KR100670044B1 - Liquid Crystal Display and Manufacturing Method Thereof - Google Patents

Abstract

According to the present invention, a gate wiring including a gate line, a gate electrode, and a gate pad is formed on a substrate, and then a gate insulating film, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and the contact layer and the semiconductor layer are etched to form a contact layer pattern and a semiconductor pattern. To form. Subsequently, the conductor layer is deposited and etched to form data lines, source and drain electrodes, data pads, and sustain electrode lines. Next, a color filter is formed in the pixel area defined by the intersection of the gate line and the data line. The color filter is composed of three colors of red, green, and blue, and forms one color in each pixel area and is alternately formed. Next, a passivation layer is formed to cover the color filter, and the portion corresponding to the pixel area thereon has a form in which the slope increases toward the data line from the center of the pixel area and exposes the gate pad and the data pad, the drain electrode, and the storage electrode line. An organic insulating film having a sphere is formed. A pixel electrode, an auxiliary gate pad, and an auxiliary data pad are formed of a transparent conductive material on the organic insulating layer. In the present invention, the projections are smoothly formed by forming the projections with the organic insulating film, and since the organic insulating film is formed on the color filter, it is possible to prevent the color filter from being damaged. In addition, the aperture ratio can be high.

 Projection, wide viewing angle, color filter, organic insulating film, high opening ratio

Description

Liquid crystal display and a manufacturing method thereof

1 is a layout view of a thin film transistor substrate for a liquid crystal display device manufactured according to a first embodiment of the present invention.

2A and 2B are cross-sectional views taken along the lines IIa-IIa 'and IIb-IIb' in FIG. 1, respectively.

3 is a layout view of a thin film transistor substrate in a first step of manufacturing according to an embodiment of the present invention,

4A and 4B are cross-sectional views taken along line IVa-IVa ′ and IVb-IVb ′ in FIG. 3, respectively.

FIG. 5 is a layout view of a thin film transistor substrate at a next stage of FIGS. 4A and 4B;

6A and 6B are cross-sectional views taken along lines VIa-VIa ′ and VIb-VIb ′ in FIG. 5, respectively.

FIG. 7 is a layout view of a thin film transistor substrate in FIGS. 6A and 6B.

8A and 8B are cross-sectional views taken along the lines 'a-'a' and 'b-'b' in FIG. 7, respectively.

FIG. 9 is a layout view of a thin film transistor substrate at a next stage of FIGS. 8A and 8B;

10A and 10B are cross-sectional views taken along the lines 'a-'a' and 'b -'- b' in FIG. 9, respectively.

11A and 11B are cross-sectional views taken along line Xa-Xa 'and XB-Xb' in FIG. 9, respectively, and are cross-sectional views at the next steps of FIGS. 10A and 10B;

12 is a layout view of a thin film transistor substrate at a next step of FIGS. 11A and 11B;

13A and 13B are cross-sectional views taken along lines XIIIa-XIIIa 'and XIIIb-XIIIb' in FIG. 12, respectively.

14 is a layout view of a thin film transistor substrate for a liquid crystal display device manufactured according to a second embodiment of the present invention.

15A and 15B are cross-sectional views taken along the lines XVa-XVa 'and XVb-XVb' in FIG. 14, respectively.

16 is a layout view of a thin film transistor substrate in a first step of manufacturing according to the second embodiment of the present invention,

17A and 17B are cross-sectional views taken along the lines 'a-'a' and 'b-'b' of FIG. 16, respectively;

FIG. 18 is a layout view of a thin film transistor substrate in FIGS. 17A and 17B next step;

19A and 19B are cross-sectional views taken along the lines 'a-'a' and 'b -'- b' in FIG. 18, respectively;

20 is a layout view of a thin film transistor substrate at a next stage of FIGS. 19A and 19B;

21A and 21B are cross-sectional views taken along the line XXXa-XXXI 'and XXXB-XIb' of FIG. 20, respectively;

22A and 22B are cross-sectional views taken along the line XIa-XIa 'and XIb-XIB' of FIG. 20, respectively, and are cross-sectional views at the next steps of FIGS. 21A and 21B,

FIG. 23 is a layout view of a thin film transistor substrate at a next step of FIGS. 22A and 22B;

24A and 24B are cross-sectional views taken along lines XIVa-XIVa 'and XIVb-XIVb' in FIG. 23, respectively.

