KR100680402B1 - Liquid composition for emulsion lithography and lithography method using same - Google Patents
Liquid composition for emulsion lithography and lithography method using same Download PDFInfo
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- KR100680402B1 KR100680402B1 KR1020040036609A KR20040036609A KR100680402B1 KR 100680402 B1 KR100680402 B1 KR 100680402B1 KR 1020040036609 A KR1020040036609 A KR 1020040036609A KR 20040036609 A KR20040036609 A KR 20040036609A KR 100680402 B1 KR100680402 B1 KR 100680402B1
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- 239000000839 emulsion Substances 0.000 title claims abstract description 81
- 238000001459 lithography Methods 0.000 title claims abstract description 75
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 239000007788 liquid Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004094 surface-active agent Substances 0.000 claims abstract description 14
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 3
- -1 polyoxyethylene lauryl ether Polymers 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229920001214 Polysorbate 60 Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 claims description 3
- KMMMWIFBVVBJOD-UHFFFAOYSA-N 6-methylheptoxycyclohexane Chemical compound CC(C)CCCCCOC1CCCCC1 KMMMWIFBVVBJOD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004147 Sorbitan trioleate Substances 0.000 claims description 3
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 claims description 3
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims description 3
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 claims description 3
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 claims description 3
- 229920000053 polysorbate 80 Polymers 0.000 claims description 3
- 235000019337 sorbitan trioleate Nutrition 0.000 claims description 3
- 229960000391 sorbitan trioleate Drugs 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000001587 sorbitan monostearate Substances 0.000 claims 1
- 235000011076 sorbitan monostearate Nutrition 0.000 claims 1
- 229940035048 sorbitan monostearate Drugs 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 description 10
- 229920000136 polysorbate Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 2
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 2
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Colloid Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 이멀젼 리소그래피용 액체 조성물 및 이를 이용한 리소그래피 방법에 관한 것으로, 물을 주성분으로 하고, 첨가제로서 비이온성 계면활성제인 하기 화학식 1로 표시되는 화합물을 포함하는 이멀젼 리소그래피용 액체조성물을 사용하여 리소그래피 공정을 수행함으로써, 계면활성제에 의해 액체 조성물의 표면 장력이 감소되기 때문에 웨이퍼의 미세 토폴로지 위에서 액체 조성물이 완전히 채워지지 않거나 부분적으로 집중되는 문제점이 해결되고, 감광막과 액체 조성물의 사이에 존재하는 마이크로 버블이 제거된다.The present invention relates to a liquid composition for emulsion lithography and a lithography method using the same, using a liquid composition for emulsion lithography comprising a compound represented by the following general formula (1), which contains water as a main component and is a nonionic surfactant as an additive. By performing the lithography process, the problem of the liquid composition not being completely filled or partially concentrated over the fine topology of the wafer because the surface tension of the liquid composition is reduced by the surfactant is solved, and the micro existing between the photoresist film and the liquid composition is solved. Bubbles are removed.
[화학식 1][Formula 1]
상기 식에서,Where
R은 탄소수 1 내지 40의 탄화수소기이고,R is a hydrocarbon group of 1 to 40 carbon atoms,
n은 10 내지 10000 중에서 선택되는 정수이다.n is an integer selected from 10-10000.
Description
도 1은 이멀젼 노광장치의 장점을 나타낸 그래프.1 is a graph showing the advantages of the emulsion exposure apparatus.
도 2는 종래기술에 따른 이멀젼 리소그래피 공정에 따른 문제점의 일예를 도시하는 단면도.2 is a cross-sectional view showing one example of a problem with an emulsion lithography process according to the prior art.
도 3a는 본 발명에 따른 배쓰형 이멀젼 리소그래피 장치를 도시하는 단면도.3A is a cross-sectional view illustrating a bath type emulsion lithographic apparatus according to the present invention.
도 3b는 본 발명에 따른 샤워형 이멀젼 리소그래피 장치를 도시하는 단면도.3B is a cross-sectional view of a shower type emulsion lithographic apparatus according to the present invention.
