KR100796602B1 - Organic electroluminescent device and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a method of manufacturing the same, which can realize a full color by adjusting the thickness of a hole injection layer without a color filter, comprising: a substrate including first, second and third pixel regions; A first electrode on the substrate, the first electrode including a reflective film; A hole injection layer on the first electrode and having a different thickness for each pixel region, a first emission layer on the hole injection layer, and a first emission layer on the second and third pixel regions An organic film layer including a second light emitting layer and a third light emitting layer on the second light emitting layer; It provides an organic electroluminescent device comprising a second electrode positioned on the organic film layer.

In addition, the present invention provides a substrate including first, second and third pixel regions, forms a first electrode including a reflective film on the substrate, and is disposed on the first electrode for each pixel region. A hole injection layer having a different thickness, a first light emitting layer positioned on the hole injection layer, a second light emitting layer positioned on the first light emitting layer of the second and third pixel regions, and a second light emitting layer positioned on the second light emitting layer The present invention provides a method of manufacturing an organic light emitting display device, wherein an organic film layer including a light emitting layer is formed, and a second electrode is formed on the organic film layer.

Description

Organic light emitting display device and fabrication method thereof

1 is a cross-sectional view of a conventional organic light emitting display device.

2 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

3 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention.

4 is a graph showing a spectrum of an organic light emitting display device according to Example 1;

5 is a graph showing the spectrum of an organic light emitting display device according to Example 2;

6 is a graph showing the spectrum of an organic light emitting display device according to Example 3;

7 is a graph showing a spectrum of an organic light emitting display device according to Comparative Example 1;

<Brief Description of Drawings>

100,200,300: substrate 110,210,310: first electrode

120,220,320: pixel defining layer 130,230,330: organic layer

133,233,333: first light emitting layer 134,234,234: second light emitting layer

135,235,335: third light emitting layer 231b, 231c, 331c, 331d: first hole injection layer

232,332: second hole injection layer 140, 240, 340: second electrode

150: transparent coating layer 160: color filter layer

170: overcoating layer

The present invention relates to an organic light emitting display device and a method for manufacturing the same, and more particularly, to an organic light emitting display device and a method for manufacturing the same that can realize a full color by adjusting the thickness of the hole injection layer and the second electrode without a color filter. will be.

In general, an organic light emitting display device includes a substrate, an anode located on the substrate, an emission layer (EML) located on the anode, and a cathode located on the emission layer. In the organic light emitting device, a voltage is applied between the anode and the cathode, holes and electrons are injected into the light emitting layer, holes and electrons injected into the light emitting layer are recombined in the light emitting layer to generate excitons. These excitons emit light as they transition from the excited state to the ground state.

In order to promote full colorization of the organic light emitting device, there is a method of forming a light emitting layer corresponding to each of R, G, and B. However, in this case, the light emitting layers corresponding to each of the R, G, and B have different life characteristics, and thus have a disadvantage in that white balance is difficult to maintain for a long time.

In order to solve this problem, a light emitting layer emitting light of a single color, that is, white light is formed, and a color filter layer for extracting light corresponding to a predetermined color from the light emitting layer or light emitted from the light emitting layer is converted into light of a predetermined color. There is a method of forming a color conversion layer.

1 is a cross-sectional view of an organic light emitting display device emitting conventional white light.

Referring to FIG. 1, a substrate 100 including a blue pixel area as a first pixel area a, a green pixel area as a second pixel area b, and a red pixel area as a third pixel area c is provided. A first electrode 110, which is a reflective electrode, is formed on the substrate 100.

Here, a thin film transistor, a capacitor, and an insulating film may be further included between the substrate 100 and the first electrode 110.

The pixel defining layer 120 is formed on the first electrode 110 and then patterned to form an opening.

The organic layer 130 is formed by sequentially stacking the first light emitting layer 133, which is a blue light emitting layer, the second light emitting layer 134, which is a green light emitting layer, and the third light emitting layer 135, which is a red light emitting layer, on the first electrode 110. Form. The organic layer 130 implements white light.

