KR100950788B1 - Sample processing device and sample processing control device - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to improve the accuracy of a function of inferring a sample processing result from a monitor value of a sample processing state, and the like, and to improve the accuracy of prediction, and furthermore, to improve the yield of a product. It is to provide a vacuum processing control device.

A function of monitoring a processing parameter of a sample, a function of estimating a processing characteristic of the sample from this monitored parameter, a function of communicating with a measuring device for measuring a processing state of the sample after processing, and information by the monitor It has a function of changing the measurement conditions by the measuring device in accordance with the processing characteristics of the sample to be estimated from.

Description

Sample processing device and sample processing control device {SAMPLE PROCESSING APPARATUS AND SAMPLE PROCESSING CONTROLLING DEVICE}

1 is a block diagram showing the overall configuration of a sample processing control device according to an embodiment of the present invention;

2 is a functional block diagram in the embodiment of FIG. 1;

3 is a longitudinal sectional view of the etching apparatus employed in the embodiment of FIG.

4 is an explanatory diagram of an example of changing measurement conditions for a wafer in the embodiment of FIG. 1;

5 is a view showing a control flow of Embodiment 1 of the present invention;

6 is a diagram showing an example of the database of Example 1;

7 is a view showing a control flow of Embodiment 2 of the present invention;

8 is a diagram illustrating an example of the database of the second embodiment.

※ Explanation of symbols for main parts of drawing

1: vacuum processing apparatus 2: plasma processing chamber

3: vacuum conveying room 5: conveying apparatus

7: cassette stand 9: measuring device

10: control unit 11: communication unit

50: host computer 110: processing characteristics estimation unit

111: processing parameter monitor

112: Etching state monitor sensor (processing state monitoring unit)
113: Etching characteristic storage database

114: etching state determination device 120: measurement adjusting unit

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample processing apparatus and a sample processing control apparatus, and more particularly, to a sample processing apparatus and a sample processing control apparatus, which are suitable for use in a processing process in a state in which processing has been refined.

BACKGROUND ART For example, an apparatus for introducing an etching gas into a vacuum processing chamber, generating a plasma discharge under a reduced pressure, and reacting radicals or ions generated in the plasma with the surface of a wafer to be processed is etched.

The dry etching apparatus which performs such a process performs an etching process under manufacturing conditions (gas flow volume, gas pressure, input electric power, etching time, etc.) called a recipe. The recipe is always kept constant in a specific manufacturing process (same process) of a semiconductor device. In addition, the process may be divided into several steps to change manufacturing conditions in each step. In the semiconductor manufacturing process, when a process with a dry etching apparatus is processed, wafer processing is performed by setting a manufacturing condition called a recipe as described above uniformly every wafer processing as described above.

In addition, while monitoring the etching conditions and etching conditions of the sample, the actual shape of the sample and the like are extracted, inspected by a measuring device, and the results are fed back to the sample processing device.

In the dry etching process in the state of recent miniaturization, reaction products of wafers and etching gases are deposited on the walls of the processing chamber, and unnecessary gases, called outgass, are generated from the deposits, and thus the environment in the processing chamber changes over time. do. In addition, the environment inside the process room is changed by the temperature change of parts related to the process room and the consumption of the parts. As such, there are various disturbance factors in the dry etching apparatus.

In addition, non-uniformity of the shape dimension of the mask formed in the lithography step, which is a preliminary step of etching, also has an important effect on the etching result. In other words, even if the etching process is performed using a constant recipe, it is difficult to obtain a constant performance due to various disturbances.

In the extraction inspection and measurement of the wafer by the measuring device, the more the measurement points, the higher the measurement accuracy. However, if the measurement accuracy is increased, the measurement takes time and the throughput decreases.

An object of the present invention is to provide a vacuum processing apparatus and a vacuum processing control apparatus capable of suppressing the influence of a sample processing condition, for example, a change in the state of a plasma.

Another object of the present invention is to improve the accuracy of the function of estimating the processing result of the sample from the monitor value of the processing state of the sample, etc. to improve the accuracy of the prediction, and furthermore to improve the yield of the product; It is to provide a vacuum processing control apparatus.

Another object of the present invention is to provide a vacuum processing apparatus and a vacuum processing control apparatus that can improve throughput while performing a sample inspection by a measuring apparatus.

