KR100683713B1 - Organic thin film transistor and flat panel display device having same - Google Patents

Abstract

The present invention, a substrate; A source / drain electrode formed on one surface of the substrate; An organic semiconductor layer in contact with the source / drain electrode; A gate electrode insulated from the organic semiconductor layer, wherein the source / drain electrodes are in electrical communication with an external electrical element,

Provided are an organic thin film transistor and a flat panel display device having the same, wherein electrical communication between the source / drain electrodes and the external electric element is performed through an auxiliary conductive layer.

Description

A thin film transistor and a flat panel display device having the same

1 is a schematic cross-sectional view of an organic thin film transistor according to the related art and a pixel of a flat panel display device having the same;

2A is a schematic perspective view of an organic electroluminescent display device according to an embodiment of the present invention;

FIG. 2B is a schematic circuit diagram of one pixel indicated by "A" in FIG. 2A;

FIG. 2C is a schematic cross sectional view of the one pixel indicated by symbol “A” of FIG. 2A; FIG.

<Brief description of symbols for the main parts of the drawings>

110 ... substrate 220a, b ... source / drain electrodes

230 ... gate insulating layer 240 ... gate electrode

250 organic semiconductor layer 251 auxiliary conductive layer

260 ... Protective Layer 261 Via Hole

300 ... organic electroluminescent device 310 ... first electrode layer

320 pixel defining layer 330 organic electroluminescent unit

340 ... second electrode layer

The present invention relates to a thin film transistor and a flat panel display device having the same, and more particularly, to a thin film transistor having a structure that facilitates electrical communication between the source / drain electrodes and the external electrical element, and a flat display device having the same. .

Thin film transistors used in flat panel display devices such as liquid crystal display devices, organic electroluminescent display devices, or inorganic electroluminescent display devices (hereinafter referred to as TFTs) are used to drive switching elements and pixels that control the operation of each pixel. Used as a drive element.

Such a conventional TFT has a semiconductor layer having a source / drain region doped with a high concentration of impurities, a channel region formed between the source / drain regions, and a region insulated from the semiconductor layer and corresponding to the channel region. The gate electrode is positioned, and the source / drain electrodes are in contact with the source / drain regions, respectively.

On the other hand, the demand for TFT is required not only in display devices but also in various fields. For example, recently, it is used in various fields such as smart cards, e-papers, roll-up displays, etc., which are required for thin electronic devices provided therein. Since the common feature is flexibility, the substrate forming the thin film transistor is required to be a substrate having flexibility such as a plastic substrate.

By the way, when forming the semiconductor layer of the inorganic material like the prior art, the high temperature process of 300 degreeC or more is accompanied, and the plastic board | substrate vulnerable to heat cannot be used.

Low temperature polysilicon manufacturing processes have been developed that meet the design specifications and enable low temperature processes, but have not yet met sufficient manufacturing requirements.

In order to solve this problem, organic semiconductors have recently emerged. The organic semiconductor can be formed in a low temperature process and has the advantage of realizing a low-cost thin film transistor.

1 illustrates an example of a schematic partial cross-sectional view of an example of a flat panel display device having an organic thin film transistor having a top gate structure according to an example of the prior art. The gate electrode 22 is formed on one surface of the substrate 11 having the buffer layer 21, and the gate insulating layer 23 for insulating the source / drain electrodes 24a and b formed thereon is formed on one surface of the substrate 11. Is formed. The source / drain electrodes 24a and b are in electrical communication with each other when an electrical signal is applied to the gate electrode 22 through the organic semiconductor layer 25 formed thereon to form a channel in the organic semiconductor layer 25. do. The organic thin film transistor unit 20 is insulated and planarized through the insulating layer 26, and an upper portion thereof may include a pixel unit 30 that forms an image according to an electrical signal applied from the organic thin film transistor unit. .