Subsequently, a second electrode 140 which is a transflective electrode is formed on the organic layer 130, and a transparent protective film 150 is formed on the second electrode 140. The color filter layer 160 is formed on the transparent protective layer 150 to correspond to the first electrode 110. An overcoat layer 170 is formed on the color filter layer 160. This completes the organic light emitting device that implements white light.

The conventional organic light emitting device emits white light using an organic film layer in which a blue light emitting layer, a green light emitting layer, and a red light emitting layer are sequentially stacked. Since the conventional organic light emitting device requires a color filter layer, a problem arises in that the manufacturing process is complicated and the manufacturing cost increases. In addition, in order to emit white light, three peaks of R, G, and B must be balanced, but it is difficult to control them, and there is a problem in that the luminous efficiency is lowered even if they are adjusted.

Accordingly, the present invention is to solve the above problems, and provides an organic light emitting display device and a method for manufacturing the same, which can implement a full color by adjusting the thickness of the hole injection layer.

In order to achieve the above object, the present invention provides a substrate comprising a first, second and third pixel region; A first electrode on the substrate, the first electrode including a reflective film; A hole injection layer on the first electrode and having a different thickness for each pixel region, a first light emitting layer on the hole injection layer, and a first light emitting layer on the second and third pixel regions An organic film layer including a second light emitting layer and a third light emitting layer on the second light emitting layer; It provides an organic electroluminescent device comprising a second electrode positioned on the organic film layer.

In addition, the present invention provides a substrate including first, second and third pixel regions, forms a first electrode including a reflective film on the substrate, and is disposed on the first electrode for each pixel region. A hole injection layer having a different thickness, a first light emitting layer positioned on the hole injection layer, a second light emitting layer positioned on the first light emitting layer of the second and third pixel regions, and a second light emitting layer positioned on the second light emitting layer The present invention provides a method of manufacturing an organic light emitting display device, comprising forming an organic layer including a light emitting layer and forming a second electrode on the organic layer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to describe the present invention in more detail. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. In the figures, where a layer is said to be "on" another layer or substrate, it may be formed directly on the other layer or substrate, or a third layer may be interposed therebetween. Like numbers refer to like elements throughout the specification.

2 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 2, a substrate 200 including a first pixel region a, a second pixel region b, and a third pixel region c is formed of glass, stainless steel, plastic, or the like. . Here, the first pixel area (a) is one selected from a blue pixel area, a green pixel area, and a red pixel area, and the second pixel area (b) is selected from among a blue pixel area, a green pixel area, and a red pixel area. Any one not selected as the first pixel region a is used. Further, the third pixel area c is not selected as the first pixel area a and the second pixel area b from among the blue pixel area, the green pixel area, and the red pixel area.

A first electrode 210 including a reflective film is formed on the substrate 200. Here, a thin film transistor, a capacitor, and an insulating film may be further included between the substrate 200 and the first electrode 210.

The first electrode 210 may be formed in a double structure or a triple structure including a reflective film made of ITO or IZO having a high work function, and Al, Ag, or an alloy thereof.

Subsequently, an opening is formed by forming and patterning a pixel defining layer 220 on the first electrode 210. The pixel definition layer 220 may be formed of an organic layer such as benzocyclobutene, polyimide, polyamide, acrylic resin, or an inorganic layer such as spin on glass.

Subsequently, a hole injection layer having a different thickness for each pixel region is formed on the first electrode 210. The hole injection layer may be formed as a single layer having a different thickness for each pixel region. The hole injection layer may be disposed on the first hole injection layer and the first hole injection layer of the second and third pixel areas, and on the second hole injection layer or the second and third pixel areas having different thicknesses. It may be formed in a double structure including a first hole injection layer having a different thickness to and a second hole injection layer positioned over the entire surface of the substrate including the first hole injection layer. In addition, a first hole injection layer, a second hole injection layer positioned on the first hole injection layer of the second and third pixel regions, and a third hole injection layer positioned on the second hole injection layer of the third pixel region. It may also be formed into a triple structure comprising a layer. In the present embodiment, the latter case of the hole injection layer having the double structure will be described.

