KR100829756B1 - Polarizer and organic light emitting display device comprising the same - Google Patents

Abstract

In order to improve contrast and visibility, the present invention includes a plurality of grids having a base and a second component comprising a first component comprising a dielectric material and a metal formed to have a predetermined pattern on the base, The first component and the second component has a concentration gradient in the thickness direction of the grid, the first component is increased in content toward both ends of the grid relative to the thickness direction of the grid, the second The component provides a polarizer having an increasing content toward the center of the grid with respect to the thickness direction of the grid, and an organic light emitting display including the same.

Description

Polarizer and organic light emitting display apparatus comprising the same

1 is a schematic perspective view showing a polarizer according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view taken along the line II-II of FIG. 1.

FIG. 3 is a graph briefly comparing the contents of the first component and the second component by thickness of the grid of FIG. 2.

4 to 9 are schematic cross-sectional views illustrating examples of a bottom emission organic light emitting diode display according to an exemplary embodiment of the present invention, and enlarged cross-sectional views of respective linear polarization layers.

10 to 20 are schematic cross-sectional views illustrating examples of a top-emitting organic light emitting diode display according to another exemplary embodiment and enlarged cross-sectional views of respective linear polarization layers.

21 and 22 are schematic cross-sectional views illustrating an example of a passive emission type bottom-emitting organic light emitting diode display according to still another exemplary embodiment and an enlarged cross-sectional view of a linear polarization layer.

23 and 24 are schematic cross-sectional views illustrating an example of a bottom emission type organic light emitting diode display of an active driving method and an enlarged cross-sectional view of a linear polarization layer according to still another embodiment of the present invention.

25 is a schematic cross-sectional view illustrating another example of a bottom emission type organic light emitting diode display according to another embodiment of the present invention.

26 and 27 are schematic cross-sectional views illustrating an example of a passive emission type top-emitting organic light emitting diode display and a linear polarization layer according to still another exemplary embodiment of the present invention.

28 and 29 are schematic cross-sectional views illustrating an example of an active driving type top emission type organic light emitting diode display and an enlarged cross-sectional view of a linear polarization layer according to another exemplary embodiment of the present invention.

<Brief description of symbols for the main parts of the drawings>

10: polarizer 11: base

12: grid 20: substrate

21: 1/4 wavelength retardation layer 22: linear polarization layer

30: organic light emitting element 31: first electrode

32: organic light emitting layer 33: second electrode

34: reflecting film 35: internal insulating film

36: separator 40: protective film

41: buffer layer 42: semiconductor layer

43: gate insulating film 44: gate electrode

45: interlayer insulating film 46: source electrode

47: drain electrode 48: passivation film

49: pixel defining layer 50: sealing member

 The present invention relates to a polarizer and an organic light emitting display including the same, and more particularly, to a polarizer for improving contrast and visibility and an organic light emitting display including the same.

Recently, display devices have been replaced by portable thin flat display devices. Among flat panel display devices, organic or inorganic light emitting display devices are attracting attention as next-generation display devices because of their advantages of having a wide viewing angle, excellent contrast, and fast response speed. In addition, an organic light emitting display device in which a light emitting layer is formed of an organic material has excellent luminance, driving voltage, and response speed, and may be multicolored, compared to an inorganic light emitting display device.

On the other hand, the flat panel display is portable and can be used outdoors, and is manufactured in a lightweight and thin form to satisfy such an object. In this case, when the image is viewed outdoors, sunlight is reflected, thereby deteriorating contrast and visibility. In particular, in the organic light emitting diode display, the reflection is severe in the metal reflective film, which is a more serious problem.

To solve this problem, a circular polarizer is disposed on one surface of the organic light emitting diode display. And such circular polarizers usually include linear polarizers having a wire grid of thin metal. At this time, the grid made of a metal material reflects external light due to the characteristics of the material, so there is a limit to improving the contrast.

The present invention can provide a polarizer capable of improving contrast and visibility of a flat panel display and an organic light emitting display including the same.

The present invention includes a plurality of grids formed to have a pattern on the base and having a predetermined pattern, the grid comprising a first component comprising a dielectric material and a second component comprising a metal, wherein the first component and the second component Has a concentration gradient in the thickness direction of the grid, and the content of the first component increases toward both ends of the grid with respect to the thickness direction of the grid, and the second component refers to the thickness direction of the grid. The polarizer which increases in content toward the center of the grid is disclosed.

In the present invention, the first component is composed of SiO x (x ≧ 1), SiN x (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, SnO 2, indium tin oxide (ITO), indium zinc oxide (IZO), ZnO, and In 2 O 3. It may include any one selected from the group.

In the present invention, the second component may be any one selected from the group consisting of Fe, Co, V, Ti, Al, Ag, Si, Cr, Mo, Ge, Y, Zn, Zr, W, Ta, Cu, and Pt. It may include.

According to another aspect of the invention, one surface of the substrate, the organic light emitting element formed on the substrate to implement an image, the sealing member formed on the organic light emitting element, the substrate, the organic light emitting element and the surface formed by the sealing member A 1/4 wavelength retardation layer formed on the substrate and the other one of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter wavelength retardation layer, and the image is realized more than the quarter wavelength retardation layer. A linear polarization layer positioned close to the direction of the direction, wherein the linear polarization layer comprises a plurality of grids having a first component comprising a dielectric material and a second component comprising a metal, wherein the first component and the The second component has a concentration gradient in the thickness direction of the grid, and the first component can go in both ends of the grid relative to the thickness direction of the grid. Increasing the amount and the second component is disclosed an organic light emitting display apparatus gradually increases the content toward the center of the grid relative to the thickness direction of the grid.