Features of the present invention include a function of monitoring a processing parameter of a sample, a function of estimating a processing characteristic of the sample from this monitored parameter, a function of communicating with a measuring device for measuring a processing state of the sample after processing, It has a function which changes the measurement conditions by the said measuring apparatus according to the processing characteristic of the said sample guessed from the information by the said monitor.

Another aspect of the present invention is an etching apparatus having a function of monitoring an etching parameter and a sensor function of monitoring an etching treatment state, and having a function of communicating with a measuring apparatus for measuring etching characteristics after the etching treatment. Or it has a function which increases or decreases the measurement score by a measuring apparatus by the etching characteristic estimated by sensor information.

Another aspect of the present invention has a monitoring etching parameter, a determination program having a function of inferring an etching result based on sensor information, and a database storing data for determining, and adding a new measurement result to add a decision rule. It is to have a judgment system characterized by the fact.

Another feature of the present invention is to monitor the etching state using the function of monitoring the etching state, input it to the determination system, and instruct the measurement apparatus to increase or decrease the measurement score by the communication function from the determination result. By receiving the measurement result and reflecting the received result in the determination rule and the database, the determination system is automatically updated while the wafer is etched.

Hereinafter, embodiments of the present invention will be described.

BRIEF DESCRIPTION OF THE DRAWINGS It is a block diagram which shows the whole structure of 1st Embodiment which made the sample processing control apparatus of this invention the dry etching process control apparatus. 2 is a block diagram showing the function of the entire sample processing control apparatus. The vacuum processing apparatus 1 of the sample processing control apparatus 100 consists of two plasma processing chambers 2a and 2b, the vacuum conveyance chamber 3, and the lock chambers 4a and 4b. Plasma processing chambers 2a and 2b, pretreatment chambers 2c and 2d and lock chambers 4a and 4b are disposed around the vacuum transfer chamber 3. On the lock chambers 4a and 4b side of the vacuum processing apparatus 1, the conveying apparatus 5 which has the conveying robot 6 is arrange | positioned, and the cassette stand which can arrange | position a plurality of cassette 8 by inserting the conveying apparatus 5 of a sample again (7) is arranged. In addition, the conveying apparatus 5 is provided with the vacuum processing apparatus 1, the measuring apparatus 9, and the communication part 11 which has a communication function. The measurement result by the measuring device 9 is introduced into the control device 10, and the control device 10 transmits the measurement result to the host computer 50 via the communication line 12. Either the host computer 50 or the control device 10 equipped with the computer includes a processing characteristic estimating unit 110 having an etching characteristic estimating function as shown in FIG. 2 and a measuring adjusting unit 120 having a measuring adjusting function. Equipped. Some of these functions may be shared by the computer of the measuring apparatus 9.

The processing conditions of the wafer 32 in the plasma processing chambers 2a and 2b are adjusted in accordance with the etching characteristics estimated by the processing characteristic estimating unit 110 having the etching characteristic guessing function. In addition, the measurement adjusting unit 120 having the measurement adjusting function receives the information of the processing characteristic guessing unit 110 having the etching characteristic guessing function and controls the increase and decrease of the measurement score by the measuring device 9. 60 denotes another processing device controlled by the host computer 50.

The vacuum processing apparatus control apparatus 100 controls the etching parameters of any one of the control apparatus 10, the measuring apparatus 9, or the host computer 50 in order to realize the processing characteristic estimating unit 110 having an etching characteristic estimating function. And a processing parameter monitor portion 111 having a monitor function, an etching state monitoring sensor 112, an etching characteristic storage database 113, and an etching state determination device 114.

As the etching state monitoring sensor 112, a measurement SEM device having an shape measurement function, an optical CD measuring device, a prop inspection (electrical property inspection) device, and the like can be considered. The etching state determination device 114 is a determination system, and has a determination program having a function of guessing an etching result based on the monitored etching parameters, the sensor information, and a database storing data for determination, and adding new measurement results again. It is configured to add a decision rule.

