KR100721942B1 - Organic electroluminescent device and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a method for manufacturing the same, the organic light emitting display device according to the present invention, a substrate; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And a capping layer formed on any one of regions corresponding to the R, G, and B pixels on the second electrode.

OLED, capping layer, luminous efficiency, refractive index

Description

Organic electroluminescent device and its manufacturing method {Organic Electroluminescence Display Device and Fabricating Method of the same}

1 is a cross-sectional view showing the structure of a conventional organic light emitting display device.

2 is a cross-sectional view showing the structure of an organic light emitting display device according to the present invention;

3A is a graph showing the luminous efficiency of an organic film layer formed in an R pixel according to the thickness of a capping layer.

3B is a graph showing the luminous efficiency of an organic layer formed on a G pixel according to the thickness of a capping layer.

3C is a graph showing power consumption of an organic film layer formed in B pixel according to the thickness of a capping layer.

4 is a cross-sectional view showing a capping layer forming method of an organic light emitting display device according to Example 1 of the present invention;

5A to 6B are cross-sectional views illustrating processes of forming a capping layer of an organic light emitting display device according to Example 2 of the present invention.

7A to 8B are cross-sectional views illustrating processes of forming a capping layer of an organic light emitting display device according to Example 3 of the present invention.

9 is a graph showing the refractive index according to the wavelength of the organic material of the present invention.

Explanation of symbols on the main parts of the drawings

200 substrate 230 first electrode

240: pixel defining layer 245: opening

250a, 250b, 250c: organic layer 260: second electrode

270A, 270B, 270C: Capping Layer

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, a top emission organic light emitting display device which maximizes the luminous efficiency of the organic film layer formed on the R, G, and B pixels and minimizes power consumption. And a method for producing the same.

Among flat panel display devices, an organic electroluminescence display device is a self-luminous display device that electrically excites an organic compound to emit light. In addition, the process can be simplified, low temperature production is possible, response speed is 1ms or less, high speed response speed, low power consumption, wide viewing angle and high contrast.

The organic light emitting device includes an organic light emitting layer between an anode electrode and a cathode electrode, so that holes supplied from the anode electrode and electrons received from the cathode are combined in the organic light emitting layer to form an exciton, a hole-electron pair, and again. The excitons emit light by energy generated when returning to the ground state, and may be divided into a bottom emission type and a top emission type according to a direction in which light generated from the organic emission layer is emitted.

1 is a cross-sectional view showing the structure of a conventional top-emitting organic light emitting display device.

Referring to FIG. 1, a patterned first electrode 130 is formed on a transparent substrate 100 made of glass or plastic. The first electrode 130 includes a reflective film 110 made of a metal having high reflectivity such as aluminum (Al), aluminum-neodynium (Al-Nd), silver (Ag), and a work function. Is formed of a transparent electrode 120 such as high indium tin oxide (ITO) or indium zinc oxide (IZO).

The pixel defining layer 140 is formed on the entire surface of the substrate including the first electrode 130 to separate the pixels by R, G, and B. The pixel defining layer 12 may be formed of one material selected from the group consisting of acrylic resin and polyimide (PI), and is patterned to have an opening 145 on the first electrode.

The organic layer 150a, 150b, 150c is formed in each of the R, G, and B pixels in the opening 145. The organic layer may include at least an organic light emitting layer and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

The second electrode 160 is formed on the entire surface of the substrate including the organic layer 150a, 150b, 150c. The second electrode 160 has a thin thickness so as to transmit light using a conductive metal having a low work function, that is, Mg, Ag, Al, Ca, and an alloy thereof. It is formed of a transmissive electrode or a transparent electrode such as ITO or IZO.

A capping layer 170 is formed on the second electrode 160. The top emission type organic light emitting device emits light in a direction opposite to the substrate, which has an advantage that the aperture ratio is wider than that of the bottom emission type organic light emitting device. In order to improve the light extraction rate of the light emitting device, the capping layer 170 as described above is introduced.