 In the present invention, the image is embodied in the direction of the substrate, the quarter-wave retardation layer is formed on the linear polarization layer, the organic light emitting element may be formed on the quarter-wave retardation layer.

In the present invention, the image is embodied in the direction of the substrate, the linear polarization layer is formed on the substrate, the quarter-wave retardation layer is formed on the linear polarization layer, and the organic light emitting element is the 1/4 It can be formed on the wavelength retardation layer.

In the present invention, the image is embodied in the direction of the substrate, the quarter wavelength retardation layer is formed on the substrate, the organic light emitting element is formed on the phase difference layer on the quarter wavelength and the linear polarization layer is It may be formed on the opposite side of the surface on which the quarter-wave retardation layer is formed of both sides of the substrate.

In the present invention, the image is embodied in the direction of the substrate, and the quarter-wave retardation layer and the linear polarization layer may be sequentially formed on opposite surfaces of both surfaces of the substrate on which the organic light emitting element is formed.

In the present invention, the image is embodied in the direction of the sealing member, the quarter-wave retardation layer is formed on the organic light emitting device, the linear polarization layer may be formed on the quarter-wave retardation layer. .

In the present invention, the image is embodied in the direction of the sealing member and may further include a protective film between the organic light emitting element and the quarter-wave retardation layer.

In the present invention, the image is embodied in the direction of the sealing member, and the quarter-wave retardation layer and the linear polarizing layer may be sequentially formed on opposite surfaces of the sealing member on which both sides of the organic light emitting element are formed. have.

In the present invention, the image is embodied in the direction of the sealing member, and the quarter-wave retardation layer is formed on a surface of the sealing member facing the organic light emitting element, and the linear polarizing layer is formed on both sides of the sealing member. The quarter wave retardation layer may be formed on an opposite side of the surface on which the quarter wave retardation layer is formed.

In the present invention, the image is embodied in the direction of the sealing member, the linear polarizing layer is formed on the surface facing the organic light emitting element of the sealing member, the quarter-wave retardation layer is the organic of the linear polarizing layer It may be formed on the surface facing the light emitting device.

In the present invention, the image is embodied in the direction of the sealing member and further includes a reflective film interposed between the substrate and the organic light emitting element, wherein the quarter-wave retardation layer is formed between the reflective film and the organic light emitting element The linear polarization layer may be formed on the organic light emitting device.

Hereinafter, with reference to the embodiments of the present invention shown in the accompanying drawings will be described in detail the configuration and operation of the present invention.

1 is a schematic perspective view illustrating a polarizer according to an exemplary embodiment of the present invention, and FIG. 2 is a partial cross-sectional view taken along the line II-II of FIG. 1. FIG. 3 is a graph briefly comparing the contents of the first component and the second component by thickness of the grid of FIG. 2.

1 and 2, the polarizer 10 includes a base 11 and a grid 12. The base 11 may be made of a transparent material. This is to allow the light generated in the display device in which the polarizer 10 is to be passed through well. To this end, the base 11 may be made of glass or flexible plastic, but is preferably formed of a material including plastic for film formation.

A plurality of grids 12 are formed on the base 11. The grid 12 may be formed to have a stripe-shaped pattern spaced apart from each other in a form of parallel lines for the purpose of polarizing only specific polarization in the electromagnetic wave. The width w of the grid 12 may be 10 to 500 nanometers and the thickness t1 may be 50 to 500 nanometers for use as a polarizer for visible light. There is a constant interval P between the plurality of grids 12. This spacing P is an important factor in determining the performance of the polarizer 10. If the distance P between the grids 12 is long compared to the wavelength of the incident light, the polarizer 10 mainly functions as a diffraction grating rather than a polarization function. On the contrary, if the spacing P between the grids 12 is shorter than the light of the incident wavelength, the grids 12 mainly perform polarization functions.

Of the optical constants, the optical constant k is an index related to light absorption. The larger the value of k, the better the polarizer absorbing light oscillating in a particular direction. Metals have been widely used in conventional grids because of their large k-values. However, the high reflectance on the surface of the metal has a limitation in improving the overall contrast of the display device due to the reflection of external light on the surface of the grid.

The grid 12 of the present invention thus comprises a first component 12a and a second component 12b. First component 12a comprises a dielectric material. The first component 13a may be formed of an insulating transparent material such as SiO x (x ≧ 1), SiNx (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, SnO 2, or the like. In addition, the first component 13a may be formed of a conductive transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), ZnO, or In 2 O 3. The second component 12b comprises a metal. The second component 12b may be formed of Fe, Co, V, Ti, Al, Ag, Si, Cr, Mo, Ge, Y, Zn, Zr, W, Ta, Cu or Pt. The first component 12a and the second component 12b have a concentration gradient in the thickness direction of the grid 12.

2 and 3, the content of the first component 12a increases toward both ends of the grid 12 based on the thickness direction of the grid 12, and the second component 12b includes the grid 12. The content increases toward the center of the grid 12 with respect to the thickness direction of the). That is, in FIG. 2, the first component 12a is mainly distributed in the portion adjacent to the top of the grid 12 and the base 11 of the grid 12, and the second component 12b is disposed in the central portion of the grid 12. ) Is mainly distributed.

In FIG. 2, when external light is incident on the upper side of the drawing, that is, the base 11, the first component 12a formed of a dielectric material increases in the direction toward the external light of the grid 12. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the direction in which external light is incident from the center direction of the grid 12 based on the thickness direction of the grid 12. As a result, interfacial reflection caused by the difference in refractive index is suppressed. When external light is incident on the grid 12, the external light is absorbed to prevent reflection of the external light.