In this case, the organic semiconductor layer 25 is provided on the uppermost layer of the organic thin film transistor unit 20 in the process of forming the organic thin film transistor unit 20, so that the organic semiconductor layer 25 may be damaged in a subsequent process. Is increased. Such damage to the organic semiconductor layer 25 changes the semiconductor properties, so that, due to characteristic changes other than those considered in the design, the device having the same may exhibit unwanted operating characteristics.

Meanwhile, in the case of a bottom contact organic thin film transistor having a structure in which a source / drain electrode or the like is first formed on one surface of a substrate so that the organic semiconductor layer is disposed below, a via hole for contact between the pixel portion and the drain electrode of the organic thin film transistor portion is formed. In the process, the organic thin film transistor according to the prior art has a structural problem, such as poor contact between the electrode and the drain electrode of the pixel portion due to a large step between the electrode and the drain electrode of the pixel portion.

This structural problem, in the case of a device having an organic thin film transistor according to the prior art, particularly a flat panel display device, accompanied by problems such as deterioration of the screen quality by forming a bad pixel in the display area.

Disclosure of Invention An object of the present invention is to solve the above problems and to provide an organic thin film transistor having a structure capable of smooth communication with a source / drain electrode and a flat panel display device having the same.

In order to achieve the above object, according to one aspect of the invention,

Board;

A source / drain electrode formed on one surface of the substrate;

An organic semiconductor layer in contact with the source / drain electrode;

A gate electrode insulated from the organic semiconductor layer;

The source / drain electrodes are in electrical communication with an external electrical element,

Electrical communication between the source / drain electrodes and the external electrical element is provided through an auxiliary conductive layer.

According to the organic thin film transistor of the present invention, the auxiliary conductive layer may be the same layer as the gate electrode.

According to the organic thin film transistor of the present invention, the source / drain electrode may include at least one of aluminum (Al), molybdenum (Mo), molybdenum-tungsten (MoW).

According to the organic thin film transistor of the present invention, the gate insulating layer interposed between the organic semiconductor layer and the gate electrode, SiO2, SiNx, Al2O3, Ta2O5, BST, PZT, polymethylmethacrylate (PMMA), polystyrene (PS), Phenolic polymer, acrylic polymer, imide polymer such as polyimide, arylether polymer, amide polymer, fluorine polymer, p-xylene polymer, vinyl alcohol polymer, parylene, and their It may be provided with one or more layers comprising one or more materials of the compound comprising one or more.

According to the organic thin film transistor of the present invention, the organic semiconductor layer is, pentacene (tetracene), tetracene (tetracene), atracene (anthracene), naphthalene (alpha) -6- thiophene, perylene (perylene) ) And its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dihydride ( perylene tetracarboxylic dianhydride) and derivatives thereof, polythiophene and derivatives thereof, polyparaphenylenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polyfluorene and derivatives thereof, copolymers of polyfluorene-oligothiophene And derivatives thereof, polythiophenevinylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligoacenes of naphthalene and derivatives thereof, oligothiophenes of alpha-5-thiophene, and Derivatives of these, phthalocyanine and derivatives thereof with or without metals, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives and per At least one of relenetetracarboxylic diimide and derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof.

According to another aspect of the present invention,

Board; A source / drain electrode formed on one surface of the substrate; An organic semiconductor layer in contact with the source / drain electrode; An organic semiconductor layer comprising a gate electrode insulated from the organic semiconductor layer;

A pixel portion in electrical communication with the organic semiconductor layer, the pixel portion including one or more pixels;

The pixel portion includes one or more electrode layers in electrical communication with the source / drain electrodes,

An electrical communication between the electrode layer and the source / drain electrodes is provided through an auxiliary conductive layer.

According to the flat panel display of the present invention, the auxiliary conductive layer may be the same layer as the gate electrode.

According to the flat panel display device of the present invention, the source / drain electrodes may include at least one of aluminum (Al), molybdenum (Mo), and molybdenum-tungsten (MoW).

