KR100961942B1 - Thin-Film Transistor Array Substrate for X-Raxy Detector and Manufacturing Method Thereof - Google Patents

Abstract

More specifically, in the method for manufacturing a thin film transistor array substrate according to the embodiment of the present invention, a gate line having a gate electrode is formed on an insulating substrate, and a gate insulating film covering the gate line is formed. Subsequently, a semiconductor layer is formed on the gate insulating film, and a common signal line separated from the data line, the drain electrode, and the data line intersecting the gate line is formed. Subsequently, a first pixel electrode for the storage capacitor is formed on the gate insulating film, and a protective film and an interlayer insulating film of the photosensitive organic material are sequentially stacked thereon. Subsequently, the interlayer insulating film is exposed and developed to form an opening exposing the protective film on the first pixel electrode for the storage capacitor, and then the protective film is patterned to form a contact hole exposing the drain electrode. Subsequently, a second pixel electrode for the storage capacitor is formed to be connected to the drain electrode and overlap the first pixel electrode for the storage capacitor with a protective film therebetween in the opening.

X-ray, photoconductor, photosensitive, organic material

Description

Thin film transistor array substrate for X-ray amplifier and its manufacturing method {a thin film transistor array panel for X-ray detector and a method for manufacturing the same}

1 is a layout view showing a structure of a thin film transistor array substrate for an X-ray detector including a photoconductive semiconductor layer according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II-II 'of FIG. 1;

3A, 4A, 5A, 6A, 7A, and 8A are layout views of a thin film transistor array substrate in an intermediate process of manufacturing a thin film transistor array substrate for an X-ray detector according to an embodiment of the present invention;

3B is a cross-sectional view taken along the line IIIb-IIIb ′ in FIG. 3A;

4B is a cross-sectional view taken along the line IVb-IVb ′ in FIG. 4A and is a cross-sectional view showing the next step in FIG. 3B;

FIG. 5B is a cross-sectional view taken along the line Vb-Vb ′ in FIG. 5A and is a cross-sectional view showing the next step in FIG. 4B;

FIG. 6B is a cross-sectional view taken along the line VIb-VIb ′ in FIG. 6A and is a cross-sectional view showing the next step in FIG. 5B;

FIG. 7B is a cross-sectional view taken along the line VIIb-VIIb ′ in FIG. 7A and illustrating the next step in FIG. 6B;

FIG. 8B is a cross-sectional view taken along the line VIIIb-VIIIb 'of FIG. 8A and illustrates the next step of FIG. 7B.

The present invention relates to a thin film transistor array substrate and a method of manufacturing the same, and more particularly, to a thin film transistor array substrate and a method of manufacturing the same as a substrate of an X-ray detector used for detecting X-rays (X-ray).

X-ray detectors used to detect X-rays also use a thin film transistor as a switching element, and thus include a substrate having a thin film transistor array.

The thin film transistor array substrate of the X-ray detector includes an optical conductive film that generates an electrical signal, that is, an electron and a hole pair, internally in proportion to the signal intensity of external radiation such as incident electric waves or magnetic waves. Each pixel having a matrix array is provided with a storage capacitor that accumulates electric charges generated in the photoconductive film and is electrically connected to the thin film transistor. The gate line and the thin film transistor which transfer a scan signal or a scanning signal to control the thin film transistor are disposed. According to the control signal of the data lines for transferring the charge accumulated in the storage capacitor to the outside are electrically connected to the thin film transistors, respectively, and cross each other.                         

The thin film transistor array substrate of the X-ray detector is typically repeated by a photolithography process using a mask to complete the patterning of wirings or thin films or patterning insulating layers between layers to form contact holes that expose the wirings or thin films. It is desirable to minimize the number of etching processes to minimize the number of etching processes.

SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film transistor array substrate for an X-ray detector and a method of manufacturing the same, which can minimize manufacturing costs.

In order to solve this problem, an interlayer insulating film having a contact hole exposing a part of a wiring only by a photolithography process is formed on a thin film transistor array substrate for an X-ray detector according to the present invention.

More specifically, a gate line having a gate electrode is formed on the insulating substrate, and a gate insulating film covering the gate line is formed. Subsequently, a semiconductor layer is formed on the gate insulating film, and a common signal line separated from the data line, the drain electrode, and the data line intersecting the gate line is formed. Subsequently, a first pixel electrode for the storage capacitor is formed on the gate insulating film, and a protective film and an interlayer insulating film of the photosensitive organic material are sequentially stacked thereon. Subsequently, the interlayer insulating film is exposed and developed to form an opening exposing the protective film on the first pixel electrode for the storage capacitor, and then the protective film is patterned to form a contact hole exposing the drain electrode. Subsequently, a second pixel electrode for the storage capacitor is formed to be connected to the drain electrode and overlap the first pixel electrode for the storage capacitor with a protective film therebetween in the opening.

