KR100965373B1 - 감광성 금속 나노입자 및 이를 이용한 도전성 패턴형성방법 - Google Patents
감광성 금속 나노입자 및 이를 이용한 도전성 패턴형성방법 Download PDFInfo
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- KR100965373B1 KR100965373B1 KR1020030037040A KR20030037040A KR100965373B1 KR 100965373 B1 KR100965373 B1 KR 100965373B1 KR 1020030037040 A KR1020030037040 A KR 1020030037040A KR 20030037040 A KR20030037040 A KR 20030037040A KR 100965373 B1 KR100965373 B1 KR 100965373B1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/117—Free radical
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- Ceramic Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Conductive Materials (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims (11)
- 금속나노입자의 표면상에, 말단 반응성기 A를 포함하고 하기 화학식 1로 나타내어지는 사이올(thiol)계 또는 이소시아나이드(isocyanide)계 화합물로 이루어진 자기분자조립층을 형성하고, 상기 말단반응성기 A에 감광성기를 도입한 감광성 금속 나노입자:[화학식 1]X-R-(A)a(상기 식에서, X는 HS 또는 NC이고, R은 탄소원자 2 내지 50인 다가의 유기기이며, A는 OH, COOH, COCl 또는 NH2이고, a는 1 내지 4의 정수이다).
- 제 1항 또는 제 2항에 있어서, 사이올계 화합물은 시스타민(디히드로클로라이드), 6-머켑토-1-헥산올, 4,4′-사이오바이페놀, 2-머켑토에탄올 (2-mercaptoethanol), 1-머켑토-2-프로판올 (1-mercapto-2-propanol), 3-머켑토-1-프로판올 (3-mercapto-1-propanol), 3-머켑토-2-부탄올 (3-mercapto-2-butanol), 3-머켑토-1,2-프로판디올 (3-mercapto-1,2-propanediol), 2,3-디머켑토-1-프로판올 (2,3-dimercapto-1-propanol), 디사이오쎄레톨 (dithiotheretol), 디사이오에리쓰리톨 (dithioerythritol), 1,4-디사이오-L-쎄레톨 (1,4-dithio-L-theretol), 3-(메틸사이오)1-프로판올 (3-(methylthio)-1-propanol), 4-(메틸사이오)1-부탄올(4-(methylthio)-1-butanol), 3-(메틸사이오)-1-헥산올 (3-(methylthio)-1-hexanol), 2,2'-사이오디에탄올 (2,2'-thiodiethanol), 2-히드록시에틸디설파이드 (2-hydroxyethyl disulfide), 3,6-디티아-1,8-옥탄디올 (3,6-dithia-1,8-octanediol), 3,3'-사이오디프로판올 (3,3'-thiodipropanol), 3-메틸사이오-1,2-프로판디올 (3-methylthio-1,2-propanediol), 3-에틸사이오-1,2-프로판디올(3-ethylthio-1,2-propanediol), D-글루코즈디에틸머켑탈 (D-glucose diethyl mercaptal), 1.4-디사이엔-2,5-디올 (1,4-dithiane-2,5-diol), 1,5-디사이아사이클로옥탄-3-올(1,5-dithiacyclooctan-3-ol), 또는 4-히드록시사이오페놀 (4-hydroxythiophenol) 이고, 상기 이소시아나이드계 화합물은 4-아미노벤질시아나이드 (4-aminobenzyl cyanide), 4-시아노페놀 (4-cyanophenol), 또는 4'-히드록시-4-비페닐카르보니트릴 (4'-hydroxy-4-biphenylcarbonitrile)인 것을 특징으로 하는 금속나노입자.
- 제1항에 따른 감광성 금속나노입자, 광개시제 및 유기용매를 포함하는 패턴형성용 감광성 조성물.
- 제4항에 있어서, 상기 조성물에 전도성 또는 비전도성의 고분자를 추가로 포함하는 것을 특징으로 하는 감광성 조성물.
- 제5항에 있어서, 상기 전도성 고분자는 폴리아세틸렌(polyacetylene: PA), 폴리사이오펜(polythiophene: PT), 폴리(3-알킬)사이오펜[poly(3-alkyl)thiophene: P3AT], 폴리피롤(polypyrrole:PPY), 폴리이소시아나프탈렌(polyisothianapthelene: PITN), 폴리에틸렌 디옥시사이오펜(polyethylene dioxythiophene: PEDOT), 폴리파라페닐렌 비닐렌(polyparaphenylene vinylene: PPV), 폴리(2,5-디알콕시)파라페닐렌 비닐렌 [poly(2,5-dialkoxy)paraphenylenevinylene], 폴리파라페닐렌 {polyparaphenylene: PPP), 폴리헵타디엔(polyheptadiyne: PHT), 폴리(3-헥실)테오펜 [poly(3-hexyl)thiophene: P3HT], 및 폴리아닐린 [polyaniline: PANI]으로 이루어진 군으로부터 선택된 1 또는 2 이상의 고분자인 것을 특징으로 하는 감광성 조성물.
- 제5항에 있어서, 상기 비전도성 고분자는 폴리에스테르, 폴리카보네이트, 폴리비닐알코올, 폴리비닐부티랄, 폴리아세탈, 폴리아릴레이트, 폴리아마이드, 폴리아미드이미드, 폴리에테르이미드, 폴리페닐렌에테르, 폴리페닐렌설파이드, 폴리에테르설폰, 폴리에테르케톤, 폴리프탈아마이드, 폴리에테르니트릴, 폴리에테르설폰, 폴리벤즈이미다졸, 폴리카보디이미드, 폴리실록산, 폴리메틸메타크릴레이트, 폴리메타크릴아마이드, 니트릴고무, 아크릴 고무, 폴리에틸렌테트라플루오라이드, 에폭시 수지, 페놀 수지, 멜라민 수지, 우레아 수지, 폴리부텐, 폴리펜텐, 에틸렌-프로필렌 공중합체, 에틸렌-부텐-디엔 공중합체, 폴리부타디엔, 폴리이소프렌, 에틸렌-프로필렌-디엔 공중합체, 부틸고무, 폴리메틸펜텐, 폴리스티렌, 스티렌-부타디엔 공중합체, 수첨스티렌-부타디엔 공중합체, 수첨폴리이소프렌 및 수첨폴리부타디엔로 이루어진 군으로부터 선택된 1 또는 2 이상의 고분자인 것을 특징으로 하는 감광성 조성물.
