KR100949248B1 - Metallurgical slurry composition using novel anticorrosive agent and polishing method using the same - Google Patents

Abstract

The present invention relates to a CMP slurry composition for metal polishing, and more particularly, at least 5% to 30% E _O of the polishing surface compared to the E _O (open circuit potential) of the polishing surface of the polishing composition without addition of a corrosion inhibitor. It relates to a slurry composition comprising a corrosion inhibitor to increase below.

According to the present invention, it is possible to provide a polishing composition that is free of organic debris without surface corrosion of the wafer to be polished.

Metal, Abrasive, CMP Slurry, Preservative, Eo, Corrosion, Debris

Description

Metal CMP slurry compositions using a novel corrosion inhibitor and a polishing method using the same {Metal CMP slurry compositions using a novel corrosion inhibitor and polishing method using the same}

The present invention relates to a composition used to form an integrated circuit device and a method for forming an integrated circuit device using the same, and more particularly, to a method and composition for planarizing a metal layer on an integrated circuit substrate using a chemical-mechanical polishing technique.

Chemical-mechanical polishing (CMP) of the metal surface fused to the circuit chip is involved, at least in part, with proper chemical treatment of the metal surface. This chemical treatment is generally associated with a delicate balance between chemical etching and surface passivation of the surface. If the degree of chemical etching is excessively high compared to surface passivation, the surface produced exhibits severe metal loss and dishing, and in severe cases the metal loss may be exacerbated by corrosion. If the surface passivation is excessively high relative to the degree of chemical etching, the metal removal rate may be too low to perform the CMP process (eg, a typical rate should be more than 1000 mW / m), or the precipitate remains on the surface and difficult to remove. do.

In CMP of metal surfaces such as aluminum or tungsten, a natural passivation layer can be formed to protect the surface from further chemical etching. In the case of aluminum, natural aluminum oxide (Al 2 O 3) may be generated. In the case of tungsten, tungsten oxide (WO3 or W2O5) can be produced (Atlas of Electrochemical Equilibria in Aqueous Soultions. M. Pourbaix 1974). The copper CMP process often presents a unique problem because the natural passivation oxide film (CuO® or Cu2O) occurs at a pH that is formed only in a small amount such that it cannot be formed or sufficient to protect the metal from external chemical etching. As a result, an external passivation or corrosion inhibitor must be added to the polishing slurry.

As mentioned above, the precise balance between the action of the chemical etchant system and the corrosion inhibitors is a major factor in the copper CMP process. Various copper corrosion inhibitors have been disclosed in the literature on the use of copper. Such documents include sulfur based systems (Ward et al., US 2005/02119571); Triazoles (Kushibe, US 3948703, Watts et al., US 5897375); Benzotriazole (Aoki et al., US 6787480); Copper corrosion inhibitors such as imidazole and quentazole (Ono et al., US 2006/01439900), aspartic acid and tolyltriazole (Siddiqui et al., US7153335) and the like. However, the indiscriminate use of such components in copper polishing compositions can result in undesirable nonspecific reactions. For example, copper corrosion inhibitors are commonly used in water treatment systems. The purpose of using copper corrosion inhibitors is to provide a rigid copper protection effect for a long time. Some strategies to achieve this goal form chemical bonds with copper to protect the surface. This strategy is undesirable for CMP processes. While copper corrosion protection is needed, the corrosion inhibitor must be able to be removed by a simple process to allow other layers to join in subsequent processes. Some corrosion inhibitors leave a film that is difficult to remove or change the wettability of the surface, making subsequent layers difficult to bond to the surface.

The present invention seeks to define the boundary between copper corrosion protection and ease of removal. First, electrochemistry provides a suitable range of action for corrosion inhibitors for CMP using metal copper and certain copper corrosion inhibitors.

It is an object of the present invention to provide a CMP slurry coating composition that is free of organic debris without surface corrosion of the wafer to be polished.

The present invention provides a CMP slurry precursor composition comprising an abrasive, a complexing agent, a corrosion inhibitor, and a liquid carrier, wherein the corrosion inhibitor does not add 5% or more to 30% of the open circuit potential of the polishing surface. It provides a CMP slurry precursor composition characterized by having a property to increase below.

The corrosion inhibitor is characterized in that the N, N-disubstituted aminomethyl benzotriazole derivative having the structure of formula (I).

T-CH2-NR1R2 (I)

(Wherein T is 1,2,3-benzotriazole or a derivative thereof, and R1 and R2 are the same or different hydroxy groups or hydroxyalkyl groups)

It is characterized in that the carbon number of the substituents R1 and R2 of the formula (I) is 0 to 12.

