KR100672642B1 - Pad portion of liquid crystal display and forming method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pad portion of a liquid crystal display device and a method of forming the same, wherein the pad portion of the liquid crystal display device has a modified structure to facilitate contact of a needle pin for automatic inspection. A plurality of pad wires spaced at equal intervals, a protective film formed to cover the plurality of pad wires, and larger than a corresponding width of the automatic inspection probe so that only one side of the pad wire is left on a side at a predetermined portion of each pad wire. A protective film hole formed by removing the protective film and the pad wiring by a width, and a transparent conductive film pattern formed in the protective film hole and the sidewalls.

Auto Probing, Shield Hole, Transparent Conductive Film, Data Pad, Lift Off, Pad Wiring

Description

Pad portion of liquid crystal display device and method for forming the same {Pad array of Liquid Crystal Display Device and method for Forming of the same}

1 is a cross-sectional view showing a conventional general liquid crystal display device

2 is a flowchart illustrating a process sequence of a liquid crystal display manufactured by a conventional four mask process.

3 is a cross-sectional view taken along line II ′ of FIG. 1 during a conventional four mask process.

4 is a plan view showing a data pad portion of a conventional liquid crystal display device;

FIG. 5 is a cross-sectional view taken along line II-II 'of FIG. 4 during a conventional four mask process.

6 is a flowchart showing a process sequence of a liquid crystal display device manufactured by a three mask process.

7 is a cross-sectional view illustrating one pixel of a liquid crystal display of the present invention.

Cross-sectional view corresponding to line III-III 'of FIG. 7 of FIG.

9A to 9H are process flowcharts of a process performed on line III-III 'of FIG. 7.

10 is a cross-sectional view of a data pad portion of a liquid crystal display device manufactured by a three-mask process and a probe for automatic inspection corresponding to the data pad portion.

11A through 11D are process flowcharts of processes performed in the data pad unit of FIG. 10.

12 is a plan view illustrating a data pad part of a liquid crystal display according to a first exemplary embodiment of the present invention.

FIG. 13 is a cross-sectional view taken along line IV-IV 'of FIG. 12.

14A to 14D are process flowcharts of a process performed along line IV to IV 'of FIG. 12.

15 is a plan view illustrating a data pad portion of a liquid crystal display according to a second exemplary embodiment of the present invention.

16 is a cross-sectional view taken along the line VV ′ of FIG. 15.

17A to 17D are process flowcharts of a process performed along the line VV ′ of FIG. 15.

* Description of symbols on the main parts of the drawings *

100: lower substrate 112: data wiring

113: transparent conductive film 114a: amorphous silicon layer

114b: n + layer 115: gate insulating film

116: protective film 122: data pad wiring

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a pad portion of a liquid crystal display device and a method of forming the same in which the structure is changed to facilitate contact of the automatic inspection probe during the automatic inspection.

As the information society develops, the demand for display devices is increasing in various forms, and in recent years, liquid crystal display devices (LCDs), plasma display panels (PDPs), electro luminescent displays (ELD), and vacuum fluorescent (VFD) Various flat panel display devices such as displays have been studied, and some of them are already used as display devices in various devices.

Among them, LCD is the most widely used as the substitute for CRT (Cathode Ray Tube) for mobile image display device because of its excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention has been developed in various ways such as a television and a computer monitor for receiving and displaying broadcast signals.

In order to use such a liquid crystal display as a general screen display device in various parts, it is a matter of how high quality images such as high definition, high brightness and large area can be realized while maintaining the characteristics of light weight, thinness and low power consumption. Can be.

A general liquid crystal display device may be largely divided into a liquid crystal panel displaying an image and a driving unit for applying a driving signal to the liquid crystal panel, wherein the liquid crystal panel includes first and second glass substrates bonded to each other with a predetermined space; It consists of a liquid crystal layer injected between the said 1st, 2nd glass substrate.

Herein, the first glass substrate (TFT array substrate) includes a plurality of gate lines arranged in one direction at a predetermined interval, a plurality of data lines arranged at regular intervals in a direction perpendicular to the gate lines, and A plurality of thin film transistors which are switched by a plurality of pixel electrodes formed in a matrix form in each pixel region defined by crossing each of the gate lines and the data lines and the signals of the gate lines to transfer the signals of the data lines to each pixel electrode. Is formed.

The second glass substrate (color filter substrate) includes a light shielding layer for blocking light in portions other than the pixel region, an R, G, and B color filter layers for expressing color colors, and a common electrode for implementing an image. Is formed.

The first and second glass substrates are bonded to each other by a seal material having a predetermined space by a spacer and having a liquid crystal injection hole, so that the liquid crystal is injected between the two substrates.

Here, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by osmotic pressure when the liquid crystal injection hole is immersed in the liquid crystal container by maintaining the vacuum state between the two substrates bonded by the real material. When the liquid crystal is injected as described above, the liquid crystal injection hole is sealed with a sealing material.

