KR100728790B1 - OLED display and manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device according to the present invention covers a substrate member, a gate wiring including a gate line and a gate electrode formed on the substrate member, and covers the gate wiring. An interlayer insulating film formed of a spin on glass (SOG) film, a data line including a data line formed on the interlayer insulating film, a common power supply line, a source electrode, a drain electrode, and a first electrode extending from the drain electrode; And a pixel defining layer covering the data line and having an opening exposing the first electrode, an organic layer formed on the first electrode in the opening, and a second electrode formed on the pixel defining layer and the organic layer.

Description

Organic light emitting display and manufacturing method thereof {ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME}

1 is a layout view of an organic light emitting diode display according to an exemplary embodiment.

FIG. 2 is a cross-sectional view taken along lines II-II and II′-II ′ of FIG. 1.

3 to 7 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIG.

8 and 9 are graphs in which components of an insulating film formed of a spin on glass film and an insulating film generally formed using infrared spectroscopy are analyzed.

* Explanation of symbols for the main parts of the drawings

10: first thin film transistor 20: second thin film transistor

70 light emitting element 80 power storage element

110 substrate member 120 buffer layer

132 semiconductor layer 140 gate insulating film

151: gate line 155: gate electrode

158: first sustain electrode 160: interlayer insulating film

171: data line 172: common power line

176: source electrode 177: drain electrode

179: first electrode 180: pixel defining layer

187: organic layer 197: electrode

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device and a method of manufacturing the same, which have a simple structure and suppress occurrence of defects and have improved performance.

Recently, a flat panel display device that can be reduced in weight and size by overcoming a disadvantage of a cathode ray tube (CRT) has been spotlighted as a next generation display device. Representative examples of such flat panel displays include a plasma display panel (PDP), a liquid crystal display (LCD), and an organic luminesecent display.

An organic light emitting display device is a self-luminous display device that emits an organic compound to display an image. The organic light emitting display device can secure a wider viewing angle than other flat panel display devices and realize high resolution. The OLED display can be classified into an active matrix (AM) type organic light emitting display device and a passive matrix (PM) type organic light emitting display device according to a driving method.

In an active driving type organic light emitting display device, a pixel, which is a minimum unit for displaying a screen, generally includes a light emitting part for emitting light to display an image, and a circuit part for driving the light emitting part.

The light emitting unit has a diode characteristic and is also called an organic light emitting diode, which includes a positive electrode as a hole injection electrode, a negative electrode as an electron injection electrode, and an organic layer disposed between these electrodes. Has a structure.

The circuit portion typically includes two thin film transistors (TFTs) and one capacitor. Here, an interlayer insulating film is disposed between two sustain electrodes forming the power storage element, and between the gate electrode, the source electrode, and the drain electrode forming the thin film transistor.

One of the two thin film transistors functions as a switching element that selects a light emitting unit to emit light from among the plurality of light emitting units. The other thin film transistor functions as a driving element for applying a driving power for emitting the light emitting layer of the selected light emitting unit.

Conventionally, the drain electrode of the thin film transistor which functions as a driving element, and the positive electrode of the light emitting part are formed separately and interconnected. A separate insulating film is formed between them. That is, separate insulating films were formed below and above the drain electrode.

As described above, the conventional organic light emitting diode display has a problem in that a plurality of conductive layers and many insulating layers are repeatedly formed, which results in a complicated structure and thus, a decrease in productivity due to an increase in manufacturing processes.

In addition, some of the insulating layers form a capacitor and a thin film transistor, and the dielectric constant and planarization characteristics of the insulating layer have a great influence on the performance of the organic light emitting diode display.

That is, the dielectric constant of the insulating layer affects the electrical signal delay (RC delay) phenomenon caused by the capacitance of the power storage element or the resistance and capacitance of the thin film transistor. In addition, if the insulating layer is not formed flat, a structural step may occur in the wiring layer formed on the insulating layer, which may cause problems such as disconnection or poor contact.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problem, and an object thereof is to provide an organic light emitting display device having a simple structure, suppressing occurrence of defects, and having improved performance.