25 is a layout view of an upper substrate and a lower substrate of the liquid crystal display according to the present invention.

The present invention relates to a liquid crystal display device and a manufacturing method thereof.

In general, a liquid crystal display device injects a liquid crystal material between an upper substrate on which a common electrode, a color filter, and the like are formed, and a lower substrate on which a thin film transistor and a pixel electrode are formed. By applying a different potential to form an electric field to change the arrangement of the liquid crystal molecules and thereby to control the light transmittance through which the image is expressed.

However, the liquid crystal display has a disadvantage in that the viewing angle is narrow. In order to overcome this disadvantage, various methods for widening the viewing angle have been proposed. Among them, a patterned vertical alignment (PVA) method or protrusions are formed to align the liquid crystal molecules vertically with respect to the upper and lower substrates and to form an opening pattern in the pixel electrode and the common electrode. An example is a multi-domain vertical alignment (MVA) method.

However, in the case of the PVA method, a photolithography process of forming an opening pattern must be added to the common electrode formed on the color filter of the upper substrate, and the lower color filter is damaged during ITO etching, which is mainly used for the common electrode.

On the other hand, in the MVA method, a process must be added when an organic insulating film is used to form the protrusions, and when the protrusions are formed of the nitride film, the thickness of the nitride film is thin so that the protrusions are not properly formed.

In addition, the PVA method and the MVA method have a lower opening ratio due to the opening pattern and protrusion formation.

An object of the present invention is to prevent the color filter of the liquid crystal display from being damaged.

Another object of the present invention is to not increase the number of steps while forming a projection.

Another object of the present invention is to improve the aperture ratio of a liquid crystal display device.

In order to achieve this problem, the present invention forms a color filter on the lower substrate.

In the liquid crystal display according to the present invention, a gate wiring including a plurality of gate lines and gate electrodes connected to the gate lines and a gate pad is formed on a first substrate, and the first insulating layer covers the gate wiring. A semiconductor layer is formed on the first insulating layer, and is connected to the data line, the data line, and the source electrode, the drain electrode connected to the semiconductor layer and separated from the data line and the source electrode, and one end of the data line. A data line including a data pad located thereon is formed on the first insulating film. The second insulating film formed thereon covers the data wiring and the semiconductor layer. Subsequently, a color filter is formed on the second insulating film, a third insulating film having a protrusion shape is formed thereon, and a pixel electrode connected to the drain electrode is formed on the third insulating film.

The third insulating film may be formed of an organic insulating material, and the third insulating film may be formed of a photosensitive material.

In this case, the pixel electrode may be formed to overlap the gate line and the data line.

In addition, the data line may be formed of a double layer of aluminum and chromium or aluminum-neodymium and chromium.

The liquid crystal display according to the present invention may further include a storage electrode formed on the first insulating layer and overlapping the gate line, wherein the storage electrode is connected to the pixel electrode.

In the present invention, an auxiliary gate pad and an auxiliary data pad may be further formed on the third insulating layer to cover the gate pad and the data pad, respectively.

In the liquid crystal display including the substrate, a first alignment layer covering the pixel electrode is formed on the pixel electrode on the first substrate, and the transparent electrode is formed on the inner surface of the second substrate facing the first substrate. The second alignment layer may be sequentially formed, and a black spacer may be formed between the first alignment layer and the second alignment layer, and the second substrate may be formed to a thickness of 5 mm or less.

A method of manufacturing a liquid crystal display device according to the present invention is as follows. A gate line including a plurality of gate lines and gate electrodes connected to the gate lines and a gate pad is formed on the substrate. The first insulating film, the semiconductor layer, and the ohmic contact layer are sequentially deposited, and the ohmic contact layer and the semiconductor layer are patterned. Subsequently, the conductor layer is deposited and then etched to form a data line including a data line, a source electrode, a drain electrode, and a data pad. Next, the ohmic contact layer which is not covered by the data wiring is removed, and a second insulating film is deposited. Next, a color filter is formed on the second insulating film and an insulating protrusion is formed on the color filter. Subsequently, the color filter and the second insulating layer are etched to form first and second contact holes exposing the drain electrode and the data pad, respectively, followed by etching the first insulating film to form a third contact hole exposing the gate pad. . Next, a pixel electrode is formed on the insulating protrusion.