도 3c는 본 발명에 따른 잠수형 이멀젼 리소그래피 장치를 도시하는 단면도.3C is a cross-sectional view of a submerged emulsion lithographic apparatus according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 웨이퍼 20 : 이멀젼 리소그래피용 액체 조성물10
30 : 이멀젼 렌즈부 40 : 웨이퍼 스테이지30: emulsion lens portion 40: wafer stage
50 : 투영 렌즈부50: projection lens unit
본 발명은 이멀젼 리소그래피용 액체 조성물 및 이를 이용한 리소그래피 방법에 관한 것으로, 더욱 상세하게는 50㎚ 이하의 디바이스 개발을 위한 리소그래피 공정에 필수적으로 사용되는 이멀젼 리소그래피용 액체 조성물 및 이를 이용한 리소그래피 방법에 관한 것이다.The present invention relates to a liquid composition for emulsion lithography and a lithography method using the same, and more particularly, to a liquid composition for emulsion lithography and a lithography method using the same, which are essentially used in a lithography process for device development of 50 nm or less. will be.
현재까지 사용되어 온 리소그래피 공정은 건식 리소그래피(dry lithography)로서, 건식 리소그래피는 노광 렌즈와 웨이퍼의 사이가 공기로 채워지는 노광 시스템을 이용한다.The lithography process that has been used to date is dry lithography, which uses an exposure system in which an air is filled between the exposure lens and the wafer.
이러한 건식 리소그래피를 이용하는 경우, 50㎚급 디바이스 개발을 위한 새로운 노광 시스템이 광원으로서 F2 레이저 또는 EUV 레이저를 사용하여야 하는데, 그 결과 F2 레이저를 사용하는 경우에는 펠리클(pellicle)의 개발에 문제점이 있고, EUV 레이저를 사용하는 경우에는 마스크(mask) 및 광원 개발에 문제점이 있어 현실적으로 양산에 문제를 가지고 있다.When using such dry lithography, a new exposure system for 50 nm device development should use F 2 laser or EUV laser as the light source. As a result, when using F 2 laser, there is a problem in the development of pellicle. In the case of using an EUV laser, there is a problem in the development of a mask and a light source, which has a problem in mass production.
상기와 같은 문제점을 극복하기 위해 새롭게 개발되고 있는 리소그래피 공정이 이멀젼 리소그래피이다.Emulsion lithography is a new lithography process that is being developed to overcome the above problems.
이멀젼 리소그래피(immersion lithography)는 최종 투영 렌즈와 웨이퍼 사이에 임의의 액체를 채우고 그 액체의 굴절률만큼 광학계의 개구수(Numerical Aperture: 이하 NA)를 증가시켜 분해능을 개선시키는 기술이다. 이때, 상기 액체에서 전파해 나가는 광원은 그 실제 파장이 공기 중에서 파장을 해당 매질의 굴절률로 나눈 값에 해당한다. 193nm의 광원(ArF 레이저)을 사용할 때, 물을 매질로 선택할 경우 물의 굴절률이 1.44이므로 실제 물을 거쳐간 ArF 레이저의 파장은 193nm에서 134nm로 감소한다. 이는 통상적으로 분해능을 증가시키기 위하여 F2 레 이저(157nm)와 같이 파장이 더욱 짧은 광원을 사용하는 것과 동일한 효과를 가져온다. Immersion lithography is a technique that fills any liquid between the final projection lens and the wafer and improves the resolution by increasing the numerical aperture (NA) of the optical system by the refractive index of the liquid. In this case, the light source propagating from the liquid corresponds to a value in which the actual wavelength is divided by the refractive index of the medium in the air. When using a 193nm light source (ArF laser), when the water is selected as the medium, the refractive index of the water is 1.44, so the wavelength of the ArF laser passing through the water decreases from 193nm to 134nm. This typically has the same effect as using a light source with a shorter wavelength, such as an F2 laser (157 nm), to increase resolution.