In addition, an object of the present invention is to provide a method of manufacturing the OLED display.

In order to achieve the above object, an organic light emitting diode display according to the present invention includes an interlayer insulating film formed on a substrate member, a gate electrode formed on the substrate member, and a spin on glass (SOG) film covering the gate electrode. A source electrode and a drain electrode formed on the interlayer insulating layer, and an opening extending from the drain electrode to cover the first electrode, the source electrode, the drain electrode, and the first electrode and exposing the first electrode; And a pixel defining layer having an organic layer formed on the first electrode in the opening, and a second electrode formed on the pixel defining layer and the organic layer.

The interlayer insulating layer preferably includes a silicon oxide based material.

The interlayer insulating film preferably includes at least one bonding structure among a silicon-carbon bonding structure and a carbon-hydrogen bonding structure.

It is preferable that the dielectric constant of the interlayer insulating film is in the range of 2 to 100.

The first electrode may be formed to include a reflective material, and the second electrode may be formed to include a transparent conductive material.

The first electrode may be formed to include a transparent conductive material, and the second electrode may be formed to include a reflective material.

The interlayer insulating film is preferably formed by a spin coating method.

The spin-on glass film forming the interlayer insulating film may include at least one of a siloxane compound, a silozne compound, and a silicate compound.

It is preferable to further include a first sustain electrode formed on the same layer as the gate electrode, and a second sustain electrode formed on the same layer as the source electrode, the drain electrode and the first electrode.

In addition, in order to achieve the above object, a method of manufacturing an organic light emitting display device according to the present invention includes forming a gate electrode on a substrate member, covering the gate electrode, and forming a spin on glass (SOG) layer. Forming an insulating film, forming a source electrode, a drain electrode, and a first electrode extending from the drain electrode formed on the interlayer insulating film pattern; covering the source electrode, the drain electrode, and the first electrode; Forming a pixel defining layer having an opening exposing a first electrode, forming an organic layer on the first electrode in the opening, and forming a second electrode on the pixel defining layer and the organic layer do.

The forming of the interlayer insulating film preferably includes a step of applying the spin on glass film using a spin coating method and a step of curing the applied spin on glass film.

The interlayer insulating layer preferably includes a silicon oxide based material.

The interlayer insulating film preferably includes at least one bonding structure among a silicon-carbon bonding structure and a carbon-hydrogen bonding structure.

It is preferable that the dielectric constant of the interlayer insulating film is in the range of 2 to 100.

The interlayer insulating film may include at least one compound of a siloxane compound, a silozne compound, and a silicate compound.

It is preferable to further include a first sustain electrode formed on the same layer as the gate electrode, and a second sustain electrode formed on the same layer as the source electrode, the drain electrode and the first electrode.

As a result, it is possible to simplify the structure of the organic light emitting diode display and to suppress occurrence of defects and to improve performance.

Hereinafter, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the accompanying drawings, an organic light emitting display device including a thin film transistor having a PMOS structure is illustrated. However, the present invention is not necessarily limited thereto, and may be applied to both thin film transistors having an NMOS structure or a CMOS structure.

In addition, in the accompanying drawings, an active matrix (AM) type organic light emitting display having a 2Tr-1Cap structure having two thin film transistors (TFTs) and one capacitor in one pixel. Although illustrated, the present invention is not limited thereto. Accordingly, the organic light emitting diode display may include three or more thin film transistors and two or more capacitors in one pixel, and may be formed to have various structures by further forming additional wires.

In order to clearly describe the present invention, parts irrelevant to the description are omitted, and like reference numerals designate like elements throughout the specification.

In addition, in the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, or the like is said to be "on" or "on" another portion, this includes not only when the other portion is "right over" but also when there is another portion in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

1 is a layout view schematically illustrating an organic light emitting display device according to an exemplary embodiment. FIG. 2 is a cross-sectional view taken along lines II-II and II′-II ′ of FIG. 1. Here, the cross section along the II-II line is shown to the right, and the cross section along the II'-II 'line is shown to the left.

