KR100746917B1 - 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 - Google Patents
다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 Download PDFInfo
- Publication number
- KR100746917B1 KR100746917B1 KR1020060003406A KR20060003406A KR100746917B1 KR 100746917 B1 KR100746917 B1 KR 100746917B1 KR 1020060003406 A KR1020060003406 A KR 1020060003406A KR 20060003406 A KR20060003406 A KR 20060003406A KR 100746917 B1 KR100746917 B1 KR 100746917B1
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- slurry composition
- polishing
- cmp slurry
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims abstract description 55
- 239000002002 slurry Substances 0.000 title claims abstract description 40
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 19
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000011164 primary particle Substances 0.000 claims description 5
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 5
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910020203 CeO Inorganic materials 0.000 claims description 2
- 229920000831 ionic polymer Polymers 0.000 abstract description 11
- 239000000654 additive Substances 0.000 abstract description 7
- 230000000996 additive effect Effects 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 229910021642 ultra pure water Inorganic materials 0.000 abstract description 3
- 239000012498 ultrapure water Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000004584 polyacrylic acid Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- -1 hydroxyl ions Chemical class 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001446 poly(acrylic acid-co-maleic acid) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
- 금속산화물, 4급암모늄염기화합물을 포함하는 다결정 실리콘 연마용 CMP 슬러리 조성물에 있어서, 양쪽 이온성 고분자를 더 포함하는 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 양쪽 이온성 고분자를 전체 CMP 슬러리 조성물에 대하여 0.001 내지 1중량% 포함하는 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 양쪽 이온성 고분자가 폴리아크릴아마이드-코-아크릴릭산 (poly(acylamide-co-acrylic acid))인 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 4급암모늄염기화합물은 테트라메틸암모늄하이드록사이드(Tetramethylammoniumhydroxide), 테트라에틸암모늄하이드록사이드(Tetraethylammoniumhydroxide), 테트라프로필암모늄하이드록사이드(Tetrapropylammoniumhydroxide), 테트라부틸암모늄하이드록사이드(Tetrabutylammoniumhydroxide) 중의 하나 이상인 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 4급암모늄염기화합물을 전체 CMP 슬러리 조성물에 대하여 0.01 내지 5중량% 포함하는 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 금속산화물은 SiO2, Al2O3, CeO2, ZrO2 및 TiO2 중의 하나 이상이고, 금속산화물의 일차입자크기는 10 내지 200nm, 비표면적은 10 내지 300㎡/g인 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
- 제 1항에 있어서, 상기 금속산화물을 전체 CMP 슬러리 조성물에 대하여 0.1 내지 30중량% 포함하는 것을 특징으로 하는 다결정 실리콘 연마용 CMP 슬러리 조성물.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060003406A KR100746917B1 (ko) | 2006-01-12 | 2006-01-12 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060003406A KR100746917B1 (ko) | 2006-01-12 | 2006-01-12 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070075075A KR20070075075A (ko) | 2007-07-18 |
| KR100746917B1 true KR100746917B1 (ko) | 2007-08-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060003406A Active KR100746917B1 (ko) | 2006-01-12 | 2006-01-12 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100746917B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190063678A (ko) | 2017-11-30 | 2019-06-10 | 김성호 | 기능성 아스콘 플랜트 시스템 |
| KR102638342B1 (ko) * | 2021-04-20 | 2024-02-21 | 주식회사 케이씨텍 | 연마 슬러리 조성물 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040038882A (ko) * | 2002-10-31 | 2004-05-08 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체, 화학 기계 연마 방법 및반도체 장치의 제조 방법 및 화학 기계 연마용 수계분산체 제조용 재료 |
| KR20050096014A (ko) * | 2004-03-29 | 2005-10-05 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
-
2006
- 2006-01-12 KR KR1020060003406A patent/KR100746917B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040038882A (ko) * | 2002-10-31 | 2004-05-08 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체, 화학 기계 연마 방법 및반도체 장치의 제조 방법 및 화학 기계 연마용 수계분산체 제조용 재료 |
| KR20050096014A (ko) * | 2004-03-29 | 2005-10-05 | 한화석유화학 주식회사 | 반도체 얕은 트렌치 소자 분리 공정용 화학적 기계적 연마슬러리 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070075075A (ko) | 2007-07-18 |
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