In addition, the first component of the grid 12 increases from the center of the grid 12 toward the base 11 based on the thickness direction of the grid 12. In FIG. 2, when external light is incident to the lower part of the drawing, that is, toward the base 11, the first component 12a made of a dielectric material increases in the direction toward the external light of the grid 12. That is, the closer to the base 11, the more the content of the first component 12a formed of the dielectric material increases, and the farther from the base 11 and toward the center of the grid 12, the content of the second component 12b. This increases. The grid 12 gradually changes from an opaque metal to a dielectric material toward the base 11 direction from the center of the grid 12 with respect to the thickness direction of the grid 12. As a result, the interface reflection caused by the difference in refractive index is suppressed. When external light is incident on the grid 12, the external light is absorbed to prevent reflection of the external light.

Co-deposition or the like may be used to form the grid 12 such that the first component 12a and the second component 12b have a concentration gradient. During the co-deposition, the deposition rate of the first component 12a and the second component 12b is adjusted over time to form the grid 12 such that the content of the first component 12a and the second component 12b is inversely related. can do. At the time of co-deposition on the base 11, it is initially deposited to mainly contain the first component 12a, and gradually reduce the amount of the first component 12a and increase the second component 12b. In the middle of the deposition, the second component 12b is mainly deposited. Then, the amount of the first component 12a is increased again to deposit the main component 12a mainly in the second half of the deposition.

Particularly, only the second component 12b exists in the center direction of the grid 12 based on the thickness direction of the grid 12 to form a metal layer. The metal layer is appropriately controlled by adjusting the deposition amount and the deposition time of the second component 12b. It can be formed in thickness.

The polarizer of this invention can be used for a flat panel display apparatus, such as an organic light emitting display. In the present invention, only the organic light emitting diode display will be described. In the organic light emitting diode display of the present invention, the base 11 is not required separately. A linear polarizing layer composed of a plurality of grids 12 is directly formed on a substrate, a sealing member, or the like. Since the grid 12 of the linear polarization layer to be described later is the same as the grid 12 of the polarizer 10 described above, a detailed structure, material, formation method, and the like will be omitted.

4 is a schematic cross-sectional view of an organic light emitting diode display according to an exemplary embodiment. As shown in FIG. 4, the organic light emitting diode display according to the exemplary embodiment of the present invention includes a substrate 20 made of a transparent material, a linear polarization layer 22 formed sequentially on the substrate 20, and 1. And a 4 wavelength retardation layer 21, an organic light emitting element 30, and a sealing member (not shown).

The substrate 20 may be made of a transparent glass material mainly containing SiO 2. Although not shown, the upper surface of the transparent substrate 20 may further include a buffer layer (not shown) to block the smoothness of the substrate 20 and the penetration of impurities, and the buffer layer may be formed of SiO 2 and / or SiN x. Can be. The substrate 20 is not necessarily limited thereto, and may be formed of a transparent plastic material.

The linear polarization layer 22 is formed on the upper surface of the substrate 20. FIG. 5 illustrates the structure of the linear polarizing layer 22 in greater detail in A of FIG. 4. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the substrate 20. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction of the quarter wavelength retardation layer 21 and the substrate 20 in the direction of the center of the grid 12, and the second component 12b has the center of the grid 12. As it approaches the direction, the content increases. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wavelength retardation layer 21 direction and the substrate 20 direction in the center direction of the grid 12.

Therefore, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 in the direction of the substrate 20, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident to the substrate 20 passes through the substrate 20, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and then is directed toward the quarter wavelength retardation layer 21. The contrast may be reduced by going out of the substrate 20. At this time, since the grid 12 is a structure that changes into a dielectric material toward the 1/4 wavelength retardation layer 21, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

A quarter wavelength retardation layer 21 is formed on the linear polarization layer 22. The quarter-wave retardation layer 21 may be formed by obliquely depositing an inorganic material. In this case, fine columns may extend in the oblique direction on the surface of the quarter-wave retardation layer 21. These columns become the direction of crystal growth. When the inorganic material is deposited, the inorganic material grows in a cylindrical shape. Therefore, in the case of oblique deposition, the cylindrical shape is inclined at a predetermined angle with respect to the horizontal direction. As a result, the birefringence characteristic is imparted to the quarter-wave retardation layer 21. The inorganic material capable of forming the quarter-wave retardation layer 21 may be variously applied to TiO 2, TaOx, etc., and may be formed of CaO or BaO to impart moisture absorption to the quarter-wave retardation layer 21. Can be.

The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. In the stacking order of the linear polarization layer 22 and the quarter-wave retardation layer 21, the linear polarization layer 22 is disposed close to the incidence direction of external light and the quarter-wave retardation layer 21 is disposed therein. . Another light transmissive member may be interposed between the linear polarizing layer 22 and the quarter-wave retardation layer 21.

The organic light emitting device 30 includes a first electrode 31, a second electrode 33, and an organic light emitting layer 32 that face each other. The first electrode 31 may be formed of a conductive material of a transparent material, and may be formed of ITO, IZO, In 2 O 3, ZnO, or the like, and may be formed in a predetermined pattern by a photolithography method. In the case of the passive matrix type PM, the pattern of the first electrode 31 may be formed as lines on the stripe spaced apart from each other, and in the case of the active matrix type AM, the pixel may be formed. It may be formed in the form corresponding to the. The second electrode 33 is disposed above the first electrode 31. The second electrode 33 may be a reflective electrode. The second electrode 33 may be formed of aluminum, silver, and / or calcium, and an external terminal (not shown). It can act as a cathode by connecting to. In the case of the passive driving type, the second electrode 33 may have a stripe shape orthogonal to the pattern of the first electrode 31, and in the case of the active driving type, the second electrode 33 may be formed over the entire active area in which the image is implemented. The polarity of the first electrode 31 and the polarity of the second electrode 33 may be opposite to each other.

