KR100662557B1 - Display device and manufacturing method of the same - Google Patents

Abstract

A display device and a manufacturing method thereof are provided to improve contrast of the display device and to facilitate application of a command voltage on display cells. A display device includes a TFT(Thin Film Transistor)(Tdr), a pixel electrode(161), a light emitting layer(182), a command electrode(190), an auxiliary electrode(241), and a second insulation substrate(210). The TFT is formed on a first insulation substrate. The pixel electrode is electrically connected to the TFT. The light emitting layer is formed on the pixel electrode. The command electrode is formed on the light emitting layer. The auxiliary electrode is formed in a lattice-like shape to expose at least a portion of the pixel electrode. A common voltage is applied on the auxiliary electrode, which is electrically connected to the command electrode. The second insulation substrate is arranged on the auxiliary electrode.

Description

DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME}

1 is an equivalent circuit diagram of a display device according to a first embodiment of the present invention.

2 is a cross-sectional view of a display device according to a first embodiment of the present invention;

3 is a plan view illustrating a black matrix in a display device according to a first embodiment of the present invention;

4A to 4H are cross-sectional views illustrating a method of manufacturing a display device according to a first embodiment of the present invention.

5 and 6 are cross-sectional views of display devices according to the second and third embodiments of the present invention, respectively.

 Explanation of Signs of Major Parts of Drawings

110: first insulating substrate 122: first common voltage applying unit

123: second common voltage applying unit 171: partition wall

180: light emitting layer 190: common electrode

210: second insulating substrate 221: black matrix

231: color filter 241: auxiliary electrode

310: sealant 320: shorting bar

The present invention relates to a display device and a method of manufacturing the same, and more particularly, to a display device and a method of manufacturing the display device having a smooth contrast and improved contrast ratio.

Among flat panel displays, organic light emitting diodes (OLEDs) have recently been in the spotlight due to advantages such as low voltage driving, light weight, wide viewing angle, and high speed response. OLEDs are classified into a passive matrix and an active matrix according to the driving method. The passive type has a simple manufacturing process, but the power consumption increases rapidly as the display area and resolution increase. Therefore, the passive type is mainly applied to small displays. Active type, on the other hand, has a complex manufacturing process but has the advantage of realizing a large screen and high resolution.

In the active OLED, a thin film transistor is connected to each pixel region to control light emission of the organic light emitting layer for each pixel region. Pixel electrodes are located in each pixel area, and each pixel electrode is electrically separated from adjacent pixel electrodes for independent driving. In addition, a partition wall higher than the pixel electrode is formed between the pixel areas, which serves to prevent a short circuit between the pixel electrodes and to separate the pixel areas. The hole injection layer and the organic light emitting layer are sequentially formed on the pixel electrode between the partition walls. The common electrode is formed on the organic light emitting layer.

OLED is divided into bottom emission method and top emission method according to the emission direction of light emitted from the organic light emitting layer.

In the bottom emission method, light generated in the organic light emitting layer is emitted toward the thin film transistor. Although the process is well established, the aperture ratio is reduced by the thin film transistor and the wiring. In particular, the thin film transistor using amorphous silicon has a large size due to low mobility, and the aperture ratio is further reduced because OLEDs usually use two or more thin film transistors.

In the top emission method, light generated in the organic light emitting layer is emitted to the outside via the common electrode. Therefore, there is no decrease in the aperture ratio due to the thin film transistor and it can have a high aperture ratio. Meanwhile, in the top emission method, the common electrode should be manufactured transparently. Although a method of thinly depositing a metal or sputtering of ITO, IZO, etc. is used as a common electrode, it is difficult to manufacture due to the large resistance of the common electrode.

Accordingly, an object of the present invention is to provide a display device with smooth application of common voltage and excellent contrast ratio.

Another object of the present invention is to provide a method of manufacturing a display device in which a common voltage is smoothly applied and an excellent contrast ratio.

An object of the present invention is a thin film transistor formed on a first insulating substrate; A pixel electrode electrically connected to the thin film transistor; A light emitting layer formed on the pixel electrode; A common electrode formed on the light emitting layer; An auxiliary electrode formed in a lattice shape to expose at least a portion of the pixel electrode, and having a common voltage applied thereto and electrically connected to the common electrode; The display device may include a second insulating substrate on the auxiliary electrode.

It is preferable to further include a black matrix positioned between the auxiliary electrode and the second insulating substrate.

