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KR100788341B1 - Chip Stacked Semiconductor Packages - Google Patents

Chip Stacked Semiconductor Packages Download PDF

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Publication number
KR100788341B1
KR100788341B1 KR1020010024384A KR20010024384A KR100788341B1 KR 100788341 B1 KR100788341 B1 KR 100788341B1 KR 1020010024384 A KR1020010024384 A KR 1020010024384A KR 20010024384 A KR20010024384 A KR 20010024384A KR 100788341 B1 KR100788341 B1 KR 100788341B1
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chip
circuit film
chips
semiconductor
stacked
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KR20020085102A (en
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정태복
김선희
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앰코 테크놀로지 코리아 주식회사
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1052Wire or wire-like electrical connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

본 발명은 다수개의 칩을 적층하되 플렉시블한 회로필름을 사용하여 최소의 면적과 체적을 점유하며 편리하게 칩을 적층하여 작업성이 뛰어난 칩 적층형 반도체 패키지를 제공한다. The present invention provides a chip stacked semiconductor package having excellent workability by stacking a plurality of chips but occupying a minimum area and volume using a flexible circuit film and conveniently stacking chips.

본 발명은 다수개의 반도체 칩과; 상기 칩의 접속패드에 전기접속되며 회로가 패턴되어 있는 회로 필름과; 상기 칩과 회로필름간의 접속부를 봉지하는 봉지재를 포함하며 상기 회로필름은 다수개의 칩과 연속접속되어 있고 상기 회로필름을 구부려 칩을 적층시킨 칩 적층형 반도체 패키지를 제공한다.The present invention provides a plurality of semiconductor chips; A circuit film electrically connected to a connection pad of the chip and having a circuit patterned thereon; An encapsulant for encapsulating a connection portion between the chip and the circuit film, wherein the circuit film is continuously connected to a plurality of chips and provides a chip stacked semiconductor package in which the circuit film is bent to stack the chips.

회로필름, 플렉시블, 칩 적층Circuit Film, Flexible, Chip Lamination

Description

칩 적층형 반도체 패키지{Chip Stacked Semiconductor Package}Chip Stacked Semiconductor Package

도 1 은 종래 칩 적층형 반도체 패키지의 개략적인 단면도.1 is a schematic cross-sectional view of a conventional chip stacked semiconductor package.

도 2 는 본 발명에 의한 칩 적층형 반도체 패키지의 일실시예를 도시한 도면으로써, 칩들을 적층하기 전 회로필름을 펼친 상태를 도시한 측면도.Figure 2 is a view showing an embodiment of a chip stacked semiconductor package according to the present invention, a side view showing a state in which the circuit film unfolded before stacking the chips.

도 3 은 상기 도 2의 칩 어셈블리부를 확대도시한 단면도.3 is an enlarged cross-sectional view of the chip assembly of FIG. 2.

도 4 는 상기 도 2의 칩 적층형 반도체 패키지의 하단부에 위치하여 외부인출단자가 구비된 칩 어셈블리부를 도시한 단면도.FIG. 4 is a cross-sectional view of a chip assembly including an external lead terminal located at a lower end of the chip stacked semiconductor package of FIG. 2.

도 5 는 본 발명에 의한 칩 적층형 반도체 패키지의 완성된 형태를 도시한 단면도.5 is a cross-sectional view showing a completed form of a chip stacked semiconductor package according to the present invention.

도 6과 도 7은 본 발명에 의한 칩 적층형 반도체 패키지의 제 2 실시예를 도시한 개략적인 측면도와 단면도.6 and 7 are schematic side and sectional views showing a second embodiment of a chip stacked semiconductor package according to the present invention;

도 8과 도 9는 본 발명에 의한 칩 적층형 반도체 패키지의 제 3 실시예를 도시한 개략적인 측면도와 단면도.8 and 9 are schematic side and sectional views showing a third embodiment of a chip stacked semiconductor package according to the present invention;

도 10a 는 본 발명에 의한 칩 적층형 반도체 패키지에서 개별 칩 어셈블리부의 다른 실시예를 도시한 단면도.Figure 10a is a cross-sectional view showing another embodiment of the individual chip assembly in the chip stacked semiconductor package according to the present invention.

도 10b는 상기 도 10a의 실시예를 봉지하기 전 상태를 일부 도시한 상면도.FIG. 10B is a top view of a portion of a state before encapsulating the embodiment of FIG. 10A. FIG.

도 11 은 본 발명에 의한 칩 적층형 반도체 패키지의 또 다른 실시예를 도시 한 상면도.11 is a top view showing still another embodiment of the chip stacked semiconductor package according to the present invention.