The organic light emitting layer 32 interposed between the first electrode 31 and the second electrode 33 emits light by electric driving of the first electrode 31 and the second electrode 33. The organic light emitting layer 32 may use a low molecular weight or a high molecular organic material. When the organic light emitting layer 32 is formed of a low molecular organic material, a hole transport layer, a hole injection layer, etc. are stacked in the direction of the first electrode 31 around the organic light emitting layer 32, and the electron transport layer is directed in the direction of the second electrode 33. And an electron injection layer and the like. In addition, various layers may be stacked as needed. Organic materials that can be used are copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (triq-8-hydroxyquinoline aluminum) (Alq3) and the like can be variously applied.

Meanwhile, in the case of the polymer organic layer formed of the polymer organic material, only the hole transport layer (HTL) may be included in the direction of the first electrode 31 with respect to the organic emission layer 32. The polymer hole transport layer may include polyethylene dihydroxythiophene (PEDOT: poly- (2,4) -ethylene-dihydroxy thiophene), polyaniline (PANI), or the like by ink jet printing or spin coating. It is formed on the electrode 31, the polymer organic light emitting layer 32 may be PPV, Soluble PPV's, Cyano-PPV, polyfluorene (Polyfluorene) and the like, such as inkjet printing, spin coating or thermal transfer method using a laser The color pattern can be formed by a conventional method.

In one embodiment of the present invention, the light emitted from the organic light emitting element 30 is emitted in the direction of the substrate 20 as shown in FIG. 6 and the user of the organic light emitting display device is shown below the substrate 20 of FIG. 6. The image can be observed from the outside of the lower side. In such a bottom emission type structure, external light such as sunlight may be introduced through the substrate 20 to reduce contrast. However, according to the present invention, the linear polarization layer 22 and the quarter-wave retardation layer 21 form a circular polarization layer to minimize reflection of external light. The external light incident from the lower side of the substrate 20 is absorbed by components in the direction along the absorption axis of the linear polarizing layer 22 and transmits components in the direction along the transmission axis. The component in the direction along this transmission axis is converted into circularly polarized light which is rotated in one direction while passing through the phase difference layer 21 on the quarter wavelength. Circularly polarized light is reflected by the second electrode 33 of the organic light emitting element 30. When reflected, the circularly polarized light rotating in one direction becomes circularly polarized light rotating in the other direction, and is converted into linearly polarized light in the direction orthogonal to the initial transmission axis while passing through the quarter-wave retardation layer 21. The linearly polarized light is absorbed by the absorption axis of the linear polarization layer 22 so that the linearly polarized light does not come out of the lower side of the substrate 20. Therefore, it is possible to obtain an effect of minimizing external light reflection and further improving contrast.

Furthermore, the linear polarizing layer 22 of the present invention includes a plurality of grids 12. When the external light incident through the substrate 20 reaches the linear polarization layer 22, the grid 12 having a concentration gradient suppresses the reflection of the interface resulting from the difference in refractive index. In addition, a part of the external light incident through the substrate 20 is incident to the inside of the organic light emitting diode display, is reflected at the interfaces and the metal film constituting the organic light emitting diode display, and then goes out through the substrate 20 to become a problem. Can be. At this time, the external light grid 12 that passes through the substrate 20 is absorbed and the reflection of external light is minimized, resulting in an increase in contrast enhancement effect.

In addition, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are directly formed on the substrate 20, an organic light emitting display device having a reduced thickness without the need for an adhesive layer and the like may be implemented. Since it does not pass through this adhesive layer, brightness rises.

The linear polarization layer 22 and the quarter wave retardation layer 21 may be formed in various ways. Such a structure can be modified in consideration of the incident direction of external light not only in the case of the bottom emission type but also in the case of the top emission type.

6 is a cross-sectional view illustrating another example of a bottom emission organic light emitting display device according to an exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of the both surfaces of the substrate 20 facing outward, and the quarter wave retardation layer 21 is formed on the other surface. The organic light emitting element 30 is formed on the quarter-wave retardation layer 21. The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 7, which is an enlarged view of B of FIG. 6. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on a surface of both sides of the substrate 20 not facing the organic light emitting element 30. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction toward the substrate 20 and away from the substrate 20 in the center direction of the grid 12, and the second component 12b approaches the center direction of the grid 12. The higher the content, the higher the content. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the direction of the substrate 20 and away from the substrate 20 in the center direction of the grid 12.

Therefore, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 in the direction of the substrate 20, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident to the substrate 20 passes through the substrate 20, enters the inside of the organic light emitting display device, reflects off the metal film of the organic light emitting display device, and exits toward the substrate 20 to reduce contrast. can do. At this time, since the grid 12 is changed into a dielectric material toward the substrate 20, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

8 is a cross-sectional view illustrating still another example of a bottom emission type organic light emitting diode display according to an exemplary embodiment. A quarter wave retardation layer 21 and a linear polarization layer 22 are sequentially formed on one surface of both surfaces of the substrate and the organic light emitting element 30 is formed on the other surface of the substrate 20. It is. Detailed description of each component is as described above.

The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 9, which is an enlarged view of C of FIG. 8. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on a surface of both sides of the quarter-wave retardation layer 21 that does not face the substrate 20. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in a direction away from the direction of the quarter-wave retardation layer 21 and the direction of the quarter-wave retardation layer 21 in the center direction of the grid 12 and the second component 13b. ) Increases in the closer to the center of the grid (12). That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wave retardation layer 21 direction and the direction away from the quarter wave retardation layer 20 in the center direction of the grid 12. .