As illustrated in FIG. 1, the organic light emitting diode display 100 includes a first thin film transistor 10, a second thin film transistor 20, a storage device 80, and a light emitting device 70 in one pixel. do. The OLED display 100 further includes a gate line 151 disposed along one direction, a data line 171 and a common power line 172 that are insulated from and cross the gate line 151.

The light emitting device 70 includes an organic light emitting diode (OLED). The organic light emitting diode has a structure including an organic layer disposed between a positive electrode, which is a hole injection electrode, a negative electrode, which is an electron injection electrode, and a positive and negative electrode, and from each electrode Each of the holes and electrons is injected into the organic layer to emit light when the exciton in which the injected holes and electrons are combined falls from the excited state to the ground state.

The electrical storage element 80 includes a first storage electrode 158 and a second storage electrode 178 with an insulating film interposed therebetween.

The first thin film transistor 10 and the second thin film transistor 20 have gate electrodes 152 and 155, source electrodes 173 and 176, drain electrodes 174 and 177, and semiconductor layers 131 and 132, respectively. .

The first thin film transistor 10 is used as a switching element for selecting the light emitting element 70 to emit light. The first gate electrode 152 of the first thin film transistor 10 is electrically connected to the gate line 151, the first source electrode 173 is connected to the data line 171, and the first drain electrode 176. ) Is connected to the first storage electrode 158 of the power storage element 80.

The second thin film transistor 20 applies a driving power to the anode for emitting the organic layer of the selected light emitting device 70. The second gate electrode 155 of the second thin film transistor 20 is connected to the first storage electrode 158 of the power storage device 80, and the second source electrode 176 is connected to the common power line 172. . The first electrode 179 extends integrally from the second drain electrode 177 of the second thin film transistor 20. The first electrode 179 becomes an anode of the light emitting element 70. However, the present invention is not necessarily limited thereto, and the first electrode 179 may be a cathode of the light emitting device 70 according to the driving method of the organic light emitting diode display 100.

As a result, the first thin film transistor 10 is driven by the gate voltage applied to the gate line 151 to transfer the data voltage applied to the data line 171 to the second thin film transistor 20. Do it. The voltage corresponding to the difference between the common voltage applied from the common power supply line 172 to the second thin film transistor 20 and the data voltage transmitted from the first thin film transistor 10 is stored in the power storage element 80, and A current corresponding to the voltage stored in the device 80 flows through the second thin film transistor 20 to the light emitting device 70 so that the light emitting device 70 emits light.

Hereinafter, the structure of the organic light emitting diode display 100 will be described in detail with reference to FIG. 2. 2 illustrates the second thin film transistor 20, the light emitting device 70, and the power storage device 80. Hereinafter, the structure of the thin film transistor will be described with reference to the second thin film transistor 20. Since the structure of the first thin film transistor 10 is the same as that of the second thin film transistor 20, a detailed description thereof will be omitted.

As shown in FIG. 2, a buffer layer 120 is formed on a substrate member 110 formed of an insulating substrate made of glass, quartz, ceramic, plastic, or the like, or a metallic substrate made of stainless steel or the like. The buffer layer 120 serves to prevent infiltration of impurities and planarize the surface, and may be formed of various materials capable of performing such a role. However, the buffer layer 120 is not necessarily required and may be omitted depending on the type of the substrate member 110 and the process conditions.

The semiconductor layer 132 is formed on the buffer layer 120. The semiconductor layer 132 may be formed of polycrystalline silicon. The semiconductor layer 132 includes a channel region 135 in which impurities are not doped, and a source region 136 and a drain region 137 formed by p + doping on both sides of the channel region 135. At this time, the doped ionic material is a P-type impurity such as boron (B), and mainly B ₂ H ₆ is used. Here, these impurities vary depending on the type of thin film transistor.