** 도면의 주요부분에 대한 부호의 설명 **** Explanation of symbols for main parts of drawings **

5: 접착수단 6,6a~6f: 반도체 칩5: bonding means 6,6a to 6f: semiconductor chip

62: 센터패드 64: 사이드 패드 62: center pad 64: side pad

7: 봉지재 9: 와이어7: encapsulant 9: wire

10,100: 회로필름 12: 리드10,100: circuit film 12: lead

14: 홀14: hall

본 발명은 반도체 패키지에 관한 것으로서, 보다 상세하게는 다수의 반도체 칩을 수직으로 적층하는 칩 적층형 반도체 패키지에 관한 것이다. The present invention relates to a semiconductor package, and more particularly, to a chip stacked semiconductor package in which a plurality of semiconductor chips are stacked vertically.

일반적으로, 반도체 산업에서 집적회로에 대한 패키징 기술은 소형화에 대한 요구 및 실장 신뢰성을 만족시키면서도 메모리 용량을 증가시키기 위해 지금까지 계속 발전해오고 있다.In general, packaging technology for integrated circuits in the semiconductor industry continues to evolve to increase memory capacity while satisfying the demand for miniaturization and mounting reliability.

즉, 소형화에 대한 요구는 칩 스케일에 근접한 패키지에 대한 개발을 가속화시키고 있고, 실장 신뢰성에 대한 요구는 실장작업의 효율성 및 실장후의 기계적·전기적 신뢰성을 향상시킬 수 있는 패키지 제조 기술에 대한 중요성을 부각시키고 있으며, 메모리 용량을 증가시키기 위한 적층형 패키지 제조 기술에 대한 기술 개발 및 중요성 또한 부각되고 있는 실정이다. In other words, the demand for miniaturization is accelerating the development of packages close to the chip scale, and the demand for mounting reliability emphasizes the importance of package manufacturing technology that can improve the efficiency of mounting work and the mechanical and electrical reliability after mounting. In addition, the development and importance of stacked package manufacturing technology for increasing memory capacity is also emerging.                         

도 1 은 종래 칩 적층형 반도체 패키지의 개략적인 형태를 도시한 단면도이다. 1 is a cross-sectional view illustrating a schematic form of a conventional chip stacked semiconductor package.

도면을 참조하면, 종래 칩 적층형 반도체 패키지는 크게 아웃리드(2a)와 인너리드(2b)로 이루어지는 리드(2)와, 반도체 칩이 적치되는 칩 패드(4)와, 제 1 반도체 칩(6)과, 상기 제 1 반도체 칩(6)위에 적치되는 제 2 반도체 칩(8)과, 상기 언급한 구성요소들을 일거에 보호하며 감싸는 봉지재(7)로 구성된다. Referring to the drawings, a conventional chip stack semiconductor package includes a lead 2 consisting of an outlead 2a and an inner lead 2b, a chip pad 4 on which a semiconductor chip is stacked, and a first semiconductor chip 6. And a second semiconductor chip 8 stacked on the first semiconductor chip 6, and an encapsulant 7 which encapsulates and protects the above-mentioned components at a glance.

보다 상세히 살펴보면, 중앙의 칩 패드(4)상에는 제 1 반도체 칩(6)이 적치되고 상기 제 1 반도체 칩(6) 표면의 접속패드(6a)와 인너리드(2a)간에 전도성 와이어(9)로 본딩되어 있다. In more detail, the first semiconductor chip 6 is deposited on the central chip pad 4, and the conductive wire 9 is connected between the connection pad 6a and the inner lead 2a on the surface of the first semiconductor chip 6. Bonded

상기 제 1 반도체 칩(6) 위에는 제 2 반도체 칩(8)이 적치되어 있는바, 상기 제 2 반도체 칩(8)은 제 1 반도체 칩(6)보다 크기가 다소 적다. 상기 제 2 반도체 칩(8)의 크기가 제 1 반도체 칩(6)의 크기보다 적은 것은 제 1 반도체 칩(6)에서 와이어(9)가 본딩되는 접속패드(6a) 영역을 확보하기 위한 것이다. The second semiconductor chip 8 is stacked on the first semiconductor chip 6, and the second semiconductor chip 8 is somewhat smaller in size than the first semiconductor chip 6. The size of the second semiconductor chip 8 is smaller than that of the first semiconductor chip 6 in order to secure an area of the connection pad 6a in which the wire 9 is bonded in the first semiconductor chip 6.

