KR100972980B1 - Semiconductor light emitting device and manufacturing method thereof - Google Patents

Abstract

The present invention provides a plurality of light emitting laminates in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; A second electrode layer stacked on the second conductive semiconductor layer; A first electrode layer formed under the second electrode layer and electrically connecting the second electrode layer of the first semiconductor layer and another adjacent light emitting stack; An insulating layer electrically insulating the first electrode layer and the second electrode layer; And a conductive substrate positioned below the insulating layer, and a method of manufacturing the same.

Description

Semiconductor light emitting device and manufacturing method

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a monolithic semiconductor light emitting body and a method of manufacturing the same, which can easily implement a wiring structure suitable for various array types of light emitting devices.

Since the semiconductor light emitting device has a beneficial advantage as a light source in terms of output, efficiency and reliability, it has been actively researched and developed as a high power, high efficiency light source that can replace the backlight of the lighting device or the display device.

On the other hand, light emitting diodes are generally driven at low direct currents. Thus, driving a light emitting diode at a normal voltage (AC 220V) requires an additional circuit (eg, AC / DC converter) that supplies a low DC output voltage.

However, the introduction of such additional circuitry complicates the configuration of the LED module, which can cause errors in the individual LED mounting and assembly process, and the LED device can be destroyed by the high reverse bias voltage.

In order to solve this problem, semiconductor light emitting devices having a wiring connection that can be driven even at an AC voltage have been proposed.

Such semiconductor light emitting devices are classified into semiconductor light emitting devices having a horizontal structure and semiconductor light emitting devices having a vertical structure.

A semiconductor light emitting device having a double horizontal structure exposes an n-type semiconductor layer by etching a portion of a light emitting stack in which an n-type semiconductor layer, an active layer and a p-type semiconductor layer are sequentially stacked, and exposes the n-type semiconductor layer. An n contact (electrode layer) is formed over the portion, and a p contact (electrode layer) is formed over the p-type semiconductor layer, and then the bridge between the n contact (electrode layer) and the p contact (electrode layer) is made of bridge metal. It is connected and electrically connected.

Since the horizontal semiconductor light emitting device has to etch the upper p-type semiconductor layer and the active layer for ohmic contact, the light emitting area of the light emitting device is reduced, and as a result, the light emitting efficiency is reduced, resulting in a large area for high output. In the case of a light emitting device, this problem becomes more serious.

On the other hand, the semiconductor light emitting device having a vertical structure is designed to overcome these disadvantages, to form a p contact (electrode layer) below the p-type semiconductor layer, and to form an n contact (electrode layer) above the n-type semiconductor layer A bridge metal in contact with the p contact (electrode layer) is formed along the sidewall of the device. Then, the growth substrate (sapphire substrate, etc.) is removed to expose the bridge metal, and the exposed portions of the bridge metal and the n contact (electrode layer) formed on the n-type semiconductor layer are electrically connected to each other. .

The semiconductor light emitting device having the vertical structure has a problem in that a weak portion is generated in the process of exposing the bridge metal and in the process of connecting the exposed bridge metal and the n contact, thereby decreasing productivity and yield.

The present invention is to solve the above problems, it is possible to significantly eliminate the process for connecting the electrode layer, not only excellent productivity and yield improvement effect, but also high quality that can be uniformly distributed even in a large area light emitting device An object thereof is to provide a semiconductor light emitting device and a method of manufacturing the same.

To this end, the present invention includes a plurality of light emitting laminates in which the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are sequentially stacked; A second electrode layer stacked on the second conductive semiconductor layer; A first electrode layer formed under the second electrode layer and electrically connecting the second electrode layer of the first semiconductor layer and another adjacent light emitting stack; An insulating layer electrically insulating the first electrode layer and the second electrode layer; And a conductive substrate disposed under the insulating layer.

According to the exemplary embodiment of the present invention, the light emitting stack is etched to expose a portion of the first conductive semiconductor layer, and the first electrode layer is electrically connected to the exposed region of the first conductive semiconductor layer. It is preferable.