A gate insulating layer 140 formed of silicon oxide or silicon nitride is formed on the semiconductor layer 132. A gate wiring including a gate electrode 155 and a first storage electrode 158 is formed on the gate insulating layer 140. Although not shown in FIG. 2, the gate wiring further includes a gate line 151 (shown in FIG. 1) and other wiring. In this case, the gate electrode 155 is formed to overlap at least a portion of the semiconductor layer 132, particularly the channel region 135.

Unlike in FIG. 2, the gate lines 155 and 158 may be formed in multiple layers. For example, aluminum or an aluminum alloy is used as the lower layer and molybdenum-tungsten or molybdenum-tungsten nitride is used as the upper layer. The lower layer uses aluminum or aluminum alloy with low specific resistance to prevent signal resistance due to wiring resistance, and the upper layer uses chemicals to compensate for the shortcomings of aluminum or aluminum alloy where corrosion resistance by chemicals is weak and easily oxidized to cause disconnection. It is to use molybdenum-tungsten or molybdenum-tungsten nitride which are highly corrosion-resistant to chemicals. In recent years, molybdenum, aluminum, titanium, tungsten, and the like have been spotlighted as wiring materials.

An interlayer insulating layer 160 covering the gate lines 155 and 158 is formed on the gate insulating layer 140. The interlayer insulating layer 160 is formed of a spin on glass (SOG) film. The spin-on glass film used to form the interlayer insulating layer 160 may include at least one of a siloxane compound, a silozne compound, and a silicate compound. The interlayer insulating layer 160 is formed of a single flat layer by a spin coating method. That is, a spin on glass film is coated by a spin coating method, and the coated spin on glass film is cured to form an interlayer insulating film 160 having a finally flat surface. In this case, the interlayer insulating layer 160 is made of silicon oxide (Si oxide). In addition, the interlayer insulating layer 160 may include at least one bonding structure among a silicon-carbon (Si-C) bonding structure and a carbon-hydrogen (C-H) bonding structure.

In addition, the dielectric constant of the interlayer insulating film 160 is in the range of 2 to 100. The interlayer insulating layer 160 is used as part of the power storage element 80 and the thin film transistor 20. At this time, as the dielectric constant of the interlayer insulating film 160 has a high dielectric constant between 2 and 100, the electrical storage capacity of the electrical storage element 80 is improved. In addition, as the interlayer insulating layer 160 has a low dielectric constant between 2 and 100, the electrical signal delay due to the resistance and capacitance of the thin film transistor 20 may be minimized.

However, when the dielectric constant of the interlayer insulating layer 160 is less than 2 or greater than 100, any one of two characteristics, such as improvement of the capacitance of the power storage device 80 and suppression of signal delay phenomenon of the thin film transistor 20, may be satisfied. There is a problem that is difficult to satisfy the other.

As such, the interlayer insulating layer 160 may be formed flat to prevent defects such as disconnection and short circuits from occurring in the conductive layer formed on the interlayer insulating layer 160. In addition, the interlayer insulating layer 160 may be formed to have an appropriate dielectric constant required by the power storage device 80 within a range that does not affect the signal delay of the thin film transistor 20. In addition, the interlayer insulating layer 160 according to the present invention has the advantage that it can have all the above-mentioned effects even with a single layer. Therefore, the interlayer insulating film 160 having excellent planarization characteristics can be formed, and a thin film can be formed while securing a dielectric constant advantageous for forming the power storage device 80 and the thin film transistor 20. Accordingly, the organic light emitting diode display 100 may be thinly formed as a whole, and the structure may be simplified. In addition, the manufacturing process of the organic light emitting diode display 100 may be simplified.

The gate insulating layer 140 and the interlayer insulating layer 160 have contact holes 166 and 167 exposing the source region 136 and the drain region 137 of the semiconductor layer 132.

On the interlayer insulating layer 160, a data line including a source electrode 176, a drain electrode 177, a second storage electrode 178, and a first electrode 179 extending integrally from the drain electrode is formed. Although not shown in FIG. 2, the data line further includes a data line 171 (shown in FIG. 1), a common power supply line 172 (shown in FIG. 1), and other wires. The source electrode 176 and the drain electrode 177 are connected to the source region 136 and the drain region 137 of the semiconductor layer 132 through the contact holes 166 and 167, respectively.

