KR100849737B1 - Light emitting diode device and manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode device and a manufacturing method thereof, and more particularly, to an electrode structure of a first electrode and a second electrode and a method of forming the same in a gallium nitride (GaN) -based light emitting diode device. . A light emitting diode device according to the present invention includes a plurality of compound semiconductor layers including a first compound semiconductor layer and a second compound semiconductor layer having different polarities, and a gallium nitride (GaN) -based compound semiconductor layer stacked on a substrate. ; A first electrode on the first compound semiconductor layer; And a second electrode disposed on the second compound semiconductor layer, wherein at least one of the first electrode and the second electrode includes a first metal layer and a compound of aluminum (Al); A second metal layer positioned on the first metal layer and including aluminum; And a third metal layer positioned on the second metal layer and formed of a material having a lower chemical reactivity with aluminum than the first metal.

Description

LIGHT EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode device and a manufacturing method thereof, and more particularly, to a structure of a top transparent electrode and a method of forming the same in a gallium nitride (GaN) -based light emitting diode device.

BACKGROUND ART In general, light emitting diodes used as devices for emitting light have been spotlighted as next-generation lighting replacing incandescent bulbs or fluorescent lamps. In particular, as a blue light emitting diode using gallium nitride (GaN) has been developed, it is possible to realize all colors, and accordingly, demand in various fields is increasing. Light-emitting diodes are considered as next-generation national strategic items because they have the advantages of fast processing speed and low power consumption of semiconductors and environmentally friendly and high energy saving effect.

A general method for producing such a gallium nitride light emitting diode is as follows.

1 is a perspective view schematically showing a structure of a general light emitting diode. As shown in FIG. 1, the first semiconductor layer 11 is formed on the prepared substrate 10. The p-n junction surface 20 may be formed on the first semiconductor layer 11 by forming a second semiconductor layer 12 having a polarity opposite to that of the first semiconductor layer 11. That is, when the first semiconductor layer 11 is doped with p-type, the second semiconductor layer 12 doped with n-type is formed on the first semiconductor layer 11, and the first semiconductor layer 11 is n-type. When doped, the second semiconductor layer 12 doped in a p-type may be formed on the first semiconductor layer 11. The first metal electrode 14 is formed on the surface in contact with the second semiconductor layer 12 to flow current through the p-n junction surface 20 formed as described above. In this case, the current distribution transparent electrode 13 may be formed between the upper surface of the second semiconductor layer 12 and the first metal electrode 14 so that the current flows uniformly to the p-n junction surface 20. In addition, in order to form the second metal electrode 15, etching is performed from the second semiconductor layer 12 at the top of the device structure to a part of the first semiconductor layer 11 using a dry etching method. After etching is completed, a pattern is formed using a photolithography process and the second metal electrode 15 is formed using an electron beam deposition method or the like. A pad (not shown) is then formed for wire contact with an external power source. When current flows through the first metal electrode 14 and the second metal electrode 15 of the light emitting diode manufactured as described above, light is emitted from the p-n junction surface.

One of the important factors that determine the electrical properties of gallium nitride light emitting diodes is the ohmic characteristics of the gallium nitride semiconductor layer and the metal electrode. Poor ohmic contact results in a very high voltage required for the operation of the device, reducing the reliability of the device in the long run. Here, the ohmic junction means that two materials are bonded to each other, and the current flowing in the junction has a property that is proportional to the potential difference of the junction.

In the prior art, in forming the n-type electrode and the p-type electrode, it is common to form the electrode with a separate material according to its respective use.

The n-type electrode of the conventional light emitting device has a structure in which an electrode layer is formed on an n-type GaN layer. As a representative n-type electrode layer, multilayer electrodes based on Ti and Al are used. Examples thereof include Ti / Al, Ti / Al / Pt / Au, Ti / Al / Ni / Au, Ti / Al / Ti / Au, and the like. There is a structure. When the Ti-based electrode is applied to a gallium nitride compound semiconductor, the specific contact resistance exhibits ohmic characteristics of about 10 ⁻⁵ Pa −cm 2, which is suitable for gallium nitride based light emitting diode devices. However, these Ti-based electrodes are unstable, such as reacting with or diffusing with other materials at high temperatures, and require high temperature heat treatment to secure ohmic properties, which makes them difficult in the manufacturing process and stable characteristics of the light emitting device. . In addition, a separate pad process is required to perform a wire bonding or flip chip process, which is essential in manufacturing a package of a light emitting device.