Subsequently, first hole injection layers 231b and 231c are formed on the first electrode 210 of the second and third pixel regions by laser thermal transfer. A second hole injection layer 232 is formed over the entire surface of the substrate including the first hole injection layers 231b and 231c. Here, the thickness of the second hole injection layer 232 in the first pixel region is preferably 200 to 300 kPa. This is because the hole injection efficiency is not improved when it is less than 200 mV, and when the thickness exceeds 300 mV, the thickness of the organic light emitting diode is increased.

In addition, the total thicknesses of the first hole injection layers 231b and 231c and the second hole injection layer 232 of the second and third pixel areas are different for each pixel area. In the case of the green pixel region, 300 to 400 Hz and the blue pixel region are preferably 50 to 100 Hz.

The total thicknesses of the first hole injection layers 231b and 231c and the second hole injection layer 232 in the second and third pixel areas are different from each other in the first hole injection layers 231b and 231c and the first hole injection layer 231b and 231c. 2 Since the hole injection layer 232 acts as a resonator and realizes a microcavity effect, when the thickness is out of each thickness range defined for each pixel, that is, when the thickness is thinner than the limited range, the wavelength becomes shorter. And when it becomes thicker than the limited range, the wavelength will become long and a problem arises that a mixed color rather than one color appears.

Here, the microcavity effect generally refers to the occurrence of multi-reflection interference between the reflective anode and the semi-transmissive cathode, which is used to convert the light emitting layer having a wide color emitting layer into R, G, and B using an optical mechanism. . In this embodiment, when the color is emitted from the organic light emitting layer to be formed in a later process, the light is directly emitted to the outside, and is reflected by the second electrode and then reflected by the reflective film of the first electrode to be emitted outside It can be divided into branches. In the latter case, the microcavity effect may be realized by controlling the thickness of the hole injection layer, that is, the optical thickness, and controlling the reflectance and transmittance by adjusting the thickness of the second electrode.

Subsequently, a first light emitting layer 233 is formed on the second hole injection layer 232, and the second light emitting layer 234 is finely patterned on the first light emitting layer 233 in the second and third pixel regions. It is formed by performing a deposition method using a mask. The third emission layer 235 is formed on the second emission layer 234 by performing a deposition method using a fine pattern mask. This completes the organic layer 230. Since the second light emitting layer 234 and the third light emitting layer 235 are not formed on the first light emitting layer 233 in the first pixel area a, the first light emitting layer 233 may have a first shape. Emissive color is directly implemented. On the other hand, in the region in which the first light emitting layer 233, the second light emitting layer 234, and the third light emitting layer 235 are sequentially stacked, the thicknesses of the first hole injection layers 231b and 231c may be adjusted. The second emission color and the third emission color can be realized. Therefore, the second emission color and the third emission color have the effect of realizing each color without a color filter in the white emission layer. In the present exemplary embodiment, the thickness of the hole injection layer 231b of the second pixel region b is smaller than the thickness of the hole injection layer 231c of the third pixel region c. It doesn't work.

Here, the first light emitting layer 233 is any one selected from a red light emitting layer, a green light emitting layer, and a blue light emitting layer. In addition, the second light emitting layer 234 is not selected as the first light emitting layer 233 among the red light emitting layer, the green light emitting layer, and the blue light emitting layer, and the third light emitting layer 235 is the red light emitting layer, the green light emitting layer, and the blue light emitting layer. The first light emitting layer 233 and the second light emitting layer 234 are not selected.

The reason why the first light emitting layer 233 is formed only in one pixel area is to secure a light that is difficult to implement using light microcavity effect, in particular, light emitting efficiency is not good, and the light emitting layer of color having low efficiency This is because direct patterning can improve the efficiency of light. In addition, since the first light emitting layer 233 is directly patterned, only two peaks need to be adjusted to implement white light of the remaining pixel region, and thus, it is easier to implement white light by adjusting three conventional peaks. .

In addition, in the stacking order of the organic light emitting layer, the first light emitting layer 233 is most preferably used as the blue light emitting layer, the second light emitting layer 234 as the green light emitting layer, and the third light emitting layer 235 as the red light emitting layer. This is because the stacking order of the organic light emitting layer affects the recombination region due to the mobility of the host material itself and the bandgap energy of the bandgap energy dopant material itself.