According to another embodiment of the present invention, the semiconductor light emitting device of the present invention penetrates through the insulating layer, the second electrode layer, the second conductive semiconductor layer, and the active layer, and one surface of the semiconductor light emitting device contacts the first conductive semiconductor layer, and the other surface of the semiconductor light emitting device It may include at least one contact hole in contact with the first electrode layer. In this case, the contact hole is preferably electrically insulated from the second electrode layer, the second semiconductor layer, and the active layer.

In addition, the first electrode layer positioned at one end of the conductive substrate is electrically connected to the conductive substrate, and the second electrode layer positioned at the other end of the conductive substrate is exposed so that a part of the interface with the second semiconductor layer is exposed. It is preferably formed.

In addition, it is preferable that an uneven pattern is formed on the surface of the first conductive semiconductor layer.

The conductive substrate may be a metallic substrate including any one of Au, Ni, Cu, and W, a semiconductor substrate including any one of Si, Ge, and GaAs, or a SiAl composite material substrate.

The present invention also includes forming a plurality of light emitting laminates including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a growth substrate; Forming a second electrode layer on the second conductive semiconductor layer; Forming a first insulating layer surrounding the plurality of light emitting stacks and the second electrode layer; Selectively removing the first insulating layer to expose a portion of the second electrode layer and the first conductive semiconductor layer; Forming a first electrode layer electrically connecting an exposed region of the first semiconductor layer and an exposed region of a second electrode layer of another neighboring light emitting stack; Forming a second insulating layer on the first electrode layer; And depositing a conductive substrate on the second insulating layer, and removing the growth substrate.

In this case, the forming of the plurality of light emitting stacks may include sequentially growing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer on a growth substrate; And etching a portion of the grown layers until the growth substrate portion is exposed to obtain a plurality of separated light emitting laminates. If necessary, a portion of the plurality of light emitting laminates may be etched. The method may further include exposing a portion of the first conductive semiconductor layer.

Meanwhile, in the forming of the second insulating layer, it is preferable that the second insulating layer is not formed on the first electrode layer positioned at one end of the conductive substrate.

The method of manufacturing a semiconductor light emitting device may include etching a portion of the light emitting stack positioned at the other end of the conductive substrate to expose a portion of an interface between the second electrode layer and the second conductive semiconductor to the outside. It may further include.

The present invention also includes forming a plurality of light emitting laminates including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a growth substrate; Forming a second electrode layer on the second conductive semiconductor layer; Forming a first insulating layer surrounding the plurality of light emitting stacks and the second electrode layer; Selectively removing the first insulating layer to expose a portion of the second electrode layer; Forming at least one contact hole penetrating the first insulating layer, the second electrode layer, the second conductive semiconductor layer, and the active layer; Forming a first electrode layer connected to the at least one contact hole and an exposed area of the second electrode layer; Forming a second insulating layer on the first electrode layer; And depositing a conductive substrate on the second insulating layer, and removing the growth substrate.

The forming of the plurality of light emitting stacks may include sequentially growing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer on a growth substrate; And etching a portion of the grown layers until the portion of the growth substrate is exposed to obtain a plurality of separated light emitting laminates.

In this case, it is preferable that the second insulating layer is not formed on the first electrode layer positioned at one end of the conductive substrate.

The method of manufacturing a semiconductor light emitting device may include etching a portion of the light emitting stack positioned at the other end of the conductive substrate to expose a portion of an interface between the second electrode layer and the second conductive semiconductor to the outside. It may further include.

In the semiconductor light emitting device of the present invention, since both the first electrode layer and the second electrode layer are formed under the light emitting surface, the emitted light can be prevented from being reflected or absorbed by the electrode, and thus the light efficiency is excellent.

In addition, the present invention electrically connects the first conductive semiconductor layer and the first electrode layer using a contact hole, thereby enabling uniform current distribution even in a large area chip.

In addition, the present invention has an advantage that the connection between the first electrode layer and the second electrode layer is present in the light emitting device, compared to the conventional light emitting device having a connection portion exposed to excellent durability.