When the capping layer 170 is formed on the second electrode 160, the path difference occurs because the light transmitted through the second electrode 160 goes out through another interference path. The light emitted from the two electrodes is totally reflected to reduce the amount of loss and increase the amount of transmission to increase the luminous efficiency.

However, in the related art, the capping layer 170 is formed to have a uniform thickness without considering emission wavelengths of the R, G, and B organic light emitting layers, and light generated from the upper electrode is laminated without considering the refractive index of the capping layer. The loss caused by total reflection causes a problem that the efficiency of the organic light emitting diode is reduced.

In addition, when the capping layer is formed of an inorganic film, the film is formed by a sputtering method at a high temperature, which causes thermal damage to the organic film layer, resulting in a decrease in life and a dark spot.

Accordingly, the present invention has been made to solve the above problems, and the organic light emitting device and the manufacturing thereof, which can improve the luminous efficiency of the organic film layer formed on the R, G, B pixels and minimize the power consumption The purpose is to provide a method.

The present invention to achieve the above object, the substrate; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And a capping layer formed on any one of regions corresponding to R, G, and B pixels on the second electrode.

In addition, the present invention, a substrate; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; Another object of the present invention is to provide an organic light emitting display device including a capping layer formed in any two regions corresponding to R, G, and B pixels on the second electrode.

And the present invention, a substrate; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And a capping layer formed on the second electrode, wherein the capping layer has a thickness different from at least one region corresponding to the R, G, and B pixels with a thickness different from the rest of the region. Another object is to provide a light emitting device.

(Example)

Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention in order to explain the present invention in more detail. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms.

2 is a cross-sectional view of a top-emitting organic light emitting display device according to the present invention. Hereinafter, a method of manufacturing the top-emitting organic light emitting display device according to the present invention will be described.

Referring to FIG. 2, the reflective film material and the first electrode material are sequentially deposited on the substrate 200 having a predetermined substructure.

The reflective film material is 500-1200 Å using silver (Ag) or silver (Ag), which has the highest reflectance, and a silver alloy containing samarium (Sm), tebilium (Tb), gold (Au), and copper (Cu). The first electrode material is deposited to a thickness of 50 to 130 kW using indium tin oxide (ITO), IZO, In ₂ O _3, or the like.

Then, the first electrode 230 including the reflective film 210 and the transparent conductive film 220 is formed using a mask (not shown) formed by a photo process.

Subsequently, a pixel definition layer 240 is formed on the substrate resultant including the first electrode 230 to separate the R, G, and B pixels.

The pixel definition layer 240 may be deposited using one material selected from the group consisting of acrylic resin and polyimide (PI), and may be patterned to have an opening 245 on the first electrode.

Next, the organic layer 250a, 250b, 250c is formed in each of the R, G, and B pixels in the opening 245 of the pixel definition layer.

The organic layer 250a, 250b, 250c includes at least an organic light emitting layer, and when the first electrode 230 is an anode, a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked. It is formed to have a structure.

The organic light emitting layer may be a low molecular material or a high molecular material, and the low molecular material may include an aluminy chinolium complex (Alq3), anthracene, cyclopentadiene, BeBq2, Almq, ZnPBO, Balq, and DPVBi. , BSA-2, 2PSP, and the like, and are most preferably formed of an aluminy quinolium composite (Alq3). Examples of the polymer material include polyphenylene (PPP; Polyphenylene) and derivatives thereof, poly (p-phenylenevinylene) (PPV; poly (p-phenylenevinylene)) and derivatives thereof, and polythiophene (PT) and its derivatives. Derivatives.

The hole injection layer may be formed of any one selected from phthalocyanine copper (CuPc: Copper Phthalocyanine), PEDOT, m-MTDATA, and triphenylamine. The hole transport layer comprises at least one hole transport compound, for example an aromatic tertiary amine, which is a compound containing at least one trivalent nitrogen atom bonded only to carbon atoms, at least one of which is a member of the aromatic ring. . In one form, the aromatic tertiary amine may be an arylamine such as monoarylamine, diarylamine, triarylamine or polymeric arylamine.