As an arrangement example of each function, for example, the etching condition is monitored by the processing parameter monitor 111 having the etching parameter control and the monitoring function of the vacuum processing apparatus 1, and the etching state of the host computer 50 is monitored. It enters into the determination system of the determination apparatus 114. From the determination result, the measurement adjusting unit 120 having the measurement adjusting function of the host computer 50 instructs the processing apparatus 1 to change the measurement conditions in the wafer surface. The vacuum processing apparatus 1 receives this measurement result, adds a new determination rule, instructs the measurement apparatus 9 to change the measurement conditions, for example, increase or decrease the score, and determine the received result. And the wafer 32 is etched by reflecting it in the database. On the other hand, the host computer 50 automatically updates the determination system in accordance with a preset condition.

3 is a view showing a longitudinal section of a vacuum processing apparatus as an etching apparatus employed in the sample processing control apparatus of the present invention. This vacuum processing apparatus is an example of an ECR plasma etching apparatus which emits electromagnetic waves from an antenna and generates plasma in the vacuum processing chamber 20 by interaction with a magnetic field. An antenna 22 made of Al is disposed on the upper portion of the vacuum processing chamber 20 via the dielectric window 21. The antenna 22 is connected to a high frequency power source 25 through which a coaxial waveguide 23 and a matching unit 24 generate UHF electromagnetic waves having a frequency of 450 MHz in this case. The dielectric window 21 provided between the vacuum processing chamber 20 and the antenna 22 can transmit electromagnetic waves from the high frequency power supply 25. A magnetic field coil 26 (in this case, a two-stage coil) for forming a magnetic field in the vacuum processing chamber 20 is wound around the outer peripheral portion of the vacuum processing chamber 20. Below the antenna 22 in the vacuum processing chamber 20, a lower electrode 27 is provided as a sample stage for placing the wafer 32 as a sample. Plasma is generated in the processing space between the dielectric window 21 and the lower electrode 27.

The lower electrode 27 includes a high frequency bias power supply 28 for applying incident energy to the wafer 32 to ions in the plasma, and an ESC power supply 29 for electrostatic adsorption of the wafer 32 on the lower electrode 27. Connected. Although there is no restriction | limiting in particular in the frequency of the high frequency bias power supply 28, Usually, the range of 200kHz to 20MHz is used. In this case, the frequency of the high frequency bias power supply 28 is 400 kHz.

In the lower part of the vacuum processing chamber 20, an exhaust port 30 connected to the exhaust device is provided. 31 is a gas supply device for supplying a processing gas into the vacuum processing chamber 20 and is connected to a plurality of gas supply holes provided in the dielectric window 21.

As the realization of the processing parameter monitor 111 having the etching parameter control and the monitoring function, there is a sensor group for monitoring the etching parameters. These consist of a sensor group for monitoring the process amount during processing of gas flow rate, gas flow rate, gas pressure, input power, etc. supplied to a vacuum processing apparatus. These sensors are usually standard equipment for a dry etching apparatus, and are not shown here.

Moreover, the sensor group which monitors an etching process state is also provided. For example, a light emitting monitor is provided as a sensor for measuring a light emission spectrum of the plasma light, which is provided with a skylight for lighting plasma light corresponding to the plasma generation unit serving as a processing space of the vacuum processing chamber 20, and is connected to the skylight through an optical fiber. 34) Install (OES: Optical Emission Spectroscopy). As another sensor, quadrupole mass spectrometry (QMS) for analyzing the mass of plasma particles may be provided. The light emission spectrum and the like measured by these sensor groups are converted into electrical signals and input to the control device 10.

Moreover, as a cause of the etching shape change for every wafer, reaction products, such as Si chloride, may adhere to the inner wall of the vacuum processing chamber 20, and the state of a plasma may change. For example, when the reaction product attached to the inner wall is re-released and adhered to the wafer, the thickness (hereinafter referred to as "CD gain") from the design value of the processing line width increases. At the same time, the plasma emission intensity is measured with respect to the wavelength of light, that is, when the emission spectrum is measured, the change corresponding to the increase of the reaction product is measured. The aspect of change depends on the gas composition and the material to be etched, but the relationship between the CD gain and the emission spectrum of the plasma is measured in advance, and this data is recorded and held in the storage device of the control device 10.