The driving principle of the general liquid crystal display device uses the optical anisotropy and polarization property of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the arrangement of molecules can be controlled by artificially applying an electric field to the liquid crystal. Accordingly, when the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light may be refracted in the molecular arrangement direction of the liquid crystal by optical anisotropy to express image information.

As described above, the liquid crystal panel is produced through various processes from washing the injected substrate and depositing a thin film on the cleaned substrate to inspecting the electrical and optical abnormalities of the manufactured panel. In particular, the inspection process must be performed in that it improves the quality of the liquid crystal panel and screens out defective products as a finishing step of the production process.

Such a liquid crystal panel is inspected on the pad part side in an A / P (auto probe) process. That is, in the automatic inspection process, the gate pad portion and the data pad portion configured on the lower substrate side are connected to the pins of the inspection equipment, and a voltage is applied to determine whether a normal signal is detected to determine whether there is an abnormality in each wiring.

In general, the process for inspecting the electrical characteristics of the liquid crystal panel is performed by a needle type probe device. The needle-type probe device includes a needle pin directly contacting the transparent conductive film pattern of the pad part, and a body part applying an electrical signal to the pin.

Hereinafter, a liquid crystal display, a pad unit of the liquid crystal display, and an inspection method thereof will be described with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a conventional general liquid crystal display device.

As shown in FIG. 1, a conventional liquid crystal display device includes a gate line 11 and a data line 12 that are vertically intersected on a lower substrate (see 10 in FIG. 3) to define a pixel area, and are formed in the pixel area. The thin film transistor including the gate electrode 11a, the semiconductor layer 14 and the source / drain electrodes 12a and 12b is formed at the intersection of the pixel electrode 13 and the gate line 11 and the data line 12. Is formed.

Here, the thin film transistor is a switching element, and operates to apply a data signal to the pixel electrode 13 by a switching signal applied to the gate electrode 11a.

In addition, the pixel electrode 13 is formed of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO), and serves to transmit light emitted from an internal backlight.

FIG. 2 is a flowchart illustrating a process sequence of a liquid crystal display device manufactured by a conventional four mask process, and FIG. 3 is a cross-sectional view illustrating the line II ′ of FIG. 1 during the conventional four mask process. 4 is a plan view illustrating a data pad portion of a conventional liquid crystal display, and FIG. 5 is a cross-sectional view taken along line II to II 'of FIG. 4 during a conventional four mask process.

2 to 5, the process sequence of the liquid crystal display manufactured by the conventional four mask process is as follows.

First, a metal material layer is deposited on the substrate 10, and then selectively removed by a first mask (not shown) to form a gate line (see 11 in FIG. 1), a gate electrode 11a, and a gate pad (not shown). C) (10S).

Subsequently, a gate insulating film 15, an amorphous silicon layer 14a, an n + layer 14b, and a metal material layer (the same layer as in FIG. 1 and FIG. 22 in FIG. 5) were sequentially deposited on the entire surface of the substrate 10. Thereafter, the metal material layer, the n + layer, and the amorphous silicon layer may be selectively removed by a second mask (not shown) to form a width of the metal material layer and the n + layer 14b. ) And the amorphous silicon layer 14a. 4 and 5, the metal material layer 22, the n + layer 14b, and the amorphous silicon layer 14a remain in the data pad part. Here, the second mask is a photosensitive film in which a portion corresponding to the channel width of the semiconductor layer 14 is a transflective portion as a diffraction exposure mask, and is partially removed during ashing treatment of the second mask.

Subsequently, the metal material layer and the n + layer corresponding to the second exposed channel portion are etched using the second mask from which the transflective portion is removed (20S). After this process, the remaining metal material layer becomes the source / drain electrodes 12a and 12b, and the n + layer 14b and the amorphous silicon layer 14a are defined as the semiconductor layer 14. In the second etching using the second mask, the n + layer 14b and the amorphous silicon layer 14a having a predetermined thickness are partially removed by overetching the metal material layer to expose the channel of the semiconductor layer 14. Be sure to

Subsequently, the protective film 16 is deposited on the entire surface of the substrate 10, and then selectively removed using a third mask (not shown) to form a protective film hole. In this case, the portion to be removed is a portion at which the contact of the transparent conductive film to be formed next to the drain electrode 12b is made and a portion at which the contact of the transparent conductive film to be in contact with the data pad part is made. At this time, in the process of etching the passivation layer in the drain electrode region and the data pad portion, overetching occurs to remove the predetermined drain electrode material 12b and the data pad wiring 22 of the passivation layer forming portion.

Subsequently, a transparent conductive film is deposited on the entire surface of the substrate 10 including the passivation layer 16, and then selectively removed using a fourth mask (not shown) to contact the drain electrode 12b. (13) and a transparent conductive film pattern 13a in contact with the data pad wiring 22 in the data pad portion.

In the four mask process described above, a photosensitive film pattern is formed on the etching target layer with each mask in each mask process, and the mask is used to form the photoresist pattern.