이와 같이 제 2 반도체 칩(8)이 적치된 상태에서 다시 제 2 반도체 칩(8)의 접속패드(8a)와 인너리드(2b)간을 와이어(9)로 본딩하게 된다. As described above, in the state where the second semiconductor chip 8 is stacked, the wire 9 is bonded between the connection pad 8a and the inner lead 2b of the second semiconductor chip 8 again.

상술한 구성의 칩 적층형 패키지는 와이어 루프를 확보하기 위해 반도체 패키지의 두께가 증가하게 되고, 또한 제 1 반도체 칩(6)과 제 2 반도체 칩(8)이 모두 와이어 본딩을 해야 하므로 같은 사이즈의 칩을 적층하기가 용이하지 않은 문제점이 있다. In the chip stack package having the above-described configuration, the thickness of the semiconductor package is increased in order to secure the wire loop, and since the first semiconductor chip 6 and the second semiconductor chip 8 must be wire bonded, the chips of the same size There is a problem that is not easy to stack the.

또한, 상기 종래의 방법으로는 2개를 초과하는 개수의 반도체 칩을 적층하는 것이 쉽지 않은 문제점 또한 발생한다. In addition, in the conventional method, it is also difficult to stack more than two semiconductor chips.

본 발명은 상술한 종래 기술의 문제점을 해결하기 위하여 안출된 발명으로써, 다수개의 칩을 적층하되 플렉시블한 회로필름을 사용하여 최소의 면적과 체적을 점유하며 편리하게 칩을 적층하여 작업성이 뛰어난 칩 적층형 반도체 패키지를 제공하는 것을 목적으로 한다. The present invention has been made in order to solve the above problems of the prior art, a stack of a plurality of chips, but using a flexible circuit film occupies the minimum area and volume, and conveniently stacks the chip excellent chip workability It is an object to provide a stacked semiconductor package.

상기 목적을 달성하기 위하여 본 발명은 집적회로를 구비한 다수개의 반도체 칩과; 상기 칩의 접속패드에 전기접속하여 상기 각각의 칩을 연결하는 회로가 패턴되어 있는 유연한 재질의 회로 필름과; 상기 칩과 상기 회로필름이 연결되는 접속부를 봉지하는 봉지재;를 포함하며, 상기 회로필름은 상기 다수개의 칩들의 사이에 연속접속되어 있고 상기 회로필름을 구부려 각각의 칩이 서로 면접하게 적층시킨 것을 특징으로 하는 칩 적층형 반도체 패키지를 제공한다. .The present invention provides a plurality of semiconductor chips having an integrated circuit to achieve the above object; A circuit film of a flexible material in which a circuit for connecting each chip is electrically connected to a connection pad of the chip; An encapsulant for encapsulating a connection portion to which the chip and the circuit film are connected; wherein the circuit film is continuously connected between the plurality of chips, and the chips are bent to be interviewed with each other by bending the circuit film. A chip stacked semiconductor package is provided. .

삭제delete

본 발명의 구성에 대하여 첨부한 도면을 참조하면서 보다 상세하게 설명한다. 참고로 본 발명의 구성을 설명하기에 앞서 설명의 중복을 피하기 위하여 종래 기술과 일치하는 부분에 대해서는 종래 도면 부호를 그대로 인용하기로 한다. The structure of this invention is demonstrated in detail, referring an accompanying drawing. For reference, prior to describing the configuration of the present invention, in order to avoid duplication of description of the prior art reference will be referred to the same reference numerals.

도 2 는 본 발명에 의한 칩 적층형 반도체 패키지의 바람직한 일실시예를 도시한 단면도로서 반도체 칩을 적층하기 전 상태를 도시한 도면이고 도 3은 상기 도 2에서 개별 칩 어셈블리부를 확대도시한 단면도이다. FIG. 2 is a cross-sectional view showing a preferred embodiment of a chip stacked semiconductor package according to the present invention, showing a state before stacking semiconductor chips, and FIG. 3 is an enlarged cross-sectional view of an individual chip assembly in FIG.

도 2를 참조하면, 본 발명에 의한 칩 적층형 반도체 패키지는 적층되기 전에는 중앙에 연속된 회로필름(10)의 곳곳에 이격형성된 반도체 칩(6)이 부착된 구성 이다. 참고로 설명의 편의를 위하여 동일한 칩들이지만 각각 (6a),(6b),(6c),(6d),(6e),(6f)로 구분지어 설명한다. Referring to FIG. 2, the chip stacked semiconductor package according to the present invention has a structure in which semiconductor chips 6 spaced apart from each other in a continuous circuit film 10 are attached to the center before being stacked. For reference, for convenience of description, the same chips are described, respectively, divided into (6a), (6b), (6c), (6d), (6e), and (6f).