Next, the operation of the vacuum processor control apparatus of the present invention will be described. The wafer etched in the vacuum processing apparatus 1 is a measuring device for measuring the processing line width of the side scanning type electron microscope (hereinafter referred to as "side length SEM") from the lock chamber 4a or 4b by the transfer robot 6. Is sent to (9). In the measuring apparatus 9, CD gain is measured by the measuring SEM. This measurement is performed for each wafer or every predetermined number of sheets as necessary, so that data is accumulated in the storage device in the control device 10. The CD gain has a predetermined allowable value, and the initial etching condition, that is, the etching process condition at the start of the lot processing is set so that the CD gain falls within this allowable value. Here, the number of wafers exceeding the initial etching condition is continuously processed, and if the CD gain exceeds the allowable value, the data signal is sent to the control device 10, and the control device 10 or the CD gain is within the allowable value. Etching conditions are automatically adjusted so as to enter, and the control apparatus 10 changes and adjusts the etching process conditions in the plasma processing chamber 2a or 2b of the vacuum processing apparatus. The control apparatus 10 controls the feedback (FB) control system or the feedforward (FF) control system. As a part of the etching characteristic storage database 113, the control apparatus 10 also has the database which stores the process amount in process combined with a recipe or production management information (lot number, wafer ID, etc.).

Table 1 shows the information obtained from the sensor group for monitoring the etching parameters and the sensor group for monitoring the etching treatment state and the contents thereof.

  Classification         Name              Contents    Etching Parameters (111) Pressure during etching Influence on the shape and distribution of etching High Frequency Power Dielectric Junction (tanδ) Affects the distribution of the electric field and affects the distribution of etching characteristics High Frequency Power Supply (Vpp) Voltage The state of the plasma is reflected, and when the change is made, a change in etching characteristics can be considered. Electrode temperature Temperature affects the rate. Cooling gas pressure Pressure fluctuations affect the cooling effect of the wafer Sensor Information (112) Plasma emission Detection of specific element affecting detection process of influence of sediment of wall Etch Residual Thickness Influence on shape by variation of residual film thickness

In the etching apparatus 1, an etching process is performed with respect to a wafer, and the processed wafer is conveyed to the measuring apparatus 9. As shown in FIG. Then, a measurement request of the processed wafer is made from the control device 10 of the etching apparatus 1 to the measuring device 9, and the measuring device 9 is measured from the measuring device 9 to the control device 10 of the etching apparatus 1. The result is sent. The control apparatus 10 analyzes this measurement result and transmits it to the host computer of a manufacturing line. The host computer performs predetermined processing based on this measurement result, and instructs the measurement apparatus 9 to change the measurement conditions. On the other hand, the wafer after the measurement is conveyed to the next step.

As an example of the change of the measurement conditions, for example, Fig. 4A shows an example of the increase of the measurement point in one wafer surface. As the number of measurement points increases, the distribution of etching characteristics in the wafer surface, for example, the difference in cooling temperature, can be well understood. In addition, in FIG.4 (b), regarding the measurement of the processing shape of a wafer, the measurement position in any one said said measurement point is changed from one point to many points. Multipoint measurements show the state of CD gain.

As described above, in the measurement of the wafer by the measuring device 9, the more the measurement position of the measuring point or the processing shape in the wafer surface, the higher the measurement accuracy. However, if the measurement accuracy is increased, the measurement takes time and throughput decreases. Therefore, immediately after the start of etching, it is desirable to improve the throughput by processing with the measurement accuracy as low as possible, and to monitor the change over time of the environment in the processing chamber and to appropriately increase the measurement accuracy as necessary.

Example 1

A more specific embodiment of the present invention will be described as the control flow of FIG. 5 and the O ₂ component amount characteristic database 116 (part of the etching characteristic storage database 113) of FIG. In general, the amount of O ₂ in poly-Si etching affects the shape of etching. Therefore, the relationship between the amount of O ₂ components and the shape is databased in advance. During the etching process of the wafer (502), plasma emission is irradiated by the emission monitor OES (504), and the variation in the amount of O ₂ components therein is measured (506). Thereby, the finishing of an etching shape can be anticipated. Then, referring to the database 116 of the relationship between the amount of O ₂ component and the shape shown in FIG. 6 (508), it is determined whether or not the shape is out of specification than the amount of light emitted during etching (510), and the wafer is considered to be out of specification. The shape measurement is requested to the measuring device 9 (512). Further, even if the wafer is out of standard, inspection as a routine walk is also performed by extraction inspection or the like (514). The information about each wafer of the measuring apparatus 9 is used also in the next process as needed.