The black matrix is preferably made of any one of an organic material containing a black pigment and chromium oxide.

The organic light emitting diode may further include an organic layer positioned on the pixel electrode exposed by the auxiliary electrode.

The light emitting layer includes a plurality of sub layers emitting light of different colors, and the organic layer is preferably transparent.

The emission layer emits white light, and the organic layer is preferably a color filter including a plurality of sublayers having different colors.

The auxiliary electrode is preferably made of at least one selected from the group consisting of aluminum, silver, copper, and gold.

The light transmittance of the common electrode is preferably 50% or more.

 It is preferable to further include a conductive layer positioned between the common electrode and the auxiliary electrode.

The conductive layer is preferably made of at least one selected from the group consisting of polypyrrole, polyaniline, polythiopine.

The conductive layer preferably comprises conductive particles.

The conductive particles are preferably made of silver or nickel.

Light generated in the emission layer is preferably emitted to the outside through the second insulating substrate.

A display area and a non-display area formed around the display area are provided on the first insulating substrate, and a non-conductive sealant for bonding the first insulating substrate and the second insulating substrate is formed on the non-display area. It is preferable.

A display area and a non-display area formed around the display area are provided on the first substrate material, and a shorting bar for applying a common voltage to the auxiliary electrode is formed in the non-display area.

It is preferable to further include a partition wall surrounding the light emitting layer.

A display area and a non-display area formed around the display area are provided on the first substrate material, and the auxiliary electrode and the partition wall overlap each other in the display area.

Another object of the present invention is to prepare a first substrate by forming a thin film transistor, a pixel electrode connected to the thin film transistor, a light emitting layer on the pixel electrode, and a common electrode on the light emitting layer on a first insulating substrate. Making a step; Providing a second substrate by forming a lattice-shaped black matrix on the second insulating substrate, an organic layer positioned between the black matrix, and an auxiliary electrode located on the black matrix; Forming a sealant along a circumference of at least one of the first substrate and the second substrate; A method of manufacturing a display device includes bonding the first substrate and the second substrate so that the auxiliary electrode and the common electrode are electrically connected to each other.

The preparation of the second substrate may further include forming a conductive layer on the auxiliary electrode.

Another object of the present invention is to form a grid-like black matrix on the insulating substrate; Forming an organic layer between the black matrices; It is also achieved by a method of manufacturing a display device including forming an auxiliary electrode on the black matrix.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

In various embodiments, like reference numerals refer to like elements, and like reference numerals refer to like elements in the first embodiment and may be omitted in other embodiments.

In the description, 'on' means that another layer (membrane) is interposed or not interposed between the two layers (membrane), and 'directly on' indicates that the two layers (membrane) are in contact with each other.

1 is an equivalent circuit diagram of a display device according to a first embodiment of the present invention.

Referring to FIG. 1, the display device 1 according to the present exemplary embodiment includes a plurality of signal lines.

The signal line includes a gate line for transmitting a scan signal, a data line for transmitting a data signal, and a driving voltage line for transmitting a driving voltage. The data line and the driving voltage line are adjacent to each other and disposed side by side, and the gate line extends perpendicular to the data line and the driving voltage line.

Each pixel includes an organic light emitting element LD, a switching transistor Tsw, a driving transistor Tdr, and a capacitor C.

The driving transistor Tdr has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the switching transistor Tsw, the input terminal is connected to the driving voltage line, and the output terminal is the organic light emitting element LD. Is connected to.

The organic light emitting element LD has an anode connected to the output terminal of the driving transistor Tdr and a cathode connected to the common voltage Vcom. The organic light emitting element LD displays an image by emitting light at different intensities according to the output current of the driving transistor Tdr. The current of the driving transistor Tdr varies in magnitude depending on the voltage applied between the control terminal and the output terminal.

The switching transistor Tsw also has a control terminal, an input terminal and an output terminal, the control terminal is connected to the gate line, the input terminal is connected to the data line, and the output terminal is the control terminal of the driving transistor Tdr. Is connected to. The switching transistor Tsw transfers the data signal applied to the data line to the driving transistor Tdr according to the scan signal applied to the gate line.

The capacitor C is connected between the control terminal and the input terminal of the driving transistor Tdr. The capacitor C charges and holds the data signal input to the control terminal of the driving transistor Tdr.