상기 반도체 칩들(6a...6f)은 각각 회로필름(10)의 일면에 부착되며, 상기 칩 부착면은 회로필름(10)의 일면과 타면 중 선택하되 동일면에 부착되어 있다. 상기 각각의 반도체 칩 어셈블리에는 반도체 칩 뿐만 아니라 칩 패드와 회로필름을 와이어본딩한 후 상기 본딩부위를 봉지한 봉지재(7)와, 칩(6)과 칩(6)을 적층시 접착시키는 접착수단이 구비되어 있는바 자세한 내용은 도 3을 참조하여 후술하기로 한다. The semiconductor chips 6a... 6f are respectively attached to one surface of the circuit film 10, and the chip attaching surface is selected from one surface and the other surface of the circuit film 10, but is attached to the same surface. Bonding means for bonding the encapsulant 7 encapsulating the bonding portion and the chip 6 and the chip 6 when wire bonding not only a semiconductor chip but also a chip pad and a circuit film to each semiconductor chip assembly; It is provided with the bar details will be described later with reference to FIG.

상기 회로필름(10)은 필름상에 회로가 패턴된 것으로서, 플렉시블(flexible)하여 구부러질 수 있는 특성을 지니고 있다. 상기 봉지재(7)는 일반적으로 EMC(Epoxy Mold Compound)를 주로 사용하는데 본 발명에서는 액상 또는 페이스트상태로써 주사기 등으로 도포하여 경화시키는 봉지수지(Encapsulation Material)를 사용함이 바람직하다. The circuit film 10 is a circuit pattern on the film, and has a characteristic that can be bent (flexible). The encapsulant 7 generally uses EMC (Epoxy Mold Compound). In the present invention, it is preferable to use an encapsulation material that is cured by applying a syringe or the like in a liquid or paste state.

상기 접착수단(5)은 일반적인 어드헤시브의 일종으로써 봉지재(7)와 봉지재(7) 또는 칩과 칩을 접착시킨다. The adhering means 5 is a kind of general advice to bond the encapsulant 7 and the encapsulant 7 or the chip and the chip.

도시된 도면을 기준으로 가장 우측에 도시된 칩 패키지부가 적층시 가장 하단부에 위치하여 마더보드에 실장되므로 접속단자 역할을 하는 솔더볼(32)이 부착되어 있다. Since the chip package shown on the right side is mounted on the motherboard at the bottom of the stack, the solder ball 32 serving as a connection terminal is attached to the drawing.

이하 도 3의 단면도를 참조하여 본 발명의 칩 적층형 반도체 패키지의 소단위를 이루는 칩 패키지부를 보다 상세하게 설명한다. Hereinafter, with reference to the cross-sectional view of Figure 3 will be described in more detail the chip package portion constituting the sub-unit of the chip stacked semiconductor package of the present invention.                     

도 3 은 도 2에서 가장 상측에 적치되는 칩 패키지부(F)를 도시한 도면으로써, 도면에서 보는 바와 같이 반도체 칩(6f)의 표면에는 회로필름(10)이 부착되는데, 상기 회로필름(10)은 FPC(Flexible PCB)와 같이 유연하게 구부러질 수 있는 특성을 지님이 바람직하다. 상기 회로필름(10)은 반도체 칩(6f)의 표면에 부착될 때 반도체 칩(6f)의 접속패드(62)를 노출시킨 상태로 부착된다. FIG. 3 is a view illustrating a chip package part F stacked on an uppermost side in FIG. 2, and as shown in the drawing, a circuit film 10 is attached to a surface of a semiconductor chip 6f. ) Is preferably flexible, such as FPC (Flexible PCB). When the circuit film 10 is attached to the surface of the semiconductor chip 6f, the circuit film 10 is attached with the connection pad 62 of the semiconductor chip 6f exposed.

상기 반도체 칩(6f)은 도면에 도시된 바와 같이 중앙에 접속패드가 형성된, 즉 센터패드를 구비한 칩이다. 상기 반도체 칩(6f)의 접속패드(62)와 회로필름(10)의 리드간(12)은 와이어(9) 본딩으로 접속되어 있다. 상기 와이어(9)는 통상 전도성이 뛰어난 골드, 알루미늄 또는 구리 와이어를 사용하며 반도체 칩의 접속패드(62)와 회로필름의 리드(12)를 접속력을 향상시킨다.The semiconductor chip 6f is a chip in which a connection pad is formed in the center, that is, provided with a center pad as shown in the drawing. The connecting pads 62 of the semiconductor chip 6f and the leads 12 of the circuit film 10 are connected by wire 9 bonding. The wire 9 generally uses gold, aluminum, or copper wire having excellent conductivity, and improves connection force between the connection pad 62 of the semiconductor chip and the lead 12 of the circuit film.