O ₂ O ₂ content of components in the content of components characteristic database 116 to represent a relative value from the standard state. The measurement result in the measuring device 9 is received by communication (516, 518). Then, it is determined whether the measurement result is normal (520). Of the O ₂ content of components characteristic database 116 of Figure 6, the thick frame portion is an allowable range. If this is the case, in this example, a report is made to the host computer (522), and the host computer 50 is instructed, for example, that the processing site and cleaning operation of this processing apparatus are performed.

In addition, even if the measurement result in the measuring apparatus 9 is normal, abnormal, and when requested | required from the etching apparatus 1, all the normal extraction test results are also reflected in the database 116 of FIG. 6 (524). That is, the accuracy of the function of estimating the etching result from the monitored etching parameters and the sensor information is improved by updating the determination rule of the determination program or the database according to the measurement result. Thereby, the precision of the prediction by a determination program can be improved, and also the yield of a product can be improved. Moreover, the throughput can be improved by setting the measurement accuracy according to the etching conditions.

In this embodiment, the database and the prediction function are provided in the etching apparatus, but this function may be realized on the host computer side. Alternatively, the prediction function and the database may be integrated with the sensor to realize a line monitoring device.

[Example 2]

Embodiment 2 of the present invention will be described with the control flow of FIG. 7 and the dielectric tangent characteristic database 118 (part of the etching characteristic storage database 113) of FIG.

In general, in the UHF plasma etching apparatus, the UHF power value affects the etching uniformity (distribution characteristics in the wafer surface). Normally, the power value is constantly controlled, but the output does not all contribute to the plasma generation, and part of the power does not enter the processing chamber by reflection or the like. As an index indicating this efficiency, the dielectric tangent tan δ shown in the database of FIG. 8 is often used. This tan delta is also usually almost constant, but its value changes due to variations in the device state. Therefore, etching uniformity can be estimated by measuring tan-delta during the etching process of a wafer.

That is, during the etching process of the wafer (702), the dielectric tangent tantan of the high frequency power supply is measured (704). Thereby, the finishing of an etching shape can be anticipated. The relationship between tanδ and uniformity is referred to the dielectric tangent characteristic database 118 of FIG. 8 (706) to determine whether the uniformity is outside the allowable range than the dielectric tangent tantan (δδ) during etching (708). In the dielectric loss tangent characteristic database 118 of FIG. 8, the inside of a thick border is an allowable range. For the wafers considered to be out of the allowable range, the distribution measurement is requested to the measuring device 9 (710). In addition, inspection as a routine walk is also performed by inspection of extraction of the wafer and the like even if it is out of standard (712).

The distribution measurement is performed by increasing the measurement portion in the wafer surface in addition to the normal measurement point. The control device 10 receives the measurement results (714 to 716), determines whether the measurement results are normal (718), and again determines the uniformity by referring to the dielectric loss tangent characteristic database 118 of FIG. do. If this is the case, in this example, the host computer reports to the host computer 720, and the host computer instructs, for example, the processing site of the processing apparatus and the cleaning operation.

In addition, even if the measurement result in the measuring apparatus 9 is normal, abnormal, or when requested from the etching apparatus 1, all the normal extraction test results are also reflected in the database, and are used to improve the accuracy of the prediction ( 722).

The present invention can of course be applied to other sample processing apparatuses such as plasma CVD apparatuses, sputter apparatuses, ashing apparatuses and ion implantation apparatuses.

According to the present invention, since the processing conditions and processing conditions of the sample are monitored, feedback control or feedforward control is performed on the sample processing device or the sample measuring device, that is, the judgment rule or database of the judgment program is updated according to the measurement result of the sample. The accuracy of the function of estimating the processing result of the sample can be improved. Thereby, the precision of the prediction by a determination program can be improved, and also the yield of a product can be improved. In addition, throughput can be improved by setting the measurement accuracy according to the processing conditions of the sample.