As shown in FIGS. 4 and 5, when the liquid crystal display is manufactured by the four mask process, the transparent conductive film pattern 13a is formed in the data pad part so as to include the upper width of the data pad wiring 22. A / P (Auto Probing) Probe (Needle Pin) is positioned when the inspection is in progress, the transparent conductive film pattern formed on the surface of the protective film 16 even if the automatic inspection probe is not located inside the protective hole The contact with (13a) was easy, and almost no error due to poor contact occurred.

The number of exposure processes and photolithography processes are determined according to the number of masks, and since the alignment of each mask is required, the yield of the liquid crystal display device produced according to the number of masks is lowered. Efforts have been made to reduce it.

The conventional liquid crystal display as described above has the following problems.

The number of exposure processes and photolithography processes are determined according to the number of masks, and since the alignment of each mask is required, the yield of the liquid crystal display device produced according to the number of masks is lowered. Has been made. That is, there has been an improvement from a four mask process to a three mask process, in which case the following problems occur.

When the lower substrate is formed of three masks, the upper and lower substrates are bonded together, and then the lower substrate pad portion is automatically inspected. At this time, the width of the transparent conductive film pattern of the pad portion is smaller than that of the movable inspection probe. Contact failure occurs and automatic inspection is impossible.

An object of the present invention is to provide a pad portion of a liquid crystal display device and a method for forming the same, the structure of which is designed to facilitate contact of the automatic inspection probe during automatic inspection.

The pad part of the liquid crystal display of the present invention for achieving the above object, a plurality of pad wiring spaced at equal intervals on the substrate, a protective film formed to cover the plurality of pad wiring, and a predetermined portion of each pad wiring A protective film hole formed by removing the protective film and the pad wiring to a width larger than a corresponding width of the automatic inspection probe so that only one side of the pad wiring is left on the side, and a transparent conductive film pattern formed in the protective film hole and on the sidewall thereof. There is a characteristic in that it is made.

The protective film hole is formed to have a width larger than a corresponding width of the automatic inspection probe at a predetermined portion of each pad wiring, and is formed inside the pad wiring at other portions.

As the corresponding width of the automatic inspection probe, the width of the automatic inspection probe and the left and right shifting margin width are considered.

One side of the pad line and the transparent conductive layer pattern are side-contacted in the passivation layer hole.

The pad wiring is a data pad wiring.

A semiconductor layer is further formed under the data pad line with the same width.

The pad wiring is a gate pad wiring.

In addition, the pad portion of the liquid crystal display device of the present invention for achieving the same object, a plurality of pad wiring spaced at equal intervals on the substrate, a protective film formed to cover the plurality of pad wiring, and a predetermined portion of each pad wiring The first and second passivation layer holes formed by removing the passivation layer and the pad line, spaced apart from each other, and passing through both sides of the pad wiring, respectively, inside and sidewalls of the first and second passivation layer holes, and the first and second Another feature is that the transparent conductive film pattern is formed to pass between the two protective film.

The pad wiring between the first and second passivation layer holes and the transparent conductive layer pattern are side contacted.

The pad wiring is a data pad wiring.

A semiconductor layer is further formed under the data pad line with the same width.

The pad wiring is a gate pad wiring.

In addition, the method of forming the pad portion of the liquid crystal display device of the present invention for achieving the same object comprises the steps of forming a plurality of pad wiring spaced at equal intervals on the substrate, and forming a protective film to cover the plurality of pad wiring Forming a photoresist pattern by exposing and developing the photoresist on the entire surface of the passivation layer, exposing and developing the photoresist to open one side of each pad line with a width larger than a corresponding width of the automatic inspection probe; Removing the protective film and the pad wiring using the photosensitive film pattern as a mask to form a protective film hole; depositing a transparent conductive film on the entire surface of the substrate including the photosensitive film pattern; and lifting the photosensitive film pattern and the transparent conductive film thereon. Lifting off to form a transparent conductive film pattern in the sidewalls of the passivation hole and on the sidewalls; Yirueojim to have its features.

In addition, in the method of forming the pad portion of the liquid crystal display device of the present invention for achieving the same object, the corresponding width of the automatic inspection probe is taken into consideration the width of the automatic inspection probe and the left and right shifting margin width.

The pad wiring is a data pad wiring.

And depositing a semiconductor layer under the data pad wiring material first when forming the data pad wiring, and patterning the semiconductor layer with the same width as the data pad wiring.

The pad wiring is a gate pad wiring.

In addition, the method of forming the pad portion of the liquid crystal display device of the present invention for achieving the same object is a step of forming a plurality of pad wiring spaced at equal intervals on the substrate, and forming a protective film to cover the plurality of pad wiring And first and second openings of one side and the other side of each pad line by being spaced apart from each other by a predetermined interval in response to each of the pad lines by exposing and developing the photoresist on the entire surface of the passivation layer. Forming a photoresist pattern defining a protective layer hole, removing the protective layer and pad wiring using the photoresist pattern as a mask to form first and second protective layer holes, and forming a photoresist layer on the entire substrate including the photoresist pattern Depositing a transparent conductive film and lifting the photosensitive film pattern and the transparent conductive film thereon to form a transparent conductive film; In the yirueojim comprises a transparent conductive film and forming a pattern on the side wall there is the feature.