Here, the formation of the insulating protrusions is performed by depositing a third insulating film, applying a photosensitive film thereon, and then exposing the photosensitive film through a mask having a different transmittance depending on the position. Next, the photoresist may be developed, and the third insulating film may be etched using the photoresist as a mask to form an insulation protrusion.

Insulating projections are preferably formed of an organic insulating material and may be formed of a photosensitive material.

When the insulating protrusions are formed of the photosensitive material, the insulating protrusions may be formed by applying the photosensitive film, exposing the photosensitive film through a mask having a different transmittance depending on the position, and then developing the photosensitive film.

The liquid crystal display device may be manufactured by other methods. A gate line including a plurality of gate lines and gate electrodes connected to the gate lines and a gate pad is formed on the substrate. Subsequently, the first insulating layer, the semiconductor layer, the ohmic contact layer, and the conductor layer are deposited in sequence, and then the conductor layer, the ohmic contact layer, and the semiconductor layer are patterned in one photolithography process to form a data line, a source electrode, a drain electrode, and a data pad. Forming a contact layer pattern having the same shape as the data line and the data line including the same and forming a semiconductor pattern different from the data line and the contact layer pattern. Next, after forming a second insulating film and a color filter thereon, insulating protrusions are formed on the color filter. Subsequently, the color filter and the second insulating layer are etched to form first and second contact holes exposing the drain electrode and the data pad, respectively, followed by etching the first insulating film to form a third contact hole exposing the gate pad. . Next, a pixel electrode is formed on the insulating protrusion.

Here, the formation of the insulating protrusions is performed by depositing a third insulating film, applying a photosensitive film thereon, and then exposing the photosensitive film through a mask having a different transmittance depending on the position. Next, the photoresist may be developed, and the third insulating film may be etched using the photoresist as a mask to form an insulation protrusion.

Insulating projections are preferably formed of an organic insulating material and may be formed of a photosensitive material.

When the insulating protrusions are formed of the photosensitive material, the insulating protrusions may be formed by applying the photosensitive film, exposing the photosensitive film through a mask having a different transmittance depending on the position, and then developing the photosensitive film.

In such a method of manufacturing a liquid crystal display device, it is preferable to use a mask having a different transmittance depending on the portion in the patterning step of the conductor layer, the ohmic contact layer, and the semiconductor layer.

In the thin film transistor substrate for a liquid crystal display device, a color filter is formed after the data line is formed and a pixel electrode is subsequently formed, thereby preventing the data line from being corroded when the pixel electrode is formed. In addition, the viewing angle of the liquid crystal display can be widened by forming protrusions on the organic insulating film to change the arrangement state of the liquid crystal molecules. In addition, since the color filter is formed on the lower substrate, the width of the black matrix of the upper substrate can be narrowed, thereby increasing the aperture ratio.

Next, a liquid crystal display and a manufacturing method thereof according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a layout view of a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention, and FIGS. 2A and 2B are cross-sectional views taken along the lines IIa-IIa 'and IIb-IIb', respectively, in FIG. 1. to be.

First, a plurality of gate lines 21 extending in the horizontal direction on the substrate 10 and the gate electrode 22 which is a branch of the gate line 21 and one end of the gate line 21 are positioned to scan signals from the outside. A gate wiring including a gate pad 23 to be applied is formed. The gate wirings 21, 22, and 23 may be formed as a single layer, but may be formed as a double layer or a triple layer. In the case of forming more than two layers, it is preferable that one layer is made of a material having low resistance and the other layer is made of a material having good contact properties with the other material.

The gate insulating film 30 is formed on the gate wirings 21, 22, and 23 to cover the gate wirings 21, 22, and 23.