In addition, using the manufacturing method of the present invention, since the first electrode layer and the second electrode layer can be electrically connected through a simple process, there is an advantage that the productivity and yield are excellent.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Embodiment of this invention is provided in order to demonstrate this invention more completely to the person skilled in the art.

1 and 2 illustrate embodiments of a semiconductor light emitting device of the present invention.

As shown in FIGS. 1 and 2, in the semiconductor light emitting device of the present invention, the first conductive semiconductor layers 11 and 110, the active layers 12 and 120, and the second conductive semiconductor layers 13 and 130 are sequentially formed. Light-emitting laminates 10 and 100 stacked on the substrate; Second electrode layers 20 and 200; Insulating layers 30 and 300; First electrode layers 40 and 500; And conductive substrates 60 and 700.

The semiconductor layers 11, 110, 13, and 130 may be formed of, for example, GaN-based semiconductors, ZnO-based semiconductors, GaAs-based semiconductors, GaP-based semiconductors, GaAsP-based semiconductors, or a combination thereof. Formation can be performed using, for example, a molecular beam epitaxy (MBE) method. In addition, the semiconductor layers may be appropriately selected from the group consisting of a group III-V semiconductor, a group II-VI semiconductor, and Si. The semiconductor layers 111 and 113 are doped with an appropriate impurity in consideration of the respective conductivity type to the above-described semiconductor.

Meanwhile, the active layers 12 and 120 are layers for activating light emission, and have an energy band gap less than that of the first conductive semiconductor layers 11 and 110 and the second conductive semiconductor layers 13 and 130. It forms using the substance which has. For example, when the first conductive semiconductor layers 11 and 110 and the second conductive semiconductor layers 13 and 130 are GaN-based compound semiconductors, InAlGaN-based compounds having an energy band gap less than that of GaN The active layers 12 and 120 may be formed using a semiconductor. For example, the active layers 12 and 120 may include In _x Al _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1).

It is preferable that the active layers 12 and 120 are not doped with impurities, and the wavelength of light emitted by controlling the molar ratio of the constituent materials may be adjusted. Therefore, the semiconductor light emitting device may emit light of any one of infrared rays, visible rays, and ultraviolet rays according to the characteristics of the active layers 12 and 120.

Meanwhile, the first electrode layer and the second electrode layers 20, 40, 200, and 500 are layers for applying a voltage to the same conductive semiconductor layer, respectively, and may include metal in consideration of electrical conductivity. That is, the electrode layers are electrodes that electrically connect the semiconductor layers to an external power source (not shown). The n-type electrode may include Ti, Al, Ta, Cr, and the p-type electrode may include Ag, Al, or the like, which is a high reflectance electrode material.

The first electrode layers 40 and 500 are connected to the first conductive semiconductor layers 11 and 110, and the second electrode layers 20 and 200 are connected to the second conductive semiconductor layers 13 and 130, respectively. Due to the property of being connected to, the insulating layers 30 and 300 are electrically separated from each other. The insulating layers 30 and 300 are preferably made of a material having low electrical conductivity, and may include, for example, an oxide such as SiO ₂ .

Meanwhile, in the present invention, the second electrode layers 20 and 200 are formed on the second semiconductor layers 12 and 120.

In addition, the first electrode layers 40 and 500 are formed under the second electrode layers 20 and 200, are electrically connected to the first conductive semiconductor layers 11 and 110, and are adjacent to other light emitting layers. Is electrically connected to the second electrode layer of the sieve.

In the semiconductor light emitting device of the present invention, the first electrode layer is formed below the light emitting stack, and the first electrode layer and the second electrode layer of the adjacent light emitting stack are electrically connected to each other. It is characterized in that the connecting portion of the two-electrode layer is not exposed to the outside of the light emitting device. As such, when the connection portion between the first electrode layer and the second electrode layer is not exposed to the outside of the light emitting device, there is little possibility of being damaged by an impact or the like, thereby improving durability.