A preferred thin film forming material useful for forming the electron transport layer is a metal chelated oxynoid compound comprising a chelate of auxin itself (commonly referred to as '8-quinolinol' or '8-hydroxyquinoline'). . Such compounds help to inject and transport electrons, exhibit high levels of performance, and are readily prepared in the form of thin films. Other electron transport materials include butadiene derivatives, heterocyclic optical brighteners. Benzazole and triazine are also useful electron transport materials. In addition, when a dopant is applied to a light emitting layer, an aluminy quinolium composite (Alq3), which is used as a host material of the light emitting layer, also has characteristics as an electron transporter, and thus is widely used.

Subsequently, a second electrode 260 is formed on the entire surface of the substrate including the organic layers 250a, 250b, and 250c.

The second electrode 260 may be formed of a transparent electrode such as ITO or IZO, or may be selected from the group consisting of Mg, Ag, Al, Ca, and alloys having a low work function to transmit light having a small thickness. It is formed of an electrode, preferably MgAg.

Next, a capping layer is formed on the second electrode 260. In this case, when the capping layer is introduced on the second electrode 260, the light is transmitted through the second electrode to the outside through another interference path, thereby causing a difference in path. That is, the light reflected at the interface between the capping layer and the external air layer is reflected back from the surface of the lower second electrode again to the outside, so that the light from the second electrode is totally reflected and lost, and the amount of transmitted light is increased. Luminous efficiency is increased.

However, since the emission wavelengths for each of the R, G, and B pixels are different, an optimal luminous efficiency may be obtained when the thickness of the region corresponding to each pixel is differently formed when the capping layer is formed.

Tables 1a, 1b, and 1c below show the efficiency (Cd / A) of the R and G pixels and power consumption of the B pixels according to the thickness of the capping layer, and FIGS. 3a, 3b, and 3c illustrate Tables 1a, 1b, and 1c above. It is a graph created according to. (In the case of B, since the change in color coordinates is sensitive to the total power consumption, the absolute comparison of efficiency values is meaningless, so power consumption considering both color coordinates and efficiency values is evaluated.)

Capping Layer Thickness x color coordinate y color coordinate L emission efficiency (cd / A) 400 0.682 0.317 12.52 500 0.684 0.314 14.97 600 0.687 0.312 15.90 700 0.682 0.317 19.06 800 0.680 0.318 20.67 900 0.682 0.316 20.91 1000 0.694 0.303 16.65 1100 0.697 0.300 14.28 1200 0.699 0.297 11.01

Capping Layer Thickness x color coordinate y color coordinate G luminous efficiency (cd / A) 400 0.294 0.669 66.89 500 0.292 0.670 71.42 600 0.281 0.680 78.90 700 0.266 0.693 79.60 800 0.258 0.702 77.31 900 0.252 0.707 70.61 1000 0.262 0.704 64.44

Capping Layer Thickness x color coordinate y color coordinate B power consumption (mW) 400 0.138 0.096 202.600 500 0.137 0.094 195.600 600 0.137 0.088 190.200 700 0.134 0.092 201.900 800 0.132 0.094 215.100

Referring to Table 1 and FIG. 3A, in the case of the R pixel, the luminous efficiency of 15 cd / A or more can be obtained when the thickness of the capping layer is about 600 to 1000, and preferably about 20 cd when the thickness of the capping layer is about 700 to 900 GHz. It shows a high luminous efficiency of / A.

Referring to Table 1 and FIG. 3B, in the case of the G pixel, when the thickness of the capping layer is about 500 to 900, light emission efficiency of about 70 cd / A or more may be obtained. It shows a high luminous efficiency of cd / A.

Referring to Table 1 and FIG. 3C, in the case of the B pixel, when the thickness of the capping layer is about 450 mW to 350 mW, power consumption is about 200 mW or less, and when about 500 mW to 600 mW, the power consumption is about 190 mW. It can be seen that the minimum.

Accordingly, it can be seen that the thicknesses of the capping layers for obtaining the maximum efficiency for each of the R, G, and B pixels are different according to the graph as described above. Accordingly, the capping layers corresponding to the R pixels are 600 to 1000 mW, The capping layer corresponding to the G pixel is 500 to 900 mW, and the capping layer corresponding to the B pixel is 450 to 650 mW to obtain the maximum luminous efficiency.