Therefore, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 in the direction of the substrate 20, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident toward the substrate 20 passes through the substrate 20, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and is then 1/4 wavelength phase difference in the direction of the substrate 20. Exiting in the direction of layer 21 can reduce the contrast. At this time, since the grid 12 has a structure that changes into a dielectric material toward the 1/4 wavelength retardation layer 21, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

The above description is an example of a bottom emission type organic light emitting device in which an image is embodied in the direction of the substrate 20, but the present invention is not necessarily limited thereto, and the present invention is not limited to the direction of the substrate 20. In addition, the same may be applied to the top emission structure implemented toward the opposite direction of the substrate 20.

FIG. 10 is a cross-sectional view illustrating an example of a top-emitting organic light emitting diode display according to another exemplary embodiment. The organic light emitting diode display includes a substrate 20, a reflective film 34 on the substrate 20, and an organic light emitting diode. 30, the sealing member 50 is included.

As described above, the transparent glass substrate 20 may be used as the substrate 20, but it is not necessary to be transparent. In addition, plastic or metal may be used to have flexible properties. At this time, an insulating film is further formed on the metal surface.

The reflective film 34 formed on one surface of the substrate 20 may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, a compound thereof, or the like. The first electrode 31 may be formed on the reflective film 34 of ITO, IZO, ZnO, In2O3, or the like having a high work function. The first electrode 31 functions as an anode, and if the first electrode 31 functions as a cathode, the first electrode 31 is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir. , Cr, and a compound thereof can also be used as the reflective film 34. Hereinafter, an example in which the first electrode 31 functions as an anode will be described.

The second electrode 33 is formed of a transmissive electrode. It can be formed thin so as to be a semi-permeable film made of metal such as Li, Ca, LiF / Al, Al, Mg, Ag, etc., which have a small work function. Of course, by forming a transparent conductor such as ITO, IZO, ZnO or In 2 O 3 on the metal semi-transmissive layer, it is possible to solve the problem of high resistance as the thickness becomes thin. The organic light emitting layer 32 formed between the first electrode 31 and the second electrode 33 is the same as described above.

The sealing member 50 which seals the organic light emitting element 30 is formed on the organic light emitting element 30. The sealing member 50 is formed to protect the organic light emitting device 30 from external moisture, oxygen, or the like, and the sealing member 50 is made of a transparent material. For this purpose, a glass substrate, a plastic substrate, or a plurality of overlapping structures of an organic material and an inorganic material may be used.

The quarter wavelength retardation layer 21 and the linear polarization layer 22 are sequentially formed on the upper surface of the sealing member 50, that is, the surface facing away from the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 11, which is an enlarged view of FIG. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the surface of the quarter-wave retardation layer 21 that does not face the sealing member 50. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction toward the quarter-wave retardation layer 21 and the direction away from the quarter-wave retardation layer 20 in the center direction of the grid 12 and the second component 12b. The content increases as it approaches the center of the grid 12. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wave retardation layer 21 direction and the direction away from the quarter wave retardation layer 21 in the center direction of the grid 12. .

Therefore, the surface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 toward the sealing member 50, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident to the substrate 20 passes through the sealing member 50, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and is then 1/4 in the direction of the sealing member 50. The contrast can be reduced by exiting in the direction of the wavelength retardation layer 21. At this time, since the grid 12 is a structure that changes into a dielectric material toward the 1/4 wavelength retardation layer 21, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

 21) mf According to the present embodiment, external light incident from the direction in which an image is implemented, that is, external light incident from the top in FIG. 10 passes through the linear polarization layer 22 and the quarter-wave retardation layer 21 in order, and then reflects the film. (34) When reflected off the surface it is finally unable to pass through the linear polarizing layer 22. The principle is as described above.

12 is a cross-sectional view illustrating still another example of a top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 13, which is an enlarged view of E in FIG. 12. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the sealing member 50 and the quarter wave retardation layer 21. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction of the quarter-wave retardation layer 21 and the sealing member 50 in the direction of the center of the grid 12 and the second component 12b of the grid 12 increases. The content increases as it gets closer to the center direction. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wave retardation layer 21 direction and the sealing member 50 direction in the center direction of the grid 12.

Therefore, the surface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 toward the sealing member 50, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident toward the sealing member 50 passes through the sealing member 50, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and is again ¼ wavelength phase difference layer 21. Direction in the direction of the sealing member 50 in the) direction can be reduced. At this time, since the grid 12 is a structure that changes into a dielectric material toward the 1/4 wavelength retardation layer 21, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

14 is a cross-sectional view illustrating still another example of a top-emitting organic light emitting diode display according to another exemplary embodiment of the present invention. The linear polarization layer 22 is formed on one surface of both surfaces of the sealing member 50 facing outwards, and the quarter-wave retardation layer 21 is formed on the other surface facing the organic light emitting device 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 15, which is an enlarged view of F of FIG. 14. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the surface of the sealing member 50 not facing the organic light emitting element 30. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction of the sealing member 50 and the direction away from the sealing member 50 in the central direction of the grid 12 and the second component 12b in the central direction of the grid 12. As it approaches, the content increases. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the sealing member 50 in the center direction of the grid 12 and away from the sealing member 50.