도 1은 이멀젼 노광장치의 장점을 나타낸 그래프이다. 이멀젼 노광장치를 사용할 때, 주어진 피치에서 NA가 고정되어 있을 경우 초점여유도(DOF)가 증가함을 확인할 수 있다. 또한, NA를 1보다 크게 증가시켰을 때 렌즈의 분해능이 더 좋아진다.1 is a graph showing the advantages of the emulsion exposure apparatus. When the emulsion exposure apparatus is used, it can be seen that the depth of focus (DOF) increases when NA is fixed at a given pitch. In addition, the resolution of the lens is better when the NA is increased to greater than 1.
50㎚급 디바이스를 개발을 위해 상술한 바와 같은 이멀젼 리소그래피를 이용하기 위해서는 이멀젼 리소그래피용 액체 조성물을 적용해야 하는데, 이때 해결해야 하는 문제는 첫째, 웨이퍼의 미세 토폴로지(topology) 위에서 이멀젼 리소그래피용 액체 조성물이 완전히 채워지도록 해야 하는 것과, 둘째, 감광막과 액체 조성물의 사이에 존재하는 마이크로 버블을 완전히 제거해야 하는 것이다.In order to use the emulsion lithography as described above for the development of a 50 nm-class device, a liquid composition for emulsion lithography should be applied. The problem to be solved is firstly, for the emulsion lithography on the fine topology of the wafer. The liquid composition must be completely filled, and secondly, the microbubble existing between the photosensitive film and the liquid composition must be completely removed.
도 2는 종래기술에 따른 이멀젼 리소그래피 공정에 따른 문제점의 일예를 도시하는 단면도로서, 미세 토폴로지를 갖는 웨이퍼(10) 위에 이멀젼 리소그래피용 액체 조성물(20)을 코팅하였을 때, 웨이퍼(10)의 미세 토폴로지 위에서 이멀젼 리소그래피용 액체 조성물(20)이 완전히 채워지지 않음("A"로 표시됨)을 나타낸다.FIG. 2 is a cross-sectional view showing an example of a problem caused by an emulsion lithography process according to the prior art, which is obtained when the
상기와 같이 이멀젼 리소그래피용 액체 조성물(20)로 채워지지 않은 부분들은 공기에 의해 채워져 있기 때문에, 노광시 주위와의 굴절률 차이로 인해 패턴의 해상도가 심하게 나빠지는 문제점이 발생한다.Since the portions that are not filled with the
본 발명의 목적은 상기 종래기술의 문제점을 해결하기 위한 것으로, 이멀젼 리소그래피 공정에 사용할 특정의 계면활성제를 포함하는 새로운 조성의 이멀젼 리소그래피용 액체 조성물 및 이러한 이멀젼 리소그래피용 액체 조성물을 이용한 리소그래피 방법을 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art, and a liquid composition for emulsion lithography with a new composition comprising a specific surfactant to be used in an emulsion lithography process and a lithographic method using such a liquid composition for emulsion lithography. To provide.
또한, 본 발명의 목적은 상기 이멀젼 리소그래피용 액체 조성물을 사용하는 이멀젼 리소그래피 장치, 반도체 소자 및 반도체 소자 제조방법을 제공하는 것이다.It is also an object of the present invention to provide an emulsion lithography apparatus, a semiconductor device, and a method for manufacturing a semiconductor device using the liquid composition for emulsion lithography.
상기 목적을 달성하기 위하여 본 발명에서는 물을 주성분으로 하고, 첨가제로서 비이온성 계면활성제를 포함하는 이멀젼 리소그래피용 액체 조성물을 제공한다.In order to achieve the above object, the present invention provides a liquid composition for emulsion lithography comprising water as a main component and a nonionic surfactant as an additive.
본 발명에서 사용되는 계면활성제의 특징은 광원에 대하여 투명해야 하고, 계면활성제를 포함하는 이멀젼 리소그래피용 액체 조성물의 굴절률이 물의 굴절률과 비슷해야 하며, 계면활성제를 첨가함으로 인해 이멀젼 리소그래피용 액체 조성물에 거품이 발생하지 않아야 한다.Characteristic of the surfactant used in the present invention should be transparent to the light source, the refractive index of the liquid composition for emulsion lithography comprising the surfactant should be similar to the refractive index of water, the liquid composition for emulsion lithography due to the addition of the surfactant There should be no bubbles in the.