According to the flat panel display device of the present invention, the gate insulating layer interposed between the organic semiconductor layer and the gate electrode, SiO2, SiNx, Al2O3, Ta2O5, BST, PZT, polymethylmethacrylate (PMMA), polystyrene (PS), Phenolic polymer, acrylic polymer, imide polymer such as polyimide, arylether polymer, amide polymer, fluorine polymer, p-xylene polymer, vinyl alcohol polymer, parylene, and their It may be provided with one or more layers comprising one or more materials of the compound comprising one or more.

According to the flat panel display device of the present invention, the organic semiconductor layer may include a pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, and perylene. ) And its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dihydride (perylene tetracarboxylic dianhydride) and its derivatives, polythiophene and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, air of polyfluorene-oligothiophene Copolymers and derivatives thereof, polythiophenevinylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes of alpha-5-thiophene and Derivatives of these, phthalocyanine and derivatives thereof with or without metals, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives and per At least one of relenetetracarboxylic diimide and derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof.

According to the flat panel display device of the present invention, the pixel portion may include a first electrode layer, a second electrode layer, and an organic electroluminescent portion interposed between the electrode layers.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A is a schematic perspective view of an organic electroluminescent display device according to an embodiment of the present invention. The display area 200 including one or more pixels is formed on one surface of the substrate 110, and the pad part 600 including one or more terminals is disposed on at least one side of the display area 200. The substrate 110 and the sealing substrate 400 seal at least the display area 200 through the sealing material 301 between the display area 200 and the pad part 600. The sealing space formed by the substrate 110 and the sealing substrate 400 through the sealing material 301 is provided with a moisture absorbing layer (not shown), which is deteriorated due to moisture or the like in which the display area 200 penetrates into the sealing space. Can be reduced or prevented. Although FIG. 2A illustrates a sealing substrate 400 as a member for sealing the display area 200, the present invention is not limited thereto. That is, a sealing layer composed of one or more layers may be provided as a member for sealing the display area 200.

The moisture absorbing layer (not shown) is a transparent moisture absorbing layer and may include alkaline earth peroxides such as barium, activated alumina, potassium oxide or barium oxide. The moisture absorbing layer (not shown) may be formed by a coating method such as screen printing or spray coating, or may be formed through a method such as a vapor deposition method. In some cases, after the moisture absorption layer is formed, it may be subjected to a curing process by energy irradiation such as UV irradiation and heat irradiation.

In addition, a scan driver / data for transmitting a scan signal and / or a data signal to an electric element for providing an electrical signal to the organic electroluminescent display area 200 according to the present invention, for example, a pixel constituting the display area 200. Vertical / horizontal drive circuitry, such as a driver, may be disposed in the sealing area between the display area 200 and the sealing part, or may be disposed outside the sealing area, such as the horizontal driving circuit part 500 shown in FIG. 2A. The vertical / horizontal drive circuitry may take a variety of configurations, such as in the form of COG or may be comprised of external electrical elements via FPC or the like.

On the other hand, FIG. 2B shows a schematic circuit diagram of one pixel indicated by the symbol “A” of FIG. 2A. Here, one pixel is illustrated as having two organic thin film transistors OTFT1 and OTFT2 and one capacitor C, which is not limited thereto.

When an electrical signal is applied from the scan line, the electrical signal is transmitted to the gate electrode of the first organic thin film transistor OTFT1, and according to the on / off operation of the gate electrode, the electrical signal is transmitted from the data line to the first organic thin film transistor ( It is delivered via the source / drain electrodes of OTFT1). The signal transmitted through the drain electrode of the first organic thin film transistor OTFT1 is transferred to the capacitor and the gate electrode of the second organic thin film transistor OTFT2, and the driving line Vdd line through the second organic thin film transistor OTFT2. Electrical signals from the substrate to the organic electroluminescent device (OLED).