The corrosion inhibitor of the formula (I) is 2,2 '-[[(5-methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol and 2,2'-[[(4 It is characterized in that it is an isomer mixture of -methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol.

The corrosion inhibitor is characterized in that 0.005% by weight to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

The abrasive is characterized in that alumina or silica.

The abrasive is characterized in that from 0.1% to 20% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

The complexing agent is at least one selected from the group consisting of a carbonyl compound, a carboxylic acid and salts thereof, alcohols, and an amine-containing compound.

The complexing agent is characterized in that from 0.01% to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

The CMP slurry precursor composition is characterized in that it further comprises a pH adjuster.

The pH adjusting agent is characterized in that at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, potassium carbonate, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, citric acid, potassium phosphate.

The CMP slurry precursor composition is characterized in that it further comprises a surfactant.

The surfactant is characterized in that the zwitterionic surfactant or nonionic surfactant.

The amount of the surfactant is characterized in that from 0.01% to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

The CMP slurry precursor composition is characterized in that it further comprises a pesticide or antifoaming agent.

The insecticide or the antifoaming agent is characterized in that the isothiazolinone or polydimethylsiloxane polymer.

The pesticide is 1 to 50 ppm based on the liquid carrier and the compound dissolved or suspended therein, and the antifoaming agent is characterized in that 40 to 140 ppm relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

The liquid carrier is characterized in that it comprises ultrapure water.

In addition, the present invention provides a CMP slurry composition characterized in that the mixture of the CMP slurry precursor composition and the oxidizing agent is used before polishing.

The oxidizing agents are inorganic and organic per-compounds, bromic acid and salts thereof, nitric acid and salts thereof, chloric acid and salts thereof, chromic acid and salts thereof, iodic acid and salts thereof, iron salts, copper salts, rare earths and transition metal oxides, ferricized At least one selected from the group consisting of potassium and potassium dichromate.

The oxidizing agent is characterized in that from 0.1% to 30% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended in the carrier.

The present invention also provides a method of polishing using the CMP slurry composition.

The present invention provides a polishing composition that is free of organic debris without surface corrosion of the wafer being polished.

Hereinafter, the present invention will be described in detail with reference to the drawings showing preferred embodiments of the present invention. However, the present invention may be implemented in various forms and is not limited to the described embodiments. The examples are provided to more fully and completely disclose the invention and to convey the scope of the invention to those skilled in the art. Like numerals denote like components.

The present invention is based on a comparison of the relative open circuit potentials (E ₀ ) of slurries with and without corrosion inhibitor additives. This value is obtained by measuring the Tafel polarization generated by applying a potential in steps from -250 kV from Open Circuit Potential (OCP) to +250 kV from Open Circuit Potential. 1 shows two tapel curves. The OCP for one curve measured under condition I is denoted by E _O (I) and the OCP for one curve measured under condition II is denoted by E _O (II). This difference indicates that more energy is required to treat the surface under condition II than under condition I. The change in OCP from E _O (I) to E _O (II) indicates that the resistance to the treatment of the metal surface is stronger. This phenomenon occurs in several situations (eg, changes in the environment around the metal, such as pH). The present invention is characterized by the use of a corrosion inhibitor as an additive causing a change in surface potential.

2 shows four Tafel curves. One represents the reaction of slurry I without the addition of a corrosion inhibitor. The other three curves show the reactions of slurries II to IV with the addition of different kinds of corrosion inhibitors to slurry I. Slurry II comprises 1,2,4-triazole, slurry III comprises Irgamet 42; I-42, and slurry IV comprises tolyltriazole (TTA). The tafel curves generated by these three slurries are the highest surface potential {E _O (IV) = 1.35 × E _O (I)} in slurry IV, and the next highest surface potential is slurry III {E _O (III) = 1.15 × E _O (I)}, followed by slurry II {E _O (II) = 0.90 × E _O (I)}. This result leads to the prediction that slurry IV is the most resistant to chemical treatment and slurry II is the weakest, which is consistent with the actual results. When the patterned coupon wafer was polished by two of these slurries, the wafer polished with 1,2,4-triazole corrosion inhibitor (Slurry II, FIG. 3A) was observed with a 250x optical microscope. Significant surface damage is observed. On the other hand, wafers polished with the I-42 corrosion inhibitor (Slurry III, Fig. 3b) show little surface damage even with a 500 times optical microscope.