Preferably, the capping layer corresponding to the R pixel is 700 to 900 mV, the capping layer corresponding to the G pixel is 600 to 800 mV, and the capping layer corresponding to the B pixel is 500 to 600 mV.

The following relates to a method of manufacturing an organic light emitting display device according to Embodiment 1 of the present invention, and more particularly, to a method of forming a capping layer in any one of regions corresponding to R, G, and B pixels on a second electrode. .

According to the above Tables 1a to 1c, the luminous efficiency of the G pixel is considerably higher than that of the R or B pixel. Therefore, the luminous efficiency of the R or B pixel can be increased by forming a capping layer only on the R or B pixel.

4 is a cross-sectional view illustrating a method of forming a capping layer in a region corresponding to an R pixel on a second electrode.

Referring to FIG. 4, a fine portion is formed in a region corresponding to the R pixel on the second electrode 260 of the substrate 200 on which the first electrode (not shown), the organic layer (not shown), and the second electrode 260 are formed. The capping layer 270A is formed using the metal mask 300.

At this time, in order to maximize the luminous efficiency, the capping layer 270A corresponding to the R pixel has a thickness of 600 to 1000 mW, preferably 700 to 900 mW.

In this embodiment, the capping layer is formed in the region corresponding to the R pixel, but the capping layer may be formed in the region corresponding to the B pixel, and the thickness of the capping layer corresponding to the B pixel is preferably 450 to 650 kPa. Should be 500 to 600 내지.

The following relates to a method of manufacturing an organic light emitting display device according to Embodiment 2 of the present invention, and more particularly to a method of forming a capping layer in any two of the regions corresponding to the R, G, and B pixels on the second electrode. .

As described above, since the efficiency of R or B is considerably lower than that of the G pixel, in Embodiment 2 of the present invention, a capping layer is formed in a region corresponding to the R and B pixels on the second electrode.

5A through 5B are cross-sectional views illustrating a method of forming a capping layer in a region corresponding to R and B pixels on a second electrode.

Referring to FIG. 5A, a capping layer 270A is formed in a region corresponding to an R pixel by using the fine metal mask 300. At this time, in order to maximize the luminous efficiency of the R pixel as described above, the thickness of the capping layer corresponding to the R pixel should be 600 to 1000 mW, preferably 700 to 900 mW.

Next, referring to FIG. 5B, the capping layer 270C is formed in a region corresponding to the B pixel by using the fine metal mask 320. At this time, in order to maximize the luminous efficiency of the B pixel as described above, the thickness of the capping layer 270C corresponding to the B pixel should be 450 to 650 mW, preferably 500 to 600 mW.

Here, the capping layers formed in the region corresponding to the R pixel and the region corresponding to the B pixel have different thicknesses in order to maximize the luminous efficiency of the R and B pixels. It can also be formed.

6A and 6B are cross-sectional views of processes for describing another method of differently forming capping layers corresponding to R and B pixels.

Referring to FIG. 6A, regions corresponding to R and B pixels on the second electrode 260 of the substrate 200 on which the first electrode, the organic layer, and the second electrode 260 are formed. The first sub capping layer 270d is formed by using the emimetal mask 300. 6B, the second sub capping layer 270a is formed in a region corresponding to the R pixel on the first sub capping layer 270d using the fine metal mask 310.

At this time, the thickness of the first sub capping layer 270d should be formed to be 450 to 650 Å, preferably 500 to 600 Å, in order to optimize the luminous efficiency of B, and the thickness of the second sub capping layer 270a. In order to optimize the luminous efficiency of R, the sum of the thicknesses with the first sub capping layer 270d should be 600 to 1000 mW, preferably 700 to 900 mW.

In the present embodiment, the capping layer corresponding to the R, G, and B pixels is formed using a fine metal mask. Alternatively, the capping layer may be formed using a photolithography process or a halftone mask.