상기의 조건을 만족시키기 위한 계면활성제로는 비이온성 계면활성제가 바람직하며, 아울러 방향족기가 포함되지 않는 것이 더욱 바람직하다.As surfactant for satisfying the above conditions, a nonionic surfactant is preferable, and it is more preferable that an aromatic group is not contained.
이러한 본 발명에 따른 상기 비이온성 계면활성제는 하기 화학식 1로 표시되는 것이 바람직하다.The nonionic surfactant according to the present invention is preferably represented by the following formula (1).
[화학식 1][Formula 1]
상기 식에서,Where
R은 탄소수 1 내지 40의 탄화수소기이고,R is a hydrocarbon group of 1 to 40 carbon atoms,
n은 10 내지 10000 중에서 선택되는 정수이다.n is an integer selected from 10-10000.
이때, 계면활성제의 함량은 전체 조성물에 대해 0.01∼5 중량%인 것이 바람직하고, 0.1∼1 중량%인 것이 더욱 바람직하다.At this time, the content of the surfactant is preferably 0.01 to 5% by weight, more preferably 0.1 to 1% by weight based on the total composition.
상기 계면활성제의 함량이 전체 조성물에 대해 5 중량%를 초과하면 노광시 계면활성제에 의해 렌즈가 오염되는 문제점이 있고, 또한 전체 조성물에 대해 0.01 중량% 보다 적게 사용되면 계면활성제의 효과가 미미한 문제점이 있어 바람직하지 않다.If the amount of the surfactant exceeds 5% by weight of the total composition, there is a problem that the lens is contaminated by the surfactant during exposure, and if less than 0.01% by weight of the total composition is used, the effect of the surfactant is insignificant It is not desirable.
상기 화학식 1의 화합물의 바람직한 예로는 폴리옥시에틸렌 라우릴 에테르, 폴리옥시에틸렌 세틸 에테르, 폴리옥시에틸렌 스테아릴 에테르, 폴리옥시에틸렌 올레일 에테르, 폴리옥시에틸렌 이소옥틸사이클로헥실 에테르, 폴리옥시에틸렌 소르비탄 모노올레이트, 폴리옥시에틸렌 소르비탄 모노스테아레이트, 폴리옥시에틸렌 소르비탄 트리올레이트 또는 이들의 혼합물을 들 수 있다.Preferred examples of the compound of
또한, 본 발명에서 사용되는 물은 탈이온수로서, 그 온도는 20 내지 25℃인 것이 바람직하고, 더욱 바람직하게는 22 내지 23℃이며, 여과하여 불순물을 제거한 것을 사용한다.In addition, the water used by this invention is deionized water, It is preferable that the temperature is 20-25 degreeC, More preferably, it is 22-23 degreeC, The thing which filtered and removed impurities is used.
아울러, 상기 여과에 의해 불순물이 제거된 탈이온수와 상기 계면활성제를 혼합한 후, 다시 한번 여과하여 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 제조하는 것이 바람직하다.In addition, it is preferable to prepare a liquid composition for emulsion lithography according to the present invention by mixing the deionized water from which impurities are removed by the filtration with the surfactant and then filtering again.
본 발명의 이멀젼 리소그래피용 액체 조성물은 상기 화학식 1로 표시되는 비이온성 계면활성제를 포함함으로써 액체 조성물의 표면 장력을 감소시키기 때문에 일반적인 웨이퍼의 경우 뿐만 아니라 미세 토폴로지를 갖는 웨이퍼 위에서 액체 조성물이 완전히 채워지지 않거나 부분적으로 집중되는 문제점을 해결하고, 감광막과 액체 조성물의 사이에 존재하는 마이크로 버블을 제거한다.Since the liquid composition for emulsion lithography of the present invention reduces the surface tension of the liquid composition by including the nonionic surfactant represented by Formula 1, the liquid composition may not be completely filled not only on the general wafer but also on the wafer having a fine topology. It solves the problem of missing or partially concentrated and removes microbubbles present between the photoresist and the liquid composition.