The pad wiring is a data pad wiring.

Depositing a semiconductor layer under the data pad wiring material first when forming the data pad wiring, and patterning the semiconductor layer with the same width as the data pad wiring.

The pad wiring is a gate pad wiring.

Hereinafter, a liquid crystal display device, a pad portion of a liquid crystal display device, and a method of forming the same will be described in detail with reference to the accompanying drawings.

FIG. 6 is a flowchart illustrating a process sequence of the liquid crystal display of the present invention manufactured by a three mask process, FIG. 7 is a plan view illustrating one pixel of the liquid crystal display of the present invention, and III-III ′ of FIG. 7 of FIG. 8. 9A to 9H are process flowcharts of a process performed on line III-III 'of FIG. 7.

As shown in FIG. 7, the liquid crystal display of the present invention manufactured by a three-mask process includes a gate line 31 and a data line 32 that vertically intersect on a substrate 30 to define a pixel region, and a pixel region. A gate electrode 31a and a semiconductor layer (see 34 in FIG. 8, a data line and a source / drain electrode under the pixel electrode 33 formed at the intersection with the gate line 31 and the data line 32). Formation), and a thin film transistor composed of source / drain electrodes 32a and 32b.

As shown in FIG. 8, the thin film transistor includes a gate electrode 31a formed in a predetermined region on the substrate 30, a gate insulating layer 35 formed on the entire surface of the substrate 30 including the gate electrode 31a, and the gate. The semiconductor layer 34 formed on the gate insulating layer 35 so as to overlap the electrode 31a, the source / drain electrodes 32a and 32b formed on both sides of the semiconductor layer 34 and spaced apart from each other, and the drain electrode. And a protective film 36 having a protective film hole exposing side portions of the side 32b, and a pixel electrode 33 formed on sidewalls and inside of the protective film hole and in side contact with the drain electrode 32b. Here, the semiconductor layer 34 is composed of an amorphous silicon layer 34a and an n + layer 34b stacked on each other, and the n + layer 34b is removed from the channel portion.

A process performed in the thin film transistor forming unit of the liquid crystal display of the present invention will be described with reference to FIGS. 6 and 9A to 9H.

First, as shown in FIG. 9A, a metal material layer is deposited on the substrate 30, and then selectively removed by a first mask (not shown) to form the gate line 31, the gate electrode 31a, and the gate pad wiring. (Not shown) is formed (30S).

As illustrated in FIG. 9B, a gate insulating layer 35, an amorphous silicon layer 34a, an n + layer 34b, and a metal material layer (the same layer as in FIG. 7) are sequentially deposited on the entire surface of the substrate 30.

As shown in FIG. 9C, the metal material layer, the n + layer, and the width of the semiconductor layer 34 are formed by selectively removing the metal material layer, the n + layer, and the amorphous silicon layer using a second mask (not shown). 34b and the amorphous silicon layer 34a are left. Here, the second mask is a photosensitive film in which a portion corresponding to the channel width of the semiconductor layer 34 is defined as a transflective portion as a diffraction exposure mask, and is partially removed during ashing of the second mask.

As illustrated in FIG. 9D, the metal material layer and the n + layer corresponding to the second exposed channel portion are etched using the second mask from which the transflective portion is removed (20S). After this process, the remaining metal material layer becomes the source / drain electrodes 32a and 32b, and the n + layer 34b and the amorphous silicon layer 34a are defined as the semiconductor layer 34. In the second etching using the second mask, the n + layer 34b and the amorphous silicon layer 34a having a predetermined thickness are partially overetched by exposing the metal material layer to expose the channel of the semiconductor layer 34. To be removed.

Subsequently, the passivation layer 36 is deposited on the entire surface of the substrate 30 (51S).

After the photoresist (PR: Photo Resist), which is the same layer as the photoresist layer 37, is completely coated on the passivation layer 36 (52S), as shown in FIG. 9E, the photoresist layer PR is exposed and developed to form a photoresist layer pattern 37. do.

As shown in FIG. 9F, the protective layer 36 is selectively removed using the photosensitive layer pattern 37 as a third mask to form a protective layer hole (53S). In this case, the portion to be removed is a portion at which the contact of the transparent conductive film to be formed next to the drain electrode 32b is made and a predetermined portion at which the contact of the transparent conductive film to be in contact with the data pad part is made, and the removing process is dry etched. Is done through. At this time, during etching using the photoresist pattern 37 as a third mask, over-etching occurs in the exposed passivation layer 36 so that the drain electrode 32b, n + layer 34b, and amorphous silicon layer disposed under the passivation layer hole. Both the 34a and the gate insulating film 35 are removed.

As illustrated in FIG. 9G, a transparent conductive film 33 is deposited on the entire surface of the substrate 30 including the passivation layer 36 (54S). In this case, the transparent conductive layer 33 is deposited on the sidewalls of the passivation layer including the upper portion of the photoresist layer pattern 37 and the inside of the passivation layer pattern 37.