본 실시예에서는 센터패드를 구비한 반도체 칩을 사용하였으나 사이드 패드를 구비한 반도체 칩이 적용될 수 있으며, 상기 사이드 패드를 구비한 반도체 칩이 적용된 패키지는 후술하기로 한다. In the present embodiment, a semiconductor chip having a center pad is used, but a semiconductor chip having a side pad may be applied, and a package to which the semiconductor chip having the side pad is applied will be described later.

상기 반도체 칩(6f)의 접속패드(62)와 와이어(9)는 노출되면 산화등으로 손상되기 쉽고 외부충격에 약하므로 와이어 접속부를 봉지재(7)로 봉지한다. 상기 봉지재(7)는 통상 열경화성 봉지재를 사용하며, 에폭시 몰드 컴파운드나 페이스트 형태의 봉지재(7)를 채용함이 바람직하다.When the connection pad 62 and the wire 9 of the semiconductor chip 6f are exposed, the connection pad 62 and the wire 9 are easily damaged by oxidation and the like, and thus are susceptible to external impact. The encapsulant 7 generally uses a thermosetting encapsulant, and preferably uses an encapsulant 7 in the form of an epoxy mold compound or a paste.

상기 반도체 칩의 배면이나 봉지재의 상면에는 접착수단(5)이 도포되어진다. 상기 접착수단은 필름타입으로 부착시켜 큐어(cure)할 수도 있고 액상 또는 페이스트상으로 주사기에서 주사할 수도 있다. An adhesive means 5 is applied to the back surface of the semiconductor chip or the top surface of the encapsulant. The adhesive means may be cured by attaching a film type or may be injected from a syringe in liquid or paste form.                     

도 4 는 도 2의 우측 끝단에 도시되어 본 발명의 칩 적층형 반도체 패키지의 하단부를 구성하는 칩 패키지부(A)를 확대도시한 단면도이다. 참고로 도시된 예는 마더보드에 실장되는 방향과 반대로 도시되어 있다.FIG. 4 is an enlarged cross-sectional view of the chip package portion A illustrated at the right end of FIG. 2 and constituting the lower end portion of the chip stacked semiconductor package of the present invention. The example shown for reference is shown opposite to the direction in which the motherboard is mounted.

도면에서 보는 바와 같이, 반도체 칩(6a)의 접속패드(62)가 형성된 표면에는 회로필름(10)이 부착되어 있으며, 접속패드부(62)는 노출되어 회로필름(10)에 와이어(9) 본딩되어 있다. 도시된 칩 패키지부(A)는 언급한 바와 같이, 칩 적층형 반도체 패키지의 하단부에 위치하기 때문에 마더보드에 실장될 때 인출단자를 필요로 한다. As shown in the figure, a circuit film 10 is attached to the surface on which the connection pad 62 of the semiconductor chip 6a is formed, and the connection pad part 62 is exposed to expose the wire 9 to the circuit film 10. Bonded As illustrated, the chip package portion A is located at the lower end of the chip stacked semiconductor package, and thus requires a lead terminal when mounted on the motherboard.

이를 위하여 상기 회로필름에서 반도체 칩이 부착되는 면과 반대되는 면에는 반도체 칩의 전기신호를 외부로 전달하는 외부인출단자(30)가 구비된다. 상기 외부인출단자(30)는 전도성을 지닌 금속재가 이용되며 본 실시예에서는 솔더 볼(32:solder ball)을 채용하였다. To this end, an external drawing terminal 30 for transmitting an electrical signal of the semiconductor chip to the outside is provided on a surface opposite to the surface to which the semiconductor chip is attached in the circuit film. As the external drawing terminal 30, a conductive metal material is used, and in this embodiment, a solder ball 32 is used.

상기 솔더 볼(32)은 회로필름(10)에 형성된 각각의 리드선(12)의 단부에 연결되며 마더보드에 실장시 마더보드의 접속패드(도시생략)에 융착접속된다. The solder ball 32 is connected to the end of each lead wire 12 formed in the circuit film 10 and is fusion-spliced to the connection pad (not shown) of the motherboard when mounted on the motherboard.