또한, 본 발명에서는 이멀젼 렌즈부, 웨이퍼 스테이지 및 투영 렌즈부를 포함하는 이멀젼 리소그래피 장치에 있어서, 상기 이멀젼 렌즈부에 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 이용하는 이멀젼 리소그래피 장치를 제공한다.In addition, the present invention provides an emulsion lithography apparatus comprising an emulsion lens unit, a wafer stage, and a projection lens unit, wherein the emulsion lens unit uses the liquid composition for emulsion lithography according to the present invention. .
상기 이멀젼 렌즈부는 이멀젼 리소그래피용 액체 조성물의 수용부, 공급부 및 회수부로 구성되는 것이다.The emulsion lens portion is composed of a receiving portion, a supply portion and a recovery portion of the liquid composition for emulsion lithography.
상기 웨이퍼 스테이지에 장착되는 웨이퍼는 일반적인 웨이퍼 뿐만 아니라 미세 토폴로지를 갖는 웨이퍼를 포함하며, 상기 본 발명에 따른 이멀젼 리소그래피 장치는 샤워형(shower type), 배쓰형(bath type) 또는 잠수형(submarine type)이다.The wafer mounted on the wafer stage includes a wafer having a fine topology as well as a general wafer, and the emulsion lithography apparatus according to the present invention is a shower type, a bath type or a submarine type. to be.
도 3a를 참조하면, 웨이퍼(10) 전체를 이멀젼 리소그래피용 액체 조성물(20)이 감싸도록 이멀젼 렌즈부(30)를 구비하는 배쓰형 이멀젼 리소그래피 장치를 도시한다.Referring to FIG. 3A, a bath-type emulsion lithography apparatus is provided that includes an
도 3b를 참조하면, 투영 렌즈부(50)의 하단에 이멀젼 리소그래피용 액체 조성물(20)을 담을 수 있는 이멀젼 렌즈부(30)를 구비하는 샤워형 이멀젼 리소그래피 장치를 도시한다.Referring to FIG. 3B, there is shown a shower type emulsion lithography apparatus having an
도 3c를 참조하면, 웨이퍼(10)가 장착되는 웨이퍼 스테이지(40)가 이멀젼 리소그래피용 액체 조성물(20)에 잠기는 형태의 이멀젼 렌즈부(30)를 구비하는 잠수형 이멀젼 리소그래피 장치를 도시한다.Referring to FIG. 3C, there is shown a submerged emulsion lithography apparatus having an
또한, 본 발명에서는 상기 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 사용하는 이멀젼 리소그래피 방법을 제공한다.The present invention also provides an emulsion lithography method using the liquid composition for emulsion lithography according to the present invention.
또한, 본 발명에서는 상기 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 사용하여 제조된 반도체 소자를 제공한다.The present invention also provides a semiconductor device manufactured using the liquid composition for emulsion lithography according to the present invention.
아울러, 본 발명에서는 하기의 단계를 포함하는 반도체 소자 제조방법을 제공한다.In addition, the present invention provides a semiconductor device manufacturing method comprising the following steps.
(a) 웨이퍼를 제공하는 단계;(a) providing a wafer;
(b) 상기 웨이퍼에 감광막을 증착하는 단계;(b) depositing a photosensitive film on the wafer;
(c) 상기 감광막이 증착된 웨이퍼를 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 사용하여 노광하는 단계; 및(c) exposing the wafer having the photoresist deposited thereon using the liquid composition for emulsion lithography according to the present invention; And
(d) 상기 결과물을 현상하여 패턴을 얻는 단계를 포함하는 것을 특징으로 하는 반도체 소자 제조방법.and (d) developing the resultant to obtain a pattern.
상기 웨이퍼는 일반적인 웨이퍼 또는 미세 토폴로지를 갖는 웨이퍼를 포함한다.The wafer includes a general wafer or a wafer having a fine topology.