The pixel defining layer 180 covering the data lines 176, 177, 178, and 179 is formed on the interlayer insulating layer 160. The pixel defining layer 180 has an opening 181 exposing the first electrode 179. The organic layer 187 is formed on the first electrode 179 in the opening 181, and the second electrode 197 is formed on the pixel defining layer 180 and the organic layer 187. That is, the organic layer 187 is disposed between the first electrode 179 and the second electrode 197 in the opening 181 of the pixel defining layer 180.

As shown in FIG. 2, the first electrode 179, the organic layer 187, and the second electrode 197 form an organic light emitting diode (OLED), which is a light emitting device 70. Here, the first electrode 179 becomes a positive electrode of the light emitting device 70, and the second electrode 197 becomes a negative electrode of the light emitting device 70. However, the present invention is not necessarily limited thereto, and according to a driving method of the organic light emitting diode display, the first electrode 179 becomes a cathode of the light emitting element 70, and the second electrode 197 is a light emitting element 70. It can also be the anode of.

One of the first electrode 179 and the second electrode 197 may be formed of a transparent conductive material and the other may be formed of a translucent or reflective material.

When one of the first electrode 179 and the second electrode 197 is formed of a transparent conductive material and the other of the first electrode 179 and the second electrode 197 is formed of a semi-transparent material, it becomes a double-sided light emitting organic light emitting display device. In addition, when the first electrode 177 is formed of a reflective material and the second electrode 197 is formed of a transparent conductive material, a top emission organic light emitting display device is used, and vice versa. When the first electrode 179 is formed of a transparent conductive material, all of the data lines 176, 177, 178, and 179 may be formed of a transparent conductive material.

As the transparent conductive material, materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In ₂ O ₃ ) may be used.

Reflective materials include lithium (Li), calcium (Ca), lithium fluoride / calcium (LiF / Ca), lithium fluoride / aluminum (LiF / Al), aluminium (Al), silver (Ag), magnesium ( Mg) and the like can be used.

In addition, similar to the gate lines 155 and 158, the data lines 176, 177, 178, and 179 may be formed of multiple layers made of different materials to compensate for the disadvantages of each material.

In addition, the arrangement and structure of the gate wirings 155 and 158 and the data wirings 176, 177, 178 and 179 are not necessarily limited to this embodiment. Therefore, various modifications may be made depending on the structure of the thin film transistors 10 and 20 and other circuit wirings. That is, a gate line, a data line, a common power supply line, and other configurations may be formed in a layer different from this embodiment.

The organic layer 187 may be formed of a low molecular weight organic material or a high molecular weight organic material. The organic layer 187 includes an organic light emitting layer, and includes a hole-injection layer (HIL), a hole-transporting layer (HTL), and a hole blocking layer (HIL) formed around the organic light emitting layer. and a hole blocking layer, an electron transport layer (ETL), an electron injection layer (EIL), an electron blocking layer (EBL), and the like.

In addition, although not shown in FIG. 2, an encapsulation member may be further formed on the second electrode 197.

As such, since the first electrode 179 does not form a separate layer and is integrally formed with the drain electrode 177 of the thin film transistor 20 in the same layer as the data line, the structure of the organic light emitting display device 100 is provided. Can be further simplified.

A method of manufacturing the organic light emitting diode display 100 according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 3 to 7.

First, as illustrated in FIG. 3, the buffer layer 120 is formed on the substrate member 110, and the semiconductor layer 132 made of polycrystalline silicon is formed thereon. The semiconductor layer 132 is generally formed by depositing an amorphous silicon layer and then polycrystallizing it. As the method for obtaining the semiconductor layer 132, various methods such as furnace heat treatment, rapid thermal treatment (RTA), excimer laser annealing (ELA), and the like are possible. In particular, sequential lateral solidification (SLS), which is a kind of excimer laser annealing technology, has an advantage in that the semiconductor layer 132 of high quality can be formed with a relatively low number of laser irradiation times. The SLS method is a technique using the fact that grains of polycrystalline silicon grow in a direction perpendicular to the interface at the boundary between the liquid region to which the laser is irradiated and the solid state region to which the laser is not irradiated.