In this case, the first or second pixel electrode for the storage capacitor is preferably formed of a transparent conductive material.

In addition, a contact auxiliary member connected to the end of the gate line or the data line may be further formed on the same layer as the first or second pixel electrode for the storage capacitor.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right on" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Now, a thin film transistor array substrate for an X-ray detector and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, the structure of a thin film transistor array substrate for an X-ray detector according to an embodiment of the present invention will be schematically described with reference to FIGS. 1 and 2.

1 is a layout view schematically illustrating a structure of a thin film transistor array substrate for an X-ray detector according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. 1.

An upper conductive film made of a conductive material of aluminum or an aluminum alloy having a low specific resistance and a lower conductive film 201 made of chromium, molybdenum or molybdenum alloy, tantalum or titanium, etc. having excellent contact properties with other materials on the insulating substrate 110 ( A plurality of gate lines 121 formed of 202 are formed. The plurality of branches 123 of the gate lines 121 form the gate electrode 123 of the thin film transistor. The portion 125 positioned near one end of the gate line 121 is connected to an output terminal of an external gate driving circuit and transmits a gate signal or a scanning signal of the driving circuit rotor to the gate line 121.

On the substrate 110, a gate insulating layer 140 made of silicon nitride (SiN _x ) covers the gate line 121.

A linear semiconductor 150 made of hydrogenated amorphous silicon or the like is formed on the gate insulating layer 140 of the gate electrode 123, and n + hydrogenation in which silicide or n-type impurities are heavily doped is formed on the semiconductor 150. A plurality of pairs of ohmic contacts 163 and 165 made of amorphous silicon are formed. Each pair of ohmic contacts 163 and 165 are separated from each other with respect to the corresponding gate electrode 123.                     

A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the ohmic contacts 163 and 165 and the gate insulating layer 140. The data line 171 and the drain electrode 175 include a conductive film made of a conductive material having low resistance and excellent chemical and physical properties, such as chromium, molybdenum, molybdenum alloy, titanium tantalum, or the like. The data line 171 mainly extends in the vertical direction and crosses the gate line 121. The plurality of branches 173 of the data line 171 extends to an upper portion of one of the pair of ohmic contacts 163 and 165 to form the source electrode 173 of the thin film transistor. The portion 179 located near one end of the data line 171 is connected to an output terminal of an external data driving circuit and transmits an image signal of the driving circuit rotor to the data line 171. The drain electrode 175 of the thin film transistor is separated from the data line 171 and positioned above the ohmic contact 165 opposite to the source electrode 173 with respect to the gate electrode 123. In addition, a common signal line 174 is formed on the same layer as the data line 171 and is extended in the vertical direction apart from the data line 171 and is grounded from the outside or the common voltage is transmitted.

The first pixel electrode for the storage capacitor, which is connected to the common signal line 174 in the pixel region defined by the gate line 121 and the data line 171 and stores charge generated in the photoconductive semiconductor layer (not shown). 191 is formed. The first pixel electrode 191 for the storage capacitor is generally made of a transparent conductive material such as indium zinc oxide (IZO) or indium tin oxide (ITO). The data contact auxiliary member 199 is formed on the same layer as the first pixel electrode 191 for the storage capacitor and is connected to the end portion 179 of the data line and is substantially connected to the output terminal of the data driving circuit.

A protective film 810 made of silicon nitride or silicon oxide is disposed on the data line 171, the drain electrode 175, the first pixel electrode 191 for the storage capacitor, the data contact auxiliary member 199 and the exposed semiconductor 150. Formed.

In the passivation layer 810, contact holes 185 and 187 exposing the drain electrode 175 and the data contact auxiliary member 199 are formed, and the end portion 125 of the gate line 121 together with the gate insulating layer 140 is formed. The contact hole 182 which exposes the () is formed.

An interlayer insulating layer 820 made of a photosensitive organic insulating material is formed on the passivation layer 810.

A contact hole 189 is formed in the interlayer insulating layer 820 to expose the data contact auxiliary member 199, and a contact hole 183 is exposed along the gate insulating layer 140 to expose the end portion 125 of the gate line 121. Is formed. In addition, an opening 181 is formed in the interlayer insulating layer 820 to expose the drain electrode 175 and to expose the passivation layer 810 on the first pixel electrode 191 for the storage capacitor.