Therefore, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 toward the sealing member 50, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident toward the sealing member 50 passes through the sealing member 50, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and is again ¼ wavelength phase difference layer 21. Direction in the direction of the sealing member 50 to reduce the contrast. At this time, since the grid 12 has a structure that changes into a dielectric material toward the sealing member 50, the grid 12 may absorb external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

16 is a cross-sectional view illustrating still another example of a top-emission organic light emitting diode display according to another exemplary embodiment of the present invention. The reflective film 34 is formed on the substrate 20, the organic light emitting device 30 is formed on the reflective film 34, and the quarter-wave retardation layer 21 is formed on the organic light emitting device 30. The linear polarization layer 22 is formed on the quarter wavelength retardation layer 21. The structure of the linear polarizing layer 22 is shown in detail in FIG. 17, which is an enlarged view of G in FIG. 16. A plurality of grids 12 are formed on the quarter-wave retardation layer 21.

The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed on the quarter wave retardation layer 21. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction toward the quarter-wave retardation layer 21 and the direction away from the quarter-wave retardation layer 21 in the center direction of the grid 12 and the second component 12b. The content increases as it approaches the center of the grid 12. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wave retardation layer 21 direction and the direction away from the quarter wave retardation layer 21 in the center direction of the grid 12. .

Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

In this case, a protective layer may be formed between the second electrode 33 layer and the quarter-wave retardation layer 21. Referring to FIG. 18, a protective layer 40 is formed between the second electrode 33 and the quarter-wave retardation layer 21 of the organic light emitting diode 30. Since the structure of FIG. 18 is the same as that of FIG. 16 except for the protective layer 40, only the protective layer 40 will be described. The protective layer 40 is formed to prevent the second electrode 33 layer from being damaged during the process when the quarter-wave retardation layer 21 is formed. The protective layer 40 is formed of an inorganic material or an organic material. As the inorganic material, metal oxide, metal nitride, metal carbide, metal oxynitride, and compounds thereof may be used. As the metal oxides, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, and compounds thereof may be used. Aluminum nitride, silicon nitride, and compounds thereof may be used as the metal nitride. Silicon carbide may be used as the metal carbide, and silicon oxynitride may be used as the metal oxynitride. In addition to the inorganic material, silicon may be used, and ceramic derivatives of silicon and metal may be used. In addition, diamond-like carbon (DLC) may be used. Organic materials may include organic polymers, inorganic polymers, organometallic polymers, and hybrid organic / inorganic polymers. Can be used. Detailed structures and effects will be omitted as described above.

19 illustrates another example of a top emission organic light emitting diode device according to another embodiment of the present invention. The example in which the quarter-wave retardation layer 21 and the linear polarization layer 22 are formed between the reflective film 34 and the organic light emitting element 30 is shown. The structure of the linear polarizing layer 22 is shown in detail in FIG. 20, which is an enlarged view of FIG. 19H. A plurality of grids 12 are formed on the quarter-wave retardation layer 21.

The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the first electrode 31. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction of the quarter-wave retardation layer 21 and the direction of the first electrode 31 in the direction of the center of the grid 12, and the second component 12b includes the grid 12. The content increases as it approaches the central direction of. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wavelength retardation layer 21 direction and the first electrode 31 direction in the center direction of the grid 12.

Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

Although not shown, the quarter wavelength retardation layer 21 is formed on the upper surface of the reflective film 34, and the organic light emitting element 30 is formed on the quarter wavelength retardation layer 21. The linear polarizing layer 22 may be formed in the above.

FIG. 21 is a schematic cross-sectional view illustrating an example of a passive emission type bottom emission type organic light emitting diode display according to another exemplary embodiment of the present invention. In the organic light emitting diode display of FIG. 21, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on the upper surface of the substrate 20. The light emitting element 30 is formed. The detailed structure of the linear polarizing layer 22 is shown in detail in FIG. 22, which is an enlarged view of I of FIG. 21. The linear polarization layer 22 includes a plurality of grids 12. The grid 12 is formed between the quarter wave retardation layer 21 and the substrate 20. The grid 12 includes a first component 12a and a second component 12b having a concentration gradient in the thickness direction. The first component 12a is formed of a dielectric material and the second component 12b is formed of a metal. The content of the first component 12a increases in the direction of the quarter wavelength retardation layer 21 and the substrate 20 in the direction of the center of the grid 12, and the second component 12b has the center of the grid 12. As it approaches the direction, the content increases. That is, the grid 12 gradually changes from an opaque metal to a dielectric material toward the quarter wavelength retardation layer 21 direction and the substrate 20 direction in the center direction of the grid 12.

Therefore, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12 in the direction of the substrate 20, the external light is absorbed to prevent the reflection of the external light.

In addition, a part of the external light incident to the substrate 20 passes through the substrate 20, enters the inside of the organic light emitting diode display, is reflected by a metal film, etc. of the organic light emitting diode display, and then is directed toward the quarter wavelength retardation layer 21. The contrast may be reduced by going out of the substrate 20. At this time, since the grid 12 is a structure that changes into a dielectric material toward the 1/4 wavelength retardation layer 21, the grid 12 absorbs external light to suppress reflection. As a result, contrast can be improved. Detailed structures, manufacturing methods, and effects of the grid 12 are the same as those in the embodiments described with reference to FIGS.

The first electrode 31 is formed in a predetermined stripe pattern on the quarter-wave retardation layer 21, and the internal insulating film 35 is formed on the first electrode 31 so as to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By this separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is disposed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic light emitting layer 32 and the second electrode 33 may be patterned without the separator 36.

In the case of the embodiment according to FIG. 21, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially stacked on the substrate 20, as in the above-described embodiments. When viewed, the linear polarization layer 22 and the quarter-wave retardation layer 21 can block the reflection of external light introduced from the lower direction of the substrate 20 and the overall display thickness can be reduced. In addition, the interface reflection caused by the difference in refractive index is suppressed, and when the external light is incident on the grid 12, the external light is absorbed to prevent the reflection of the external light.