In addition, the thickness of the first light emitting layer 233, the second light emitting layer 234 and the third light emitting layer 235 is preferably 30 ~ 300Å. The reason for this is that it is difficult to maintain a balance when the balance is less than 30 Hz or exceeds 300 Hz, which causes a problem in implementing white light. In addition, the thickness of the blue light emitting layer is 30 ~ 200Å, the thickness of the green light emitting layer is 50 ~ 300Å and the thickness of the red light emitting layer is most preferably 100 ~ 300Å.

In addition, the organic layer 230 may further include a single layer or multiple layers selected from a hole transport layer, a hole suppression layer, an electron transport layer and an electron injection layer.

Subsequently, a second electrode 240 is formed on the organic layer 230. The second electrode 240 is preferably aluminum silver (AlAg) or magnesium silver (MgAg). Here, the aluminum is doped with aluminum and silver, respectively, and aluminum and silver are sequentially formed, and the thickness of aluminum is preferably 5 to 200 kPa and the thickness of silver is 50 to 500 kPa. In addition, the magnesium is formed of two materials doped together with silver, the thickness of the magnesium is preferably 80 ~ 400Å. The reason for this is that when the second electrode 240 becomes thick outside the limited thickness range, the resistance decreases while the transmittance becomes poor and the reflectance increases. In addition, when the second electrode 240 becomes thinner than the defined thickness, the transmittance increases, but the resistance increases, which causes a problem that cannot be used as an electrode.

In addition, the reason for limiting the thickness of the second electrode 240 as described above is the same as the reason for limiting the thickness of the hole injection layer, by adjusting the thickness of the second electrode to adjust the reflectance and transmittance to generate multi-interference to fine microcavity. To implement the effect. Here, the reflectance of the second electrode 240 has a great influence on the line width control of the transmission spectrum.

As a result, the organic electroluminescent device implementing blue, red, green, and white colors is completed using the microcavity effect.

3 is a cross-sectional view showing an organic light emitting display device according to another embodiment of the present invention.

Referring to FIG. 3, a substrate 300 including a first pixel area a, a second pixel area b, a third pixel area c, and a fourth pixel area d is provided. Here, the first pixel area (a) is any one selected from a blue pixel area, a red pixel area, and a green pixel area. The second pixel area b is any one of the blue pixel area, the red pixel area, and the green pixel area not selected as the first pixel area a. The third pixel area c is any one of the blue pixel area, the red pixel area, and the green pixel area not selected as the first pixel area a and the second pixel area b. The fourth pixel area is a white pixel area.

A first electrode 310 including a reflective film is formed on the substrate 300. A thin film transistor, a capacitor, an insulating film, and the like may be further included between the substrate 300 and the first electrode 310.

The first electrode 310 may be formed in a double structure or a triple structure including a reflective film made of ITO or IZO having a high work function, and Al, Ag, or an alloy thereof.

Subsequently, an opening is formed by forming and patterning a pixel defining layer 320 on the first electrode 310. The pixel definition layer 320 may be formed of an organic layer such as benzocyclobutene, polyimide, polyamide, acrylic resin, or an inorganic layer such as spin on glass.

Subsequently, a hole injection layer having a different thickness for each pixel is formed on the first electrode 310. The hole injection layer may be formed as a single layer having a different thickness for each pixel region. The hole injection layer may be disposed on the first hole injection layer and the first hole injection layer of the second and third pixel areas, and on the second hole injection layer or the second and third pixel areas having different thicknesses. It may be formed in a double structure including a first hole injection layer having a different thickness to and a second hole injection layer positioned over the entire surface of the substrate including the first hole injection layer. In addition, a first hole injection layer, a second hole injection layer positioned on the first hole injection layer of the second and third pixel regions, and a third hole injection layer positioned on the second hole injection layer of the third pixel region. It may also be formed into a triple structure comprising a layer. In the present embodiment, the latter case of the hole injection layer having a double structure will be described.