FIG. 2C is a schematic partial cross-sectional view of the second organic thin film transistor OTFT2 and the organic EL device OLED of FIG. 2B. The substrate 110 may be a glass material, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), polyether imide ), Polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propinonate (CAP) Plastic ash), and the like.

The source / drain electrodes 220a and b may be formed of various conductive materials. However, the source / drain electrodes 220a and b may be formed of metal layers such as aluminum, molybdenum, molybdenum-tungsten, etc. in consideration of adhesion to the lower substrate 110. In some cases, the buffer layer 111 may be further provided to prevent damage to the lower substrate 110 that may occur in the process of forming the source / drain electrodes 220a and b.

After the source / drain electrodes 220a and b are formed, the organic semiconductor layer 230 is entirely formed on one surface of the source / drain electrodes 220a and b. The organic semiconductor layer 230 may include pentacene, tetratracene, atracene, naphthalene, alpha-6-thiophene, perylene and derivatives thereof, and rubrene ( rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, Polythiophene and derivatives thereof, polyparaphenylenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polyfluorene and derivatives thereof, copolymers of polyfluorene-oligothiophene and derivatives thereof, polythiophenevinyl Enes and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, with or without metals Talocyanine and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof and perylenetetracarboxylic diimides And derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic acid dianhydride and derivatives thereof.

After the organic semiconductor layer 230 is formed, a gate insulating layer 240 for insulating the gate electrode 250 to be formed later is formed on one surface thereof. The gate insulating layer 240 may be composed of, for example, an inorganic insulating layer such as SiO 2, SiN x, Al 2 O 3, Ta 2 O 5, BST, or PZT by chemical vapor deposition or sputtering, and may be a polymethylmethacrylate (PMMA) as a general general polymer. , PS (polystyrene), phenolic polymer, acrylic polymer, imide polymer such as polyimide, arylether polymer, amide polymer, fluorine polymer, p-xylene polymer, vinyl alcohol polymer, parylene ( parylene), and an organic insulating layer made of a polymer material such as a compound containing one or more thereof, and in some cases, may be formed of a plurality of layers. It is preferred that the material be selected from a material which is excellent in the same or similar thermal expansion coefficient as the substrate.

After the gate insulating layer 240 is formed, the gate electrode 250 is formed thereon. The gate electrode 250 may be a conductive metal such as MoW, Al, Cr, Al / Cr, conductive polyaniline, conductive poly pirrole, conductive polythiopjene, polyethylene deoxythiophene, or polyethylene. Various conductive polymers such as dioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS) may be used, such as adhesion to the substrate 110, flatness of the thin films formed on the gate electrode 250, processability for patterning, and subsequent processing. Appropriate materials should be selected in consideration of resistance to the chemicals used.

After formation of the gate electrode 250, a protective layer 260, such as a passivation layer and / or a planarization layer for insulating and / or planarizing the organic thin film transistor or the organic thin film transistor unit 201, is formed thereon. . The pixel part 300 is provided on one surface of the protective layer 260. As an example of an electric element as an embodiment of the present invention illustrated in FIG. 2C, that is, a pixel unit included in the flat panel display device, an organic electroluminescent element is provided. The pixel portion 300 as an organic electroluminescent element is composed of a first electrode layer 310, a second electrode layer 340, and an organic electroluminescent portion 330 interposed between these electrode layers.

The first electrode layer 310 is formed on one surface of the protective layer 260 as the insulating layer, and the first electrode layer 310 is formed of the organic thin film transistor unit 201 through the via hole 261 formed in the protective layer 260. Electrical communication is achieved.

The first electrode layer 310 can be configured in various ways. For example, when the first electrode layer 310 operates as an anode and is a bottom emission type, the first electrode layer 310 is transparent such as ITO, IZO, ZnO, or In 2 O 3. A transparent electrode made of a conductive material may be used, and in the case of a top emission type, a reflective electrode including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compound thereof, and a transparent electrode formed thereon It may be composed of an electrode, the first electrode layer 310 is not limited to a single layer, a double layer, and various modifications, such as may be composed of multiple layers are possible.