In the case of the p-type electrode having the electrode layer formed on the p-type GaN layer, materials such as Ni / Au or ITO are used to anneal the metal thin film such as Ni / Au in an oxygen atmosphere to make it transparent. In the case of the electrode structure in which the bonding pad is formed on the transparent electrode layer, the electrode pad may be peeled off during wire bonding in the package process due to the bonding between the oxide-type transparent electrode and the metal.

The present invention is to solve the above problems, to provide an electrode that can be applied simultaneously to the n-type electrode and p-type electrode, to provide an electroluminescent device having an electrically, thermally, structurally stable electrode and a method of manufacturing the same The purpose.

In addition, an n-type electrode forms an ohmic contact, whereas a p-type semiconductor has a relatively high contact resistance, thereby providing an electroluminescent element and a method of manufacturing the same, which serve to uniformly diffuse current in the transparent electrode. For the purpose of

In order to achieve the above technical problem, a light emitting diode device according to an embodiment of the present invention includes a plurality of compound semiconductor layers including a first compound semiconductor layer and a second compound semiconductor layer of different conductivity types, and are formed on a substrate. Stacked gallium nitride (GaN) -based compound semiconductor layers; A first electrode on the second compound semiconductor layer; And a second electrode disposed on the second compound semiconductor layer, wherein at least one of the first electrode and the second electrode includes a first metal layer and a compound of aluminum (Al); A second metal layer positioned on the first metal layer and including aluminum; And a third metal layer positioned on the second metal layer and formed of a material having a lower reactivity with aluminum than the first metal. The first metal may be chromium (Cr) or tungsten (W), and the third metal layer may include hafnium (Hf), nickel (Ni), platinum (Pt), or palladium (Pd). .

In another embodiment, a method of manufacturing a gallium nitride (GaN) based light emitting diode device may include forming a gallium nitride based compound semiconductor layer on a substrate; And forming a metal electrode on the compound semiconductor layer, wherein forming the electrode comprises: forming a first metal layer; Forming a second metal layer including aluminum on the first metal layer; And forming a third metal layer on the second metal layer, the third metal layer formed of a material having a lower reactivity with aluminum than the first metal layer. After forming the electrode, the method may further include a heat treatment at a temperature of 400 to 700 ℃.

A light emitting diode device according to still another embodiment of the present invention includes a first compound semiconductor layer and a second compound semiconductor layer, and a gallium nitride (GaN) -based compound semiconductor layer stacked on a substrate; A first electrode on the first compound semiconductor layer; And a second electrode positioned on the second compound semiconductor layer, wherein at least one of the first electrode and the second electrode comprises a first metal; A second metal layer on the first metal layer, the second metal layer including a compound of a second metal and aluminum; And a third metal layer including aluminum, wherein the first metal has high reactivity with gallium (Ga) and nitrogen (N). Here, the first metal may be Cr or W, and the second metal may be Hf or Ni.

In another aspect, a method of manufacturing a light emitting diode device includes forming a gallium nitride-based compound semiconductor layer on a substrate; And forming a metal electrode on the compound semiconductor layer, wherein the forming of the electrode comprises: forming a first metal layer using a material having high reactivity with gallium (Ga) and nitrogen (N); Forming a second metal layer on the first metal layer by using a material having a high reactivity with aluminum; And forming a third metal layer including aluminum on the second metal layer. After forming the electrode, the method may further include a heat treatment at a temperature of 400 to 700 ℃.

In all the above embodiments, the conductive oxide layer may further include a conductive antioxidant layer positioned on the third metal layer, wherein the conductive antioxidant layer is one selected from the group consisting of gold (Au), silver (Ag), and aluminum (Al). It may include a substance of.

According to an embodiment of the present invention, by applying an aluminum-metal compound to a metal electrode laminated structure, an electroluminescent device having an electrically, thermally and structurally stable electrode can be manufactured, thus improving device reliability and device life. Can be increased.

In addition, in the n-type electrode, an ohmic contact is formed to increase the response speed of the device, whereas the n-type electrode has a relatively high contact resistance for the p-type semiconductor, thereby uniformly distributing current to the transparent electrode.