또한, 상기 (c) 단계는 적어도 1회 이상 광원이 상기 본 발명에 따른 이멀젼 리소그래피용 액체 조성물을 통과하도록 하는 공정을 포함한다.In addition, the step (c) includes a step of allowing the light source to pass through the liquid composition for emulsion lithography according to the present invention at least one or more times.
이하 본 발명을 실시예에 의하여 상세히 설명한다. 단, 실시예는 본 발명을 예시하는 것일 뿐 본 발명이 하기 실시예에 의하여 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail by examples. However, the examples are only for exemplifying the present invention and the present invention is not limited by the following examples.
제조예 1Preparation Example 1
알드리치(Aldrich)사의 폴리옥시에틸렌 라우릴 에테르(polyoxyethylene lauryl ether) (상품명 Brij?35) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.A liquid composition for emulsion lithography was prepared by dissolving 1 g of Aldrich's polyoxyethylene lauryl ether (trade name Brij®35) in 500 g of deionized water.
제조예 2Preparation Example 2
알드리치사의 폴리옥시에틸렌 세틸 에테르(polyoxyethylene cetyl ether) (상품명 Brij? 58) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene cetyl ether (trade name Brij? 58) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 3Preparation Example 3
알드리치사의 폴리옥시에틸렌 스테아릴 에테르(polyoxyethylene stearyl ether) (상품명 Brij? 78) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene stearyl ether (trade name Brij? 78) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 4Preparation Example 4
알드리치사의 폴리옥시에틸렌 올레일 에테르(polyoxyethylene oleyl ether) (상품명 Brij? 98) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene oleyl ether (trade name Brij? 98) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 5Preparation Example 5
알드리치사의 폴리옥시에틸렌 이소옥틸사이클로헥실 에테르(polyoxyethylene isooctylcyclohexyl ether) (상품명 Triton?X-100) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene isooctylcyclohexyl ether (trade name Triton X-100) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 6Preparation Example 6
알드리치사의 폴리옥시에틸렌 소르비탄 모노올레이트(polyoxyethylene sorbitan monolaurate) (상품명 Tween? 20) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene sorbitan monolaurate (trade name Tween® 20) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 7Preparation Example 7
알드리치사의 폴리옥시에틸렌 소르비탄 모노스테아레이트(polyoxyethylene sorbitan monostearate) (상품명 Tween? 60) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene sorbitan monostearate (trade name Tween 60) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 8Preparation Example 8
알드리치사의 폴리옥시에틸렌 소르비탄 모노올레이트(polyoxyethylene sorbitan monooleate) (상품명 Tween? 80) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene sorbitan monooleate (trade name Tween® 80) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
제조예 9Preparation Example 9
알드리치사의 폴리옥시에틸렌 소르비탄 트리올레이트(polyoxyethylene sorbitan trioleate) (상품명 Tween? 85) 1g을 500g의 탈이온수에 용해시켜 이멀젼 리소그래피용 액체 조성물을 제조하였다.1 g of Aldrich's polyoxyethylene sorbitan trioleate (trade name Tween® 85) was dissolved in 500 g of deionized water to prepare a liquid composition for emulsion lithography.
실시예 1∼실시예 9Examples 1 to 9
상기 제조예 1 내지 제조예 9에서 제조된 이멀젼 리소그래피용 액체 조성물의 굴절률을 측정한 결과, 4.2 내지 4.4로 적당함을 알 수 있었다.As a result of measuring the refractive index of the liquid composition for emulsion lithography prepared in Preparation Examples 1 to 9, it was found that it is suitable as 4.2 to 4.4.