The display device according to the first embodiment will be described in detail with reference to FIGS. 2 and 3 as follows. 2 is a cross-sectional view of a display device according to a first embodiment of the present invention, and FIG. 3 is a plan view illustrating a black matrix in the display device according to the first embodiment of the present invention. In FIG. 2, only the driving transistor Tdr is illustrated.

The display device 1 according to the first embodiment includes a first substrate 100, a second substrate 200, and a sealant 310 for bonding both substrates 100 and 200.

The driving substrate Tdr, the pixel electrode 161, the light emitting layer 180, and the common electrode 190 are formed on the first substrate 100, and the black matrix 221 and the color filter are formed on the second substrate 200. 231 and auxiliary electrodes 241 and the like are formed.

First, the first substrate 100 will be described.

The gate electrode 121, the first common voltage applying unit 122, and the second common voltage applying unit 123 are formed on the first insulating substrate 110 made of an insulating material such as glass, quartz, ceramic, or plastic. Formed. The common voltage is externally transmitted to the first common voltage applying unit 122 and the second common voltage applying unit 123, and the common voltage is applied to the common electrode 190 and the auxiliary electrode 241, respectively. The gate electrode 121, the first common voltage applying unit 122, and the second common voltage applying unit 123 are provided in the same layer, and the first common voltage applying unit 122 and the second common voltage applying unit 123 are provided. Is located in the non-display area.

A gate insulating layer 131 made of silicon nitride (SiNx) or the like is formed on the first insulating substrate 110 and the gate electrode 121. The gate insulating layer 131 is partially removed from the first common voltage applying unit 122 and the second common voltage applying unit 123.

 On the gate insulating layer 131 where the gate electrode 121 is positioned, a semiconductor layer 132 made of amorphous silicon and an ohmic contact layer 133 made of n + hydrogenated amorphous silicon heavily doped with n-type impurities are sequentially formed. Here, the ohmic contact layer 133 is separated from both sides with respect to the gate electrode 121.

The source electrode 141 and the drain electrode 142 are formed on the ohmic contact layer 133 and the gate insulating layer 131. The source electrode 141 and the drain electrode 142 are separated around the gate electrode 121.

The passivation layer 151 is formed on the source electrode 141, the drain electrode 142, and the semiconductor layer 132 which is not covered. The passivation layer 151 may be made of silicon nitride (SiNx). The passivation layer 151 is partially removed on the drain electrode 142, the first common voltage applying unit 122, and the second common voltage applying unit 123.

The organic film 152 is formed on the passivation film 151. The organic layer 152 may be any one of a benzocyclobutene (BCB) series, an olefin series, an acrylic resin series, a polyimide series, a teflon series, a cytotop, and a perfluorocyclobutane (FCB). . The organic layer 152 is partially removed on the drain electrode 142, the first common voltage applying unit 122, and the second common voltage applying unit 123.

The pixel electrode 161 is formed on the organic layer 152. The pixel electrode 161 is also called an anode and supplies holes to the emission layer 180. The pixel electrode 161 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and is connected to the drain electrode 142 through the contact hole 153.

The first contact member 162 and the second contact member 163 formed of the same layer as the pixel electrode 161 are formed on the first common voltage applying unit 122 and the second common voltage applying unit 123, respectively. have. The first contact member 162 is connected to the first common voltage applying unit 122 through the contact hole 154, and the second contact member 163 is connected to the second common voltage applying unit through the contact hole 155. 123 is connected.

The partition wall 171 surrounding the pixel electrode 161 is formed on the pixel electrode 161 and the organic layer 152. The partition wall 171 defines the pixel area by dividing the pixel electrodes 161. The partition wall 171 also serves to prevent the source electrode 141 and the drain electrode 142 of the thin film transistor Tdr from being short-circuited with the common electrode 190. The partition wall 171 may be formed of a photoresist having heat resistance and solvent resistance, such as an acrylic resin and a polyimide resin, or an inorganic material such as SiO 2 or TiO 2, and may have a two-layer structure of an organic layer and an inorganic layer. The partition 171 is provided with a contact hole 172 exposing the first contact member 162.

The emission layer 180 is formed on the pixel electrode 161 not covered by the partition wall 171. The light emitting layer 180 includes a hole injecting layer 181 and an organic light emitting layer 182.

The hole injection layer 181 is made of a hole injection material such as poly (3,4-ethylenedioxythiophene) (PEDOT) and polystyrenesulfonic acid (PSS). The hole injection material is mixed with water to inkjet in an aqueous suspension state. Can be formed in a manner.