As shown in FIG. 9H, the transparent conductive film 33 on the photoresist pattern 37 is stripped 55S together with the photoresist pattern 37 remaining on the passivation layer 36. At this time, the transparent conductive film 33 on the photosensitive film pattern 37 including the photosensitive film pattern 37 is removed by a lift off method, and after the transparent conductive film stripping process is completed. The side contact with the drain electrode 32b in the protective film hole leaves the transparent conductive film 33. As such, the transparent conductive film remaining in the protective film hole is defined as the pixel electrode 33a.

Here, the process of forming the photoresist pattern after the protective film deposition 51S and the photoresist coating 52S, forming the protective film hole and forming the pixel electrode 33 using the same, is performed using one mask, that is, These are processes performed by three masks.

Meanwhile, when the liquid crystal display device is manufactured using the three mask process, if the width of the passivation layer hole of the pad line is maintained in the same shape as in the related art, the forming process will be performed as follows.

10 is a cross-sectional view of a data pad portion of a liquid crystal display device manufactured by a three-mask process and a probe for automatic inspection corresponding to the data pad portion, and FIGS. 11A to 11D are views illustrating a process performed in the data pad portion of FIG. 10. Process flow chart.

First, the gate insulating layer 35 is deposited on the substrate 30.

As shown in FIG. 11A, when the metal material layer, the n + layer 34b, and the amorphous silicon layer 34a are all deposited and etched using a second mask, the metal material layer, the n + layer 34b, and the etching layer are the same width as the data pad line 42 (FIG. 11A). 9), the n + layer 34b and the amorphous silicon layer 34a remain patterned (20S).

Subsequently, a passivation layer is deposited on the entire surface of the gate insulating layer 35 including the data pad line 42 (51S).

Subsequently, after the photoresist film is applied (52S), the photoresist film is exposed and developed using a third mask to form the photoresist pattern 37 (53S).

As shown in FIG. 11B, the protective film 36 is selectively removed using the photosensitive film pattern 37 as a mask to form the protective film hole 40 (53S). At this time, during the dry etching process for forming the protective layer hole 40, the data pad wiring 42, the n + layer 34b, the amorphous silicon layer 34a, and the gate insulating layer 35 under the protective layer 36 are overeated. Each is removed.

As illustrated in FIG. 11C, the transparent conductive film 33 is entirely deposited on the photosensitive film pattern 37 including the protective film hole 40 (54S). At this time, the transparent conductive film 33 is deposited on the upper portion of the photosensitive film pattern 37 and the sidewalls and inside of the protective film hole 40.

As shown in FIG. 11D, the transparent conductive film 33 on the upper portion of the photoresist film pattern 37 is removed by a lift off method. At this time, the transparent conductive film 33 remains in the protective film hole 40 in which the photosensitive film pattern 37 remains, and the remaining transparent conductive film is defined as the transparent conductive film pattern 33b (55S).

As described above, in the three-mask process, since the portion where the transparent conductive film pattern 33b is formed is limited to the protective film hole 40, the line width of the transparent conductive film pattern 33b is determined by the width of the protective film hole 40.

Accordingly, as shown in FIG. 10, when the automatic inspection is performed using the automatic inspection probe 60, the width of the automatic inspection probe 60 applied from the upper portion is about 10 μm, and the automatic inspection probe 60 is used. Considering that the shifting degree of Δ) is ± 10 μm, the automatic inspection probe 60 corresponds to the data pad part over a distance of about 28 ± 2 μm, and the transparent conductive layer pattern 33b is formed inside the protective layer hole. Only a line width of about 22 μm was left, and during the automatic inspection, the automatic inspection probe 60 did not correspond to the transparent conductive film pattern 33b, so that the inspection error occurred.

Therefore, in the case of the liquid crystal display manufactured by the three-mask process, as described above, when the data pad portion is constituted, the automatic inspection probe 60 does not come into contact with the transparent conductive film pattern 33b. There was a problem that could not detect a defect.

Therefore, hereinafter, the pad portion of the liquid crystal display device of the present invention and a method of forming the pad portion thereof, which can be automatically inspected by changing the structure of the pad portion, will be described.

The liquid crystal display of the present invention described below is manufactured by a three mask process, and the pixel portion follows the above three mask process as it is, and changes its shape only in the pad portion so as to correspond to the probe at the time of automatic inspection. Will be widened.

First Embodiment

12 is a plan view illustrating a data pad part of a liquid crystal display according to a first exemplary embodiment of the present invention, and FIG. 13 is a cross-sectional view taken along line IV to IV ′ of FIG. 12.

As shown in FIG. 12, the data pad portion of the liquid crystal display according to the first exemplary embodiment corresponds to the width of the passivation hole formed on each of the plurality of data pad lines spaced apart from each other by a predetermined interval. To form larger.

