KR100682198B1 - Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a semiconductor device, wherein a barrier layer is formed inside a semiconductor substrate under a gate edge to prevent dopants in a source / drain region from diffusing to a lower end of a gate, thereby shortening an effective gate length and providing a drain hole. This technology prevents an increase in the pip layer to prevent punch through, and leaves a portion of the silicon layer between the barrier layer and the gate oxide layer so as not to interfere with channel formation during transistor operation.

Description

Method for manufacturing a semiconductor device {METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE}

1 is a cross-sectional view showing a method for manufacturing a semiconductor device according to the prior art.

2A to 2H are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a semiconductor device, wherein a barrier layer is formed inside a semiconductor substrate under a gate edge to prevent dopants in a source / drain region from diffusing to a lower end of a gate, thereby shortening an effective gate length and providing a drain hole. This technology prevents an increase in the pip layer to prevent punch through, and leaves a portion of the silicon layer between the barrier layer and the gate oxide layer so as not to interfere with channel formation during transistor operation.

1 is a cross-sectional view showing a method of manufacturing a semiconductor device according to the prior art.

Referring to FIG. 1, a gate oxide layer 30 is formed on a semiconductor substrate 10 provided with an isolation layer 20, and a polysilicon layer 40 and a tungsten silicide layer 50 are formed on the gate oxide layer 30. And a stacked structure of the gate hard mask layer 60.
Next, after forming the gate pattern by patterning the stacked structure, spacers are formed on the sidewalls of the gate pattern to form a gate.

In the above-described method of manufacturing a semiconductor device according to the related art, as the gate length becomes shorter, a punch through and a short channel effect occur to deteriorate the refresh characteristics.

In order to solve the above problem, a barrier layer is formed inside the semiconductor substrate under the gate edge to prevent the dopants in the source / drain regions from diffusing to the bottom of the gate to shorten the effective gate length and to increase the drain depletion layer. An object of the present invention is to provide a method of manufacturing a semiconductor device which prevents punch through and prevents a punch-through phenomenon, and leaves a portion of a silicon layer between the barrier film and the gate oxide film so as not to interfere with channel formation during transistor operation.

Method for manufacturing a semiconductor device according to the present invention

Forming a protrusion in the gate predetermined region on the semiconductor substrate;

Forming a barrier film on the sidewalls of the protrusions;

Growing a silicon epitaxial layer on the semiconductor substrate and performing a planarization etching process;

Forming a gate over the semiconductor substrate

Characterized in that it comprises a,
Forming a photoresist pattern defining a gate predetermined region on the protrusion, and then etching the semiconductor substrates on both sides of the gate predetermined region using the photoresist pattern as a mask;
The protrusion is formed to a height of 300 to 500Å,
The barrier layer forming step
Forming an insulating film having a predetermined thickness over the entire semiconductor substrate including the protrusions;
Performing a dry etching process to form a barrier layer by leaving an insulating layer only on the sidewalls of the protrusions;
The barrier film is formed of an oxide-based insulating material or nitride film,
The silicon epi layer is formed to have a thickness of 5 to 15nm from the barrier layer.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention will be described in detail.

2A to 2H are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with the present invention.

Referring to FIG. 2A, a first photoresist layer pattern 110 defining a gate predetermined region is formed on the semiconductor substrate 100.

Here, the first photoresist layer pattern 110 may be formed to have a smaller width than the gate predetermined area.

Referring to FIG. 2B, the semiconductor substrate 100 is etched by a predetermined depth using the first photoresist pattern 110 as a mask to form a protrusion on the gate predetermined region.

The protrusion is preferably formed to a height of 300 to 500Å.

Referring to FIG. 2C, an insulating film 120 is formed on the entire surface of the semiconductor substrate 100 including the protrusion.

Here, the insulating film 120 is preferably formed of an oxide-based insulating material or a nitride film.

Referring to FIG. 2D, the barrier layer 125 is formed by leaving the insulating layer 120 only on the sidewalls of the protrusions by performing an entire surface etching process.
Here, it is preferable to perform a front etching process by dry etching.

Referring to FIG. 2E, a silicon epitaxial layer 130 is grown on the exposed semiconductor substrate 100.

Here, the silicon epitaxial layer 130 may be grown by a thickness of 5 to 15 nm from the top of the barrier layer 125.

In this case, the silicon layer 130 formed on the barrier layer 125 becomes a channel region during the operation of the MOS transistor.

Referring to FIG. 2F, after the planarization etching process is performed, a gate oxide layer 140 is formed on the semiconductor substrate 100.

Referring to FIG. 2G, a polysilicon layer 150, a gate metal layer 160, and a gate hard mask layer 170 may be stacked on the semiconductor substrate 100, and then the stacked structure may be patterned to form a gate pattern. do.
Here, the gate metal layer 160 is formed of a tungsten silicide layer, and the gate hard mask layer 170 is preferably formed of a nitride film.

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Referring to FIG. 2H, a spacer 180 is formed on the sidewall of the gate pattern to form a gate, and an ion implantation process is performed to form the source / drain region 190.

Here, the barrier layer 125 may be formed under the gate edge to prevent the dopants in the source / drain regions from diffusing to the lower end of the gate to shorten the effective gate length.

In the method of manufacturing a semiconductor device according to the present invention, a barrier layer is formed inside a semiconductor substrate under a gate edge to prevent dopants in the source / drain regions from diffusing to the lower end of the gate to shorten an effective gate length, and a drain depletion layer. By preventing this increase, a punch through phenomenon is prevented, and a part of the silicon layer is left between the barrier film and the gate oxide film, thereby preventing the channel formation during the transistor operation.

In addition, a preferred embodiment of the present invention is for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Claims (6)

Forming a protrusion in a gate predetermined area on the semiconductor substrate; Forming a barrier layer on the sidewalls of the protrusions; Growing a silicon epitaxial layer on the semiconductor substrate and performing a planarization etching process; And Forming a gate over the semiconductor substrate Method of manufacturing a semiconductor device comprising a. The method of claim 1, And forming a photoresist pattern defining a gate predetermined region on the protrusion, and then etching the semiconductor substrates on both sides of the gate predetermined region using the photoresist pattern as a mask. The method of claim 1, The projecting portion is a manufacturing method of a semiconductor device, characterized in that formed in a height of 300 to 500Å. The method of claim 1, The barrier layer forming step Forming an insulating film having a predetermined thickness over the entire semiconductor substrate including the protrusions; And Performing a dry etching process to form an insulating layer on only the sidewall of the protrusion to form the barrier layer Method of manufacturing a semiconductor device further comprising. The method of claim 1, The barrier film is a semiconductor device manufacturing method characterized in that formed of an oxide-based insulating material or a nitride film. The method of claim 1, The silicon epitaxial layer is a semiconductor device manufacturing method, characterized in that formed from a thickness of 5 to 15nm from the barrier film.

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