A semiconductor layer 40 made of a material such as amorphous silicon is formed on the gate insulating layer 30 on the gate insulating layer 30, and on the gate insulating layer 30, a resistance made of amorphous silicon doped with a high concentration of n-type impurities such as phosphorus (P) and the like. Contact layers 51 and 52 are formed. The ohmic contacts 51 and 52 are formed in two parts separated about the gate electrode 22.

Data wirings are formed on the gate insulating film 30 and the ohmic contacts 51 and 52. The data line extends in the vertical direction and intersects the data line 61 crossing the gate line 21, the source electrode 62 extending from the data line 61, the drain electrode 63 separated from the data line 61, and the data. It is formed at one end of the line 61 and includes a data pad 64 for receiving an image signal from the outside. A portion of the source electrode 62 and the drain electrode 63 are in contact with two portions 51 and 52 of the ohmic contact layer, respectively. The data lines 61, 62, 63, and 64 may also be formed in a single layer like the gate lines 21, 22, and 23, and may also be formed in a double layer or a triple layer. The storage electrode 65 is formed on the gate line 21 between the adjacent data lines 61 and made of the same material as the data lines 61, 62, 63, and 64. Connected to form a storage capacitor together with the gate line 21.

On the data lines 61, 62, 63, and 64, the sustain electrode 65, and the exposed semiconductor layer 40, a protective film 70 made of silicon nitride is formed to cover them.

The color filter 71 including three colors of red (R), green (G), and blue (B) is formed in the pixel area defined by the gate line 21 and the data line 61 crossing the passivation layer 70. Are formed respectively. The edge of the color filter 71 overlaps the data line 61 and overlaps the gate line 21 and the storage electrode 65 of the front end.

An organic insulating layer 80 is formed on the color filter 71 and covers the organic insulating layer 80, and has a protrusion shape that decreases toward the data line 61 in the center of the pixel area. In addition, the organic insulating layer 80 includes the gate pad 23, the data pad 64, the drain electrode 63, and the storage electrode 65 together with the color filter 71, the passivation layer 70, or the gate insulating layer 30. Contact holes 81, 82, 83, 84, and 85 are formed.

A pixel electrode 91 made of a transparent conductive material such as ITO, an auxiliary gate pad 92, and an auxiliary data pad 93 are formed on the organic insulating layer 80. The edge of the pixel electrode 91 overlaps the data line 61 and is connected to the storage electrode 65 through the contact holes 84 and 85. In addition, the pixel electrode 91 is also connected to the drain electrode 63 through the contact hole 83. The auxiliary gate pad 92 and the auxiliary data pad 93 connected to an external driving circuit are formed on the gate pad 23 and the data pad 64, respectively.

A method of manufacturing such a liquid crystal display will be described in detail with reference to FIGS. 3 to 14B and FIGS. 1 to 2B.

First, as shown in FIGS. 3 to 4B, aluminum (Al) or aluminum alloy (Al alloy), molybdenum (Mo), or molybdenum-tungsten (MoW) alloy, chromium (Cr), and tantalum (Ta) are formed on the substrate 10. The gate wirings 21, 22, and 23 are formed of a material such as). The width of the gate line 21 is about 15 μm to 20 μm wider than the conventional 6 μm to 7 μm to serve as a light blocking film.

As mentioned above, the gate wirings 21, 22, and 23 may be formed of a double layer or a triple layer. In this case, when the pixel electrode 91 is formed of ITO, a material having good contact properties with ITO may be chromium (Cr). , Molybdenum (Mo), titanium (Ti), tantalum (Ta) and the like, and thus may be formed as a double layer of chromium and aluminum (or an aluminum alloy) or a double layer of aluminum and molybdenum.

Next, as shown in FIGS. 5 to 6B, the gate insulating layer 30, the semiconductor layer 40, and the ohmic contact layer 50 are successively deposited, and then the ohmic contact layer 50 except for the upper portion of the gate electrode 22. And the semiconductor layer 40 are removed.