Meanwhile, various methods may be used to electrically connect the first electrode layer with the second electrode layer of the first conductive semiconductor layer and the adjacent light emitting stack.

First, as shown in FIG. 1, a portion of the light emitting stack 10 is etched to partially expose the first conductive semiconductor layer 11, and then an insulating layer is formed to form a first conductive semiconductor layer ( 11, a portion of the insulating layer 30 is selectively removed from the exposed portion of the light emitting stack 10 and the second electrode layer 20 adjacent to the exposed region of the light emitting stack 10, and the portion of the insulating layer 30 is selectively removed. By forming the first electrode layer 40, the first electrode layer 40 may be formed to be electrically connected to the first conductive semiconductor layer 11 and the second electrode layer 20 of the adjacent light emitting stack.

Although not shown, a portion of the light emitting stack is etched to partially expose the first conductive semiconductor layer, an insulating layer is formed, and then the exposed region of the first conductive semiconductor layer and adjacent light emitting devices After removing a portion of the insulating layer on the upper part of the second electrode layer, contact holes are formed to contact the exposed portions of the region where the insulating layer is selectively removed, that is, the first conductive semiconductor layer and the second electrode layer of the adjacent light emitting device. The first electrode layer may be electrically connected to the first conductive semiconductor layer and the second electrode layer by forming a first electrode layer in contact with the contact holes.

In addition, as shown in FIG. 2, the contact penetrates the insulating layer 300, the second electrode layer 200, the second conductive semiconductor layer 130, and the active layer 120 without etching a portion of the light emitting stack. By forming the holes 400, the first electrode layer 500 may be electrically connected to the first conductive semiconductor layer 110. In this case, the contact hole 400 is preferably at least one. One contact hole 400 is sufficient for electrical connection. However, when a plurality of contact holes are formed, there is an advantage in that currents transmitted to the first conductive semiconductor layer can be uniformly distributed.

In addition, the contact hole 400 may be electrically insulated from the second electrode layer 200, the second semiconductor layer 120, and the active layer 120. To this end, as shown in FIG. 3, an insulating layer 410 may be formed in the contact hole 400.

Meanwhile, as shown in FIGS. 1 and 2, the light emitting device of the present invention may include a first electrode layer disposed on the light emitting stacks 10 and 100 positioned at one end of the conductive substrates 60 and 700. 40 and 500 are preferably electrically connected to the conductive substrates 60 and 700. When the insulating layers 30 and 300 are formed, the insulating layers 30 and 300 are insulated from the upper portions of the first electrode layers 40 and 500 positioned on the light emitting stacks 10 and 100 positioned at one ends of the conductive substrates 60 and 700. The layers 30 and 300 may not be formed, or after the insulating layers 30 and 300 are formed, the insulating layer may be selectively removed.

1 and 2, the second electrode layers 20 and 200 formed on the light emitting stacks 10 and 100 positioned at the other ends of the conductive substrate may include the second semiconductor layer 13. , 130 is preferably formed to expose a portion of the interface with. This may be implemented by etching a portion of the light emitting stacks 10 and 100 positioned at the other ends of the conductive substrates 60 and 700 until the second electrode layers 20 and 200 are exposed.

As such, when the first electrode layer on the light emitting stack positioned at one end of the conductive substrate is electrically connected to the conductive substrate, and the second electrode layer of the light emitting stack located at the other end of the conductive substrate is exposed. By forming a wiring with an external circuit in the exposed portion of the conductive substrate and the second electrode layer, there is an advantage that the wiring connection of the light emitting device can be simplified.

On the other hand, it is preferable that an uneven pattern (not shown) is formed on the surface of the first conductive semiconductor layer. When the surface of the first conductive semiconductor layer is formed with an uneven pattern, the amount of light totally reflected inside the light emitting device is reduced, thereby improving light efficiency.