Although slurry IV exhibits the highest surface potential among the three corrosion inhibitors tested, the corrosion inhibitor in slurry IV binds too strongly to the copper surface leaving a residue that is difficult to remove in the copper layer (see FIG. 4). Slurry III does not leave such dregs. As a result, this data suggests that the titration E _O is in the vicinity of slurry III. More specifically, the titration E _O is preferably increased by 5% to 30% of the E _O value of the system without the corrosion inhibitor.

Corrosion inhibitors having an increased E _O value of not less than 5% and not more than 30% of the E _O value of the system without a corrosion inhibitor include N, N-disubstituted aminomethyl benzotriazole derivatives having the structure (I) It is preferable that especially carbon number of substituent R1 and R2 of following General formula (I) is 0-12. Most preferably 2,2 '-[[(5-methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol and 2,2'-[[(4-methyl-1H- It is preferable to use Irgamet 42 (I-42; Ciba), an isomer mixture of benzotriazole-1-yl) -methyl] imino] bis-ethanol.

T-CH2-NR1R2 (I)

(Wherein T is 1,2,3-benzotriazole or a derivative thereof, and R1 and R2 are the same or different hydroxy groups or hydroxyalkyl groups)

The corrosion inhibitor is typically from 0.005% by weight to 5% by weight, more preferably from 0.05% by weight to 1% by weight, most preferably based on the total weight of the liquid carrier and the compound dissolved or suspended therein. 0.1 wt% to 0.5 wt% may be used.

Slurry properties

In addition to corrosion inhibitors, suitable CMP slurries additionally include abrasives, oxidizing agents, complexing agents, and liquid carriers and may optionally include the following components: pH adjusters, surfactants, pesticides, and antifoaming agents.

abrasive

Either abrasive can be used. For example, the abrasive can be natural or synthetic, diamond (eg polycrystalline diamond), garnet. Glass, carborundum, metal oxides, carbides, nitrides and the like. The abrasive may preferably be a metal oxide. Suitable metal oxides include metal oxides selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, coformed products thereof and combinations thereof. Preferably the metal oxide is alumina or silica. Abrasive particles typically have an average particle size (average particle diameter) of about 10 nm to about 500 nm. Preferably, the abrasive particles have an average particle size of about 40 nm to about 300 nm (eg, about 100 nm to about 200 nm).

The abrasive is typically from 0.1% to 20% by weight, more preferably from 0.2% to 10% by weight, most preferably from the total weight of the liquid carrier and the compound dissolved or suspended therein. 0.5% to 5% by weight can be used.

Oxidant

The chemical oxidant may be a known suitable oxidant. Suitable oxidizing agents are inorganic and organic per-compounds, bromic acid and salts thereof, nitric acid and salts thereof, chloric acid and salts thereof, chromic acid and salts thereof, iodic acid and salts thereof, iron salts and copper salts (e.g. Nitrates, sulfates, EDTA salts, and citrates), rare earths and transition metal oxides (eg, osmium tetraoxide), potassium ferricyanide, potassium dichromate, and the like. Per-compounds (as defined in the Hawley's Condensed Chemical Dictionary) are compounds that contain one or more peroxide groups (--O--O--) or that contain elements of the highest oxidation state. Compounds comprising at least one peroxide group include, for example, hydrogen peroxide and hydrogen peroxide addition products such as urea hydrogen peroxide and percarbonates; Organic peroxides such as benzoyl peroxide, peracetic acid, di-tert-butyl peroxide, mono-persulfuric acid and salts thereof (SO ₅ ^2- ), di-persulfate and salts thereof (S ₂ O ₈ ^2- ) And sodium peroxide, but not limited thereto. Compounds containing elements having the highest oxidation state include, for example, periodic acid and its salts, perbromic acid and its salts, perchloric acid and its salts, perboric acid and its salts, and permanganic acid and their salts, but are not limited thereto. Do not. The oxidizing agent is preferably hydrogen peroxide, di-persulfuric acid and salts thereof, or iodic acid and salts thereof. CMP systems (particularly abrasive compositions) typically comprise from about 0.1% to about 30% by weight (eg, from about 0.2% to about 20%) relative to the total weight of the liquid carrier and the compound dissolved or suspended in the carrier. Wt%, from about 0.5 wt% to about 15 wt%, or from about 1 wt% to about 10 wt%).

Preferably, the oxidant is mixed with a CMP slurry precursor composition containing no oxidizing agent immediately before polishing, followed by polishing.

