-05-31 | 2002-12-13 | Kawai Musical Instr Mfg Co Ltd | 半導体装置及びその製造方法 |
JP2002368323A (ja) | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Also Published As
Publication number | Publication date |
---|---|
US7428255B2 (en) | 2008-09-23 |
TWI339468B (en) | 2011-03-21 |
CN1619902A (zh) | 2005-05-25 |
CN100466403C (zh) | 2009-03-04 |
KR20050033496A (ko) | 2005-04-12 |
TW200515655A (en) | 2005-05-01 |
JP4031748B2 (ja) | 2008-01-09 |
JP2005116699A (ja) | 2005-04-28 |
US20050074043A1 (en) | 2005-04-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3802896B2 (ja) | 半導体レーザ | |
KR100780522B1 (ko) | 반도체 레이저 | |
KR20030087932A (ko) | 반도체 레이져, 그 제조 방법 및 광 픽업 장치 | |
WO2002007275A1 (en) | Semiconductor laser device | |
KR101002172B1 (ko) | 반도체 레이저 | |
CN100483872C (zh) | 半导体激光装置和光学拾波装置 | |
CN100395928C (zh) | 半导体激光设备 | |
KR100643723B1 (ko) | 반도체 레이저 유닛 및 이를 이용한 광 픽업 장치 | |
JP4215703B2 (ja) | 光学デバイスおよびその製造方法 | |
JP2006114096A (ja) | 半導体レーザユニットおよびそれを備えた光ピックアップ装置 | |
KR20070005464A (ko) | 반도체레이저유닛 및 광픽업장치 | |
US7929076B2 (en) | Optical module and optical pickup apparatus | |
KR100590991B1 (ko) | 레이저 유니트 및 이에 사용되는 절연블록 | |
JP3846884B2 (ja) | 半導体レーザ装置搭載用フレーム、半導体レーザ装置、光ピックアップ装置および半導体レーザ装置の製造方法 | |
JPH06196817A (ja) | 半導体レーザ装置 | |
JP2006237418A (ja) | 半導体レーザ装置及びそれを用いた光ピックアップ | |
JP3889742B2 (ja) | 半導体レーザ装置の製造方法 | |
JPH06314847A (ja) | 半導体レーザ装置 | |
JP2001237481A (ja) | レーザダイオード用マウント構造及びその実装方法 | |
JP2009302244A (ja) | 半導体レーザ装置およびその実装方法 | |
JPH1125494A (ja) | 半導体光ユニット | |
JP2005347486A (ja) | 光学デバイス及びその製造方法 | |
JP2006245249A (ja) | 樹脂パッケージ、光学デバイス、及びそのためのリードフレーム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20041006 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20081222 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20041006 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20100607 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20100915 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20101210 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20101210 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20131118 Year of fee payment: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20131118 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141120 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20141120 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151118 Year of fee payment: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20151118 Start annual number: 6 End annual number: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161123 Year of fee payment: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20161123 Start annual number: 7 End annual number: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171114 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20171114 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181121 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20181121 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20211119 Start annual number: 12 End annual number: 12 |
|
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20240921 |