First hole injection layers 331b and 331c are formed on the first electrode 310 of the second and third pixel regions by laser thermal transfer. A second hole injection layer 332 is formed over the entire surface of the substrate including the first hole injection layers 331b and 331c. In this case, the thickness of the second hole injection layer 332 in the first and fourth pixel areas is preferably 200 to 300 mW.

In addition, the total thicknesses of the first hole injection layers 331b and 331c and the second hole injection layer 332 are different for each pixel, 600 to 700 Å for the red pixel area, 300 to 400 Å for the green pixel area, In the case of a blue pixel region, it is preferable that it is 50-100 Hz. The reason why the total thicknesses of the first hole injection layers 331b and 331c and the second hole injection layer 332 are different is the same as described in the description of FIG.

Subsequently, a first emission layer 333 is formed on the second hole injection layer 332. A second light emitting layer 334 is formed on the first light emitting layer 333 in the second and third pixel areas, and a third light emitting layer 335 is formed on the second light emitting layer 334. This completes the organic layer 330. It is preferable that the thicknesses of the first light emitting layer 333, the second light emitting layer 334, and the third light emitting layer 335 are respectively 30 to 300 μm. Description of the light emitting layers is the same as described in the description of FIG.

The second electrode 340 is formed on the organic layer 330. Here, the description of the second electrode 340 is the same as that described in the description of FIG.

As a result, the organic light emitting diode including the first pixel region, the second pixel region, the third pixel region, and the fourth pixel region is completed.

Hereinafter, the present invention will be illustrated by the following examples, but the scope of the present invention is not limited by the following examples.

Example 1

Aluminum was formed on the substrate of the blue pixel region to a thickness of 1000 Å, and ITO was formed on the aluminum to 125 Å thickness. Idemit's IDE406 was formed to a thickness of 70 Å as the hole injection layer on the ITO. Idemit's IDE320 was formed to a thickness of 150 Å as a hole transport layer on the hole injection layer. On the hole transport layer, a blue light emitting layer containing BW215 of Idemitsu Co., Ltd. as a host material and 3 wt% of BD512 of Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 60 Hz. On the blue light emitting layer, a green light emitting layer containing 6 wt% of Idemitsu Co., Ltd. BH215 as a host material and Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 100 μs. Subsequently, a red light emitting layer material containing 150 wt% of BH215 of Idemitsu Corp. as a host material and 9 wt% of P1 of Idemitsu Corp. as a dopant material was formed on the green light emitting layer. Subsequently, Alq3, which is an electron transport layer, was formed on the green light emitting layer to a thickness of 150 GPa, and LiF, which was an electron injection layer, was formed on the electron transport layer. Subsequently, aluminum was formed on the electron injection layer by using a cathode at a thickness of 10 kPa, and silver was formed on the aluminum at a thickness of 250 kPa.

Example 2

Aluminum was formed to a thickness of 1000 Å on the substrate of the green pixel region, and ITO was formed to a thickness of 125 Å on the aluminum. Idemit's IDE406 was formed to have a thickness of 300 mm 3 as a hole injection layer on the ITO. Idemit's IDE320 was formed to a thickness of 150 Å as a hole transport layer on the hole injection layer. On the hole transport layer, a blue light emitting layer containing BW215 of Idemitsu Co., Ltd. as a host material and 3 wt% of BD512 of Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 60 Hz. On the blue light emitting layer, a green light emitting layer containing 6 wt% of Idemitsu Co., Ltd. BH215 as a host material and Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 100 μs. Subsequently, on the green light emitting layer, a red light emitting layer material containing 150 wt% of BH215 of Idemitsu Co., Ltd. as a host material and 9 wt% of P1 of Idemitsu Co., Ltd. as a dopant material was formed. Subsequently, Alq3, which is an electron transport layer, was formed on the green light emitting layer to a thickness of 150 GPa, and LiF, which was an electron injection layer, was formed on the electron transport layer. Subsequently, aluminum was formed on the electron injection layer by using a cathode at a thickness of 10 kPa, and silver was formed on the aluminum at a thickness of 250 kPa.