The following is a method of manufacturing an organic light emitting display device according to Embodiment 3 of the present invention. In particular, at least one or more of the areas corresponding to the R, G, and B pixels on the second electrode have different thicknesses from other areas. A method for forming a capping layer.

7A to 7C are cross-sectional views of processes for describing a method of manufacturing an organic light emitting display device according to Embodiment 3 of the present invention.

Referring to FIG. 7A, an area of the substrate 200 on which the first electrode (not shown), the organic layer (not shown), and the second electrode 260 are formed is fine in an area corresponding to the R pixel on the second electrode 260. The capping layer 270A is formed using the metal mask 300. In this case, the capping layer 270A has a thickness of 600 to 1000 mW, preferably 700 to 900 mW, in order to maximize the luminous efficiency of the R pixel.

Referring to FIG. 7B, a capping layer 270B is formed in the region corresponding to the G pixel on the second electrode 260 by using the fine metal mask 310. At this time, the capping layer 270B is formed to have a thickness of 500 to 900 mW, preferably 600 to 800 mW, in order to maximize the luminous efficiency of the G pixel.

Next, referring to FIG. 7C, the capping layer 270C is formed in the region corresponding to the B organic film layer on the second electrode 260 by using the fine metal mask 320. At this time, the thickness of the capping layer 270C is formed to be 450 to 650 Å, preferably 500 to 600 Å to maximize the luminous efficiency of the B pixel.

In this embodiment, the capping layer corresponding to the R, G, and B pixels may be formed using a photolithography process, a halftone mask, or the like in addition to the fine metal mask.

In the above process, capping layers having different thicknesses are formed to maximize the luminous efficiency of the R, G, and B pixels, but in order to shorten the process, only the thickness of the region corresponding to the R or B pixel having the low luminous efficiency is different. It may be formed.

8A and 8B are cross-sectional views illustrating a method of forming a capping layer such that the capping layer corresponding to the R organic film layer has a different thickness from other regions.

Referring to FIG. 8A, a fine portion is formed in an area corresponding to the R pixel on the second electrode 260 of the substrate 200 on which the first electrode (not shown), the organic layer (not shown), and the second electrode 260 are formed. The first sub capping layer 270a is formed to a thickness of 200 Å using the metal mask 300.

Subsequently, referring to FIG. 8B, a second sub capping layer 270 d is formed on the entire surface of the substrate including the first sub capping layer 270 a at a thickness of 600 μs.

As described above, the first sub capping layer 270a corresponding to the R pixel is formed, and then the second sub capping layer 270d is formed as a whole. Since the capping layer corresponding to the pixel is formed to be 600 ,, the maximum luminous efficiency can be obtained in a minimum process.

Meanwhile, the capping layers 270A, 270B, and 270C may be formed using an organic material, and the organic material preferably has a high refractive index of 1.7 to 2.4 to reduce total reflection of light generated from the second electrode.

Here, the organic material may be selected from materials consisting of arylenediamine derivatives, triamine derivatives, CBP, or aluminy chinolium complexes (Alq3).

9 is a graph showing the refractive index of the organic material according to the present invention.

9, for the wavelength of 380nm to 1190nm, the arylenediamine derivative (A) is 1.7 to 2.4, the triamine derivative (B) is 1.7 to 2.1, the CBP (C) is 1.7 to 2.0, Alq3 (D) is It can be seen that 1.7 to 2.0 and Blaq (E) have a refractive index of 1.5 to 1.7. Therefore, it is most preferable to use an arylenediamine derivative (A) having a refractive index of 1.7 to 2.4.

As the organic material has a refractive index of 1.7 or more, the amount of light reflected and lost by the second electrode may be reduced, and the amount of light transmitted may be increased to increase the luminous efficiency of the R, G, and B organic film layers. The closer to 2.4, the better the efficiency.

In addition, the capping layers 270A, 270B, and 270C are preferably formed by a vacuum deposition method. As a result, it is possible to prevent thermal damage and dark spot generation of the organic film layer formed for each of R, G, and B pixels, which were conventionally formed by sputtering and forming the protective film at high temperature using an inorganic material.