Next, as illustrated in FIGS. 7 to 8B, the conductive material is deposited and etched to form the data lines 61, 62, 63, and 64 and the storage electrode 65. The data wires 61, 62, 63, and 64 and the sustain electrode 65 may be formed of a chemically stable conductive material such as chromium or molybdenum, and a double layer of aluminum and chromium or aluminum-neodynium and chromium or aluminum and molybdenum. It can also be formed. In the present invention, since the color filter 71 and the organic insulating film 80 are formed thick on the data wirings 61, 62, 63, and 64, even if aluminum is used as the data wirings 61, 62, 63, and 64, the pixel electrode ( 91) It does not damage the etchant during formation. At this time, the width of the data line 61 is formed to 15μm to 20μm to serve as a light blocking film.

Subsequently, the ohmic contact layer 50 which is not covered by the data wires 61, 62, 63, and 64 and the storage electrode 65 is etched to separate the two portions 51 and 52, and at the same time, the semiconductor layer 40 below it. )

Next, the passivation layer 70 is formed on the data lines 61, 62, 63, and 64 and the sustain electrode 65 using silicon nitride or the like.

Next, as illustrated in FIGS. 9 to 10B, the color filter 71 is formed on the passivation layer 70 in the pixel region defined by the gate line 21 and the data line 61 intersecting each other. The color filter 71 is formed of three colors of red (R), green (G), and blue (B) and is formed so that one color enters one pixel area.

Subsequently, as shown in FIGS. 11A and 11B, the organic insulating layer 80 is formed to a thickness of about 2 to 4 μm, and then patterned to form protrusions in the pixel region, the gate pad 23 and the data pad 64, and The portions corresponding to the contact holes 81, 82, 83, 84, and 85 exposing the drain electrode 63 and the storage electrode 65 allow the organic insulating layer 80 to be removed. The organic insulating layer 80 may be formed of a photosensitive organic material. In this case, the organic insulating layer 80 may be patterned only by an exposure and development process through a mask. In this case, when the exposure is performed, the shape of the projection is formed so that the height of the projection becomes lower toward the data line 61 from the center of the pixel region by using a mask in which a film having a different slit or light transmittance is formed.

Next, as shown in FIGS. 12 to 13B, the color filter 71 and the passivation layer 70 are etched using the organic insulating layer 80 as a mask to form the drain electrode 63, the data pad 64, and the storage electrode 65. After forming contact holes 83, 82, 84, and 85, respectively, the gate insulating film 30 is etched to form contact holes 81 exposing the gate pads 23.

Subsequently, as illustrated in FIGS. 1 and 2B, a transparent conductive material such as ITO is deposited and then etched to form the pixel electrode 91, the auxiliary gate pad 92, and the auxiliary data pad 93. In this case, the pixel electrode 91 may be formed to overlap the data line 61 to increase the aperture ratio, and even when the pixel electrode 91 and the data line 61 overlap, the organic insulating layer 80 is thick. There is little generation of parasitic capacitance between 91 and the data line 61.

In the present invention, since the color filter 71 is formed on the lower substrate, the width of the gate line 21 or the data line 61 is formed to act as a light blocking film, and the width of the wiring becomes wider. Since the width of the black matrix, which is a light blocking film of the upper substrate, can be narrowed, the aperture ratio can be increased.

Although the present invention is based on a five-sheet mask process, a four-sheet mask for forming the semiconductor layer 41, the ohmic contact layers 53, 54, and the data lines 61, 62, 63, and 64 in one photolithography process It can also be applied to processes.

Next, a thin film transistor substrate for a liquid crystal display device and a method of manufacturing the same according to the second embodiment of the present invention will be described in detail with reference to FIGS. 14 to 24b.

First, FIG. 14 is a layout view of a thin film transistor substrate for a liquid crystal display according to a second exemplary embodiment of the present invention, and FIGS. 15A and 15B are cut along the lines XVa-XVa 'and XVb-XVb' in FIG. 14, respectively. One cross section.

As shown in Figs. 14 to 15B, the second embodiment of the present invention is formed in almost the same manner as the first embodiment, but the ohmic contacts 53, 54, and 55 have data lines 61, 62, 63, and 64. And the sustain electrode 65, and the semiconductor layers 41 and 45 also have resistive contact layers 53, 54 and 55 and data wirings 61, 62, 63 and 64 except for channel portions. And the sustain electrode 65.

A method of manufacturing the liquid crystal display will be described in detail with reference to FIGS. 16 to 24b and the foregoing FIGS. 14 to 15b.