Complexing agent

The polishing composition optionally further comprises a chelating agent or a complexing agent. Complexing agents can be used with any chemical additive that enhances the rate of removal of the substrate layer being removed. Suitable chelating agents or complexing agents include, for example, carbonyl compounds (e.g., acetylacetonates, etc.), simple carboxylic acids and their salts (e.g. acetic acid and its salts, arylcarboxylic acids and their salts, etc.), one or more hydroxyl groups Carboxylic acid and its salts (for example, glycolic acid and its salts, lactic acid and its salts, gluconic acid and its salts, gallic acid and its salts, etc.), di-, tri-, poly-carboxylic acid and its salts ( Oxalic acid and its salts, phthalic acid and its salts, citric acid and its salts, succinic acid and its salts, tartaric and its salts, malic acid and its salts, EDTA and its salts (e.g. dipotassium EDTA), mixtures thereof Etc.), carboxylic acids and group salts comprising one or more sulfonic acid and / or phosphonic acid groups, and the like. Suitable chelating agents or complexing agents also include, for example, di-, tri- or polyalcohols (eg, ethylene glycol, pyrocatechol, pyrogallol, tannic acid, etc.) and amine-containing compounds (eg, Ammonia, amino acids, amino alcohols, di-, tri- and polyamines, etc.). The chelating agent or complexing agent depends on the type of substrate layer to be removed.

The abovementioned compounds may be present in the form of salts (eg metal salts, ammonium salts, etc.), acids or partial salts. For example, citric acid and its salts include citric acid and its mono-, di-, tri-salts; Phthalic acid and its salts include phthalic acid and its mono-salts (eg potassium hydrogen phthalate) and di-salts; Perchloric acid and salts thereof include the corresponding acid (ie, perchloric acid) and salts thereof. In addition, some compounds or reactants may serve more than one function. For example, some compounds can act as chelating and oxidizing agents (eg, iron nitrate, etc.).

The complexing agent is typically from 0.01% to 5% by weight, more preferably from 0.05% to 2% by weight, most preferably from the total weight of the liquid carrier and the compound dissolved or suspended therein. 0.1 wt% to 1 wt% may be used.

pH regulator

The polishing composition may optionally further comprise one or more components, such as pH adjusters, regulators, buffers, and the like, which help maintain the pH of the composition within the desired range. Suitable pH regulators, regulators, or buffers include, for example, sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, potassium carbonate, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, citric acid, potassium phosphate, or mixtures of these.

Surfactant

The polishing composition may optionally further comprise a surfactant to enhance polishing selectivity and / or flatness. Suitable surfactants may be used, such as cationic surfactants, anionic surfactants (eg, polyacrylates), amphoteric surfactants, nonionic surfactants, or combinations thereof. Preferably, the surfactant may be an amphoteric surfactant or a nonionic surfactant. Suitable amphoteric surfactants include ammonium carboxylate, ammonium sulfate, amine oxide, N-dodecyl-N, N-dimethylbetaine, betaine, sulfobetaine, alkylammoniopropyl sulfate, and the like. Suitable non-ionic surface active agent is 2,4,7,9-tetramethyl-5-4,7-diol ethoxylate dekin rate surface active agent, a polyoxyethylene C _{6 - 30} alkyl ether, a polyoxyethylene C _{6- 30} alkyl acid ester, a polyoxyethylene C _{6 - 30} alkyl ether, a polyoxyethylene C _{6 - 30} alkyl, cyclohexyl ether, sorbitan C _{6 - 30} alkyl ester, a polyoxyethylene sorbitan C _{6 - 30} alkyl ester, ethylene Acetylenic glycol surfactants such as diaminepolyoxyethylene and the like. The amount of surfactant is typically from about 0.01% to about 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

Insecticide / Defoamer

The polishing composition may optionally further comprise other ingredients such as pesticides, antifoams and the like. As a pesticide, a well-known appropriate pesticide can be used, for example, an isothiazolinone pesticide can be used. The amount of pesticide in the polishing composition is typically from about 1 ppm to about 50 ppm, preferably from about 10 ppm to about 20 ppm, based on the liquid carrier and the compound dissolved or suspended therein. As the antifoaming agent, a known appropriate antifoaming agent may be used, for example, a polydimethylsiloxane polymer may be used. The amount of antifoaming agent is typically about 40 to about 140 ppm relative to the total weight of the liquid carrier and the compound dissolved or suspended therein.