In addition, by introducing the structure of the electrode that can be applied to the n-type electrode and the p-type electrode, or at the same time, it is possible to improve the yield of the device due to the reduction of the process time, the process cost.

Hereinafter, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In addition, the drawings are for illustrative purposes, but are not intended to limit the invention, and therefore, the scale of the drawings may be represented differently from the actual ones for the convenience of description. When a part of a layer, film, area, plate, etc. is over another part, this includes not only the part directly above the other part but also another part in the middle. On the contrary, when a part is just above another part, it means that there is no other part in the middle.

2 (a) to 2 (d) are cross-sectional views schematically showing exemplary process steps of a light emitting diode device according to an embodiment of the present invention.

The gallium nitride-based compound semiconductor light emitting device to which the present invention is applied, as shown in FIG. 2 (a), a buffer layer (not shown) to assist the growth of a gallium nitride layer on a substrate 100 made of a sapphire or the like material. ) And the n-type gallium nitride layer 110, the active layer (not shown), and the p-type gallium nitride layer 120 are sequentially grown. As described in the prior art, the positions of the n-type gallium nitride layer 110 and the p-type gallium nitride layer 120 may be interchanged with each other, and an undoped gallium nitride layer may be further included. Such substitutions or changes will be apparent to those skilled in the art.

Meanwhile, in the case of an electrode contacting the p-type gallium nitride layer 120, the transparent electrode 130 is first formed prior to forming the metal electrode. The transparent electrode 130 is formed on the entire upper surface of the p-type gallium nitride layer 120 to serve to distribute the current supplied from the outside to the p-type gallium nitride layer 120 evenly.

Although expressed as a gallium nitride layer here, it refers to a GaN-based compound semiconductor, and those skilled in the art include a GaN-based compound semiconductor such as AlGaN, InGaN, or (In, Al) GaN, as well as a compound semiconductor composed only of GaN. Will be self explanatory.

A metal electrode is formed on the surfaces of the n-type gallium nitride layer 110 and the p-type gallium nitride layer 120 to flow current to the p-n junction surface 200 thus formed. As shown in FIG. 2B, a dry etching method is used to form the n-type metal electrode 150 on the n-type gallium nitride layer 110 disposed under the active layer and the p-type gallium nitride layer 120. As a result, etching is performed from the p-type gallium nitride layer 120 at the top of the device structure to the surface or the bottom of the n-type gallium nitride layer 110.

In addition, in the case of the transparent electrode 130, a portion of the region where the p-type electrode 140 is to be formed is patterned and etched to expose a portion of the surface of the p-type gallium nitride layer 120. This is distinguished from the formation of the metal electrode pad on the transparent electrode in the prior art, and prevents the metal pad from peeling in a subsequent process due to the interface property between the transparent electrode, which is mainly an oxide electrode (eg ITO), and the metal pad. It is effective. That is, since the metal electrode 140 to be formed next directly contacts not only the transparent electrode 130 but also the p-type gallium nitride layer 120 having excellent interfacial adhesion properties, the metal electrode in a subsequent process (for example, a wire bonding process). 140 can stably maintain the adhesive state.

Thereafter, as shown in FIG. 2 (c), a portion of the exposed n-type gallium nitride layer 110, an exposed region of the surface of the p-type gallium nitride layer 120 and a portion of the transparent electrode 130 are shown. Metal electrodes 150 and 140 are formed on the region.

After forming a metal electrode having a multilayered laminated structure to be described in detail below, heat treatment causes a diffusion reaction in the metal electrode and a diffusion reaction between the metal electrode and the lower compound semiconductor layer. In FIG. 2 (d), the interfaces of the compound semiconductor layers 120 and 110, in which the metal components are diffused from the metal electrodes 140 and 150, are indicated by reference numerals 125 and 115, respectively. Let's do it.

The structure of the metal electrode of the present invention is a multilayer stacked structure formed directly on the n-type and / or p-type gallium nitride layer 120.

3 is a cross-sectional view of a metal electrode stack structure according to an embodiment of the present invention.

Figure (a) shows a metal electrode stacked structure formed on the n-type gallium nitride layer 110, Figure (b) shows a metal electrode stacked structure formed on the p-type gallium nitride layer 120.