도 3에서는 칩의 접속패드(62)와 와이어(9)를 보호하기 위해 회로필름(10)의 대부분을 봉지하였으나, 본 실시예에서는 솔더 볼(32)이 부착될 영역을 확보하기 위하여 와이어(9)를 포함하여 최소부위만 봉지하였다. In FIG. 3, most of the circuit film 10 is encapsulated to protect the connection pad 62 and the wire 9 of the chip. However, in this embodiment, the wire 9 is secured to secure an area to which the solder ball 32 is attached. ) Only the smallest part was sealed.

도 5 는 도 2와 같이 회로필름(10)이 펼쳐진 상태에서 본 발명이 의도하는바대로 각각의 반도체 칩끼리 적층한 구조를 도시한 단면도이다. FIG. 5 is a cross-sectional view illustrating a structure in which each semiconductor chip is stacked as the present invention intends while the circuit film 10 is unfolded as shown in FIG. 2.

반도체 칩을 적층하는 과정을 도 2를 참조하여 개략적으로 설명하면, 먼저 제1칩(6a)의 배면과 제2칩(6b)의 배면이 맞닿도록 회로필름(10)을 구부리고 제2칩(6b)의 배면에 도포된 접착제(5)로 제1칩(6a)과 제2칩(6b)을 접착시킨다. A process of stacking semiconductor chips will be described with reference to FIG. 2. First, the circuit film 10 is bent so that the rear surface of the first chip 6a and the rear surface of the second chip 6b come into contact with each other. The first chip 6a and the second chip 6b are adhered to each other with the adhesive 5 applied on the back surface of the sheet.

이후 제3칩(6c)과 제2칩(6b)에 연결된 회로필름(10)을 구부려 제3칩(6c)의 봉지재(7) 상면에 도포된 접착제(5)로 제2칩(6b)의 봉지재(7) 상면과 맞닿게 한 후 접착시킨다. 이와 같은 방법으로 제4칩(6d)의 배면과 제3칩(6c)의 배면을 접착시키고, 제5칩(6e)의 봉지재(7)와 제4칩(6d)의 봉지재(7)를 접착시키며 제6칩(6f)의 배면과 제5칩(6e)의 배면을 접착시킨다. Thereafter, the second chip 6b is bent with the adhesive 5 applied to the top surface of the encapsulant 7 of the third chip 6c by bending the circuit film 10 connected to the third chip 6c and the second chip 6b. Contact with the top surface of the encapsulant (7). In this manner, the back surface of the fourth chip 6d and the back surface of the third chip 6c are adhered to each other, and the encapsulant 7 of the fifth chip 6e and the encapsulant 7 of the fourth chip 6d are attached. And the back surface of the sixth chip 6f and the back surface of the fifth chip 6e.

상술한 방법으로 접착제(5)를 이용하여 차례로 칩을 적층시키면 도 5에 도시된 구조를 이루게 된다. 각 반도체 칩들은 연속된 회로필름에 모두 접속되어 최소한의 수직높이로 최대한의 칩이 적층될 수 있게 된다.By stacking the chips one by one using the adhesive 5 in the above-described manner, the structure shown in FIG. 5 is achieved. Each semiconductor chip is connected to a continuous circuit film so that the maximum number of chips can be stacked with a minimum vertical height.

도 6 은 본 발명에 의한 칩 적층형 반도체 패키지의 제 2 실시예를 도시한 개략적인 측면도이고 도 7 은 상기 도 6 과 같이 나열되어 있는 각 칩들을 적층한 상태를 도시한 단면도이다. FIG. 6 is a schematic side view illustrating a second embodiment of a chip stacked semiconductor package according to the present invention, and FIG. 7 is a cross-sectional view illustrating a stacked state of each of the chips arranged as shown in FIG. 6.

도 6에서 보는 바와 같이, 상기 반도체 패키지는 각각 2개의 반도체 칩(6)이 서로 대향되도록 적층된 후 상기 적층된 2개의 칩이 하나의 유닛을 이루어 다시 상기 유닛단위로 적층되도록 한 것이다. As shown in FIG. 6, the semiconductor package is formed by stacking two semiconductor chips 6 so as to face each other, and then stacking the two stacked chips as a unit and again in the unit unit.

도 7의 적층된 상태에서 알수 있듯이 서로 대향된 2개의 칩이 유닛이 되어 각 유닛끼리 다시 적층되도록 함으로써 보다 용이하게 칩이 적층되며 도 5에서와 같이 최소의 두께로 칩 적층형 반도체 패키지를 구현할 수 있게 된다. As can be seen in the stacked state of FIG. 7, two chips facing each other become a unit so that each unit is stacked again, so that chips are more easily stacked, and as shown in FIG. 5, a chip stacked semiconductor package can be implemented with a minimum thickness. do.

