KR100889603B1 - 방열 기능이 향상된 조명용 발광 다이오드 모듈 - Google Patents
방열 기능이 향상된 조명용 발광 다이오드 모듈 Download PDFInfo
- Publication number
- KR100889603B1 KR100889603B1 KR20070062873A KR20070062873A KR100889603B1 KR 100889603 B1 KR100889603 B1 KR 100889603B1 KR 20070062873 A KR20070062873 A KR 20070062873A KR 20070062873 A KR20070062873 A KR 20070062873A KR 100889603 B1 KR100889603 B1 KR 100889603B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- led
- emitting diode
- light emitting
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000017525 heat dissipation Effects 0.000 title abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 31
- 239000004593 Epoxy Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract description 12
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 239000002210 silicon-based material Substances 0.000 claims abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000013329 compounding Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 3
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Led Device Packages (AREA)
Abstract
Description
Claims (5)
- 에폭시 수지 60∼70 중량%와 은(Ag) 입자 20∼25 중량%와 세라믹 입자 10∼15 중량%의 혼합물(Ag/세라믹/에폭시)로 구성된 제 1 층;방열 부재가 탑재된 메탈 PCB(Printed Circuit Board, 인쇄회로기판)로 구성된 제 2 층;골드 와이어(gold wire)에 의해 연결되어 있는 LED(Light Emitting Diode, 발광 다이오드) 소자와 PCB 패턴이 에폭시 수지 60∼70 중량%와 은(Ag) 입자 20∼25 중량%와 세라믹 입자 10∼15 중량%의 혼합물(Ag/세라믹/에폭시) 상에 일정한 간격으로 부착되어 있으며, 제 3 층의 나머지 부분에는 투명한 젤 타입의 실리콘계 물질이 충전되어 있는 제 3 층; 및실리콘과 형광체의 배합물로 구성된 제 4 층을 포함하고,상기 제 1 층 위에 상기 제 2 층이 적층되어 있고, 상기 제 2 층 위에 상기 제 3 층이 적층되어 있으며, 상기 제 3 층 위에 상기 제 4 층이 적층되어 있는 것을 특징으로 하는 방열 기능이 향상된 조명용 발광 다이오드(LED) 모듈.
- 제 1 항에 있어서,상기 제 1 층과 제 3 층의 은(Ag) 입자의 평균 직경은 20∼400 nm이고, 상기 제 1 층과 제 3 층의 세라믹 입자의 평균 직경은 30∼250 nm인 것을 특징으로 하는 방열 기능이 향상된 조명용 발광 다이오드(LED) 모듈.
- 제 1 항에 있어서,상기 제 1 층과 제 3 층의 세라믹 입자는 알루미나(Al2O3), 탄화규소(SiC) 및 질화알루미늄(AlN)으로 이루어진 군으로부터 선택되는 고열전도성 세라믹 입자인 것을 특징으로 하는 방열 기능이 향상된 조명용 발광 다이오드(LED) 모듈.
- 제 1 항에 있어서,상기 제 1 층의 Ag/세라믹/에폭시는 열전도 계수(K)가 3∼5 W/(m·K)인 것을 특징으로 하는 방열 기능이 향상된 조명용 발광 다이오드(LED) 모듈.