After the first electrode layer 310 is formed, a pixel defining layer 320 for defining a pixel opening is formed on the top. After the pixel defining layer 320 is formed, the organic light emitting unit 330 is provided in at least a region including the pixel opening. As the organic electroluminescent unit 330, a low molecular or polymer organic film may be used. When the low molecular organic film is used, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) are emitted. ), An electron transport layer (ETL), an electron injection layer (EIL), or the like, may be formed by stacking a single or a complex structure, and the usable organic material may be copper phthalocyanine (CuPc). , N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Various applications are possible, including tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic films are formed by the vacuum deposition method.

In the case of the polymer organic film, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing. The organic layers constituting the organic electroluminescent unit are not necessarily limited thereto, and various embodiments may be applied.

Similarly, in the case of the first electrode layer 310, the second electrode layer 340 may have various configurations depending on the polarity and the light emission type of the electrode layer. That is, when the second electrode layer 340 operates as a cathode electrode and the light emission type is a bottom emission type, the second electrode layer 340 may be Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and these. It may be composed of one or more layers of a material having a small work function, such as a compound of, or in the case of a top emission type, organic electroluminescence with Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and compounds After forming an electrode for matching a work function on one surface of the unit 330, a transparent electrode such as ITO, IZO, ZnO, In 2 O 3, or the like may be formed thereon, and the second electrode layer 340 may be formed on the entire surface. However, the present invention is not limited thereto, and may have various configurations. Meanwhile, in the above embodiment, the first electrode layer 310 serves as an anode electrode and the second electrode layer 340 serves as a cathode electrode, but various configurations are possible, such as having opposite polarities. Do.

Although not shown in the drawings, the display area including the thin film transistor and the subpixels formed on the substrate 110 is sealed by a sealing member. That is, the sealing substrate may be interposed on the second electrode layer 340 to seal the display area including at least subpixels, and the sealing layer in the form of a thin film having one or more layers on one surface of the second electrode layer may be formed. The sealing structure, such as may be formed, is not limited to any particular form.

Meanwhile, according to the present invention, electrical communication between the organic thin film transistor unit and the external electric element is made through the auxiliary conductive layer. That is, as illustrated in FIG. 2C, electrical communication between the source / drain electrodes 220a and b of the organic thin film transistor unit 201 and the first electrode layer 310 of the pixel unit 300 is performed by the auxiliary conductive layer 251. It is through.

The auxiliary conductive layer 251 may be formed at the same time as the formation of the gate electrode 250. First, source / drain electrodes 220a and b are formed on one surface of the substrate 110, and then an organic semiconductor layer ( When forming the 230 and the gate insulating layer 240, a contact hole 252 is formed in each layer. Thereafter, an auxiliary conductive layer 251 is formed in direct contact with the drain electrode 220b through the contact hole 252.

The auxiliary conductive layer 251 may be formed of the same layer as the gate electrode 250 or may be formed of a separate conductive layer. When the auxiliary conductive layer 251 is formed of the same layer as the gate electrode 250, the auxiliary conductive layer 251, like the gate electrode 250, may be a conductive metal such as MoW, Al, Cr, Al / Cr, or the like. It may be composed of various conductive polymers such as conductive polyaniline, conductive poly pirrole, conductive polythiopjene, polyethylene dioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS).

The above embodiments are examples for describing the present invention, and the present invention is not limited thereto. The thin film transistor according to the present invention may be applied to a liquid crystal display device as well as an organic electroluminescent display device, and an image may be displayed in addition to a flat panel display device. Various modifications may be considered, such as mounting to a driver circuit not implemented.

According to the present invention as described above, the following effects can be provided.

First, the thin film transistor according to the present invention is an organic thin film transistor having a top gate structure, which prevents damage to the organic semiconductor layer during the process and assists between the drain electrode and an external electrical element such as an electrode layer of the pixel portion of the flat panel display device. By passing through the conductive layer, it is possible to provide an organic thin film transistor having a structure in which contact failure between an external electric element and an organic thin film transistor can be eliminated and an operation failure can be prevented.