Example 3

Aluminum was formed on the substrate of the red pixel region to a thickness of 1000 Å, and ITO was formed on the aluminum to a thickness of 125 Å. Idemit's IDE406 was formed to a thickness of 620 kPa as the hole injection layer on the ITO. Idemit's IDE320 was formed to a thickness of 150 Å as a hole transport layer on the hole injection layer. On the hole transport layer, a blue light emitting layer containing BW215 of Idemitsu Co., Ltd. as a host material and 3 wt% of BD512 of Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 60 Hz. On the blue light emitting layer, a green light emitting layer containing 6 wt% of Idemitsu Co., Ltd. BH215 as a host material and Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 100 μs. Subsequently, a red light emitting layer material containing 150 wt% of BH215 of Idemitsu Corp. as a host material and 9 wt% of P1 of Idemitsu Corp. as a dopant material was formed on the green light emitting layer. Subsequently, Alq3, which is an electron transport layer, was formed on the green light emitting layer to a thickness of 150 GPa, and LiF, which was an electron injection layer, was formed on the electron transport layer. Subsequently, aluminum was formed on the electron injection layer by using a cathode at a thickness of 10 kPa, and silver was formed on the aluminum at a thickness of 250 kPa.

Comparative Example 1

Aluminum was formed on the substrate of the blue pixel region to a thickness of 1000 Å, and ITO was formed on the aluminum to 125 Å thickness. Idemit's IDE406 was formed to a thickness of 120 으로 as the hole injection layer on the ITO. Idemit's IDE320 was formed to a thickness of 150 Å as a hole transport layer on the hole injection layer. On the hole transport layer, a blue light emitting layer containing BW215 of Idemitsu Co., Ltd. as a host material and 3 wt% of BD512 of Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 60 Hz. On the blue light emitting layer, a green light emitting layer containing 6 wt% of Idemitsu Co., Ltd. BH215 as a host material and Idemitsu Co., Ltd. as a dopant material was formed to a thickness of 100 μs. Subsequently, a red light emitting layer material containing 150 wt% of BH215 of Idemitsu Corp. as a host material and 9 wt% of P1 of Idemitsu Corp. as a dopant material was formed on the green light emitting layer. Subsequently, Alq3, which is an electron transport layer, was formed on the green light emitting layer to a thickness of 150 GPa, and LiF, which was an electron injection layer, was formed on the electron transport layer. Subsequently, aluminum was formed on the electron injection layer by using a cathode at a thickness of 10 kPa, and silver was formed on the aluminum at a thickness of 250 kPa.

4 is a graph showing the emission spectrum and the intensity of <Example 1>. The x-axis represents wavelength (unit: nm), and the y-axis represents intensity (a.u.:arbitrary unit).

Referring to FIG. 4, the intensity is approximately 3.1, the maximum peak is shown between the wavelength range of 460 to 480 nm, and the maximum peak is located in the blue wavelength range.

FIG. 5 is a graph showing the emission spectrum and the intensity of Example 2. FIG. The x-axis represents wavelength (unit: nm), and the y-axis represents intensity (a.u.:arbitrary unit).

Referring to FIG. 5, the intensity is approximately 1.5, the maximum peak is indicated between the wavelength range of 520 to 560 nm, and the maximum peak is located within the wavelength range of green.

6 is a graph showing the emission spectrum and intensity of <Example 3>. The x-axis represents wavelength (unit: nm), and the y-axis represents intensity (a.u.:arbitrary unit).

Referring to FIG. 6, the intensity is about 1.3, the maximum peak is indicated between 640 nm and 680 nm, and the maximum peak is located within the red wavelength range.

7 is a graph showing the emission spectrum and intensity of <Comparative Example 1>. The x-axis represents wavelength (unit: nm), and the y-axis represents intensity (a.u.:arbitrary unit).

Referring to FIG. 7, the intensity is 2, the wavelength range is between 480 nm and 500 nm, and the maximum peak is located in the region where the mixed color of green and blue is realized.

As such, the organic light emitting display device according to the exemplary embodiment of the present invention can realize full color in white light by adjusting the thickness of the hole injection layer without a color filter. Since there is no color filter, there is an effect of simplifying the process and manufacturing cost.