Here, the corresponding width of the automatic inspection probe 130 is to consider the width and the left and right shifting margin width of the automatic inspection probe 130, as shown in FIG. That is, since the width of the automatic inspection probe 130 is about 10 μm and the left and right shifting margin width is about 10 μm, the substrate corresponding width of the automatic inspection probe 130 is about 28 ± 2 μm. . Therefore, the width of the protective film hole is formed to be larger than 30 μm so that the automatic inspection probe 130 may correspond to the transparent conductive film pattern 113a formed in the protective film hole during the automatic inspection even if the automatic inspection probe 130 is shifted to any side.

The passivation hole 125 is formed in the data pad line 122 of the data pad part, and the shape of the passivation hole 125 is relatively thicker than that of the other part. The passivation hole 125 in a portion relatively thicker than the other portion is formed through one side of the data pad line 122. At this time, as shown in the cross section of the protective film 125 hole, as shown in Fig. 13, the data pad wiring 122 remains only on the other side of the protective film hole, and on one side of the data wiring 122 122) does not remain. In this case, the other side of the data line 122 and the pixel electrode 113 in the passivation hole make a side contact.

Hereinafter, a method of forming the data pad portion of the liquid crystal display according to the first embodiment of the present invention will be described with reference to the above-described drawings. In this case, the pixel portion of the liquid crystal display device of the present invention has the same structure as the liquid crystal display device manufactured by the three mask process (see FIG. 6).

14A to 14D are process flowcharts of a process performed along line IV to IV 'of FIG. 12.

As shown in FIG. 14A, the gate insulating film 115, the same layer as the amorphous silicon layer 114a), the n + layer (the same layer as the 114b), and the metal material layer 122 and the same layer are sequentially deposited on the entire surface of the substrate 100. do.

Subsequently, at the same time as the data wiring forming process of the pixel portion, the metal material layer 122 and the n + layer 114b and the amorphous silicon layer 114a are removed to selectively remove the data pad wiring 122. To form. In this case, the n + layer 114b and the amorphous silicon layer 114a below the data pad wiring 122 are also patterned in the same width.

Subsequently, the passivation layer 116 is deposited on the entire surface of the metal material layer 122.

Subsequently, after the photoresist is coated on the passivation layer 116, the photoresist pattern 117 is formed by exposing and developing the photoresist. In this case, the photosensitive film pattern 117 is formed in a shape in which one side of the data pad wiring 122 is opened to correspond to a predetermined portion of the data pad wiring 122, and a protective film formed of the photosensitive film pattern at a predetermined portion. The line width of the transparent conductive film pattern formed in the hole (see 125 in FIG. 14B) is made larger than the corresponding width of the automatic inspection probe in contact with the upper portion.

As shown in FIG. 14B, the protective film 116, the data pad wiring 122, the n + layer 114b, the amorphous silicon layer 114a, and the gate insulating film 115 are removed by using the photoresist pattern 117 as a mask. The protective film hole 125 is formed. Since the protective film hole 125 is formed by the photoresist pattern 117, the protective film hole 125 opens one side of the data pad wiring 122 at a predetermined portion of the data pad wiring 122 as shown in FIG. 13. As a result, one side of the data pad wiring 122 is removed to form a thicker width, and the other portion is formed inside the data pad wiring 122.

As illustrated in FIG. 14C, a transparent conductive layer 113 is deposited on the photoresist layer pattern 117 including the passivation layer hole 125. In this case, the photosensitive film pattern 117 is not left in the protective film hole 125, and the transparent conductive film 113 is in direct contact with the sidewall of the protective film 116 and the inside thereof.

As shown in FIG. 14D, the photoresist pattern 117 remaining on the passivation layer 116 is lifted off and removed together with the transparent conductive layer 113 under the photoresist layer pattern 117. In this case, since the photoresist pattern 117 remains in an area except the passivation hole 125 and does not remain inside the passivation hole 125, after the lift-off process, the transparent conductive layer 113 may pass through the passivation layer hole. It is defined as the transparent conductive film pattern 113a remaining only inside and at the sidewalls 125.

In the pad part of the liquid crystal display according to the first exemplary embodiment of the present invention, the protective film hole 125 is formed to pass through one side of the data pad wiring 122 to form a transparent conductive film pattern therein. After forming 113a), the automatic inspection probe 130 is corresponded to the upper portion to secure a stable contact area larger than the corresponding width of the automatic inspection probe 130 (width of the automatic inspection probe + left and right movement width). An inspection process can be expected.

Second Embodiment

FIG. 15 is a plan view illustrating a data pad part of a liquid crystal display according to a second exemplary embodiment of the present invention, and FIG. 16 is a cross-sectional view taken along the line VV ′ of FIG. 15.

15 and 16, the data pad portion of the liquid crystal display according to the second exemplary embodiment covers the plurality of data pad wires 122 and the plurality of data pad wires spaced at equal intervals on a substrate. The passivation layer 116 and the data pad line 122 so as to pass through both sides of the data pad line 122 to be spaced apart from each other at a predetermined portion of the data pad line 122. The first and second passivation layer holes 135a and 135b formed by removing the first and second passivation layer holes 135a and 135b, the inner sidewalls of the first and second passivation layer holes 135a and 135b, and sidewalls thereof, and the first and second passivation layer holes 135a and 135b. It includes a transparent conductive film pattern 113a formed to pass through.