Although not illustrated in a separate drawing, the same structure as that of FIGS. 6 and 8 may be applied to the bottom emission type passive driving display device.

FIG. 23 is a schematic cross-sectional view illustrating an example of a bottom emission type organic light emitting diode display according to another embodiment of the present invention.

Referring to FIG. 23, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30.

Specifically, the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially formed on the substrate 20. The structure of the linear polarizing layer 22 is shown in detail in FIG. 24, which is an enlarged view of FIG. The structure of FIG. 24 is the same as that of FIG. 5, and a detailed description thereof will be omitted.

The buffer layer 41 is formed on the 1/4 wavelength retardation layer 21, and the semiconductor layer 42 of a predetermined pattern is formed on the buffer layer 41. A gate insulating film 43 formed of SiO 2, SiN x, or the like is formed on the semiconductor layer 42, and a gate electrode 44 is formed in a predetermined region on the gate insulating film 43. The gate electrode 44 is connected to a gate line (not shown) for applying a TFT on / off signal. An interlayer insulating layer 45 is formed on the gate electrode 44, and the source electrode 46 and the drain electrode 47 are formed to contact the source and drain regions of the semiconductor layer 42 through contact holes, respectively. . The TFT thus formed is covered with the passivation film 48 and protected.

A first electrode 31 serving as an anode electrode is formed on the passivation layer 48, and a pixel define layer 49 is formed of an insulator to cover the passivation layer 48. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

Also in the active drive type structure, since the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially stacked on the substrate 20, as seen in FIG. The linear polarization layer 22 and the quarter-wave retardation layer 21 can block the reflection of the introduced external light. In addition, the first low reflection layer 13 and the second low reflection layer 14 suppress the interface reflection caused by the refractive index difference.

In such an active driving type bottom emission type organic light emitting display device, the linear polarization layer 22 and the quarter-wave retardation layer 21 are arranged in a direction in which the linear polarization layer 22 is directed toward external light. As long as the four-wavelength retardation layer 21 is disposed in the direction toward the organic light emitting element 30, it may be formed on any surface formed by the substrate 20, the thin film transistor TFT and the organic light emitting element 30. That is, although not shown in a separate drawing, as shown in FIGS. 6 and 8, after forming the 1/4 wavelength retardation layer 21 and the linear polarization layer 22 on one surface and / or the other surface of the substrate 20. On top of this, a thin film transistor (TFT), an organic light emitting device 30 may be formed, and a quarter wavelength retardation layer 21 and / or a linear polarizing layer 22 may be formed on each layer of the thin film transistor TFT. It can also arrange | position between interfaces formed.

Instead of forming the passivation film 48 of FIG. 23, the linear polarization layer 22 and the quarter-wave retardation layer 21 may be substituted. Referring to FIG. 25, a separate passivation film 48 is not formed of an organic material and / or an inorganic material on the TFT, and the linear polarization layer 22 and the quarter-wave retardation layer 21 are sequentially interlayer insulating film 45. It is formed on the surface and replaces the passivation film 48. Hereinafter, other detailed structures and effects are the same as described above, and thus will be omitted.

FIG. 26 is a schematic cross-sectional view illustrating an example of a passive emission type top-emitting organic light emitting diode display according to another exemplary embodiment of the present disclosure.

The reflective film 34 is formed on the upper surface of the substrate 20, and the 1/4 wavelength retardation layer 21 and the linear polarizing layer 22 are sequentially formed on the upper surface of the reflective film 34, and the linear polarizing layer 22 is formed. The organic light emitting element 30 is formed on the ().

The structure of the linear polarizing layer 22 is shown in detail in FIG. 27, which is an enlarged view of FIG. The structure shown in FIG. 27 is the same as that of FIG. 20, and detailed description thereof will be omitted.

The first electrode 31 is formed in a predetermined stripe pattern on the linear polarizing layer 22, and the internal insulating layer 35 is formed on the first electrode 31 to partition it. On the internal insulating film 35, a separator 36 formed to be orthogonal to the first electrode 31 is formed for patterning the organic light emitting layer 32 and the second electrode 33. By the separator 36, the organic light emitting layer 32 and the second electrode 33 are patterned to intersect the first electrode 31. A sealing member (not shown) is formed on the second electrode 33 to block the organic light emitting element 30 from the outside air. In some cases, the organic emission layer 32 and the second electrode 33 may be patterned without the separator 36.

Even in this embodiment, the external light flowing from the outside is not reflected, so that the contrast can be improved and the overall display thickness can be reduced. Detailed structures and effects are the same as described above and will be omitted.

Although not illustrated in a separate drawing, the structure shown in FIGS. 10 to 18 may be applied to the front emission type passive driving display device as it is.

FIG. 28 is a schematic cross-sectional view illustrating an example of an active driving type top emission type organic light emitting diode display according to another exemplary embodiment of the present disclosure.

Referring to FIG. 28, a thin film transistor TFT is formed on an upper surface of the substrate 20. At least one thin film transistor TFT is formed for each pixel, and is electrically connected to the organic light emitting element 30. Since the structure of the thin film transistor TFT is the same as in FIG. 23 described above, a detailed description thereof will be omitted.

The passivation film 48 is formed on the thin film transistor TFT so as to cover the thin film transistor TFT, and the reflective film 34 is formed on the passivation film 48. The first electrode 31 serving as the anode electrode is formed on the reflective film 34, and the pixel defining layer 49 is formed of an insulator to cover the first electrode 31. After the predetermined opening is formed in the pixel defining layer 49, the organic light emitting layer 32 is formed in the region defined by the opening. The second electrode 33 is formed to cover all the pixels.