The organic emission layer 182 emits white light and may also be formed by an inkjet method.

The holes transferred from the pixel electrode 161 and the electrons transferred from the common electrode 190 are combined in the organic emission layer 182 to become excitons, and then generate light in the process of deactivating the excitons.

The common electrode 190 is positioned on the barrier rib 171 and the organic emission layer 182. The common electrode 190 is also called a cathode and supplies electrons to the organic emission layer 182. The common electrode 190 may be made of an alloy of magnesium and silver or an alloy of calcium and silver, and may have a thickness of 50 to 200 nm. If the thickness of the common electrode 190 is 50 nm or less, the resistance is excessively large, so that the common voltage is not smoothly applied. If the thickness of the common electrode 190 is 200 nm or more, the common electrode 190 may become opaque. The light transmittance of the common electrode 190 is preferably 50% or more.

The common electrode 190 is connected to the first contact member 162 through the contact hole 172. The first contact member 162 is connected to the first common voltage applying unit 122 so that the common electrode 190 receives a common voltage. However, since the first common voltage applying unit 122 is located outside the display area, a voltage drop occurs in the common electrode 190 far from the first common voltage applying unit 122. In the case of the top emission method in which the light of the organic light emitting layer 182 passes through the common electrode 190, the thickness of the common electrode 190 is limited in order to prevent a decrease in luminance, thereby increasing the resistance of the common electrode 190. The voltage drop problem becomes more serious.

Although not shown, the common electrode 190 may be formed of a double layer, and the lower layer may be an alloy layer of metal, and the upper layer may be formed of an ITO layer or an IZO layer. However, the ITO layer or the IZO layer is formed through low temperature deposition to protect the light emitting layer 180 from heat or plasma. The ITO layer or the IZO layer formed by the low temperature deposition method has a poor film quality and poor resistivity, and thus the above-described voltage drop problem is not solved.

This problem is solved by the auxiliary electrode 241 of the second substrate 200. Looking at the second substrate 200 as follows.

The black matrix 221 is formed on the second insulating substrate 210. The black matrix 221 is formed in a lattice shape as shown in FIG. 3, and the opening 232 in which the black matrix 221 is not formed is provided to correspond to the light emitting layer 180 of the first substrate 100. The black matrix 221 is positioned on the display area and is located on the non-display area along the edges of the relatively narrow inner black matrix 221a and the second insulating substrate 210 and has a relatively wide outer black matrix 221b. ). The black matrix 221 may be formed of a photosensitive organic material containing chromium pigment or chromium oxide. As the black pigment, carbon black or titanium oxide may be used.

The color filter 231 is formed in the opening 222 of the black matrix 221. The color filter 231 includes three sublayers 231a, 231b, and 231c having different colors and formed in a predetermined pattern. White light generated in the light emitting layer 180 passes through the color filter 231 and is given color.

The auxiliary electrode 241 is formed on the color filter 231. The auxiliary electrode 241 is positioned above the black matrix 221 and is also formed in a lattice shape. The auxiliary electrode 241 may be made of a metal having low electrical resistance, for example, aluminum (Al), silver (Ag), copper (Cu), gold (Au), or the like.

The auxiliary electrode 241 is connected to the second contact member 163 covering the second common voltage applying unit 123 and the shorting bar 320 to receive a common voltage. The auxiliary electrode 241 is in direct contact with the common electrode 190 and electrically connected thereto. The auxiliary electrode 241 transmits a common voltage to the common electrode 190, whereby the common electrode 190 can smoothly apply the common voltage to the light emitting layer 180.

The first substrate 100 and the second substrate 200 are attached to each other through the sealant 310 formed in the non-display area. The sealant 310 may be made of acrylic resin and / or epoxy resin as non-conductive.

Although not shown, the second substrate 200 may further include a moisture absorbent to protect the light emitting layer 180 from moisture. The moisture absorbent may be provided in the non-display area.

Hereinafter, a method of manufacturing a display device according to a first embodiment of the present invention will be described with reference to FIGS. 4A to 4H. 4A through 4D illustrate a method of manufacturing the first substrate 100, and FIGS. 4F through 4H illustrate a method of manufacturing the second substrate 200.

A manufacturing method of the first substrate 100 will be described with reference to FIGS. 4A to 4D.