Claims (13)

delete delete A processing parameter monitor unit for monitoring a processing parameter of the sample; A processing state monitor unit for monitoring a processing state of the sample; A processing characteristic estimating unit for estimating the processing characteristics of the sample from the processing parameters monitored by the processing parameter monitor unit and the processing states monitored by the processing state monitor unit; And A sample processing apparatus including a communication unit communicating with a measuring apparatus for measuring a characteristic after processing of the sample, Changing the measurement conditions by the measuring device according to the processing parameters and the processing characteristics estimated from the processing characteristic guessing unit, The processing parameter monitor unit monitors the etching parameters of the sample, The processing state monitor unit monitors the etching state of the sample, The processing characteristic estimation unit estimates the etching characteristics of the sample from the monitored etching parameters and the etching state, The communication unit communicates with a measuring device for measuring etching characteristics after the processing of the sample, And a measurement condition of the measuring device is changed by the etching characteristics estimated by the etching parameter and the etching state. The method of claim 3, wherein And the processing characteristic estimating unit has a determination program for estimating an etching result based on the monitored etching parameters and the etching state and a database for storing data for determining. The method of claim 4, wherein And the processing characteristic estimating unit has a determination system capable of adding a determination rule by adding a new measurement result. A processing parameter monitor unit for monitoring a processing parameter of the sample; A processing characteristic estimating unit for estimating processing characteristics of the sample from the processing parameters monitored by the processing parameter monitor; And A sample processing device comprising a communication unit communicating with a measuring device for measuring a processing state of a sample after a treatment, Changing the measurement conditions by the measuring device in accordance with the processing characteristics of the sample estimated from the processing characteristic guessing unit, A sample processing apparatus characterized by changing the measurement score in the wafer surface as a change of the measurement conditions by the measuring apparatus. A processing parameter monitor unit for monitoring a processing parameter of the sample; A processing characteristic estimating unit for estimating processing characteristics of the sample from the processing parameters monitored by the processing parameter monitor; And A sample processing device comprising a communication unit communicating with a measuring device for measuring a processing state of a sample after a treatment, Changing the measurement conditions by the measuring device in accordance with the processing characteristics of the sample estimated from the processing characteristic guessing unit, A sample processing apparatus, characterized in that the measuring position at any one measuring point is changed to one point or multiple points as a change of the measurement condition by the measuring device. A sample processing control device having a sample processing device, a measuring device and a host computer connected to each other via a communication line, And a determination system for determining the monitoring result based on a determination rule and a database, and a function of monitoring a processing state in the sample processing apparatus. The determination system instructs the measurement apparatus to change the measurement conditions based on a result of monitoring and determining the processing state of the sample in the sample processing apparatus, A sample processing control device which automatically updates the determination system while processing the sample by receiving the measurement result after the change and reflecting it in the determination rule and database. The method of claim 8, The etching state in the sample processing apparatus is monitored by using the function of monitoring the processing state, the monitor result is input to the determination system, and from the determination result, a measurement function for the measurement apparatus is determined by the communication function. A sample processing control device for automatically instructing the determination system while instructing a change and receiving the measurement result and reflecting the received measurement result in the determination rule and database while etching the sample. The method according to claim 8 or 9, A sample processing control device for changing a measurement score in a wafer surface as a change of measurement conditions by the measuring device. The method according to claim 8 or 9, A sample processing control device for changing a measurement position at any one measurement point to one or multiple points as a change of measurement conditions by the measuring device. A processing parameter monitor unit for monitoring a processing parameter of the sample; A processing state monitor unit for monitoring a processing state of the sample; A processing characteristic estimating unit for estimating the processing characteristics of the sample from the processing parameters monitored by the processing parameter monitor unit and the processing states monitored by the processing state monitor unit; And A sample processing apparatus including a communication unit communicating with a measuring apparatus for measuring a characteristic after processing of the sample, Changing the measurement conditions by the measuring device according to the processing parameters and the processing characteristics estimated from the processing characteristic guessing unit, A sample processing apparatus characterized by changing the measurement score in the wafer surface as a change of the measurement conditions by the measuring apparatus. A processing parameter monitor unit for monitoring a processing parameter of the sample; A processing state monitor unit for monitoring a processing state of the sample; A processing characteristic estimating unit for estimating the processing characteristics of the sample from the processing parameters monitored by the processing parameter monitor unit and the processing states monitored by the processing state monitor unit; And A sample processing apparatus including a communication unit communicating with a measuring apparatus for measuring a characteristic after processing of the sample, Changing the measurement conditions by the measuring device according to the processing parameters and the processing characteristics estimated from the processing characteristic guessing unit, A sample processing apparatus, characterized in that the measuring position at any one measuring point is changed to one point or multiple points as a change of the measurement condition by the measuring device.

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