First, in the case of the n-type electrode 150 illustrated in FIG. 3A, that is, the electrode contacting the n-type gallium nitride layer 110, first, the first metal layer 151 is n-type gallium nitride layer 110. To form). The first metal layer 151 is made of a metal or a compound having high reactivity with the gallium element or the nitrogen element and having high reactivity with the aluminum element forming the upper metal layer. As a metal having such a characteristic, chromium (Cr) or tungsten (W) is typical.

On the first metal layer 151, a second metal layer 152 made of aluminum metal or a compound thereof (for example, Cr-Al) is formed. Aluminum metal serves as a substantial function of current injection, and may be formed as the thickest layer in the metal electrode stack to maximize its function. That is, in the drawings are shown almost the same for the thickness of each layer of the metal electrode laminated structure, in the actual implementation of the invention, it can be adjusted in a range that maximizes the function of each layer described herein, which In a self-explanatory range. Since the constituent elements of the first metal layer 151, ie, chromium and tungsten, which are in contact with the second metal layer 152, have high reactivity with aluminum elements, aluminum compounds such as chromium-aluminum compounds or tungsten may be reacted with each other in a subsequent heat treatment process. To form an aluminum compound.

Next, a third metal layer 153 formed of a material having a relatively low reactivity with aluminum is formed on the second metal layer 152. Relatively low here means lower than the metal of the first metal layer, and does not mean that the reaction with aluminum does not occur well. That is, in the heat treatment process, the aluminum element of the second metal layer 152 reacts more actively with the metal of the first metal layer 151, and the metal of the aluminum and the third metal layer 153 is local only near the interface. Will react. The aluminum-based compound layer formed at the interface between the second metal layer 152 and the third metal layer 153 serves to suppress metal diffusion from the conductive antioxidant layer 154, which will be described later, and is thermally stable. It will help to prevent structural deformations and unwanted reactions. Suitable metal elements for this function include hafnium (Hf), nickel (Ni), platinum (Pt), palladium (Pd) and the like.

In addition, the conductive anti-oxidation layer 154 may be further formed on the third metal layer 153. The conductive antioxidant layer is formed of a highly conductive metal and prevents contaminants that are likely to occur in heat treatment and other subsequent processes from penetrating into the electrode. In addition, it is preferably made of a material having excellent conductivity so that the current transmitted from the external circuit can be easily injected into the electrode. Suitable materials for this function include gold (Au), silver (Ag), aluminum (Al) and alloys thereof.

After the metal electrode having the multilayer structure is formed, a reaction between the aluminum of the second metal layer 152 and the metal element of the first metal layer 151 is induced through a heat treatment process. The heat treatment process proceeds at a temperature of about 400 to 700 ° C. to induce the desired reaction. The heat treatment atmosphere may be performed in an inert atmosphere such as nitrogen, nitrogen + oxygen, argon, and vacuum atmosphere, but is not limited thereto. In this heat treatment step, since the third metal layer 153 has a relatively low reactivity with aluminum, the second metal layer 152 reacts with the metal element of the first metal layer to form an aluminum compound layer such as a chromium-aluminum compound layer or tungsten- The aluminum compound layer is formed. As a result, most of the metal of the first metal layer 151 reacts with aluminum, thereby substantially forming an alloy layer of the first metal-aluminum.

In addition, at the interface between the n-type gallium nitride layer 110 and the first metal layer 151, the metal element and aluminum of the first metal layer are diffused into the nitrogen vacancies of the n-type gallium nitride, so that the gallium nitride-metal element (Cr, To form a compound of aluminum to increase the carrier concentration at the interface. An interface layer having an increased n-type carrier, that is, an “n + gallium nitride layer” having an increased n-type carrier relative to the n-type gallium nitride layer 110 is shown by reference numeral 115. The formation of the n + gallium nitride layer 115 facilitates the current movement between the metal electrode 150 and the gallium nitride layer 110 to exhibit excellent ohmic characteristics.