The organic light emitting device manufactured by the above process may form the capping layer with a different thickness for each of the R, G, and B pixels, thereby obtaining maximum luminous efficiency.

In addition, the capping layer is formed by vacuum deposition using an organic material having a refractive index of 1.7 to 2.4 to reduce the total reflection of the light emitted through the second electrode, and thermal damage of the organic film layer formed for each R, G, and B pixels, and By preventing the occurrence of dark spots can extend the life of the device and maximize the luminous efficiency to significantly improve the brightness of the device.

While the invention has been shown and described with reference to certain preferred embodiments, the invention is not so limited, and the invention is not limited to the scope and spirit of the invention as defined by the following claims. It will be readily apparent to one of ordinary skill in the art that various modifications and variations can be made.

As described above, the present invention can maximize the luminous efficiency of the organic film layer formed for each R, G, B pixels and minimize the power consumption.

In addition, the present invention can improve the brightness of the device by preventing the light loss due to total reflection of the light and increase the amount of light transmitted, and prevents thermal damage and dark spots of the organic film layer formed for each R, G, B pixels This can extend the life of the device.

Claims (35)

Board; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And And a capping layer formed in a region corresponding to the R or B pixel on the second electrode. The method of claim 1, The capping layer has a thickness of 600 to 1000 mW when it corresponds to an R pixel, and 450 to 650 mW when it corresponds to a B pixel. The method of claim 2, The thickness of the capping layer is 700 to 900Å when the thickness corresponding to the R pixel, 500 to 600Å when the organic light emitting device corresponding to the B pixel. Board; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And And a capping layer formed in a region corresponding to the R and B pixels on the second electrode. The method of claim 4, wherein The thickness of the capping layer is an organic light emitting device, characterized in that 600 to 650Å The method of claim 4, wherein The capping layer is an organic light emitting display device, characterized in that the thickness of the region corresponding to the R and B pixels are different. The method of claim 6, The thickness of the region corresponding to the R pixel of the capping layer is 600 to 1000Å, the thickness of the region corresponding to the B pixel is 450 to 650Å. The method of claim 7, wherein The thickness of the region corresponding to the R pixel of the capping layer is 700 to 900Å, the thickness of the region corresponding to the B pixel is 500 to 600Å. Board; A first electrode including a reflective film formed on the substrate; An organic layer formed on each of the R, G, and B pixels on the first electrode; A second electrode formed on the organic layer; And And a capping layer formed on the second electrode. The capping layer is an organic light emitting display device, characterized in that the thickness of at least one of the regions corresponding to the R, G, B pixels is different from the thickness of the other region. The method of claim 9, The thickness of the region corresponding to the R pixel of the capping layer is 600 to 1000Å, the thickness of the region corresponding to the G pixel is 500 to 900Å, and the thickness of the region corresponding to the B pixel is 450 to 650Å. Electroluminescent element. The method of claim 10, The thickness of the region of the capping layer corresponding to the R pixel is 700 to 900Å, the thickness of the region corresponding to the G pixel is 600 to 800Å, and the thickness of the region corresponding to the B pixel is 500 to 600Å. Electroluminescent element. The method according to any one of claims 1 to 11, The capping layer is an organic light emitting device, characterized in that formed with an organic material. The method of claim 12, The organic material of the organic light emitting device, characterized in that having a refractive index of 1.7 to 2.4. The method of claim 13, The organic material is an organic light emitting display device, characterized in that any one selected from the group consisting of triamine derivatives, arylenediamine derivatives, CBP and aluminy quinolium complex (Alq3). The method according to any one of claims 1, 4 and 9, The first electrode is an organic light emitting device, characterized in that the transparent electrode made of ITO or IZO including a reflective film. The method of claim 15, The reflective film is any one selected from the group consisting of silver (Ag) or silver alloys consisting of silver and samarium (Sm), tebirium (Tb), gold (Au), and copper (Cu). device. Providing a substrate; Forming a first electrode including a reflective film on the substrate; Forming an organic layer on each of the R, G, and B pixels on the first electrode; Forming