In the embodiment of FIG. 28, the linear polarizing layer 22 and the quarter-wave retardation layer 21 are sequentially formed on one surface of the sealing member 50 facing the organic light emitting element 30. The structure of the linear polarizing layer 22 is shown in detail in FIG. 29, which is an enlarged view of L in FIG. 28. The structure shown in FIG. 29 is the same as that of FIG. 13, and detailed description thereof will be omitted.

 As shown in FIG. 28, the linear polarization layer 22 and the quarter-wave retardation layer 21 can block reflection of external light incident from the upper side of the sealing member 50 in the upper direction of the drawing. In addition, the grid 12 absorbs external light by suppressing interfacial reflection caused by the difference in refractive index. As a result, the reflection of external light can be prevented to improve the contrast. Although not illustrated in a separate drawing, the structure shown in FIGS. 10 to 20 may be applied to the top emission type active driving display device as it is.

The present invention as described above is not limited to the organic light emitting display device, and can be applied to any other flat panel display device using an inorganic light emitting device, an LCD, an electron emitting device, or the like as the light emitting device.

The polarizer and the organic light emitting diode display according to the present invention can improve contrast and visibility.

Although described with reference to the embodiment shown in the drawings it is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (16)

Bass and A plurality of grids formed to have a predetermined pattern on the base and having a first component comprising a dielectric material and a second component comprising a metal, The first component and the second component has a concentration gradient in the thickness direction of the grid, the first component is increased in content toward both ends of the grid relative to the thickness direction of the grid, the second component Is a polarizer whose content increases toward the center of the grid with respect to the thickness direction of the grid. According to claim 1, The first component is any one selected from the group consisting of SiO x (x ≧ 1), SiN x (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, SnO 2, indium tin oxide (ITO), indium zinc oxide (IZO), ZnO and In 2 O 3. Polarizer containing one. According to claim 1, The second component is a polarizer including any one selected from the group consisting of Fe, Co, V, Ti, Al, Ag, Si, Cr, Mo, Ge, Y, Zn, Zr, W, Ta, Cu and Pt. Board An organic light emitting device formed on the substrate to implement an image A sealing member formed on the organic light emitting element A quarter-wave retardation layer formed on one of the surfaces formed by the substrate, the organic light emitting element, and the sealing member; A linear polarization layer formed on the other side of the surfaces formed by the substrate, the organic light emitting element, the sealing member, and the quarter-wave retardation layer, and positioned closer to the direction in which the image is realized than the quarter-wave retardation layer. Including, The linear polarizing layer includes a plurality of grids having a first component comprising a dielectric material and a second component comprising a metal, wherein the first component and the second component have a concentration gradient in the thickness direction of the grid. The content of the first component increases toward both ends of the grid based on the thickness direction of the grid, and the content of the second component increases toward the center of the grid based on the thickness direction of the grid. Increasing organic light emitting display device. The method of claim 4, wherein The image is embodied in the direction of the substrate, And the linear polarization layer is formed on the substrate, the quarter wavelength retardation layer is formed on the linear polarization layer, and the organic light emitting element is formed on the quarter wavelength retardation layer. The method of claim 4, wherein The image is embodied in the direction of the substrate, The quarter-wave retardation layer is formed on the substrate, the organic light emitting element is formed on the quarter-wave retardation layer, and the linear polarization layer has the quarter-wave retardation layer formed on both sides of the substrate. An organic light emitting display device formed on an opposite side of a surface. The method of claim 4, wherein The image is embodied in the direction of the substrate, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of both surfaces of the substrate on which the organic light emitting element is formed. The method of claim 4, wherein The image is embodied in the direction of the sealing member, And the quarter-wave retardation layer is formed on the organic light emitting element, and the linear polarization layer is formed on the quarter-wave retardation layer. The method of claim 8, And a passivation layer between the organic light emitting element and the quarter-wave retardation layer. The method of claim 4, wherein The image is embodied in the direction of the sealing member, And the quarter-wave retardation layer and the linear polarization layer are sequentially formed on opposite surfaces of the sealing member on which the organic light emitting element is formed. The method of claim 4, wherein The image is embodied in the direction of the sealing member, The quarter-wave retardation layer is formed on the surface of the sealing member facing the organic light emitting element, and the linear polarization layer is formed on the opposite side of the surface on which the quarter-wave retardation layer is formed among the both sides of the sealing member. OLED display. The method of claim 4, wherein The image is embodied in the direction of the sealing member, And the linear polarization layer is formed on the surface of the sealing member facing the organic light emitting element, and the quarter-wave retardation layer is formed on the surface of the linear polarization layer facing the organic light emitting element. The method of claim 4, wherein The image is embodied in the direction of the sealing member, And a reflective film interposed between the substrate and the organic light emitting device, wherein the quarter-wave retardation layer is formed between the reflective film and the organic light emitting device, and the linear polarizing layer is formed on the organic light emitting device. OLED display. The method according to any one of claims 4 to 13, The first component includes any one selected from the group consisting of SiO x (x ≧ 1), SiNx (x ≧ 1), MgF 2, CaF 2, Al 2 O 3, and SnO 2. The method according to any one of claims 4 to 13, The second component is organic light emitting including any one selected from the group consisting of Fe, Co, V, Ti, Al, Ag, Si, Cr, Mo, Ge, Y, Zn, Zr, W, Ta, Cu and Pt Display device. The method according to any one of claims 4 to 13, The grid is patterned in a stripe form spaced apart at predetermined intervals.

Images