KR100736423B1 - Manufacturing Method of Image Sensor and Image Sensor Using the Same - Google Patents

Abstract

The present invention relates to a method of manufacturing an image sensor and an image sensor using the same, and more particularly, to a method of manufacturing an image sensor replacing a light blocking technology that uses a material such as a metal in a semiconductor process with a package technology and a method It relates to an image sensor used. The image sensor according to the present invention includes a lower glass including an accommodating frame on an upper surface, an image sensor chip accommodated in the accommodating frame, and a light blocking pattern, and an upper glass positioned on the image sensor chip. According to the present invention, the light blocking technology may be replaced by the package technology in the manufacturing process of the image sensor, and the light sensitivity may be improved by reducing the number of metal wires located in the light receiving area of the image sensor.

Image sensor, light blocking technology, package, metal wiring

Description

Method for manufacturing an image sensor and an image sensor using the same {Method for manufacturing image sensor and image sensor employing it}             

1 is a cross-sectional view showing the configuration of a CMOS image sensor according to the prior art.

2 is a view showing a plane of one pixel in the CMOS image sensor according to the prior art.

Figure 3 is a cross-sectional view showing the configuration of the image sensor is completed the package operation according to an embodiment of the present invention.

Figure 4 is a plan view of the top glass is completed the formation of the light blocking pattern according to an embodiment of the present invention.

5 and 6 are cross-sectional views of the top glass is completed the form of the light blocking pattern according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

301: Upper Glass

303: light blocking pattern

307: image sensor chip

309: storage frame

311: lower glass

The present invention relates to a method for manufacturing an image sensor and an image sensor using the same, and more particularly, to a method for manufacturing an image sensor and a method for manufacturing an image sensor replacing the color process of the image sensor with a package technology.

The image sensor refers to a semiconductor device that converts an optical image into an electrical signal. Device types of image sensors include CCD (Charge Coupled Device) devices and CMOS (Complementary Metal-Oxide-Silicon) devices. CCD-type device is a device in which charge carriers are stored and transferred to capacitors while individual metal-oxide-silicon (MOS) capacitors are located in close proximity to each other. It is a device that adopts the switching method of making the MOS transistor as many as the number of pixels using the technique used and detecting the output sequentially by using the same.

CCD (charge coupled device) has many disadvantages such as complicated driving method, high power consumption, high number of mask process steps, complicated process, and difficulty in making one chip because signal processing circuit cannot be implemented in CCD chip. Recently, in order to overcome such drawbacks, the development of a CMOS image sensor using a sub-micron CMOS manufacturing technology has been studied a lot. The CMOS image sensor forms an image by forming a photodiode and a MOS transistor in a unit pixel (Pixel) and sequentially detects a signal in a switching method, and implements an image.As a CMOS manufacturing technique, the power consumption is low and the number of masks is about 30 to 40 with 20 masks. Compared to CCD process that requires two masks, the process is very simple, and it is possible to make various signal processing circuits and one chip, which is attracting attention as the next generation image sensor.

An image sensor for realizing a color image has a color filter arrayed on an upper portion of a light sensing portion that receives and receives light from outside to generate and accumulate photocharges. The color filter array (CFA) consists of three colors: red, green, and blue, or three colors: yellow, magenta, and cyan. It is made of collar. In addition, the image sensor is composed of a light sensing portion for detecting light and a logic circuit portion for processing the detected light as an electrical signal to make data, and in order to increase the light sensitivity, the area of the light sensing portion in the entire image sensor element ( Efforts have been made to increase the fill factor, but these efforts are limited in a limited area because the logic circuit part cannot be removed essentially. Therefore, in order to increase the light sensitivity, a light condensing technology that changes the path of light incident to a region other than the light sensing portion and collects it into the light sensing portion has emerged. I use it. Referring to FIG. 1, a configuration of a CMOS image sensor including the color filter and the microlens will be described.

1 is a cross-sectional view showing the configuration of a CMOS image sensor according to the prior art.