a second electrode on the organic layer; And And forming a capping layer in a region corresponding to the R or B pixel on the second electrode. The method of claim 17, The capping layer is formed to a thickness of 600 to 1000Å when the corresponding to the R pixel, and a method of manufacturing an organic light emitting device, characterized in that formed to a thickness of 450 to 650Å when corresponding to the B pixel. The method of claim 18, The capping layer is formed to a thickness of 700 to 900Å when the corresponding to the R pixel, and a method of manufacturing an organic light emitting device, characterized in that formed to a thickness of 500 to 600Å when corresponding to the B pixel. Providing a substrate; Forming a first electrode including a reflective film on the substrate; Forming an organic layer on each of the R, G, and B pixels on the first electrode; Forming a second electrode on the organic layer; And And forming a capping layer in a region corresponding to the R and B pixels on the second electrode. The method of claim 20, The capping layer is a manufacturing method of the organic light emitting device, characterized in that formed in a thickness of 600 to 650Å. The method of claim 20, Forming a capping layer in a region corresponding to the R and B pixels on the second electrode, the method of manufacturing an organic light emitting device, characterized in that to form a different thickness. The method of claim 22, And a region corresponding to the R pixel of the capping layer is formed to a thickness of 600 to 1000 GPa, and a region corresponding to the B pixel is formed to a thickness of 450 to 650 GPa. The method of claim 23, The thickness of the region corresponding to the R pixel of the capping layer is 700 to 900Å, the thickness of the region corresponding to the B pixel is 500 to 600Å. The method of claim 22, Forming a capping layer in any two of the regions corresponding to the R, G, B pixels on the second electrode, Forming a first sub capping layer on any one of regions corresponding to R, G, and B pixels on the second electrode; And And forming a second sub capping layer on a region different from the first sub capping layer. The method of claim 22, Forming a capping layer in any two of the regions corresponding to the R, G, B pixels on the second electrode, Forming a first sub capping layer in any two regions of the regions corresponding to the R, G, and B pixels on the second electrode; And Forming a second sub capping layer on the first sub capping layer of any one of the two regions; and manufacturing the organic light emitting device. Providing a substrate; Forming a first electrode including a reflective film on the substrate; Forming an organic layer on each of the R, G, and B pixels on the first electrode; Forming a second electrode on the organic layer; And And forming a capping layer on the second electrode by using a vacuum deposition method or a photolithography method. The capping layer is a method of manufacturing an organic light emitting display device, characterized in that at least one of the regions corresponding to the R, G, B pixels is formed to have a different thickness from the other region. The method of claim 27, In the capping layer, an area corresponding to the R pixel is 600 to 1000 mW, an area corresponding to the G pixel is 500 to 900 mW, and an area corresponding to the G pixel is formed to a thickness of 600 to 800 mW. Manufacturing method. The method of claim 28, In the capping layer, an area corresponding to the R pixel is 700 to 900 mW, an area corresponding to the B pixel is 450 to 650 mW, and an area corresponding to the B pixel is 500 to 600 mW. Manufacturing method. The method of claim 27, Forming the capping layer on the second electrode, Forming a first sub capping layer on at least one of regions corresponding to R, G, and B pixels on the second electrode; And Forming a second sub capping layer on the first sub-capping layer and the remaining area; manufacturing method of an organic light emitting device comprising a. The method of claim 27, Forming the capping layer on the second electrode, Forming a first subcapping layer on the second electrode; Forming a second sub capping layer in any two regions of regions corresponding to R, G, and B pixels on the first sub capping layer; And Forming a third sub capping layer in any region on the second sub capping layer; manufacturing method of an organic light emitting device comprising a. The method of any one of claims 17 to 31, The capping layer is a method of manufacturing an organic light emitting device, characterized in that formed with an organic material. The method of claim 32, The organic material manufacturing method of the organic light emitting device, characterized in that having a refractive index of 1.7 to 2.4. The method of claim 33, wherein The organic material is a method of manufacturing an organic light emitting display device, characterized in that formed with any one selected from the group consisting of triamine derivatives, arylenediamine derivatives, CBP and aluminy chironium complex (Alq3). delete

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