Next, as shown in FIG. 4, after the semiconductor layer 132 is covered with the gate insulating layer 140, a gate wiring including the gate electrode 155 and the first storage electrode 158 is formed. A high concentration of p + ions are implanted into the semiconductor layer 132 using the gate electrode 155 as a mask. The source region 136 and the drain region 137 are formed in the semiconductor layer 132 positioned outside the gate electrode 155 doped with a high concentration of p + ions, respectively, and the source region 136 and the drain region 137 are formed. A channel region 135 in which ions are not doped is formed between them.

Next, as shown in FIG. 5, an interlayer insulating layer 160 covering the gate lines 155 and 158 is formed on the gate insulating layer 140. The interlayer insulating layer 160 is coated on the substrate member 110, that is, on the gate insulating layer 140 while covering the gate wirings 155 and 158 by a spin coating method, and then curing the applied spin on glass layer. To form. In this case, the interlayer insulating layer 160 is made of silicon oxide (Si oxide). In addition, the interlayer insulating layer 160 may include at least one bonding structure among a silicon-carbon (Si-C) bonding structure and a carbon-hydrogen (C-H) bonding structure. In addition, the interlayer insulating film 160 is formed to have a dielectric constant in the range of 2 to 100. The dielectric constant of the interlayer insulating layer 160 may be adjusted by adding an additive to the spin on glass film.

The spin-on glass film used to form the interlayer insulating layer 160 may include at least one of a siloxane compound, a silozne compound, and a silicate compound.

As described above, according to one embodiment of the present invention, the interlayer insulating film 160 is formed as a single flat layer, and at the same time, the power storage device 80 is required within the range that does not affect the signal delay of the thin film transistor 20. It can be formed to have a dielectric constant. Therefore, the organic light emitting diode display 100 may be thinly formed as a whole and the structure may be simplified, thereby simplifying the overall manufacturing process.

Next, as shown in FIG. 6, the interlayer insulating layer 160 and the gate insulating layer 140 are removed to expose the source region 136 and the drain region 137 of the semiconductor layer 132 through a photolithography process. Holes 166 and 167 are formed.

Next, as shown in FIG. 7, a data line including a source electrode 176, a drain electrode 177, a second storage electrode 178, and a first electrode 179 is formed on the interlayer insulating layer 160. do. In this case, the source electrode 176 and the drain electrode 177 are connected to the source region 136 and the drain region 137 of the semiconductor layer 132 through the contact holes 166 and 167, respectively.

Next, a pixel defining layer 180 having an opening 181 covering the data wires 176, 177, and 178 and exposing the first electrode 179 is formed, and is formed on the first electrode 179 in the opening 181. An organic layer 187 is formed on the substrate. The second electrode 197 is formed thereon to complete the organic light emitting diode display 100 illustrated in FIG. 2.

As such, since the first electrode 179 is not formed as a separate layer and is integrally formed with the drain electrode 177 of the thin film transistor 20 in the same layer as the data line, the manufacturing process of the organic light emitting diode display 100 is performed. Can be further simplified.

Hereinafter, referring to FIGS. 8 and 9, the difference between the interlayer insulating film formed by the spin-on glass film and the conventional conventional insulating film will be described by comparing the components thereof.

FIG. 8 is a graph illustrating an analysis of components of an interlayer insulating layer 160 formed of a spin on glass film using infrared spectroscopy, and FIG. 9 is a graph illustrating an analysis of components of an insulating film formed by a general chemical vapor deposition method using infrared spectroscopy. .