As described above, in the formed data pad part, the data pad wiring 122 and the transparent conductive film pattern 113a between the first and second passivation film holes are in side contact.

In the automatic inspection, the automatic inspection probe 130 corresponds to the upper portion of the data pad wiring 122. Even if the corresponding width of the automatic inspection probe 130 is 30 μm, the transparent conductive film pattern 113a Since a line width is formed at a predetermined portion passing through both sides of the data pad line 122, a contact area of the automatic inspection probe 130 is formed to have a larger width than at least the data pad line 122. For example, when the data pad wiring 122 is 36 μm, the automatic test probe 130 may be stable with the automatic test probe 130 even if the automatic test probe 130 is positioned above the data pad wire 122. Contact with.

A portion where the first and second passivation layer holes 135a 135b are formed is a predetermined portion with respect to the data pad line 122. As shown in FIG. 15, the passivation layer hole is formed in the data pad wiring 122 in other portions.

Here, the data pad wiring 122 remaining between the first and second passivation layer holes 135a and 135b is in side contact with the transparent conductive layer pattern 113a at both sides thereof.

Hereinafter, a method of forming a data pad portion of a liquid crystal display according to a second exemplary embodiment of the present invention will be described with reference to the drawings. In this case, the pixel portion of the liquid crystal display device of the present invention has the same structure as the liquid crystal display device manufactured by the three mask process (see FIG. 6).

17A to 17D are process flowcharts of a process performed along the line VV ′ in FIG. 15.

As illustrated in FIG. 17A, the gate insulating film 115, the same layer as the amorphous silicon layer 114a), the n + layer (the same layer as the 114b), and the metal material layer 122 and the same layer are sequentially deposited on the entire surface of the substrate 100. do.

Subsequently, at the same time as the data wiring forming process of the pixel portion, the metal material layer 122 and the n + layer 114b and the amorphous silicon layer 114a are removed to selectively remove the data pad wiring 122. To form. In this case, the n + layer 114b and the amorphous silicon layer 114a below the data pad wiring 122 are also patterned in the same width.

Subsequently, the passivation layer 116 is deposited on the entire surface of the metal material layer 122.

Subsequently, after the photoresist film is coated on the passivation layer 116, the photoresist pattern 127 is formed by exposing and developing the photoresist film. In this case, the photoresist layer patterns 127 may be spaced apart from each other by a predetermined interval in correspondence with the data pad lines 122 to open one side and the other side of the data pad line 122. To define it.

As shown in FIG. 17B, the protective film 116, the data pad wiring 122, the n + layer 114b, the amorphous silicon layer 114a, and the gate insulating film 115 are removed by using the photoresist pattern 127 as a mask. Thus, the first and second passivation layer holes 135a and 135b are formed. As shown in FIG. 15, the first and second passivation layer holes 135a and 135b are spaced apart from each other at predetermined portions of the data pad line 122 by one side and the data pad line of one side and the other side of the data pad line 122, respectively. It is formed so that 122 is removed. In a portion other than a predetermined portion of the data pad line 122, a protective film hole is formed in the data pad line 122.

As illustrated in FIG. 17C, a transparent conductive film 113 and the same layer are deposited on the entire upper surface of the photoresist pattern 127 including the first and second passivation layer holes 135a and 135b.

As shown in FIG. 17D, the photoresist pattern 127 remaining on the upper portion of the passivation layer 116 may be lifted off to strip the transparent conductive layer 113 together with the photoresist layer pattern 127. . In this case, the photoresist layer pattern 127 remains in regions except for the first and second passivation layer holes 135a and 135b and is not left inside the first and second passivation layer holes 135a and 135b. The conductive layer 113 remains between the inner and sidewalls of the first and second passivation layer holes 135a and 135b and between the first and second passivation layer holes 135a and 135b to form a transparent conductive layer pattern 113a. Is defined.

The pad portion of the liquid crystal display according to the second exemplary embodiment of the present invention formed by the formation method as described above passes through one side and the other side of the data pad line 122 through the first and second passivation layer holes 135a and 135b. In the case where the transparent conductive film pattern 113a is formed to pass through the first and second protective film holes 135a and 135b to correspond to the automatic inspection probe 130 on the transparent conductive film pattern 113a, at least a data pad Since the automatic inspection probe 130 corresponds to the transparent conductive film pattern 113a having a wider line width than the wire line width, a stable contact process may be expected by securing a wide contact area.

As described above, in the pad portion and the method of forming the liquid crystal display of the present invention, the line width of the transparent conductive film pattern 113a is determined by the width of the protective film hole during the three mask process, so that the protective film hole passes through one side of the pad wiring. Or two passivation layers having holes passing through one side and the other side of the data pad wiring, respectively, to increase the width of the passivation hole, thereby forming a transparent conductive pattern formed on the inside of the passivation hole and on the sidewalls. It is to be able to cope effortlessly in large area.

