KR100712109B1 - Organic electroluminescent display and manufacturing method thereof - Google Patents

Abstract

The present invention connects an antistatic diode to an end of at least one of a scan line, a data line, and a common power line of an organic light emitting display device, and connects the diode to a cathode bus line, thereby generating static electricity generated in the light emitting unit. The present invention relates to an organic light emitting display device and a method of manufacturing the same, wherein the organic light emitting display device protects the elements formed in the light emitting part from static electricity.

An organic electroluminescent display and a method of manufacturing the same according to the present invention include a substrate having a light emitting portion and a peripheral portion; And the light emitting unit includes a first pixel, at least an organic layer including an organic emission layer, and a second pixel including a second electrode, a scan line, a data line, and a common power line to supply a signal or power to the unit pixel. The peripheral portion includes a common power bus line and a cathode bus line, wherein a diode is connected to an end of at least one of the scan line, the data line, and the common power line, and the diode is connected to the cathode bus line. The organic electroluminescent display device and its manufacturing method have technical features.

Therefore, the organic light emitting display device and a method of manufacturing the same of the present invention connect the antistatic diodes to the ends of at least one of the scan line, the data line, and the common power line of the organic light emitting display device, thereby preventing static electricity from the light emitting unit. There is an effect that can solve the problems caused by the occurrence.

Electrostatic diode

Description

Organic electroluminescent display device and manufacturing method therefor {Organic electroluminescence display device and methd for fabricating}             

1 is a plan view of an organic light emitting display device according to the prior art.

2 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.

3A to 3D are plan views illustrating a manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention.

 <Description of the symbols for the main parts of the drawings>

203: scan line 204: data line

205: common power line 210: common power bus line

211: scan drive 212: data drive

213: cathode bus line 215: antistatic diode

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to connect an antistatic diode to each end of at least one of the scan line, data line and common power line of the organic light emitting display device, An organic electroluminescent display device having the diode connected to a cathode bus line is provided.

Recently, a liquid crystal display device, an organic electroluminescence device, or a plasma display plane, which solve the shortcomings of the conventional display device, which are heavy and large, such as a cathode ray tube. A flat panel display device, such as), has attracted attention.

At this time, since the liquid crystal display is not a light emitting device but a light receiving device, there is a limit in brightness, contrast, viewing angle, and large area, and although the PDP is a self-light emitting device, it is heavier than other flat panel display devices and consumes more weight. On the other hand, the organic electroluminescent device is excellent in viewing angle, contrast, etc., because it is a self-luminous device, and because it does not require a backlight, it is possible to be light and thin, and in terms of power consumption. It is advantageous.

In addition, since it is possible to drive a DC low voltage, a fast response speed, and all solid, it is resistant to external shock, wide use temperature range, and has a simple and inexpensive manufacturing method.

Referring to FIG. 1, a scan line 103, a data line 104, and a common power supply line 105 are formed in the light emitting unit 102 of the substrate 101, and the scan line 103 and the data line are formed. The 104 and common power line 105 are connected to the scan driver 106, the data driver 107, the cathode bus line 108 and the common power bus line 109, respectively. In this case, at each end of the cathode bus line 108 and the common power bus line 109, a pad 110 for connecting to an external device is formed.

In this case, the unit pixel in the light emitting unit 102 is defined by the scan line 102, the data line 103, and the common power supply line 104. In this case, a thin film transistor 111 for switching or driving the unit pixel and a capacitor 112 for storing charge are formed in the unit pixel.

A light emitting diode 113 and a second electrode formed of a first electrode, an organic film layer including at least an organic light emitting layer are formed in the unit pixel, and the second electrode is formed over the entire surface of the light emitting part 102. And a connection 114 with the cathode bus line 108.

In this case, one end of each of the scan line 102, the data line 103, and the common power line 104 is connected to the scan drive 106, the data drive 107, and the common power bus line 109. However, the other end is broken independently (A).

Accordingly, the conventional organic electroluminescent display device has a disadvantage in that there is no component that removes static electricity generated in the light emitting unit, and thus, a defect of the device due to the static electricity cannot be prevented.

Accordingly, the present invention is to solve the above-mentioned disadvantages and problems of the prior art, connecting the anti-static diode to the end of any one or more of the scan line, data line and common power line, respectively, and cathode the diode An object of the present invention is to provide an organic light emitting display device connected to a bus line.