As shown in FIG. 8, the interlayer insulating film 160 formed of the spin on glass film has a silicon-carbon bond structure and a carbon-hydrogen bond structure. On the other hand, as shown in Fig. 9, the insulating film formed by the general chemical vapor deposition method has substantially no silicon-carbon bond structure and carbon-hydrogen bond structure compared with the interlayer insulating film 160 formed of the spin-on glass film. It can be seen that.

Accordingly, the component of the interlayer insulating layer 160 may be analyzed to determine whether the interlayer insulating layer 160 is formed of the spin on glass layer.

Although the present invention has been described above, it will be readily understood by those skilled in the art that various modifications and variations are possible without departing from the spirit and scope of the claims set out below.

As described above, the organic light emitting diode display according to the present invention has a simple structure and suppresses occurrence of defects and has improved performance.

That is, the interlayer insulating film may be formed flat to prevent defects such as disconnection and short circuits from occurring in the conductive layer formed on the interlayer insulating film.

In addition, the interlayer insulating film can be formed to have an appropriate dielectric constant required by the power storage element within a range that does not affect the signal delay of the thin film transistor.

In addition, since the interlayer insulating layer is formed of a single layer, both the planarization characteristics and the dielectric constant characteristics can be secured, thereby reducing the overall thickness of the OLED display.

In addition, since the first electrode of the light emitting device does not form a separate layer and is integrally formed with the drain electrode of the thin film transistor in the same layer as the data line, the structure of the organic light emitting diode display may be further simplified.

In addition, the organic light emitting diode display may be manufactured according to the method of manufacturing the organic light emitting diode display according to the present invention.

Claims (16)

Board member, A gate electrode formed on the substrate member, An interlayer insulating film covering the gate electrode and formed of a spin on glass (SOG) film and having a dielectric constant in a range of 2 to 100; A source electrode and a drain electrode formed on the interlayer insulating film, A first electrode extending from the drain electrode and formed on the same layer as the drain electrode, A pixel defining layer covering the source electrode, the drain electrode, and the first electrode and having an opening exposing the first electrode; An organic layer formed on the first electrode in the opening, and A second electrode formed on the pixel defining layer and the organic layer An organic light emitting display device comprising a. In claim 1, The interlayer insulating layer includes a silicon oxide based material. In claim 2, The interlayer insulating layer includes at least one of a silicon-carbon bond structure and a carbon-hydrogen bond structure. delete In claim 1, The first electrode is formed of a reflective material, and the second electrode is formed of a transparent conductive material. In claim 1, The first electrode is formed of a transparent conductive material, and the second electrode is formed of a reflective material. In claim 1, The interlayer insulating layer is formed by a spin coating method. In claim 1, The spin on glass layer forming the interlayer insulating layer may include at least one compound selected from a siloxane compound, a silozne compound, and a silicate compound. In claim 1, And a second storage electrode formed on the same layer as the gate electrode, and a second storage electrode formed on the same layer as the source electrode, the drain electrode, and the first electrode. Forming a gate electrode on the substrate member, Forming an interlayer insulating film covering the gate electrode and having a spin on glass (SOG) film having a dielectric constant in a range of 2 to 100, Forming a source electrode, a drain electrode, and a first electrode integrally extending from the drain electrode on the interlayer insulating layer pattern; Forming a pixel defining layer covering the source electrode, the drain electrode and the first electrode and having an opening exposing the first electrode; Forming an organic layer on the first electrode in the opening, and Forming a second electrode on the pixel defining layer and the organic layer Method of manufacturing an organic light emitting display device comprising a. In claim 10, The forming of the interlayer insulating film may include applying the spin on glass film using a spin coating method and curing the applied spin on glass film. In claim 10, The interlayer insulating layer includes a silicon oxide based material. In claim 12, The interlayer insulating layer may include at least one of a silicon-carbon bond structure and a carbon-hydrogen bond structure. delete In claim 10, The interlayer insulating layer may include at least one of a siloxane compound, a silozne compound, and a silicate compound. In claim 10, And a second storage electrode formed on the same layer as the gate electrode, and a second storage electrode formed on the same layer as the source electrode, the drain electrode, and the first electrode.

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