도 8과 도 9 는 본 발명의 제 3 실시예를 도시한 것으로써, 도 8에서 보는바 와 같이 각각의 반도체 칩(6)들은 서로 대향되도록 칩이 접착되지 않고 단지 화살표 방향으로 회로필름(10)만을 구부려 동일한 형태로 인접한 칩의 위로 적층되도록 한 것이다. 8 and 9 illustrate a third embodiment of the present invention, as shown in FIG. 8, each of the semiconductor chips 6 is not bonded to each other so that the chips are opposed to each other, and the circuit film 10 only in the direction of the arrow. ) Only bent to stack on top of adjacent chips in the same shape.

그 결과 도 9에 도시된 것처럼 반도체 칩들은 봉지부(7)가 한 방향으로 위치하도록 연속 적층구성할 수 있다.As a result, as illustrated in FIG. 9, the semiconductor chips may be continuously stacked such that the encapsulation portion 7 is positioned in one direction.

도 10a와 도 10b는 본 발명에 의한 칩 적층형 반도체 패키지의 다른 실시예를 도시한 단면도이다. 10A and 10B are cross-sectional views illustrating another embodiment of the chip stacked semiconductor package according to the present invention.

도 2 내지 도 9에 도시된 실시예는 센터패드가 구비된 칩을 사용하였으나 이하의 실시예에서는 사이드 패드를 구비한 칩을 사용하여 칩을 적층시킨 구조를 보여준다.2 to 9 illustrate a structure in which chips are stacked by using a chip having a center pad.

도 10a는 연속된 회로필름에 부착된 칩 패키지부 중 일부를 도시한 도면으로써, 반도체 칩(6)의 접속패드(64)가 칩의 가장자리에 형성되어 있다. 이와 같은 사이드 패드(64)를 구비한 반도체 칩(6)은 칩의 외곽쪽으로 와이어(9)가 본딩된 형태를 이루게 되며 와이어 본딩부를 포함하여 칩의 윗면을 봉지하게 된다. FIG. 10A shows a portion of the chip package portion attached to the continuous circuit film, in which a connection pad 64 of the semiconductor chip 6 is formed at the edge of the chip. The semiconductor chip 6 having the side pads 64 as described above forms a shape in which the wires 9 are bonded to the outer side of the chip and encapsulates the upper surface of the chip including the wire bonding portion.

도 10b는 도 10a에 도시된 칩 패키지에 있어서, 봉지재(7)로 봉지하기 전의 상태를 도시한 상면도이다. FIG. 10B is a top view illustrating a state before sealing with the encapsulant 7 in the chip package shown in FIG. 10A.

도면에서 보는 바와 같이, 상기 회로필름(10)의 곳곳에는 슬롯형태로 홀(14)이 형성되어 있으며, 상기 홀(14)은 반도체 칩(6)의 접속패드(64)를 노출시킨다. 상기 노출된 접속패드(64)와 회로필름(10)의 본딩패드간에 전도성 와이어(9)로 본딩접속되어 있으며 회로필름(10)은 중앙과 사이드쪽으로 버스역할을 하는 리드(12) 가 연결될 수 있도록 되어 있어 각 칩간의 전기신호가 중앙과 사이드 리드(12)로 전달될 수 있도록 한다. As shown in the figure, holes 14 are formed in slots around the circuit film 10, and the holes 14 expose the connection pads 64 of the semiconductor chip 6. The exposed connection pads 64 and the bonding pads of the circuit film 10 are bonded to each other by a conductive wire 9, and the circuit film 10 may be connected to a lead 12 serving as a bus to the center and the side. The electrical signal between each chip can be transmitted to the center and the side lead (12).

상기와 같이 회로필름(10)을 넓게 구성하여 홀(14)을 형성하고 상기 홀부위에서 칩(6)의 접속패드(64)가 와이어 본딩되도록 하며, 회로필름(10)의 중앙과 사이드쪽으로 버스 라인(12)을 구비토록 함으로써, 사이드 패드(64)를 지닌 칩을 채용함이 가능해진다. As described above, the circuit film 10 is widely configured to form the holes 14, and the connection pads 64 of the chip 6 are wire-bonded at the holes, and the buses are moved toward the center and side of the circuit film 10. By providing the line 12, it becomes possible to employ a chip with the side pads 64.

도 11 은 본 발명에 의한 칩 적층형 반도체 패키지의 다른 실시예를 도시한 도면으로써, 회로필름과 칩사이의 와이어 본딩부를 봉지재로 봉지하기 전의 상면도를 도시한 상면도이다. FIG. 11 is a view showing another embodiment of a chip stacked semiconductor package according to the present invention, and is a top view showing a top view before encapsulating the wire bonding portion between the circuit film and the chip with an encapsulant.