A second pixel electrode 192 for the storage capacitor is formed on the interlayer insulating layer 820 or the passivation layer 810 and is electrically connected to the drain electrode 175 through the contact hole 185 and positioned in the pixel region. . In addition, a gate contact auxiliary member 192 connected to the end portion 125 of the gate line 171 is formed on the interlayer insulating layer 820 through contact holes 182 and 183, respectively. Here, the second pixel electrode 192 for the storage capacitor and the gate contact auxiliary member 192 are made of indium tin oxide (ITO) or indium zinc oxide (IZO), which are transparent conductive materials. In this case, the first pixel electrode 191 and the second pixel electrode 192 overlap each other with the passivation layer 810 interposed therebetween to form a storage capacitor, and the passivation layer 810 has a dielectric function. In this case, the second pixel electrode 192 overlaps the gate line 121 and the data line 171 with the interlayer insulating layer 820 of the photosensitive organic insulating material interposed therebetween to maximize the aperture ratio of the pixel. .

Although not shown, a photoconductive semiconductor layer that generates electrons or holes is formed on the entire surface of the second pixel electrode 192 for the storage capacitor, and a bias overlapping the photoconductive semiconductor layer and the insulating layer therebetween. An electrode is formed.

In the thin film transistor array substrate for the X-ray detector according to the embodiment of the present invention, the photoconductive semiconductor layer (not shown) is electrically internally proportional to the signal intensity of external radiation such as incident electric waves or magnetic waves. Generate signals ie electron and hole pairs. That is, the photoconductive semiconductor layer serves as a converter that detects an external signal, especially X-rays, and converts the signal into an electrical signal. The charge generated by the X-ray is applied to the second pixel electrode 192 positioned below the photoconductive semiconductor layer by the voltage Ev applied to a bias electrode (not shown) positioned above the photoconductive semiconductor layer. These charges are collected and stored in the storage capacitor including the first pixel electrode 191 and the second pixel electrode 192.                     

Next, a method of manufacturing the thin film transistor substrate according to the exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 and FIGS. 3A to 8B.

First, as shown in FIGS. 3A and 3B, by using a target including Al-Nd containing 2 at% of Nd in the lower conductive film 201 of chromium and an aluminum alloy metal on the substrate 110. The upper conductive film 202 is sequentially stacked and patterned by sputtering to a thickness of about 2,500 Å to form a gate line 121 having a tapered structure having an inclination angle in the range of 20 to 80 °.

Next, as shown in FIGS. 4A and 4B, three layers of a gate insulating layer 140 made of silicon nitride, a semiconductor layer made of amorphous silicon, and a doped amorphous silicon layer are successively laminated, and the semiconductor layer is formed by a patterning process using a mask. The doped amorphous silicon layer is patterned to form a linear semiconductor 150 and the doped amorphous silicon layer 160 on the gate insulating layer 140 facing the gate electrode 123. Here, the gate insulating film 140 is preferably formed by stacking silicon nitride in a thickness of about 2,000 to 5,000 Pa at a temperature range of 250 to 1500 ° C.

Next, as illustrated in FIGS. 5A to 5B, a conductive film made of aluminum, an aluminum alloy, molybdenum, molybdenum alloy, chromium, or the like is laminated by sputtering to a thickness of about 2,500 kPa, and then a photo process using a mask. Patterning to form a plurality of data lines 171 and a plurality of drain electrodes 175 and a plurality of common signal lines 174 that cross the gate line 121. Each data line 171 includes a source electrode 173 extending to the upper portion of the doped amorphous silicon layer 160. The drain electrode 175 is separated from the data line 171 and faces the source electrode 173 around the gate electrode 123.

Subsequently, portions of the doped amorphous silicon layer 160 that are not covered by the data line 171 and the drain electrode 175 are removed, so that each of the linear doped amorphous silicon layers 160 is formed around the gate electrode 123. The two resistive contact members 163 and 165 are separated, while the portion of semiconductor 150 underneath is exposed. Subsequently, it is preferable to perform oxygen plasma to stabilize the exposed part surface of the semiconductor 150.

Next, as shown in FIGS. 6A and 6B, the transparent conductive material is stacked and patterned by a photolithography process using a mask to contact the first pixel electrode 191 for the storage capacitor and the end portion 179 of the data line. The contact assistant 199 is formed. In this case, the auxiliary member 196 that contacts the end portion 176 of the common signal line 174 is also formed.