Meanwhile, the conductive substrates 60 and 700 are in contact with the first electrode layer on the light emitting stack positioned at the terminal. In this case, the conductive substrate may be a metallic substrate, a semiconductor substrate, or a composite substrate. When the conductive substrate is a metal, it may be composed of any one of Au, Ni, Cu, and W. In addition, when the conductive substrate is a semiconductor substrate, the semiconductor substrate may be any one of Si, Ge, and GaAs. For composite substrates, materials such as SiAl can be used. These conductive substrates may be growth substrates, or may be a support substrate bonded after removing the non-conductive substrate after using a non-conductive substrate such as a sapphire substrate having a relatively low lattice mismatch as a growth substrate.

When the conductive substrate is a supporting substrate, it may be formed using a plating method or a substrate bonding method. In detail, a method of forming a conductive substrate on a semiconductor light emitting device may be performed by forming a plating seed layer to form a substrate, or separately preparing a conductive substrate to form a conductive adhesive such as Au, Au-Sn, or Pb-Sr. , 600 may be used to bond the substrate.

Next, the manufacturing method of the semiconductor light-emitting device of this invention is demonstrated.

A method of manufacturing a semiconductor light emitting device of the present invention includes the steps of forming a plurality of light emitting laminates including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a growth substrate; Forming a second electrode layer on the second conductive semiconductor layer of the light emitting stack; Forming a first insulating layer on the plurality of light emitting stacks; Selectively removing the first insulating layer to expose a portion of the second electrode layer and the first conductive semiconductor layer; Forming a first electrode layer electrically connecting an exposed region of the first semiconductor layer and an exposed region of a second electrode layer of another neighboring light emitting stack; Forming a second insulating layer on the first electrode layer; And laminating a conductive substrate on the second insulating layer, and removing the growth substrate.

On the other hand, Figure 4 shows an embodiment of a method of manufacturing a semiconductor light emitting device of the present invention. Hereinafter, a method of manufacturing the semiconductor light emitting device of the present invention will be described in more detail with reference to FIG. 4.

As shown in FIG. 4A, a plurality of light emitting stacks including a first conductive semiconductor layer 11, an active layer 12, and a second conductive semiconductor layer 13 are formed on a growth substrate 70. The sieve 10 is formed.

In this case, the plurality of light emitting laminates may be obtained by sequentially growing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer on a growth substrate, and then etching a portion of the grown layers. At this time, the etching is preferably performed until the growth substrate is exposed, but is not necessarily limited thereto.

Meanwhile, after forming a plurality of light emitting stacks on the growth substrate through the above process, a part of the light emitting stack may be etched to expose a part of the first conductive semiconductor layer to the outside. However, this step is not essential and is performed as necessary.

Then, the second electrode layer 20 is formed on the second conductive semiconductor layer 13 of the light emitting stack 10.

Next, as shown in FIG. 4B, a first insulating layer 30 surrounding the second electrode layer 20 and the plurality of light emitting stacks 10 is formed.

Next, as shown in FIG. 4C, the first insulating layer 30 is selectively removed to expose some regions of the second electrode layer 20 and the first conductive semiconductor layer 11. Let's do it.

Next, as shown in FIG. 4 (d), an agent is connected to an exposed area of the second electrode layer 20 on the other light emitting stack 10 adjacent to the exposed area of the first semiconductor layer 11. One electrode layer 40 is formed.

Subsequently, as illustrated in FIG. 4E, a second insulating layer 30 ′ is formed on the first electrode layer 40. In this case, the second insulating layer 30 ′ is preferably not formed on the first electrode layer 40 positioned on the light emitting stack 10 positioned at one end thereof.

Next, as shown in FIG. 4F, the conductive substrate 60 is stacked on the second insulating layer 30 ′, and the growth substrate is removed. In this case, the conductive substrate 40 may be formed using a plating method or a substrate bonding method.

Next, as illustrated in FIG. 4G, the light emitting stack 10 positioned at the other end is partially etched to expose the second electrode layer 20 to the outside.