Next, the step of forming the metal electrode stacked structure of the p-type electrode 140 shown in FIG. 3B is the same as that of the n-type electrode 150 described above. That is, a first metal layer 141 made of a metal or a compound having a high reactivity with a gallium element or a nitrogen element and having a high reactivity with the aluminum element forming the upper metal layer is formed on the p-type gallium nitride layer 120, A second metal layer 142 composed of an aluminum metal or a compound thereof is formed thereon, a third metal layer 143 having relatively low aluminum reactivity is formed thereon, and a conductive antioxidant layer 144 is further formed. Thereafter, heat treatment is performed at a temperature of about 400 to 700 ° C. to induce a reaction between the aluminum of the second metal layer 142 and the metal element of the first metal layer 141.

The metal stacked structure of the p-type electrode 140 is substantially the same as the case of the n-type electrode 150 described above, but there is a difference in effect due to the difference in conductivity type of the gallium nitride layer thereunder. That is, in the case of the n-type electrode 150, the n + gallium nitride layer 115 is formed at the interface between the n-type gallium nitride layer 110 and the first metal layer 151, but in the case of the p-type electrode 140 Since the diffusion action at the interface between the p-type gallium nitride layer 120 and the first metal layer 141 has an effect of canceling and reducing the p-type carrier, the p-gallium nitride layer 125 is formed. As a result, a high energy barrier is generated at the interface between the p-type gallium nitride layer 120 and the first metal layer 141, so that a current transmitted from the outside is not directly injected into the p-gallium nitride layer 125 from the electrode. There is an effect of spreading the current evenly to the electrode.

The metal electrode stacked structure process may be applied to only one of the n-type electrode 150 and the p-type electrode 140, and preferably applied to the n-type electrode 150 and the p-type electrode 140 simultaneously. In this case, since the n-type electrode 150 and the p-type electrode 140 may be simultaneously formed through the same process step, the process cost and the process time may be reduced.

4 is a cross-sectional view of a metal electrode stack structure according to another embodiment of the present invention.

3, the figure (a) shows a metal electrode stacked structure formed on the n-type gallium nitride layer 110, the figure (b) shows a metal electrode formed on the p-type gallium nitride layer 120 The laminated structure is shown.

The stack structure of the metal electrode according to the embodiment shown in FIG. 4 is similar to the stack structure of the metal electrode according to the embodiment shown in FIG. 3, and there is a difference in the order in which the aluminum layers are formed. Hereinafter, the structure and the formation method will be described in detail.

As shown in FIG. 4A, in the case of an n-type electrode 150, that is, an electrode contacting the n-type gallium nitride layer 110, first, the first metal layer 156 is formed of the n-type gallium nitride layer ( 110) on the top. The first metal layer 156 is made of a metal or a compound having high reactivity with a gallium element or a nitrogen element. As a metal having such a characteristic, chromium (Cr) or tungsten (W) is typical.

The second metal layer 157 is formed on the first metal layer 156. The second metal layer 157 is formed of a material having high reactivity with aluminum, and hafnium (Hf) or nickel (Ni) is representative. Subsequently, a third metal layer 158 containing an aluminum element is formed on the second metal layer 157.

In addition, as in the embodiment of FIG. 3, the conductive antioxidant layer 159 may be further formed on the third metal layer 158, and the conductive antioxidant layer may include gold (Au), silver (Ag), aluminum (Al), and the like. Or an alloy thereof.

Thereafter, heat treatment is performed at a temperature of about 400 to 700 ° C. to induce a reaction between the metal element of the second metal layer 157 and the aluminum element of the third metal layer 158. By this reaction, an aluminum compound layer such as a hafnium-aluminum compound layer or a nickel-aluminum compound layer is formed. In the embodiment of FIG. 3, in the reaction with aluminum, the reactivity of hafnium is lower than that of chromium or the like, thereby showing a limited reaction with aluminum. However, in the embodiment of FIG. 4, the reactivity of hafnium is higher than that of gold. It causes an active reaction with aluminum. The aluminum-based compound layer serves to suppress the metal of the conductive antioxidant layer 159 from reacting with the first metal layer 156 or the lower gallium nitride layer, and is thermally stable, so that the electrode structure may be deformed in a subsequent process. It serves to prevent unwanted reactions.

3, at the interface between the n-type gallium nitride layer 110 and the first metal layer 156, a metal element of the first metal layer is diffused into the nitrogen vacancies of the n-type gallium nitride to form an n + gallium nitride layer ( 115).