- 제4항에 있어서, 광개시제는 아세토페논계 화합물; 벤조인계 화합물; 벤조페논계 화합물; 티옥사톤계 화합물이거나; 혹은 1-페닐-1,2-프로판디온-2-(O-에톡시카보닐)옥심, (1-Phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)oxime), 2,4,6-트리메틸벤조일 디페닐 포스핀옥시드 (2,4,6-Trimethyl benzoil diphenyl phosphine oxide), 메틸페닐글리옥실레이트 (Methyl phenyl glyoxylate), 벤질(Benzil), 9,10-페나프탈렌퀴논(9,10-Phenanthlenequione), 캠포퀴논(Camphorquinone), 디벤조수베론(Dibenzosuberone), 2-에틸안트라퀴논(2-Ethyleanthraquinone), 4,4'-디에틸이소프탈로페논(4,4'-Diethylisophthalophenone), 또는 3,3',4,4'-테트라(t-부틸페록시카르보닐)벤조페논 (3,3',4,4'-tetra(t- butylperoxycarbonyl) benzophenone)인 것을 특징으로 하는 감광성 조성물.
- 제4항에 있어서, 추가로 트리에탄올아민 (triethanolamine), 메틸디에탄올아민 (methyldiethanolamine), 트리이소프로필아민 (triisopropanolamine), 4,4'-디메틸아미노벤조페논 (4,4'-dimethylamino benzophenone), 4,4'-디에틸아미노 벤조페논 (4,4'-diethylamino benzophenone), 2-디메틸아미노 에틸벤조에이트 (2-dimethylamino ethylbenzoate), 4-디메틸아미노 에틸벤조에이트 (4-dimethylamino ethylbenzoate), 2-n-부틸에틸-4-디메틸아미노벤조에이트 (2-n-buthoxyethyl-4-dimethylaminobenzoate), 4-디메틸아미노 이소아밀벤조에이트 (4-dimethylamino isoamylbenzoate), 4-디메틸아미노-2-에틸헥실 벤조에이트 (4-dimethylamino-2-ethylhexyl benzoate), 및 에오신 Y (Eosin Y)로 이루어진 군으로부터 선택된 1 또는 2 이상의 화합물을 광개시조제로서 포함하는 감광성 조성물.
- ⅰ) 제4항 내지 제10항 중 어느 한 항에 따른 감광성 조성물을 기판에 코팅 및 건조하는 단계 및; ⅱ) 이를 선택적으로 노광한 후 현상하는 단계를 포함하는 도전성 패턴형성방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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KR1020030037040A KR100965373B1 (ko) | 2003-06-10 | 2003-06-10 | 감광성 금속 나노입자 및 이를 이용한 도전성 패턴형성방법 |
US10/734,138 US7166412B2 (en) | 2003-06-10 | 2003-12-15 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same |
EP04253345.5A EP1500978B1 (en) | 2003-06-10 | 2004-06-04 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same |
JP2004172182A JP4384554B2 (ja) | 2003-06-10 | 2004-06-10 | 感光性金属ナノ粒子およびこれを含む感光性組成物、ならびにその感光性組成物を用いた導電性パターン形成方法 |
CN2004100484595A CN1573543B (zh) | 2003-06-10 | 2004-06-10 | 光敏金属纳米颗粒和用其形成导电图案的方法 |
US11/505,324 US7473513B1 (en) | 2003-06-10 | 2006-08-17 | Photosensitive metal nanoparticle and method of forming conductive pattern using the same |
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KR1020030037040A KR100965373B1 (ko) | 2003-06-10 | 2003-06-10 | 감광성 금속 나노입자 및 이를 이용한 도전성 패턴형성방법 |
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KR100965373B1 true KR100965373B1 (ko) | 2010-06-22 |
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US (2) | US7166412B2 (ko) |
EP (1) | EP1500978B1 (ko) |
JP (1) | JP4384554B2 (ko) |
KR (1) | KR100965373B1 (ko) |
CN (1) | CN1573543B (ko) |
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US10983433B2 (en) | 2015-08-21 | 2021-04-20 | Samsung Electronics Co., Ltd. | Photosensitive compositions, preparation methods thereof, and quantum dot polymer composite prepared therefrom |
US11958998B2 (en) | 2016-08-09 | 2024-04-16 | Samsung Electronics Co., Ltd. | Compositions, quantum dot polymer composites prepared therefrom, and devices including the same |
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Also Published As
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US20040253536A1 (en) | 2004-12-16 |
JP2005004211A (ja) | 2005-01-06 |
US7473513B1 (en) | 2009-01-06 |
CN1573543A (zh) | 2005-02-02 |
CN1573543B (zh) | 2010-05-12 |
EP1500978B1 (en) | 2014-04-23 |
EP1500978A2 (en) | 2005-01-26 |
JP4384554B2 (ja) | 2009-12-16 |
KR20040106604A (ko) | 2004-12-18 |
EP1500978A3 (en) | 2007-12-05 |
US7166412B2 (en) | 2007-01-23 |
US20080311513A1 (en) | 2008-12-18 |
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