On the other hand, the method of manufacturing a semiconductor light emitting device of the present invention comprises the steps of forming a plurality of light emitting laminate including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a growth substrate; Stacking a second electrode layer on the second conductive semiconductor layer of the light emitting stack; Forming a first insulating layer surrounding the second electrode layer and the plurality of light emitting stacks; Selectively removing the first insulating layer to expose a portion of the second electrode layer; Forming at least one contact hole penetrating the first insulating layer, the second electrode layer, the second conductive semiconductor layer, and the active layer; Forming a first electrode layer connected to the at least one contact hole and an exposed area of the second electrode layer; Forming a second insulating layer on the first electrode layer; And laminating a conductive substrate on the second insulating layer, and removing the growth substrate.

5 shows another embodiment of the semiconductor light emitting device of the present invention. Hereinafter, a method of manufacturing the semiconductor light emitting device of the present invention shown in FIG. 5 will be described.

First, as illustrated in FIG. 5A, a plurality of light emitting laminates including a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130 on a growth substrate. Form 100.

In this case, the plurality of light emitting laminates 100 sequentially grow the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on a growth substrate, and then grow the substrate. By etching some areas of the prepared layers. At this time, the etching is preferably performed until the growth substrate is exposed, but is not necessarily limited thereto.

Thereafter, the second electrode layer 200 is formed on the second conductive semiconductor layer 130 of the light emitting stack 100.

Next, as shown in FIG. 5B, a first insulating layer 300 is formed to surround the second electrode layer 200 and the plurality of light emitting stacks 100, and as shown in FIG. 5C. As illustrated, the first insulating layer 300 is selectively removed to expose a portion of the second electrode layer 200.

Then, as shown in Figure 5 (d), the first insulating layer 300, the second electrode layer 200. At least one contact hole 400 penetrating the second conductive semiconductor layer 130 and the active layer 120 is formed. At this time, one surface of the contact hole 400 is in contact with the first conductive semiconductor layer 110, and the other surface is in contact with the first electrode layer 500, which will be described later, so that the first conductive semiconductor layer 110 and the first surface are contacted with each other. The electrode layer 500 is electrically connected. Meanwhile, a process of forming an insulating layer in the contact hole 400 may be further performed as necessary.

After the contact hole 400 is formed by the above process, as shown in FIG. 5E, the first electrode layer 500 is formed. In this case, the first electrode layer 500 is formed to contact the exposed region of the contact hole 400 and the second electrode layer 130 on the adjacent light emitting stack.

Subsequently, as illustrated in FIG. 5F, a second insulating layer 300 ′ is formed on the first electrode layer 500. In this case, the second insulating layer 300 ′ is preferably not formed on the first electrode layer 500 positioned on the light emitting stack 100 positioned at an end thereof.

Next, as illustrated in FIG. 5G, the conductive substrate 600 is stacked on the first insulating layer, and the growth substrate is removed. In this case, the conductive substrate 600 may be formed using a plating method or a substrate bonding method.

Next, as shown in FIG. 5H, the light emitting stack positioned at the other end is partially etched to expose the second electrode layer 200 to the outside.

By using the above-described manufacturing method of the present invention, since a separate process for electrically connecting the first electrode layer and the second electrode layer is not required, there is an advantage of excellent productivity and yield. In addition, since both the first electrode layer and the second electrode layer are formed inside the light emitting element, there is an advantage that the durability is superior to that when the wiring is discharged to the outside.

1 is a diagram showing a first embodiment of a semiconductor light emitting device of the present invention.

2 is a diagram showing a second embodiment of the semiconductor light emitting device of the present invention.

3 is a top plan view of a light emitting element included in the semiconductor light emitting device of the second embodiment.

4 is a view for explaining a first embodiment of the method for manufacturing a semiconductor light emitting device of the present invention.

5 is a view for explaining a second embodiment of the method for manufacturing the semiconductor light emitting device of the present invention.