Second, the auxiliary conductive layer of the organic thin film transistor according to the present invention may be formed at the same time as the formation of the gate electrode, thereby providing an organic thin film transistor having a structure that can be simply arranged without having a separate layer forming step.

Third, by providing an organic thin film transistor having a structure as described above, it is possible to provide a flat panel display device having excellent screen quality by preventing generation of defective pixels due to an increase in contact resistance and poor contact.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (11)

Board; A source / drain electrode formed on one surface of the substrate; An organic semiconductor layer in contact with the source / drain electrode; A gate electrode insulated from the organic semiconductor layer; The source / drain electrodes are in electrical communication with an external electrical element, Electrical communication between the source / drain electrodes and the external electrical element is via an auxiliary conductive layer, And the auxiliary conductive layer is the same layer as the gate electrode. delete The method of claim 1, And the source / drain electrode comprises at least one of aluminum (Al), molybdenum (Mo), and molybdenum-tungsten (MoW). The method of claim 1, The gate insulating layer interposed between the organic semiconductor layer and the gate electrode may include SiO 2, SiN x, Al 2 O 3, Ta 2 O 5, BST, PZT, PMMA (poly methylmethacrylate), PS (polystyrene), phenolic polymer, acrylic polymer, polyimide ( one or more materials of an imide polymer such as polyimide, an arylether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, parylene, and a compound including one or more thereof Organic thin film transistor comprising one or more layers comprising a. The method of claim 1, The organic semiconductor layer may include pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, perylene and derivatives thereof, rubrene And derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polyti Offen and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, copolymers and derivatives of polyfluorene-oligothiophene, polythiophenevinylene and Derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligoacenes of naphthalene and derivatives thereof, oligothiophenes of alpha-5-thiophene and derivatives thereof, with or without metals Talocyanine and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof, and perylenetetracarboxylic diimides and An organic thin film transistor comprising at least one of derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic acid dianhydride and derivatives thereof. Board; A source / drain electrode formed on one surface of the substrate; An organic semiconductor layer in contact with the source / drain electrode; An organic thin film transistor including a gate electrode insulated from the organic semiconductor layer; A pixel portion in electrical communication with the organic thin film transistor, the pixel portion including one or more pixels; The pixel portion includes one or more electrode layers in electrical communication with the source / drain electrodes, Electrical communication between the electrode layer and the source / drain electrodes is via an auxiliary conductive layer, The auxiliary conductive layer is a flat panel display device, characterized in that the same layer as the gate electrode. delete The method of claim 6, And the source / drain electrodes include at least one of aluminum (Al), molybdenum (Mo), and molybdenum-tungsten (MoW). The method of claim 6, The gate insulating layer interposed between the organic semiconductor layer and the gate electrode may include SiO 2, SiN x, Al 2 O 3, Ta 2 O 5, BST, PZT, PMMA (poly methylmethacrylate), PS (polystyrene), phenolic polymer, acrylic polymer, polyimide ( one or more materials of an imide polymer such as polyimide, an arylether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, parylene, and a compound including one or more thereof Flat panel display device comprising one or more layers comprising a. The method of claim 6, The organic semiconductor layer may include pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, perylene and derivatives thereof, rubrene And derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polyti Offen and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, copolymers and derivatives of polyfluorene-oligothiophene, polythiophenevinylene and Derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligoacenes of naphthalene and derivatives thereof, oligothiophenes of alpha-5-thiophene and derivatives thereof, with or without metals Talocyanine and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof and perylenetetracarboxylic diimides And derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic acid dianhydride and derivatives thereof. The method of claim 6, And the pixel portion includes a first electrode layer, a second electrode layer, and an organic electroluminescent portion interposed between the electrode layers.

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