Although the present invention has been illustrated and described with reference to certain preferred embodiments, the present invention is not limited thereto and may be applied to passive organic light emitting diodes. In addition, it will be readily apparent to those skilled in the art that the present invention may be variously modified and changed without departing from the spirit or field of the present invention provided by the following claims. will be.

As described above, the present invention implements a microcavity effect by adjusting the thickness of the hole injection layer without a color filter, and thus, the full color of the organic light emitting display device can be realized. In addition, since there is no color filter, the process is simplified and manufacturing cost is reduced.

Claims (14)

A substrate including first, second and third pixel regions; A first electrode on the substrate, the first electrode including a reflective film; A hole injection layer positioned on the first electrode and having a different thickness for each pixel region, a first emission layer positioned on the hole injection layer, and a first emission layer positioned on the first and second pixel regions; An organic film layer including a second light emitting layer and a third light emitting layer on the second light emitting layer; An organic light emitting display device, characterized in that it comprises a second electrode located on the organic film layer. The method of claim 1, And the substrate further comprises a fourth pixel region. The method of claim 1, The hole injection layer of the first pixel region is characterized in that the thickness of 200 ~ 300 계. The method of claim 1, The thickness of the hole injection layer of the second and third pixel areas is 600 to 700 Å for the red pixel area, 300 to 400 Å for the green pixel area, and 50 to 100 Å for the blue pixel area. . The method of claim 1, The hole injection layer includes a first hole injection layer disposed on the second and third pixel areas and having a different thickness, and a second hole injection layer positioned over the entire surface of the substrate including the first hole injection layer. A double structure or a double structure comprising a first hole injection layer positioned over the entire surface of the substrate and a second hole injection layer located on the first hole injection layer of the second and third pixel regions and having different thicknesses. An organic light emitting display device, characterized in that. The method of claim 1, The hole injection layer may include a first hole injection layer positioned over the entire surface of the substrate, a second hole injection layer positioned on the first hole injection layer of the second and third pixel regions, and the third pixel region of the third pixel region. 2. An organic light emitting display device having a triple structure including a third hole injection layer positioned on a hole injection layer. The method of claim 1, The first light emitting layer is any one selected from among red, green, and blue light emitting layers, and the second light emitting layer is any one selected from the first light emitting layer among red, green, and blue light emitting layers, and the third light emitting layer is red, green. And a blue light emitting layer which is not selected as the first light emitting layer and the second light emitting layer. The method of claim 1, Wherein the first light emitting layer is a blue light emitting layer, the second light emitting layer is a green light emitting layer, and the third light emitting layer is a red light emitting layer. The method of claim 1, The thickness of the first light emitting layer, the second light emitting layer and the third light emitting layer is an organic light emitting device, characterized in that each 30 ~ 300Å. The method of claim 2, The fourth pixel region may include a substrate; A first electrode on the substrate; A hole injection layer on the first electrode, a first light emitting layer on the hole injection layer, a second light emitting layer on the first light emitting layer, and a third light emitting layer on the second light emitting layer Organic film layer; An organic light emitting device comprising a second electrode on the organic film layer. The method of claim 2, And the fourth pixel area is a white pixel area. Providing a substrate including first, second and third pixel regions, Forming a first electrode including a reflective film on the substrate, A hole injection layer disposed on the first electrode and having a different thickness for each pixel region, a first emission layer positioned on the hole injection layer, and a first emission layer positioned on the first emission layer of the second and third pixel regions Forming an organic film layer including a second light emitting layer and a third light emitting layer on the second light emitting layer, A method of manufacturing an organic light emitting display device, characterized in that to form a second electrode on the organic film layer. The method of claim 12, The substrate further comprises a fourth pixel region. The method of claim 13, The fourth pixel region may include a substrate; A first electrode on the substrate; A hole injection layer on the first electrode, a first light emitting layer on the hole injection layer, a second light emitting layer on the first light emitting layer, and a third light emitting layer on the second light emitting layer Organic film layer; And a second electrode disposed on the organic layer.

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