Liquid carrier

Liquid carriers are used to efficiently apply abrasives, abrasive additives, and other components dissolved or suspended to the surface of the substrate being polished (flattened). Liquid carriers are typically aqueous solution carriers and may consist solely of water, or may be water and a suitable water soluble solvent, or emulsion. Suitable water soluble solvents include alcohols such as methanol, ethanol and the like. In some embodiments the liquid carrier comprises a supercritical liquid. Preferably, the water soluble carrier consists of water, more preferably ultrapure water. The liquid carrier optionally further includes a solvent or surfactant to assist in dissolving the abrasive additive, in order to increase the amount of the abrasive additive on the substrate surface.

In the present invention, the CMP composition is brought into contact with the semiconductor wafer surface to perform polishing.

Hereinafter, the present invention will be described in more detail with reference to examples, but these examples are for illustrative purposes only and should not be construed as limiting the scope of the present invention.

Experimental Example 1

Tafel polarization: A 350 ml electrochemical cell was filled with the test slurry composition. All experiments were performed using 1 cm 2 copper specimen wafers as working electrodes, Ag / AgCl electrodes (0.197 V vs. SHE) as reference electrodes and platinum as counter electrodes. Using a 263A Potenetiostat / Galvanostat model from Princeton Applied Research, the Tafel polarization was obtained by applying a potential from -250 kV to +250 kV from the open circuit potential (OCP) at a rate of 5 kV / sec.

The results are shown in FIG.

Slurry:

Comparative Example 1 (Slurry I): 5 g of malic acid (Samjeon Chemical) was added to 845 g of ultrapure water (Ω = 18 μ-cm), and 50 g of a 20% dispersion of precipitated silica (ST-O, Nissan) was added. The dispersion was stirred for 5 minutes. The pH was adjusted to 2.1 using nitric acid. 100 g of 30% hydrogen peroxide was added and stirred for 1 minute immediately before use, followed by polishing. The results are shown in Table 1.

Comparative Example 2 (Slurry II): 5 g of malic acid (Samjeon Chemical), 200 g of 1,2,4 triazole (TCI Chemicals) 1% aqueous solution was added to 645 g of ultrapure water (Ω = 18 μ-cm), and precipitated silica (ST- 50 g of a 20% dispersion was added. The dispersion was stirred for 5 minutes. The pH was adjusted to 2.1 using nitric acid. 100 g of 30% hydrogen peroxide was added and stirred for 1 minute before use, and then ground. The results are shown in Table 1.

Example 1 (Slurry III): 5 g of malic acid (Samjeon Chemical) and 200 g of 1% aqueous solution of Irgamet 42 (Ciba) were added to 645 g of ultrapure water (Ω = 18 μ-cm), and precipitated silica (ST-O, Nissan) was added. G) 50 g of a 20% dispersion was added. The dispersion was stirred for 5 minutes. The pH was adjusted to 2.1 using nitric acid. 100 g of 30% hydrogen peroxide was added and stirred for 1 minute before use, followed by polishing. The results are shown in Table 1.

Comparative Example 3 (Slurry IV): 5 g of malic acid (Samjeon Chemical) and 200 g of 1% aqueous solution of tolyltriazole (TCI Chemicals) were added to 645 g of ultrapure water (Ω = 18 μ-cm), and precipitated silica (ST-O, Nissan Corporation) was added. ) 50 g of 20% dispersion was added. The dispersion was stirred for 5 minutes. The pH was adjusted to 2.1 using nitric acid. 100 g of 30% hydrogen peroxide was added and stirred for 1 minute before use, followed by polishing. The results are shown in Table 1.

Experimental Example 2: Wafer Polishing

The wafer patterned with 3 cm x 3 cm copper was polished using a POLI-400 polisher (G & P Technology). The slurry was polished at 120 ml / min, platen speed 100 rpm and head rotation speed 50 rpm until excess copper was removed and the results are shown in Table 1. Corrosion was confirmed by optical microscope after polishing, and organic residue was observed by SEM after polishing.

TABLE 1

causticity Organic waste Comparative Example 1 (Slurry I) Corroded none Comparative Example 2 (Slurry II) Corroded none Example 1 (Slurry III) No corrosion none Comparative Example 3 (Slurry IV) No corrosion Occur

In the drawings and specification, exemplary preferred embodiments of the present invention have been disclosed, and although specific terms are used, the terms are used only in a general and technical sense and are not used to limit the scope of the invention. The scope of the invention is defined by the following claims.

1 is a Tafel curve

FIG. 2 shows the Tafel curves of slurry I, which contain no corrosion inhibitors and different slurry, which contain different corrosion inhibitors.