도 11의 도면에 도시된 회로필름(100)은 도 6b에 도시된 회로필름(10)보다 2배의 폭을 지니면서 반도체 칩(6)이 2열로 배열되어 있음을 알수 있다. 이와 같은 구조로 배열하게 되면 수평으로 2개의 칩이 배열되고 그 위로 다수의 칩들이 수직적층 되도록 할 수 있다.In the circuit film 100 shown in FIG. 11, it can be seen that the semiconductor chips 6 are arranged in two rows while having a width twice that of the circuit film 10 shown in FIG. 6B. This arrangement allows two chips to be arranged horizontally and multiple chips stacked vertically.

뿐만 아니라 3열, 4열 이상의 칩 적층형 반도체 패키지를 용이하게 구성할 수 있게 된다. In addition, it is possible to easily configure a chip stacked semiconductor package of three rows, four rows or more.

물론, 상기 실시예들에 사용되는 반도체 칩들은 동일한 사이즈와 동일한 기능을 가짐이 바람직하나 회로필름의 회로를 적절히 디자인 함으로써 서로 다른 사이즈의 칩들을 적층시키는 것도 가능하다. Of course, the semiconductor chips used in the above embodiments preferably have the same size and the same function, but it is also possible to stack chips of different sizes by appropriately designing the circuit of the circuit film.

플렉시블하게 구부러지는 회로필름을 사용하여 적층시킨 칩들을 연결함으로 써, 기존 패키지 제조 공정을 응용할 수 있으며, 수평 또는 수직으로 적층되는 칩의 개수에 제한을 받지 않을 수 있다. By connecting chips stacked using a flexible bending circuit film, an existing package manufacturing process can be applied, and the number of chips stacked horizontally or vertically can be limited.

특히, 동일한 기능과 용량을 갖는 칩들을 패키징하게 되면, 현저한 용량 증대 및 기능향상효과를 기대할 수 있다.In particular, when packaging chips having the same function and capacity, a significant capacity increase and a function improvement effect can be expected.

Claims (5)

집적회로를 구비한 다수개의 반도체 칩과;A plurality of semiconductor chips having integrated circuits; 상기 칩의 접속패드에 전기접속하여 상기 각각의 칩을 연결하는 회로가 패턴되어 있는 유연한 재질의 회로 필름과; A circuit film of a flexible material in which a circuit for connecting each chip is electrically connected to a connection pad of the chip; 상기 칩과 상기 회로필름이 연결되는 접속부를 봉지하는 봉지재;를 포함하며, And an encapsulation material encapsulating a connection portion to which the chip and the circuit film are connected. 상기 회로필름은 상기 다수개의 칩들의 사이에 연속접속되어 있고 상기 회로필름을 구부려 각각의 칩이 서로 면접하게 적층시킨 것을 특징으로 하는 칩 적층형 반도체 패키지.And the circuit film is continuously connected between the plurality of chips, and each chip is laminated to be in contact with each other by bending the circuit film. 제 1 항에 있어서,The method of claim 1, 상기 회로필름은 FPCB(Flexible PCB)인 것을 특징으로 하는 칩 적층형 반도체 패키지.The circuit film is a chip laminated semiconductor package, characterized in that the FPCB (Flexible PCB). 제 1 항에 있어서, The method of claim 1, 상기 반도체 칩들은 동일한 사이즈인 것을 특징으로 하는 칩 적층형 반도체 패키지.And the semiconductor chips are the same size. 제 1 항 또는 제 2 항에 있어서,The method according to claim 1 or 2, 상기 회로필름은 반도체 칩이 2열 이상 구비된 것을 특징으로 하는 칩 적층형 반도체 패키지.The circuit film is a chip laminated semiconductor package, characterized in that the semiconductor chip is provided with two or more rows. 제 1 항에 있어서,The method of claim 1, 상기 반도체 칩이 적층될 때에는 칩과 칩, 봉지재와 봉지재, 또는 칩과 봉지재가 접착수단으로 접착된 것을 특징으로 하는 칩 적층형 반도체 패키지.When the semiconductor chip is stacked, the chip and chip, the encapsulant and the encapsulant, or the chip and the encapsulant are bonded by an adhesive means.
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KR100818077B1 (en) * 2001-12-29 2008-03-31 주식회사 하이닉스반도체 How to manufacture this laminated package using alignment pins
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US8031475B2 (en) * 2007-07-12 2011-10-04 Stats Chippac, Ltd. Integrated circuit package system with flexible substrate and mounded package
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