The object of the present invention is a substrate having a light emitting portion and a peripheral portion; And the light emitting unit includes a first pixel, at least an organic layer including an organic emission layer, and a second pixel including a second electrode, a scan line, a data line, and a common power line to supply a signal or power to the unit pixel. The peripheral portion includes a common power bus line and a cathode bus line, wherein a diode is connected to an end of at least one of the scan line, the data line, and the common power line, and the diode is connected to the cathode bus line. An organic electroluminescent display device and its manufacturing method are achieved.

In addition, the object of the present invention comprises the steps of preparing a substrate in which the light emitting portion and the peripheral portion defined; Forming a semiconductor layer in a predetermined region of the light emitting unit; Performing a process of implanting impurities into the semiconductor layer to form a plurality of diodes; Forming a scan line in which one end is connected to the scan drive, the other end is connected to the diode, and the diode and the cathode bus line are connected to the light emitting part of the substrate, and the predetermined part of the light emitting part Proceeding to form an additional data line and an additional common power line, one end of each of which is connected to the diode and the other end of which is connected to the cathode bus line; One end is connected to the data drive on the light emitting part of the substrate, the other end is to form a data line connected to the diode and one end is connected to the common power bus line, the other side The end of the process of forming a common power line to be connected to the diode; And forming a first electrode, an organic film layer including at least an organic light emitting layer, and a second electrode on the light emitting portion of the substrate, and a method of manufacturing the same.

Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

Referring to FIG. 2, metal wirings such as a scan line 203, a data line 204, a common power line 205, and the like are formed on a light emitting portion 202 of a substrate 201 such as glass or plastic. The unit pixel is defined by the metal wiring. In the unit pixel, a switching or driving thin film transistor 206 and a capacitor 207 for storing an electrostatic charge are formed. In addition, a light emitting diode 208 and a second electrode 209 formed of a first electrode, an organic layer including at least an organic light emitting layer, are formed.

A peripheral portion of the substrate 201 may include a common power bus line 210 connected to the common power line 205, a scan drive 211 connected to the scan line 203, and a data line 204. The connected data drive 212 and the cathode bus line 213 connected to the second electrode of each pixel are formed. In this case, pads 214 are formed at ends of the common power bus line 210 and the cathode bus line 213 to be connected to an external device.

In this case, an antistatic diode 215 is formed at an end of at least one of the scan line 203, the data line 204, and the common power line 205, so that the static electricity generated in the light emitting part or the peripheral part affects the devices. Do not give As shown in the figure, the diode 215 forms the scan line 203, the data line 204, and the common power line 205 with an additional data line 216 or an additional common power line 217. It is connected to the cathode bus line 213.

At this time, the diode 215 is preferably a Zener diode. When the voltage applied to the device is low, almost no reverse current flows but suddenly flows above a certain voltage, which is caused by the tunnel effect and the avalanche. This phenomenon can continue to be used as a diode if it is used within a range (limit) where the pn junction is not destroyed by Joule heat or the like.

In addition, the diode 215 may be selectively formed. In general, the scan line 203 and the data line 204 which are susceptible to static electricity form the diode 215 and are formed on the common power line 205. This may not be because the common power line 205 is applied or maintained with a constant voltage or current, so the possibility of generating static electricity is low.

3A to 3D are plan views illustrating a manufacturing process of an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, when the semiconductor layer of the thin film transistor 206 is formed on a substrate 201 such as glass or plastic, the semiconductor layer 215a of the antistatic diode 215 is formed. In this case, the diode 215 is simulated as if it is formed inside the light emitting unit 202, but is actually formed at the edge or the outer surface of the light emitting unit 202, which is the area of the light emitting unit 202 is reduced To prevent that.

In this case, the dotted lines illustrated in FIG. 3A indicate other elements to be formed in the future, and as described with reference to FIG. 2, the light emitter 202, the common power bus line 210, the scan drive 211, and the data drive. 212, the cathode bus line 213 and the pad 214 connected to the ends of the common power bus line 210 and the cathode bus line 213 are shown.

Subsequently, an impurity implantation process is performed on the semiconductor layer 215a to form a diode 215 having a PN junction.

Subsequently, although not shown in the drawing, after the diode 215 is formed, a process of forming a gate insulating film of the thin film transistor may be performed.