Referring to FIG. 1, the CMOS image sensor includes a light receiving unit 101, an insulating film 103, a metal wiring 1 105, an intermetal separator 107, a metal wiring 2 109, a protective insulating film 111, and a color filter. 113 and microlens 115. In the CMOS image sensor having such a configuration, first, a light receiving unit 101 such as a photodiode that receives light on the semiconductor substrate to generate photocharges is formed. Thereafter, after the insulating film 103 is formed, the metal wiring 1 105, the intermetallic separator 107, and the metal wiring 2 109 are formed on the insulating film 103. Metal wiring may be further formed after the metal wiring 2 as needed, and the metal wiring is used to increase light transmission efficiency by blocking light from the outside. After the final metal wiring is formed, after the protective insulating layer 111 is formed, the color filter 113 and the microlens 115 of three colors of red, green, and blue are photographed. It is formed by a method such as a method or a dyeing method.

2 is a view showing a plane of one pixel in the CMOS image sensor having the above configuration.

Referring to FIG. 2, the CMOS image sensor may be divided into two parts, a light receiving area 201 capable of receiving light and a metal shielding 203 blocking light. The CMOS image sensor receives the light through the light receiving area 201 at the light receiving unit 101, and forms a metal shielding 203 through the metal wires to block the light. As described above, in order to block light through the metal shielding 203, the number of metal wires increases, thereby increasing the number of processes and naturally decreasing the sensitivity as the distance between the microlens 115 and the light receiver 101 increases. This happens.

SUMMARY OF THE INVENTION An object of the present invention for solving the above problems is to provide an image sensor manufacturing method and an image sensor using the same, which can replace the light blocking technology using a metal wiring in the process of manufacturing an image sensor with a package technology. .

Another object of the present invention is to provide an image sensor manufacturing method that can improve the light sensitivity by reducing the number of metal wiring located in the light receiving area of the image sensor by replacing the light blocking technology in the image sensor manufacturing process and provides an image sensor using the same I would like to.

Another object of the present invention is to provide an image sensor manufacturing method and an image sensor using the same that can improve the yield by simplifying the manufacturing process of the image sensor by reducing the number of metal wires located in the light receiving area of the image sensor.

In order to achieve the above objects, according to an aspect of the present invention, the lower surface is attached to the storage frame on the upper surface; An image sensor chip accommodated in an accommodating frame of the lower glass and including a light receiving unit; And a light blocking pattern formed on an inner surface facing the image sensor chip and a light transmitting portion other than the light blocking pattern, wherein the image sensor chip is mounted such that the light transmitting portion is positioned above the light receiving portion of the image sensor chip. It is possible to provide an image sensor including an upper glass mounted on the lower glass.
In a preferred embodiment, the image sensor chip may further include a metal wire, a color filter and a micro lens.
In addition, the light blocking pattern may be formed by a photolithography process on the inner surface of the upper glass.
In addition, the light blocking pattern may be made of at least one of aluminum metal and black photoresist.
According to another aspect of the invention, forming a light blocking pattern on the upper glass; Mounting an image sensor chip comprising a light receiving unit, a metal wire, a color filter, and a micro lens to a receiving frame attached to an upper surface of the lower glass; And mounting the upper glass on which the light blocking pattern is formed, on an upper portion of the lower glass on which the image sensor chip is mounted, such that a light transmitting portion other than the light blocking pattern is positioned above the light receiving portion of the image sensor chip. It may provide a method.

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Next, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a cross-sectional view illustrating a configuration of an image sensor having completed a package operation according to an exemplary embodiment of the present invention.

Referring to FIG. 3, the image sensor package includes an upper glass 301 including an light blocking pattern 303, an image sensor chip 307, a receiving frame 309, and a lower glass 311. The upper glass 301 and the lower glass 311 are glass substrates to be used in the image sensor package, and the receiving frame 309 has a silicon die for accommodating the image sensor chip 307 in the lower glass 311. Say. The characteristic of the present invention is that the light blocking pattern 303 is formed by performing the light blocking technique performed on the image sensor chip 307 on the inner surface of the upper glass 301 for the package.

In order to package the image sensor according to the present invention, a process of manufacturing the upper glass 301 including the image sensor chip 307 and the light blocking pattern 303 must be preceded. A process of forming the light blocking pattern on the upper glass 301 will be described in detail with reference to FIGS. 4 to 6, and the manufacturing method of the image sensor chip 307 is a conventional image sensor described with reference to FIG. 1. It is the same as the manufacturing method. However, the manufacturing method of the image sensor chip 307 according to the present invention is different from the image sensor manufacturing method according to the prior art in that it is not necessary to form metal wires used for light blocking. Therefore, the image sensor chip 307 according to the present invention may have only one or two layers of metal wires.