First, as shown in FIGS. 16 to 17B, gate wirings 21, 22, and 23 are formed on a substrate 10 using a conductor layer such as chromium (Cr) and aluminum-neodynium (Al-Nd or aluminum). .

Next, as shown in FIGS. 18 to 19B, the gate insulating film 30, the semiconductor layers 41 and 45, and the ohmic contact layers 53, 54, and 55 are sequentially deposited, and a conductive material is deposited. The data wirings 61, 62, 63, and 64, the storage electrode 65, and the ohmic contact layer 53, 54, in a single photolithography process using a mask having a film having a different slit or transmittance in a portion corresponding to the channel. 55 and semiconductor layers 41 and 45 are formed.

Next, as shown in FIGS. 20 to 21B, the protective film 70 is deposited and the color filter 71 is formed in the pixel region.

Subsequently, as shown in FIGS. 22A and 22B, the organic insulating layer 80 is coated and then patterned to form protrusions, and portions corresponding to the contact holes 81, 82, 83, 84, and 85 are formed of the organic insulating layer 80. To be removed.

Next, as illustrated in FIGS. 23 to 24B, the color filter 71 and the passivation layer 70 are etched using the organic insulating layer 80 as a mask to form the drain electrode 63, the data pad 63, and the storage electrode 65. After forming contact holes 83, 82, 84, and 85, respectively, the gate insulating film 30 is etched to form contact holes 81 exposing the gate pads 23.

Next, as illustrated in FIGS. 14 to 15B, the pixel electrode 91 is formed of a transparent conductive material such as ITO. The pixel electrode 91 overlaps the data line 61 and is formed to overlap the gate line 21 and the storage electrode 65 of the previous stage.

In the liquid crystal display using the thin film transistor substrate, when the photosensitive black spacer is formed on the thin film transistor of the thin film transistor substrate, the black matrix may not be formed on the upper substrate.

FIG. 25 illustrates a top substrate and a bottom substrate layout of the liquid crystal display.

As shown in FIG. 25, the lower substrate is formed in the same manner as in the first embodiment of the present invention, and a vertical alignment layer 110 is formed thereon. The photosensitive black spacer 300 is formed on the thin film transistor on the vertical alignment layer 110 to maintain a distance from the upper substrate and serve as a light blocking layer. In the upper substrate facing the lower substrate, a common electrode 210 made of a transparent conductive material such as ITO is formed on the inner surface of the insulating substrate 200, and a vertical alignment layer 220 is formed thereon.

As such, since only the common electrode 210 and the alignment layer 220 need to be formed on the upper substrate, the substrate 200 of the upper substrate may be formed to have a thickness of 5 mm or less and a low price. Therefore, manufacturing cost can be reduced.

 According to the present invention, an organic insulating layer may be formed on the color filter to prevent the color filter from being damaged when the electrode is formed, and the protrusion may be formed without the addition of a process. In addition, the pixel electrode on the organic insulating layer may be formed to overlap the data line, and the color filter may be formed on the lower substrate to narrow the black matrix width of the upper substrate, thereby increasing the aperture ratio. In addition, the color filter and the organic insulating layer may prevent the data wiring from being damaged when the pixel electrode is formed.

Claims (20)