Referring to FIG. 3B, when the gate electrode of the thin film transistor 206 is formed on the substrate 201, one end is connected to the scan drive 211 using the gate electrode material, and the other end thereof. The scan line 203 is connected to the formed diode 215. In this case, the additional scan line 203 connecting the cathode bus line 210 to the diode 215 may be simultaneously formed as part of the cathode bus line 210 when the cathode bus line 210 is formed. In some cases, it is not necessary that the diode 215 itself can be formed at a position where it can be directly contacted with the cathode bus line 210.

When forming the scan line 203, the gate electrode material is patterned to form an additional data line 216 and an additional common power line 217. In this case, the additional data line 216 and the additional common power line 217 serve to extend the data line 204 and the common power line 205 to be formed later, and the data line 204 and the common power line 205. And the diode 215 formed at the end of the same contact with the cathode bus line 213 at the same time.

Subsequently, although not shown in the figure, a process of forming an interlayer insulating film of the thin film transistor 206 may be performed.

Referring to FIG. 3C, when forming the source / drain electrodes of the thin film transistor 206 on the substrate 201, the data line 204 and the common power line are patterned by patterning source / drain electrode materials formed over the entire surface of the substrate. 205 is formed.

In this case, one end of the data line 204 is connected to the data drive 212, the other end is connected to the formed diode 215, and one end of the common power line 205 is It is connected to the power source common bus line 210, and the other end is formed to be connected to the formed diode 215.

Accordingly, the scan line 204, the data line 204, and the common power line 205 have an antistatic diode 215 formed at an end of the line, and the diode 215 is a cathode bus line 213. It is formed to be connected to the, so that the diode 215 to solve the static electricity generated in the device so that the device is not damaged by the static electricity.

Referring to FIG. 3D, a passivation layer, a planarization layer, a first electrode, a pixel defining layer, an organic layer including at least an organic emission layer, and a second electrode 209 are formed on the substrate 201 to form the scan line 204. An antistatic diode 215 is formed at the ends of the data line 204 and the common power line 205, and the diode 215 completes the organic light emitting display device connected to the cathode bus line 213.

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Accordingly, the organic light emitting display device and a method of manufacturing the same of the present invention solve the problem caused by static electricity in the light emitting unit by connecting an antistatic diode to each end of at least one of the scan line, the data line and the common power line. It can be effective.

Claims (14)

A substrate having a light emitting portion and a peripheral portion; And The light emitting unit includes a unit pixel including a first electrode, an organic layer including an organic light emitting layer, and a second electrode, and a scan line, a data line, and a common power line for supplying a signal or power to the unit pixel. Includes common power bus lines and cathode bus lines, And a diode is connected to an end of at least one of the scan line, the data line, and the common power line, and the diode is connected to the cathode bus line. The method of claim 1, One or more thin film transistors and capacitors are further included in the unit pixel. The method of claim 1, And the diode is a zener diode. The method of claim 1, And the diode is an antistatic diode. The method of claim 1, And the diode is positioned at an edge or an outer surface of the light emitting unit. The method of claim 1, And the scan line is connected to a scan drive. The method of claim 1, And the data line is connected to a data drive. The method of claim 1, And the common power line is connected to the common power bus line. The method of claim 1, And the data line is connected to a cathode bus line by the diode and the additional data line. The method of claim 1, And wherein the common power line is connected to a cathode bus line by the diode and an additional common power line. The method of claim 1, And the scan line is connected to a cathode bus line by the diode and the additional scan line or by the diode and direct contact. Preparing a substrate having a light emitting portion and a peripheral portion defined therein; Forming a semiconductor layer in a predetermined region of the light emitting unit; Performing a process of implanting impurities into the semiconductor layer to form a plurality of diodes; Forming a scan line in which one end is connected to the scan drive, the other end is connected to the diode, and the diode and the cathode bus line are connected to the light emitting part of the substrate, and the predetermined part of the light emitting part Proceeding to form an additional data line and an additional common power line, one end of each of which is connected to the diode and the other end of which is connected to the cathode bus line; One end is connected to the data drive on the light emitting part of the substrate, the other end is to form a data line connected to the diode and one end is connected to the common power bus line, the other side The end of the process of forming a common power line to be connected to the diode; And Forming a first electrode, an organic layer including an organic light emitting layer, and a second electrode on the light emitting part of the substrate; Organic light emitting display device manufacturing method comprising a. The method of claim 12, And forming the semiconductor layer at the same time as the semiconductor layer of the thin film transistor. The method of claim 12, And forming the scan line, the additional data line, and the additional common power line at the same time as forming the gate electrode of the thin film transistor.

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