Meanwhile, as shown in FIG. 4B, in the case of an electrode contacting the p-type electrode 140, that is, the p-type gallium nitride layer 120, the transparent electrode 130 is first formed prior to forming the metal electrode. do. The transparent electrode 130 is formed on the entire upper surface of the p-type gallium nitride layer 120 to serve to distribute the current supplied from the outside to the p-type gallium nitride layer 120 evenly.

The step of forming the metal electrode stack structure of the p-type electrode 140 of the present embodiment is also the same as that of the n-type electrode 150 described above, and as in the embodiment of FIG. 3, a portion of the transparent electrode is etched and formed thereon. do. That is, a first metal layer 146 composed of a metal or a compound having a high reactivity with the gallium element or the nitrogen element and having a high reactivity with the aluminum element forming the upper metal layer is formed on the p-type gallium nitride layer 120, A second metal layer 147 having high reactivity with aluminum metal is formed thereon, a third metal layer 148 including aluminum metal is formed thereon, and a conductive anti-oxidation layer 149 is further formed. Thereafter, heat treatment is performed at a temperature of about 400 to 700 ° C. to induce a reaction between the aluminum of the third metal layer 147 and the metal element of the second metal layer 148.

Since the effect of the p-type electrode structure of this embodiment is the same as in the case of Figure 3, the description thereof will be omitted.

In order to examine the effect of the multi-layered metal electrode structure introduced in the present invention, the gallium nitride layer and the electrode produced according to the prior art as shown in Figure 1 and the electrode using the metal laminated structure according to the embodiment of the present invention, respectively We compared the electrical properties at the interface of, which is shown in the voltage-current relationship graph of FIG.

In FIG. 5, a graph represented by (a), that is, a graph showing data values in a square form shows a current-voltage relationship at an interface between a Ti / Al electrode and an n-type gallium nitride layer of the prior art, and (b) The graph, which is a graph showing data values in the form of a circle, shows a current-voltage relationship at the interface between the Cr / Hf / Al / Au electrode and the n-type gallium nitride layer according to the embodiment of FIG. The graph represented by (c), that is, the graph displaying the data value in the form of a triangle, shows the current-voltage relationship at the interface between the Cr / Al / Hf / Au electrode and the n-type gallium nitride layer according to the embodiment of FIG. will be. In each case, a voltage of -0.5 to 0.5V was applied and the value of the current flowing therebetween was measured and expressed in a graph of 0.05V. In the graph (a), i.e., the interface using the Ti / Al electrode, the resistance value is about 16 ohms, whereas in the case of the electrodes fabricated by the embodiments of the present invention, the resistance value is about 3 ohms. It can be seen that the difference is more than five times compared to the structure. That is, it was confirmed that the ohmic characteristics can be remarkably improved when the metal electrode laminated structure according to the embodiment of the present invention was introduced into the n-type gallium nitride layer.

In addition, for the p-type electrode, the resistance at the interface is increased, but this may have the effect that the current distribution does not flow directly from the p-type electrode to the gallium nitride layer, and the current distribution is even through the current path through the transparent electrode. .

In the above, the present invention has been described with reference to the presently considered embodiments, but the present invention should not be understood as being limited to the above embodiments. Rather, it should be construed as including all modifications of the range which are easily changed by those skilled in the art from the above-described embodiment of the present invention and considered equivalent.

1 is a cross-sectional view schematically showing the structure of a general light emitting diode device, and FIGS. 2 (a) to 2 (d) are cross-sectional views schematically showing typical process steps of a light emitting diode device according to an embodiment of the present invention.

3 and 4 are cross-sectional views of a metal electrode stacked structure according to another embodiment of the present invention.

Figure 5 shows the result of comparing the ohmic junction characteristics of the LED device according to the prior art and the LED device manufactured according to the embodiment of the present invention.