When the image sensor chip 307 having the reduced number of metal wires according to the present invention is completed, the image sensor chip 307 is mounted on the receiving frame 309 attached to the upper surface of the lower glass 301. Thereafter, the upper glass 301 is formed on the upper portion of the lower glass 311 on which the image sensor chip 307 is mounted so that the surface on which the light blocking pattern 303 of the upper glass 301 is formed faces the image sensor chip 307. Is mounted. In this case, a predetermined space 305 exists between the image sensor chip 307 and the upper glass 301. The upper glass 301 is formed by the light blocking pattern 303, the light transmitting portion is formed, the upper glass 201 is packaged so that the light transmitting portion is located above the light receiving portion of the image sensor chip 307.

A method of forming the light blocking pattern on the upper glass will be described with reference to FIGS. 4 to 6.

Figure 4 is a plan view of the top glass is completed the formation of the light blocking pattern according to an embodiment of the present invention, Figure 5 is a cross-sectional view of the upper glass cut along a, Figure 6 is a view of the upper glass cut along b It is a cross section.

4 to 6, the photo-etching pattern on the upper glass 301 is used as a photolithography process applied in the conventional semiconductor process. That is, the only difference is whether the base plate to be seated when performing the photolithography process is a silicon wafer or glass.

In order to form the light blocking pattern 303 on the glass substrate to be used in the image sensor package, that is, the upper glass 301, first, a light blocking photoresist is deposited on the inner surface of the upper glass 301. In this case, the inner surface refers to a surface facing the image sensor chip in the process of completing the image sensor package. In this case, the material of the light blocking photoresist may be any material used in the photolithography process including an aluminum metal or a black photoresist having light blocking properties. Thereafter, the light blocking pattern 303 is formed by etching a portion to be positioned above the light receiving unit of the image sensor chip by a photo process.

The upper glass 301 has a light transmitting portion except for the light blocking pattern 303, and when the package is later packaged, the light transmitting portion is positioned above the light receiving portion of the image sensor chip. By forming such a light blocking pattern 303 on the upper glass 301, the light blocking technology using metal wiring in the manufacturing process of the image sensor may be replaced by a package technology.

The present invention is not limited to the above embodiments, and many variations are possible by those skilled in the art within the spirit of the present invention.

According to the present invention, a light blocking technology that uses metal wiring in the process of manufacturing an image sensor can be replaced with a package technology.

According to the present invention, the light blocking technology is replaced by the package technology in the manufacturing process of the image sensor, thereby reducing the number of metal wires located in the light receiving area of the image sensor, thereby improving the light sensitivity.

According to the present invention, by reducing the number of metal wires located in the light receiving area of the image sensor, the manufacturing process of the image sensor can be simplified and the yield can be improved, and the cost reduction in the manufacturing process of the image sensor is also expected.

Claims (7)

A lower glass having an accommodating frame attached to an upper surface thereof; An image sensor chip accommodated in an accommodating frame of the lower glass and including a light receiving unit; And A light blocking pattern formed on an inner surface facing the image sensor chip and a light transmitting portion other than the light blocking pattern, and a lower portion on which the image sensor chip is mounted such that the light transmitting portion is positioned above the light receiving portion of the image sensor chip. Top glass mounted on top of glass Image sensor comprising a. delete The method of claim 1, The image sensor chip further includes a metal wire, a color filter, and a micro lens. Image sensor, characterized in that. The method of claim 1, The light blocking pattern is formed by a photolithography process on the inner surface of the upper glass Image sensor, characterized in that. The method of claim 4, wherein The light blocking pattern is made of at least one of aluminum metal and black photoresist. Image sensor, characterized in that. Forming a light blocking pattern on the upper glass; Mounting an image sensor chip comprising a light receiving unit, a metal wire, a color filter, and a micro lens to a receiving frame attached to an upper surface of the lower glass; And Mounting the upper glass on which the light blocking pattern is formed on an upper portion of the lower glass on which the image sensor chip is mounted such that a light transmitting portion other than the light blocking pattern is positioned above the light receiving portion of the image sensor chip; Image sensor manufacturing method comprising a. delete

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