In the above-described embodiment, only the data pad portion has been described. However, the embodiment may be expanded and changed to a gate pad portion in which an automatic inspection probe corresponds to a portion where a contact between the gate pad wiring and the transparent conductive layer pattern is made.

As described above, the pad part of the liquid crystal display of the present invention and a method of forming the same have the following effects.

First, the width of the protective film hole formed on the pad wiring is formed in a shape in which one side of the pad wiring is opened at a predetermined portion, or two protective film holes spaced apart from each other are formed in a shape that opens to one side and the other side of the pad wiring. The formed transparent conductive film pattern can be formed with a wider line width.

Second, after forming the thin film transistor array substrate, it is possible to secure the pad resistance during an electrical test (MPS: Mass Production System), thereby enabling a more stable test.

Third, the transparent conductive film pattern is formed with a wider line width, so that the contact area with the automatic inspection probe contacted from the upper side can be increased, and the automatic inspection can be made stable.                     

Fourth, defect detection is possible in the state of the liquid crystal panel (after completion of the cell process) before the completion of the liquid crystal display device.

Claims (21)

A plurality of pad wires spaced at equal intervals on the substrate; A protective film formed to cover the plurality of pad wires; A protective film hole formed by removing the protective film and the pad wiring to a width larger than a corresponding width of the automatic inspection probe so that only one side of the pad wiring remains on a side at a predetermined portion of each pad wiring; And And a transparent conductive layer pattern formed on the sidewalls of the protective layer hole. The method of claim 1, The passivation hole is formed at a predetermined portion of each pad line, the width of which is larger than a corresponding width of the automatic inspection probe, and at other portions, the passivation hole is formed inside the pad line. The method of claim 1, The corresponding width of the automatic inspection probe is a pad portion of the liquid crystal display device, characterized in that the width and the left and right shifting width of the automatic inspection probe is considered. The method of claim 1, And a side contact between one side of the pad line and the transparent conductive layer pattern in the passivation layer hole. The method of claim 1, And the pad line is a data pad line. The method of claim 5, A pad portion of the liquid crystal display device, wherein a semiconductor layer is further formed under the data pad line with the same width. The method of claim 1, And the pad wiring is a gate pad wiring. A plurality of pad wires spaced at equal intervals on the substrate; A protective film formed to cover the plurality of pad wires; First and second passivation layer holes formed by removing the passivation layer and the pad line to be spaced apart from each other at a predetermined portion of the pad line to pass through both sides of the pad line; And And a transparent conductive layer pattern formed to pass through the first and second passivation layer holes and the sidewalls thereof and between the first and second passivation layers. The method of claim 8, The pad portion of the liquid crystal display device, wherein the pad line between the first and second passivation layer holes and the transparent conductive layer pattern are in side contact. The method of claim 8, And the pad line is a data pad line. The method of claim 10, A pad portion of the liquid crystal display device, wherein a semiconductor layer is further formed under the data pad line with the same width. The method of claim 8, And the pad wiring is a gate pad wiring. Forming a plurality of pad lines spaced at equal intervals on the substrate; Forming a protective film to cover the plurality of pad wires; Applying a photoresist to the entire surface of the protective film; Exposing and developing the photoresist to form a photoresist pattern by opening one side of each pad line with a width larger than a corresponding width of the automatic inspection probe; Forming a protective film hole by removing the protective film and the pad wiring using the photosensitive film pattern as a mask; Depositing a transparent conductive film on the entire surface of the substrate including the photoresist pattern; And And forming a transparent conductive layer pattern on the sidewalls of the protective film hole and on the sidewalls by lifting off the photoresist pattern and the transparent conductive layer thereon. . The method of claim 13, The corresponding width of the automatic inspection probe is a width of the automatic inspection probe and the left and right shifting margin width are considered. The method of claim 13, And the pad line is a data pad line. The method of claim 15, And depositing a semiconductor layer under the data pad wiring material to form a semiconductor layer with the same width as that of the data pad wiring when forming the data pad wiring. . The method of claim 13, And forming the pad portion of the pad portion of the liquid crystal display device. Forming a plurality of pad lines spaced at equal intervals on the substrate; Forming a protective film to cover the plurality of pad wires; Applying a photoresist to the entire surface of the protective film; Exposing and developing the photoresist to form photoresist patterns defining first and second passivation layer holes spaced apart from each other by a predetermined interval to open one side and the other side of each pad line; Forming the first and second passivation layer holes by removing the passivation layer and the pad wiring using the photosensitive layer pattern as a mask; Depositing a transparent conductive film on the entire surface of the substrate including the photoresist pattern; And Forming a pad portion of the liquid crystal display device, comprising: lifting-off the photosensitive film pattern and the transparent conductive film thereon to form a transparent conductive film pattern in the protective film hole and on the sidewalls of the protective film hole. Way. The method of claim 18, And the pad line is a data pad line. The method of claim 19, And depositing a semiconductor layer under the data pad wiring material to form a semiconductor layer with the same width as that of the data pad wiring when forming the data pad wiring. . The method of claim 18, And forming the pad portion of the pad portion of the liquid crystal display device.

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