First substrate, A gate wiring formed on the first substrate and including a plurality of gate lines and gate electrodes and gate pads connected to the gate lines; A first insulating film covering the gate wiring, A semiconductor layer formed on the first insulating film; A data line including a data line formed on the first insulating layer, a source electrode connected to the data line, a drain electrode separated from the source electrode, and a data pad positioned at one end of the data line; A second insulating film covering the data line and the semiconductor layer, A color filter formed on the second insulating film, A third insulating film formed on the color filter and including a protrusion positioned to correspond to the pixel electrode; A pixel electrode formed on the third insulating layer and connected to the drain electrode Liquid crystal display comprising a. In claim 1, The third insulating layer is a liquid crystal display device made of an organic insulating material. In claim 2, The third insulating layer is a liquid crystal display device made of a photosensitive material. The method of claim 2 or 3, And the pixel electrode overlaps the gate line and the data line. In claim 1, The data line includes a double layer of aluminum and chromium or aluminum-neodynium and chromium. In claim 1, And a storage electrode formed on the first insulating layer and overlapping the gate line, wherein the storage electrode is connected to the pixel electrode. In claim 1, And an auxiliary gate pad and an auxiliary data pad covering the gate pad and the data pad. In claim 1, A first alignment layer covering the pixel electrode, A second substrate facing the first substrate, A transparent electrode formed on an inner surface of the second substrate, A second alignment layer covering the transparent electrode, Black spacers formed between the first alignment layer and the second alignment layer Liquid crystal display further comprising. In claim 8, The second substrate has a thickness of 5 mm or less. Forming a gate wiring on the substrate, the gate wiring including a plurality of gate lines and gate electrodes connected to the gate lines, and a gate pad; Forming a first insulating film covering the gate wiring; Forming a semiconductor layer on the first insulating layer; Stacking and patterning a conductor layer on the first insulating film and the semiconductor layer to form a data line including a data line, a source electrode, a drain electrode, and a data pad; Depositing a second insulating film, Forming a color filter on the second insulating layer; Forming an insulating protrusion on the color filter; Etching the color filter and the second insulating layer to form a first contact hole and a second contact hole respectively exposing the drain electrode and the data pad, and subsequently etching the exposed first insulating film to expose the gate pad. 3 forming a contact, Forming a pixel electrode on the insulating protrusion to be connected to the drain electrode through the first contact hole; Method of manufacturing a liquid crystal display comprising a. In claim 10, The insulating protrusion forming step, Depositing a third insulating film, Applying a photosensitive film on the third insulating film, Exposing the photosensitive film through a mask having a different transmittance depending on position; Developing the photosensitive film; Etching the third insulating layer using the photosensitive layer as a mask to form the insulating protrusions Method of manufacturing a liquid crystal display comprising a. In claim 10, And the insulating protrusions are made of an organic insulating material. In claim 12, And the insulating protrusions are made of a photosensitive material. In claim 13, The insulating protrusion forming step, Applying a photoresist film, Exposing the photosensitive film through a mask having a different transmittance depending on a position; Developing the photoresist to form the insulating protrusions; Method of manufacturing a liquid crystal display comprising a. Forming a gate wiring on the substrate, the gate wiring including a plurality of gate lines and gate electrodes connected to the gate lines, and a gate pad; Sequentially depositing a first insulating film, a semiconductor layer, an ohmic contact layer, and a conductor layer, Patterning the conductor layer, the ohmic contact layer, and the semiconductor layer in a single photolithography process to form a data line including a data line, a source electrode, a drain electrode, and a data pad and a contact layer pattern having the same shape as the data line; Simultaneously forming a semiconductor pattern having a different shape from that of the data wiring and contact layer pattern; Depositing a second insulating film, Forming a color filter on the second insulating layer; Forming an insulating protrusion on the color filter; Etching the color filter and the second insulating layer to form a first contact hole and a second contact hole respectively exposing the drain electrode and the data pad, and subsequently etching the exposed first insulating film to expose the gate pad. 3 forming a contact, Forming a pixel electrode on the insulating protrusion to be connected to the drain electrode through the first contact hole; Method of manufacturing a liquid crystal display comprising a. The method of claim 15, The insulating protrusion forming step, Depositing a third insulating film, Applying a photosensitive film on the third insulating film, Exposing the photosensitive film through a mask having a different transmittance depending on position; Developing the photosensitive film; Etching the third insulating layer using the photosensitive layer as a mask to form the insulating protrusions Method of manufacturing a liquid crystal display comprising a. The method of claim 15, And the insulating protrusions are made of an organic insulating material. The method of claim 17, And the insulating protrusions are made of a photosensitive material. The method of claim 18, The insulating protrusion forming step, Applying a photoresist film, Exposing the photosensitive film through a mask having a different transmittance depending on position; Developing the photoresist to form the insulating protrusions; Method of manufacturing a liquid crystal display comprising a. The method of claim 15, A method of manufacturing a liquid crystal display device using a mask having a different transmittance depending on a portion in the patterning step of the conductor layer, the ohmic contact layer, and the semiconductor layer.

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