KR100801670B1 - 잉크젯 프린팅법에 의한 나노소재의 미세 전극 패턴 제조방법 - Google Patents
잉크젯 프린팅법에 의한 나노소재의 미세 전극 패턴 제조방법 Download PDFInfo
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- KR100801670B1 KR100801670B1 KR1020060099975A KR20060099975A KR100801670B1 KR 100801670 B1 KR100801670 B1 KR 100801670B1 KR 1020060099975 A KR1020060099975 A KR 1020060099975A KR 20060099975 A KR20060099975 A KR 20060099975A KR 100801670 B1 KR100801670 B1 KR 100801670B1
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- 239000002041 carbon nanotube Substances 0.000 claims abstract description 63
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 28
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02606—Nanotubes
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Cold Cathode And The Manufacture (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
Claims (12)
- 탄소나노튜브 박막을 기판 상에 균일한 네트워크를 형성시키기 위하여 탄소나노튜브가 포함된 탄소나노튜브 잉크를 기판 상에 투명도 10%내지 99%, 표면저항 1Ω/sq 내지 106 Ω/sq로 젯팅하는 단계로 이루어짐을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에 있어서, 상기 젯팅(jetting)할 때 기판의 온도는 30℃이상인 것을 특징으로 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에 있어서, 상기 기판의 표면은 잉크가 넓게 퍼지도록 친수성을 띄도록 표면 처리함을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에 있어서, 상기 탄소나노튜브는 단일벽탄소나노튜브, 이중벽탄소나노튜브, 다중벽탄소나노튜브, 탄소나노섬유튜브로 이루어진 탄소 군에서 선택된 1종 혹은 상기 탄소나노튜브 표면에 금, 은, 동 중 어느 하나의 나노 입자가 표면수식(SURFACE-MODIFIED) 탄소나노튜브인 것을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에 있어서, 상기 기판으로 금속기판, 불투명 무기기판, 투명 무기기판, 폴리머 기판 , 투명 전도성 무기기판, 투명 전도성 폴리머기판으로 이루어진 군에서 선택된 1종인 것을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에서, 상기 기판은 잉크의 크기가 표면 위에서 최소화되도록 하기 위해 패턴 형성 표면이 소수성 처리됨을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에서, 상기 기판에 탄소나노튜브가 프린팅된 후 탄소나노튜브 이외의 잔여물을 완전한 제거를 위하여 고온 열처리하는 과정을 더 수행함을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에서, 상기 탄소나노튜브를 젯팅하기 전에 기판의 표면에 요철과 구멍을 먼저 형성하여 요철과 구멍에 탄소나노튜브 잉크가 페인팅되게 함을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 8 항에서, 상기 요철의 외부 또는 구멍의 외부에 프린트된 탄소나노튜브 잉크는 세정과정을 통해 제거됨을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 8 항에 있어서, 상기 기판에 형성된 요철의 내부와 외부 또는 구멍의 내부와 외부는 서로 다른 친수성을 갖도록 표면 처리됨을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 1 항에 있어서, 상기 기판이 전도성을 가짐을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
- 제 11 항에 있어서, 상기 전도성 기판에 형성된 탄소나노튜브를 포함하여 전체 기판은 10%내지 98%의 투명도를 가짐을 특징으로 하는 잉크젯 프린팅법에 의한 나노 소재의 미세 전극 패턴 제조 방법.
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KR1020060099975A KR100801670B1 (ko) | 2006-10-13 | 2006-10-13 | 잉크젯 프린팅법에 의한 나노소재의 미세 전극 패턴 제조방법 |
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KR1020060099975A KR100801670B1 (ko) | 2006-10-13 | 2006-10-13 | 잉크젯 프린팅법에 의한 나노소재의 미세 전극 패턴 제조방법 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011040685A1 (en) * | 2009-09-29 | 2011-04-07 | Kyunghee University Industrial & Academic Collaboration Foundation | Method for fabricating flexible board using solution process |
WO2013165194A1 (ko) * | 2012-05-02 | 2013-11-07 | 서강대학교 산학협력단 | 잉크젯 프린팅을 이용한 모듈형 마이크로유체 종이 칩의 제작방법 |
KR101522225B1 (ko) * | 2013-06-19 | 2015-05-26 | 한국과학기술연구원 | 탄소나노튜브 미세배선 형성방법, 이에 의하여 형성된 미세배선기판 및 이 미세배선 제조용 탄소나노튜브 분산용액 |
WO2015096591A1 (zh) * | 2013-12-23 | 2015-07-02 | 北京阿格蕾雅科技发展有限公司 | 高分散碳纳米管复合导电墨水 |
CN110482530A (zh) * | 2019-09-04 | 2019-11-22 | 北京华碳元芯电子科技有限责任公司 | 一种制备图案化碳纳米管薄膜的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20060062437A (ko) * | 2004-12-03 | 2006-06-12 | 한국과학기술연구원 | 탄소나노튜브 후막 및 이를 이용한 전계방출형 표시소자,평판형 램프 및 화학센서 감지막 |
-
2006
- 2006-10-13 KR KR1020060099975A patent/KR100801670B1/ko active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20060062437A (ko) * | 2004-12-03 | 2006-06-12 | 한국과학기술연구원 | 탄소나노튜브 후막 및 이를 이용한 전계방출형 표시소자,평판형 램프 및 화학센서 감지막 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011040685A1 (en) * | 2009-09-29 | 2011-04-07 | Kyunghee University Industrial & Academic Collaboration Foundation | Method for fabricating flexible board using solution process |
WO2013165194A1 (ko) * | 2012-05-02 | 2013-11-07 | 서강대학교 산학협력단 | 잉크젯 프린팅을 이용한 모듈형 마이크로유체 종이 칩의 제작방법 |
KR101360404B1 (ko) | 2012-05-02 | 2014-02-11 | 서강대학교산학협력단 | 잉크젯 프린팅을 이용한 모듈형 마이크로유체 종이 칩의 제작방법 |
US10201811B2 (en) | 2012-05-02 | 2019-02-12 | Industry-University Cooperation Foundation Sogang University | Method for manufacturing modular microfluidic paper chips using inkjet printing |
KR101522225B1 (ko) * | 2013-06-19 | 2015-05-26 | 한국과학기술연구원 | 탄소나노튜브 미세배선 형성방법, 이에 의하여 형성된 미세배선기판 및 이 미세배선 제조용 탄소나노튜브 분산용액 |
WO2015096591A1 (zh) * | 2013-12-23 | 2015-07-02 | 北京阿格蕾雅科技发展有限公司 | 高分散碳纳米管复合导电墨水 |
CN110482530A (zh) * | 2019-09-04 | 2019-11-22 | 北京华碳元芯电子科技有限责任公司 | 一种制备图案化碳纳米管薄膜的方法 |
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