이상에서 살펴본 바와 같이, 본 발명에서는 물을 주성분으로 하고, 첨가제로서 비이온성 계면활성제인 화학식 1의 화합물을 포함하는 이멀젼 리소그래피용 액체 조성물을 사용하여 이멀젼 리소그래피 공정을 수행함으로써, 계면활성제에 의해 액체 조성물의 표면 장력이 감소되기 때문에 웨이퍼의 미세 토폴로지 위에서 액체 조성물이 완전히 채워지지 않거나 부분적으로 집중되는 문제점이 해결되고, 감광막과 액체 조성물의 사이에 존재하는 마이크로 버블이 제거된다.As described above, in the present invention, by performing an emulsion lithography process using a liquid composition for emulsion lithography comprising water as a main component and a compound of formula (I) which is a nonionic surfactant as an additive, Since the surface tension of the liquid composition is reduced, the problem that the liquid composition is not completely filled or partially concentrated over the fine topology of the wafer is solved, and microbubbles existing between the photoresist and the liquid composition are removed.
Claims (14)
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| KR1020040036609A KR100680402B1 (en) | 2004-05-22 | 2004-05-22 | Liquid composition for emulsion lithography and lithography method using same |
| US10/999,528 US20050260528A1 (en) | 2004-05-22 | 2004-11-30 | Liquid composition for immersion lithography and lithography method using the same |
| TW093137836A TWI307456B (en) | 2004-05-22 | 2004-12-07 | Liquid composition for immersion lithography and lithography method using the same |
| JP2004369334A JP2005340757A (en) | 2004-05-22 | 2004-12-21 | Liquid composite for immersion lithography, lithographing method using the same, immersion lithographing equipment, semiconductor device, and its manufacturing method |
| NL1027911A NL1027911C2 (en) | 2004-05-22 | 2004-12-28 | Liquid composition for immersion lithography and lithography method using it. |
| CNA2004100819832A CN1700096A (en) | 2004-05-22 | 2004-12-29 | Liquid composition for immersion lithography and lithography method using the same |
| DE102004063246A DE102004063246A1 (en) | 2004-05-22 | 2004-12-29 | Liquid composition for immersion lithography and lithographic processes using the same |
| US11/767,275 US20080176047A1 (en) | 2004-05-22 | 2007-06-22 | Liquid Composition for Immersion Lithography and Lithography Method Using the Same |
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| KR100682152B1 (en) | 2004-07-02 | 2007-02-12 | 주식회사 하이닉스반도체 | Liquid composition for immersion lithography and lithography method using same |
| KR100734672B1 (en) * | 2005-12-28 | 2007-07-02 | 동부일렉트로닉스 주식회사 | Pattern formation method of immersion lithography |
| KR100685598B1 (en) * | 2005-12-30 | 2007-02-22 | 주식회사 하이닉스반도체 | Method of forming mask pattern for ion implantation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61249047A (en) | 1985-04-26 | 1986-11-06 | Fuji Photo Film Co Ltd | Silver halide photographic sensitive material |
| JPH09111150A (en) * | 1995-10-13 | 1997-04-28 | Mitsubishi Rayon Co Ltd | Emulsion coating composition |
| JPH10303114A (en) * | 1997-04-23 | 1998-11-13 | Nikon Corp | Immersion aligner |
| JP2001312073A (en) | 2000-04-28 | 2001-11-09 | Shin Sti Technology Kk | Developing solution for negative photoresist |
| JP2004245906A (en) | 2003-02-12 | 2004-09-02 | Konica Minolta Holdings Inc | Developing solution for planographic printing plate material and method for processing planographic printing plate material |
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| JP3774985B2 (en) * | 1997-04-24 | 2006-05-17 | ダイキン工業株式会社 | Polytetrafluoroethylene granular powder and process for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61249047A (en) | 1985-04-26 | 1986-11-06 | Fuji Photo Film Co Ltd | Silver halide photographic sensitive material |
| JPH09111150A (en) * | 1995-10-13 | 1997-04-28 | Mitsubishi Rayon Co Ltd | Emulsion coating composition |
| JPH10303114A (en) * | 1997-04-23 | 1998-11-13 | Nikon Corp | Immersion aligner |
| JP2001312073A (en) | 2000-04-28 | 2001-11-09 | Shin Sti Technology Kk | Developing solution for negative photoresist |
| JP2004245906A (en) | 2003-02-12 | 2004-09-02 | Konica Minolta Holdings Inc | Developing solution for planographic printing plate material and method for processing planographic printing plate material |
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