Claims (19)

a gallium nitride (GaN) -based compound semiconductor layer including a plurality of compound semiconductor layers including an n-type and a p-type compound semiconductor layer, and stacked on a substrate; A first electrode on the first compound semiconductor layer of the compound semiconductor layer; And A second electrode on the second compound semiconductor layer among the compound semiconductor layers Including, Both the first electrode and the second electrode A first metal layer comprising one of chromium (Cr) and tungsten (W) and a compound of aluminum (Al); A second metal layer positioned on the first metal layer and including aluminum; A third metal layer positioned on the second metal layer; And a conductive antioxidant layer comprising one material selected from the group consisting of gold (Au), silver (Ag), and aluminum (Al), The third metal layer is formed including one metal selected from the group consisting of hafnium (Hf), nickel (Ni), platinum (Pt), and palladium (Pd), The second electrode further includes a transparent electrode positioned directly on the second compound semiconductor layer, The transparent electrode is formed to expose a portion of the second compound semiconductor layer, The first metal layer of the second electrode is formed to contact the exposed region of the transparent electrode and the second compound semiconductor layer, The first metal layer of the second electrode further comprises a p- compound semiconductor layer in the interface region in contact with the p-type compound. a gallium nitride (GaN) -based compound semiconductor layer including a plurality of compound semiconductor layers including an n-type and a p-type compound semiconductor layer, and stacked on a substrate; A first electrode on the first compound semiconductor layer of the compound semiconductor layer; And A second electrode on the second compound semiconductor layer among the compound semiconductor layers Including, Both the first electrode and the second electrode A first metal layer comprising chromium (Cr) or tungsten (W); A second metal layer disposed on the first metal layer and including at least one of hafnium (Hf) and nickel (Ni) and a compound of aluminum; A third metal layer comprising aluminum; And a conductive antioxidant layer comprising one material selected from the group consisting of gold (Au), silver (Ag), and aluminum (Al), The second electrode further includes a transparent electrode positioned directly on the second compound semiconductor layer, The transparent electrode is formed to expose a portion of the second compound semiconductor layer, The first metal layer of the second electrode is formed to contact the exposed region of the transparent electrode and the second compound semiconductor layer, The first metal layer of the second electrode further comprises a p- compound semiconductor layer in the interface region in contact with the p-type compound. delete delete delete delete delete delete delete In the manufacturing method of a gallium nitride (GaN) series light emitting diode device, Forming a gallium nitride-based compound semiconductor layer on the substrate; And Forming a metal electrode on the compound semiconductor layer Including, Forming the electrode Forming a first metal layer comprising at least one of Cr and W; Forming a second metal layer including aluminum on the first metal layer; Forming a third metal layer on the second metal layer, the third metal layer including one metal selected from the group consisting of Hf, Ni, Pt, and Pd; And Forming a conductive antioxidant layer including one material selected from the group consisting of Au, Ag, and Al on the third metal layer; Include, Forming the compound semiconductor layer Forming a first compound semiconductor layer on the substrate; Forming a second compound semiconductor layer having a conductivity type opposite to that of the first compound semiconductor layer, on the first compound semiconductor layer; Removing a portion of the second compound semiconductor layer to expose a portion of the first compound semiconductor layer, The forming of the metal electrode may simultaneously form a metal electrode layer on the exposed region of the first compound semiconductor layer and the second compound semiconductor layer. After the step of forming the electrode, the method of manufacturing a light emitting diode device further comprising the step of heat treatment at a temperature of 400 to 700 ℃. In the manufacturing method of a gallium nitride (GaN) series light emitting diode device, Forming a gallium nitride-based compound semiconductor layer on the substrate; And Forming a metal electrode on the compound semiconductor layer Including, Forming the electrode Forming a first metal layer comprising at least one of Cr and W; Forming a second metal layer including at least one of Hf and Ni on the first metal layer; Forming a third metal layer including aluminum on the second metal layer; And Forming a conductive antioxidant layer including one material selected from the group consisting of Au, Ag, and Al on the third metal layer; Include, Forming the compound semiconductor layer Forming a first compound semiconductor layer on the substrate; Forming a second compound semiconductor layer having a conductivity type opposite to that of the first compound semiconductor layer, on the first compound semiconductor layer; Removing a portion of the second compound semiconductor layer to expose a portion of the first compound semiconductor layer, The forming of the metal electrode may simultaneously form a metal electrode layer on the exposed region of the first compound semiconductor layer and the second compound semiconductor layer. After the step of forming the electrode, the method of manufacturing a light emitting diode device further comprising the step of heat treatment at a temperature of 400 to 700 ℃. delete delete delete delete delete delete delete delete

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