First, as shown in FIG. 4A, a thin film transistor Tdr is formed on the first insulating substrate 110. The thin film transistor Tdr may include a channel portion made of amorphous silicon and may be manufactured by a known method. The first common voltage applying unit 122 and the second common voltage applying unit 123 are formed together with the thin film transistor Tdr. After forming the thin film transistor Tdr, the passivation layer 151 is formed on the thin film transistor Tdr. When the protective film 151 is silicon nitride, chemical vapor deposition may be used. The first common voltage applying unit 122 and the second common voltage applying unit 123 are exposed through the contact holes 154 and 155, respectively.

Thereafter, as shown in FIG. 4B, the organic layer 152, the pixel electrode 161, the first contact member 162, and the second contact member 163 are formed. The organic layer 152 is formed through slit coating and spin coating, and contact holes 153 and 154 are formed through exposure and development. The pixel electrode 161, the first contact member 162, and the second contact member 163 are formed by photolithography after forming a transparent conductive layer such as ITO and IZO by a sputtering method. On the other hand, since the pixel electrode 161 does not need to be transparent in the top emission method, the pixel electrode 161 may be made of a metal that reflects light.

Thereafter, the partition wall 171 is formed as shown in FIG. 4C. The partition wall 171 is formed by exposing and developing the photosensitive material layer.

Thereafter, the light emitting layer 180 is formed as shown in FIG. 4D.

The hole injection layer 181 is formed by dropping a hole injection solution, which is a polymer solution containing a hole injection material, on the pixel electrode 161 by using an inkjet method and then drying it. The hole injection solution may include a mixture of polythiophene derivatives such as poly (3,4-ethylenedioxythiophene) (PEDOT) and polystyrene sulfonic acid (PSS), and a polar solvent in which these mixtures are dissolved. As a polar solvent, for example, isopropyl alcohol (IPA), n-butanol, γ-butylollactone, N-methylpyridone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI) And glycol ethers such as derivatives thereof, carbitol acetate and butyl carbitol acetate, and the like.

The organic light emitting layer 182 is formed by dropping a light emitting solution, which is a polymer solution containing a white light emitting material, on the crystallization layer 181 using an inkjet method and then drying.

Thereafter, as shown in FIG. 4E, when the common electrode 190 is formed on the partition 171 and the organic emission layer 182, the first substrate 100 is completed.

The manufacturing method of the second substrate 200 will be described with reference to FIGS. 4F to 4H as follows.

First, the black matrix 221 is formed on the second insulating substrate 210 as shown in FIG. 4F. When the black matrix 221 is made of chromium oxide, it may be formed through sputtering and photolithography. When the black matrix 221 is formed of an organic material including a black pigment, it may be formed through coating, exposure, and development. The formed black matrix 221 includes an inner black matrix 221a and a surgical black matrix 221b, and an opening 222 is formed between the adjacent inner black matrices 221a.

Next, as shown in FIG. 4G, the color filter 231 is formed in the opening 222 of the black matrix 221. The color filter 231 may be formed through coating, exposure, and development on each of the sublayers 231a, 231b, and 231c.

Next, as shown in FIG. 4H, when the auxiliary electrode 241 is formed on the black matrix 221, the second substrate 200 is provided. The auxiliary electrode 241 may be formed through deposition of the metal layer through sputtering and photolithography of the metal layer.

When the first substrate 100 and the second substrate 200 are provided in this way, the sealant 310 is formed along the circumference of one of the first substrate 100 and the second substrate 200, and then both substrates 100 are formed. , 200). When the sealant 310 is cured, the display device 1 according to the first embodiment is completed. The shorting bar 320 may be formed on either side of both substrates 100 and 200 before the bonding of both substrates 100 and 200. Through the junction, the auxiliary electrode 241 receives a common voltage from the second common voltage applying unit 123 and is in direct contact with the common electrode 190.

According to the first exemplary embodiment, the common voltage can be smoothly supplied to the common electrode 190 through the auxiliary electrode 241. In addition, the use of the black matrix 221 has the effect of increasing the contrast ratio.

5 and 6 are cross-sectional views of display devices according to the second and third embodiments of the present invention, respectively.

According to the second embodiment shown in FIG. 5, the organic light emitting layer 182 is composed of three sublayers 182a, 182b, and 182c emitting different colors. The organic light emitting layer 182 may include a polyfluorene derivative, a (poly) paraphenylene vinylene derivative, a polyphenylene derivative, a polyvinylcarbazole, a polythiophene derivative, or a perylene-based pigment, a laumine-based pigment, Rubene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, nile red, coumarin 6, quinacridone and the like can be used by doping.