7A and 7B, the data line 171, the drain electrode 175, the common signal line 174, the first pixel electrode 191 for the storage capacitor and the data contact auxiliary member 199 are formed. The protective film 810 is formed by stacking silicon nitride on the gate insulating layer 140, and the interlayer insulating film 820 is formed by stacking a photosensitive organic insulating material such as BCB, PFCB, acrylic, polyimide, or the like. do. In this case, the passivation layer 810 has a dielectric function of the storage capacitor, and has a function of preventing the organic material formed thereafter from contacting the semiconductor 150 in order to secure the characteristics of the thin film transistor. Subsequently, the interlayer insulating layer 820 of the photosensitive organic material is exposed and developed by a photo process to expose the opening 181 that exposes the passivation layer 810 of the pixel region, the end portion 125 of the gate line, the data contact auxiliary member 199 and the contact. Contact holes 183, 186, and 189 exposing the passivation layer 810 on the auxiliary member 196 are formed. In the manufacturing method according to the embodiment of the present invention, the interlayer insulating film 820 may be formed of a photosensitive organic material to form the openings 181 and the contact holes 183, 186, and 189 using only a photolithography process. Can be omitted so that the manufacturing process can be simplified.

Subsequently, as shown in FIGS. 8A and 8B, the passivation layer 810 exposed by the photolithography process using a mask is patterned to contact the drain electrode 175, the end portion 125 of the gate line, the data contact auxiliary member 199 and the contact. Contact holes 182, 187, 184, and 185 exposing the auxiliary member 196 are formed.

 Subsequently, as shown in FIGS. 1 and 2, an aluminum front surface etching process is performed to remove the upper layer 202 of aluminum or an aluminum alloy from the end portion 125 of the gate line exposed through the contact hole 182, and then the substrate. The transparent conductive material is stacked on the upper portion of the 110 and patterned by a photolithography process using a mask to contact the second pixel electrode 192 for the storage capacitor connected to the drain electrode 175 through the contact hole 185 and the contact hole ( A gate contact auxiliary member 192 connected to the end portion 125 of the gate line is formed through 182.

In the subsequent fabrication process, an insulating film is formed to cover the second pixel electrode 192 for the storage capacitor, and then a photoconductive semiconductor such as a-Se is stacked on top of the capacitor, and a bias electrode is formed on the top of the X-ray detector. Complete

Therefore, in the thin film transistor array substrate for the X-ray detector and the manufacturing method thereof according to the present invention, by forming the interlayer insulating film with a photosensitive organic material, the interlayer insulating film is patterned only by a photo developing process, thereby simplifying the manufacturing process and minimizing the manufacturing cost. can do.

Claims (7)

A gate line formed on the insulating substrate and having a gate electrode, A gate insulating film covering the gate line, A semiconductor layer formed on the gate insulating film, A data line formed on the gate insulating layer to cross the gate line to define a pixel area, and at least a portion of the data line positioned on the semiconductor layer; A drain electrode which is separated from the data line with respect to the gate electrode, and at least a part of which is located above the semiconductor layer; A common signal line separated from the data line, A first pixel electrode for a storage capacitor connected to the common signal line, A protective film covering the first pixel electrode for the storage capacitor; An interlayer insulating layer formed of a photosensitive organic material on the passivation layer and having an opening exposing the passivation layer on the first pixel electrode for the storage capacitor; A second pixel electrode for a storage capacitor connected to the drain electrode and overlapping the first pixel electrode for the storage capacitor with the passivation layer therebetween in the opening; Thin film transistor array substrate for X-ray detector comprising a. In claim 1, An edge of the second pixel electrode for the storage capacitor overlaps the gate line and the data line. In claim 1, An edge of the second pixel electrode for the storage capacitor and the gate line and the data line overlap each other with the passivation layer and the interlayer insulating layer interposed therebetween, 4. The method of claim 3, And a contact auxiliary member connected to an end of the gate line or the data line and positioned on the same layer as the first or second pixel electrode for the storage capacitor. Forming a gate line having a gate electrode on the insulating substrate, Forming a gate insulating film covering the gate line; Forming a semiconductor layer on the gate insulating layer; Forming a data line crossing the gate line, a drain electrode, and a common signal line separated from the data line on the gate insulating layer; Forming a first pixel electrode for a storage capacitor on the gate insulating layer; Forming an interlayer insulating film of a protective film and a photosensitive organic material covering the first pixel electrode for the storage capacitor; Exposing and developing the interlayer insulating film to form an opening exposing the protective film on the first pixel electrode for the storage capacitor; Patterning the passivation layer to form a contact hole exposing the drain electrode; Forming a second pixel electrode for the storage capacitor connected to the drain electrode and overlapping the first pixel electrode for the storage capacitor with the passivation layer therebetween in the opening; Method of manufacturing a thin film transistor array substrate for X-ray detector comprising a. In claim 5, And the first or second pixel electrode for the storage capacitor is formed of a transparent conductive material. In claim 5, A method of manufacturing a thin film transistor array substrate for an X-ray detector further comprising forming a contact auxiliary member connected to an end of the gate line or the data line on the same layer as the first or second pixel electrode for the storage capacitor. .

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