- 제 1 항 내지 제 4 항 중 어느 하나의 항에 있어서,상기 투명한 젤 타입의 실리콘계 물질은 상기 발광 다이오드(LED) 소자에 균질하게 도포되어 있고, 상기 실리콘과 형광체의 배합비는 0.1:9.9∼2.0:8.0이며, 상기 발광 다이오드(LED)는 청색 발광 다이오드(LED)이거나 또는 자외선(UV) 발광 다이오드(LED)인 것을 특징으로 하는 방열 기능이 향상된 조명용 발광 다이오드(LED) 모듈.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070062873A KR100889603B1 (ko) | 2007-06-26 | 2007-06-26 | 방열 기능이 향상된 조명용 발광 다이오드 모듈 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070062873A KR100889603B1 (ko) | 2007-06-26 | 2007-06-26 | 방열 기능이 향상된 조명용 발광 다이오드 모듈 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090002281A KR20090002281A (ko) | 2009-01-09 |
KR100889603B1 true KR100889603B1 (ko) | 2009-03-20 |
Family
ID=40485291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20070062873A Expired - Fee Related KR100889603B1 (ko) | 2007-06-26 | 2007-06-26 | 방열 기능이 향상된 조명용 발광 다이오드 모듈 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100889603B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100951411B1 (ko) | 2009-05-19 | 2010-04-07 | 주식회사 케이디파워 | Led 조명등 |
KR100963531B1 (ko) | 2009-12-21 | 2010-06-15 | (주) 젠텍 | 방폭용 엘이디 조명장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101023961B1 (ko) * | 2010-07-23 | 2011-03-28 | 주식회사 티솔루션 | 가로등 및 보안등용 led 등기구의 방열구조 |
KR20160018199A (ko) | 2014-08-08 | 2016-02-17 | 천광조명 주식회사 | 융착 방법을 사용한 조명용 엘이디 기판 |
KR102259559B1 (ko) * | 2020-07-09 | 2021-06-03 | (주) 엘림 | 반도체 및 디스플레이 테스트 소켓용 연성회로기판 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040068504A (ko) * | 2003-01-25 | 2004-07-31 | 남 영 김 | 발광다이오드를 이용한 램프 모듈 |
KR20050081715A (ko) * | 2004-02-16 | 2005-08-19 | 엘지이노텍 주식회사 | 발광 다이오드 램프 |
-
2007
- 2007-06-26 KR KR20070062873A patent/KR100889603B1/ko not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040068504A (ko) * | 2003-01-25 | 2004-07-31 | 남 영 김 | 발광다이오드를 이용한 램프 모듈 |
KR20050081715A (ko) * | 2004-02-16 | 2005-08-19 | 엘지이노텍 주식회사 | 발광 다이오드 램프 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100951411B1 (ko) | 2009-05-19 | 2010-04-07 | 주식회사 케이디파워 | Led 조명등 |
KR100963531B1 (ko) | 2009-12-21 | 2010-06-15 | (주) 젠텍 | 방폭용 엘이디 조명장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20090002281A (ko) | 2009-01-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9335006B2 (en) | Saturated yellow phosphor converted LED and blue converted red LED | |
US7682048B2 (en) | Lighting emitting diode lamp | |
US9217544B2 (en) | LED based pedestal-type lighting structure | |
US9055643B2 (en) | Solid state lighting apparatus and methods of forming | |
US20050199899A1 (en) | Package array and package unit of flip chip LED | |
US20110175512A1 (en) | Light emitting diode and light source module having same | |
TWI613391B (zh) | 發光二極體組件及應用此發光二極體組件的發光二極體燈泡 | |
JP2009152192A (ja) | 発光ダイオードランプ | |
KR20140118466A (ko) | 발광 디바이스 및 이를 포함하는 조명장치 | |
JP2016171147A (ja) | 発光装置および照明装置 | |
JP2007324547A (ja) | 発光ダイオード光源装置、照明装置、表示装置及び交通信号機 | |
KR101038213B1 (ko) | 고휘도 엘이디용 쾌속 방열장치 | |
KR100889603B1 (ko) | 방열 기능이 향상된 조명용 발광 다이오드 모듈 | |
JP6169829B2 (ja) | 照明装置 | |
CN102713406A (zh) | 混合光源 | |
JP2008218998A (ja) | 発光装置 | |
US9443832B2 (en) | Light emitting device, light source for illumination, and illumination apparatus | |
JP2009010308A (ja) | 発光装置 | |
CN103715338A (zh) | 发光器件 | |
KR100873458B1 (ko) | 조명용 led 모듈 | |
WO2016197957A1 (zh) | 一种led灯五金支架 | |
CN103715190A (zh) | 发光器件 | |
KR100954858B1 (ko) | 고휘도 엘이디 패키지 및 그 제조 방법 | |
KR101046750B1 (ko) | 발광 다이오드 모듈 및 그 제조 방법, 상기 발광 다이오드모듈을 구비하는 등기구 | |
KR20080092001A (ko) | 조명용 발광 다이오드 모듈 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20070626 |
|
PA0201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080421 Patent event code: PE09021S01D |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080923 Patent event code: PE09021S01D |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20090129 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20090312 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20090312 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
FPAY | Annual fee payment |
Payment date: 20120612 Year of fee payment: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20120612 Start annual number: 4 End annual number: 4 |
|
FPAY | Annual fee payment |
Payment date: 20130902 Year of fee payment: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20130902 Start annual number: 5 End annual number: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160310 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20160310 Start annual number: 8 End annual number: 8 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20171223 |