The transparent organic layer 251 is formed on the organic light emitting layer 182. The organic layer 251 has no color and is selected from BCB (benzocyclobutene) series, olefin series, acrylic resin series, polyimide series, teflon series, cytop, and perfluorocyclobutane (FCB). It can be made of either.

According to the third embodiment illustrated in FIG. 6, a conductive layer 330 is formed between the common electrode 190 and the auxiliary electrode 241. The conductive layer 330 strengthens the electrical connection between the common electrode 190 and the auxiliary electrode 241 and is made of a conductive polymer. As the conductive polymer, polypyrrole, polyaniline, polythiopine, or the like can be used. The conductive layer 330 includes conductive particles 331. The conductive particles 331 are made of nickel or silver and have a very small diameter for transparency.

The conductive layer 330 may be formed on either one of the first substrate 100 and the second substrate 200 in the manufacturing process.

In the above embodiment, a case of using a polymer material as the light emitting layer 180 is illustrated, but the present invention may be applied to a case of using a low molecular material as the light emitting layer 180. When using a low molecular weight material, the light emitting layer 180 may be formed by an evaporation method.

Although some embodiments of the invention have been shown and described, those skilled in the art will recognize that modifications can be made to the embodiments without departing from the spirit or principles of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

As described above, the present invention provides a display device with smooth application of a common voltage and excellent contrast ratio.

In addition, a method of manufacturing a display device having a smooth contrast and excellent contrast ratio is provided.

Claims (20)

A thin film transistor formed on the first insulating substrate; A pixel electrode electrically connected to the thin film transistor; A light emitting layer formed on the pixel electrode; A common electrode formed on the light emitting layer; An auxiliary electrode formed in a lattice shape to expose at least a portion of the pixel electrode, and having a common voltage applied thereto and electrically connected to the common electrode; And a second insulating substrate on the auxiliary electrode. The method of claim 1, And a black matrix disposed between the auxiliary electrode and the second insulating substrate. The method of claim 2, And the black matrix is made of any one of an organic material including black pigment and chromium oxide. The method of claim 1, And an organic layer disposed on the pixel electrode exposed by the auxiliary electrode. The method of claim 4, wherein The light emitting layer includes a plurality of sub layers emitting light of different colors, And the organic layer is transparent. The method of claim 4, wherein The light emitting layer emits white light, And the organic layer is a color filter including a plurality of sub layers having different colors. The method of claim 1, The auxiliary electrode is at least one selected from the group consisting of aluminum, silver, copper, and gold. The method of claim 1, And a light transmittance of the common electrode is 50% or more. The method of claim 1, And a conductive layer disposed between the common electrode and the auxiliary electrode. The method of claim 9, And the conductive layer is formed of at least one selected from the group consisting of polypyrrole, polyaniline, and polythiopine. The method of claim 9, The conductive layer includes a conductive particle. The method of claim 11, And the conductive particles are made of silver or nickel. The method of claim 1, The light generated by the light emitting layer is emitted to the outside through the second insulating substrate. The method of claim 13, A display area and a non-display area formed around the display area are provided on the first insulating substrate. And a non-conductive sealant for bonding the first insulating substrate and the second insulating substrate to the non-display area. The method of claim 1, A display area and a non-display area formed around the display area are provided on the first substrate material. And a shorting bar configured to apply a common voltage to the auxiliary electrode in the non-display area. The method of claim 1, And a partition wall surrounding the light emitting layer. The method of claim 16, A display area and a non-display area formed around the display area are provided on the first substrate material. And the auxiliary electrode and the partition wall overlap each other in the display area. Providing a first substrate by forming a thin film transistor, a pixel electrode connected to the thin film transistor, a light emitting layer on the pixel electrode, and a common electrode on the light emitting layer on a first insulating substrate; Providing a second substrate by forming a lattice-shaped black matrix on the second insulating substrate, an organic layer positioned between the black matrix, and an auxiliary electrode located on the black matrix; Forming a sealant along a circumference of at least one of the first substrate and the second substrate; And bonding the first substrate and the second substrate such that the auxiliary electrode and the common electrode are electrically connected to each other. The method of claim 18, Preparation of the second substrate, And forming a conductive layer on the auxiliary electrode. Forming a lattice-shaped black matrix on the insulating substrate; Forming an organic layer between the black matrices; And forming an auxiliary electrode on the black matrix.

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