Claims (19)

A plurality of light emitting stacks in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; A second electrode layer stacked on the second conductive semiconductor layer; A first electrode layer formed under the second electrode layer and electrically connecting the second electrode layer of the first semiconductor layer and another light emitting stack adjacent thereto; An insulating layer electrically insulating the first electrode layer and the second electrode layer; And And a conductive substrate positioned below the insulating layer. The method of claim 1, The light emitting stack is etched to expose a portion of the first conductive semiconductor layer. And the first electrode layer is electrically connected to an exposed area of the first conductive semiconductor layer. The method of claim 1, At least one contact hole penetrating the insulating layer, the second electrode layer, the second conductive semiconductor layer, and the active layer, the at least one contact hole being in contact with the first conductive semiconductor layer, and the other surface being in contact with the first electrode layer. A semiconductor light emitting device. The method of claim 3, And the contact hole is electrically insulated from the second electrode layer, the second semiconductor layer, and the active layer. The method according to any one of claims 1 to 4, And a first electrode layer positioned at one end of the conductive substrate is electrically connected to the conductive substrate. The method of claim 5, The second electrode layer positioned at the other end of the conductive substrate is formed so that part of the interface with the second semiconductor layer is exposed. The method of claim 1, And a concave-convex pattern is formed on a surface of the first conductive semiconductor layer. The method of claim 1, The conductive substrate is a semiconductor light emitting device, characterized in that the metallic substrate containing any one of Au, Ni, Cu and W metal. The method of claim 1, The conductive substrate is a semiconductor light emitting device, characterized in that the semiconductor substrate containing any one of Si, Ge and GaAs. The method of claim 1, The conductive substrate is a SiAl composite material substrate, characterized in that the semiconductor light emitting device. Forming a plurality of light emitting stacks including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the growth substrate; Forming a second electrode layer on the second conductive semiconductor layer; Forming a first insulating layer surrounding the plurality of light emitting stacks and the second electrode layer; Selectively removing the first insulating layer to expose a portion of the second electrode layer and the first conductive semiconductor layer; Forming a first electrode layer electrically connecting an exposed region of the first semiconductor layer and an exposed region of a second electrode layer of another neighboring light emitting stack; Forming a second insulating layer on the first electrode layer; And Stacking a conductive substrate on the second insulating layer, and removing the growth substrate. The method of claim 11, Forming the plurality of light emitting laminates, Sequentially growing the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer on a growth substrate; And Etching a portion of the grown layers until the growth substrate portion is exposed to obtain a plurality of separated light emitting laminates. The method of claim 12, And etching a portion of the plurality of light emitting stacks to expose a portion of the first conductive semiconductor layer. The method of claim 11, In the forming of the second insulating layer, the method of manufacturing a semiconductor light emitting device, characterized in that the second insulating layer is not formed on the first electrode layer located at one end of the conductive substrate. The method of claim 13, And etching a portion of the light emitting stack positioned at the other end of the conductive substrate to expose a portion of the interface between the second electrode layer and the second conductive semiconductor to the outside. Forming a plurality of light emitting stacks including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the growth substrate; Forming a second electrode layer on the second conductive semiconductor layer; Forming a first insulating layer surrounding the plurality of light emitting stacks and the second electrode layer; Selectively removing the first insulating layer to expose a portion of the second electrode layer; Forming at least one contact hole penetrating the first insulating layer, the second electrode layer, the second conductive semiconductor layer, and the active layer; Forming a first electrode layer connected to the at least one contact hole and an exposed area of the second electrode layer; Forming a second insulating layer on the first electrode layer; And Stacking a conductive substrate on the second insulating layer, and removing the growth substrate. The method of claim 16, Forming the plurality of light emitting laminates, Sequentially growing the first conductive semiconductor layer, the active layer, and the second semiconductor layer on a growth substrate; And And etching a portion of the grown layers until the portion of the growth substrate is exposed to obtain a plurality of separated light emitting laminates. The method of claim 16, In the forming of the second insulating layer, the method of manufacturing a semiconductor light emitting device, characterized in that the second insulating layer is not formed on the first electrode layer located at one end of the conductive substrate. The method of claim 18, And etching a portion of the light emitting stack positioned at the other end of the conductive substrate to expose a portion of the interface between the second electrode layer and the second conductive semiconductor to the outside. Device manufacturing method.

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