Fig. 3 shows wafer surface 3 (a) (magnification: 250 times) polished with Slurry II and wafer surface 3 (b) (magnification: 500 times) polished with Slurry III.

Fig. 4 shows SEM photographs of the wafer surface polished with slurry Slurry IV (magnification: 50,000 times).

Claims (22)

A CMP slurry precursor composition comprising a liquid carrier, an abrasive, a complexing agent, and a corrosion inhibitor, wherein the open circuit potential (E ₀ ) of the polishing surface of the composition meets the following formula: 1.05e ₀ ≤ E ₀ ≤ 1.30e ₀ ... (1) Wherein E ₀ is the open circuit potential of the polishing surface of the composition to which the corrosion inhibitor is added and e ₀ is the open circuit potential of the polishing surface of the composition to which the corrosion inhibitor is not added. The CMP slurry precursor composition according to claim 1, wherein the corrosion inhibitor is a N, N-disubstituted aminomethyl benzotriazole derivative having the structure of formula (I). T-CH2-NR1R2 (I) (Wherein T is 1,2,3-benzotriazole or a derivative thereof, and R1 and R2 are the same or different hydroxy groups or hydroxyalkyl groups) The CMP slurry precursor composition according to claim 2, wherein the substituent R1 or R2 of formula (I) has 0 to 12 carbon atoms. 3. The corrosion inhibitor according to claim 2, wherein the corrosion inhibitor of formula (I) is 2,2 '-[[(5-methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol and 2,2 A CMP slurry precursor composition characterized in that it is an isomer mixture of '-[[(4-methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol. The method of claim 1, wherein the corrosion inhibitor is CMP slurry precursor composition, characterized in that 0.005% to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein. The CMP slurry precursor composition of claim 1, wherein the abrasive is alumina or silica. The CMP slurry precursor composition of claim 1, wherein the abrasive is 0.1 wt% to 20 wt% with respect to the total weight of the liquid carrier and the compound dissolved or suspended therein. The CMP slurry precursor composition according to claim 1, wherein the complexing agent is at least one selected from the group consisting of a carbonyl compound, a carboxylic acid and salts thereof, alcohols, and an amine containing compound. The CMP slurry precursor composition of claim 1 wherein the complexing agent is from 0.01% to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein. The CMP slurry precursor composition of claim 1, wherein the CMP slurry precursor composition further comprises a pH adjuster. The CMP slurry precursor according to claim 10, wherein the pH adjusting agent is at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, potassium carbonate, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, citric acid and potassium phosphate. Composition. The CMP slurry precursor composition of claim 1, wherein the CMP slurry precursor composition further comprises a surfactant. 13. The CMP slurry precursor composition of claim 12 wherein the surfactant is an amphoteric or nonionic surfactant. 13. The CMP slurry precursor composition according to claim 12, wherein the amount of the surfactant is from 0.01% to 5% by weight relative to the total weight of the liquid carrier and the compound dissolved or suspended therein. The CMP slurry precursor composition of claim 1, wherein the CMP slurry precursor composition further comprises an insecticide or an antifoaming agent. 16. The CMP slurry precursor composition according to claim 15, wherein said pesticide or antifoaming agent is isothiazolinone or polydimethylsiloxane polymer. The method of claim 15, wherein the pesticide is 1 to 50ppm based on the liquid carrier and the compound dissolved or suspended therein, the antifoaming agent is 40 to 140ppm relative to the total weight of the liquid carrier and the compound dissolved or suspended therein CMP slurry precursor composition characterized by. The CMP slurry precursor composition of claim 1 wherein the liquid carrier comprises ultrapure water. The CMP slurry composition of claim 1, wherein the CMP slurry precursor composition and the oxidant are mixed before polishing. 20. The oxidizing agent according to claim 19, wherein the oxidizing agent is inorganic and organic per-compounds, bromic acid and salts thereof, nitric acid and salts thereof, chloric acid and salts thereof, chromic acid and salts thereof, iodic acid and salts thereof, iron salts, copper salts, rare earths and CMP slurry composition, characterized in that at least one selected from the group consisting of transition metal oxide, potassium ferricyanide, potassium dichromate. 20. The CMP slurry composition according to claim 19, wherein the oxidizing agent is 0.1 wt% to 30 wt% based on the total weight of the liquid carrier and the compound dissolved or suspended in the carrier. A method of polishing using the CMP slurry composition of claim 19.

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